JPH0445056B2 - - Google Patents
Info
- Publication number
- JPH0445056B2 JPH0445056B2 JP59175915A JP17591584A JPH0445056B2 JP H0445056 B2 JPH0445056 B2 JP H0445056B2 JP 59175915 A JP59175915 A JP 59175915A JP 17591584 A JP17591584 A JP 17591584A JP H0445056 B2 JPH0445056 B2 JP H0445056B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- detection element
- thermopile
- infrared detection
- type infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001514 detection method Methods 0.000 claims description 21
- 239000010408 film Substances 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は熱赤外発生部の面積を熱赤外量で検知
することにより、熱赤外発生部の位置情報を得る
ための熱電堆型赤外検出素子に関するものであ
る。[Detailed Description of the Invention] Industrial Application Field The present invention provides a thermopile type infrared ray for obtaining positional information of a thermal infrared generating part by detecting the area of the thermal infrared generating part by the amount of thermal infrared. This relates to a detection element.
従来例の構成とその問題点
従来の熱電堆型赤外検出素子の構成を第１図に
示す。基板薄膜４の上に二種類の金属層１，２が
図の様に交互に配置されている。感温接合部６の
上に赤外吸収層３が配置されている。基準接合部
７は、左右の支持台５の上部の基板薄膜上に配置
されていて、赤外線が入射しても昇温しないよう
になつている。赤外吸収層３に赤外線が照射され
ると感温接合部６は、昇温し、基準接合部７との
温度差に相当した起電力が、ゼーベツク効果によ
り信号取出電極８に発生する。ここで、赤外吸収
層３の一部に微少面積の点状赤外線を照射する
と、その照射位置によつて発生する起電力が異な
る。即ち、感温接合部６に近い位置では発生起電
力は高くなる。Structure of a conventional example and its problems The structure of a conventional thermopile type infrared detection element is shown in FIG. Two types of metal layers 1 and 2 are alternately arranged on a substrate thin film 4 as shown in the figure. An infrared absorption layer 3 is arranged on the temperature-sensitive junction 6. The reference joint portion 7 is arranged on the substrate thin film on the upper part of the left and right support stands 5, and is designed not to rise in temperature even if infrared rays are incident thereon. When the infrared absorbing layer 3 is irradiated with infrared rays, the temperature-sensitive junction 6 rises in temperature, and an electromotive force corresponding to the temperature difference with the reference junction 7 is generated in the signal extraction electrode 8 due to the Seebeck effect. Here, when a part of the infrared absorbing layer 3 is irradiated with point-like infrared rays having a small area, the electromotive force generated differs depending on the irradiation position. That is, the generated electromotive force becomes high at a position close to the temperature-sensitive junction 6.
従つて、従来の熱電堆型赤外検出素子は面内感
度の不均一性が大きいという欠点がある。そのた
め、赤外照射面積計測型検出器として使用する場
合は、その感温接合部６をなるべく一点に集中配
置するような円型構造とし、これに赤外集光器と
してオプチカルコーンを組合せて使用する方法な
どが採用されている。 Therefore, the conventional thermopile type infrared detection element has a drawback of large non-uniformity in in-plane sensitivity. Therefore, when used as an infrared irradiation area measurement type detector, use a circular structure in which the temperature-sensitive junction 6 is concentrated at one point as much as possible, and use it in combination with an optical cone as an infrared condenser. methods are being adopted.
第２図がその構成の一例であるが、入射赤外線
はオプチカルコーン２２の入口部の仮想面上で像
を結ぶようにしてあり、この仮想面で赤外発生部
の面積に対応した赤外線を受け入れることにな
る。入射した赤外線は、オプチカルコーン２２の
内部鏡面で反射されて、全て最終的には熱電堆の
感温接合部を覆つている赤外吸収層２１に到達す
る。 Figure 2 shows an example of its configuration, in which the incident infrared rays form an image on a virtual plane at the entrance of the optical cone 22, and this virtual plane receives infrared rays corresponding to the area of the infrared generating part. It turns out. The incident infrared rays are reflected by the internal mirror surface of the optical cone 22 and finally reach the infrared absorbing layer 21 covering the temperature-sensitive junction of the thermopile.
このような構成にすれば、赤外吸収層での赤外
線はほゞ均一に分布するので、面内不均一の欠点
を解決することができる。 With such a configuration, the infrared rays in the infrared absorbing layer are distributed almost uniformly, so that the drawback of in-plane non-uniformity can be solved.
