JPH0458898B2 - - Google Patents

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method and apparatus for testing pressure sensing elements, and particularly for testing the characteristics of each pressure sensing element formed on a semiconductor crystal wafer while the wafer remains in its state. The present invention relates to an improved method and device for verifying a pressure detection element.

[Conventional technology] Background technology Today, fluid measurement is carried out in various fields, from large-scale oil plants and power generation equipment to hydraulic control and combustion control in automobiles, and more familiar applications such as household electrical appliances and medical equipment. It is widely used in various fields ranging from equipment to equipment.

Such fluid measurement is generally performed mainly on the measurement of fluid pressure and flow rate, and in recent years flow sensors and pressure sensors that perform such measurements have become smaller, more reliable, and less expensive. Demand is increasing.

As a pressure sensor that satisfies these requirements,
Various semiconductor pressure detection elements have been used in the past, and these semiconductor pressure detection elements include:
The capacitance type shown in Figure 8B,
The strain gauge type shown in FIG. 8C is well known.

The capacitance type semiconductor pressure sensing element 100 shown in FIG. It is formed by providing an electrode 12 on the back surface.

Further, the strain gauge type semiconductor pressure sensing element 100 shown in FIG. 8C has a diaphragm 10 of an N type.
It is formed by using a Si single crystal plate, and providing a P-type strain resistance gauge in which boron is diffused as an impurity near the boundary between the center and the periphery.

By the way, each semiconductor pressure sensing element 1 like this
00 is generally made by taking advantage of the characteristics of semiconductor processing technology such as high integration, high reliability, and mass production. Specifically, as shown in Figure 8A, A large number of pressure sensing element chips are formed on a silicon wafer 200, and this wafer 20
This is done by cutting 0 into individual chips.

Here, the semiconductor single crystal such as Si, which is the material of the pressure sensing element 100, is chemically stable and has good elasticity against external stress and strength comparable to steel, making it ideal as a strain body. It has mechanical properties. In addition, the semiconductor single crystal has excellent characteristics in that there are few errors due to creep and hysteresis, and there is almost no vibration or change over time.

Prior Art Conventionally, in testing a pressure sensing element formed using this type of semiconductor single crystal, the electrical characteristics of the element are first measured in the wafer state using a wafer prober used as a semiconductor testing device. be exposed. As a result, in a capacitance type pressure sensor, the state of electrode formation can be inspected based on the measured electrical characteristics, and in a strain resistance gauge type pressure sensor, the gauge resistance, offset voltage, rectification property, etc. can be inspected based on the measured electrical characteristics. The properties will be tested.

The pressure sensing elements that have passed the inspection by this wafer prober are then cut from the wafer and taken out as individual pressure sensor chips.
As shown in FIG. D, the pressure sensor is mounted or housed on a pressure sensor verification jig, and a pressure verification test as a pressure sensor is performed.

This pressure verification test varies depending on the accuracy required of the pressure sensing element, from a simple verification method that simply determines whether it will work as a pressure sensor, to verification methods that perform high-precision compensation and calibration. There are methods.

[Problems to be solved by the invention] However, in any case, the conventional pressure verification test is performed individually on each semiconductor pressure sensing element separated from the wafer, and cannot be performed in the wafer state. Therefore, there was a problem in that it was a hindrance to increasing the mass productivity, reliability, and degree of integration of the pressure sensing element.

In other words, conventional pressure verification tests are performed individually on each pressure sensing element separated from the wafer, which requires a large amount of time and power. Even if mass-produced, there was a problem in that the subsequent inspection process would impair mass-productivity and economic efficiency.

Furthermore, today, by making full use of ultra-fine semiconductor processing technology, it is possible to form several thousand ultra-small pressure sensing elements from a single wafer.

However, such ultra-small pressure sensing elements are
Since its size is extremely small, it becomes extremely complicated to handle when performing a pressure verification test, and there is a problem in that the time and effort required for the test are further increased.

In particular, when thousands of micro-semiconductor pressure sensing elements are formed from a single wafer, it is practically impossible to individually test all of them, as it would require an enormous amount of time and effort. , effective countermeasures have been desired.

Additionally, in general, the diameter and thickness of the diaphragm of a pressure sensing element are set appropriately so as to have desired pressure sensitivity characteristics, and in conventional pressure verification tests, the thickness of the diaphragm of the pressure sensing element is determined using a stylus, etc. It was tested using.

