JPH0448177B2 - - Google Patents
Info
- Publication number
- JPH0448177B2 JPH0448177B2 JP14880284A JP14880284A JPH0448177B2 JP H0448177 B2 JPH0448177 B2 JP H0448177B2 JP 14880284 A JP14880284 A JP 14880284A JP 14880284 A JP14880284 A JP 14880284A JP H0448177 B2 JPH0448177 B2 JP H0448177B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetic field
- amorphous
- alloy
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910001004 magnetic alloy Inorganic materials 0.000 claims description 40
- 230000005415 magnetization Effects 0.000 claims description 23
- 238000001514 detection method Methods 0.000 claims description 20
- 230000035699 permeability Effects 0.000 claims description 10
- 230000008859 change Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 238000005259 measurement Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 6
- 230000005381 magnetic domain Effects 0.000 description 5
- 229910000859 α-Fe Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/16—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in the magnetic properties of material resulting from the application of stress
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Measurement Of Resistance Or Impedance (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、非晶質磁性合金を用いた力学量−イ
ンダクタンス変換型センサにおける検出方法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a detection method in a mechanical quantity-inductance conversion type sensor using an amorphous magnetic alloy.
従来例の構成とその問題点
従来、非晶質磁性合金の磁歪効果を用い、各種
の応力や歪の検出センサが提唱されている。その
検出方法は、非晶質磁性合金を少なくとも一部に
有する磁気回路の磁気特性の変化を検出するもの
であり、被検出応力による非晶質磁性合金の磁歪
効果に起因する磁気回路のインダクタンス変化を
検出するために、交流磁界が磁気回路に印加され
る。しかしながら、従来の方法においては感度再
現性・温度特性において問題が残されていた。Conventional configurations and their problems Conventionally, various stress and strain detection sensors have been proposed using the magnetostrictive effect of amorphous magnetic alloys. The detection method detects changes in the magnetic properties of a magnetic circuit that has an amorphous magnetic alloy at least in part, and detects changes in the inductance of the magnetic circuit caused by the magnetostrictive effect of the amorphous magnetic alloy due to the stress to be detected. To detect , an alternating magnetic field is applied to the magnetic circuit. However, conventional methods still have problems in sensitivity reproducibility and temperature characteristics.
発明の目的
本発明は、感度、再現性、温度特性の改善され
た、非晶質磁性合金応用センサを用いた検出方法
を提供するものである。Object of the Invention The present invention provides a detection method using an amorphous magnetic alloy applied sensor with improved sensitivity, reproducibility, and temperature characteristics.
発明の構成
本発明においては、非晶質磁性合金を含む磁気
回路を備えたセンサのインダクタンス値検出にあ
たつて、直流磁界を重畳した交流磁界を用いる。
この直流磁界は、非晶質磁性合金部でその最大透
磁率を示す磁界以上で、飽和磁化の95％が誘起さ
れる磁界以下の範囲とする。Structure of the Invention In the present invention, an alternating current magnetic field superimposed on a direct current magnetic field is used to detect the inductance value of a sensor equipped with a magnetic circuit including an amorphous magnetic alloy.
This DC magnetic field is set in a range that is greater than or equal to the magnetic field that exhibits the maximum magnetic permeability in the amorphous magnetic alloy portion and less than or equal to the magnetic field that induces 95% of the saturation magnetization.
実施例の説明
第１図は非晶質磁性合金の磁歪効果を用いた圧
力センサを示した図である。図において、１は磁
歪を有する非晶質磁性合金、２は軟磁性フエライ
トでこの両者で磁気回路を構成している。３はこ
の磁気回路を励磁するコイルであり、全体はケー
ス４に納められている。圧力は導入部５より透孔
６を通じて非晶質磁性合金１に加えられる。７は
シール用のＯリングである。圧力の印加に伴い非
晶質磁性合金１中に歪が発生すると、磁歪効果に
より非晶質磁性合金１の磁性が変化し、インダク
タンス測定回路８により検出されるインダクタン
ス値が変化する。これより圧力がインダクタンス
の形で検出される。DESCRIPTION OF EMBODIMENTS FIG. 1 is a diagram showing a pressure sensor using the magnetostrictive effect of an amorphous magnetic alloy. In the figure, 1 is an amorphous magnetic alloy having magnetostriction, and 2 is a soft magnetic ferrite, both of which constitute a magnetic circuit. 3 is a coil that excites this magnetic circuit, and the whole is housed in a case 4. Pressure is applied to the amorphous magnetic alloy 1 from the introduction part 5 through the through hole 6. 7 is an O-ring for sealing. When strain occurs in the amorphous magnetic alloy 1 due to the application of pressure, the magnetism of the amorphous magnetic alloy 1 changes due to the magnetostrictive effect, and the inductance value detected by the inductance measurement circuit 8 changes. From this, pressure is detected in the form of inductance.
