JPH0442351B2 - - Google Patents
Info
- Publication number
- JPH0442351B2 JPH0442351B2 JP59001108A JP110884A JPH0442351B2 JP H0442351 B2 JPH0442351 B2 JP H0442351B2 JP 59001108 A JP59001108 A JP 59001108A JP 110884 A JP110884 A JP 110884A JP H0442351 B2 JPH0442351 B2 JP H0442351B2
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric
- curie temperature
- strain constant
- constant
- piezoelectric strain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
本発明は、（Pb−Ba）（Zr−Ti）O3系磁器を主
成分とする圧電磁器組成物の改良に関し、更に詳
しくは、機械的変位量が大きく、かつキユリー温
度が高いため、特に限定されるものではないが、
例えばVTR用ダイナミツク・アクチユエータな
ど微動変位体の駆動用圧電バイモルフ等に最適な
圧電磁器組成物に関するものである。
圧電バイモルフ・アクチユエータは、圧電歪を
利用した微動変位体駆動用の素子であつて、サブ
ミクロンから数百ミクロンまでの微調整が可能で
あり、それを用いることによつて、例えばVTR
の磁気ヘツドをトラツクと垂直方向に変位させ
て、スロー、静止、高速サーチ時に忠実なトラツ
キングを行わせることができる。このような応用
分野において、圧電材料に求められる性質は、圧
電歪定数（ｄ定数：一定印加電圧に対するひずみ
量）が大きく、キユリー温度並びに抗電界が高い
ことである。
実際に使用する場合には、一応キユリー温度の
約半分位までの温度が使用目安となるので、圧電
材料としては、キユリー温度が150℃程度以上で
あることが必要だし、低電圧動作を可能にするた
めにも圧電歪定数｜d31｜は少なくても250×
10-12m/V程度以上でなければならない。
ところが、従来から種々の組成の高歪圧電材料
が知られているが、これらのうち圧電歪定数｜
d31｜が300×10-12m/V程度の大きいものはキユ
リー温度Tcが110℃程度と低く、逆にキユリー温
度が150℃以上のものは圧電歪定数｜d31｜が250
×10-12m/V未満と低く、実用上満足のいくもの
ではなかつた。
本発明の目的は、上記のような従来技術の欠点
を解消し、圧電歪定数が大きく、かつキユリー温
度が高く、それ故、バイモルフ・アクチユエータ
等の変位素子用材料として最適な圧電磁器組成物
を提供することにある。
以下、本発明について詳しく説明する。本発明
にかかる圧電磁器組成物は、（１−ｘ）Pb(1-A)
BaA［ZrBTi(1-B)］O3＋xPb(1-A)BaA［Bi2/3W1/3］O3
なる組成式で表わされ、0.005≦ｘ≦0.015、0.17
≦Ａ≦0.25、0.53≦Ｂ≦0.55なる組成のものであ
る。つまり、本発明は、（Pb−Ba）（Zr−Ti）O3
系磁器を主成分とし、それに（Pb−Ba）（Bi−
Ｗ）O3系磁器を少量添加した構成である。ここ
で、（Pb−Ba）（Bi−Ｗ）O3系磁器の添加割合ｘ
を0.005≦ｘ≦0.015としたのは、ｘが小さすぎる
と仮焼きを含めて焼結性が悪く、通常1200〜1300
℃程度で焼結しうるものが1350〜1400℃といつた
ように高くなつてしまうし、逆にｘが大きすぎる
と、他の結晶系が部分的に生成され、圧電活性が
小さくなる、具体的には電気機械結合係数kpが小
さくなるためである。つまりBiは融点が低く、
それを入れることによつて仮焼きが進行し、焼成
も低い温度で行えるのである。試作結果によれ
ば、なかでもｘの値がほぼ0.01である場合に特に
良好な結果が得られている。
また、主成分となる（Pb−Ba）（Zr−Ti）O3
系磁器において、PbとBaの割合Ａを0.17≦Ａ≦
0.25としたのは、Ａが0.25を超えるとキユリー温
度が下がり急激に圧電歪定数が小さくなるし、逆
にＡが0.17未満だと誘電率が下がつて圧電歪定数
が小さくなるためである。
更に、主成分となる（Pb−Ba）（Zr−Ti）O3
系磁器において、ZrとTiの割合Ｂを0.53≦Ｂ≦
0.55としたのは、Ｂが0.55を超えるとキユリー温
度が下がり圧電歪定数が小さくなる傾向にあり、
逆にＢが0.53未満の場合も圧電歪定数が小さくな
るからである。特にこのZrとTiの割合Ｂは、Pb
とBaとの割合Ａと相関があり、Ａが0.20以上の
ときは0.53〜0.54が特に望ましく、Ａが0.20以下
のときは0.53近傍が特に望ましい。
次に本発明の実施例について述べる。
［実施例］
PbO、ZrO2、TiO2、BaCO3、WO3、Bi2O3の
各原料を秤量配合しボールミルで20時間混合す
る。そして、得られた混合物を800〜900℃で２時
間仮焼きする。その後、再度ボールミルで微粉砕
し、乾燥した後、ポリビニルアルコール等の結合
剤を加えて造粒し、1000〜3000Kg／cm2の圧力で20
mmφの円板状に成形する。これを1200〜1300℃で
１〜２時間焼成する。焼成した円板をラツプ盤で
厚さ１mmに研磨加工し、その表面に銀電極を焼き
付ける。最後に、その電極に直流電圧20〜
30kV／cmを30〜50℃程度のシリコンオイル中で
１時間程度印加しつづけ分極する。
このようにして得られた19種の試料について、
誘電率ε33 T／ε0、電気−機械結合係数kp（％）、圧
電歪定数｜d31｜（×10-12m/V）、キユリー温度Tc
（℃）、および抗電界Ec（kV／cm）を測定した。抗
電界はソーヤ・タワ回路を用い60Hzで測定した。
測定結果の一例を次表に示す。
The present invention relates to the improvement of piezoelectric ceramic compositions mainly composed of (Pb-Ba)(Zr-Ti)O3 - based porcelain, and more specifically, since the mechanical displacement is large and the Curie temperature is high, Although not limited to,
For example, the present invention relates to a piezoelectric ceramic composition suitable for a piezoelectric bimorph for driving a micro-movement displacement body such as a dynamic actuator for a VTR. A piezoelectric bimorph actuator is an element that uses piezoelectric strain to drive a fine displacement object, and allows fine adjustment from submicrons to hundreds of microns.