However, the diaphragm of the pressure detection element is generally extremely thin, and in particular, in the aforementioned ultra-small semiconductor pressure detection element, the diaphragm has a thickness of about several μm.

Therefore, when such a diaphragm is inspected using a stylus, there is a problem in that microcracks and the like are generated in the diaphragm due to contact between the stylus and the diaphragm, resulting in a decrease in the yield of the product.

Purpose of the Invention The present invention has been made in view of the above-mentioned conventional problems, and its purpose is to provide a semiconductor pressure detection device that can quickly and accurately verify the characteristics of a semiconductor pressure detection element in a wafer state. An object of the present invention is to provide a device testing method and device.

[Means for Solving the Problems] Pressure Detection Element Verification Method FIG. 1 shows a flowchart representing the pressure detection element verification method according to the present invention. A pressure injection nozzle is positioned facing a calibration pressure detection element provided at the same height as the crystal wafer and separated from the calibration pressure detection element, and a calibration pressure is applied to the pressure detection element from above. and a pressure calibration step of calibrating the value to a desired value; and a verification step of applying the calibrated verification pressure to the wafer and verifying the characteristics of the plurality of pressure sensing elements formed on the wafer. , the verification step includes: a stylus contact step of bringing a stylus into contact with the electrode portion of each pressure sensing element formed on the wafer; a pressure application step in which the pressure injection nozzle is located at a position distant from the detection element, and a calibrated verification pressure is applied to the diaphragm portion from above; and a signal output from the pressure detection element is transmitted through the stylus. A pressure characteristic measuring step of sequentially measuring the pressure characteristics of each pressure sensing element formed on the wafer is performed repeatedly for each pressure sensing element formed on the wafer, and the characteristics of each pressure sensing element are verified based on the measured signal of each pressure sensing element. It is characterized by being carried out as it is.

The structure of the method of the present invention will be explained in more detail below.

In the pressure calibration process of the present invention, a verification pressure is applied while controlling the calibration pressure detection element by fine movement within the X and Y planes intersecting the pressure application direction, and at this time, the maximum output from the calibration pressure detection element is It is preferred to calibrate the calibration pressure based on the value.

Further, in the verification step, the verification pressure is applied to the wafer while controlling the wafer to move slightly within a plane intersecting the pressure application direction, so that the maximum value of the signal output from the pressure detection element when the pressure is applied is obtained. It is preferable to set the position as the initial position.

Further, in the pressure characteristic measuring step, a signal corresponding to the verification pressure is obtained by calculating the difference between a signal when pressure is applied and a signal when no pressure is applied, which are output from each pressure detection element, and the characteristics thereof are verified. It is preferable.

Pressure Detection Element Verification Apparatus Furthermore, the pressure detection element verification apparatus according to the present invention includes a stage part for fixing a semiconductor crystal wafer on which a large number of pressure detection elements are formed, and a semiconductor crystal wafer adjacent to the stage part. a pressure detection element for calibration provided at the same height; a pressure injection nozzle provided apart from the wafer or the pressure detection element for calibration and applying pressure from a separate position; a stylus that contacts an electrode portion of a pressure application element to which pressure is applied; a prober drive means for controlling the movement of the stage part and the calibration pressure detection element at least within a plane intersecting the pressure application direction; and the prober drive means. pressure calibration means for controlling the pressure injection nozzle and the calibration pressure detection element to face each other, and pre-calibrating the verification pressure applied from the pressure injection nozzle to a desired value based on the signal output from the pressure detection element; , by controlling the prober driving means to sequentially make the diaphragm part of each pressure sensing element formed on the wafer face the pressure injection nozzle, and bringing the stylus into contact with the electrode part of the pressure sensing element each time. , a detection element switching control means for sequentially repeating switching of the detection element, and each time the switching operation of the detection element is completed, a calibrated verification pressure is applied from a pressure injection nozzle to the pressure detection element, and at this time, the pressure is Pressure characteristic measuring means for verifying the characteristics of each pressure sensing element based on the signal output from the sensing element; and characterized in that the characteristics of each pressure sensing element is verified in the wafer state.

The configuration of the apparatus of the present invention will be explained in more detail below.

In the present invention, the stage section is for fixing the semiconductor crystal wafer in a two-dimensional manner, and it is preferable that the stage section has a large number of suction pores on its surface to suction and fix the wafer in a two-dimensional manner.

