JPH0442729B2 - - Google Patents
Info
- Publication number
- JPH0442729B2 JPH0442729B2 JP3869483A JP3869483A JPH0442729B2 JP H0442729 B2 JPH0442729 B2 JP H0442729B2 JP 3869483 A JP3869483 A JP 3869483A JP 3869483 A JP3869483 A JP 3869483A JP H0442729 B2 JPH0442729 B2 JP H0442729B2
- Authority
- JP
- Japan
- Prior art keywords
- sec
- polymer substrate
- pressure
- magnetic recording
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005291 magnetic effect Effects 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 229920000307 polymer substrate Polymers 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- 230000005294 ferromagnetic effect Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 description 10
- 238000007740 vapor deposition Methods 0.000 description 10
- 238000001704 evaporation Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 229910020630 Co Ni Inorganic materials 0.000 description 4
- 229910002440 Co–Ni Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910020710 Co—Sm Inorganic materials 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910020637 Co-Cu Inorganic materials 0.000 description 1
- 229910020707 Co—Pt Inorganic materials 0.000 description 1
- 229910020516 Co—V Inorganic materials 0.000 description 1
- 229910017061 Fe Co Inorganic materials 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 229910018657 Mn—Al Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- FPVKHBSQESCIEP-JQCXWYLXSA-N pentostatin Chemical compound C1[C@H](O)[C@@H](CO)O[C@H]1N1C(N=CNC[C@H]2O)=C2N=C1 FPVKHBSQESCIEP-JQCXWYLXSA-N 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/85—Coating a support with a magnetic layer by vapour deposition
Landscapes
- Manufacturing Of Magnetic Record Carriers (AREA)
Description
産業上の利用分野
本発明は磁気録音、録画等の民生分野、情報の
記録等のコンピユータ等の産業分野に於て、磁気
記録の高密度化を果す磁気記録媒体の製造方法に
関する。
従来例の構成とその問題点
近年、バインダをもたない金属薄膜型の磁気記
録媒体が高密度記録の達成に不可欠となり、各方
面で開発が活発に進められている。現在実用に最
も近いレベルにあるのは、酸素中で蒸着された
Co−Ni合金薄膜から成る面内磁化膜であるが、
更に高密度化を図るにはCo−Cr系の垂直磁化膜
が有望視されているものの、これらの媒体を実用
環境での耐久性能の面から評価すると充分とは言
い難い。端的な例は、これらの媒体を65℃、95%
RHの環境に1ケ月放置した後、薄膜を構成する
Bs(飽和磁束密度)が10〜50%も減少する点であ
る。かかる性能の向上のために、合金成分の検
討、オーバーコートの検討等が行われ、各方面か
ら数多くの提案がなされているが、決定的な方法
が見出されていないのが現状である。
発明の目的
本発明は強磁製薄膜自体の耐久性を著しく改良
できる蒸着法に基づく磁気記録媒体の製造方法を
提供することを目的とする。
発明の構成
本発明の磁気記録媒体の製造方法は、真空雰囲
気下で高分子基板に強磁性蒸気を差し向けて前記
高分子基板上に強磁性薄膜層を形成する際に、蒸
着速度を1000Å/sec以上にすると共に真空雰囲
気の圧力を10-6パスカル以下にして耐久性の改良
された媒体を得ることを特徴とする。蒸発速度と
真空度の兼ね合いは後述する実験例ほか多くの実
験結果をまとめた図面より、耐久性に大きな変化
が見られることより伺える。蒸着速度が1000Å/
secよりも遅いと真空度の存在性が大きくなり生
産品質が不安定になることから、蒸着速度につい
ては1000Å/sec以上を選ぶのが好ましいといえ
る。また、真空度については、10-6Pa以下であ
れば、65℃95%RH環境下で1ケ月間放置時のBs
の変化率は2%以下で無視できることから10-6
Pa以下に管理することが好ましいことがわかる。
これらの臨界が生ずる理由は明らかでないが、
錆の発生がパルクと異なり、薄膜では欠陥に依存
する度合が強いため、非直線的な変化が結果的に
問題になるためと考えられる。
高分子基板は、ポリエステル基板、ポリアミド
基板、ポリイミド基板等が用いられ、本発明の蒸
着に先立ち、グロー処理やイオンボンバード処理
等の前処理を行うこともできる。
強磁性材料は、Fe、Co、Niの単体、Fe−Co、
Co−Ni、Fe−Co−Ni、Co−Cu、Co−Au、Co
−V、Co−Ru、Co−Cr、Co−Sm、Co−Pt、
Mn−Bi、Mn−Al等が用いられるが、これらの
加熱蒸発は、電子ビーム加熱方式が最も優れてい
る。
蒸着方法は、単なる電子ビーム蒸着法は勿論、
イオン化蒸着、電界蒸着等を用いることもでき
る。
10-6Pa以下の圧力は、油拡散ポンプと液体窒
素トラツプの組み合せでも良いし、クライオポン
プ、イオンポンプ等であつても実現できる。10-6
Pa以下の圧力に保持した上で、最大分圧が例え
ば、酸素であるように、外部よりのガス導入と併
用することも可能であるのは勿論である。
蒸着速度については、磁気テープ、磁気デイス
ク等の大量生産に利用する前提から、100Å/sec
〜10,000Å/secの範囲について自由に選択し得
るものであるが本発明では1,000Å/sec以上が
好ましいといえる。
実施例の説明
以下、本発明の製造方法を具体的な実験例に基
づいて説明する。
ベーキング可能な内容積4m3のステンレス製の
角型真空容器内に、直径50cmの回転キヤンを中心
とした高分子基板の巻取り系を配し、回転キヤン
の直下20cmの位置に電子ビーム蒸発源を配し排気
速度70,000/secの排気系を配設した。また蒸
着が実施される近くに電離真空計を配設して、圧
力測定を行えるようにした。
〔実験例 1〕
蒸発源にCo82%、Ni18%を装着し、入射角47°
以上で斜方蒸着法により、高分子基板としてのポ
リエチレンテレフタレート基板(厚み9.5μm)上
に0.06μmから0.22μmのCo−Ni薄膜を2000Å/
secで形成して磁気記録媒体を得た。その際、圧
力を残留気体の場合と、強制的に純度99.99%ア
ツプの酸素を導入して酸素を最大分圧とする場合
にわけて実施した。
比較例として、5×10-6Pa、1×10-5Paでも
蒸着を行つた値を代表的に示したが、他の結果
は、図面に範囲として示した通りである。試料番
号と、製造時の圧力条件は第1表のようである。
