JPH0453271B2 - - Google Patents
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- Publication number
- JPH0453271B2 JPH0453271B2 JP25652584A JP25652584A JPH0453271B2 JP H0453271 B2 JPH0453271 B2 JP H0453271B2 JP 25652584 A JP25652584 A JP 25652584A JP 25652584 A JP25652584 A JP 25652584A JP H0453271 B2 JPH0453271 B2 JP H0453271B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- light
- current
- semiconductor
- photovoltaic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Testing Of Individual Semiconductor Devices (AREA)
Description
【発明の詳細な説明】
本発明は、光を受けて起電力を発生する光起電
力半導体の電圧電流特性の測定方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for measuring voltage-current characteristics of a photovoltaic semiconductor that generates electromotive force upon receiving light.
太陽電池モシユールとして使用される光起電力
半導体のような半導体における電圧電流特性の測
定においては、従来は当該半導体に擬似太陽光の
定常光を連続して照射して行われていた。即ち、
半導体に定常光を一様な照度で連続して照射した
状態において、半導体に加える電圧をゆつくり変
化せしめながら各電圧点における電流値をブロツ
クして電圧電流特性を測定していた。しかし、こ
のように定常光を用いる測定においては、定常光
を連続して照射するため消費電力が大きなものと
なり、そして近時は、例えば光起電力半導体を平
面状に並べて大きさが1.5×1.0m2の太陽電池も実
用化されているが、この様な大面積を照射するた
めには定常光発生装置として光出力が大きくて大
型のものを設計しなければならず、併せて太陽電
池の温度上昇を避けることができないため恒温化
装置が必要とされ、コストも非常に高いものにな
つてしまう。 BACKGROUND ART Conventionally, voltage-current characteristics of a semiconductor such as a photovoltaic semiconductor used as a solar cell module have been measured by continuously irradiating the semiconductor with constant light of simulated sunlight. That is,
The voltage-current characteristics were measured by continuously irradiating the semiconductor with steady light at a uniform illuminance, and by slowly changing the voltage applied to the semiconductor and blocking the current value at each voltage point. However, in measurements using constant light, the power consumption is large because the constant light is continuously irradiated, and recently, for example, photovoltaic semiconductors are arranged in a plane and the size is 1.5 x 1.0. m 2 solar cells have also been put into practical use, but in order to irradiate such a large area, it is necessary to design a large constant light generator with a high light output. Since temperature rise cannot be avoided, a constant temperature device is required, and the cost becomes extremely high.
このため最近においては、この特性の測定のた
めに、瞬間的に十分大きな光出力が得られる閃光
放電灯が用いられるようになつている。つまり、
第１図に示すように光起電力半導体PDに閃光放
電灯１０より時間巾が1.5ｍsec程度の閃光パルス
を照射し、電圧源１１により光起電力半導体PD
の電極Ａ、Ｂ間に例えば０ボルトから当該光起電
力半導体PDの起電力程度までの電圧を時間的に
変化せしめながら印加し、電極Ａ、Ｂ間に接続し
て設けた電流測定器１２により電流値の変化を測
定し、第２図に示すようなＩ−Ｖ特性曲線を得
る。このとき、各電圧点における電流値がプロツ
トされるが、例えばプロツト点数を64個とすれ
ば、パルスの時間巾が1.5ｍsec程度であるので１
プロツトあたりの照射時間は0.02ｍsec程度であ
る。 For this reason, recently, flash discharge lamps that can instantaneously provide a sufficiently large light output have been used to measure this characteristic. In other words,
As shown in FIG. 1, a flash pulse with a duration of about 1.5 msec is irradiated from a flash discharge lamp 10 to a photovoltaic semiconductor PD, and a voltage source 11 is used to irradiate a photovoltaic semiconductor PD.