Further, as described above, the pressure detection element for calibration is provided adjacent to the stage section at the same height as the semiconductor crystal wafer. It is preferable to use one that was created at the same time, has the same diaphragm shape and plate thickness as each pressure sensing element formed on the wafer, and has undergone predetermined pressure calibration.

Further, the pressure injection nozzle applies pressure to the calibration pressure detection element and the wafer from above, respectively.As such a pressure injection nozzle, there is no need to adjust the relative position and height of the pressure detection element to the wafer. It is preferable to use a device that has a mechanism and injects pressure gas controlled by a pressure control device.

Further, the stylus is used to move forward and backward toward the wafer fixed to the stage section and press into contact with the electrode section of the pressure application element to which pressure is applied, thereby obtaining an electrical connection. The number of stylus needles corresponds to the number of electrode parts of the pressure sensing element, usually 4 to 6.
It is preferable that this is provided and that it is formed so as to be held and fixed at a predetermined position in the space above the stage part using a position and height adjustment mechanism.

Further, the prober driving means moves or slightly moves the stage section and the calibration pressure sensing element at least within an X-Y plane intersecting the pressure application direction using control signals supplied from the pressure calibration means and the detection element switching control means. Moreover, the vertical movement of the stylus is controlled.

Further, the pressure calibration means controls the prober driving means, causes the pressure injection nozzle to face the diaphragm portion of the calibration pressure detection element, and applies a verification pressure to the diaphragm portion. At this time, the pressure level of the verification pressure is calibrated to a desired value based on the signal output from this pressure detection element.

Further, the detection element switching control means controls the prober drive means to sequentially cause the pressure injection nozzle to face the diaphragm portion of each pressure detection element formed on the wafer. Then, each time the stylus is pressed into contact with the electrode portion of the pressure detection element facing the pressure injection nozzle, preparations are made to measure the characteristics.

Further, the pressure characteristic measuring means applies a verification pressure from the pressure injection nozzle to the opposing pressure detecting element at a calibrated pressure level every time the detecting element is switched by the pressure detecting element switching control means. The characteristics of the pressure detection element are verified based on the signal output from the pressure detection element.

According to the present invention, it is preferable to provide a data output device for displaying such test results, and to display the characteristics of each pressure sensing element tested in the wafer state as numerical data or graphic data.

[Function] The method and apparatus of the present invention have the above-mentioned configuration, and the function thereof will be explained next.

First, a semiconductor crystal wafer on which pressure sensing elements to be measured are formed is fixed flatly on a stage section.

In this manner, when preparations for measurement are completed, pressure calibration of the verification pressure to be applied to the wafer is performed.

In this pressure calibration, first, the prober drive means is controlled, the pressure injection nozzle is made to face the calibration pressure detection element, and a verification pressure is applied to the diaphragm portion thereof.
At this time, the pressure level is feedback-controlled based on the signal output from the pressure detection element for calibration, and the verification pressure is calibrated to a desired value.

Here, the application of the verification pressure is performed while controlling the pressure detection element by fine movement within the X-Y plane intersecting the pressure application direction, and the calibration is performed based on the maximum value of the signal output from the pressure detection element at this time. It is preferable to do so.

Once the calibration of the test pressure is completed in this way,
Next, a test operation for each pressure detection element formed on the semiconductor crystal wafer is started.

First, when the pressure calibration step is completed, the stage section is moved, an arbitrary pressure detection sensor formed on the semiconductor crystal wafer is made to face the pressure injection nozzle, and the stylus is inserted into the electrode section of this pressure detection element. Make pressure contact.

At this time, the calibrated verification pressure is applied from the pressure injection nozzle to the diaphragm part of the pressure detection element while controlling the stage part to move slightly within the X-Y plane. Then, it is preferable to search for a position where the signal output from the pressure detection element has a maximum value, and to initially set the position of the semiconductor crystal wafer so that the pressure injection nozzle and the diaphragm part face each other at this position.

When the initial position of the semiconductor crystal wafer is set in this way, the detection element switching control means and pressure characteristic measuring means are activated to perform the aforementioned stylus contact process, pressure application process, and pressure characteristic measurement process on the wafer. This process is repeated sequentially for each pressure detection element formed on the wafer, and the characteristics of all pressure detection elements formed on the wafer are verified.

That is, each time the pressure verification of one pressure detection element is completed, the detection element switching control means controls the prober driving means to switch the diaphragm part of the next pressure detection element formed on the wafer to the pressure injection nozzle. The probes are placed facing each other, and the stylus is pressed into contact with the electrode portion of the pressure detection element each time, thereby switching the detection element.