INDUSTRIAL APPLICATION FIELD The present invention relates to a method of manufacturing a magnetic recording medium that achieves high-density magnetic recording in the consumer field such as magnetic recording and video recording, and the industrial field such as information recording in computers. Conventional Structures and Their Problems In recent years, metal thin film magnetic recording media without binders have become essential to achieving high density recording, and their development is actively progressing in various fields. Currently, the closest level to practical use is vapor deposition in oxygen.
It is an in-plane magnetized film made of a Co-Ni alloy thin film.
Although Co--Cr-based perpendicular magnetization films are considered promising for achieving even higher density, evaluation of these media from the viewpoint of durability in a practical environment is far from satisfactory. A simple example is to store these media at 65℃ and 95%
After leaving it in an RH environment for one month, a thin film is formed.
This is the point where Bs (saturation magnetic flux density) decreases by 10 to 50%. In order to improve such performance, studies have been made on alloy components, overcoats, etc., and many proposals have been made from various fields, but at present no definitive method has been found. OBJECTS OF THE INVENTION An object of the present invention is to provide a method for manufacturing a magnetic recording medium based on a vapor deposition method that can significantly improve the durability of the ferromagnetic thin film itself. Structure of the Invention The method for manufacturing a magnetic recording medium of the present invention involves directing ferromagnetic vapor toward a polymer substrate in a vacuum atmosphere to form a ferromagnetic thin film layer on the polymer substrate, at a deposition rate of 1000 Å/min. sec or more and the pressure of the vacuum atmosphere is 10 -6 Pascal or less to obtain a medium with improved durability. The balance between evaporation rate and degree of vacuum can be seen from the large changes in durability seen in the drawings summarizing the results of many experiments, including the experimental examples described below. Deposition rate is 1000Å/
If the deposition rate is slower than sec, the degree of vacuum will increase and production quality will become unstable. Therefore, it is preferable to select a deposition rate of 1000 Å/sec or more. In addition, regarding the degree of vacuum, if it is 10 -6 Pa or less, Bs when left for one month in an environment of 65℃ and 95%RH
Since the rate of change in is less than 2% and can be ignored, 10 -6
It can be seen that it is preferable to control the temperature below Pa. The reason why these criticalities occur is not clear, but
This is thought to be because the occurrence of rust is different from that in pulp, and in thin films, it is highly dependent on defects, so non-linear changes become a problem as a result. As the polymer substrate, a polyester substrate, a polyamide substrate, a polyimide substrate, etc. are used, and prior to the vapor deposition of the present invention, pretreatment such as glow treatment or ion bombardment treatment can be performed. Ferromagnetic materials include Fe, Co, Ni, Fe-Co,
Co−Ni, Fe−Co−Ni, Co−Cu, Co−Au, Co
-V, Co-Ru, Co-Cr, Co-Sm, Co-Pt,
Mn-Bi, Mn-Al, etc. are used, but the electron beam heating method is most suitable for thermal evaporation of these materials. Vapor deposition methods include simple electron beam evaporation, as well as
Ionization vapor deposition, electric field vapor deposition, etc. can also be used. A pressure of 10 -6 Pa or less can be achieved by a combination of an oil diffusion pump and a liquid nitrogen trap, or by a cryopump, ion pump, etc. 10 -6
Of course, it is also possible to maintain the pressure at Pa or lower and to use it in conjunction with introducing a gas from the outside so that the maximum partial pressure is, for example, oxygen. The deposition rate is 100 Å/sec, based on the assumption that it will be used for mass production of magnetic tapes, magnetic disks, etc.
