JPH0445969B2 - - Google Patents

Description

[Detailed description of the invention]

The present invention moves each exposure area of a thin plate such as a wafer repeatedly to the mask position in a step-and-repeat manner, supports only each exposure area of the thin plate, and adjusts the position and minute gap between the exposure part and the mask. The present invention relates to a step-and-repeat type proximity exposure apparatus for exposure. Conventionally, in order to expose thin plates such as silicon wafers, bubble wafers, ceramic substrates, and printed circuit boards, the relative position of the thin plate and a mask placed opposite to the thin plate with a small gap therebetween is adjusted, and It has been necessary to detect the degree of flatness of these and adjust the minute gaps to make them uniform. However, these adjustment devices are complicated and large-scale, making the devices large and expensive, causing problems in terms of work efficiency, and making it difficult to perform high-speed, high-precision exposure. That is, as shown in FIG. 1, a mask 2 and a thin plate 4 such as a wafer (hereinafter referred to as a wafer) are provided facing each other in parallel, and the wafer 4 is supported on a deformable chuck 7. Also, the deformed chuck 7 is
Supported by XY table 8. The position of the pattern 2a of the mask 2 is detected by a plurality of alignment detectors 3, and this detection signal is input to an XY table 8 or the like to position the wafer 4. Since the wafer 4 and the mask 2 must be placed apart from each other with a small gap g, the flatness of the wafer 4 and the mask 2 is measured by a wafer flatness detector 5 and a mask flatness detector 6. It is necessary to adjust the minute gap g using a deformation chuck 7, which will be explained later. For this reason, not only the large flatness detector 56 for measuring the flatness between the wafer 4 and the mask 2 is required, but also a large deformable chuck 7 for adjusting the minute gap g between the wafer 4 and the like. Needed.
After the positional relationship between the wafer 4 and the mask 2 is determined and the minute gap adjustment is completed, the wafer 4 is exposed to X-rays 1 from the light source. As shown in FIG. 2, the X-rays emitted from the X-ray target 22 of the X-ray 1, which is a point light source, transfer the pattern 23 of the mask 2 onto the wafer 4, but since the X-rays are incident at an inclined angle β. or the minute gap g mentioned above.
As a result, on the wafer 4, a blur 24, a shift 25, and a magnification error 30 as shown are generated. Therefore, in order to expose the pattern 23 of the mask 2 onto the wafer 4 with high precision, the minute gaps g are made uniform as described above, and the blur 24, shift 25 and magnification error 3 are reduced.
It is necessary to keep 0 constant. In order to make this minute gap g uniform, the deformed chuck 7 is formed into a box shape with an open upper side, a diaphragm type chuck member 26 is provided in the upper open part, and the wafer 4 is placed on top of the diaphragm chuck member 26. , by directly closing the opening with the wafer 4, or by standing up a large number of piezo elements 27 in the box of the deformed chuck 7, and inserting the tip side of the piezo elements 27 into the deformed chuck 7 through the vacuum port A29. Due to the introduced vacuum force, the diaphragm chuck member 26
Or the piezo element 2 is brought into contact with the lower surface side of the wafer 4.