By displacing the magnetic head in a direction perpendicular to the track, faithful tracking can be performed during slow, stationary, and high-speed searches. In such application fields, piezoelectric materials are required to have a large piezoelectric strain constant (d constant: amount of strain with respect to a constant applied voltage), a high Curie temperature, and a high coercive electric field. In actual use, the recommended temperature is about half the Curie temperature, so piezoelectric materials need to have a Curie temperature of about 150°C or higher, and can operate at low voltages. In order to
It must be about 10 -12 m/V or higher. However, high strain piezoelectric materials with various compositions have been known, but among these, the piezoelectric strain constant |
A material with a large d 31 | of about 300×10 -12 m/V has a low Kyrie temperature T c of about 110°C, and conversely, a material with a Kyrie temperature of 150°C or more has a piezoelectric strain constant |d 31 | of 250
It was low, less than ×10 -12 m/V, and was not practically satisfactory. The purpose of the present invention is to eliminate the drawbacks of the prior art as described above, and to provide a piezoelectric ceramic composition that has a large piezoelectric strain constant and a high Curie temperature, and is therefore optimal as a material for displacement elements such as bimorph actuators. It is about providing. The present invention will be explained in detail below. The piezoelectric ceramic composition according to the present invention has (1-x)Pb (1-A)
Ba A [Zr B Ti (1-B) ] O 3 +xPb (1-A) Ba A [Bi 2/3 W 1/3 ] O 3
It is expressed by the composition formula, 0.005≦x≦0.015, 0.17
It has a composition of ≦A≦0.25 and 0.53≦B≦0.55. In other words, the present invention provides (Pb-Ba)(Zr-Ti)O 3
The main component is (Pb-Ba) (Bi-
W) It has a structure in which a small amount of O 3 type porcelain is added. Here, the addition ratio of (Pb-Ba)(Bi-W)O 3- based porcelain x
The reason why x is set to 0.005≦x≦0.015 is because if x is too small, sinterability including calcination will be poor.
Things that can be sintered at about 1350-1400°C will be sintered at temperatures as high as 1350-1400°C.On the other hand, if x is too large, other crystal systems will be partially formed, reducing piezoelectric activity. This is mainly because the electromechanical coupling coefficient k p becomes smaller. In other words, Bi has a low melting point,
By adding it, calcination progresses and baking can be done at a low temperature. According to the results of trial production, particularly good results have been obtained when the value of x is approximately 0.01. In addition, the main component (Pb-Ba) (Zr-Ti)O 3
In system porcelain, the ratio A of Pb and Ba is 0.17≦A≦
The reason why it is set to 0.25 is that when A exceeds 0.25, the Curie temperature decreases and the piezoelectric strain constant decreases rapidly, and conversely, when A exceeds 0.17, the dielectric constant decreases and the piezoelectric strain constant decreases. Furthermore, the main component (Pb−Ba)(Zr−Ti)O 3
In system porcelain, the ratio B of Zr and Ti is 0.53≦B≦
The reason for setting it to 0.55 is that when B exceeds 0.55, the Curie temperature tends to decrease and the piezoelectric strain constant tends to decrease.
