JPH0439233B2 - - Google Patents
Info
- Publication number
- JPH0439233B2 JPH0439233B2 JP57199621A JP19962182A JPH0439233B2 JP H0439233 B2 JPH0439233 B2 JP H0439233B2 JP 57199621 A JP57199621 A JP 57199621A JP 19962182 A JP19962182 A JP 19962182A JP H0439233 B2 JPH0439233 B2 JP H0439233B2
- Authority
- JP
- Japan
- Prior art keywords
- long side
- thin film
- piezoelectric thin
- cantilever beam
- silicon dioxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 40
- 235000012239 silicon dioxide Nutrition 0.000 description 20
- 239000000377 silicon dioxide Substances 0.000 description 20
- 238000004544 sputter deposition Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- -1 molybdenum Metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
- Pressure Sensors (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
Description
【発明の詳細な説明】
(イ) 発明の分野
この発明は、たとえば薄膜形超音波センサ、加
速度計、振動センサ、圧電リレー、光モジユレー
タ等の電気一機械振動子に用いられる薄膜形の片
持梁（ユニモルフ片持梁）の製造方法に関する。[Detailed Description of the Invention] (a) Field of the Invention The present invention relates to a thin-film cantilever used in electromechanical vibrators such as thin-film ultrasonic sensors, accelerometers, vibration sensors, piezoelectric relays, and optical modulators. This invention relates to a method for manufacturing a beam (unimorph cantilever beam).
(ロ) 従来技術とその問題点
従来、薄膜形ユニモルフ片持梁を製造する方法
の１つに、二酸化シリコン（SiO2）の片持梁を
形成した後、SiO2上にスパツタリングにより圧
電性薄膜を形成する方法がある。しかしこの種の
製造方法によると、圧電性薄膜を形成する過程に
おいて、スパツタリングによる歪により、片持梁
が曲がるという不具合があつた。このような不具
合はスパツタリング時の微妙の条件変化により生
じ、また種々の要因に帰因しており、これを絶無
とすること、あるいは一義的にコントロールする
ことは非常に困難であつた。そこでこの不具合を
解消するために片持梁状態でのスパツタリングに
よる圧電性薄膜の形成を行なわず、二酸化シリコ
ンの両持梁にスパツタリングで圧電薄膜を形成
し、しかる後に片持梁を得る方法が考えられる。(b) Conventional technology and its problems Conventionally, one of the methods for manufacturing a thin film type unimorph cantilever is to form a silicon dioxide (SiO 2 ) cantilever and then sputter a piezoelectric thin film onto the SiO 2 . There is a way to form. However, this type of manufacturing method has a problem in that the cantilever beams are bent due to distortion caused by sputtering during the process of forming the piezoelectric thin film. Such defects occur due to subtle changes in conditions during sputtering and are attributable to various factors, and it has been extremely difficult to eliminate or uniquely control them. Therefore, in order to solve this problem, we thought of a method in which a piezoelectric thin film is not formed by sputtering on a cantilever beam, but a piezoelectric thin film is formed by sputtering on a silicon dioxide beam, and then a cantilever is obtained. It will be done.
ところで従来の、たとえば二酸化シリコンの片
持梁を得る方法は、第１図に示すように面方位
（100）のシリコン（Si）の単結晶基板１上に、略
コ字状の開口部２とこの開口部２とこの開口部２
のコ字状の凹部に対する凸状の長辺部３を有する
二酸化シリコン膜４を形成し、この開口部２より
異方性エツチングを施し、長手方向が＜110＞方
向となる二酸化シリコン片持梁５を得るようにし
ている。この場合、（111）面方向のエツチングが
遅いため、全面６が（111）面で形成された穴７
上に片持梁５が形成されることになり、凸形の角
３ａを有する長辺部３以外の二酸化シリコン膜４
の下部へのシリコンのオーバエツチングは生じな
い。すなわち凸形の角３ａを有する二酸化シリコ
ン膜４の形状によつて片持梁５が形成される。 By the way, in the conventional method of obtaining a cantilever beam of silicon dioxide, for example, as shown in FIG. This opening 2 and this opening 2
A silicon dioxide film 4 having a convex long side 3 relative to a U-shaped recess is formed, and anisotropic etching is performed from this opening 2 to form a silicon dioxide cantilever whose longitudinal direction is in the <110> direction. I'm trying to get a 5. In this case, since etching in the direction of the (111) plane is slow, the hole 7 whose entire surface 6 is formed by the (111) plane
A cantilever beam 5 is formed on the silicon dioxide film 4 other than the long side portion 3 having a convex corner 3a.