7 is connected to a drive circuit 28, and the voltage is adjusted to expand and contract the piezo element 27, thereby deforming the diaphragm chuck member 26 and the like. The minute gap g is 10±1 μm in the case of the pattern 23 with a line width of 1 μm, and by expanding and contracting the piezo element 27, the surface of the wafer 4 can be deformed into an arbitrary shape and the minute gap g can be made uniform. . As shown in FIG. 3, the piezo elements 27 described above are arranged at equal intervals and densely on the wafer 4. The reason why the piezo elements 27 are arranged closely is that it is not possible to accurately adjust the minute gap by adjusting only one location. On the other hand, even if the wafer 4 is 4 inches and the piezo elements 27 are arranged at 10 m/m intervals, approximately 109 pieces will be required, and for a 5 inch wafer 4, 153 pieces will be required. Become. Therefore, the deformable chuck 7 housing a large number of piezo elements 27 is not only heavy, but also has the disadvantage that maintenance and management of the large number of piezo elements 27 is difficult, and the reliability of the apparatus is reduced. In addition, in order to expand and contract the piezo elements 27, each piezo element 27
A drive circuit 28 corresponding to the above is required, and since the required voltage is a high voltage of 600V, it is impossible to downsize the drive circuit 28, and there are problems in terms of weight, maintenance management, cord processing, and reliability. It was happening. Furthermore, as described above, in order to position the wafer 4 at the pattern position of the mask 2, the deformable chuck 7 must be moved, and in order to perform this step-and-repeat, the deformable chuck 7 must be moved at high speed and with high precision. Must be moved and positioned. Therefore, a large and powerful stage such as the XY table 8 is required, making the apparatus expensive. For this reason, it has been difficult to achieve high-speed and high-precision exposure with conventional devices. An object of the present invention is to step-and-repeat each exposure area on a thin plate to an exposure position in the X-Y axis direction in order to solve the problems of the prior art described above, and to create a gap between each exposure area on the thin plate and a mask at the exposure position. at least X- of each exposed area of the thin plate.
In order to position the Y-axis direction with high precision with respect to the mask, and to make the deformable chuck and the table that supports this deformable chuck smaller and lighter, the circuit pattern that was previously formed on the mask can be exposed to each exposure on the thin plate. To provide a step-and-repeat type proximity exposure device capable of sequentially exposing and transferring areas with high precision and at high speed. In order to achieve the above object, the present invention includes a thin plate moving means for holding a thin plate by a holding means and step-and-repeat each exposure area on the thin plate to an exposure position in the X-Y axis direction; and exposure means for sequentially exposing and transferring the circuit pattern formed on the mask to each exposure area on the thin plate while forming a minute gap between the mask and each exposure area on the thin plate. The step-and-repeat type proximity exposure apparatus has a size corresponding to each exposure area of the thin plate, and uses the thin plate moving means to step and repeat each exposure area on the thin plate to the exposure position in the X-Y axis direction. Each time the exposure is repeated, the back side of each exposed area of the thin plate is sucked at the exposure position, and a plurality of vertical displacement generating means installed in each exposed area of the thin plate are driven and controlled, and each exposed area of the thin plate is partially moved. a deformation chuck means for deforming the thin plate, and at least a tilting stage and an X-Y fine movement stage supporting the deformation chuck means, the deformation chuck means adsorbing the back surface of each exposure area of the thin plate, and the thin plate moving means With the holding means releasing the holding of the thin plate, driving and controlling the plurality of vertical displacement generating means of the deformation chuck means to partially deform each exposure area of the thin plate and controlling the tilting stage. Controlling the inclination of each exposed area of the thin plate to make the gap between the mask and the inner surface of each exposed area of the thin plate uniform, and further detecting the relative error between the mask and each exposed area of the thin plate at least in the X-Y axis direction and position adjusting means for finely controlling the X-Y fine movement stage in the X-Y axis direction to align the position of each exposure area of the thin plate in the X-Y axis direction with respect to the mask. This is a step-and-repeat type proximity exposure device. Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. First, an overview of the embodiment will be explained with reference to FIGS. 4 and 5. A holding device 81 of the exposure apparatus 80 is composed of a ring-shaped member 55, a vacuum pump 57, etc., and the wafer 4 is vacuum-adsorbed to the ring-shaped member 55. This holding device 81 is placed on a step-and-repeat device 82 in the direction of arrow X-X' and in the direction of Y-
