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JPH044715B2 - - Google Patents
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JPH044715B2 - - Google Patents

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Publication number
JPH044715B2
JPH044715B2 JP58136382A JP13638283A JPH044715B2 JP H044715 B2 JPH044715 B2 JP H044715B2 JP 58136382 A JP58136382 A JP 58136382A JP 13638283 A JP13638283 A JP 13638283A JP H044715 B2 JPH044715 B2 JP H044715B2
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Prior art keywords
mosi
resistance
partial pressure
temperature
nitrogen
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JP58136382A
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JPS6028194A (en
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Priority to JP58136382A priority Critical patent/JPS6028194A/en
Publication of JPS6028194A publication Critical patent/JPS6028194A/en
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Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は、耐酸化性にすぐれ、熱衝撃性、高温
強度も良好で抵抗温度係数も大きく、例えばグロ
ープラグ用発熱体として用い得る導電性のセラミ
ツクヒータの製造方法に関するものである。 従来より発熱体としては、金属の場合にはニツ
ケル−クロム合金、鉄−クロム−アルミニウム合
金等の耐熱合金が使用され、セラミツクの場合に
は炭化珪素、珪化モリブデン等が使用されてい
る。 しかしながら金属発熱体の場合には使用温度は
1000〜1100℃程度が限界であり、それ以上の高温
では酸化腐食、溶断などが生じて使用不可能であ
る。炭化珪素(SiC)の場合は1600℃、珪化モリ
ブデン(MoSi2)の場合は1800℃程度まで使用可
能なものの、炭化珪素は比抵抗が極めて高いので
小型化に問題があり、珪化モリブデンは1300℃以
上で軟化が始まり、高温強度、熱衝撃性の面で問
題があり、例えば自動車のグロープラグ等の要求
仕様を満足することができなかつた。 本発明は、2珪化モリブデンの極めて優れた耐
熱性を利用すると同時に熱衝撃に弱い欠点を除去
し、又抵抗温度係数が大きいセラミツクヒータの
製造方法を提供することを目的とするものであ
る。 以下、本発明の詳細を実験例に基づいて説明す
る。 表1に示す各種高温材料を1000℃、15時間の条
件で電気炉中で酸化テストを行なつた。各材料の
重量変化率およびテスト前の初期比抵抗を同図に
示す。試料としては材料粉末をホツトプレスによ
り理論密度90%以上の密度に焼結させたものを
各々同一形状に切出した試料を用い、重量変化率
はテスト終了後に試料をアセトンで洗浄し重量変
化を測定して求めた。なお、Ni−Cr材料は市販
品を用いた。 表1より、SiCとMoSi2は耐酸化性が極めて良
好であり、他の材料はかなり酸化されることがわ
かる。しかしながら、SiCは初期比抵抗が非常に
高く、例えばグロープラグのように小型で低電圧
電源により作動する性質の発熱体への適用は極め
て困難である。なお表1中、ZrB2の重量変化率
がマイナスであるのは、アセトン洗浄中に酸化部
分が剥離したことによるものと認められる。 以上より、MoSi2は耐酸化性能、比抵抗の点で
最も優れたヒータ材料であるが、熱衝撃性に著し
く劣つており、また1000℃以上の高温域で軟化す
るという欠点を有する。発明者らはこの欠点を改
善するため、2珪化モリブデンと窒化珪素とより
なるセラミツクヒータの製造方法を発明した。但
し、MoSi2とSi3N4の混合焼結体を得るには製造
面で制約があり、特にMoSi2とSi3N4の混合体が
焼成時の雰囲気によつて強く影響をうけることを
発見した。第2図はその影響を説明するものであ
る。第2図は、その第2図に列記した出発原料に
複数の有機溶剤を加えて混合し、ドクターブレー
ド法により成形したシートをラミネートし、第2
図に示す各々の雰囲気で1600℃×1Hr、500Kg/
cm2でホツトプレスした後の生成した2珪化モリブ
デン(MoSi2)と3珪化5モリブデン(Mo5Si3
の比率を示したものである。ただし、この比率は
X線回析のMoSi2とMo5Si3との最も強いピーク
{MoSi2(dA=2.02)Mo5Si3(dA=2.156)}の高さ
の比であり、本当のモル比率ではない。アルミナ
とマグネシアのスピネル(MgAl2O4)は、焼結
助剤として少量添加したものであり、Mo金属
18.7モル%、Si金属37.5モル%、Si3N443.8モル%
の比率は焼成後MoSi230モル%、Si3N470モル%
の比率に相当する。第2図より、MoSi2とSi3N4
の混合物をホツトプレスすると窒素中では大部分
Mo5Si3が生成されるのに対し、アルゴン中では
大部分MoSi2のままで存在することが判明する。
また、出発原料としてMoSi2100%にした場合は
N2中でもMo5Si3の生成はほとんどおこらない。
また、焼結助剤の影響は本現象にはほとんど無い
ことがわかる。また、MoSi2の原料であるMo金
属とSi金属を出発原料としSi3N4を添加した場合
も、N2中ではMo5Si3を生成し、Ar中ではMoSi2
を生成する。以上のことからMoSi2がMo5Si3
変化する反応には窒素の寄与が非常に大きく、且
つ珪素の存在により本反応は著しく促進されるこ
とが確認された。MoSi2100%の場合、上記反応
はN2中でもほとんどおこらないため、MoSi2
Mo5Si3へのN2存在下での変換はMoSi2とSi3N4
混合体において特徴的であると考えられる。モリ
ブデン珪化物が耐酸化性にすぐれるのは、酸化雰
囲気で加熱された場合、表面層にSiO2の被膜を
形成し、その被膜により内部への酸化の進行を防
止するためである。この酸化被膜はSi含有量が関
係し、Si含有量が少ないものはSiO2の生成が少
ないため耐酸化性は低くなる。MoSi2とMo5Si3
とを比較すると、Si量の比率はMoSi2の方がMo5
Si3に比べかなり高く、そのため耐酸化性に優れ
る。従つて、耐酸化性を考慮すればできるだけ
Mo5Si3の変換をなくすように発熱体を製作する
必要がある。 第2図には、窒素分圧を徐々に上昇させ、
MoSi2のMo5Si3への変換の様子を示したデータ
も合わせてある(I〜K)。窒素分圧の上昇と共
にMo5Si3への変換は進行する。 第1図は第2図の条件で製作した発熱体を第1
図に示した試料寸法に研摩し、通電加熱耐久した
後の抵抗の変化を示したものである。各々の試料
は通電することで直径2mmの細い部分が1400℃に
なるように加熱し、100Hr連続耐久した。第1図
はその耐久後の抵抗値と初期抵抗との比率を示し
たもので、1.0であれば抵抗変化が無かつたこと
になる。Mo5Si3の場合(試料B)、MoSi2(試料
A,G)に比べ抵抗値は増加する。また、窒素分
圧を変化させた場合も、N2分圧0.3気圧の条件で