第２図は上記インダクタンス測定回路８の回路
図である。図において、１０は圧力センサの磁気
回路を励磁するコイル、１１は直流定電圧電源、
１２は交流定電圧電源、１３は直流定電圧電源１
１からコイル１０に直流電流を供給し直流磁場を
与える抵抗、１４は測定用交流磁場を与える交流
電流を交流定電圧源１２から供給するコンデン
サ、１５はセンサの出力電流を電圧に変換する微
小抵抗、１６は出力電圧の交流成分を抽出するコ
ンデンサ、１７は微小抵抗１５に発生する交流電
圧を測定する高インピーダンス入力の交流電圧測
定器、１８は交流電圧測定器１７のデジタル出力
を入力とするマイクロコンピユータ、１９はマイ
クロコンピユータ１８の出力を表示する表示装置
である。マイクロコンピユータ１８は、交流電圧
測定器１７のデジタル出力を入力された場合に、
その入力に対応するインダクタンス値あるいは圧
力値を出力するようにプログラムされている。 FIG. 2 is a circuit diagram of the inductance measuring circuit 8. As shown in FIG. In the figure, 10 is a coil that excites the magnetic circuit of the pressure sensor, 11 is a DC constant voltage power supply,
12 is an AC constant voltage power supply, 13 is a DC constant voltage power supply 1
1 is a resistor that supplies DC current to the coil 10 and a DC magnetic field; 14 is a capacitor that supplies an AC current that provides an AC magnetic field for measurement from an AC constant voltage source 12; and 15 is a microresistor that converts the output current of the sensor into voltage. , 16 is a capacitor that extracts the AC component of the output voltage, 17 is a high impedance input AC voltage measuring device that measures the AC voltage generated in the microresistance 15, and 18 is a microcontroller that receives the digital output of the AC voltage measuring device 17 as an input. A computer 19 is a display device that displays the output of the microcomputer 18. When the microcomputer 18 receives the digital output of the AC voltage measuring device 17,
It is programmed to output an inductance value or pressure value corresponding to its input.
直流定電圧電源１１からの直流電流は抵抗１
３、抵抗１５およびセンサ部の直流抵抗が変化し
ないので一定で、その結果センサに加わる直流起
磁力は一定である。一方、交流定電圧電源１２か
らの電圧振幅は一定であるが、印加圧力によりセ
ンサのインピーダンスが変化するため交流電流値
は変化する。すなわち応力が発生した場合には交
流磁界振幅はやや大きくなる。 The DC current from the DC constant voltage power supply 11 is connected to the resistor 1.
3. The DC resistance of the resistor 15 and the sensor section does not change and is constant, and as a result, the DC magnetomotive force applied to the sensor is constant. On the other hand, although the voltage amplitude from the AC constant voltage power supply 12 is constant, the AC current value changes because the impedance of the sensor changes depending on the applied pressure. That is, when stress occurs, the alternating current magnetic field amplitude becomes slightly larger.
しかしながら、このセンサのインダクタンス値
検出において、従来行われていたように第３図の
ような通常の交流磁界を用いるとその出力は小さ
く、また再現性も悪くヒステリシアスが発生し、
温度特性も良くない。 However, when detecting the inductance value of this sensor using a normal alternating current magnetic field as shown in Figure 3, the output is small, the reproducibility is poor, and hysteresis occurs.
Temperature characteristics are also not good.
第４図はこの交流磁界だけで測定した場合の圧
力に対するインダクタンス値変化を実測した例で
ある。矢印は測定の順序を示している。 FIG. 4 is an example of actually measuring the change in inductance value with respect to pressure when measured only with this alternating magnetic field. Arrows indicate the order of measurements.