しかし余分なオプチカルコーン２２を採用しな
ければならず、これは検出部の寸法増大につなが
る。更に赤外結像面が大きくなるので、光学設計
にも大きな影響を与える。即ち、同一分解能を達
成しようとすれば、結像面が大きいほど焦点距離
の長い光学系が必要となり、同一の明るさを達成
しようとすれば、口径の大きな集光系が必要とな
る。 However, an extra optical cone 22 must be employed, which increases the size of the detection section. Furthermore, since the infrared imaging surface becomes larger, it also has a large impact on optical design. That is, if the same resolution is to be achieved, the larger the imaging plane is, the longer the focal length optical system is required, and if the same brightness is to be achieved, a condensing system with a larger aperture is required.
発明の目的
本発明は、熱電堆型赤外検出素子における面内
感度不均一性を解消し、オプチカルコーン等の光
学設計上の制約となるような構成をとらずに、赤
外照射面積計測が可能な熱電堆型赤外検出素子を
実現することを目的とする。Purpose of the Invention The present invention eliminates in-plane sensitivity non-uniformity in a thermopile type infrared detection element, and enables infrared irradiation area measurement without using a configuration such as an optical cone that is a constraint on optical design. The aim is to realize a thermopile-type infrared detection element that is possible.
発明の構成
本発明は基板薄膜上に二種類の細状金属薄層が
交互にその両端が重なるように直列に配列され、
その接合部が１つおきに感温接合部に基準接合部
に分離配置され、感温接合部上に電気・熱的絶縁
層、熱的良伝導層および赤外吸収層を順次配列し
た熱電堆型赤外検出素子である。Structure of the Invention The present invention comprises two types of thin metal thin layers arranged in series on a substrate thin film so that their ends overlap alternately,
The thermoelectric stack is arranged such that every other junction is separated into a temperature-sensitive junction and a reference junction, and an electrical/thermal insulating layer, a thermally conductive layer, and an infrared absorbing layer are sequentially arranged on the temperature-sensitive junction. This is a type infrared detection element.
実施例の説明
以下本発明の実施例について図面とともに詳細
に説明する。DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
本発明による熱電堆型赤外検出素子の実施例を
第３図ａ，ｂに示す。耐熱性有機フイルムなどの
基板薄膜３４上に二種類の金属薄層の感温結合部
３６上に電気的・熱的絶縁層３９が配置され、そ
の上に熱的良伝導層４０が配置され、更にその上
に赤外吸収層３３が配置されている。赤外吸収層
３３での熱吸収による昇温現象は、熱的良伝導層
４０と熱的絶縁層３９を介して感温接合部３６に
伝わるので、熱的良伝導層４０面内で感温接合部
３６の１ピツチ分に相当する部分が均一温度分布
になつた状態で、熱的絶縁層３９を経由して、感
温接合部３６配列に到達する。従つて、このよう
な均一昇温作用により感温接合部３６の不連続性
を補つて、面内感度の均一な熱電堆型赤外検出素
子が実現できる。 An embodiment of the thermopile type infrared detection element according to the present invention is shown in FIGS. 3a and 3b. On a substrate thin film 34 such as a heat-resistant organic film, an electrically and thermally insulating layer 39 is disposed on a temperature-sensitive bonding portion 36 of two types of thin metal layers, and a thermally conductive layer 40 is disposed thereon. Furthermore, an infrared absorbing layer 33 is arranged thereon. The temperature increase phenomenon due to heat absorption in the infrared absorbing layer 33 is transmitted to the temperature-sensitive junction 36 via the thermally conductive layer 40 and the thermally insulating layer 39, so that the temperature is not sensed within the surface of the thermally conductive layer 40. The temperature-sensitive junctions 36 are reached via the thermal insulating layer 39 in a state where a portion corresponding to one pitch of the junctions 36 has a uniform temperature distribution. Therefore, such a uniform temperature raising effect compensates for the discontinuity of the temperature-sensitive junction 36, and a thermopile-type infrared detection element with uniform in-plane sensitivity can be realized.
次に具体的実施例について説明する。第３図に
おいて、二種類の金属はビスマスとアンチモンと
し、基板薄膜３４は厚さ15μｍのカプトンフイル
ムとし、支持台３５は銅ブロツク、信号取出電極
３８は金の蒸着膜とする。 Next, specific examples will be described. In FIG. 3, the two metals are bismuth and antimony, the substrate thin film 34 is a Kapton film with a thickness of 15 μm, the support base 35 is a copper block, and the signal extraction electrode 38 is a vapor-deposited gold film.