Each time the detection element is switched in this manner, the pressure characteristic measuring means applies the calibrated verification pressure from the injection nozzle to the pressure detection element, and applies the calibration pressure from the pressure detection element when pressure is applied and when no pressure is applied. Based on the output signal, its characteristics, such as resistance value,
Measures output voltage, etc.

The measurement data obtained in this manner are sequentially stored in a memory provided in the pressure characteristic measuring means and displayed as numerical data or graphic data by a data output device.

As described above, according to the present invention, it is possible to quickly and automatically measure the characteristics of a pressure sensing element in the state of a semiconductor crystal wafer, thereby improving mass productivity, which is an inherent feature of semiconductor manufacturing technology. This makes it possible to provide a low-cost pressure sensing element.

Furthermore, according to the present invention, since the characteristics of the pressure sensing element can be measured in the wafer state, it is possible to measure the characteristics of the ultra-small pressure sensing element, which has been difficult to measure in the past. Measurements can be performed quickly and automatically, and as a result, by using the present invention, it becomes possible to produce ultra-small pressure sensing elements on an industrial production basis, which was previously impossible.

Further, according to the present invention, since it is possible to judge whether the pressure is good or bad based on the signal output from the pressure detection element when pressure is applied, the conventional measurement of the thickness of the diaphragm using a stylus can be omitted. becomes possible. As a result, according to the present invention, it is possible to prevent a decrease in yield due to microcracks in the diaphragm or damage to the diaphragm that occur during plate thickness measurement, and it is possible to provide a highly reliable pressure sensing element.

Particularly, according to the present invention, both pressure calibration and verification are carried out by spraying pressurized air or the like from a pressure injection nozzle provided separately above. Therefore, there is no need for a seal or the like when pressure is applied, and the process can be simplified. Therefore, pressure can be efficiently applied to a large number of pressure detection elements.

[Effects of the Invention] As explained above, according to the present invention, it is possible to test the characteristics of a pressure sensing element in the state of a semiconductor crystal wafer, which is an original feature of semiconductor manufacturing technology. Demonstrates mass production, ultra-compact,
It becomes possible to provide a highly reliable and low-cost semiconductor pressure sensing element.

[Example] Next, a preferred example of the present invention will be described based on the drawings.

Configuration of Embodiment FIG. 3 shows a preferred embodiment of the pressure detection element verification device according to the present invention, and the device of the embodiment can be moved three-dimensionally in the X, Y, and Z axis directions. A stage section 22 and a calibration pressure detection element 24 are provided on a base 20 that can be provided.

The stage section 22 is provided at the center of the base 20, and a large number of pores 26 are provided on its surface for horizontally sucking and fixing the semiconductor crystal wafer 200.

Further, the calibration pressure detection element 24 is provided adjacent to the stage section 22 and positioned so that its upper surface is at the same height as the semiconductor crystal wafer 200.

Here, it is preferable to use a pressure sensing element 24 for calibration that was created approximately at the same time as the semiconductor crystal wafer 200 to be measured, and is similar to each pressure sensing element 100 formed on these wafers 200. In order to have these characteristics, it is necessary to use a diaphragm with the same shape and thickness, and which has undergone predetermined pressure calibration.

Moreover, the stage part 2 formed in this way
A pressure injection nozzle 30 and a stylus 32 are provided above 2.

The mounting position of the pressure injection nozzle 30 is adjusted three-dimensionally in the XYZ axis directions by a position adjustment mechanism (not shown), and the pressure injection nozzle 30 is adsorbed onto the stage section 22 by relatively moving the base 20 within the XY plane. It is formed so that it can face a desired position of the fixed semiconductor crystal wafer or the calibration pressure detection element 24 and apply a verification pressure.

Further, the stylus 32 is formed to be able to move forward and backward in the vertical direction, and is formed to press into contact with the electrode portion of the pressure detection element 100 to which pressure is applied.

Here, the stylus 32 is connected to the electrode portion 1 of the pressure detection element 24 or 100, as shown in FIG.
It is necessary to provide the number corresponding to the number of 6 pieces,
Usually 4 to 6 are provided.

FIG. 5 shows the circuit configuration of the pressure sensing element 100 tested in this example, and the pressure sensing element 100 of the example is formed into a gauge type including a bridge circuit, and is connected to a bridge terminal. 4
It has two electrode parts 16.