第５図は本発明による検出方法のインダクタン
ス検出磁界を示している。通常の交流磁界に直流
磁界Hdcを重畳している。 FIG. 5 shows the inductance detection magnetic field of the detection method according to the present invention. A DC magnetic field Hdc is superimposed on a normal AC magnetic field.
第６図は圧力センサが直流バイアス電流、すな
わち直流バイアス磁界に対して、そのインダクタ
ンスがどのように変化するのかを測定した結果で
ある。インダクタンスの測定は30℃において、一
定電圧振幅、20kHzの交流電源により、センサ印
加圧力が０気圧、30気圧時に行つた。横軸は加え
た直流バイアス電流である。また横軸には、０気
圧における非晶質磁性合金に加わる直流バイアス
磁界について、非晶質磁性合金単体での測定結果
から類推される直流磁界値を同時に示した。ここ
では０気圧時に1mAが0.50eに相当する。直流バ
イアス電流は第２図に示したセンサのインダクタ
ンス測定回路から分かるように、センサ印加圧力
が変化しても直流抵抗分は変化しないので一定で
ある。したがつて第６図の０気圧と30気圧の縦方
向のインダクタンス値の変化がセンサ出力に相当
する。 FIG. 6 shows the results of measuring how the inductance of the pressure sensor changes with respect to a DC bias current, that is, a DC bias magnetic field. Inductance measurements were performed at 30°C, constant voltage amplitude, 20kHz AC power supply, and sensor applied pressures of 0 and 30 atmospheres. The horizontal axis is the applied DC bias current. In addition, the horizontal axis also shows the DC magnetic field value inferred from the measurement results of the amorphous magnetic alloy alone, with respect to the DC bias magnetic field applied to the amorphous magnetic alloy at 0 atmospheres. Here, 1mA at 0 atmospheric pressure corresponds to 0.50e. As can be seen from the sensor inductance measuring circuit shown in FIG. 2, the DC bias current is constant because the DC resistance does not change even if the pressure applied to the sensor changes. Therefore, the change in inductance value in the vertical direction between 0 atm and 30 atm in FIG. 6 corresponds to the sensor output.
この実験結果からも、前述のように通常の交流
磁界だけでの測定では、０気圧と30気圧のインダ
クタンス値の変化が小さいことが分かり、センサ
出力が小さいことが示される。そして重畳直流電
流を増すと、すなわち重畳直流磁界を増すと、イ
ンダクタンス値が減少し始める付近より０気圧と
30気圧のインダクタンス値変化がすなわちセンサ
出力が増加し始め、最大値を取つた後、減少して
いくことも分かる。インダクタンス変化のメカニ
ズムについては現時点で必ずしも明らかではない
が、現在提案されているモデルに従えば、インダ
クタンス値が減少を始める付近は非晶質磁性合金
の磁化過程が低重畳直流磁界での磁壁移動に基づ
くものから、高重畳直流磁界での回転磁化過程に
基づく変化に移行する領域と考えられる。 This experimental result also shows that, as mentioned above, when measuring only with a normal alternating magnetic field, the change in inductance value between 0 and 30 atmospheres is small, indicating that the sensor output is small. Then, when the superimposed DC current is increased, that is, when the superimposed DC magnetic field is increased, the inductance value decreases from the point where it starts to decrease to 0 atm.
It can also be seen that when the inductance value changes by 30 atm, the sensor output begins to increase, reaches the maximum value, and then decreases. The mechanism of inductance change is not necessarily clear at present, but according to the currently proposed model, the magnetization process of the amorphous magnetic alloy is caused by domain wall movement in a low superimposed DC magnetic field near the point where the inductance value starts to decrease. This is considered to be a region in which the change is based on the rotational magnetization process in a highly superimposed DC magnetic field.
このようなセンサ出力の増大すなわち印加圧力
によりセンサの直流バイアス特性の変化が生ずる
のは次のようなことが原因と考えられる。 The reason why the DC bias characteristics of the sensor change due to such an increase in the sensor output, that is, the applied pressure is considered to be due to the following reasons.