製作した試料Kのあたりから抵抗の増加がみられ
る。 表2は第1図で用いた試料の温度に対する抵抗
の増加率を示したものである。各々の試料の1000
℃の抵抗値と常温の抵抗値の比を示した。Mo5
Si3の比が増加するにつれ抵抗の増加率は減少す
る。発熱体の抵抗値を検出しこれをフイードバツ
クして発熱体温度を制御するシステムでは抵抗温
度係数は大きい程よく、その制御限界は(1000℃
のR/常温のR)で2.3程度である。以上のこと
よりMoSi2とSi3N4との混合焼結体よりなる発熱
体は、窒素分圧0.3気圧以下の非酸化雰囲気で製
造する必要があることが判明した。なお、窒素を
含まない非酸化雰囲気であるヘリウム、および真
空雰囲気下でもアルゴンと同様、MoSi2の分解防
止には有効であることが確認されている。本実施
例では焼結助剤としてMgAl2O4を使用したが、
他にアルミナ(Al2O3)あるいはアルミナとマグ
ネシア(MgO)との混合物などを使用してもよ
い。また本実施例では、例えばN2分圧0.2気圧、
Ar分圧0.8気圧の計1気圧の雰囲気で焼結した
が、N2分圧0.2気圧、Ar分圧9.8気圧の計10気圧
下のような高圧下で焼成してもかまわない。ただ
し、N2分圧はその場合も0.3気圧以下である。 表3にMoSi2とSi3N4とを種々の割合で混合し、
有機溶剤を加えて製作したシートをアルゴンガス
中で1600℃×1Hr、500Kg/cm2の条件でホツトプ
レスしたものの特性値を示す。抗折強度は1300℃
での3点曲げ試料が破壊もしくは変形したときの
荷重であり、抗折強度試験は40×3×4mmに切出
した試料をクロスヘツド速度0.5mm/minにして
行なつた。熱膨張係数は室温〜800℃の平均熱膨
張係数である。表3よりMoSi2にSi3N4を添加す
ることで熱膨張係数が減少し且つ強度も増加する
ことが確認された。熱衝撃性は熱膨張係数が小さ
い程、また破壊強度即ち抗折強度が大きい程良好
になる。従つて本実施例により得られた発熱体
は、MoSi2のすぐれた耐酸化性能を維持し、且つ
MoSi2単独で構成した発熱体の最大の欠点である
熱衝撃性に弱いという欠点を見事に解決した発熱
体である。グロープラグのような車載用ヒータと
して使用する場合の発熱体の抵抗値は、常温で1
×10-3〜1×10-1Ωcmの範囲であり、表3より
MoSi2の量は5〜50モル%の範囲となる。なお、
窒化珪素の添加については、単に熱膨張係数を低
下するだけであれば、窒化珪素以外にもコージエ
ライトなどの添加が考えられるが、窒化珪素はセ
ラミツクの中で最も強度的に優れる構造材であ
り、従つて強度の向上に最も有効であり、また
MoSi2の焼成条件として1600℃前後が最適である
ため、融点が低い物質は多量に添加することがで
きない。なお、本実施例の中でも述べているが、
窒素を含まない非酸化雰囲気中で焼成しても少量
のMo5Si3は生成するが、大部分はMoSi2の状態
であり、その量を規定する範囲として1000℃の抵
抗値が常温の抵抗値の2.3倍以上になるものを本
実施例の発熱体とした。また、MoSi2,Si3N4
他に焼結助剤を加える場合もあるが、窒化珪素の
添加効果を阻害しない範囲でならその添加はかま
わない。また、MoSi2,Si3N4の他にSi金属を過
剰に加える場合も過剰Si金属の量が数%程度であ
れば、それほど耐酸化性能を劣化させないため、
かまわない。実施例の中では、MoSi2を形成する
原料としてSi金属とMo金属を用いたが、それ以
外でもMoSi2を形成する原料があれば、それを出
発原料としてもかまわない。なお、本発明を述べ
た温度はパイロメータで計測した値で放射率
(ε)=1.00としての値である。なお、MoSi2とSi3
N4の混合焼結体は、窒素を含まない非酸化雰囲
気、又は、窒素分圧が0.3気圧以下の非酸化雰囲
気で焼成してはじめてできるものであり、この条
件以上の窒素の存在下ではMo5Si3を大量に生成
し、耐酸化性能を劣化させ、抵抗温度係数を低下
させる。100%MoSi2の場合は、このような反応
がないため、この反応はMoSi2とSi3N4との混合
体において特に顕著にあらわれる。そして、上記
の条件下で製造することにより、1000℃における
抵抗値が常温の抵抗値の2.3倍以上となる。
The present invention relates to a method for manufacturing a conductive ceramic heater that has excellent oxidation resistance, good thermal shock resistance, high-temperature strength, and a large temperature coefficient of resistance, and can be used, for example, as a heating element for a glow plug. Conventionally, heat-resistant alloys such as nickel-chromium alloys and iron-chromium-aluminum alloys have been used as heating elements in the case of metals, and silicon carbide, molybdenum silicide, etc. have been used in the case of ceramics. However, in the case of metal heating elements, the operating temperature is
The temperature limit is about 1000 to 1100°C, and at higher temperatures, oxidation corrosion, melting, etc. occur, making it unusable. Silicon carbide (SiC) can be used up to 1,600°C, and molybdenum silicide (MoSi 2 ) can be used up to about 1,800°C, but silicon carbide has an extremely high resistivity, so miniaturization is a problem, and molybdenum silicide can be used up to 1,300°C. As a result, it began to soften, causing problems in terms of high temperature strength and thermal shock resistance, and could not meet the required specifications for, for example, glow plugs for automobiles. SUMMARY OF THE INVENTION An object of the present invention is to utilize the extremely excellent heat resistance of molybdenum disilicide, eliminate the disadvantage of being susceptible to thermal shock, and provide a method for manufacturing a ceramic heater having a large temperature coefficient of resistance. The details of the present invention will be explained below based on experimental examples. Oxidation tests were