ビスマスとアンチモンは蒸着膜で薄層を形成
し、感温接合部３６の寸法は80μｍ×80μｍ、隣
接する感温接合部３６との間隔は20μｍとする。
従つて、感温接合部３６は0.1mmに１ケの割合で
並び、その個数は30ケである。感温接合部３６と
基準接合部３７との間隔は１mmで基準接合部３７
の寸法は180μｍ×180μｍとする。 Bismuth and antimony are deposited to form a thin layer, and the dimensions of the temperature-sensitive junction 36 are 80 μm×80 μm, and the distance between adjacent temperature-sensitive junctions 36 is 20 μm.
Therefore, the temperature-sensitive joints 36 are arranged at a rate of one per 0.1 mm, and the number is 30. The distance between the temperature-sensitive joint 36 and the reference joint 37 is 1 mm.
The dimensions shall be 180μm x 180μm.
感温接合部３６の配列面上に、熱絶縁層３９と
して寸法0.1mm×3.0mm×0.015mmｔのポリスチレン
膜を塗布する。溶剤を乾燥により除去し、固化し
たあと、同一面上に熱的良伝導層４０として金蒸
着膜（厚さ1μｍ）を重ね、更にその上に赤外吸
収層３３としてカーボン微粉をバインダーで混ぜ
た黒化膜を塗布する。 A polystyrene film having dimensions of 0.1 mm x 3.0 mm x 0.015 mm is applied as a thermal insulating layer 39 on the array surface of the temperature-sensitive junctions 36 . After the solvent was removed by drying and solidified, a gold evaporated film (thickness 1 μm) was layered on the same surface as a thermally conductive layer 40, and fine carbon powder was mixed with a binder to form an infrared absorption layer 33 on top of it. Apply a blackening film.
このようにして製作された熱電堆型赤外検出素
子は、入射赤外線を黒化膜で効率良く吸収し、そ
の熱吸収により赤外照射部分は昇温する。次に金
蒸着膜により、赤外吸収熱は横方向に金蒸着膜内
を熱伝導で拡がると同時に、基板薄膜方向にも同
様に熱伝導で拡がりビスマス／アンチモンの感温
接合部の温度上昇させることになる。 The thermopile-type infrared detection element manufactured in this manner efficiently absorbs incident infrared rays with the blackened film, and the temperature of the infrared irradiated portion rises due to the heat absorption. Next, due to the gold evaporation film, the infrared absorbed heat spreads laterally within the gold evaporation film by thermal conduction, and at the same time, it also spreads in the direction of the substrate thin film by heat conduction, raising the temperature of the bismuth/antimony temperature-sensitive junction. It turns out.
ここで、横方向の熱伝導と厚さ方向の熱伝導の
熱時定数を見積ると次のようになる。 Here, the thermal time constants of lateral heat conduction and thickness direction heat conduction are estimated as follows.
τ1＝Hρl2／λ＝0.24ｍsec (1)
ここで、
比熱Ｈ＝0.2cal／（gf.deg）
熱伝導率λ＝150cal／（mm．Hr.deg）
密度ρ＝0.02gf／mm3
拡散距離ｌ＝0.05mm
拡散距離ｌは感温接合部３６の並びのくりかえ
し間隔の1/2とした。即ち、赤外照射部から両方
向へ熱が拡がる（0.05mm×２方向）現象に関する
熱時定数を求めた。 τ 1 = Hρl 2 /λ=0.24msec (1) Here, Specific heat H=0.2cal/(gf.deg) Thermal conductivity λ=150cal/(mm.Hr.deg) Density ρ=0.02gf/mm 3 Diffusion Distance 1 = 0.05 mm The diffusion distance 1 was set to 1/2 of the repeating interval of the temperature-sensitive junctions 36. That is, the thermal time constant related to the phenomenon in which heat spreads in both directions from the infrared irradiation section (0.05 mm x 2 directions) was determined.
厚さ方向の熱伝導については、ほとんど熱絶縁
層３９の熱伝導で決まるので、次のように計算で
きる。 The heat conduction in the thickness direction is determined mostly by the heat conduction of the thermal insulating layer 39, so it can be calculated as follows.
τ2＝Hρl2／λ＝0.8ｍsec (2)
ここで、
比熱Ｈ＝0.2cal／（gf.deg）
熱伝導率λ＝0.2cal／（mm．Hr.deg）
密度ρ＝１×10-3gf／mm3
拡散距離ｌ＝0.015mm
拡散距離ｌは、熱絶縁層の厚さである。これ
で、赤外吸収熱が、感温接合部に達する現象にお
ける熱時定数を算出できた。 τ 2 = Hρl 2 /λ=0.8msec (2) Here, Specific heat H=0.2cal/(gf.deg) Thermal conductivity λ=0.2cal/(mm.Hr.deg) Density ρ=1×10 -3 gf/mm 3 Diffusion length l = 0.015 mm Diffusion length l is the thickness of the thermal insulation layer. With this, we were able to calculate the thermal time constant for the phenomenon in which infrared absorbed heat reaches the temperature-sensitive junction.