Therefore, in this embodiment, the stylus 32 is the fourth
As shown in the figure, there are four probes, which apply DC voltage to the bridge circuit through the two probes 32.
The output voltage of this bridge circuit is taken out through the remaining two probes.

Then, the stylus 32 provided in this way
is formed so that its mounting position can be adjusted in the three-dimensional directions of XYZ by an adjustment mechanism (not shown) so that it can surely press into contact with the electrode portion 16 of each pressure detection element.

A feature of the present invention is that the characteristics of the pressure detection element 100 can be verified in the state of the semiconductor crystal wafer 200.

Therefore, in the method of the present invention, the wafer 200 is first
A pressure calibration step is performed in which the calibration pressure applied to the calibration pressure detection element 24 is applied in advance to the calibration pressure detection element 24, and the value is calibrated to a desired value.

After the pressure calibration process is completed, the calibrated verification pressure is applied to the wafer, and each pressure detection element 1 formed on the wafer is
00 pressure is verified in the wafer state.

Here, the verification process of the present invention includes a stylus contact process, a pressure application process, and a pressure specific measurement process for each pressure detection element 100 formed on the wafer.
I am doing this repeatedly.

That is, first, in the stylus contact step, the stylus 32 is pressed into contact with the electrode portion 16 of each pressure detection element 100 formed on the wafer 200.

Subsequently, in the pressure application step, the diaphragm 1 of the pressure sensing element 100 that has been contacted by the stylus
Apply the calibration pressure to the 0 part.

When this pressure is applied, the pressure detection element 100
The signals output from the stylus are sequentially measured via the stylus 32.

Such a series of steps is sequentially repeated for each pressure sensing element 100 formed on the wafer 200, and each measured pressure sensing element 100 is
Based on the signals, the characteristics of each pressure sensing element 100 are verified in the wafer state.

FIG. 2 shows the electrical circuit of a device for carrying out the method of the invention.

The device of the embodiment includes a prober drive device 40 that controls the movement of the base 20 in the X-Y plane and controls the upward and downward movement of the stylus 32, and a pressure control device that controls the pressure of the pressure injection nozzle 30. A control device 42 is included.

The prober drive device 40
Movement within the Y plane is controlled using a step motor and a precision mechanism, and the position of the pressure detection element 24 or 100 facing the pressure injection nozzle 30 is controlled with high precision.

Further, the pressure control device 42 includes a pressure pipe 4
It is connected to the pressure injection nozzle 30 via 2a, and is formed using a pressurizing device 42b, an electronically controlled pressure reducing valve, and a solenoid valve.

Here, when the base 20 is moved by the prober drive device 40 to make the calibration pressure detection element 24 and the pressure injection nozzle 30 face each other, and pressure is applied from the pressure injection nozzle 30 to the calibration pressure detection element 24, this calibration is performed. The pressure detection element 24 outputs a signal corresponding to the applied pressure. The signal output in this way is sent to the amplifier 44 and the A/D converter 46.
The signal is input to the arithmetic and control unit 48 via.

In addition, the base 20 is driven by the prober drive device 40.
is moved so that the desired pressure detection element 100 of the semiconductor crystal wafer 200 and the pressure injection nozzle face each other, and when pressure is applied from the pressure injection nozzle 30 in this state, the pressure detection element 100 similarly responds to the applied pressure. A signal is output.

The signal output in this way is electrically extracted via the stylus 32, and the amplifier 50,
The signal is input to the arithmetic and control unit 48 via the A/D converter 52.

In the present invention, the arithmetic and control device 48 includes a pressure calibration circuit 54, a detection element switching control circuit 56, and a pressure characteristic measurement circuit 58, and performs the above-described pressure calibration process and verification process.

Here, the pressure calibration circuit 54 controls the prober drive device 40 to control the injection nozzle 3.
2 and the calibration pressure detection element 24, and then control the pressure control device 42 to control the pressure injection nozzle 3.
A verification pressure is applied from 0 to the pressure detection element 24.

Then, the verification pressure is calibrated to a desired value based on the signal output from the pressure detection element 24 at this time.

Further, after the calibration of the verification pressure is completed, the detection element switching control device 58 controls the prober drive device 40 and performs a detection element switching operation to sequentially switch the pressure detection elements 100 on the wafer facing the pressure injection nozzle 30. I do.