A voltage from, for example, 0 volts to about the electromotive force of the photovoltaic semiconductor PD is applied between the electrodes A and B while changing over time, and a current measuring device 12 connected between the electrodes A and B is used. The change in current value is measured to obtain an IV characteristic curve as shown in FIG. At this time, the current value at each voltage point is plotted. For example, if the number of plot points is 64, the time width of the pulse is about 1.5 msec, so the current value at each voltage point is plotted.
The irradiation time per plot is about 0.02 msec.
ところで、従来の光起電力半導体PDは単結晶
シリコンからなるために、光起電力の応答速度が
早く、前述の通り照射時間が0.02ｍsec程度と短
かくても、印加電圧に対して生起電流が十分に応
答し、正確な特性曲線を得ることができる。しか
しながら、近時はアモルフアスシリコンの製造技
術の進歩もあつて、アモルフアスシリコンからな
る光起電力半導体が多用されるようになつたが、
これは単結晶シリコンからなるものに比べて応答
速度が遅い。従つて、１プロツトあたりの照射時
間が単結晶シリコンからなるもののように0.02ｍ
sec程度では、第２図の点線曲線で示すように電
流値が実際よりも低くなり、正確な特性曲線を得
ることができない。このためプロツト数を少なく
すると１プロツトあたりの照射時間を長くするこ
とができるが、これでは特性曲線が直線近似とな
つて精度が低下する。従つて、プロツト数を減少
させることなく１プロツトあたりの照射時間を長
くする必要があるが、アモルフアスシリコンから
なる光起電力半導体の場合は、１プロツトあたり
の照射時間は0.5ｍsec以上、プロツト数も200点
以上が望ましいとされており、結局、閃光放電の
パルスの時間巾は20ｍsec以上が必要となる。し
かしながら、大型の太陽電池に対して、この様に
長時間巾にわたつて一定照度のパルス点灯を閃光
放電灯により行うには、十数KWの大型ランプが
必要となり、電源トランスや光学系などの附帯設
備もこれに併つて大型となつてしまい、とても実
用化することは不可能である。 By the way, since conventional photovoltaic semiconductor PDs are made of single crystal silicon, the response speed of the photovoltaic force is fast, and as mentioned above, even if the irradiation time is as short as about 0.02 msec, the generated current is small relative to the applied voltage. Fully responsive and accurate characteristic curves can be obtained. However, in recent years, with advances in amorphous silicon manufacturing technology, photovoltaic semiconductors made of amorphous silicon have come into widespread use.
This has a slower response speed than one made of single crystal silicon. Therefore, the irradiation time per one plot is 0.02 m as in the case of single crystal silicon.
sec, the current value becomes lower than the actual value as shown by the dotted line curve in FIG. 2, making it impossible to obtain an accurate characteristic curve. Therefore, if the number of plots is reduced, the irradiation time per plot can be increased, but this results in a linear approximation of the characteristic curve, resulting in a decrease in accuracy. Therefore, it is necessary to increase the irradiation time per plot without reducing the number of plots. However, in the case of photovoltaic semiconductors made of amorphous silicon, the irradiation time per plot is 0.5 msec or more, and the number of plots can be increased. It is said that 200 points or more is desirable, and as a result, the pulse duration of the flash discharge needs to be 20 msec or more. However, in order to perform pulse lighting of a large solar cell at a constant illuminance over a long period of time using a flash discharge lamp, a large lamp of more than 10 KW is required, and the power transformer, optical system, etc. Along with this, the auxiliary equipment also becomes large, making it impossible to put it into practical use.
