JPH0451055B2 - - Google Patents
Info
- Publication number
- JPH0451055B2 JPH0451055B2 JP61113071A JP11307186A JPH0451055B2 JP H0451055 B2 JPH0451055 B2 JP H0451055B2 JP 61113071 A JP61113071 A JP 61113071A JP 11307186 A JP11307186 A JP 11307186A JP H0451055 B2 JPH0451055 B2 JP H0451055B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- aluminum
- semiconductor device
- titanium nitride
- bonding pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/981—Auxiliary members, e.g. spacers
- H10W72/983—Reinforcing structures, e.g. collars
Landscapes
- Wire Bonding (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置に係わり、特に半導体素
子上に形成されるボンデイングバツドの構造に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to the structure of a bonding pad formed on a semiconductor element.
第５図は従来の半導体装置を構成する半導体素
子のボンデイングパツド部を示す断面図である。
同図において、１はシリコン基板、２はこの上に
形成されたフイールド酸化膜、３は二酸化硅素膜
（（PSG膜）、４はアルミニウム蒸着膜、５はアル
ミニウム蒸着膜４上のボンデイング部のみ開孔部
を設けた絶縁保護膜である。
FIG. 5 is a sectional view showing a bonding pad portion of a semiconductor element constituting a conventional semiconductor device.
In the figure, 1 is a silicon substrate, 2 is a field oxide film formed thereon, 3 is a silicon dioxide film (PSG film), 4 is an aluminum vapor deposited film, and 5 is an open bonding portion only on the aluminum vapor deposited film 4. This is an insulating protective film with holes.
従来の半導体装置は、以上のような構造を有し
ているので、PSG膜３中の不純物、特にリンの
アルミニウム膜４中への拡散が起こり、初期ボン
デイング性の低下、金−アルミニウム合金の早期
劣化あるいは水分の浸入により、リン酸が発生し
アルミニウム膜を腐食させる耐湿性不良を引き起
こすなどの問題点があつた。
Since the conventional semiconductor device has the above structure, impurities in the PSG film 3, especially phosphorus, diffuse into the aluminum film 4, resulting in deterioration of initial bonding properties and early formation of gold-aluminum alloy. There were problems such as phosphoric acid being generated due to deterioration or moisture infiltration, causing poor moisture resistance that corroded the aluminum film.
本発明は、上記のような問題点を解決するため
になされたもので、初期ボンデイング性の低下を
防げるとともに、膜の界面を通じて浸入した水と
PSG膜中のリンとの反応を防止すことが出来、
さらに金−アルミニウム合金層に悪影響を及ぼす
リンの拡散を防ぐことが出来る半導体装置を得る
ことを目的とする。 The present invention was made in order to solve the above-mentioned problems, and can prevent the initial bonding performance from deteriorating, as well as prevent water from entering through the membrane interface.
It is possible to prevent reaction with phosphorus in the PSG film,
Furthermore, another object of the present invention is to obtain a semiconductor device that can prevent diffusion of phosphorus, which has an adverse effect on the gold-aluminum alloy layer.
本発明に係る半導体装置は、リンを含有する二
酸化硅素膜とアルミニウム膜との間に、アルミニ
ウム膜の形状と同等もしくはそれよりも大きいチ
タンナイトライド膜を形成したものである。
In the semiconductor device according to the present invention, a titanium nitride film having a shape equal to or larger than that of the aluminum film is formed between a silicon dioxide film containing phosphorus and an aluminum film.
本発明におけるチタンナイトライド膜は、
PSG膜中に含まれる不純物のアルミニウム膜へ
の拡散および水分の浸入を軽減させる。
The titanium nitride film in the present invention is
It reduces the diffusion of impurities contained in the PSG film into the aluminum film and the infiltration of moisture.
以下、図面を用いて本発明の実施例を詳細に説
明する。
Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は本発明による半導体装置の一実施例を
示す半導体素子のボンデイングパツド部の要部断
面図であり、前述の図と同一部分には同一符号を
付してある。同図において、リンを含有する
PSG膜３とボンデイングパツドを形成するアル
ミニウム膜４との間にはチタンナイトライド膜６
が形成配置されている。この場合、このチタンナ
イトライド膜６は第２図に平面図で示すようにア
ルミニウム膜４とほぼ同等の外形形状を有して形
成されている。 FIG. 1 is a sectional view of a main part of a bonding pad portion of a semiconductor element showing an embodiment of a semiconductor device according to the present invention, and the same parts as in the previous figures are given the same reference numerals. In the same figure, containing phosphorus
A titanium nitride film 6 is provided between the PSG film 3 and the aluminum film 4 forming the bonding pad.
are arranged in formation. In this case, the titanium nitride film 6 is formed to have approximately the same external shape as the aluminum film 4, as shown in a plan view in FIG.
このような構成によれば、チタンナイトライド
膜６がバリアメタルとして作用し、PSG膜３中
に含有されているリン等の不純物のアルミニウム
膜４中への拡散を防止することができるととも
に、PSG膜３への水分の浸入を防止することが
できる。 According to such a configuration, the titanium nitride film 6 acts as a barrier metal and can prevent impurities such as phosphorus contained in the PSG film 3 from diffusing into the aluminum film 4. Infiltration of moisture into the membrane 3 can be prevented.