conducted on various high-temperature materials shown in Table 1 in an electric furnace at 1000°C for 15 hours. The weight change rate and initial resistivity before testing of each material are shown in the same figure. The samples used were material powders that were sintered to a density of 90% or more of the theoretical density using hot pressing, and each sample was cut into the same shape.The rate of weight change was determined by washing the samples with acetone after the test and measuring the weight change. I asked. Note that a commercially available Ni-Cr material was used. From Table 1, it can be seen that SiC and MoSi 2 have extremely good oxidation resistance, while other materials are considerably oxidized. However, SiC has a very high initial resistivity, making it extremely difficult to apply it to small heating elements such as glow plugs that are operated by a low-voltage power source. In Table 1, the reason why the weight change rate of ZrB 2 is negative is recognized to be because the oxidized portion was peeled off during the acetone cleaning. From the above, MoSi 2 is the most excellent heater material in terms of oxidation resistance and specific resistance, but it has the disadvantage of being significantly inferior in thermal shock resistance and softening in the high temperature range of 1000°C or higher. In order to improve this drawback, the inventors invented a method for manufacturing a ceramic heater made of molybdenum disilicide and silicon nitride. However, there are manufacturing constraints in obtaining a mixed sintered body of MoSi 2 and Si 3 N 4 , and in particular, it is important to note that the mixture of MoSi 2 and Si 3 N 4 is strongly affected by the atmosphere during firing. discovered. Figure 2 explains the effect. Figure 2 shows that the starting materials listed in Figure 2 are mixed with a plurality of organic solvents, and a sheet formed by the doctor blade method is laminated.
1600℃×1Hr, 500Kg/in each atmosphere shown in the figure
Molybdenum disilicide (MoSi 2 ) and molybdenum trisilicide (Mo 5 Si 3 ) produced after hot pressing at cm 2
This shows the ratio of However, this ratio is the ratio of the heights of the strongest peaks of MoSi 2 and Mo 5 Si 3 in X-ray diffraction {MoSi 2 (dA=2.02) Mo 5 Si 3 (dA=2.156)}, and is the true It's not a molar ratio. Alumina and magnesia spinel (MgAl 2 O 4 ) is added in small amounts as a sintering aid, and Mo metal
18.7 mol%, Si metal 37.5 mol%, Si 3 N 4 43.8 mol%
After firing, the ratio is MoSi 2 30 mol%, Si 3 N 4 70 mol%
corresponds to the ratio of From Figure 2, MoSi 2 and Si 3 N 4
When hot pressing a mixture of
It turns out that Mo 5 Si 3 is generated, whereas in argon, most of it remains as MoSi 2 .
In addition, when using 100% MoSi 2 as the starting material,
Mo 5 Si 3 is hardly generated even in N 2 .
Furthermore, it can be seen that the sintering aid has almost no effect on this phenomenon. Furthermore, when Si 3 N 4 is added to the starting materials Mo metal and Si metal, which are the raw materials for MoSi 2 , Mo 5 Si 3 is generated in N 2 and MoSi 2 is generated in Ar.
generate. From the above, it was confirmed that the contribution of nitrogen to the reaction in which MoSi 2 changes to Mo 5 Si 3 is very large, and that this reaction is significantly accelerated by the presence of silicon. In the case of 100% MoSi 2 , the above reaction hardly occurs even in N 2 , so the
