JPH0454995B2 - - Google Patents
Info
- Publication number
- JPH0454995B2 JPH0454995B2 JP57191654A JP19165482A JPH0454995B2 JP H0454995 B2 JPH0454995 B2 JP H0454995B2 JP 57191654 A JP57191654 A JP 57191654A JP 19165482 A JP19165482 A JP 19165482A JP H0454995 B2 JPH0454995 B2 JP H0454995B2
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- light
- conversion device
- conversion element
- electrode body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Light Receiving Elements (AREA)
- Led Device Packages (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は発光素子、受光素子あるいは発光・受
光対で動作させる光電変換装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a photoelectric conversion device operated by a light emitting element, a light receiving element, or a light emitting/light receiving pair.
従来例の構成とその問題点
近年、半導体材料を用いた光電変換装置を情報
伝送の手段に用いる応用分野が拡大してきてい
る。とくにマイクロコンピユータとオプテイカル
フアイバーに関する技術の発展につれオフイスオ
ートメーション、ロボツトなどの情報機器、制御
機器などの分野において光電変換装置を利用した
伝送手段が広く利用されつつある。Configuration of Conventional Examples and Problems Therein In recent years, the field of application in which photoelectric conversion devices using semiconductor materials are used as a means of information transmission has been expanding. In particular, with the development of technology related to microcomputers and optical fibers, transmission means using photoelectric conversion devices are becoming widely used in fields such as office automation, information equipment such as robots, and control equipment.
光電変換装置を情報伝送の手段に用いる場合、
発光素子、受光素子あるいは発光・受光素子を一
対にして光コネクタによりオプテイカルフアイバ
ーと結合させて情報を伝送している。第１図に
受・発光素子の従来例を示す。光電変換素子部１
は第１の電極体２上に設置してあり、光電変換素
子部１の一方の電極部は金属細線３によつて第２
の電極体４に導電接続されている。光電変換部素
子部１の周辺は光を透過する透明樹脂５によつて
かこまれている。前記光電変換素子部１として
は、発光体として、発光ダイオード、受光体とし
てシリコン受光素子が主に利用されている。従
来、光信号の伝送においては上記の構造の発光素
子と受光素子を併置して対向する二対でもつて双
方向の信号のやりとりを行なつている。この場
合、一方の対側の発光素子の信号が近接する他方
の対側の受光素子のノイズ源となり誤動作の原因
となつていた。このため、従来はしやへい効果を
もつシールド板もしくは金属コネクタなどでノイ
ズをシールドしなければならない欠点があつた。 When using a photoelectric conversion device as a means of information transmission,
Information is transmitted by combining a light-emitting element, a light-receiving element, or a light-emitting/light-receiving element as a pair with an optical fiber through an optical connector. FIG. 1 shows a conventional example of a receiving/emitting device. Photoelectric conversion element part 1
is installed on the first electrode body 2, and one electrode part of the photoelectric conversion element part 1 is connected to the second electrode part by a thin metal wire 3.
It is conductively connected to the electrode body 4 of. The periphery of the photoelectric conversion element section 1 is surrounded by a transparent resin 5 that transmits light. As the photoelectric conversion element section 1, a light emitting diode is mainly used as a light emitter, and a silicon light receiving element is mainly used as a photoreceptor. Conventionally, in the transmission of optical signals, two-way signals are exchanged between two opposing pairs of a light-emitting element and a light-receiving element having the above-described structure placed side by side. In this case, a signal from one light-emitting element on the opposite side becomes a noise source in the adjacent light-receiving element on the other side, causing malfunction. For this reason, in the past, there was a drawback that the noise had to be shielded with a shield plate or a metal connector that had a shielding effect.
発明の目的
本発明は前記の問題に対して有効な解決策を与
えるものであり、簡素な構造で量産性、耐ノイズ
性に富んだ光電変換装置を提供することを目的と
する。OBJECTS OF THE INVENTION The present invention provides an effective solution to the above-mentioned problems, and an object of the present invention is to provide a photoelectric conversion device that has a simple structure, is mass-producible, and has excellent noise resistance.