No overetching of silicon to the bottom of the surface occurs. That is, a cantilever beam 5 is formed by the shape of the silicon dioxide film 4 having convex corners 3a.
ここで、上述した二酸化シリコン膜の両持梁を
得るために、第１図において長辺部３を点線で示
すように延長橋絡した場合を考えると、片持梁作
成時のような長辺部３の凸形の角部３ａがなくな
るので、エツチングを行なつても長辺部３すなわ
ち両持梁となるべき二酸化シリコンの下方へのエ
ツチングが進行せず、結局両持梁を得ることがで
きない。両持梁が得られないとなると、両持梁状
態でスパツタリングによる圧電性薄膜を形成し、
しかる後に片持梁を得るという方法も実現不可能
となる。 Here, in order to obtain the above-mentioned double-supported beam of silicon dioxide film, consider the case where the long side 3 is extended and bridged as shown by the dotted line in Fig. 1. Since the convex corner part 3a of the part 3 is eliminated, even if etching is performed, the long side part 3, that is, the silicon dioxide which should become the double-supported beam, will not be etched downward, and it will not be possible to obtain the double-supported beam after all. Can not. If a beam supported on both sides cannot be obtained, a piezoelectric thin film is formed by sputtering with the beam supported on both sides.
After that, the method of obtaining a cantilever beam also becomes unfeasible.
(ハ) 発明の目的
以上に鑑み、この発明の目的は、先ず異方性エ
ツチングによる両持梁の作成を実現し、この両持
梁状態下において、圧電性薄膜を形成ししかる後
に片持梁を得る、スパツタリング等による歪の生
じない片持梁の製造方法を提供するにある。(c) Purpose of the Invention In view of the above, the purpose of the present invention is to first realize the creation of a double-supported beam by anisotropic etching, form a piezoelectric thin film under the state of the double-supported beam, and then form a cantilevered beam. It is an object of the present invention to provide a method for manufacturing a cantilever beam that does not cause distortion due to sputtering or the like.
(ニ) 発明の構成と効果
上記目的を達成するために、この発明の片持梁
の製造方法は面方位（100）のシリコン基板上に、
軸方位＜110＞に片持梁を形成するための長辺部
と、この長辺部両側に設けられる第１および第２
の開口部と、前記長辺部の一端が分れて形成され
る２個の支辺部と、この支辺部に囲まれる前記長
辺部の幅よりも広い幅を持つ第３の開口部とを有
する被膜（たとえば二酸化シリコン）を形成し、
さらにこの被膜の前記各辺部上に圧電性薄膜を形
成し、この圧電性薄膜の形成前もしくは形成後に
前記各開口部を通して異方性エツチングを行な
い、前記圧電性薄膜の形成および前記異方性エツ
チングの終了後に前記被膜および圧電性薄膜を含
む前記支辺部を切断して片持梁を得るようにして
いる。(d) Structure and Effects of the Invention In order to achieve the above object, the method for manufacturing a cantilever beam of the present invention provides
A long side part for forming a cantilever beam in the axial direction <110>, and a first and second second part provided on both sides of this long side part.
an opening, two supporting sides formed by separating one end of the long side, and a third opening surrounded by these supporting sides and having a width wider than the width of the long side. forming a film (e.g. silicon dioxide) having
Furthermore, a piezoelectric thin film is formed on each side of the film, and anisotropic etching is performed through each of the openings before or after the formation of the piezoelectric thin film, and the piezoelectric thin film is formed and the anisotropic etching is performed. After the etching is completed, the support portion including the coating and the piezoelectric thin film is cut to obtain a cantilever beam.