That is, the detection element switching circuit 56 controls the prober drive device 40 to sequentially cause the diaphragm portion of each pressure detection element 100 formed on the wafer 200 to face the pressure injection nozzle 30. Then, as shown in FIG.
Each time, the stylus 32 is pressed into contact.

Then, each time the detection element switching operation is performed in this way, the pressure characteristic measurement circuit 58
A verification pressure is applied from the pressure injection nozzle 30 to the diaphragm portions of the pressure sensing elements 100 facing each other, and the characteristics of each pressure sensing element 100 are verified based on the signal output from the pressure sensing element 100.

In this way, according to the present invention, the detection element switching control circuit 56 and the pressure characteristic measurement circuit 58 can sequentially verify the characteristics of each pressure detection element 100 formed on the wafer 200 while the wafer is in the state. The measured characteristic data are sequentially stored in the memory within the pressure characteristic measuring circuit 58, and the values are displayed numerically or graphically on the data output device 59.

FIG. 6 shows a specific configuration of the arithmetic and control device 48, and the arithmetic and control device 48 of the embodiment
microprocessor 60, program memory 6
2. Data memory 64 and interface 66
including.

In this embodiment, the program memory 62 stores program information for executing the pressure calibration process and the verification process, and the microprocessor 60 cooperates with the program memory 62 and data memory 64 to operate the prober drive device 40. and controls the pressure control device 42.

The evaluation data of each pressure detection element calculated by the microprocessor 60 is converted into a code by the interface 66 and displayed on the data output device 59.

Effects of the Embodiment The present embodiment has the above-mentioned configuration, and its effects will be explained next by taking as an example a case where a semiconductor crystal wafer 200 on which a large number of pressure detection elements 100 of 3 kg/cm ² specification are measured is measured.

(a) Preparation for measurement First, place the wafer 200 to be measured on the stage section 2.
By placing the wafer 200 on the stage part 22 and evacuating the stage part 22, the wafer 200 is suctioned and fixed two-dimensionally through the large number of pores 26 provided on the stage part 22.

Subsequently, a number of stylus needles 32 corresponding to the number of electrodes of each pressure detection element 100 are attached to the stage section 2.
2, and then each set stylus 3
The position of the pressure sensing element 2 is adjusted so that it can press into contact with the electrode portion of the pressure sensing element 100.

(b) Pressure Calibration When the preparation for measurement is completed in this manner, the calibration pressure applied to the wafer 200 is next calibrated.

In this pressure calibration process, first, the pressure calibration circuit 54 controls the prober drive device 40, and the pressure injection nozzle 30 and the calibration pressure detection element 2 are controlled.
4 is opposed to the base 20.

In this state, the pressure calibration circuit 54 controls the pressure control device 42 to apply a verification pressure from the pressure injection nozzle 30 to the calibration pressure detection element 24, and at this time, the pressure detection element 24 outputs a signal. Based on this, the pressure level is feedback controlled and the calibration pressure is calibrated to a value of 3 Kg/cm ² .

At this time, the application of the verification pressure is performed while the base 20 is slightly controlled in the X-Y horizontal plane by the prober drive device 40, and the verification pressure supplied from the pressure injection nozzle 30 is applied to the diaphragm portion of the pressure detection element 24. Apply it evenly. Then, the calibration pressure is calibrated so that the maximum value of the signal output from the pressure detection element 24 at this time becomes a value corresponding to a pressure of 3 kg/cm ² .

In this way, when the verification pressure applied from the pressure injection nozzle 30 is calibrated to a value of 3Kg/cm ² ,
Next, a pressure verification operation for each pressure detection element 100 formed on the semiconductor crystal wafer 200 is started.

(c) Initial setting of wafer position First, when the pressure calibration step is completed, the detection element switching control circuit 56 controls the prober drive device 40 to adjust the pressure of any pressure detection sensor 100 formed on the semiconductor crystal wafer 200. Injection nozzle 30
The base 20 is moved so as to face it. and,
Any pressure detection sensor 100 can be connected to the pressure injection nozzle 3.
0, the stylus 32 is pressed into contact with the electrode portion of the pressure sensing element 100 as shown in FIG.

In this state, the pressure characteristic measurement circuit 58 controls the prober drive device 40 and the pressure control device 42,
While finely controlling the base 40 in the X-Y horizontal plane,
A calibrated test pressure of 3 Kg/cm ² is applied from the pressure injection nozzle 30 to the diaphragm portion of the pressure detection element 100 .