Although it can be freely selected in the range of ~10,000 Å/sec, it can be said that 1,000 Å/sec or more is preferable in the present invention. Description of Examples Hereinafter, the manufacturing method of the present invention will be explained based on specific experimental examples. A polymer substrate winding system is placed around a rotating can with a diameter of 50 cm in a rectangular stainless steel vacuum container with an internal volume of 4 m3 that can be baked, and an electron beam evaporation source is placed 20 cm directly below the rotating can. An exhaust system with an exhaust speed of 70,000/sec was installed. Additionally, an ionization vacuum gauge was installed near the deposition site to enable pressure measurements. [Experimental example 1] The evaporation source was equipped with Co82% and Ni18%, and the incident angle was 47°.
Using the above method, a Co-Ni thin film of 0.06 μm to 0.22 μm was deposited at a thickness of 2000 Å on a polyethylene terephthalate substrate (9.5 μm thick) as a polymer substrate using the oblique evaporation method.
sec to obtain a magnetic recording medium. At this time, the pressure was divided into two cases: one with residual gas, and one where oxygen with a purity of 99.99% was forcibly introduced to reach the maximum partial pressure of oxygen. As a comparative example, values obtained by performing vapor deposition at 5×10 −6 Pa and 1×10 −5 Pa are shown as representative values, but other results are as shown as ranges in the drawings. The sample numbers and pressure conditions during production are as shown in Table 1.
蒸発源を、回転キヤン直下をAとし、高分子基
板が回転キヤンに沿つて入つてくる側をBとする
二源とした場合(A,Bの中心間距離は11cmとし
た。)に、A側の材料をCo100%に固定し、B側
の材料をCr,Sm,V、の3種類からひとつずつ
選んで、電子ビームの滞在時間を変えて、夫々の
合金成分でB成分を、全体に対する重量%で10%
〜33%の範囲について可変し、膜厚0.1μmの薄膜
を高分子基板としてのポリアミド基板上に50°以
上の入射角での斜方蒸着にて平均3000Å/secで
形成した。回転キヤンの温度は、250℃に保持し
て蒸着した。蒸着前に回転キヤン温度は300℃で
4時間保持し、圧力条件が長時間蒸着中に、一定
に保持できるように配慮して実施した。
Co−Cr、Co−Sm、Co−V系の夫々の膜につ
いて、共通する圧力条件と試料番号は第2表の如
くである。
比較例として、やはり5×10-6Pa、1×10-5
Paでの蒸着を行つた。
When there are two evaporation sources, A is directly below the rotating can and B is the side where the polymer substrate enters along the rotating can (the distance between the centers of A and B is 11 cm), A The material on the side is fixed to 100% Co, the material on the B side is selected from one of three types: Cr, Sm, and V, and the dwell time of the electron beam is changed to increase the B component for each alloy component relative to the whole. 10% by weight%
A thin film with a thickness of 0.1 μm was formed on a polyamide substrate as a polymer substrate by oblique deposition at an incident angle of 50° or more at an average rate of 3000 Å/sec. The temperature of the rotating can was maintained at 250°C during the deposition. Before vapor deposition, the rotating can temperature was maintained at 300° C. for 4 hours, and care was taken to maintain the pressure conditions constant during vapor deposition for a long time. Common pressure conditions and sample numbers for Co-Cr, Co-Sm, and Co-V films are shown in Table 2. As a comparative example, 5×10 -6 Pa, 1×10 -5
Vapor deposition with Pa was performed.
〔実験例2〕と同じ位置関係の二源蒸発源を用
いて、A側をCo100%一定とし、B側として、
Cr、Ru、Wの3種類の中からひとつずつ選び、
〔実験例3〕と同様にし、マスキング方法だけ変
更し、垂直蒸着(入射角は±6°以内となるように
した。)して、垂直磁化膜を得た。
比較例として、高周波二極スパツタ法により
0.1μm同一基板上に作成した。キヤリアガスは
Ar,Heの2種類で、圧力条件は10-1Paとしたも
のと、電子ビーム蒸着による(圧力条件は5×
10-6Pa、1×10-5Pa)ものを作成した。圧力条
件は第3表の如くである。
Using two evaporation sources with the same positional relationship as in [Experimental Example 2], the A side was made to have a constant Co of 100%, and the B side was
Choose one from each of the three types: Cr, Ru, and W.