この発明の片持梁の製造方法によれば、長辺部
の先端に設けられる第３の開口部の幅を長辺部の
幅より大にしているので、長辺部先端に凸形の角
部が形成され、長辺部および支辺部の下方にもエ
ツチングが進行して両持梁を得ることができる。
そして第３の開口部の幅方向を含む面でシリコン
基板および支辺を切断して片持梁とする以前に、
長辺部および支辺部に圧電性薄膜を形成するもの
であるから圧電性薄膜形成時のスパツタリング等
によつて歪が生じるおそれが解消される。したが
つて片持梁の先端の曲りを少なくすることがで
き、センサの共振特性、指向性を向上させること
ができ、また圧電リレー、光モジユレータにこの
発明の実施により得られた片持梁を適用した場
合、先端変位量のコントロールを容易にすること
ができる。その上製造時の歩留りを大幅に向上で
きる。 According to the method for manufacturing a cantilever beam of the present invention, since the width of the third opening provided at the tip of the long side is made larger than the width of the long side, a convex corner is formed at the tip of the long side. Etching also progresses below the long side and supporting side, resulting in a double-supported beam.
Then, before cutting the silicon substrate and supporting side in a plane including the width direction of the third opening to form a cantilever beam,
Since the piezoelectric thin film is formed on the long side portions and the supporting side portions, the possibility of distortion occurring due to sputtering or the like during formation of the piezoelectric thin film is eliminated. Therefore, the bending of the tip of the cantilever beam can be reduced, and the resonance characteristics and directivity of the sensor can be improved, and the cantilever beam obtained by implementing the present invention can be used in piezoelectric relays and optical modulators. When applied, the amount of tip displacement can be easily controlled. Moreover, the yield during manufacturing can be significantly improved.
(ホ) 実施例の説明
以下、図面に示す実施例により、この発明を詳
細に説明する。(e) Description of Embodiments The present invention will be described in detail below with reference to embodiments shown in the drawings.
第２図はこの発明が実施される素子の斜視図で
ある。この図に示す素子を参照して片持梁の製造
方法を以下に説明する。同図において１１は面方
位（100）のシリコンの単結晶基板であり、この
シリコン基板１１上に二酸化シリコン１２が形成
される。そしてこの二酸化シリコン１２に対し、
通常のフオトリゾおよびエツチング処理によりパ
ターニングが行なわれる。パターニングの結果、
二酸化シリコン１２は中央部に長手方向が＜110
＞方向となる長辺部１３、この長辺部の両側に配
される開口部１４，１５、前記長辺部の一端に分
れて設けられる支辺部１６，１７およびこの支辺
部１６，１７で囲まれ、長辺部１３の幅方向の幅
W2が長辺部１３の幅W1よりも大きい開口部１８
を特徴的に持つことになる。 FIG. 2 is a perspective view of an element in which the invention is implemented. A method for manufacturing a cantilever beam will be described below with reference to the element shown in this figure. In the figure, reference numeral 11 denotes a silicon single crystal substrate with a (100) plane orientation, and silicon dioxide 12 is formed on this silicon substrate 11. And for this silicon dioxide 12,
Patterning is performed by conventional photolithography and etching processes. As a result of patterning,
Silicon dioxide 12 has a central part with a longitudinal direction of <110
> direction, a long side 13, openings 14 and 15 arranged on both sides of this long side, supporting sides 16 and 17 provided separately at one end of the long side, and this supporting side 16, 17, and the width in the width direction of the long side 13
Opening 18 whose W2 is larger than the width W1 of the long side 13
It will have a characteristic.