Sent in the Y′ direction. The wafer 4 has 12 exposure parts (exposure areas), as shown by two-dot chain lines 51, and the mask 2 is provided at a fixed position. Therefore, each exposed portion of the wafer 4 is positioned at the position of the mask 2 in a step-and-repeat manner by the step-and-repeat device 82 described above. A deformable chuck device 83 is provided opposite the mask 2. This deformed chuck device 83 is
As will be described in detail later, one exposure section moved to the position of the mask 2 is held by suction by the deformable chuck device 83, which is composed of a deformable chuck 64, a piezo element 27, and the like. The minute gap g between the mask 2 and the mask 2 is adjusted by the piezo element 27. The deformed chuck device 83 is the alignment device 8
Supported by 4. The alignment device 84 is composed of a fine movement XY stage 52, a tilting stage 62, a Z stage 63, etc., and adjusts the position of the exposure section of the wafer 4 in the X, Y, and Z directions. Detection device 8
5 is a reflecting mirror 61 in the XY direction, and a laser length measuring device 7
0 and wafer 4 and mask 2 (not shown)
The alignment device 84 and the deformable chuck device 83 are operated by detection signals from these flatness measuring devices. The control device 86 is the first
It is composed of a second controller 65, a second controller 66, an overall controller 67, etc., and controls each of the above devices. As described above, the wafer 4 is held for each exposure section, and position adjustment and minute gap adjustment are performed between the held exposure section and the mask 2, so that not only high-precision and high-speed exposure is possible, but also The deformable chuck device 83, alignment device 84, etc. are all smaller and lighter, making them easier to handle and cheaper, and the reliability of the device is improved. Examples will be described in more detail below. As shown in FIGS. 4 and 5, the holding device 81
The ring-shaped member 55 is formed from an annular body that surrounds the mask 2, and its peripheral edge grips the outer peripheral edge of the wafer 4 outside the effective area, thereby holding the wafer 4 parallel to and facing the mask 2. A notch 55a is formed in a portion of the peripheral edge of the ring-shaped member 55 to facilitate attachment of the wafer 4. Moreover, the ring-shaped member 5
A ring chuck portion 56 is carved on the peripheral edge side of the wafer 5 which is held with the wafer 4. Further, a member 54 is provided on the outer periphery of the ring-shaped member 55 and extends in the normal direction thereof, and a vacuum pump 57 is connected to the member 54 via a hose 71. and,
The ring chuck portion 56 and the vacuum pump 57 communicate through a passage provided in the member 54. Step-and-repeat device 82 or step-and-repeat Y stage 82a (hereinafter referred to as Y-stage) and step-and-repeat X
It consists of a stage 82b (hereinafter referred to as the X stage). The Y stage 82a is the holding device 8
1, a guide portion A53a on which the member 54 of No. 1 is placed slidably in the direction of the arrow Y-Y', a feed screw A87a screwed into the member 54, a step motor A58a that drives the feed screw A87a, etc. ing. Further, the X stage 82b is the Y stage 82.
It is composed of a guide part B87b on which a is slidably placed in the direction of the arrow X-X', a feed screw B87b that is screwed into the Y stage 82a, a step motor B58b that drives the feed screw B87b, etc. There is. The X stage 82b is supported by the base 68. The wafer 4 held by the holding device 81 is moved by the step-and-repeat device 82.
It is carried to the exposure position of the mask 2, and step-and-repeat is performed at that position to position the exposure area. The accuracy of the step-and-repeat is, for example, less than ±0.05 m/m at a stroke of 20 m/m. Note that both the step motor A 58a and the step motor B 58b are engaged with the second controller 66. Next, the deformable chuck device 83 is provided opposite to the mask 2, and its center position is made to coincide with the center exposure position P of the mask 2. As shown in FIG. 6, the deformable chuck device 83 includes a box 64 with the side of the mask 2 open, a large number of piezo elements 27 arranged vertically at equal intervals inside the box 64, and supported by the piezo elements 27. , a diaphragm chuck member 26 supported by closing the opening of the box body 64, and drive circuits 28 adjacent to each of the piezo elements 27, etc. The box body 64 has a vacuum port A2.