センサは一つの磁気回路を構成しており、この
磁気回路にはコイルに加えられる起磁力と磁気抵
抗で決まる磁束が流れる。センサは非晶質磁性合
金とフエライト部分よりなるが、それぞれが磁気
抵抗部品となる。ここで軟磁性フエライトは圧力
に対して磁気抵抗の変化はないが、非晶質磁性合
金は圧力により大きく磁気抵抗が変化する。すな
わち非晶質磁性合金に圧力が加わり応力が発生す
ると、非晶質磁性合金中ではその応力により磁壁
が固定され、磁区構造が固定化され、直流磁気抵
抗が大きくなる。バイアス電流が一定の場合、直
流起磁力は一定だから、磁気抵抗の大きさにより
印加される磁界が分配される。すなわち圧力の印
加によつて、同じ重畳直流電流を加えても、非晶
質磁性合金に加わる直流磁界が０気圧時に比べて
増加する。その結果、30気圧印加時の直流磁界の
効果が０気圧に比べて顕著となると考えられる。 The sensor constitutes one magnetic circuit, and a magnetic flux determined by the magnetomotive force and magnetic resistance applied to the coil flows through this magnetic circuit. The sensor consists of an amorphous magnetic alloy and a ferrite section, each of which is a magnetoresistive component. Here, the magnetic resistance of soft magnetic ferrite does not change with pressure, but the magnetic resistance of amorphous magnetic alloy changes significantly with pressure. That is, when pressure is applied to the amorphous magnetic alloy and stress is generated, the domain walls in the amorphous magnetic alloy are fixed by the stress, the magnetic domain structure is fixed, and the DC magnetic resistance increases. When the bias current is constant, the DC magnetomotive force is constant, so the applied magnetic field is distributed depending on the magnitude of the magnetic resistance. That is, by applying pressure, even if the same superimposed DC current is applied, the DC magnetic field applied to the amorphous magnetic alloy increases compared to when the pressure is 0 atmospheric pressure. As a result, it is thought that the effect of the DC magnetic field when 30 atm is applied is more significant than when 0 atm is applied.
第７図および第８図は各々、第１図におけるセ
ンサに用いた非晶質磁性合金単体において、イン
ダクタンス測定に直流磁界を重畳した場合の特性
およびＢ−Ｈループである。第６図の特性を第７
図と比較して、200mOe以上で約30e以下の直流
磁界が非晶質磁性合金に印加された場合に出力の
増加が実現されると思われる。この磁界の大きさ
は第８図のＢ−Ｈループから見ると、最大透磁率
を与える磁界以上で、飽和磁化の95％を誘起する
磁界以下に相当すると考えられる。この最大透磁
率を与える磁界は第６図の特性では、低直流磁界
時の、インダクタンス値一定部からその値が下が
り始める肩部に相当している。さらに特性上最も
望ましいのは直流磁界が第８図のＢ−Ｈループの
肩部に相当する大きさの場合であることも分か
る。 7 and 8 respectively show the characteristics and BH loop when a direct current magnetic field is superimposed on inductance measurement in the single amorphous magnetic alloy used in the sensor in FIG. 1. The characteristics in Figure 6 are shown in Figure 7.
Compared to the figure, it appears that an increase in output is achieved when a DC magnetic field of 200 mOe or more and about 30e or less is applied to the amorphous magnetic alloy. When viewed from the B-H loop in FIG. 8, the magnitude of this magnetic field is considered to be greater than the magnetic field that gives the maximum magnetic permeability and less than the magnetic field that induces 95% of saturation magnetization. In the characteristics shown in FIG. 6, the magnetic field that provides this maximum permeability corresponds to the shoulder portion where the inductance value starts to decrease from the constant portion when the DC magnetic field is low. Furthermore, it can be seen that the most desirable characteristic is the case where the DC magnetic field has a magnitude corresponding to the shoulder of the B-H loop in FIG.
第９図は本発明の検出方法による圧力に対する
インダクタンス値変化を測定した結果である。出
力が増加し、またヒステリシスもない。 FIG. 9 shows the results of measuring changes in inductance values with respect to pressure using the detection method of the present invention. Increased output and no hysteresis.