次に、エチレンジアミン、ピロカテコール水溶
液などの異方性エツチング液で、開口部１４，１
５，１８よりシリコン基板１１に対しエツチング
を行なう。エツチングは開口部１４，１５，１８
からそれぞれ進行するが、進行するにつれて支辺
部１６，１７の凸形の角１９，２０より支辺部１
６，１７の下方部にもエツチングが進行し、二酸
化シリコン１２の下方部には第３図に示す空間２
１が生じる。そして開口部１４，１５のエツチン
グと開口部１８のエツチングが下部で連絡されて
凸形の角２２，２３を形成する。この角２２，２
３からさらにエツチングが進行しやがて第４図に
示すように二酸化シリコン１２の下方部は１個の
空間２４となり、両持梁２５が形成される。 Next, the openings 14 and 1 are etched with an anisotropic etching solution such as an aqueous solution of ethylenediamine and pyrocatechol.
Etching is performed on the silicon substrate 11 from steps 5 and 18. Etching is done on openings 14, 15, 18.
However, as it progresses, the convex corners 19 and 20 of the support sides 16 and 17 move toward the support side 1.
Etching also progresses below the silicon dioxide 12, and the space 2 shown in FIG. 3 is formed below the silicon dioxide 12.
1 occurs. The etchings of the openings 14 and 15 and the etchings of the opening 18 are then connected at the bottom to form convex corners 22 and 23. This corner 22,2
As the etching progresses further from 3, the lower part of the silicon dioxide 12 becomes a single space 24 as shown in FIG. 4, and a support beam 25 is formed.
この後、長辺部１３、支辺部１６，１７上に電
極、圧電性薄膜を形成し、最後に第２図に示すＡ
―A′でレーザビーム等により切断を行ない、片
持梁を得る。 After this, electrodes and piezoelectric thin films are formed on the long side 13 and supporting sides 16 and 17, and finally the A shown in FIG.
- At A', cut with a laser beam, etc. to obtain a cantilever beam.
第５図は以上のようにして製造された素子の斜
視図である。同図において２６は二酸化シリコン
１２上に形成される下部電極、２７は下部電極２
６と上部電極２８に挾設される圧電性薄膜であ
る。これら二酸化シリコン１２、下部電極２６、
圧電性薄膜２７および上部電極２８で形成される
長辺部１３、支辺部１６，１７で片持梁２９が構
成されている。上記下部電極２６と上部電極２８
に電圧を印加することにより片持梁２９を先端部
が振動する。 FIG. 5 is a perspective view of the device manufactured as described above. In the figure, 26 is a lower electrode formed on the silicon dioxide 12, and 27 is a lower electrode 2.
6 and the upper electrode 28. These silicon dioxide 12, lower electrode 26,
A cantilever beam 29 is constituted by the long side portion 13 formed by the piezoelectric thin film 27 and the upper electrode 28, and the support portions 16 and 17. The lower electrode 26 and the upper electrode 28
The tip of the cantilever beam 29 vibrates by applying a voltage to the cantilever beam 29 .
なお上記実施例において圧電性薄膜の形成を、
異方性エツチング後になす場合について説明した
が、圧電性薄膜の形成を異方性エツチングをなす
前に行なつてもよい。 In addition, in the above examples, the formation of the piezoelectric thin film was
Although the case where the piezoelectric thin film is formed after the anisotropic etching has been described, the piezoelectric thin film may be formed before the anisotropic etching.
また上記実施例では、シリコン基板上に形成す
る被膜として二酸化シリコンを用いたが、これに
代えて高濃度（1019個／cm3）ボロンドーブシリコ
ンを用いてもよいし、シリコン基板上にモリブデ
ン（Mo）、クローム（Cr）、タンタル（Ta）な
どの金属を蒸着するようにしてもよい。金属蒸着
被膜を用いる場合には第５図における下部電極２
６は不用となる。 Further, in the above embodiment, silicon dioxide was used as the coating formed on the silicon substrate, but instead of this, high concentration (10 19 pieces/cm 3 ) boron-doped silicon may be used, or molybdenum Metals such as (Mo), chromium (Cr), and tantalum (Ta) may also be vapor-deposited. When using a metal vapor deposition film, the lower electrode 2 in FIG.