第３図は本発明の他の実施例を示すボンデイン
グパツド部の要部断面図であり、前述の図と同一
部分には同一符号を付してある。同図において、
第１図と異なる点は、PSG膜３とアルミニウム
膜４との間に形成されるチタンナイトライド膜６
は、第４図に平面図で示すようにアルミニウム膜
４の外形形状よりも大きくして形成されている。 FIG. 3 is a sectional view of a main part of a bonding pad section showing another embodiment of the present invention, and the same parts as in the previous figures are given the same reference numerals. In the same figure,
The difference from FIG. 1 is that the titanium nitride film 6 is formed between the PSG film 3 and the aluminum film 4.
is formed to be larger than the external shape of the aluminum film 4, as shown in a plan view in FIG.
このような構成によれば、PSG膜３中に含有
されているリン酸等の不純物のアルミニウム膜４
中への拡散およびPSG膜３への水分の浸入をさ
らに確実に防止することができる。 According to such a configuration, the aluminum film 4 contains impurities such as phosphoric acid contained in the PSG film 3.
Diffusion into the interior and infiltration of moisture into the PSG film 3 can be more reliably prevented.
以上説明したように本発明によれば、ボンデイ
ングパツド部をPSG膜とアルミニウム膜との間
にチタンナイトライド膜を設けたことにより、
PSG膜中の不純物のアルミニウム膜への拡散お
よびPSG膜中への水分の浸入を防止できるので、
ボンデイング性の向上がはかれ、金−アルミニウ
ム接合部の早期劣化を防ぐことができ、したがつ
て半導体素子の長期にわたる信頼性を確保するこ
とができるという極めて優れた効果が得られる。
As explained above, according to the present invention, by providing the titanium nitride film between the PSG film and the aluminum film in the bonding pad part,
This prevents impurities in the PSG film from diffusing into the aluminum film and preventing moisture from entering the PSG film.
The extremely excellent effect of improving bonding properties, preventing early deterioration of the gold-aluminum joint, and ensuring long-term reliability of the semiconductor device is achieved.
第１図は本発明による半導体装置の一実施例を
示す半導体素子のボンデイングパツド部の要部断
面図、第２図は第１図の要部平面図、第３図は本
発明の他の実施例を示す半導体素子のボンデイン
グパツド部の要部断面図、第４図は第３図の要部
平面図、第５図は従来の半導体素子のボンデイン
グパツド部の要部断面図である。
１……シリコン半導体基板、２……フイールド
酸化膜３……リンを含有する二酸硅素膜（PSG
膜）、４……アルミニウム膜、５……絶縁保護膜、
６……チタンナイトライド膜。
FIG. 1 is a cross-sectional view of a main part of a bonding pad portion of a semiconductor element showing one embodiment of a semiconductor device according to the present invention, FIG. 2 is a plan view of the main part of FIG. 1, and FIG. FIG. 4 is a sectional view of a main part of a bonding pad portion of a semiconductor device showing an embodiment, FIG. 4 is a plan view of a main part of FIG. 3, and FIG. 5 is a sectional view of a main part of a bonding pad portion of a conventional semiconductor device. . 1...Silicon semiconductor substrate, 2...Field oxide film 3...Silicon dioxide film containing phosphorus (PSG)
film), 4...aluminum film, 5...insulating protective film,
6...Titanium nitride film.
Claims (1)
形成しさらにその上に形成されるリンを含有する
二酸化硅素膜とボンデイングパツドのアルミニウ
ム膜との間にチタンナイトライド膜を形成するこ
とを特徴とする半導体装置。 ２ チタンナイトライド膜をアルミニウム膜の外
形形状よりも大きく形成したことを特徴とする特
許請求の範囲第１項記載の半導体装置。[Claims] 1. A field oxide film is formed on a silicon semiconductor substrate, and a titanium nitride film is further formed between the phosphorus-containing silicon dioxide film formed thereon and the aluminum film of the bonding pad. A semiconductor device characterized by: 2. The semiconductor device according to claim 1, wherein the titanium nitride film is formed larger than the outer shape of the aluminum film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61113071A JPS62269332A (en) | 1986-05-16 | 1986-05-16 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61113071A JPS62269332A (en) | 1986-05-16 | 1986-05-16 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62269332A JPS62269332A (en) | 1987-11-21 |
| JPH0451055B2 true JPH0451055B2 (en) | 1992-08-18 |
Family
ID=14602755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61113071A Granted JPS62269332A (en) | 1986-05-16 | 1986-05-16 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62269332A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6508601B2 (en) * | 2014-08-11 | 2019-05-08 | パナソニックＩｐマネジメント株式会社 | Semiconductor device |
| TWI791590B (en) * | 2017-08-14 | 2023-02-11 | 美商瓦特隆電子製造公司 | Method for joining quartz pieces and quartz electrodes and other devices of joined quartz |
-
1986
- 1986-05-16 JP JP61113071A patent/JPS62269332A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62269332A (en) | 1987-11-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |