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JPH0450733B2 - - Google Patents
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JPH0450733B2 - - Google Patents

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Publication number
JPH0450733B2
JPH0450733B2 JP58030833A JP3083383A JPH0450733B2 JP H0450733 B2 JPH0450733 B2 JP H0450733B2 JP 58030833 A JP58030833 A JP 58030833A JP 3083383 A JP3083383 A JP 3083383A JP H0450733 B2 JPH0450733 B2 JP H0450733B2
Authority
JP
Japan
Prior art keywords
light
workpiece
periphery
wafer
irradiation device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58030833A
Other languages
Japanese (ja)
Other versions
JPS59158520A (en
Inventor
Sachiosa Moriwaki
Kosuke Ooshio
Motoi Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58030833A priority Critical patent/JPS59158520A/en
Publication of JPS59158520A publication Critical patent/JPS59158520A/en
Publication of JPH0450733B2 publication Critical patent/JPH0450733B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/24Curved surfaces

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は被加工物の周縁に沿つて光を縁取り状
に照射する照射装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an irradiation device that irradiates light along the periphery of a workpiece in a border shape.

〔発明の技術的背景とその問題点〕 半導体装置の製造工程において、薄い円板状の
半導体部材からなる、いわゆるウエハにフオトレ
ジスト(以下レジストと称す)を塗布した後、ソ
フトベーク、露光、現像などが行なわれる。この
間ウエハは搬送に際して、必要に応じて搬送器に
収容されて運ばれるが、ソフトベーク以後は搬送
器との接触によりウエハ周縁のレジストが剥離
し、これが飛散付着して不良品となることがしば
しば生じる。特に近時露光の線幅が狭く、半導体
装置の高密度化にともなつて、これによる歩留り
低下は大きな問題となつている。
[Technical background of the invention and its problems] In the manufacturing process of semiconductor devices, a so-called wafer made of a thin disk-shaped semiconductor member is coated with a photoresist (hereinafter referred to as resist), and then subjected to soft baking, exposure, and development. etc. will be carried out. During this time, the wafer is transported by being accommodated in a carrier as necessary, but after soft baking, the resist around the wafer's periphery peels off due to contact with the carrier, and this often scatters and adheres, resulting in defective products. arise. Particularly in recent years, as the line width of exposure has become narrower and the density of semiconductor devices has increased, the resulting reduction in yield has become a major problem.

これを解決する方法としてソフトベーク前、ウ
エハの周縁に沿つて縁取り状にレジストを除去す
ることが考えられている。これは例えば回転する
ウエハの周縁部にレジストを除去する処理液を吹
きつけてレジストを除去している。しかしこの方
法は、周縁部の一部を直線状に切欠いて形成した
部分、いわゆるオリエンテーシヨンフラツト(以
下オリフラと称す)の部分の周縁部のレジストを
除去することが困難であるという不都合がある。
また回転しているウエハの周縁部を露光して現像
除去する方法も考えられるが、これも前の方法と
同様にオリフラの部分は露光できにくいという不
都合があり、不規則な形状の周縁をもつた被加工
物に対しても、この周縁に追従して、能率よく縁
取り状に光を照射できる照射装置が要望されてい
た。
As a way to solve this problem, it has been considered to remove the resist in a border-like manner along the periphery of the wafer before soft baking. For example, the resist is removed by spraying a processing liquid for removing the resist onto the peripheral edge of the rotating wafer. However, this method has the disadvantage that it is difficult to remove the resist from the peripheral edge of the so-called orientation flat (hereinafter referred to as orientation flat), which is formed by cutting out a part of the peripheral edge in a straight line. be.
Another possibility is to expose the periphery of the rotating wafer to light and develop and remove it, but like the previous method, this method also has the disadvantage that it is difficult to expose the orientation flat part, and the wafer has an irregularly shaped periphery. There is a need for an irradiation device that can follow the periphery of a workpiece and efficiently irradiate it with light in a border shape.