第１０図は温度が−30℃、50℃、130℃におけ
る圧力に対するインダクタンス値変化を従来の交
流磁界だけの検出方法と直流磁界を重畳した本発
明の検出方法とで比較したものである。本発明の
検出方法により温度特性も同時に改善されること
が明らかである。 FIG. 10 compares the change in inductance value with respect to pressure at temperatures of -30°C, 50°C, and 130°C between the conventional detection method using only an AC magnetic field and the detection method of the present invention in which a DC magnetic field is superimposed. It is clear that the detection method of the present invention also improves the temperature characteristics at the same time.
以上の説明は第１図の圧力センサに関したもの
であるが、非晶質磁性合金の磁歪効果を用いた力
学量−インダクタンス変換型のセンサについては
全く同じ効果が得られる。 Although the above explanation relates to the pressure sensor shown in FIG. 1, exactly the same effect can be obtained with a mechanical quantity-inductance conversion type sensor using the magnetostrictive effect of an amorphous magnetic alloy.
このことは次のようなことが原因と考えられ
る。非晶質磁性合金を応用したセンサでは、応力
による非晶質磁性合金の磁化過程の変化がその出
力原理になつている。すなわち非晶質磁性合金内
では印加磁界により磁壁移動や磁区内の磁化の回
転が生じるが、これらの磁化過程が応力や、圧力
により変化することを原理として用いている。一
般に低重畳直流磁界での磁壁移動の磁化過程は、
ヒステリシスがあり、このことはセンサのインダ
クタンス測定にもヒステリシスが生じることを意
味する。一方高重畳直流磁界の場合の回転磁化過
程はヒステリシスが小さい。これは磁性体内の磁
区がほぼ磁界方向に整列し、印加磁束により発生
するトルクによつて、磁化が可逆的に回転するた
めである。本発明による検出方法では、一定値以
上の直流磁界を重畳することにより、磁区の整列
傾向を実現し、これによりセンサのヒステリシス
の改善を可能にしている。また磁壁移動過程は、
磁性体内を磁壁がエネルギー障壁を乗り越えて移
動するため、温度に対し磁化率の変化が大きい
が、回転磁化では、温度に対する透磁率の変動要
因が磁化の温度特性だけになり、比較的磁化率の
温度変化が少ない。このことが本発明の検出方法
によるセンサ出力の温度特性改善の理由と思われ
る。 This is thought to be caused by the following reasons. In sensors using amorphous magnetic alloys, the output principle is based on changes in the magnetization process of the amorphous magnetic alloy due to stress. That is, in an amorphous magnetic alloy, an applied magnetic field causes domain wall movement and rotation of magnetization within a magnetic domain, and the principle used is that these magnetization processes change depending on stress or pressure. Generally, the magnetization process of domain wall movement in a low superimposed DC magnetic field is
There is hysteresis, which means that the sensor's inductance measurement also has hysteresis. On the other hand, the rotational magnetization process in the case of a highly superimposed DC magnetic field has small hysteresis. This is because the magnetic domains within the magnetic body are aligned substantially in the direction of the magnetic field, and the magnetization is reversibly rotated by the torque generated by the applied magnetic flux. In the detection method according to the present invention, by superimposing a DC magnetic field of a certain value or more, a tendency to align the magnetic domains is realized, thereby making it possible to improve the hysteresis of the sensor. In addition, the domain wall movement process is
Because the domain wall moves through the energy barrier in a magnetic body, the change in magnetic susceptibility is large with respect to temperature. However, in rotating magnetization, the only factor that changes magnetic permeability with respect to temperature is the temperature characteristic of magnetization, and the magnetic susceptibility is relatively small. Little temperature change. This seems to be the reason for the improvement in the temperature characteristics of the sensor output by the detection method of the present invention.
上述のように直流磁界が加わると、非晶質磁性
合金の磁化過程は磁壁移動によるものから回転磁
化によるものへと順次変化していく。 As described above, when a DC magnetic field is applied, the magnetization process of the amorphous magnetic alloy changes sequentially from domain wall displacement to rotational magnetization.