A perpendicularly magnetized film was obtained in the same manner as in [Experimental Example 3], except that only the masking method was changed, and vertical evaporation was performed (the incident angle was within ±6°). As a comparative example, using the high frequency bipolar sputtering method,
It was created on the same substrate with a thickness of 0.1 μm. carrier gas is
Two types were used: Ar and He, with a pressure condition of 10 -1 Pa and an electron beam evaporation method (pressure condition was 5×
10 -6 Pa, 1×10 -5 Pa). The pressure conditions are as shown in Table 3.
【表】
このようにして得られた磁気記録媒体を8mm幅
に裁断し、100mの長さをリール巻回して、各種
の存在環境に保存する前後の磁気特性の変化を調
べた。飽和磁束密度Bsは、膜厚を測定し、振動
試料束計(VSM)により算出した。試料番号は
実験例で説明したものを用いてあり比較例につい
ては実験例で述べたもののうち、ベストの結果が
得られたもので代表させて示した。環境条件とし
て60℃90%RHに3ケ月保存した結果は第4表の
如くであつた。[Table] The thus obtained magnetic recording medium was cut to a width of 8 mm, wound on a reel to a length of 100 m, and changes in magnetic properties before and after storage in various environments were investigated. The saturation magnetic flux density Bs was calculated by measuring the film thickness and using a vibrating sample flux meter (VSM). The sample numbers used are those explained in the experimental examples, and the comparative examples are representative of those described in the experimental examples that yielded the best results. Table 4 shows the results of storage under environmental conditions of 60°C and 90% RH for 3 months.
【表】【table】
【表】
その他、65℃96%1ケ月、65℃95%3ケ月のテ
スト結果では更に差があきらかとなり、本発明の
製法により得られたものの耐久性は極めて良好で
あり、本発明の製法で得られた磁性層の耐久性の
一層の向上を、有機、無機のオーバーコートによ
り具体化することも、オーバーコート層厚みが
100Å程度でも可能となる点も併せると、その産
業上の価値は大きい。
なお、上記実施例において高分子基板の冷却、
搬送手段は回転キヤンであつたが、これは回転ベ
ルト等であつてもよい。
発明の効果
以上説明のように本発明の磁気記録媒体の製造
方法によると、蒸着速度と形成時の真空雰囲気の
圧力を決められた範囲に設定するだけで従来より
も耐久性の改良された媒体を得ることができるも
のである。[Table] In addition, the difference is even more obvious in the test results of 65℃ 96% for 1 month and 65℃ 95% for 3 months, and the durability of the product obtained by the manufacturing method of the present invention is extremely good. It is also possible to further improve the durability of the obtained magnetic layer by using an organic or inorganic overcoat, or by changing the thickness of the overcoat layer.
Combined with the fact that it is possible even with a thickness of about 100 Å, it has great industrial value. In addition, in the above embodiment, cooling of the polymer substrate,
Although the conveying means was a rotating can, it may also be a rotating belt or the like. Effects of the Invention As explained above, according to the method of manufacturing a magnetic recording medium of the present invention, by simply setting the deposition rate and the pressure of the vacuum atmosphere during formation within a predetermined range, it is possible to create a medium with improved durability compared to conventional media. This is something that can be obtained.
図面は強磁性薄膜層形成時の蒸着速度と真空度
と飽和磁束密度の環境試験結果の関係図である。
The drawing is a diagram showing the relationship between the deposition rate, degree of vacuum, and environmental test results for the saturation magnetic flux density during the formation of a ferromagnetic thin film layer.
Claims (1)
し向けて前記高分子基板上に強磁性薄膜層を形成
する際に、蒸着速度を1000Å/sec以上にすると
共に形成時の真空雰囲気の圧力を10-6パスカル以
下にする磁気記録媒体の製造方法。1. When forming a ferromagnetic thin film layer on a polymer substrate by directing ferromagnetic vapor toward the polymer substrate in a vacuum atmosphere, the deposition rate is set to 1000 Å/sec or more, and the pressure of the vacuum atmosphere at the time of formation is A method for manufacturing a magnetic recording medium that reduces the temperature to 10 -6 Pascal or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58038694A JPS59165246A (en) | 1983-03-08 | 1983-03-08 | Manufacture of magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58038694A JPS59165246A (en) | 1983-03-08 | 1983-03-08 | Manufacture of magnetic recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59165246A JPS59165246A (en) | 1984-09-18 |
| JPH0442729B2 true JPH0442729B2 (en) | 1992-07-14 |
Family
ID=12532408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58038694A Granted JPS59165246A (en) | 1983-03-08 | 1983-03-08 | Manufacture of magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59165246A (en) |
-
1983
- 1983-03-08 JP JP58038694A patent/JPS59165246A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59165246A (en) | 1984-09-18 |
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