〔発明の目的〕[Purpose of the invention]

本発明は上述の不都合を除去するためになされ
たもので、被加工物の周縁が不規則な形状をして
いても、これに沿つて縁取り状に被加工物を作業
性よく照射する照射装置を提供することを目的と
する。
The present invention has been made in order to eliminate the above-mentioned disadvantages, and is an irradiation device that irradiates the workpiece in a border-like manner with good workability even if the peripheral edge of the workpiece has an irregular shape. The purpose is to provide

〔発明の概要〕[Summary of the invention]

本発明は、被加工物の周縁の一部に対向して設
けられてしかも周縁の内側と外側にわたつて臨む
ように形成された受光部および同様な射光部をも
ちかつ受光部から入つた光が所定距離だけ内側に
射光部から射出される光学系と、これら光学系と
は被加工物の反対側の面から射出され、一部が被
加工物により遮光されて受光部に入射する投射光
を射出する光源装置と、投射光が入射した光学系
をほぼ周縁に沿つてこれに対して相対移動させる
移動手段とを設けて構成されていて、周縁を境に
してその外側を通つて光学系に入つた投射光を所
定距離内側に射出し、同時に光学系を相対的に移
動させることにより、常に周縁に追従して縁取り
状に被加工物を照射する照射装置である。
The present invention has a light-receiving section that is provided facing a part of the periphery of a workpiece and is formed so as to face the inside and outside of the periphery, and a similar light-emitting section, and that receives light entering from the light-receiving section. An optical system in which the light is emitted from the light emitting part inward by a predetermined distance, and a projection light that is emitted from the opposite surface of the workpiece and is partially blocked by the workpiece and enters the light receiving part. A light source device that emits the projected light, and a moving means that moves the optical system into which the projected light enters relatively along the periphery, and the optical system passes through the outside of the periphery. This is an irradiation device that emits the projected light that has entered the workpiece a predetermined distance inward, and at the same time moves the optical system relatively, thereby always following the periphery and irradiating the workpiece in a border shape.

〔発明の実施例〕[Embodiments of the invention]

以下本発明の詳細を図示の実施例を参照して説
明する。第1図ないし第3図は第1の実施例を示
すもので、1はウエハで、上面2には塗布後ソフ
トベークされたレジスト被膜3が付着しており、
また周縁4の一部を切欠いて形成されたオリフラ
5が設けられている。本実施例は、この周縁4に
沿つて縁取り状に光を投射してウエハ1の周縁部
のレジスト被膜3を除去するのに本発明を適用し
たものである。11は平板状の基台で、これに軸
受ブラケツト12を介して回転自在にウエハチヤ
ツク13が支持されている。このウエハチヤツク
13は、図示を省略してある真空装置に連結され
た真空チヤツクで構成されていて、減圧によりウ
エハ1を保持し、基台11の下方に設けられた図
示しない駆動機構により回転される。なおこれら
軸受ブラケツト12、ウエハチヤツク13、駆動
機構などで移動手段14を構成している。15は
光源装置で、支持スタンド16とこれに支持され
た投光体17とからなつていて、投光体17は内
部の図示を省略してあるが、例えば電球などの光
源と集光光学系とからなつていて、先端からリボ
ン状の投射光18がウエハ1の裏面側からその周
縁4近傍に射出される。20は光学装置で、これ
は基台11に立設された支持スタンド21にL字
状の第1部材22をその一辺がウエハ1の中心の
方に向けて取付け、他辺に上記一辺と平行に第2
部材23を位置調節自在に取付け、これら両部材
22,23に光学系24としてのオプチカルフア
イバ束25の両端を貫通支持させて構成されてい
る。このオプチカルフアイバ束25は複数本のオ
プチカルフアイバ25a,25b,…25nから
なつていて、第1部材22を貫通した下端部と第
2部材23を貫通した下端部とにおいて、各オプ
チカルフアイバ25a,…25nはその配列の順
序がウエハ1中心の側からみて全く同じ順序に形
成されている。そして第1部材22に保持された
下端部は受光部26となつて投光体17に臨んで
おり、第2部材23に保持された下端部は射光部
27になつている。これら受光部26、射光部2
7は周縁4の内側および外側に十分長く周縁4を
またぐように形成されていて、投光体17からの
投射光18はウエハ1により一部遮光され周縁4
より外側の投射光18のみが受光部26に入射
し、射光部27から射出される。従つて第2部材
23を移動させて射出部27を受光部26より距
離fだけウエハ1中心側に近づけておくと、周縁
4から内側に距離fまでの間が照射される。31
は側部投射装置で、ウエハ1の側面5に対向して
設けられたオプチカルフアイバ束32と、これに
投射光33を送る側面投光体34と、基台11に
立設されて側面投光体34を支持する支持スタン
ド35とから構成されている。側面投光体34は
投光体17と同様な構成なので説明を省略する。
The details of the present invention will be explained below with reference to the illustrated embodiments. 1 to 3 show a first embodiment, in which 1 is a wafer, and a resist film 3 that is soft-baked after application is attached to the upper surface 2;
Further, an orientation flat 5 formed by cutting out a part of the peripheral edge 4 is provided. In this embodiment, the present invention is applied to removing the resist film 3 at the peripheral edge of the wafer 1 by projecting light in a border pattern along the peripheral edge 4. Reference numeral 11 denotes a flat base, on which a wafer chuck 13 is rotatably supported via a bearing bracket 12. The wafer chuck 13 is composed of a vacuum chuck connected to a vacuum device (not shown), holds the wafer 1 under reduced pressure, and is rotated by a drive mechanism (not shown) provided below the base 11. . Note that the bearing bracket 12, wafer chuck 13, drive mechanism, etc. constitute a moving means 14. Reference numeral 15 denotes a light source device, which consists of a support stand 16 and a light emitter 17 supported by the support stand 16. Although the inside of the light emitter 17 is not shown, it includes a light source such as a light bulb and a condensing optical system. A ribbon-shaped projection light 18 is emitted from the tip of the wafer 1 from the back side of the wafer 1 to the vicinity of the peripheral edge 4 thereof. Reference numeral 20 denotes an optical device, in which an L-shaped first member 22 is attached to a support stand 21 erected on a base 11 with one side thereof facing toward the center of the wafer 1, and the other side parallel to the above-mentioned one side. second to
A member 23 is attached so as to be adjustable in position, and both ends of an optical fiber bundle 25 serving as an optical system 24 are passed through and supported by both members 22 and 23. The optical fiber bundle 25 is composed of a plurality of optical fibers 25a, 25b, . . . 25n, and each optical fiber 25a, . 25n are formed in exactly the same order as viewed from the center of the wafer 1. The lower end portion held by the first member 22 serves as a light receiving portion 26 and faces the light emitter 17, and the lower end portion held by the second member 23 serves as a light emitting portion 27. These light receiving section 26, light emitting section 2
7 is formed on the inside and outside of the peripheral edge 4 with a sufficiently long length so as to straddle the peripheral edge 4, and the projected light 18 from the light projecting body 17 is partially blocked by the wafer 1,
Only the outer projection light 18 enters the light receiving section 26 and is emitted from the light emitting section 27. Therefore, if the second member 23 is moved to bring the emitting section 27 closer to the center of the wafer 1 by a distance f than the light receiving section 26, the area from the periphery 4 inward to the distance f will be irradiated. 31
1 is a side projection device, which includes an optical fiber bundle 32 provided facing the side surface 5 of the wafer 1, a side light projector 34 that sends projection light 33 to the optical fiber bundle 32, and a side light projector 34 erected on a base 11. The support stand 35 supports the body 34. The side light projector 34 has the same configuration as the light projector 17, so a description thereof will be omitted.