At this time, since the base 24 is controlled to move slightly as described above, the verification pressure is evenly applied to the diaphragm portion of the pressure detection element 24 from the pressure injection nozzle 30, and the arithmetic and control device 48 of the embodiment A position where the signal output from the detection element 100 has a maximum value is searched for, and the position of the semiconductor crystal wafer 200 is initially set so that the pressure injection nozzle 30 and the diaphragm section face each other at this position.

(d) Data input Once the position of the semiconductor crystal wafer 200 has been initialized in this way, each pressure sensing element 10
0 pitch interval in the semiconductor crystal wafer 200, the pressure application time of the verification pressure, and the pressure detection element 10
Data such as the resistance measurement timing of 0 is input. Note that these data inputs may be performed before starting such a pressure verification process, or may be performed in advance before starting the above-mentioned pressure calibration process.

(e) Verification operation When the initial position setting of the semiconductor crystal wafer 200 and the input of the data are completed in this way,
Next, the detection element switching control circuit 56 and the pressure characteristic measurement circuit 58 are activated, and the above-mentioned stylus contact process, pressure application process, and pressure characteristic measurement process are sequentially performed on each pressure detection element 100 formed on the wafer 200. This process is repeated to verify the characteristics of all pressure sensing elements 100 formed on the wafer 100.

FIG. 7 shows a timing chart of the verification process of this embodiment.

In the apparatus of the embodiment, the detection element switching control circuit 56 retracts the stylus 32 upward from the wafer 200 every time the pressure verification of one pressure detection element 100 is completed, and at the same time, the detection element switching control circuit 56 retracts the stylus 32 upward from the wafer 200. The base 20 is moved each time by one pitch of the detection element so that the pressure injection nozzle 100 faces the pressure injection nozzle 30. Then, at the same time as the movement of the base 20 is completed, the stylus 32 is lowered and pressed into contact with the electrode portion of a new pressure detection element 100.

When the detection element switching control circuit 56 finishes switching the detection elements in this way, the pressure characteristic measurement circuit 58 measures the offset voltage and resistance value of the pressure detection element when no pressure is applied, and these values are The data is written and stored in a data memory 64 shown in FIG.

Following this, the pressure characteristic measurement circuit 58
is from the pressure injection nozzle 30 to the pressure detection element 100
A verification pressure of 3 kg/cm ² is applied for the set injection time, and the voltage output from the pressure detection element 100 at this time is similarly written and stored in the data memory 64.

Therefore, by determining the difference between the obtained offset voltage when no pressure is applied and the output voltage when pressure is applied, the output voltage characteristic of the pressure sensing element 100 with respect to the verification pressure of 3 kg/cm ² can be determined.

In this manner, according to the present invention, the series of operations described above is sequentially performed on all the pressure sensing elements 100 formed on the wafer 200, and the measured data of each pressure sensing element 100 is stored in the data memory 64. The data is sequentially written and memorized.

Then, the data written and stored in the data memory 64 in this way is printed out or displayed as an image on the data output device 59 together with the address of each pressure detection element 100 so that each pressure detection element 100 can be detected. It becomes possible to quickly and automatically verify the characteristics of the element 100 while it is in a wafer state.

Other Embodiments Also, in the present invention, the pressure characteristic measuring circuit 58 compares the obtained data of each pressure detection element 100 with a standard value inputted in advance to judge whether the data is good or bad, and displays the judgment result. is also possible.

In an apparatus that performs such quality determination, it is preferable to provide a marker mechanism that places some kind of mark on the wafer position where a pressure detection element that has been determined to be rejected exists.

Further, in the above embodiment, the case where a strain gauge type pressure sensing element is verified as shown in FIG. can similarly test its characteristics.

Further, in this embodiment, the arithmetic and control device 48 is configured in terms of software as shown in FIG. 6, but the present invention is not limited to this. It is also possible to calibrate.