9. Vacuum ports B112 are formed, each communicating with a vacuum source (not shown). The inside of the box body 64 is evacuated by the vacuum port A29, and the diaphragm chuck member 26 is brought into close contact with the piezo element 27. The vacuum port B112 is a diaphragm chuck member 26
Groove portion 26a formed on the side that engages with the wafer 4
and is communicated via a hose 88. Therefore, the wafer 4 is attracted to the diaphragm chuck member 26. Although not explicitly shown, the modified chuck device 83 is engaged with the first controller 65. Next, as shown in detail in FIG. 6, the alignment device 84 is composed of a fine movement XY stage 52 supported on a base 68, a tilting stage 62 and a Z stage 63, etc. supported by this fine movement XY stage 52. Ru. The fine movement
It is composed of a piezo element 111 that is moved in the -X' direction. The fine movement Y stage 52a is a fine movement
A parallel plate spring 110 supported by the above-mentioned members of the stage 52b and similarly installed between the members, and a piezo element 1 that moves the above-mentioned members in the Y-Y′ direction.
It is composed of 11 mag. Further, the tilting stage 62 and Z stage 63 is a fine movement Y stage 52a.
It is composed of a plurality of piezo elements 111 that are supported by a X-X' axis or Y-
It is made to rotate around the Y′ axis. The above-mentioned member has the above-mentioned deformable chuck device 83.
is placed. Therefore, the deformable chuck device 8
The wafer 4 held by suction on the diaphragm chuck member 26 of
Coarse and fine movements are possible in the Z′ direction, etc. Although not explicitly shown, the piezo element 11 of the alignment device 84 is also connected to the drive circuit 28 and engaged with the first control 65. The laser reflecting mirror 61 of the detection device 85 detects slight movement.
Attached to the XY stage 52, the laser length measuring machine 7
0 detects the amount of adjustment in the X-X' direction and the Y-Y' direction. Further, although not shown explicitly, the flatness of the wafer 4 and the mask 2 are detected by respective flatness measuring instruments in the Z-Z' direction and the amount of adjustment in the rotational direction. A sensing device 85 is also engaged with the first controller 65 . The control device 86 includes first and second controllers 65 and 66 that control the respective devices described above.
and an overall controller 67 that controls these as a whole. Next, the operation of this embodiment will be explained. First, the movement of the wafer 4 by the step-and-repeat device 82 will be explained with reference to FIGS. 7a to 7l. As described above, the exposure area of the wafer 4 is divided into 12 areas as shown by the two-dot chain line 51. First, as shown in FIG. 7a, the mask 2 is placed at an exposure position P at its center, and the wafer 4 is positioned with its center at a load-and-load position M, supported by a holding device 81. Next, as shown in FIG. 7B, the exposure section 4a of the first wafer 4 is moved to the exposure position P of the mask 2 by the step-and-repeat device 82. After the exposure of the first exposure section 4a is completed, the seventh exposure section 4a is exposed.
As shown in FIG. c, the second exposure section 4b is positioned and exposed like the exposure position P by the step-and-repeat device 82. Continuing,
As shown in FIG. 7D, the third exposure section 4c is exposed, and the same process is repeated until the exposure of the twelfth exposure section 4l is completed, as shown in FIG. 7L. Then, the device returns to the load-and-load position M in FIG. 7a again, and completes the exposure of the entire wafer 4. Next, as shown in FIG.
However, when exposing an exposure area near the outer circumference of the wafer 4, a part of the diaphragm chuck member 26 may protrude from the outer circumference of the wafer 4. For this reason, the groove 26a formed in the diaphragm chuck member 26 is formed in the pattern 12.
It is divided into several sections such as 0, and each section is connected to a vacuum source. Therefore, by selecting the pattern 120 that acts as a vacuum,
The wafer 4 can be effectively attracted. Next, FIG. 9 shows the sequence of the exposure operation in this embodiment. The following sequence is controlled by the controller 86. Sequence number (hereinafter referred to as number) 90 indicates loading of the wafer 4. The outer peripheral edge of the wafer 4 is engaged with the ring-shaped member 55 of the holding device 81, and the vacuum pump 57 holds the wafer 4 by suction on the ring chuck 56. Position at the load and load position M mentioned above. Number 91 indicates confirmation of the lowering position of the modified chuck device 83. Since the deformed chuck device 83 is positioned at a position lowered by 100 μm due to movement in the Z direction by the Z stage 63 of the alignment device 84, this is confirmed. Number 92 indicates the positioning of the first exposure section 4a of the wafer 4. The first exposure section 4a is exposed to the exposure position P of the mask 2 by the step-and-repeat device 82.
is positioned at the bottom of the In this state, the wafer 4 and the deformed chuck device 83 are not in contact with each other.