直流磁界を加えない場合の透磁率は−30℃〜
130℃の範囲内においては温度とともに増大する。
一方、回転磁化の領域では透磁率は温度とともに
減少する。したがつて直流磁界を加え、磁壁移動
より回転磁化へ移行する途中において温度特性が
平坦となる領域が存在する。 Magnetic permeability when no DC magnetic field is applied is -30℃ ~
It increases with temperature within the range of 130°C.
On the other hand, in the region of rotational magnetization, magnetic permeability decreases with temperature. Therefore, when a DC magnetic field is applied, there is a region where the temperature characteristics become flat during the transition from domain wall motion to rotational magnetization.
さらに詳しく説明すると、最大透磁率は磁化過
程の磁壁移動と回転磁化とが同時に存在し始める
直流磁界で得られる。そのため回転磁化領域を利
用するためには少なくともこの最大透磁率を与え
る直流磁界以上の磁界が必要である。また200e以
上の直流磁界を印加すると、０気圧と30気圧のイ
ンダクタンス値がほぼ等しくなり、その差として
の出力がほぼ０となる。これは飽和磁化の95％を
誘起する磁界に相当する。 To explain in more detail, the maximum magnetic permeability is obtained in a DC magnetic field where domain wall movement and rotational magnetization in the magnetization process begin to exist simultaneously. Therefore, in order to utilize the rotating magnetization region, a magnetic field that is at least higher than the DC magnetic field that provides this maximum magnetic permeability is required. Furthermore, when a DC magnetic field of 200e or more is applied, the inductance values at 0 atm and 30 atm become almost equal, and the output as the difference between them becomes almost 0. This corresponds to a magnetic field that induces 95% of saturation magnetization.
また出力の増加は、圧力などの応力の印加にと
もなつて、非晶質磁性合金の直流磁気抵抗が大き
く変化するため、重畳直流磁界の分配が非晶質磁
性合金性合金側に多くなり、第６図に示したよう
に、より大きな直流磁界依存性を示すようになる
ためと考えられる。 In addition, the increase in output is due to the fact that the DC magnetic resistance of the amorphous magnetic alloy changes greatly with the application of stress such as pressure, so the distribution of the superimposed DC magnetic field increases toward the amorphous magnetic alloy. This is thought to be because, as shown in FIG. 6, it shows greater dependence on the DC magnetic field.
このような考察からも分かるように本発明は、
非晶質磁性合金の磁区構造を配向気味にし、同時
に磁化を完全に配向させないすなわち飽和させな
いことである。このことを実現できる直流磁界
は、第６図、第７図、第８図の実験結果から、非
晶質磁性合金では最大透磁率を与える磁界と飽和
磁化の95％を誘起する磁界の間である。 As can be seen from such considerations, the present invention
The purpose is to make the magnetic domain structure of the amorphous magnetic alloy slightly oriented, while at the same time not making the magnetization completely oriented, that is, not saturated. From the experimental results shown in Figures 6, 7, and 8, the DC magnetic field that can achieve this is between the magnetic field that gives maximum permeability and the magnetic field that induces 95% of saturation magnetization in amorphous magnetic alloys. be.
発明の効果
以上述べたように本発明による検出方法を用い
れば、非晶質磁性合金の磁歪効果を用いた、力学
量−インダクタンス変換型のセンサにおいて、出
力の増大が図れ、再現性および安定性の良いセン
サが実現でき、その効果は極めて大きい。Effects of the Invention As described above, by using the detection method according to the present invention, it is possible to increase the output in a mechanical quantity-inductance conversion type sensor that uses the magnetostrictive effect of an amorphous magnetic alloy, and improve reproducibility and stability. A sensor with good quality can be realized, and the effect is extremely large.