発明の構成
本発明は光電変換素子部周辺もしくはその一部
が導電性樹脂などの導電性材料にて取り囲まれて
形成されている構造の光電変換装置である。Structure of the Invention The present invention is a photoelectric conversion device having a structure in which the periphery or part of a photoelectric conversion element portion is surrounded by a conductive material such as a conductive resin.
このように導電性樹脂もしくは導電性物質をも
つて囲んだ光電変換装置を用いることにより、耐
ノイズ性にすぐれた装置を容易に得ることがで
き、安価で量産性に富む光電変換装置を実現する
のが容易である。 By using a photoelectric conversion device surrounded by conductive resin or a conductive substance in this way, a device with excellent noise resistance can be easily obtained, and a photoelectric conversion device that is inexpensive and can be mass-produced can be realized. It is easy to
実施例の説明
第２図ａ，ｂに本発明の光電変換装置の一実施
例を示す。第２図ａは平面を、ｂは側面をそれぞ
れ示す。この装置は光電変換素子部１の周辺が透
明樹脂５でおおわれており、その透明樹脂５の一
部に導導性金属片６が一体に埋め込まれて成型さ
れている。導電性金属片６は光電変換素子部１の
周辺に付設して、周辺ノイズに対してシールドす
ることができる。光電変換素子部１は第１の電極
体２上に設置してあり、光電変換素子部１の一方
の電極部は金属細線３によつて第２の電極体４に
導電接続されている。本実施例において導電性金
属片６の樹脂外部のリードはアースに接続しても
よいし、不要な場合には切断してもさしつかえな
い。DESCRIPTION OF EMBODIMENTS FIGS. 2a and 2b show an embodiment of the photoelectric conversion device of the present invention. Figure 2a shows a plane and b shows a side view. In this device, the periphery of a photoelectric conversion element portion 1 is covered with a transparent resin 5, and a conductive metal piece 6 is integrally embedded in a part of the transparent resin 5 and molded. The conductive metal piece 6 can be attached around the photoelectric conversion element section 1 to shield it from surrounding noise. The photoelectric conversion element section 1 is installed on a first electrode body 2, and one electrode section of the photoelectric conversion element section 1 is conductively connected to the second electrode body 4 by a thin metal wire 3. In this embodiment, the lead of the conductive metal piece 6 outside the resin may be connected to ground, or may be cut off if unnecessary.
第３図ａ，ｂ，ｃに本発明の光電変換装置の他
の実施例を示す。第３図ａは平面を、ｂは側面
を、ｃは第３図ａのＡ−A′断面を示す。この装
置は、光電変換素子部１の周辺が透明樹脂５でお
おわれており、樹脂５の周辺を導電性樹脂７で成
型してある。光電変換素子部１は第１の電極体２
上に設置してあり、光電変換素子部１の一方の電
極部は金属細線３によつて第２の電極体４に導電
接続されている。本実施例において導電性樹脂７
はカーボンを添加してあり、比抵抗が約1Ωcmで
ある。 Other embodiments of the photoelectric conversion device of the present invention are shown in FIGS. 3a, 3b, and 3c. 3a shows a plane, b shows a side view, and c shows a cross section taken along the line A-A' in FIG. 3a. In this device, the periphery of a photoelectric conversion element section 1 is covered with a transparent resin 5, and the periphery of the resin 5 is molded with a conductive resin 7. The photoelectric conversion element section 1 is a first electrode body 2
One electrode section of the photoelectric conversion element section 1 is conductively connected to the second electrode body 4 by a thin metal wire 3. In this example, the conductive resin 7
has added carbon and has a specific resistance of approximately 1Ωcm.
なお、導電性樹脂７を用いないで、透明樹脂５
の表面を導電性樹脂でコーテイングしても、周辺
のノイズに対するシールド効果があることはいう
までもない。導電性樹脂でコーテイングできる材
料としてはニツケル、銀などの金属粉体を含む樹
脂、カーボンなどの粉体を含む樹脂などが使用さ
れる。導電性樹脂をコーテイングする場合、第１
の電極体２と第２の電極体４が導電接続されて短
絡されないような配慮が必要であることはいうま
でもない。本発明によれば製造工程は安易であ
り、製造コスト内に占める工程費が低減できる。 Note that the transparent resin 5 is used without using the conductive resin 7.