6 becomes unnecessary.
第１図は従来の製造方法による片持梁の斜視
図、第２図は、この発明が実施される素子の斜視
図、第３図、第４図は同素子のエツチング進行過
程を示す斜視図、第５図はこの発明の製造方法に
よつて製作された素子の斜視図である。
１１：シリコン基板、１２：二酸化シリコン、
１３：長辺部、１４，１５，１８：開口部、１
６，１７：支辺部、２７：圧電性薄膜、２９：片
持梁。
Fig. 1 is a perspective view of a cantilever beam produced by a conventional manufacturing method, Fig. 2 is a perspective view of an element in which the present invention is implemented, and Figs. 3 and 4 are perspective views showing the progress of etching of the element. , FIG. 5 is a perspective view of a device manufactured by the manufacturing method of the present invention. 11: silicon substrate, 12: silicon dioxide,
13: Long side, 14, 15, 18: Opening, 1
6, 17: Support part, 27: Piezoelectric thin film, 29: Cantilever beam.
Claims (1)
＜110＞に長手方向が配される被膜と圧電性薄膜
からなる片持梁を形成する片持梁の製造方法であ
つて、 前記シリコン基板上に、前記片持梁を形成する
ための長辺部と、この長辺部両側に設けられる第
１および第２の開口部と、前記長辺部の一端が分
れて形成される２個の支辺部と、この支辺部に囲
まれ前記長辺部の幅よりも広い幅を持つ第３の開
口部とを有する被膜を形成し、さらにこの被膜の
前記各辺部上に圧電性薄膜を形成し、この圧電性
薄膜の形成前もしくは形成後に前記各開口部を通
して異方性エツチングを行い、前記圧電性薄膜の
形成および前記異方性エツチングの終了後に、前
記２個の支辺部が自由端となるように前記第１お
よび第３の開口部並びに前記第３および第２の開
口部に至つて切断する片持梁の製造方法。[Claims] 1. A method for manufacturing a cantilever beam comprising a film and a piezoelectric thin film whose longitudinal direction is arranged in an axial direction <110> on a silicon substrate with a plane orientation (100). On the silicon substrate, a long side for forming the cantilever, first and second openings provided on both sides of the long side, and one end of the long side separated. a third opening surrounded by the supporting sides and having a width wider than the width of the long side; A piezoelectric thin film is formed on the side portion, and anisotropic etching is performed through each of the openings before or after the formation of the piezoelectric thin film, and after the formation of the piezoelectric thin film and the anisotropic etching are completed, A method for manufacturing a cantilever beam, in which the first and third openings and the third and second openings are cut so that the two supporting sides become free ends.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57199621A JPS5988618A (en) | 1982-11-12 | 1982-11-12 | Manufacture of overhung beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57199621A JPS5988618A (en) | 1982-11-12 | 1982-11-12 | Manufacture of overhung beam |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5988618A JPS5988618A (en) | 1984-05-22 |
| JPH0439233B2 true JPH0439233B2 (en) | 1992-06-26 |
Family
ID=16410891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57199621A Granted JPS5988618A (en) | 1982-11-12 | 1982-11-12 | Manufacture of overhung beam |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5988618A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6408496B1 (en) * | 1997-07-09 | 2002-06-25 | Ronald S. Maynard | Method of manufacturing a vibrational transducer |
| US9225311B2 (en) | 2012-02-21 | 2015-12-29 | International Business Machines Corporation | Method of manufacturing switchable filters |
-
1982
- 1982-11-12 JP JP57199621A patent/JPS5988618A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5988618A (en) | 1984-05-22 |
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