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JPH0448113B2 - - Google Patents
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JPH0448113B2 - - Google Patents

Info

Publication number
JPH0448113B2
JPH0448113B2 JP59255301A JP25530184A JPH0448113B2 JP H0448113 B2 JPH0448113 B2 JP H0448113B2 JP 59255301 A JP59255301 A JP 59255301A JP 25530184 A JP25530184 A JP 25530184A JP H0448113 B2 JPH0448113 B2 JP H0448113B2
Authority
JP
Japan
Prior art keywords
layer
recording
recording layer
energy
interference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59255301A
Other languages
Japanese (ja)
Other versions
JPS61134294A (en
Inventor
Ryuji Watanabe
Tetsuo Minemura
Tetsuo Ito
Hisashi Ando
Yoshihira Maeda
Shoichi Nagai
Seiki Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59255301A priority Critical patent/JPS61134294A/en
Priority to US06/801,950 priority patent/US4651172A/en
Priority to CA000496335A priority patent/CA1238489A/en
Priority to DE8585308665T priority patent/DE3583599D1/en
Priority to EP85308665A priority patent/EP0186329B1/en
Priority to KR1019850008929A priority patent/KR920001263B1/en
Publication of JPS61134294A publication Critical patent/JPS61134294A/en
Publication of JPH0448113B2 publication Critical patent/JPH0448113B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25706Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25708Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 13 elements (B, Al, Ga)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25715Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0045Recording
    • G11B7/00454Recording involving phase-change effects

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は新規な情報記録再生装置用記録媒体を
用いた情報の記録・消去方法に係り、特に光・熱
エネルギーが与えられることにより合金の結晶構
造の変化にともなう分光反射率変化を利用した情
報記録再生装置を用いた情報の記録・消去方法に
関する。
[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a method for recording and erasing information using a new recording medium for an information recording/reproducing device, and in particular, the present invention relates to a method for recording and erasing information using a recording medium for an information recording/reproducing device. The present invention relates to a method for recording and erasing information using an information recording/reproducing device that utilizes changes in spectral reflectance due to changes in structure.

〔発明の背景〕[Background of the invention]

近年、情報記録の高密度化、デジタル化が進む
につれて種々の情報記録再生方式の開発が進めら
れている。特にレーザの光エネルギーを情報の記
録・消去、再生に利用した光デイスクは工業レア
メタルNo.80,1983(光デイスクと材料)に記載さ
れているように磁気デイスクに比べ、高い記録密
度が可能であり、今後の情報記録の有力な方式で
ある。このうち、レーザによる再生装置はコンパ
クト・デイスク(CD)として実用化されている。
一方、記録可能な方式には追記型と書き換え可能
型の大きく2つに分けられる。前者は1回の書き
込みのみが可能であり、消去はできない。後者は
くり返しの記録・消去が可能な方式である。追記
型の記録方法はレーザ光により記録部分の媒体を
破壊あるいは成形して凹凸をつけ、再生にはこの
凹凸部分でのレーザ光の干渉による光反射量の変
化を利用する。この記録媒体にはTeやその合金
を利用して、その溶解、昇華による凹凸の成形が
一般的に知られている。この種の媒体では毒性な
ど若干の問題を含んでいる。書き換え可能型の記
録媒体としては光磁気材料が主流である。この方
法は光エネルギーを利用してキユリー点あるいは
補償点温度付近で媒体の局部的な磁気異方性を反
転させ記録し、その部分での偏光入射光の磁気フ
アラデー効果及び磁気力−効果による偏光面の回
転量にて再生する。この方法は書き換え可能型の
最も有望なものとして数年後の実用化を目指し精
力的な研究開発が進められている。しかし、現在
のところ偏光面の回転量の大きな材料がなく多層
膜化などの種々の工夫をしてもS/N,C/Nな
どの出力レベルが小さいという大きな問題があ
る。その他の書き換え可能型方式として記録媒体
の非晶質と結晶質の可逆的相変化による反射率変
化を利用したものがある。例えばNational
Technical Report Vol29No.5(1983)に記載
TeOxに少量のGeおよびSnを添加した合金があ
る。
In recent years, as information recording becomes more dense and digital, various information recording and reproducing methods are being developed. In particular, optical disks that use laser light energy to record, erase, and reproduce information are capable of higher recording densities than magnetic disks, as stated in Industrial Rare Metal No. 80, 1983 (Optical Disks and Materials). This is a promising method for recording information in the future. Among these, laser playback devices have been put into practical use as compact discs (CDs).
On the other hand, recordable methods can be broadly divided into two types: write-once type and rewritable type. The former can only be written once and cannot be erased. The latter is a method that allows repeated recording and erasing. In the write-once type recording method, a laser beam is used to destroy or shape the recording portion of the medium to create unevenness, and for reproduction, a change in the amount of light reflected due to the interference of the laser beam at the uneven portion is used for reproduction. For this recording medium, it is generally known that Te or its alloy is used to form irregularities by melting and sublimating it. This type of medium has some problems such as toxicity. Magneto-optical materials are the mainstream for rewritable recording media. This method uses optical energy to invert and record the local magnetic anisotropy of the medium near the Curie point or compensation point temperature, and the polarized incident light is polarized at that part due to the magnetic Faraday effect and magnetic force effect. Play based on the amount of rotation of the surface. This method is considered to be the most promising rewritable method, and active research and development is underway with the aim of putting it into practical use in the next few years. However, there is currently no material with a large amount of rotation of the plane of polarization, and even with various efforts such as multilayer film formation, there is a major problem in that output levels such as S/N and C/N are low. Other rewritable systems utilize reflectance changes due to reversible phase changes between amorphous and crystalline recording media. For example, National
Described in Technical Report Vol. 29 No. 5 (1983)
There is an alloy in which small amounts of Ge and Sn are added to TeOx.

しかし、この方式は非晶質相の結晶化温が低
く、常温における相の不安定さがデイクの信頼性
に結びつく大きな問題点である。
However, this method has a major problem in that the crystallization temperature of the amorphous phase is low and the instability of the phase at room temperature is linked to the reliability of Dake.

一方、色調変化を利用した合金として、特開昭
57−140845がある。この合金は(12〜15)wt%
Al−(1〜5)wt%Ni−残Cuよりなる合金でマ
ルテンサイト変態温度を境にして、赤から黄金色
に可逆的に変化することを利用したものである。
マルテンサイト変態は温度の低下にともなつて必
然的に生ずる変態のため、マルテンサイト変態温
度以上に保持した状態で得られる色調はマルテン
サイト変調温度以下にもつてくることはできな
い。また逆にマルテンサイト変態温度以下で得ら
れる色調のものをマルテンサイト変態温度以上に
すると、変態をおこして別の色調に変化してしま
う。したがつて、マルテンサイト変態の上下でお
こる2つの色調は同一温度で同時に得ることはで
きない。したがつてこの原理では記録材料として
適用することはできない。
On the other hand, as an alloy that utilizes color tone change,
There is 57−140845. This alloy is (12-15) wt%
It is an alloy consisting of Al-(1 to 5)wt% Ni-remaining Cu, and takes advantage of the fact that it changes reversibly from red to gold at the martensitic transformation temperature.
Martensitic transformation is a transformation that inevitably occurs as the temperature decreases, so the color tone obtained when the temperature is maintained above the martensitic transformation temperature cannot be maintained below the martensitic modulation temperature. Conversely, if a color tone obtained at a temperature below the martensitic transformation temperature is heated above the martensitic transformation temperature, the color tone will undergo transformation and change to a different color tone. Therefore, the two color tones occurring above and below the martensitic transformation cannot be obtained simultaneously at the same temperature. Therefore, this principle cannot be applied as a recording material.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、エネルギー入射効率の高い結
晶と結晶との間の相変化を利用した記録層を備え
た情報記録媒体を用いた情報の記録・消去方法を
提供するにある。
An object of the present invention is to provide a method for recording and erasing information using an information recording medium equipped with a recording layer that utilizes a phase change between crystals with high energy incidence efficiency.