The conversion to Mo 5 Si 3 in the presence of N 2 is considered to be characteristic in the mixture of MoSi 2 and Si 3 N 4 . The reason why molybdenum silicide has excellent oxidation resistance is that when heated in an oxidizing atmosphere, a SiO 2 film is formed on the surface layer, and this film prevents oxidation from progressing to the inside. This oxide film is related to the Si content, and those with a low Si content have low oxidation resistance because less SiO 2 is generated. MoSi2 and Mo5Si3
When compared with MoSi2 , the ratio of Si amount is higher than that of Mo5
It is considerably higher than Si 3 and therefore has excellent oxidation resistance. Therefore, considering oxidation resistance,
It is necessary to manufacture the heating element so as to eliminate the conversion of Mo 5 Si 3 . Figure 2 shows that by gradually increasing the nitrogen partial pressure,
Data showing the conversion of MoSi 2 to Mo 5 Si 3 is also included (I to K). Conversion to Mo 5 Si 3 progresses as the nitrogen partial pressure increases. Figure 1 shows the heating element manufactured under the conditions shown in Figure 2.
This figure shows the change in resistance after the sample was polished to the dimensions shown in the figure and subjected to electrical heating. Each sample was heated to a temperature of 1400°C in a thin part with a diameter of 2 mm by applying electricity, and was continuously used for 100 hours. Figure 1 shows the ratio between the resistance value after durability and the initial resistance, and if it is 1.0, there is no change in resistance. In the case of Mo 5 Si 3 (Sample B), the resistance value increases compared to MoSi 2 (Samples A and G). Furthermore, even when the nitrogen partial pressure is changed, an increase in resistance is observed starting from around sample K, which was manufactured under the condition of N 2 partial pressure of 0.3 atm. Table 2 shows the rate of increase in resistance of the samples used in FIG. 1 with respect to temperature. 1000 of each sample
The ratio between the resistance value at °C and the resistance value at room temperature is shown. Mo 5
As the ratio of Si 3 increases, the rate of increase in resistance decreases. In a system that detects the resistance value of the heating element and feeds it back to control the temperature of the heating element, the higher the resistance temperature coefficient, the better; the control limit is (1000℃).
R at room temperature/R at room temperature) is about 2.3. From the above, it has been found that a heating element made of a mixed sintered body of MoSi 2 and Si 3 N 4 needs to be manufactured in a non-oxidizing atmosphere with a nitrogen partial pressure of 0.3 atmospheres or less. It has been confirmed that helium, which is a non-oxidizing atmosphere that does not contain nitrogen, and argon are effective in preventing the decomposition of MoSi 2 even in a vacuum atmosphere. In this example, MgAl 2 O 4 was used as a sintering aid, but
Alternatively, alumina (Al 2 O 3 ) or a mixture of alumina and magnesia (MgO) may be used. In addition, in this example, for example, N2 partial pressure is 0.2 atm,
Although sintering was performed in an atmosphere with a partial pressure of Ar of 0.8 atm and a total pressure of 1 atm, it is also possible to sinter under a high pressure such as under a partial pressure of N 2 of 0.2 atm and a partial pressure of Ar of 9.8 atm, a total of 10 atm. However, the N2 partial pressure is still below 0.3 atmospheres in that case. Table 3 shows MoSi 2 and Si 3 N 4 mixed in various proportions,