両者を比較すると、横方向への熱拡散が厚さ方
向の0.3倍の熱時定数であり、それだけ短時間に
赤外吸収熱が均一化することがわかる。 Comparing the two, it can be seen that the thermal time constant for heat diffusion in the lateral direction is 0.3 times that in the thickness direction, and that the infrared absorbed heat becomes uniform in a correspondingly short time.
ここで、熱絶縁層３９の厚さを増せば、均一性
は良くなるが、それは赤外検出器としての熱時定
数を大きくし、かつ熱容量増大のため赤外感度低
下を招くので、赤外検出器の特性を総合的に考え
ると5μｍ〜50μｍが適切な条件である。本実施例
は、この範囲に入つている。 Here, if the thickness of the thermal insulating layer 39 is increased, the uniformity will be improved, but this will increase the thermal time constant of the infrared detector and cause a decrease in infrared sensitivity due to an increase in heat capacity. Considering the characteristics of the detector comprehensively, 5 μm to 50 μm is an appropriate condition. This embodiment falls within this range.
横方向への均一化という点では、感温接合部が
密に配列していれば、(1)式のｌが小さくなり、熱
時定数が短縮される。従つて、本発明の目的を達
するのに必要な条件として、実施例で説明した
0.1mmピツチがその限界条件で、これより間隔が
粗くなると、面内感度均一性に直接影響が現われ
てくる。 In terms of uniformity in the lateral direction, if the temperature-sensitive junctions are densely arranged, l in equation (1) will become smaller and the thermal time constant will be shortened. Therefore, the conditions explained in the Examples are necessary to achieve the purpose of the present invention.
The limit condition is 0.1 mm pitch, and if the pitch becomes coarser than this, the in-plane sensitivity uniformity will be directly affected.
又、熱伝導性薄膜４０については、金属性で容
易に製作可能なアルミニウム蒸着膜、金蒸着膜を
用いるとほゞその熱伝導率は150cal（mm．Hr／
deg）以上であり、この数値を用いて設計した熱
電堆型赤外線検出器は、製作技術上も何らの困難
がなく実現可能である。 Regarding the thermally conductive thin film 40, if an aluminum evaporated film or a gold evaporated film, which is metallic and easily manufactured, is used, the thermal conductivity is approximately 150 cal (mm.Hr/
degree), and a thermopile-type infrared detector designed using this value can be realized without any difficulties in manufacturing technology.
他の実施例として、赤外吸収層を金黒蒸着膜と
し、その他は既述の通りとする例をあげることが
できる。金黒は、窒素90％水素10％の混合ガス１
〜5Torr中で金を厚さ約1μｍ蒸着することによつ
て得られる。 As another example, an example can be given in which the infrared absorbing layer is a gold-black vapor deposited film, and the rest is as described above. Gold black is a mixed gas of 90% nitrogen and 10% hydrogen.
Obtained by depositing gold to a thickness of about 1 μm in ~5 Torr.
発明の効果
以上のように、本発明は二種類の金属層の接合
部上に電気的・熱的絶縁層と熱的良伝導層を介し
て赤外吸収層を形成した熱電堆型赤外検出素子
で、熱電堆型赤外検出素子の面内感度を均一にす
る効果があり、実施例では、感度のバラツキは±
0.1％であつた。Effects of the Invention As described above, the present invention provides a thermopile type infrared detection device in which an infrared absorbing layer is formed on the joint of two types of metal layers via an electrically/thermal insulating layer and a thermally conductive layer. This element has the effect of making the in-plane sensitivity of the thermopile type infrared detection element uniform, and in the example, the variation in sensitivity was ±
It was 0.1%.
これにより、オプチカルコーンのような集光器
は不要となり、結像寸法も３mmにおさえることが
でき、小型の光学系設計が可能となる。 This eliminates the need for a condenser such as an optical cone, and the imaging size can be kept to 3 mm, making it possible to design a compact optical system.