〔発明の概要〕[Summary of the invention]

(発明の要点) 本発明は、合金からなる記録層と該記録層の表
面反射率を低減する層とを有する光記録媒体に、
光エネルギーを照射し前記記録層を加熱すること
によつて、情報を記録し、又は消去する方法であ
つて、前記光エネルギーを前記記録層の表面反射
率を低減する層を通して前記記録層に入射し、高
温相温度領域まで加熱し急冷することによつて形
成される第一の結晶と、低温相温度領域で加熱し
冷却することによつて形成され、金属間化合物を
有する前記第一の結晶と異なる第二の結晶との間
で記録層を可逆的に相変化させ、前記記録層を形
成する合金の反射率を変化させることによつて情
報を記録し、又は消去することを特徴とする。
(Summary of the Invention) The present invention provides an optical recording medium having a recording layer made of an alloy and a layer that reduces the surface reflectance of the recording layer.
A method of recording or erasing information by irradiating light energy and heating the recording layer, the light energy being incident on the recording layer through a layer that reduces the surface reflectance of the recording layer. a first crystal formed by heating to a high phase temperature region and rapidly cooling; and the first crystal formed by heating and cooling to a low phase temperature region and having an intermetallic compound. Information is recorded or erased by reversibly changing the phase of the recording layer with a second crystal different from the recording layer and changing the reflectance of the alloy forming the recording layer. .

記録層の表面反射率を低減する層としては、吸
収層及び干渉層の少なくとも一方を用いることが
好ましい。
As the layer for reducing the surface reflectance of the recording layer, it is preferable to use at least one of an absorption layer and an interference layer.

何らかの手段により、情報記録媒体からの反射
エネルギーを少なくできれば、記録層に入力する
熱量が増加し、記録層の温度が急速に上昇し、高
速書込が可能となるとともに、より少ない入射エ
ネルギーで書込み又は消去が可能となるため、情
報記録再生媒体の書込み感度又は消去感度が高く
なる。
If the reflected energy from the information recording medium can be reduced by some means, the amount of heat input to the recording layer will increase, the temperature of the recording layer will rise rapidly, and high-speed writing will be possible, as well as writing with less incident energy. Alternatively, since erasing becomes possible, the writing sensitivity or erasing sensitivity of the information recording/reproducing medium increases.

(吸収層、干渉層) 第2図bに示す如く、記録層1の入射エネルギ
ー側に入射エネルギーを吸収する物質からなる吸
収層3を設けると、入射エネルギーの多くの部分
が、吸収層3において吸収されて熱エネルギーに
変化し、吸収層3の温度が急激に上昇する。その
結果、吸収層3から記録層1へ多くの熱エネルギ
ーが熱伝導により伝達され、記録層1の温度も、
吸収層3のない場合に比較して、急速にかつ高温
度まで上昇する。この吸収層3の厚さとしては情
報記録再生媒体の表面反射率(反射エネルギー/
入射エネルギーの比)が、5%〜80%となるよう
な厚さが望ましい。反射率が5%未満になると、
反射光の強度が小さくなるため、記録部分と未記
録部分の反射光強度を比較して記録信号を読取る
記録信号再生時の信号対雑音比(S/N比)が劣
下してしまい不利である。また反射率が、80%を
越えると入射エネルギーの多くが、吸収層3にお
いて熱エネルギーに変わることなく反射されてし
まうため、吸収層3の温度が上がらなくなる。そ
の結果、記録層1への熱エネルギーの伝達がほと
んどなくなり、情報記録再生媒体の書込感度又は
消去感度の増加は期待できない。吸収層として電
磁波(例えば、レーザ光・光)を熱エネルギーに
変換するものである。
(Absorption Layer, Interference Layer) As shown in FIG. It is absorbed and changed into thermal energy, and the temperature of the absorption layer 3 rises rapidly. As a result, much thermal energy is transferred from the absorption layer 3 to the recording layer 1 by thermal conduction, and the temperature of the recording layer 1 also decreases.
The temperature rises rapidly and to a higher temperature than in the case without the absorption layer 3. The thickness of this absorption layer 3 is determined by the surface reflectance (reflected energy/
It is desirable that the thickness be such that the ratio of incident energy is 5% to 80%. When the reflectance is less than 5%,
Since the intensity of the reflected light decreases, the signal-to-noise ratio (S/N ratio) during playback of the recorded signal, in which the recorded signal is read by comparing the reflected light intensity of the recorded and unrecorded areas, deteriorates, which is disadvantageous. be. Furthermore, when the reflectance exceeds 80%, most of the incident energy is reflected by the absorption layer 3 without being converted into thermal energy, so that the temperature of the absorption layer 3 does not rise. As a result, almost no thermal energy is transmitted to the recording layer 1, and no increase in the writing sensitivity or erasing sensitivity of the information recording/reproducing medium can be expected. As an absorption layer, it converts electromagnetic waves (for example, laser light/light) into thermal energy.

情報記録再生媒体の表面反射率を低減する手段
として、入射エネルギーの干渉効果を利用する方
法がある。
One way to reduce the surface reflectance of an information recording/reproducing medium is to utilize the interference effect of incident energy.

酸化タンタル、アルミナ等の50%以上のエネル
ギー透過性の膜とするのが好ましい。その厚さは
50〜500nmが好ましく、無色が好ましい。たとえ
ば、第2図aのように記録層1のエネルギー入射
側に適当な厚さの無色透明な干渉層2を設ける
と、入射エネルギーの何割かは、この干渉層2の
表面で反射される。残りの入射エネルギーは、干
渉層2の内部まで入り込み、記録層1まで到達す
る。この到達した入射エネルギーの何割かは記録
層1の表面で反射されて、干渉層2を逆に通過し
て干渉層2の表面に到達する。この時、入射エネ
ルギーが電磁波のように波動性を有していると前
記の干渉層2の表面での反射エネルギーの波と、
記録層1の表面で反射してきたエネルギーの波が
干渉を起こす。前記2つのエネルギーの波の位相
がエネルギーの波の波長の半分だけずれていると
エネルギー波の山と谷の部分が相殺し合つて、エ
ネルギー波の振幅が、減少する。このことは、実
質的に情報記録再生媒体の表面から反射して返つ
てくるエネルギーが減少することを意味する。す
なわち、干渉層2の厚さを適切な値にすれば、エ
ネルギー反射率を下げることができる。この場
合、干渉層2部分での光の吸収はきわめて少ない
から、入射エネルギーから反射エネルギーを差し
引いた残りのエネルギーは全て記録層1で吸収さ
れ、記録層1の温度は干渉層2がない場合に比較
して、より急速に高温度にまで上昇する。
Preferably, the film is made of tantalum oxide, alumina, or the like and has an energy transmittance of 50% or more. Its thickness is
50 to 500 nm is preferable, and colorless is preferable. For example, if a colorless and transparent interference layer 2 of an appropriate thickness is provided on the energy incident side of the recording layer 1 as shown in FIG. The remaining incident energy penetrates into the interference layer 2 and reaches the recording layer 1. Some percentage of this incident energy is reflected by the surface of the recording layer 1, passes through the interference layer 2 in the opposite direction, and reaches the surface of the interference layer 2. At this time, if the incident energy has wave properties like electromagnetic waves, the reflected energy waves on the surface of the interference layer 2,
Energy waves reflected from the surface of the recording layer 1 cause interference. When the phases of the two energy waves are shifted by half the wavelength of the energy waves, the peaks and troughs of the energy waves cancel each other out, and the amplitude of the energy waves decreases. This means that the energy reflected back from the surface of the information recording/reproducing medium is substantially reduced. That is, by setting the thickness of the interference layer 2 to an appropriate value, the energy reflectance can be lowered. In this case, since the absorption of light in the interference layer 2 is extremely small, the remaining energy after subtracting the reflected energy from the incident energy is all absorbed by the recording layer 1, and the temperature of the recording layer 1 is the same as that without the interference layer 2. In comparison, it rises to high temperatures more rapidly.