The characteristic values are shown for a sheet made by adding an organic solvent and hot pressed in argon gas at 1600°C for 1 hour and 500kg/cm 2 . The bending strength is 1300℃
This is the load at which a three-point bending sample breaks or deforms.The bending strength test was carried out using a sample cut into a size of 40 x 3 x 4 mm at a crosshead speed of 0.5 mm/min. The coefficient of thermal expansion is the average coefficient of thermal expansion from room temperature to 800°C. From Table 3, it was confirmed that by adding Si 3 N 4 to MoSi 2 , the coefficient of thermal expansion decreased and the strength increased. Thermal shock resistance becomes better as the coefficient of thermal expansion becomes smaller and as the breaking strength, that is, the bending strength becomes larger. Therefore, the heating element obtained in this example maintains the excellent oxidation resistance of MoSi2 , and
This heating element successfully solves the biggest drawback of heating elements composed of MoSi 2 alone, which is that they are susceptible to thermal shock. When used as a car heater such as a glow plug, the resistance value of the heating element is 1 at room temperature.
It is in the range of ×10 -3 to 1 × 10 -1 Ωcm, and from Table 3
The amount of MoSi2 will range from 5 to 50 mol%. In addition,
Regarding the addition of silicon nitride, if the purpose is simply to lower the coefficient of thermal expansion, it is possible to add cordierite in addition to silicon nitride, but silicon nitride is a structural material with the highest strength among ceramics. Therefore, it is the most effective for improving strength, and
Since the optimal firing condition for MoSi 2 is around 1600°C, it is not possible to add a large amount of a substance with a low melting point. Furthermore, as mentioned in this example,
Although a small amount of Mo 5 Si 3 is generated even if fired in a non-oxidizing atmosphere that does not contain nitrogen, most of it is in the state of MoSi 2 , and the resistance value at 1000°C is the resistance value at room temperature. The heating element of this example was one that was 2.3 times or more the value. Further, a sintering aid may be added in addition to MoSi 2 and Si 3 N 4 , but the addition may be made as long as it does not impede the effect of adding silicon nitride. In addition, when adding excessive Si metal in addition to MoSi 2 and Si 3 N 4 , as long as the amount of excess Si metal is only a few percent, the oxidation resistance performance will not deteriorate significantly.
I don't mind. In the examples, Si metal and Mo metal were used as raw materials for forming MoSi 2 , but if there are other raw materials for forming MoSi 2 , they may be used as starting materials. Note that the temperature described in the present invention is a value measured with a pyrometer and is a value assuming emissivity (ε)=1.00. Furthermore, MoSi 2 and Si 3
A mixed sintered body of N4 can only be produced by firing in a non-oxidizing atmosphere that does not contain nitrogen or a non-oxidizing atmosphere with a nitrogen partial pressure of 0.3 atm or less; in the presence of nitrogen above this condition, Mo. 5 Generates a large amount of Si 3 , which deteriorates oxidation resistance and lowers the temperature coefficient of resistance. Since there is no such reaction in the case of 100% MoSi 2 , this reaction is particularly noticeable in a mixture of MoSi 2 and Si 3 N 4 . By manufacturing under the above conditions, the resistance value at 1000°C is 2.3 times or more the resistance value at room temperature.