次に本実施例の作動につき説明する。まず受光
部26に対し、射光部27を所定量f(レジスト
被膜3を除去する半径方向の距離)だけ内側に突
出させて固定する。次にレジスト被膜3を設けた
ウエハ1をウエハチヤツク3上にほぼ同心状に載
置し、低速で回転させる。次に投光体17、側面
投光体34を作動させると、第3図に示すよう
に、投射光18は一部ウエハ1の裏面で遮ぎられ
て周縁4より外側の投射光18は受光部26に入
射し、射光部27よりウエハ1のレジスト被膜3
上を照射する。このとき投射光18は周縁4から
内側へ距離fに到るまでの間を照射し、回転によ
り周縁4の位置、形状が、例えばオリフラ5とか
偏心などにより変化しても、常に遮光する周縁4
から距離fまでの間を縁取り状に露光する。また
同時に側面投光体34からの投射光33によりウ
エハ1側面のレジスト被膜3も露光される。所定
時間の露光が終つたらウエハ1を取り外し、次の
処理工程により露光部のレジスト被膜3を除去す
る。
Next, the operation of this embodiment will be explained. First, the light emitting part 27 is fixed to the light receiving part 26 so as to protrude inward by a predetermined amount f (the distance in the radial direction for removing the resist film 3). Next, the wafer 1 provided with the resist film 3 is placed substantially concentrically on the wafer chuck 3 and rotated at a low speed. Next, when the light projector 17 and the side light projector 34 are activated, as shown in FIG. The light enters the resist film 3 of the wafer 1 from the light emitting part 27.
Irradiate the top. At this time, the projected light 18 irradiates inward from the peripheral edge 4 up to a distance f, and even if the position and shape of the peripheral edge 4 change due to rotation, for example due to the orientation flat 5 or eccentricity, the peripheral edge 4 always blocks light.
The area between the distance f and the distance f is exposed in a border pattern. At the same time, the resist film 3 on the side surface of the wafer 1 is also exposed by the projected light 33 from the side light projector 34. After the exposure for a predetermined time is completed, the wafer 1 is removed, and the resist film 3 in the exposed area is removed in the next processing step.