前記の最適な干渉層の厚さは、干渉の理論によ
つて導かれる次式によつて定めることができる。
The optimal thickness of the interference layer can be determined by the following equation derived from the theory of interference.

d=λ/4n1(2m+1) …(1) (m=0,1,2,3…) ここで、 d:干渉層の厚さ、 n1:干渉層の屈折率 λ:エネルギー波の波長 又、干渉膜の屈折率の最適な値n1′は干渉の理
論から同様に導かれ次式で表わされる。
d=λ/4n 1 (2m+1) ...(1) (m=0, 1, 2, 3...) Here, d: Thickness of the interference layer, n 1 : Refractive index of the interference layer λ: Wavelength of the energy wave Further, the optimum value n 1 ' of the refractive index of the interference film is similarly derived from the theory of interference and is expressed by the following equation.

n1′=√2 ……(2) ここで、 n2:記録層1の屈折率 前記した反射率を低減させる層は、入射エネル
ギー吸収層又は干渉層として、単独の機能を有す
るものであつたが、1つの層に、干渉層としての
機能と、吸収層としての機能を同時に持たせるこ
とも可能である。
n 1 ′=√ 2 ...(2) where, n 2 : refractive index of recording layer 1 The layer that reduces the reflectance described above has an independent function as an incident energy absorption layer or an interference layer. However, it is also possible to provide one layer with the functions of an interference layer and an absorption layer at the same time.

吸収層としては酸化チタン、酸化クロム、酸化
銅、四三酸化鉄等の薄膜を使用することができ、
半透過性が好ましい。特に、着色されたもので、
黒体となつているものが好ましく、光に対して10
〜30%のエネルギー吸収性を有し、50%以下の透
過性を有するものが好ましい。厚さは50nm以下、
より好ましくは30〜50nmである。
As the absorption layer, a thin film of titanium oxide, chromium oxide, copper oxide, triiron tetroxide, etc. can be used.
Semi-transparent is preferred. Especially colored ones,
It is preferable to use a black body, which has a resistance of 10 to light.
Those with an energy absorption of ~30% and a transparency of 50% or less are preferred. Thickness is less than 50nm,
More preferably, it is 30 to 50 nm.

吸収層として着色を有するものを用いるときは
情報の記録側と反対側より再生するのがよい。
When using a colored absorption layer, it is preferable to reproduce information from the side opposite to the information recording side.

このような干渉・吸収層2′を第2図cの様に
記録層1のエネルギー入射側に形成すれば、記録
層1への熱エネルギーの入力は増大し、情報記録
再生媒体の記録感度を向上させることができる。
If such an interference/absorption layer 2' is formed on the energy incident side of the recording layer 1 as shown in FIG. can be improved.

これまで、述べてきた反射防止膜は全て一層構
造であつたが、第2図dの様に吸収層3と干渉層
2をそれぞれ別の層を用いる2層構造にすること
も可能である。
All of the antireflection films described so far have a single-layer structure, but it is also possible to have a two-layer structure using separate layers for the absorption layer 3 and the interference layer 2, as shown in FIG. 2d.

これまで、記録層1の前面に反射防止層を形成
し、実質的に記録層1に入力する熱エネルギーを
増加させることにより、記録層1の温度を急速に
かつ、高温度まで上昇させ得ることを述べてきた
が、さらに記録層の温度を増加させ得る手段があ
る。それは、第3図aのように記録層1を囲むよ
うに熱絶縁層5を形成する方法である。一般に記
録層は薄いためそれ自体では機械的強度が低いか
ら第3図cのように金属板、ガラス板、プラスチ
ツク板等の支持層7の上に形成することが多い。
このような構造の場合、記録層から支持層へ熱エ
ネルギーが流れて、支持層7が記録層1の冷却体
として働く。そのため、記録層1の温度が上がり
にくくなる。この熱エネルギーの流失を防止する
ためには、記録層と支持層の間に熱絶縁層5を設
けることが効果がある。又、熱エネルギーは記録
層から前記とは逆方向の支持層の反対側にも流れ
るから、この流失も防止すれば、より効果があ
る。記録層の上面に干渉層がある場合には、干渉
層と記録層を囲むように熱絶縁層を設ける。熱吸
収層が記録層の上面(エネルギー入射側)にある
場合には、熱吸収層からの熱エネルギーの流失を
防止するため、第3図aのように熱吸収層3のエ
ネルギー入射側に熱絶縁層5を設けることが効果
がある。
Until now, it has been possible to rapidly raise the temperature of the recording layer 1 to a high temperature by forming an antireflection layer on the front surface of the recording layer 1 and substantially increasing the thermal energy input to the recording layer 1. However, there is a means to further increase the temperature of the recording layer. This is a method of forming a thermal insulating layer 5 so as to surround the recording layer 1 as shown in FIG. 3a. Since the recording layer is generally thin and has low mechanical strength by itself, it is often formed on a support layer 7 such as a metal plate, glass plate, or plastic plate, as shown in FIG. 3c.
In such a structure, thermal energy flows from the recording layer to the support layer, and the support layer 7 acts as a cooling body for the recording layer 1. Therefore, the temperature of the recording layer 1 becomes difficult to rise. In order to prevent this loss of thermal energy, it is effective to provide a thermal insulating layer 5 between the recording layer and the support layer. Further, since thermal energy flows from the recording layer to the opposite side of the support layer in the opposite direction to that described above, it is more effective if this flow is also prevented. When an interference layer is provided on the upper surface of the recording layer, a thermal insulating layer is provided to surround the interference layer and the recording layer. When the heat absorption layer is on the upper surface (energy incidence side) of the recording layer, in order to prevent the loss of thermal energy from the heat absorption layer, heat is placed on the energy incidence side of the heat absorption layer 3 as shown in Figure 3a. Providing the insulating layer 5 is effective.

熱絶縁層は熱をしやへいするためのもので、
SiO2ガラス、アルミナ等の酸化物が好ましい。
Thermal insulation layer is for keeping heat out.
Oxides such as SiO 2 glass and alumina are preferred.

ところで、前記の記録層を支持する支持層は、
エネルギー入射側と反対側にあると考えたが、逆
にエネルギー入射側に支持層(基板)を設けるこ
とも可能である。このような構造の場合には、支
持層は入射エネルギーを透過する無色透明な膜、
例えば、ガラス板やプラスチツク板を用いる。と
ころでこのように記録層とエネルギー入射面の間
に、透明層を設けることは別の効果がある。すな
わち、情報記録媒体は外気にさらされるため、空
気中のちりが付着したり、人間の指紋が付着する
ことが多い。このような状態で、記録したデータ
を再生すると雑音が多くなり、S/N比が低下し
てしまう。しかし、第1図eのように0.5〜2.0mm
程度の透明層4が記録層の上面にあると、ちり
や、指紋は(記録層1から離れた)透明層4の表
面に付着する。情報記録再生媒体上の記録データ
を再生する装置は、顕微鏡と同様な光学系を持
ち、記録層の微小領域を観察し、記録層1の場所
による反射率の変化を観察して、記録データを再
生する。この時、光学系の焦点を記録層1に結ぶ
と、透明層4の表面のちりや、指紋は焦点深度の
範囲外になるため、ボケた像となり、再生信号に
悪影響を与えず、S/N比の低下もない。
By the way, the support layer that supports the recording layer is
Although the support layer (substrate) was considered to be on the side opposite to the energy incidence side, it is also possible to provide the support layer (substrate) on the energy incidence side. In such a structure, the support layer is a colorless transparent film that transmits incident energy;
For example, a glass plate or a plastic plate is used. By the way, providing a transparent layer between the recording layer and the energy incidence surface has another effect. That is, since information recording media are exposed to the outside air, dust in the air and human fingerprints often adhere to them. If recorded data is reproduced in such a state, noise will increase and the S/N ratio will decrease. However, as shown in Figure 1e, 0.5~2.0mm
If the transparent layer 4 is on the upper surface of the recording layer, dust and fingerprints will adhere to the surface of the transparent layer 4 (away from the recording layer 1). A device for reproducing recorded data on an information recording/reproducing medium has an optical system similar to a microscope, observes a minute area of the recording layer, observes changes in reflectance depending on the location of the recording layer 1, and reproduces the recorded data. Reproduce. At this time, when the optical system is focused on the recording layer 1, dust and fingerprints on the surface of the transparent layer 4 are out of the depth of focus range, resulting in a blurred image, which does not adversely affect the reproduced signal. There is no decrease in N ratio.