そこで本発明は、アモルフアスシリコンからな
る光起電力半導体のように、光起電力の応答速度
の遅い光起電力半導体に対しても、小型の装置で
もつて効率よくその電圧電流特性を測定できる方
法を提供することを目的とする。そして、その構
成は、その電圧電流特性を測定すべき光起電力半
導体、例えば太陽電池のような光起電力半導体
に、キセノンシヨートクランプよりの光を照射す
るとともに、この光起電力半導体の電極間に電圧
値が時間的に変化する電圧を印加し、この電極間
における電流値変化の測定を行うことによつて光
起電力半導体の電圧電流特性を測定する方法であ
つて、前記光は、小定電流による待機点灯に重畳
された時間巾が20ｍsecないし200ｍsecのパルス
状の大電流により点灯される光であり、かつ、照
射にあたつては、待機点灯中はシヤツターに遮ら
れ、パルス状の点灯中はシヤツターが開くことを
特徴とするものである。 Therefore, the present invention provides a method for efficiently measuring the voltage-current characteristics of photovoltaic semiconductors, such as photovoltaic semiconductors made of amorphous silicon, which have a slow photovoltaic response speed using a small device. The purpose is to provide The structure is such that a photovoltaic semiconductor whose voltage-current characteristics are to be measured, for example a photovoltaic semiconductor such as a solar cell, is irradiated with light from a xenon shot clamp, and the electrodes of the photovoltaic semiconductor are irradiated with light from a xenon shot clamp. A method for measuring voltage-current characteristics of a photovoltaic semiconductor by applying a voltage whose voltage value changes over time and measuring changes in current value between the electrodes, the light comprising: It is a light that is lit by a large pulsed current with a duration of 20msec to 200msec superimposed on standby lighting by a small constant current, and when it is irradiated, it is blocked by a shutter during standby lighting, and the pulsed light is The feature is that the shutter opens while the is lit.
以下に図面に基いて本発明の実施例を具体的に
説明する。 Embodiments of the present invention will be specifically described below based on the drawings.
第３図は本発明に使用される光照射装置を模式
的に示すが、ランプ１は定格1.6KWのキセノン
シヨートアーク放電灯であり、実際には３本のラ
ンプ１が設置されている。そして、ランプ１の背
後には断面楕円形の集光鏡２が配置され、ランプ
１の光はインテグレーター３に集光される。この
インテグレーター３の前にはシヤツター４が配置
され、このシヤツター４が閉じるとランプ１の光
は遮られて外部に投射されない。インテグレータ
ー３を出射した光は平面反射板５で反射されてコ
リメーテイングレンズ６に入射し、平行光となつ
て被検体である太陽電池Ｓに投射される。この太
陽電池Ｓは寸法が1.5ｍ×0.5ｍのパネルにアモル
フアスシリコンからなる光起電力半導体モジユー
ルが平面状に配置されたものである。 FIG. 3 schematically shows the light irradiation device used in the present invention, where the lamp 1 is a xenon short arc discharge lamp with a rating of 1.6 KW, and actually three lamps 1 are installed. A condensing mirror 2 having an elliptical cross section is placed behind the lamp 1, and the light from the lamp 1 is condensed onto an integrator 3. A shutter 4 is placed in front of the integrator 3, and when the shutter 4 is closed, the light from the lamp 1 is blocked and is not projected to the outside. The light emitted from the integrator 3 is reflected by the plane reflecting plate 5, enters the collimating lens 6, becomes parallel light, and is projected onto the solar cell S, which is the subject. This solar cell S is a panel with dimensions of 1.5 m x 0.5 m, in which photovoltaic semiconductor modules made of amorphous silicon are arranged in a planar manner.
次に第４図は、キセノンシヨートアークランプ
１本あたりの入力電力の時間的変化を示したもの
であるが、このランプ１には常時0.6KWの電力
が入力され待機点灯している。この待機点灯時は
シヤツター４が閉じており、その光は外部には洩
れない。そして、電圧電流特性の測定に際して
は、シヤツター４が開き、これとほゞ同時に
5KWの電力が時間巾20ｍsec〜20ｍsecのパルス
状で待機点灯に重畳して入力される。このランプ
１の定格電力は1.6KWであるが、パルス状に入
力するので5KWの入力が可能であり、時間巾も
200ｍsec程度まで一定の照度を持続することがで
きる。因みに本実施例において、３本のランプ１
を前記の条件でパルス点灯すると、太陽電池Ｓに
対する放射照度は100ｍＷ／cm2であり、その均一
度な±５％／100ｍsecが得られた。そしてこの間
に、例えば64ポイントの太陽電池電流と電圧が第
１図の回路で測定され、温度や照度補正がなされ
てプロツトされ、Ｉ−Ｖ特性曲線が得られる。そ
して、パルス状点灯が終了するとほゞ同時にシヤ
ツター４が閉じて測定が終了する。 Next, FIG. 4 shows the temporal change in the input power per xenon short arc lamp, and this lamp 1 is constantly input with 0.6 KW of power and is lit on standby. During this standby lighting, the shutter 4 is closed and the light does not leak to the outside. When measuring the voltage-current characteristics, shutter 4 opens and almost simultaneously
5KW of power is input in the form of a pulse with a duration of 20msec to 20msec, superimposed on the standby lighting. The rated power of this lamp 1 is 1.6KW, but since the input is in pulse form, it is possible to input 5KW, and the time width is also
A constant illuminance can be maintained for up to about 200 msec. Incidentally, in this example, three lamps 1
When pulse lighting was performed under the above conditions, the irradiance to the solar cell S was 100 mW/cm 2 , and a uniformity of ±5%/100 msec was obtained. During this time, the solar cell current and voltage at, for example, 64 points are measured using the circuit shown in FIG. 1, and plotted after temperature and illuminance corrections are made to obtain an IV characteristic curve. Then, almost at the same time as the pulsed lighting ends, the shutter 4 closes and the measurement ends.
以上のような方法によれば、キセノンシヨート
アークランプを待機点灯させておいて、これにパ
ルス状電力を重畳して入力するので、トリガー電
力を必要とすることなくパルス点灯ができ、しか
も定格電力の数倍のパルス状電力を入力可能とな
る。従つて、小型のランプで高出力が可能とな
り、前記の実施例では1.6KWのランプ３本で
15KW点灯が行われ、また、ランプ小型化に併つ
て電源トランスや光学系などの附帯設備も小型と
なり、試験装置として十分に実用化可能な規模に
おさめることができる。そして、パルスの時間巾
も長くとることができるので、測定にあたつて
は、プロツト数を減少することなく１プロツトあ
たりの照射時間を長くでき、前記の実施例では
0.5ｍsec以上が可能となる。このため、光起電力
の応答速度の遅いアモルフアスシリコンからなる
半導体であつても、この照射時間内に印加電圧に
対応する電流が完全に生起し、正確なＩ−Ｖ曲線
を得ることができる。よつて、本発明によれば、
光起電力の応答速度の遅い光起電力半導体に対し
ても、小型の装置でもつて効率よくその電圧電流
特性を測定できる方法を提供することができる。 According to the method described above, the xenon short arc lamp is turned on in standby mode, and pulsed power is superimposed on it and input, so pulsed lighting can be performed without requiring trigger power, and the rated power is It becomes possible to input pulsed power several times that of the current value. Therefore, high output is possible with small lamps, and in the above example, three 1.6KW lamps are required.
15KW lighting was carried out, and as the lamp became smaller, ancillary equipment such as power transformers and optical systems were also made smaller, making it possible to keep it on a scale that could be put to practical use as a testing device. Furthermore, since the pulse duration can be made longer, the irradiation time per plot can be increased during measurement without reducing the number of plots.
0.5msec or more is possible. Therefore, even in a semiconductor made of amorphous silicon, which has a slow photovoltaic response speed, a current corresponding to the applied voltage is completely generated within this irradiation time, making it possible to obtain an accurate IV curve. . Therefore, according to the present invention,
It is possible to provide a method that can efficiently measure the voltage-current characteristics of a photovoltaic semiconductor, which has a slow photovoltaic response speed, using a small device.