Conversely, when B is less than 0.53, the piezoelectric strain constant also becomes small. In particular, this ratio B of Zr and Ti is Pb
There is a correlation with the ratio A between Ba and Ba, and when A is 0.20 or more, 0.53 to 0.54 is particularly desirable, and when A is 0.20 or less, it is particularly desirable to be around 0.53. Next, examples of the present invention will be described. [Example] Raw materials PbO, ZrO 2 , TiO 2 , BaCO 3 , WO 3 and Bi 2 O 3 were weighed and blended and mixed in a ball mill for 20 hours. Then, the obtained mixture is calcined at 800 to 900°C for 2 hours. After that, it is finely ground again in a ball mill, dried, and then granulated by adding a binder such as polyvinyl alcohol.
Form into a disk shape of mmφ. This is baked at 1200 to 1300°C for 1 to 2 hours. The fired disk is polished to a thickness of 1 mm using a lapping disk, and a silver electrode is baked onto its surface. Finally, apply a DC voltage of 20~ to that electrode.
Polarize by continuing to apply 30 kV/cm in silicone oil at about 30 to 50°C for about 1 hour. Regarding the 19 types of samples obtained in this way,
Dielectric constant ε 33 T / ε 0 , electro-mechanical coupling coefficient k p (%), piezoelectric strain constant | d 31 | (×10 -12 m/V), Curie temperature T c
(°C) and coercive electric field E c (kV/cm) were measured. The coercive electric field was measured at 60Hz using a Sawyer-Tower circuit.
An example of the measurement results is shown in the table below.
【表】【table】
【表】
この表において、＊印で示す組成が本発明範囲
に含まれる組成を示しており、いずれも圧電歪定
数｜d31｜が250×10-12m/V以上で、かつキユリ
ー温度Tcも150℃以上となる良好な特性を呈す
る。また、特に＊＊印で示す試料番号７、９、10
の組成のものは、圧電歪定数｜d31｜が290×
10-12m/V以上でキユリー温度Tcも150℃以上と
なり、極めて良好なものが得られる。
本発明は前記のような組成の圧電磁器組成物で
あるから、圧電歪定数が大きく、かつキユリー温
度が高いというすぐれた効果を奏しうるものであ
り、それ故、バイモルフ・アクチユエータ等の変
位素子用材料として最適な圧電磁器組成物であ
る。[Table] In this table, the compositions marked with * are included in the scope of the present invention, and all of them have a piezoelectric strain constant |d 31 | of 250×10 -12 m/V or more and a Curie temperature T c also exhibits good characteristics at temperatures of 150°C or higher. In addition, especially sample numbers 7, 9, and 10 marked with **
The piezoelectric strain constant |d 31 | of the composition is 290×
At 10 -12 m/V or higher, the Curie temperature T c is also 150°C or higher, and extremely good results can be obtained. Since the present invention is a piezoelectric ceramic composition having the above-mentioned composition, it can exhibit excellent effects such as a large piezoelectric strain constant and a high Curie temperature, and is therefore suitable for use in displacement elements such as bimorph actuators. It is a piezoelectric ceramic composition that is ideal as a material.
Claims (1)
xPb(1-A)BaA［Bi2/3W1/3］O3なる組成式で表わさ
れ、0.005≦ｘ≦0.015、0.17≦Ａ≦0.25、0.53≦Ｂ
≦0.55なる組成の圧電磁器組成物。1 (1-x)Pb (1-A) Ba A [Zr B Ti (1-B) ]O 3 +
xPb (1-A) Ba A [Bi 2/3 W 1/3 ] O 3 Represented by the composition formula, 0.005≦x≦0.015, 0.17≦A≦0.25, 0.53≦B
A piezoelectric ceramic composition having a composition of ≦0.55.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59001108A JPS60144984A (en) | 1984-01-07 | 1984-01-07 | Piezoelectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59001108A JPS60144984A (en) | 1984-01-07 | 1984-01-07 | Piezoelectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60144984A JPS60144984A (en) | 1985-07-31 |
| JPH0442351B2 true JPH0442351B2 (en) | 1992-07-13 |
Family
ID=11492275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59001108A Granted JPS60144984A (en) | 1984-01-07 | 1984-01-07 | Piezoelectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60144984A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG115500A1 (en) * | 2002-10-09 | 2005-10-28 | Inst Materials Research & Eng | Method to produce a reliable piezoelectric thick film on a substrate |
-
1984
- 1984-01-07 JP JP59001108A patent/JPS60144984A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60144984A (en) | 1985-07-31 |
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