上記のように支持層が、記録層のエネルギー入
射側にある場合には、記録層の下面(エネルギー
入射面と反対側)に熱絶縁層を設け、空気中への
熱流失を防止する。又、干渉層又は吸収層として
熱絶縁性の高い物質を用いれば、膜構成を簡易化
できる。
When the support layer is on the energy incidence side of the recording layer as described above, a thermal insulation layer is provided on the lower surface of the recording layer (the side opposite to the energy incidence surface) to prevent heat loss into the air. Furthermore, if a material with high thermal insulation is used as the interference layer or absorption layer, the film structure can be simplified.

基板には、ガラス、セラミツクス、ポリメチル
メタクリレート、ポリスチレン、ポリカーボネー
ト等のプラスチツク等が使用される。これらの基
板は無色透明であるのが好ましい。
Glass, ceramics, plastics such as polymethyl methacrylate, polystyrene, polycarbonate, etc. are used for the substrate. These substrates are preferably colorless and transparent.

保護層6は記録層1の外部機器との接触によつ
て生ずるきずの形成を保護、記録層1上に付着す
るほこりから保護するもので、SiO2ガラス、ア
ルミナ等の酸化物が使用される。その厚さは数十
nm〜2mmが好ましい。
The protective layer 6 protects the recording layer 1 from scratches caused by contact with external equipment and protects the recording layer 1 from dust adhering to it, and is made of oxides such as SiO 2 glass and alumina. . Its thickness is tens of
It is preferably nm to 2 mm.

本発明の情報記録媒体は干渉層及び吸収層が設
けられた側にエネルギーを入射して記録再生又は
消去することができ、更に再生を干渉層及び吸収
層を設けた側とは反対側から行うことができる。
この反対側での再生に当つては基板を前述の無色
透明なものとすればよい。記録側と反対側での再
生に当つて光を使用する場合は記録層に対して無
色透明な基板、保護膜等の膜で光透過性の高いも
のを選ぶべきである。
The information recording medium of the present invention can record, reproduce, or erase information by inputting energy to the side where the interference layer and absorption layer are provided, and further performs reproduction from the side opposite to the side where the interference layer and absorption layer are provided. be able to.
For reproduction on the opposite side, the substrate may be the colorless and transparent substrate described above. When using light for reproduction on the side opposite to the recording side, a colorless and transparent substrate, protective film, or other film with high light transmittance should be selected for the recording layer.

(記録層) 本発明の記録層は、固体状態で室温より高い第
1の温度(高温)及び第1の温度より低い温度
(低温)状態で異なつた結晶構造を有し、前記高
温からの急冷によつて室温で平衡相である結晶構
造(第一の結晶)と第一の結晶と異なる結晶構造
(第二の結晶)とを有する金属又は合金が好まし
い。
(Recording layer) The recording layer of the present invention has different crystal structures in a solid state at a first temperature higher than room temperature (high temperature) and at a temperature lower than the first temperature (low temperature), A metal or an alloy having a crystal structure (first crystal) that is in an equilibrium phase at room temperature and a crystal structure (second crystal) different from the first crystal is preferable.

本発明に係る合金は高温の固相状態からの急冷
により同一温度で少なくとも2種の分光反射率を
有し、第一の結晶と第一の結晶と異なる第二の結
晶との相変化によつて可逆的に分光反射率を変え
ることのできるものである。すなわち、本発明に
係る合金は固相状態で少なくとも2つの温度領域
で結晶構造の異なつた相を有し、それらの内、高
温相を急冷した状態と非急冷の標準状態の低温相
状態とで分光反射率が異なり、高温相温度領域で
の加熱急冷と低温相温度領域での加熱冷却により
分光反射率が可逆的に変化するものである。
The alloy according to the present invention has at least two types of spectral reflectance at the same temperature due to rapid cooling from a high-temperature solid state, and due to a phase change between a first crystal and a second crystal different from the first crystal. Therefore, the spectral reflectance can be changed reversibly. That is, the alloy according to the present invention has phases with different crystal structures in at least two temperature ranges in a solid state, and among these, the high temperature phase is quenched and the low temperature phase is a standard non-quenched state. The spectral reflectance is different, and the spectral reflectance changes reversibly by heating and cooling in the high temperature phase region and heating and cooling in the low phase temperature region.

本発明の可逆的反射率の変化についてその原理
を第4図を用いて説明する。図はX−Y二元系合
金の状態図でありα固溶体とβ,γ金属間化合物
が存在する。A組成の合金を例にとると、この合
金は固相状態において、β単相、(β+γ)相及
び(α+γ)相がある。結晶構造はα,β,γの
それぞれ単相状態で異なり、これら単独及び混合
相においてそれぞれ光学的性質、たとえば分光反
射率は異なる。このような合金はT1温度、一般
的に室温であるが、(α+γ)相が安定である。
これをT4温度まで加熱急冷するとβ相がT1温度
まで急冷する。この状態は(α+γ)相とは異な
るため、分光反射率も異なつてくる。この急冷β
相合金をTe温度以下のT2温度まで加熱冷却する
とβ相は(α+γ)相に変態し、分光反射率は最
初の状態に戻る。このような2つの加熱冷却処理
を繰返すことにより、分光反射率を可逆的に変化
させることが可能である。
The principle of the reversible change in reflectance according to the present invention will be explained using FIG. 4. The figure is a phase diagram of an X-Y binary alloy, in which an α solid solution and β, γ intermetallic compounds exist. Taking an alloy with composition A as an example, this alloy has a β single phase, a (β+γ) phase, and an (α+γ) phase in a solid state. The crystal structure is different in the single phase state of α, β, and γ, and the optical properties, such as spectral reflectance, are different in each of these single phases and mixed phases. Such alloys have a stable (α+γ) phase at T 1 temperature, generally room temperature.
When this is heated and rapidly cooled to T4 temperature, the β phase is rapidly cooled to T1 temperature. Since this state is different from the (α+γ) phase, the spectral reflectance is also different. This rapid cooling β
When the phase alloy is heated and cooled to T 2 temperature, which is lower than T e temperature, the β phase transforms into the (α + γ) phase, and the spectral reflectance returns to its initial state. By repeating such two heating and cooling processes, it is possible to reversibly change the spectral reflectance.

本発明の記録層の合金例は次の通りである。 Examples of the alloy of the recording layer of the present invention are as follows.

銀を主成分とし、亜鉛30〜46wt%、アルミニ
ウム6〜10wt%の1種を含む合金、銅を主成分
とし、アルミニウム10〜20wt%、インジウム20
〜40wt%、錫16〜35wt%の1種を含む合金、金
を主成分とし、アルミニウム2.5〜5wt%を含む合
金、又はこれらの合金に少量の,b,b,
b,b,b,a,a族元素の1種以上
を含むことができる。その含有量は好ましくは
10wt%以下である。
Alloy containing silver as the main component, zinc 30-46wt%, aluminum 6-10wt%, copper as the main component, aluminum 10-20wt%, indium 20
~40wt%, tin 16~35wt%, alloys containing gold as a main component and aluminum 2.5~5wt%, or these alloys with small amounts of b, b,
It can contain one or more of group b, b, b, a, and a group elements. Its content is preferably
It is 10wt% or less.

記録密度として、20メガビツト/cm2以上となる
ような微小面積での情報の製作には0.01〜0.2μm
の膜厚とするのがよい。記録層として気相あるい
は液相から直接急冷固化させて所定の形状にする
ことが有効である。これらの方法にはPVD法
(蒸着、スパツタリング法等)、CVD法、溶湯を
高速回転する高熱伝導性を有する部材からなる、
特に金属ロール円周面上に注湯して急冷凝固させ
る溶湯急冷法、電気メツキ、化学メツキ法等があ
る。粉末状の材料を利用する場合、基板上に塗布
して基板上に接着することが効果的である。塗布
する場合、粉末を加熱しても反応などを起こさな
いバインダーがよい。また、加熱による材料の酸
化等を防止するため、材料表面、基板上に形成し
た膜あるいは塗布層表面をコーテイングすること
も有効である。
The recording density is 0.01 to 0.2 μm for producing information in a micro area with a recording density of 20 megabits/cm 2 or more.
It is preferable to set the film thickness to . It is effective to form the recording layer into a predetermined shape by directly rapidly cooling and solidifying it from the gas phase or liquid phase. These methods include PVD method (vapor deposition, sputtering method, etc.), CVD method, high thermal conductivity material that rotates molten metal at high speed,
Particularly, there are a molten metal quenching method in which molten metal is poured onto the circumferential surface of a metal roll and rapidly solidified, an electric plating method, a chemical plating method, and the like. When using a powdered material, it is effective to apply it onto a substrate and adhere it to the substrate. When applying, a binder that does not cause any reaction even when the powder is heated is preferred. Furthermore, in order to prevent oxidation of the material due to heating, it is also effective to coat the surface of the material, the film formed on the substrate, or the surface of the coating layer.

粉末は、溶湯を気体又は液体の冷媒とともに噴
霧させて水中に投入させて急冷するガイアトマイ
ズ法によつて形成させることが好ましい。その粒
径は0.1mm以下が好ましく、特に粒径1μm以下の
超微粉が好ましい。
The powder is preferably formed by a Gaia atomization method in which molten metal is sprayed together with a gaseous or liquid refrigerant and then poured into water to be rapidly cooled. The particle size is preferably 0.1 mm or less, and ultrafine powder with a particle size of 1 μm or less is particularly preferable.

膜は前述の如く蒸着、スパツタリング、CVD
電気メツキ、化学メツキ等によつて形成できる。
特に、0.1μm以下の膜厚を形成するにはスパツタ
リングが好ましい。スパツタリングは目標の合金
組成のコントロールが容易にできる。
The film was deposited by vapor deposition, sputtering, or CVD as described above.
It can be formed by electroplating, chemical plating, etc.
In particular, sputtering is preferable to form a film with a thickness of 0.1 μm or less. Sputtering allows easy control of the target alloy composition.

(用途) 本発明の情報記録媒体は、加熱急冷によつて部
分的又は全体に結晶構造の変化による電磁波の分
光反射率、電気抵抗率、屈折率、偏光率、透過率
等の物理的又は電気的特性を変化させ、これらの
特性の変化を利用して記録、表示、センサー等の
素子に使用することができる。
(Applications) The information recording medium of the present invention has physical or electrical properties such as spectral reflectance of electromagnetic waves, electrical resistivity, refractive index, polarization index, transmittance, etc. due to a change in the crystal structure partially or entirely by heating and quenching. It can be used for recording, display, sensor, etc. elements by changing the physical characteristics and utilizing the changes in these characteristics.

情報等の記録の手段として、電圧及び電流の形
での電気エネルギー、電磁波(可視光、輻射熱、
赤外線、紫外線、写真用閃光ランプの光、電子ビ
ーム、陽子線、アルゴンレーザ、半導体レーザ等
のレーザ光線、熱等)を用いることができ、特に
その照射による分光反射率の変化を利用した光デ
イスクに利用するのが好ましい。光デイスクに
は、デイジタルオーデイオデイスク(DAD又は
コンパクトデイスク)、ビデオデイスク、メモリ
ーデイスクなどがあり、これらに使用可能であ
る。本発明の記録媒体は再生専用型、追加記録
型、書換型デイスク装置にそれぞれ使用でき、特
に書換型デイスク装置においてきわめて有効であ
る。
Electrical energy in the form of voltage and current, electromagnetic waves (visible light, radiant heat,
Infrared rays, ultraviolet rays, photographic flash lamp light, electron beams, proton beams, argon lasers, laser beams such as semiconductor lasers, heat, etc.) can be used, and in particular optical disks that utilize changes in spectral reflectance due to irradiation. It is preferable to use it for Optical disks include digital audio disks (DAD or compact disks), video disks, memory disks, etc., and can be used for these. The recording medium of the present invention can be used in read-only type, additional recording type, and rewritable type disk devices, and is particularly effective in rewritable type disk devices.

消去しながら記録,消去専用にて全体を消去、
部分的に広域を消去する方法がある。
Record while erasing, erase the entire thing with erasing only,
There is a way to partially erase a wide area.

本発明を光デイスクの記録媒体に使用した場合
の記録及び再生の原理の例は次の通りである。先
ず、記録媒体を局部的に加熱し該加熱後の急冷に
よつて高温度領域での結晶構造を低温度領域で保
持させて所定の情報を記録し、又は高温相をベー
スとして、局部的に加熱して高温相中に局部的に
低温相によつて記録し、記録部分に光を照射して
加熱部分と非加熱部分の光学的特性の差を検出し
て情報を再生することができる。更に情報として
記録された部分を記録時の加熱温度より低い温度
又は高い温度で加熱し記録された情報を消去する
ことができる。光はレーザ光線が好ましく、特に
短波長レーザが好ましい。本発明の加熱部分と非
加熱部分との反射率が500nm又は800nm付近の波
長において最も大きいので、このような波長を有
するレーザ光を再生に用いるのが好ましい。記
録、再生には同じレーザ源が用いられ、消去に記
録のものよりエネルギー密度を小さくした他のレ
ーザ光を照射するのが好ましい。
An example of the principle of recording and reproduction when the present invention is used in an optical disk recording medium is as follows. First, the recording medium is locally heated and then rapidly cooled to maintain the crystal structure in the high temperature region in the low temperature region to record predetermined information, or to record the specified information locally based on the high temperature phase. Information can be reproduced by heating and recording locally in a low-temperature phase during a high-temperature phase, and by irradiating the recorded portion with light and detecting the difference in optical characteristics between the heated portion and the non-heated portion. Furthermore, the recorded information can be erased by heating the portion recorded as information at a temperature lower or higher than the heating temperature at the time of recording. The light is preferably a laser beam, particularly a short wavelength laser. Since the reflectance of the heated portion and non-heated portion of the present invention is greatest at a wavelength around 500 nm or 800 nm, it is preferable to use a laser beam having such a wavelength for reproduction. It is preferable that the same laser source be used for recording and reproducing, and for erasing, a different laser beam having a lower energy density than that for recording is irradiated.

また、本発明の記録媒体を用いたデイスクは情
報が記録されているか否かが目視で判別できる大
きなメリツトがある。記録,消去を連続ビーム又
はパルスビームで行う。消去のビームは記録情報
の幅より大きい幅に加熱する。
Furthermore, a disk using the recording medium of the present invention has a great advantage in that it can be visually determined whether information is recorded or not. Recording and erasing are performed using continuous beam or pulsed beam. The erasing beam heats the beam to a width greater than the width of the recorded information.

表示として、特に可視光での分光反射率を部分
的に変えることができるので塗料を使用せずに文
字、図形、記号等を記録することができ、それら
の表示は目視によつて識別することができる。ま
た、これらの情報は消去することができ、記録と
消去のくり返し使用のほか、永久保存も可能であ
る。デイスプレイ装置に使用できる。
As a display, it is possible to partially change the spectral reflectance of visible light, so characters, figures, symbols, etc. can be recorded without using paint, and these displays can be visually identified. I can do it. Furthermore, this information can be erased, and in addition to being used repeatedly by recording and erasing, it is also possible to store it permanently. Can be used for display devices.