第１図は電圧電流特性の測定方法の回路図、第
２図は特性曲線の説明図、第３図は光照射装置の
模式図、第４図は入力電力の説明図をそれぞれ示
す。
１……キセノンシヨートアークランプ、２……
集光鏡、３……インテグレーター、４……シヤツ
ター、６……コリメーテイングレンズ、１０……
閃光放電灯、１１……電圧源、１２……電流測定
器、Ｓ……太陽電池、PD……光起電力半導体。
FIG. 1 is a circuit diagram of a method for measuring voltage-current characteristics, FIG. 2 is an explanatory diagram of characteristic curves, FIG. 3 is a schematic diagram of a light irradiation device, and FIG. 4 is an explanatory diagram of input power. 1...Xenon short arc lamp, 2...
Condenser mirror, 3... Integrator, 4... Shutter, 6... Collimating lens, 10...
Flash discharge lamp, 11...voltage source, 12...current measuring device, S...solar cell, PD...photovoltaic semiconductor.
Claims (1)
体、例えば太陽電池のような光起電力半導体に、
キセノンシヨートアークランプよりの光を照射す
るとともに、前記半導体の電極間に電圧値が時間
的に変化する電圧を印加し、前記電極間における
電流値変化の測定を行うことによつて光起電力半
導体の電圧電流特性を測定する方法であつて、 前記光は、小定電流による待機点灯に重畳され
た、時間巾が20ｍsecないし200ｍsecのパルス状
の大電流により点灯される光であり、かつ、照射
にあたつては、待機点灯中はシヤツターに遮ぎら
れ、パルス状の点灯中はシヤツターを開くことを
特徴とする光起電力半導体の電圧電流特性の測定
方法。[Claims] 1. A photovoltaic semiconductor whose voltage-current characteristics are to be measured, for example a photovoltaic semiconductor such as a solar cell,
A photovoltaic semiconductor is produced by irradiating light from a xenon shot arc lamp, applying a voltage whose voltage value changes over time between the electrodes of the semiconductor, and measuring the change in current value between the electrodes. A method for measuring the voltage-current characteristics of a light source, wherein the light is light that is turned on by a large current in the form of a pulse with a duration of 20 msec to 200 msec superimposed on standby lighting by a small constant current, and A method for measuring the voltage-current characteristics of a photovoltaic semiconductor is characterized in that during standby lighting, the shutter is blocked by a shutter, and during pulsed lighting, the shutter is opened.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25652584A JPS61134680A (en) | 1984-12-06 | 1984-12-06 | Measuring method of volt-ampere characteristic of photoelectromotive force semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25652584A JPS61134680A (en) | 1984-12-06 | 1984-12-06 | Measuring method of volt-ampere characteristic of photoelectromotive force semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61134680A JPS61134680A (en) | 1986-06-21 |
| JPH0453271B2 true JPH0453271B2 (en) | 1992-08-26 |
Family
ID=17293831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25652584A Granted JPS61134680A (en) | 1984-12-06 | 1984-12-06 | Measuring method of volt-ampere characteristic of photoelectromotive force semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61134680A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06105280B2 (en) * | 1986-04-08 | 1994-12-21 | 株式会社和廣武 | Solar cell characteristics test method |
| JPH0812225B2 (en) * | 1987-02-23 | 1996-02-07 | 鐘淵化学工業株式会社 | Semiconductor photoelectric conversion element reliability tester |
| DE102006034793A1 (en) * | 2005-12-30 | 2007-07-12 | Solartec Ag | Test device for a PV concentrator module; Method for testing a PV concentrator module with the aid of this and also the production method of a PV concentrator module tested with this |
| CN102520330B (en) * | 2011-12-01 | 2014-01-22 | 华中科技大学 | Volt-ampere characteristic testing system of solar cell photovoltaic device |
| JP2013131678A (en) * | 2011-12-22 | 2013-07-04 | Pulstec Industrial Co Ltd | Solar cell panel inspection method |
| CN105445543B (en) * | 2015-12-17 | 2018-09-14 | 厦门法博科技有限公司 | Xenon flash lamp power-sensing circuit and its method for laser welding system |
-
1984
- 1984-12-06 JP JP25652584A patent/JPS61134680A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61134680A (en) | 1986-06-21 |
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