Needless to say, even if the surface of the device is coated with conductive resin, it will have a shielding effect against surrounding noise. Examples of materials that can be coated with conductive resin include resins containing metal powders such as nickel and silver, and resins containing powders such as carbon. When coating with conductive resin, the first
It goes without saying that care must be taken to ensure that the electrode body 2 and the second electrode body 4 are conductively connected and not short-circuited. According to the present invention, the manufacturing process is easy, and the process cost that accounts for the manufacturing cost can be reduced.
発明の効果
導電性金属片もしくは導電性樹脂を光電変換部
の周辺もしくはその一部に付加した光電変換装置
は電気的にシールドが容易であり、耐ノイズ性に
すぐれているという特徴がある。とくにパルスコ
ードに変換した光情報の伝送に関わる光電変換装
置ではノイズ防止策が重要であり、この分野での
応用には、耐ノイズ性にすぐれた本発明の光電変
換装置が有効であり、経済的効果も大きい。Effects of the Invention A photoelectric conversion device in which a conductive metal piece or a conductive resin is added to the periphery of a photoelectric conversion unit or a part thereof is characterized in that it is easy to electrically shield and has excellent noise resistance. In particular, noise prevention measures are important for photoelectric conversion devices involved in the transmission of optical information converted into pulse codes, and the photoelectric conversion device of the present invention, which has excellent noise resistance, is effective and economical for application in this field. The effect is also large.
第１図は従来の光電変換装置の一例を示す斜視
図、第２図ａ，ｂはそれぞれ本発明の一実施例で
ある光電変換装置の平面図および側面図、第３図
ａ，ｂ，ｃはそれぞれ本発明の他の実施例である
光電変換装置の平面図、側面図および図ａのＡ−
A′断面図である。
１……光電変換素子部、２……第１の電極体、
３……金属細線、４……第２の電極体、５……透
明樹脂、６……導電性金属片、７……導電性樹
脂。
FIG. 1 is a perspective view showing an example of a conventional photoelectric conversion device, FIG. are a plan view, a side view, and A-A of FIG.
It is an A′ cross-sectional view. 1... Photoelectric conversion element section, 2... First electrode body,
3... Thin metal wire, 4... Second electrode body, 5... Transparent resin, 6... Conductive metal piece, 7... Conductive resin.
Claims (1)
電変換素子部の電極系から絶縁分離されるように
して導電性材料を配設し一体成形したことを特徴
とする光電変換装置。 ２ 光電変換素子部周辺の透明樹脂に導伝性材料
が一体に埋め込まれて成形されていることを特徴
とする特許請求の範囲第１項に記載の光電変換装
置。[Scope of Claims] 1. A photovoltaic device characterized in that a conductive material is disposed and integrally formed so as to surround the periphery of a photoelectric conversion element portion and to be insulated and separated from the electrode system of the photoelectric conversion device portion. conversion device. 2. The photoelectric conversion device according to claim 1, wherein a conductive material is integrally embedded and molded in the transparent resin around the photoelectric conversion element portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57191654A JPS5980979A (en) | 1982-10-29 | 1982-10-29 | Photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57191654A JPS5980979A (en) | 1982-10-29 | 1982-10-29 | Photoelectric converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5980979A JPS5980979A (en) | 1984-05-10 |
| JPH0454995B2 true JPH0454995B2 (en) | 1992-09-01 |
Family
ID=16278244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57191654A Granted JPS5980979A (en) | 1982-10-29 | 1982-10-29 | Photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5980979A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02152285A (en) * | 1988-12-02 | 1990-06-12 | Nec Corp | Internal optical device for optical transmission link |
| JP2576383Y2 (en) * | 1991-01-21 | 1998-07-09 | シャープ株式会社 | Optical semiconductor device |
| JP3191729B2 (en) * | 1997-07-03 | 2001-07-23 | 日本電気株式会社 | Optical semiconductor module and manufacturing method thereof |
| JP2002246613A (en) * | 2001-02-14 | 2002-08-30 | Seiko Instruments Inc | Optical function module and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5916886Y2 (en) * | 1979-01-13 | 1984-05-17 | 日本電気株式会社 | optical receptacle |
-
1982
- 1982-10-29 JP JP57191654A patent/JPS5980979A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5980979A (en) | 1984-05-10 |
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