〔発明の実施例〕[Embodiments of the invention]

(実施例 1) Ag−40重量%Zn合金をN2ガス雰囲気でカーボ
ンボート中で溶解し、約100mmφ×10tのスパツタ
蒸着用のターゲツトを作製した。このターゲツト
を用い、第5図のaのような膜構成の記録媒体を
作製した。25mmφ×1.2tのガラス基板10の上
に、スパツタ出力140〜200W、基板加熱温度200
℃の条件で、Ag−40重量%Zn膜8を約100nmス
パツタ蒸着した。容器内は10-7Torr程度まで真
空排気後、Arガスを5〜30mTorr導入し、DCマ
グネトロン型スパツタ法を用いた。更にこの合金
膜の上に、レーザ光の干渉層9として厚さ約
500nmをTa2O5をスパツタ蒸着した。このTa2O5
スパツタ蒸着には約5%のO2を導入し、RF型ス
パツタ法を用いた。
(Example 1) An Ag-40 wt % Zn alloy was melted in a carbon boat in an N 2 gas atmosphere to prepare a target for sputter deposition of approximately 100 mmφ×10 t. Using this target, a recording medium having a film structure as shown in FIG. 5a was prepared. Sputter power 140-200W, substrate heating temperature 200W on glass substrate 10 of 25mmφ x 1.2t.
An Ag-40% by weight Zn film 8 was sputter-deposited to a thickness of about 100 nm under the conditions of .degree. After the inside of the container was evacuated to about 10 -7 Torr, Ar gas was introduced at 5 to 30 mTorr, and a DC magnetron type sputtering method was used. Further, on this alloy film, a laser beam interference layer 9 with a thickness of approximately
500 nm of Ta 2 O 5 was sputter deposited. This Ta 2 O 5
Approximately 5% O 2 was introduced into the sputter deposition, and an RF type sputter method was used.

以上のようにして作製した25mmφの記録媒体の
表面は銀白色を呈した。この記録媒体を電気炉中
で約350℃に加熱し、これを急冷(水冷)したと
ころ、合金膜は銀白色かるピンク色に変化するこ
とが分かつた。これはAg−40重量%Znのβ相が
急冷によつてβ′相に変化しているためである。更
にこの急冷された記録媒体を、電気炉中で約200
℃に加熱し、それを除冷(空冷)したところ、ピ
ンク色からもとの銀白色に変化し、これはβ′から
相に変化しているためである。ちなみにレーザ光
による記録,消去特性もこのことと対応する。例
えば、Arレーザのパワーを10〜50mW、ビーム
径を1〜5μの条件で記録媒体上に照射した場合
が記録状態である。この時記録部は銀白色からピ
ンク色に変化する。更に、この記録部を50〜
100nWのパワーで、デイフオーカスしパワー密
度の低いビームを照射したところ、ピンク色から
もとの銀白色に戻り、消去が確認された。このよ
うに記録媒体の記録,消去の特性評価方法として
は、レーザ光を用いることの他に、簡易的に上記
のような熱処理による方法も有効である。
The surface of the 25 mmφ recording medium produced as described above had a silvery white color. When this recording medium was heated to approximately 350°C in an electric furnace and then rapidly cooled (water-cooled), it was found that the alloy film turned silvery white to a slightly pink color. This is because the β phase of Ag-40 wt % Zn was changed to the β' phase by rapid cooling. Furthermore, this rapidly cooled recording medium is heated in an electric furnace for approximately 200 minutes.
When heated to ℃ and slowly cooled (air cooled), the color changes from pink to the original silvery white color, which is due to the change from β' to phase. Incidentally, the recording and erasing characteristics of laser light also correspond to this. For example, the recording state is when the recording medium is irradiated with an Ar laser with a power of 10 to 50 mW and a beam diameter of 1 to 5 μm. At this time, the recording area changes from silvery white to pink. In addition, this recording section is 50~
When irradiated with a defocused beam of low power density at a power of 100 nW, the pink color returned to its original silvery white color, confirming erasure. In this way, as a method for evaluating recording and erasing characteristics of a recording medium, in addition to using laser light, a simple method using heat treatment as described above is also effective.

第11図のa,bは、上記のような熱処理方法
により作製した記録媒体の分光反射特性を示す。
第11図のbが第5図のaの干渉膜9(Ta2O5
500nm厚さ)を付加した膜構成における分光反射
特性であり、著しい干渉が生じていることが分か
る。第11図のaはガラス基板10の上にAg−
40重量%Zn合金膜8のみをスパツタ蒸着したも
ので記録部、未記録部とも反射率が高い。これに
対し、b図は干渉の谷を利用しているが、Arレ
ーザ(λAr=488nm)及び半導体レーザ(λL
830nm)の各波長のところで著しく反射率が下が
つていることが分かる。すなわち、a図の干渉層
なしの場合に比べて、レーザ光の投入エネルギー
が記録媒体中に効率良く吸収され、少ないパワー
で記録、消去が達成されることを意味する。な
お、ここでは、干渉層9を高屈折率のTa2O5
し、500nmとしている。同様に、このような光の
干渉を用いた他の例を第5図のb〜dに示す。干
渉層9としては屈折率が大で、透過性のあるもの
が望ましい。bはAl2O3を干渉層とした場合であ
り、膜厚を干渉条件に合わせれば同様に反射率が
下がる。c及びdは記録合金膜をCu−14重量%
Al−4重量%Ni12に置き換えた場合であり、第
12図のaは干渉膜9なし、bは干渉膜
(Ta2O5,500nm厚さ)を付加した膜構成におけ
る分光反射特性を示す。この場合も第10図の
Ag−40重量%Zn合金膜8と同様に、Arレーザ及
び半導体レーザの各波長のところで反射率が著し
く下がつていることが分かる。半導体レーザによ
り1μm以下の幅でデジタル、アナログの記録、
再生ができることを確認された。
FIGS. 11a and 11b show the spectral reflection characteristics of a recording medium produced by the heat treatment method described above.
b in FIG. 11 is the interference film 9 (Ta 2 O 5 ,
This is the spectral reflection characteristics of a film structure with a thickness of 500 nm), and it can be seen that significant interference occurs. A in FIG. 11 shows Ag− on the glass substrate 10.
Only the 40% by weight Zn alloy film 8 was sputter-deposited, and the reflectance was high in both the recorded and unrecorded areas. On the other hand, diagram b uses the interference valley, but it is not possible to use an Ar laser (λ Ar = 488 nm) and a semiconductor laser (λ L = 488 nm).
It can be seen that the reflectance decreases significantly at each wavelength (830 nm). That is, compared to the case without the interference layer shown in Fig. a, the energy of the laser beam is absorbed into the recording medium more efficiently, and recording and erasing can be achieved with less power. Here, the interference layer 9 is made of Ta 2 O 5 with a high refractive index and has a thickness of 500 nm. Similarly, other examples using such light interference are shown in b to d of FIG. It is desirable that the interference layer 9 has a high refractive index and is transparent. b shows the case where Al 2 O 3 is used as an interference layer, and if the film thickness is adjusted to the interference conditions, the reflectance will similarly decrease. c and d are Cu-14 weight% recording alloy film.
This is the case where Al-4% by weight Ni12 is substituted, and in FIG. 12, a shows the spectral reflection characteristics in a film structure without the interference film 9, and b in the film structure with an interference film (Ta 2 O 5 , 500 nm thick) added. In this case as well, in Figure 10
As with the Ag-40% by weight Zn alloy film 8, it can be seen that the reflectance significantly decreases at each wavelength of Ar laser and semiconductor laser. Digital and analog recording with a width of 1 μm or less using a semiconductor laser,
It has been confirmed that playback is possible.