Number 93 indicates the raised positioning of the modified chuck device 83. The deformable chuck device 83 is a Z stage 63
100μm higher than the lowered position. number
94 indicates suction of the wafer 4; Deformed chuck device 8
The diaphragm chuck member 26 of No. 3 is attached to the wafer 4.
The exposed portion 4a is attracted. Number 95 indicates unloading of wafer 4. With the exposure section 4a being attracted, the ring chuck section 56 of the holding device 81 is released from the attraction. Number 96 indicates wafer gap adjustment. The flatness of the exposed portion 4a of the wafer 4 and the mask are detected by a flatness detector, and based on the results, the exposed portion 4a is deformed by the expansion and contraction of the piezo element 27 in the deformable chuck device 83. number 97
indicates wafer alignment adjustment. Alignment adjustment consists of judgment of alignment detection number 99, and if alignment is Yes, number 101 is detected.
Proceed to exposure, and if N ₀ , proceed to fine adjustment of number 100. The alignment is adjusted by detecting the position of the exposure section 4a by the laser reflection mirror 61 of the detection device 85, and moving the parallel plate spring 110 by voltage-controlled expansion and contraction of the piezo element 111 of the alignment device 84. Judgment number 99 is Yes if the detected value is within the allowable value (0.1μm), otherwise
Do it as No. When adjusting the alignment, the wafer 4 is
The stage 63 is also lowered by about 20 μm. No. 102 shows the re-gripping of the wafer 4 by the ring chuck portion 56 of the holding device 81. The outer peripheral edge of the wafer 4 is gripped by a ring chuck 56 under the action of a vacuum pump 57. Number 103 indicates release of wafer adsorption by the deformed chuck device 83. The vacuum force from the vacuum port B112 of the deformable chuck device 83 is released, and the adsorption of the exposed portion 4a of the wafer 4 is released. Number 104 indicates the lowering of the modified chuck device 83. The deformable chuck device 83 is lowered by 100 μm,
Corresponds to number 91 above. Number 105 indicates thick point return of the deformed chuck device 83, alignment device 84, etc. The piezo elements 111, etc. of the alignment device 84, etc. all return to their origin and prepare for the next exposure section. Number 106 indicates full exposure confirmation. wafer 4
It is checked whether all the exposures of the exposure section have been completed. If Yes, proceed to unloading the wafer numbered 107, and if No, return to number 92, and repeat the same sequence as above. At number 107,
The wafer 4 is released from the holding device 81. With the above steps, the entire sequence ends. In the above, the difference between the first exposure section 4a and the second and subsequent exposure sections 4b to 4l is as follows. That is, since the first exposure section 4a is transported from the loading position M of the wafer 4 to the exposure position P of the mask 2, the wafer 4 is held by the holding device 8.
1, the error when gripping, the position error due to the above movement, etc. are added, so the amount to be aligned is large, 100 μm to 500 μm.
Since the second and subsequent ones are aligned at 1 degree number 97, the only errors are the positional error caused by the transfer of the wafer 4 between the deformable chuck device 83 and the holding device 81, and the movement error between the exposure units. , the amount to be aligned is 10μm to 100μm
The point is that it is small. Figures 10 and 11 display another embodiment. In the figures, the same reference numerals as in FIGS. 4 and 5 indicate the same parts or the same functions. In this embodiment, the holding device 81 is mainly different from the above embodiments, and is formed so as not to directly hold the wafer 4, and has the effect of preventing the wafer 4 from being contaminated. That is, as in the above embodiment, the ring-shaped member 1
Reference numeral 31 is formed from an annular body surrounding the mask 2, and its inner periphery is larger than the outer periphery of the wafer 4. The wafer 4 is attached to the peripheral edge of this ring-shaped member 131.