【表】【table】

【表】【table】

【表】 以上述べたごとく、本発明によれば、2珪化モ
リブデンの極めて優れた耐熱性を利用できるとと
もに窒化珪素の極めて優れた熱衝撃性を利用で
き、かつ抵抗温度係数が大きいセラミツクヒータ
を提供することができるという優れた効果を奏す
る。
[Table] As described above, the present invention provides a ceramic heater that can utilize the extremely excellent heat resistance of molybdenum disilicide, the extremely excellent thermal shock resistance of silicon nitride, and has a large temperature coefficient of resistance. It has the excellent effect of being able to

【図面の簡単な説明】[Brief explanation of drawings]

第1図は第2図の条件で作製した各発熱体A〜
Kを第1図中に示した寸法に研磨後、通電加熱耐
久試験した後の抵抗変化比率を示す特性図、第2
図は第1図中に示した各発熱体試料A〜Kの作製
条件を説明するための図である。
Figure 1 shows each heating element A~ produced under the conditions shown in Figure 2.
Characteristic diagram showing the resistance change ratio after polishing K to the dimensions shown in Fig. 1 and conducting an electric heating durability test, Fig. 2
The figure is a diagram for explaining the manufacturing conditions of each of the heating element samples A to K shown in FIG. 1.

Claims (1)

【特許請求の範囲】[Claims] 1 2珪化モリブデンと窒化珪素とを少なくとも
含有し、かつその2珪化モリブデンと窒化珪素と
の2成分系において2珪化モリブデンの占める割
合を5〜50モル%とした材料を、窒素を含まない
非酸化雰囲気中、又は、窒素を含んだ非酸化雰囲
気であつて窒素分圧が0.3気圧以下にて焼成する
ことを特徴とするセラミツクヒータの製造方法。
1. A material containing at least molybdenum disilicide and silicon nitride, and in which molybdenum disilicide accounts for 5 to 50 mol% in the binary system of molybdenum disilicide and silicon nitride, is made into a non-oxidized material that does not contain nitrogen. 1. A method for manufacturing a ceramic heater, characterized in that firing is performed in an atmosphere or in a non-oxidizing atmosphere containing nitrogen at a nitrogen partial pressure of 0.3 atmospheres or less.
JP58136382A 1983-07-25 1983-07-25 Ceramic heater Granted JPS6028194A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58136382A JPS6028194A (en) 1983-07-25 1983-07-25 Ceramic heater

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58136382A JPS6028194A (en) 1983-07-25 1983-07-25 Ceramic heater

Publications (2)

Publication Number Publication Date
JPS6028194A JPS6028194A (en) 1985-02-13
JPH044715B2 true JPH044715B2 (en) 1992-01-29

Family

ID=15173843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58136382A Granted JPS6028194A (en) 1983-07-25 1983-07-25 Ceramic heater

Country Status (1)

Country Link
JP (1) JPS6028194A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6182596A (en) * 1985-02-04 1986-04-26 Showa Electric Wire & Cable Co Ltd Separator circuit of interpolation multiple signal
JPS6282685A (en) * 1985-10-04 1987-04-16 株式会社デンソー Ceramic heating element for heater
JP2545970B2 (en) * 1988-03-29 1996-10-23 日本電装株式会社 Conductive ceramic heater, method of manufacturing the conductive ceramic heater, and self-controlled glow plug having the conductive ceramic heater
JP3411498B2 (en) * 1997-04-23 2003-06-03 日本特殊陶業株式会社 Ceramic heater, method of manufacturing the same, and ceramic glow plug
DE19722321A1 (en) * 1997-05-28 1998-12-03 Bosch Gmbh Robert Process for the production of moldings from a ceramic composite structure
JP3839174B2 (en) * 1998-01-30 2006-11-01 日本特殊陶業株式会社 Manufacturing method of ceramic heater

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59146184A (en) * 1983-02-08 1984-08-21 株式会社デンソー Ceramic heater

Also Published As

Publication number Publication date
JPS6028194A (en) 1985-02-13

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