(実施例 2) 実施例1と同様に、第6図のaはガラス基板1
0の上にスパツタ蒸着によりAg−40重量%Zn合
金膜8(膜厚100nm)を設け、更にその上に
Cr・Ox(クロム酸化物)13を真空蒸着法により
5〜10nm設けた。このCr・Oxは前記したよう
に、反射率の高い金属情報記録層上に熱吸収層と
して付加したものである。上述した結晶−結晶の
相変化合金膜においては、それ自身が高い反射率
を有するため、レーザ光の入熱効率が悪い。これ
をカバーするために記録層上にCr・Ox13を設
けているのである。第13図は、熱吸収層がある
場合と、ない場合との分光反射特性を比較したも
のである。この図から分かるように約300〜
1000nmの波長域において、熱吸収層付きの膜構
成のものが反射率が下がることが分かる。更に、
第6図のbは記録層をCu−14重量%Al−4重量
%Niとし、同様にCr・Oxを付加したものであ
る。この場合もやはり反射率を下げる効果がある
ことが分かつた。又、C,dは熱吸収層13を他
にCu2O14やFe3O415に置き換えた場合であ
るが、同じように反射率を下げる効果がみられ
る。
(Example 2) Similarly to Example 1, a in FIG. 6 is the glass substrate 1.
An Ag-40 wt % Zn alloy film 8 (film thickness 100 nm) was provided on top of 0 by sputter deposition, and further on top of that
Cr.Ox (chromium oxide) 13 was deposited to a thickness of 5 to 10 nm by vacuum evaporation. As described above, this Cr.Ox is added as a heat absorption layer on the metal information recording layer with high reflectance. The above-mentioned crystal-crystal phase change alloy film itself has a high reflectance, so the heat input efficiency of laser light is poor. To cover this, Cr.Ox 13 is provided on the recording layer. FIG. 13 compares the spectral reflection characteristics with and without a heat absorption layer. As you can see from this figure, about 300 ~
It can be seen that in the wavelength range of 1000 nm, the reflectance of the film structure with a heat absorption layer decreases. Furthermore,
In FIG. 6b, the recording layer is made of Cu-14% by weight Al-4% by weight Ni, and Cr.Ox is similarly added thereto. It was found that this case also had the effect of lowering the reflectance. Further, C and d are cases where the heat absorption layer 13 is replaced with Cu 2 O 14 or Fe 3 O 4 15, but the same effect of lowering the reflectance can be seen.

(実施例 3) 実施例1と同様に第7図は、ガラス基板10の
上にスパツタ蒸着によりAg−40重量%Zn合金金
膜8を約100nm設け、更にその上にCr・Oxを10
〜20nm真空蒸着法により設けた。このCr・Oxは
第13図に示した熱吸収層という性質を持たせる
他に、更に厚さを増させて、同時に干渉による反
射率の低下も狙つたものである。このCr・Oxは
透過性を有するとともに屈折率が大きいため、わ
ずかの膜厚で大きな干渉効果が得られた。第14
図は熱吸収及び干渉の両効果を狙つた上記構成の
場合と、記録層8のみの場合との分光反射特性を
示す。この図から分かるように、500〜1000nmの
波長領域において干渉効果により反射率が著しく
下がると同時に、吸収効果もみられ、全体の反射
率が下がつていることが分かり。この点では、
Ta2O5と同様にCr・Oxも反射率を下げ、レーザ
光の入熱効率を増大させるのに適したものであ
り、第7図のような膜構成は非常に実用的なもの
であると言える。
(Example 3) As in Example 1, FIG. 7 shows that an Ag-40 wt % Zn alloy gold film 8 of about 100 nm is provided on a glass substrate 10 by sputter deposition, and further 100 nm of Cr.Ox is added on top of it.
~20nm was provided by vacuum evaporation method. In addition to giving this Cr.Ox the properties of a heat absorption layer shown in FIG. 13, the thickness is further increased, and at the same time, the aim is to reduce the reflectance due to interference. Since this CrOx has transparency and a high refractive index, a large interference effect was obtained with a small film thickness. 14th
The figure shows the spectral reflection characteristics in the case of the above structure aiming at both heat absorption and interference effects and in the case of only the recording layer 8. As can be seen from this figure, in the wavelength range of 500 to 1000 nm, the reflectance significantly decreases due to interference effects, and at the same time absorption effects are also observed, indicating that the overall reflectance decreases. In this respect,
Like Ta 2 O 5 , CrOx is also suitable for lowering the reflectance and increasing the heat input efficiency of laser light, and the film structure shown in Figure 7 is considered to be very practical. I can say it.

(実施例 4) 実施例1と同様に、第8図のaはガラス基板2
0の上にスパツタ蒸着によりAg−40重量%Zn合
金膜8を約100nm設け、更にその上にCr・Ox1
3を約5nm真空蒸着法により設け、更に又、高速
スパツタ蒸着を用いて、その上に50μmのSiO2
0を設けた。この場合、Cr・Oxは実施例2の熱
吸収層に相当するものであるが、部厚く膜付けし
たSiO2は透明保護層であり、記録媒体の保護の
効果以外に、ある程度の大きさを有するレーザ光
が記録膜上で急速にしぼられるため、再生時にお
いて、ある寸法以下のゴミ、ホコリなどによる
SN低下を防ぐ効果を有する。この透明保護層の
別の構成としては、b図に示すように、記録膜8
及び干渉層9の上に、更にガラス基板10を接着
する方法もある。すなわち、ガラス基板10(厚
さ1.2mm)自体が上記透明保護層としてSN比低下
を防ぐ効果を発揮することができる。
(Example 4) As in Example 1, a in FIG. 8 is the glass substrate 2.
An Ag-40 wt% Zn alloy film 8 of approximately 100 nm is provided on the 0 by sputter deposition, and further Cr/Ox 1 is deposited on top of it.
3 was deposited to a thickness of about 5 nm by vacuum evaporation, and then a 50 μm layer of SiO 2 1
0 was set. In this case, CrOx corresponds to the heat absorption layer in Example 2, but the thickly formed SiO 2 is a transparent protective layer, which has a certain size effect in addition to the effect of protecting the recording medium. Since the laser beam possessed by the laser beam is rapidly focused on the recording film, during playback, dirt or dust of less than a certain size may cause damage.
It has the effect of preventing SN reduction. As another structure of this transparent protective layer, as shown in figure b, the recording film 8
There is also a method of further adhering a glass substrate 10 on top of the interference layer 9. That is, the glass substrate 10 (thickness: 1.2 mm) itself can act as the transparent protective layer to prevent a decrease in the SN ratio.

(実施例 5) 実施例1と同様に、第9図のaはガラス基板1
0の上にスパツタ蒸着によりAg−40重量%Zn合
金膜8を約100nm設け、その上に熱吸収層の
Cr・Ox13を5nm真空蒸着し、更にその上に干
渉層のTa2O59をスパツタ蒸着にて約500nm設け
たものである。この膜構成によれば、干渉効果を
Ta2O5に分担させ、次に熱吸収効果をCr・Oxに
分担させることによつて、記録層8にレーザ光の
投入エネルギーを効率良く伝えることが可能であ
る。b図は、同様に、熱吸収層をCu2O14とし、
更に干渉層をAl2O311としたもので、やはり、
互いに熱吸収と干渉効果を分担し、レーザ光によ
る入熱効率を上げるのに役立つ膜構成である。
(Example 5) As in Example 1, a in FIG. 9 is the glass substrate 1.
An Ag-40 wt% Zn alloy film 8 of approximately 100 nm is provided on the 0 by sputter deposition, and a heat absorption layer is placed on top of it.
Cr.Ox 13 was vacuum-deposited to a thickness of 5 nm, and an interference layer of Ta 2 O 5 9 was further formed to a thickness of about 500 nm on top by sputter deposition. According to this membrane configuration, the interference effect can be reduced.
By having Ta 2 O 5 share the heat absorption effect and then Cr.Ox share the heat absorption effect, it is possible to efficiently transmit the input energy of the laser beam to the recording layer 8. Similarly, in figure b, the heat absorption layer is made of Cu 2 O14,
Furthermore, the interference layer is made of Al 2 O 3 11, and as expected,
This film structure helps to share heat absorption and interference effects with each other and increases heat input efficiency by laser light.

(実施例 6) 実施例1と同様に、第10図はPMMA17基
板上にスパツタ蒸着によりSiO210を約100nm
設け、その上にAg−40重量%Zn8を約100nm設
け、更にその上に熱吸収層のCr・Ox13を約
5nm設け、この上にもう一度SiO210を約100nm
設ける。すなわち、記録層と熱吸収層を熱絶縁効
果の高いSiO210によつてサンドイツチした膜
構成である。このSiO210は熱吸収層及び記録
層内で発熱したエネルギーを分散させないで、相
変化に寄与する入熱分布をせまく、効率良くしよ
うとするものである。
(Example 6) Similar to Example 1, Fig. 10 shows SiO 2 10 deposited to a thickness of approximately 100 nm on a PMMA 17 substrate by sputter deposition.
On top of that, about 100 nm of Ag-40wt% Zn8 is placed, and on top of that, about Cr/Ox13 of a heat absorption layer is placed.
Place 5nm of SiO 2 10 on top of this and add about 100nm of SiO 2 10 again.
establish. That is, the film structure is such that the recording layer and the heat absorption layer are sandwiched with SiO 2 10, which has a high thermal insulation effect. This SiO 2 10 is intended to improve efficiency by narrowing the heat input distribution contributing to phase change without dispersing the energy generated within the heat absorption layer and the recording layer.