次に第4図、第5図は第2の実施例の構成を示
すもので、光学系24のみが第1の実施例と相違
しているので、これについて説明する。本実施例
はウエハ1の周縁4に対向して設けられた受光部
としての2個の同一楔状のプリズム41,42
と、これの上部に設けられた射光部としての全反
射プリズム43とで光学系45が形成されてい
る。投射光18の中の周縁4より外側のものはプ
リズム41,42を透過し、その際第5図に示す
ように距離fだけ周縁4より内側に平行移動し、
全反射プリズム43で再び下降してレジスト被膜
3を照射する。距離fの調節はプリズム41,4
2を相対的に移動させることにより行なわれる。
Next, FIGS. 4 and 5 show the configuration of the second embodiment, and since only the optical system 24 is different from the first embodiment, this will be explained. In this embodiment, two identical wedge-shaped prisms 41 and 42 are provided as light-receiving sections on the periphery 4 of the wafer 1.
An optical system 45 is formed by a total reflection prism 43 as a light emitting section provided above the prism. The portion of the projected light 18 that is outside the periphery 4 passes through the prisms 41, 42, and is translated inward from the periphery 4 by a distance f as shown in FIG.
The total reflection prism 43 descends again to irradiate the resist film 3. The distance f is adjusted using prisms 41 and 4.
This is done by moving the two relatively.

なお第1の実施例および第2の実施例の説明に
おいては、受光部26と投射部27の間隔は理解
を容易にするため相当大きく図示してあるが、距
離fの精度を十分保つためには極力接近して設け
ることが必要である。
In the explanation of the first embodiment and the second embodiment, the distance between the light receiving section 26 and the projection section 27 is illustrated in a considerably large size for easy understanding, but in order to maintain sufficient accuracy of the distance f, It is necessary to provide them as close as possible.

〔発明の効果〕〔Effect of the invention〕

以上詳述したように本発明の照射装置は、その
光学系の受光部に対して射光部を被加工物の周縁
より所定量内側に偏位させて構成したので、常に
遮光する周縁に沿つて縁取り状に被加工物を照射
することができるから、周縁が不規則な形状をし
たり、あるいは被加工物が偏心して回転したりし
ても、何ら支障なく所望の照射を行なうことがで
きる効果を奏するものである。
As described in detail above, the irradiation device of the present invention is configured such that the light emitting part is shifted inward by a predetermined amount from the periphery of the workpiece with respect to the light receiving part of the optical system, so that the irradiation device is configured such that the light emitting part is shifted inward by a predetermined amount from the periphery of the workpiece. Since the workpiece can be irradiated in a border-shaped manner, the desired irradiation can be performed without any problems even if the peripheral edge is irregular or the workpiece rotates eccentrically. It is something that plays.

なお本実施例においては、ウエハのレジスト被
膜の除去の場合を例に説明したが、これに限定さ
れるものではなく、各種加工の照射装置として使
用してもよい。
In this embodiment, the case of removing a resist film on a wafer has been described as an example, but the present invention is not limited to this, and may be used as an irradiation device for various processing.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の第1の実施例の平面図、第2
図は同じく正面図、第3図は被加工物の被照射状
態を説明する要部断面拡大図、第4図は本発明の
第2の実施例の正面図、第5図は同じく要部拡大
側面図である。 1……被加工物、4……周縁、14……移動手
段、15……光源装置、18……投射光、24,
45……光学系、25……光フアイバ束、26…
…受光部、27……射光部。
FIG. 1 is a plan view of the first embodiment of the present invention, and FIG.
The figure is a front view, FIG. 3 is an enlarged cross-sectional view of the main part explaining the irradiation state of the workpiece, FIG. 4 is a front view of the second embodiment of the present invention, and FIG. 5 is an enlarged main part. FIG. 1... Workpiece, 4... Periphery, 14... Moving means, 15... Light source device, 18... Projection light, 24,
45...Optical system, 25...Optical fiber bundle, 26...
...Light receiving section, 27... Light emitting section.