[Brief explanation of drawings]

FIG. 1 is a flowchart showing a method for verifying a pressure detection element according to the present invention, FIG. 2 is a block diagram showing a preferred embodiment of the verification device of the present invention, and FIG. 3 is a pressure injection nozzle of this embodiment. 4 is an explanatory diagram showing the positional relationship between the pressure sensing element and the stage part, FIG. 4 is an explanatory diagram showing the contact state between the pressure sensing element and the stylus, FIG. 5 is a circuit diagram of the pressure sensing element used in this example, The figure is a circuit diagram of the arithmetic and control unit used in this embodiment.
8 is a timing chart showing the operation of the device of this embodiment, FIG. 8 is an explanatory diagram showing the general configuration of the pressure sensing element, and FIG. 8A is a wafer in which semiconductor pressure sensing elements are formed in a large number of sections. external view, No. 8
Figure B is a side sectional view of a capacitance type pressure sensor formed separately from the wafer, Figure 8C is a side sectional view of a strain gauge type pressure sensor formed separately from the wafer, and Figure 8D is a conventional pressure sensor. FIG. 2 is an explanatory diagram showing a device testing method. 10... diaphragm, 22... stage section,
24... Calibration pressure detection element, 30... Pressure injection nozzle, 32... Stylus, 40... Prober drive device, 42... Pressure control device, 48... Arithmetic control device, 54... Pressure calibration circuit, 56...Detection element switching control circuit, 58...Pressure characteristic measurement circuit, 100
...Pressure detection element, 200...Semiconductor crystal wafer.

Claims (1)

[Scope of Claims] 1. A pressure ejection nozzle is located at a position facing a calibration pressure detection element provided at the same height as the semiconductor crystal wafer to be measured and separated from the calibration pressure detection element, and the pressure is detected. A pressure calibration step in which a verification pressure is applied to the element from above and the value is calibrated to a desired value; and a pressure calibration step in which the calibrated verification pressure is applied to the wafer and a plurality of pressure detections formed on the wafer. a verification step of verifying the characteristics of the element, and the verification step includes: a stylus contact step of bringing a stylus into contact with an electrode portion of each pressure sensing element formed on the wafer; a pressure application step in which the pressure jet nozzle is located at a position facing and separated from the pressure detection element, and a calibrated verification pressure is applied to the diaphragm portion from above; and an output from the pressure detection element. A pressure characteristic measuring step of sequentially measuring the signals of the pressure sensing elements formed on the wafer through the stylus; A pressure sensing element testing method characterized by testing the characteristics of each pressure sensing element in its wafer state. 2. In the method according to claim 1, in the pressure calibration step, the calibration pressure is applied to the calibration pressure detection element while finely controlling the calibration pressure detection element within a plane intersecting the pressure application direction. A method for testing a pressure sensing element, characterized in that the testing pressure is calibrated based on the maximum value of the signal output from the pressure sensing element. 3. In the method according to any one of claims 1 and 2, in the verification step, the verification pressure is applied to the wafer while controlling the wafer by fine movement within a plane intersecting the pressure application direction, and A method for verifying pressure of a detection element, characterized in that a position where a signal output from the pressure detection element at the time of application is maximum is set as an initial position. 4. In the method according to any one of claims 1, 2, and 3, the pressure characteristic measuring step calculates a difference between a signal when pressure is applied and a signal when no pressure is applied, which are output from each pressure detection element. A method for testing a pressure detection element, characterized in that a signal corresponding to a test pressure is obtained by performing the following steps. 5. A stage section for fixing a semiconductor crystal wafer on which a large number of pressure detection elements are formed; a pressure detection element for calibration provided adjacent to the stage section at the same height as the semiconductor crystal wafer; and the wafer or calibration pressure detection element. a pressure injection nozzle that is provided at a distance from the pressure detection element for application and applies pressure from a remote position; a stylus that moves forward and backward toward the wafer and contacts an electrode portion of the pressure application element to which a verification pressure is applied; Prober driving means for controlling the movement of the stage part and the calibration pressure sensing element at least within a plane intersecting the pressure application direction; and controlling the prober driving means to make the pressure injection nozzle and the calibration pressure sensing element face each other; pressure calibration means for pre-calibrating the verification pressure applied from the pressure injection nozzle to a desired value based on a signal output from the pressure detection element; and each pressure detection element formed on the wafer by controlling the prober driving means. a detection element switching control means for sequentially repeating switching of the detection element by sequentially facing the pressure injection nozzle and bringing the stylus into contact with the electrode part of the pressure detection element each time; Pressure characteristics: Every time the element switching operation is completed, a calibrated verification pressure is applied from the pressure injection nozzle to the pressure detection element, and the characteristics of each pressure detection element are verified based on the signal output from the pressure detection element. What is claimed is: 1. A testing device for pressure sensing elements, comprising: measuring means; and testing the characteristics of each pressure sensing element in a wafer state.