第１図ａ，ｂは、従来の熱電堆型赤外線検出素
子の一例を示す平面図及びそのＡ−A′断面図、
第２図はオプチカルコーンを用いた従来の熱電堆
型赤外線検出素子の実施例を示す断面側面図、第
３図ａ，ｂは、本発明による熱電堆型赤外検出素
子の構成を示す平面図及びそのＡ−A′断面図で
ある。
１，２，３１，３２……金属薄層、３，２１，
３３……赤外吸収層、４，３４……基板薄膜、
５，３５……基板薄膜支持台、６，３６……感温
接合部、７，３７……基準接合部、８，３８……
信号取出し電極、２２……オプチカルコーン、３
９……電気的・熱的絶縁層、４０……熱的良伝導
層。
FIGS. 1a and 1b are a plan view showing an example of a conventional thermopile-type infrared detection element and a sectional view taken along line A-A',
FIG. 2 is a cross-sectional side view showing an example of a conventional thermopile-type infrared detection element using an optical cone, and FIGS. 3a and 3b are plan views showing the configuration of a thermopile-type infrared detection element according to the present invention. and its AA' cross-sectional view. 1, 2, 31, 32...metal thin layer, 3, 21,
33... Infrared absorption layer, 4, 34... Substrate thin film,
5, 35... Substrate thin film support stand, 6, 36... Temperature sensitive junction, 7, 37... Reference junction, 8, 38...
Signal extraction electrode, 22...Optical cone, 3
9... Electrical/thermal insulating layer, 40... Good thermal conductivity layer.
Claims (1)
両端が重なるように直列に配置され、前記二種類
の金属層の接合部がひとつおきに、感温接合部と
基準接合部に分離配置されており、前記感温接合
部配列上に、電気的・熱的絶縁層、熱的良伝導層
および赤外吸収層を順次重畳して配置されている
ことを特徴とする熱電堆型赤外検出素子。 ２ 二種類の金属薄層により形成された感温接合
部が0.1mm以下のピツチ間隔で並んでいることを
特徴とする特許請求の範囲第１項記載の熱電堆型
赤外検出素子。 ３ 電気的・熱的絶縁層の厚さが5μｍ〜50μｍで
あることを特徴とする特許請求の範囲第１項記載
の熱電堆型赤外検出素子。 ４ 熱的良伝導層の熱伝導度が150cal／（mm・
Hr・deg）であることを特徴とする特許請求の範
囲第１項記載の熱電堆型赤外検出素子。 ５ 基板薄膜が耐熱性有機フイルムであることを
特徴とする特許請求の範囲第１項記載の熱電堆型
赤外検出素子。[Claims] 1. Two types of thin metal layers are alternately arranged in series on a substrate thin film so that their ends overlap, and every other joint between the two types of metal layers is a temperature-sensitive joint. It is characterized in that it is arranged separately at the reference junction, and an electrically and thermally insulating layer, a thermally conductive layer, and an infrared absorbing layer are sequentially superimposed on the temperature-sensitive junction array. A thermopile type infrared detection element. 2. The thermopile-type infrared detection element according to claim 1, wherein the temperature-sensitive junctions formed by two types of metal thin layers are arranged at a pitch interval of 0.1 mm or less. 3. The thermopile type infrared detection element according to claim 1, wherein the thickness of the electrically and thermally insulating layer is 5 μm to 50 μm. 4 The thermal conductivity of the thermally conductive layer is 150cal/(mm・
2. The thermopile type infrared detection element according to claim 1, wherein the thermopile type infrared detection element is 5. The thermopile-type infrared detection element according to claim 1, wherein the substrate thin film is a heat-resistant organic film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59175915A JPS6153530A (en) | 1984-08-24 | 1984-08-24 | Thermopile type infrared detection element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59175915A JPS6153530A (en) | 1984-08-24 | 1984-08-24 | Thermopile type infrared detection element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6153530A JPS6153530A (en) | 1986-03-17 |
| JPH0445056B2 true JPH0445056B2 (en) | 1992-07-23 |
Family
ID=16004470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59175915A Granted JPS6153530A (en) | 1984-08-24 | 1984-08-24 | Thermopile type infrared detection element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6153530A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0682848B2 (en) * | 1987-06-19 | 1994-10-19 | 静一 田沼 | Infrared sensor |
| US5393351A (en) * | 1993-01-13 | 1995-02-28 | The United States Of America As Represented By The Secretary Of Commerce | Multilayer film multijunction thermal converters |
| JP2010261908A (en) * | 2009-05-11 | 2010-11-18 | Geomatec Co Ltd | Laser power sensor |
| CN104764535A (en) * | 2015-03-13 | 2015-07-08 | 东莞捷荣技术股份有限公司 | Temperature measuring device and intelligent milk bottle sleeve |
-
1984
- 1984-08-24 JP JP59175915A patent/JPS6153530A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6153530A (en) | 1986-03-17 |
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