第１図は非晶質磁性合金を用いた圧力センサの
断面図、第２図は圧力センサのインダクタンス測
定回路の回路図、第３図は従来の検出磁界の波形
図、第４図は従来の検出方法による測定の特性
図、第５図は本発明における検出磁界の波形図、
第６図は０気圧および30気圧の圧力を印加した場
合の圧力センサのインダクタンス値の直流重畳磁
昇に対する依存性を示した特性図、第７図は第１
図の圧力センサに用いた非晶質磁性合金のインダ
クタンス値の、直流重畳磁界に対する依存性を示
した特性図、第８図は同非晶質磁性合金のＢ−Ｈ
ループ特性図、第９図は本発明の検出方法を用い
た測定の特性図、第１０図は従来の検出方法およ
び本発明の検出方法における出力の温度依存性を
示す特性図である。
１……非晶質磁性合金、２……軟磁性フエライ
ト、３……コイル、８……インダクタンス測定回
路。
Figure 1 is a cross-sectional view of a pressure sensor using an amorphous magnetic alloy, Figure 2 is a circuit diagram of the pressure sensor's inductance measurement circuit, Figure 3 is a waveform diagram of a conventional detection magnetic field, and Figure 4 is a diagram of a conventional detection magnetic field. A characteristic diagram of measurement by the detection method, FIG. 5 is a waveform diagram of the detected magnetic field in the present invention,
Figure 6 is a characteristic diagram showing the dependence of the inductance value of the pressure sensor on DC superimposed magnetic rise when pressures of 0 and 30 atmospheres are applied, and Figure 7 is
Figure 8 is a characteristic diagram showing the dependence of the inductance value of the amorphous magnetic alloy used in the pressure sensor on the DC superimposed magnetic field.
9 is a characteristic diagram of measurement using the detection method of the present invention, and FIG. 10 is a characteristic diagram showing the temperature dependence of the output in the conventional detection method and the detection method of the present invention. 1... Amorphous magnetic alloy, 2... Soft magnetic ferrite, 3... Coil, 8... Inductance measurement circuit.
Claims (1)
金で構成され、かつ前記非晶質磁性合金に被検出
物により歪が発生するように構成された磁気回路
と、前記磁気回路のインダクタンス値を検出する
ために前記磁気回路に磁界を印加するコイルとを
備えたセンサを用い、前記コイルによるインダク
タンス値検出磁界として前記非晶質磁性合金にそ
の最大透磁率を示す磁界以上で、飽和磁化の95％
が誘起される磁界以下の直流磁界を重畳した交流
磁界を用いることを特徴とする非晶質磁性合金応
用センサ検出方法。1. Detecting a magnetic circuit at least partially made of an amorphous magnetic alloy having magnetostriction and configured such that strain is generated in the amorphous magnetic alloy by an object to be detected, and an inductance value of the magnetic circuit. In order to do this, a sensor equipped with a coil that applies a magnetic field to the magnetic circuit is used, and the inductance value detected by the coil is set to a magnetic field that is greater than or equal to the magnetic field that exhibits the maximum permeability of the amorphous magnetic alloy, and that is 95% of the saturation magnetization.
An amorphous magnetic alloy applied sensor detection method characterized by using an alternating current magnetic field superimposed with a direct current magnetic field smaller than the magnetic field induced by the amorphous magnetic alloy.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14880284A JPS6128830A (en) | 1984-07-18 | 1984-07-18 | Amorphous magnetic alloy applied sensor detection method |
| US06/667,224 US4625562A (en) | 1984-06-08 | 1984-11-01 | Amorphous magnetic alloy sensor |
| DE8484307615T DE3478874D1 (en) | 1984-06-08 | 1984-11-05 | Amorphous magnetic alloy sensor |
| EP84307615A EP0167692B1 (en) | 1984-06-08 | 1984-11-05 | Amorphous magnetic alloy sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14880284A JPS6128830A (en) | 1984-07-18 | 1984-07-18 | Amorphous magnetic alloy applied sensor detection method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6128830A JPS6128830A (en) | 1986-02-08 |
| JPH0448177B2 true JPH0448177B2 (en) | 1992-08-06 |
Family
ID=15461031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14880284A Granted JPS6128830A (en) | 1984-06-08 | 1984-07-18 | Amorphous magnetic alloy applied sensor detection method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6128830A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3122693C2 (en) * | 1981-06-06 | 1987-04-23 | Basf Ag, 6700 Ludwigshafen | Process for consolidating rocks and/or coal with themselves or other geological formations |
| JP5091555B2 (en) * | 2007-06-22 | 2012-12-05 | 本田技研工業株式会社 | Magnetostrictive torque sensor and electric power steering apparatus |
-
1984
- 1984-07-18 JP JP14880284A patent/JPS6128830A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6128830A (en) | 1986-02-08 |
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