diaphragm member 13 having a larger outer circumference than
The outer peripheral edge of 0 is to be gripped. A ring chuck 56 communicating with a vacuum pump 57 is formed on the ring-shaped member 131, and the diaphragm member 130 is held by suction. The wafer 4 is placed on the diaphragm member 130. Therefore, in this state, the wafer 4 is placed in a movable state. While the wafer 4 is placed on the diaphragm member 130, the step-and-repeat device 82 moves the wafer 4 to the exposure position P of the mask 2 as described above.
Here, the first exposure section 49 is exposed to the diaphragm member 1 by the deformable chuck device 83.
30 is interposed and is held by suction. Since the diaphragm member 130 is a flexible member, the exposed portion 4a of the wafer 4
is securely held by the chuck device 83. Thereafter, the wafer 4 is placed in the same sequence as above.
exposure is performed. In this case, unlike the above embodiment, the wafer 4 is not directly held by the deformable chuck device 83 and the holding device 81;
There is no friction or contact between the wafer 4 and these devices, and the wafer 4 can be kept clean. Next, the effects of the above two embodiments will be explained. In the conventional technique, as shown in FIG. 1, the wafer 4 is placed on the deformable chuck 7 and moved to the exposure position of the mask 2, which requires large-scale movement and adjustment means. Since only the exposed portion is gripped and adjusted, the chuck portion of the wafer 4 is less than 1/10 the size, and is lightweight and highly rigid. Furthermore, the alignment device is less than 1/5 the size of the conventional one, making it not only lightweight but also capable of highly accurate adjustment.
In addition, the step-and-repeat device only needs to grip the wafer 4 and move it to the exposure position of the mask, and the weight is less than 1/100 compared to the conventional device.
It is extremely lightweight and inexpensive, and the wafer 4 can be moved to the exposure position at high speed. Conventionally, the positioning of the wafer 4 has been detected using a laser length measuring device using a laser reflecting mirror with a length of 100 m/m or more in order to cover the entire stroke of step-and-repeat. For this reason, the laser reflecting mirror is provided at a location away from the exposure section, making it difficult to perform highly accurate detection. In this embodiment, the laser reflection mirror 61 is directly attached to the fine movement XY stage 52.
Since the adjustment stroke is extremely small, within 1 m/m, a small laser reflecting mirror 61 or a corner cube type reflecting mirror is sufficient, and since it is provided near the exposure section, highly accurate positioning is possible. From the above, it is possible to achieve the effects of small size, light weight, high precision, and high speed. Next, a comparison with the prior art regarding the number of piezo elements used in the deformed chuck of the wafer will be explained. Now, if the number of piezo elements according to the conventional method is N and the number according to this embodiment is N', these can be expressed by the following formula. N=(H/P) ² ×S+α N'=(H/W+3) ^2Here , P is the pitch of the piezo element, H is the size of the master, S is the step-and-repeat number α is the piezo element around the periphery of the mask, Indicates the number of elements. Now, if the wafer is 4 inches and H/P=2, the piezo elements N and N' correspond to S and are as shown in Table 1.

[Table] From the above, if the number of exposure parts is 12 and S is 12, the number of piezo elements will be reduced by 80 and the cost will be less than 1/4. In addition, it is shown in FIGS. 12a to 12e. ·teeth
The intra-shot driver, o, is a peripheral driver. In the above two embodiments, the diaphragm chuck member 26 is used as the deformable chuck device 83, but the present invention is not limited to this, and any device may be used as long as it can control the deformation of the wafer by dividing the four sides of the wafer.
Alternatively, if no deformation is required, a normal chuck may be used. Also, if the precision of the step-and-repeat device is good, the fine movement XY stage 5 of the alignment device
2 may be removed. The X and Y stages 82b and 82a of the step-and-repeat device are moved by step motor B58b and step motor A5.