Claims (1)

【特許請求の範囲】 1 板状の被加工物の周縁に光を縁取り状に照射
する照射装置において、上記被加工物の一方の主
面に対向して設けられ上記光を上記被加工物の周
縁に投射する第1投光体と、上記被加工物の他方
の主面側の周縁に設けられ上記第1投光体からの
光のうち上記被加工物により遮られなかつた光を
受光する受光部及びこの受光した光を上記被加工
物の内側方向に所定量偏位させる偏位部およびこ
の偏位部にて偏位した光を上記被加工物の他方の
主面側の周縁に投射する射光部からなる光学系
と、上記第1投光体による光の投射方向にほぼ直
交する方向から上記上記被加工物の側面に光を投
射する第2投光体と、上記光学系を上記被加工物
の周縁に沿いかつこれに対して相対移動させる移
動手段とを具備したことを特徴とする照射装置。 2 光学系は光フアイバ束を備えていることを特
徴とする特許請求の範囲第1項記載の照射装置。
[Scope of Claims] 1. An irradiation device that irradiates the peripheral edge of a plate-shaped workpiece with light in a border shape, which is provided opposite to one main surface of the workpiece and directs the light to the periphery of the workpiece. A first light projector that projects onto the periphery, and a light projector that is provided on the periphery of the other main surface side of the workpiece and receives light that is not blocked by the workpiece out of the light from the first light projector. a light receiving section, a deflection section that deflects the received light by a predetermined amount inward of the workpiece, and projects the light deflected by the deflection section onto the periphery of the other main surface side of the workpiece. a second light projector that projects light onto the side surface of the workpiece from a direction substantially perpendicular to the direction in which light is projected by the first light projector; 1. An irradiation device comprising a moving means for moving a workpiece along and relative to the circumference thereof. 2. The irradiation device according to claim 1, wherein the optical system includes an optical fiber bundle.
JP58030833A 1983-02-28 1983-02-28 Irradiating device Granted JPS59158520A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58030833A JPS59158520A (en) 1983-02-28 1983-02-28 Irradiating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58030833A JPS59158520A (en) 1983-02-28 1983-02-28 Irradiating device

Publications (2)

Publication Number Publication Date
JPS59158520A JPS59158520A (en) 1984-09-08
JPH0450733B2 true JPH0450733B2 (en) 1992-08-17

Family

ID=12314698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58030833A Granted JPS59158520A (en) 1983-02-28 1983-02-28 Irradiating device

Country Status (1)

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JP (1) JPS59158520A (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6173330A (en) * 1984-09-18 1986-04-15 Nec Corp Equipment for manufacturing semiconductor device
JPS62128121A (en) * 1985-11-28 1987-06-10 Fujitsu Ltd Manufacture of semiconductor device
JP2674746B2 (en) * 1986-02-20 1997-11-12 日本電気株式会社 Semiconductor manufacturing equipment
JPS63133527A (en) * 1986-11-25 1988-06-06 Nec Corp Exposure prealignment device
JPS63160332A (en) * 1986-12-24 1988-07-04 Mitsubishi Electric Corp Resist-removing system
JPS63258019A (en) * 1987-04-15 1988-10-25 Nec Kyushu Ltd Resistering aligner
KR960016175B1 (en) * 1987-08-28 1996-12-04 Tokyo Electron Ltd Exposing method and apparatus thereof
JPH0797549B2 (en) * 1987-08-28 1995-10-18 東京エレクトロン九州株式会社 Exposure method and apparatus thereof
JP2567005B2 (en) * 1987-12-21 1996-12-25 大日本スクリーン製造株式会社 Wafer edge exposure device
JP2623495B2 (en) * 1988-01-22 1997-06-25 ウシオ電機株式会社 Method and apparatus for removing unnecessary resist
JP2668537B2 (en) * 1988-01-27 1997-10-27 東京エレクトロン株式会社 Resist processing apparatus and resist processing method
JPH0795516B2 (en) * 1988-01-29 1995-10-11 ウシオ電機株式会社 Wafer periphery exposure method and apparatus
JPH0273621A (en) * 1988-09-09 1990-03-13 Ushio Inc Exposing method for periphery of wafer
JP2601335B2 (en) * 1988-10-25 1997-04-16 ウシオ電機株式会社 Wafer periphery exposure system
JPH0795517B2 (en) * 1988-10-25 1995-10-11 ウシオ電機株式会社 Wafer edge exposure method
JPH0795518B2 (en) * 1988-10-25 1995-10-11 ウシオ電機株式会社 Wafer edge exposure unit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57100730A (en) * 1980-12-16 1982-06-23 Nec Corp Manufacture of semiconductor device
JPS57126134A (en) * 1981-01-28 1982-08-05 Nec Corp Processing system for wafer

Also Published As

Publication number Publication date
JPS59158520A (en) 1984-09-08

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