(実施例 7) 第1図は本発明の情報記録媒体の部分断面構成
図である。本実施例は前述の実施例で記載した方
法と同様に製造される。シリカガラス基板7に対
してトラツキング用溝19がエツチング等によつ
て形成され、その上に実施例1と同様にAg−35
重量%Zn合金が約100nmの厚さに設けられ、そ
の上にTa2O5からなる干渉層9が約500nmの厚さ
に設けられ、次いでPMMAの透明層4が設けら
れている。本実施例によれば、レンズ20によつ
てフオーカスされたレーザ光18による光エネル
ギーを干渉層2によつて有効に記録層1に与える
ことができるので小さいエネルギーで情報の記
録,再生、消去が可能となる。
(Embodiment 7) FIG. 1 is a partial cross-sectional configuration diagram of an information recording medium of the present invention. This example is manufactured similarly to the method described in the previous example. A tracking groove 19 is formed on the silica glass substrate 7 by etching or the like, and then Ag-35
% Zn alloy is applied to a thickness of approximately 100 nm, on which an interference layer 9 of Ta 2 O 5 is applied to a thickness of approximately 500 nm, and then a transparent layer 4 of PMMA is applied. According to this embodiment, the optical energy of the laser beam 18 focused by the lens 20 can be effectively applied to the recording layer 1 by the interference layer 2, so that information can be recorded, reproduced, and erased with small energy. It becomes possible.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、特に結晶−結晶間の相変化に
よる分光反射率差を利用した光デイスク記録媒体
としてエネルギーの利用効率の高い膜構成が得ら
れる効果がある。
According to the present invention, it is possible to obtain a film structure with high energy utilization efficiency, especially as an optical disk recording medium that utilizes the spectral reflectance difference due to phase change between crystals.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の情報記録媒体の部分断面斜視
図、第2図及び第3図は本発明の情報記録媒体の
断面構成図、第4図は本発明の記録層に係る二元
合金系の平衡状態図、第5図〜第10図は本発明
の実施例に示した情報記録媒体の断面構成図、第
11図〜第14図は分光反射率特性を示す線図で
ある。 1…記録層、2…干渉層、2′…干渉及び吸込
層、3…熱吸収層、4…透明層、5…熱絶縁層、
6…保護層、7…媒体支持層、8…Ag−40Zn、
9…Ta2O5、10…SiO2、11…Al2O3、12…
Cu−15%Al−4%Ni合金、13…Cr・Ox、1
4…Cu2O、15…Fe3O4、16…Ta2O5-x、17
…PMMA、18…レーザ光、19…トラツキン
グ用溝、20…レンズ。
FIG. 1 is a partial cross-sectional perspective view of the information recording medium of the present invention, FIGS. 2 and 3 are cross-sectional configuration diagrams of the information recording medium of the present invention, and FIG. 4 is a binary alloy system related to the recording layer of the present invention. FIGS. 5 to 10 are cross-sectional configuration diagrams of information recording media shown in examples of the present invention, and FIGS. 11 to 14 are diagrams showing spectral reflectance characteristics. DESCRIPTION OF SYMBOLS 1... Recording layer, 2... Interference layer, 2'... Interference and suction layer, 3... Heat absorption layer, 4... Transparent layer, 5... Heat insulation layer,
6... Protective layer, 7... Media support layer, 8... Ag-40Zn,
9...Ta 2 O 5 , 10... SiO 2 , 11... Al 2 O 3 , 12...
Cu-15%Al-4%Ni alloy, 13...Cr・Ox, 1
4... Cu2O , 15 ... Fe3O4 , 16... Ta2O5 -x , 17
...PMMA, 18...Laser light, 19...Tracking groove, 20...Lens.

Claims (1)

【特許請求の範囲】 1 合金からなる記録層と該記録層の表面反射率
を低減する層とを有する光記録媒体に、光エネル
ギーを照射し前記記録層を加熱することによつ
て、情報を記録し、又は消去する情報の記録・消
去方法において、 前記光エネルギーを前記記録層の表面反射率を
低減する層を通して前記記録層に入射し、高温相
温度領域まで加熱し急冷することによつて形成さ
れる第一の結晶と、低温相温度領域で加熱し冷却
することによつて形成され、金属間化合物を有す
る前記第一の結晶と異なる第二の結晶との間で記
録層を可逆的に相変化させ、前記記録層を形成す
る合金の反射率を変化させることによつて情報を
記録し、又は消去することを特徴とする情報を記
録・消去方法。
[Claims] 1. Information can be recorded by irradiating optical energy onto an optical recording medium having a recording layer made of an alloy and a layer that reduces the surface reflectance of the recording layer and heating the recording layer. In the recording/erasing method of recording or erasing information, the light energy is incident on the recording layer through a layer that reduces the surface reflectance of the recording layer, and is heated to a high phase temperature region and then rapidly cooled. A recording layer is reversibly formed between a first crystal to be formed and a second crystal, which is formed by heating and cooling in a low phase temperature region and is different from the first crystal and has an intermetallic compound. A method for recording and erasing information, characterized in that information is recorded or erased by changing the phase of the alloy forming the recording layer and changing the reflectance of the alloy forming the recording layer.
JP59255301A 1984-11-29 1984-12-03 Information recording medium Granted JPS61134294A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP59255301A JPS61134294A (en) 1984-12-03 1984-12-03 Information recording medium
US06/801,950 US4651172A (en) 1984-11-29 1985-11-26 Information recording medium
CA000496335A CA1238489A (en) 1984-11-29 1985-11-27 Information recording medium
DE8585308665T DE3583599D1 (en) 1984-11-29 1985-11-28 INFORMATION RECORDING MEDIUM.
EP85308665A EP0186329B1 (en) 1984-11-29 1985-11-28 Information recording medium
KR1019850008929A KR920001263B1 (en) 1984-11-29 1985-11-29 How to record and erase information

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59255301A JPS61134294A (en) 1984-12-03 1984-12-03 Information recording medium

Publications (2)

Publication Number Publication Date
JPS61134294A JPS61134294A (en) 1986-06-21
JPH0448113B2 true JPH0448113B2 (en) 1992-08-05

Family

ID=17276871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59255301A Granted JPS61134294A (en) 1984-11-29 1984-12-03 Information recording medium

Country Status (1)

Country Link
JP (1) JPS61134294A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5240171A (en) * 1987-05-21 1993-08-31 Lanxide Technology Company, Lp Method for surface bonding of ceramic bodies
JP2006511013A (en) * 2002-12-19 2006-03-30 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Recordable optical record carrier

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5920473B2 (en) * 1974-08-06 1984-05-14 キヤノン株式会社 Method for manufacturing laser beam recording medium
JPS5174632A (en) * 1974-12-24 1976-06-28 Canon Kk
JPS5928478B2 (en) * 1975-05-19 1984-07-13 キヤノン株式会社 Laser beam recording method
JPS5177325A (en) * 1974-12-27 1976-07-05 Matsushita Electric Industrial Co Ltd
FR2475270A1 (en) * 1980-02-01 1981-08-07 Thomson Csf REVERSIBLE MEMORY STRUCTURE, THERMO-OPTICAL INTEGRATION AND OPTICAL READING, AND METHOD FOR INSCRIPTION AND ERASURE OF THIS STRUCTURE
JPS57111839A (en) * 1980-05-14 1982-07-12 Rca Corp Reversible information recording body and method of reversibly recording and erasing information to said recording body

Also Published As

Publication number Publication date
JPS61134294A (en) 1986-06-21

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