It is not limited to 8a, but may be a linear motor, or may be a hydraulic type instead of an electric type. Further, the fine movement XY stage 52 may also be of a type that uses electromagnetic force, a type that uses pressure, a lever type, or the like. As explained above, according to the present invention, each exposure area on the thin plate is moved step-and-repeat in the X-Y axis direction to the exposure position, and the gap between each exposure area on the thin plate and the mask is made uniform at the exposure position. At the same time, the position of each exposure area of the thin plate in at least the X-Y axis direction is positioned with high precision with respect to the mask, and the deformation chuck and the table supporting this deformation chuck are made smaller and lighter by forming the deformation chuck on the mask. The present invention has the effect of providing a small, inexpensive, step-and-repeat type proximity exposure apparatus that can sequentially expose and transfer a printed circuit pattern to each exposure area on a thin plate with high precision and at high speed.

[Brief explanation of the drawing]

Fig. 1 is a perspective view showing the main components of a conventional X-ray aligner for exposing wafers, etc. Fig. 2 is a sectional view showing the vicinity of the deformed chuck, and Fig. 3 is an explanation showing the arrangement of piezo elements in the deformed chuck. 4 is a front view showing the configuration of one embodiment of the present invention, FIG. 5 is a plan view thereof, FIG. 6 is a partial configuration diagram illustrating a modified chuck device and alignment device of one embodiment, and FIG. 7 FIGS. 7a to 7e are explanatory diagrams illustrating the moving state of the exposure section of the wafer in one embodiment, FIG. 8 is a partial front view illustrating the engagement state between the wafer and the deformable chuck device, and FIG. FIG. 10 is a front view showing the configuration of another embodiment of the present invention, FIG. 11 is a plan view thereof, and FIGS. 12 a to d show the arrangement of a conventional driver. FIG. 12e is a diagram showing the arrangement of the driver according to the present invention. 2... Mask, 4... Wafer, 26... Diaphragm chuck member, 27, 111... Piezo element, 28... Drive circuit, 29... Vacuum port A, 5
2... Fine movement XY stage, 55, 131... Ring chuck member, 57... Vacuum pump, 61...
Leather reflective mirror, 62... Inclined stage, 63
... Z stage, 64 ... Box body, 65 ... First controller, 66 ... Second controller, 6
8... Base, 70... Laser length measuring device, 80... Exposure device, 81... Holding device, 82... Step and repeat device, 83... Deformed chuck device,
84... alignment device, 85... detection device,
86...control device, 110...parallel plate spring, 11
2...Vacuum port B, 131...Diaphragm member.

Claims (1)

[Claims] 1 thin plate moving means for holding the thin plate by a holding means and step-and-repeat each exposure area on the thin plate to the exposure position in the X-Y axis direction; In a step-and-repeat type proximity exposure apparatus, the step-and-repeat type proximity exposure apparatus is equipped with an exposure means for sequentially exposing and transferring a circuit pattern formed on the mask to each exposure area on the thin plate while forming a minute interval in between. , has a size corresponding to each exposure area of the thin plate, and each time the thin plate moving means steps and repeats each exposure area on the thin plate to the exposure position in the X-Y axis direction, at the exposure position. a deformation chuck means for partially deforming each exposure area of the thin plate by adsorbing the back surface of each exposure area of the thin plate and driving and controlling a plurality of vertical displacement generating means installed in each exposure area of the thin plate; It has at least a tilting stage and an X-Y fine movement stage that support the deformable chuck means, and the deformable chuck means attracts the back surface of each exposed area of the thin plate, and the thin plate is released from being held by the holding means of the thin plate moving means. In this state, the plurality of vertical displacement generating means of the deformation chuck means are driven and controlled to partially deform each exposure area of the thin plate, and the tilting stage is controlled to control the inclination of each exposure area of the thin plate. The X-Y fine movement stage a step-and-repeat proxy, characterized in that it is equipped with a position alignment means for finely controlling the position of each exposure area of the thin plate in the X-Y axis direction with respect to the mask; Mitei exposure equipment.