JPH046087B2 - - Google Patents
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- Publication number
- JPH046087B2 JPH046087B2 JP58037626A JP3762683A JPH046087B2 JP H046087 B2 JPH046087 B2 JP H046087B2 JP 58037626 A JP58037626 A JP 58037626A JP 3762683 A JP3762683 A JP 3762683A JP H046087 B2 JPH046087 B2 JP H046087B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- single crystal
- substrate
- lithium tantalate
- absorption
- Prior art date
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2923—Materials being conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
- H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2924—Structures
- H10P14/2925—Surface structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3238—Materials thereof being insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3242—Structure
- H10P14/3244—Layer structure
- H10P14/3248—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3451—Structure
- H10P14/3452—Microstructure
- H10P14/3458—Monocrystalline
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3466—Crystal orientation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
- H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H10P14/3814—Continuous wave laser beam
Landscapes
- Recrystallisation Techniques (AREA)
Description
【発明の詳細な説明】
非晶質絶縁体上にSi単結晶を成長させるいわゆ
るSOI（Silicon on Insulator）成長技術はシリコ
ン素子の高速化あるいは三次元構造化にとつて非
常に有効であり、また表示素子など広範囲な応用
が期待されている。[Detailed Description of the Invention] The so-called SOI (Silicon on Insulator) growth technology, which grows Si single crystals on an amorphous insulator, is very effective for increasing the speed of silicon devices and creating three-dimensional structures. It is expected to have a wide range of applications such as display devices.
現在、SOI単結晶膜の成長には二つの方式が検
討されている。一つは単結晶シリコン基板上の二
酸化シリコン（SiO2）膜の一部を開口し、そこ
を種子部として堆積した多結晶Si膜をレーザ光や
電子ビーム等の手段を用いて単結晶化する方法で
ある。他の一つは種子部を用いずに溶融石英のよ
うな絶縁基板やSi基板上に形成したSiO2膜上に
堆積した多結晶Si膜を上記と同様な手段を用いて
単結晶化する方法である。この場合には、絶縁基
板や絶縁膜に１〜5μmのピツチで浅いレリーフを
施しておくことにより、単結晶化Si膜の配向性を
垂直方向のみならず、面内方向でも制御できるこ
とが知られている。 Currently, two methods are being considered for growing SOI single crystal films. One is to open a part of a silicon dioxide (SiO 2 ) film on a single-crystal silicon substrate, and use that as a seed to turn the deposited polycrystalline Si film into a single crystal using means such as laser light or electron beams. It's a method. The other method is to single-crystallize a polycrystalline Si film deposited on an SiO 2 film formed on an insulating substrate such as fused silica or a Si substrate using the same method as above without using a seed part. It is. In this case, it is known that by applying shallow relief on the insulating substrate or insulating film at a pitch of 1 to 5 μm, the orientation of the single crystal Si film can be controlled not only in the vertical direction but also in the in-plane direction. ing.
前者の種子部を用いてSOI膜を形成する方法は
任意の場所に単結晶領域を形成できるため、魅力
的な方法であるが、プロセスに複雑な要因が増え
ること、また開口部と非開口部の境界に段差が生
じることなど解決すべき問題をかかえている。一
方、後者の種子部を用いない方式は余分なプロセ
スがないこと、また原理的に段差が生じないこ
と、種子部分に制約されないこと等、利点を有し
ているが、単結晶化Si膜の良質化にはまだ問題を
残している。 The former method of forming an SOI film using a seed is an attractive method because it allows single-crystal regions to be formed anywhere, but it adds complicating factors to the process, and the difference between open and non-open areas. There are problems that need to be resolved, such as the presence of a step at the boundary between the two. On the other hand, the latter method that does not use a seed part has advantages such as no extra process, no steps in principle, and no restrictions on the seed part. There are still problems in improving quality.
本発明は後者の種子部を用いない方式に関する
もので、良好なSOI膜を有する半導体装置用基板
を提供するものである。 The present invention relates to the latter method that does not use a seed portion, and provides a substrate for a semiconductor device having a good SOI film.
SOI用の絶縁基板としては、溶融石英やSi基板
上に形成したSiO2膜が用いられている。特に溶
融石英は可視光領域で透明であるため、該基板上
につくられたトランジスタはカラーデイスプレイ
のスイツチング素子として有望である。溶融石英
上に堆積した多結晶Si膜の単結晶化にはArレー
ザやNd：YAGレーザ等の可視光及び近赤外光の
レーザが用いられている。これは操作が容易であ
り、単結晶化に必要な出力も比較的容易に得られ
るからである。しかしながら、この場合の難点の
一つは、基板として用いる溶融石英が該レーザ光
の波長領域でほとんど透明であるため多結晶Si膜
の単結晶化において配向性の制御が難しいことで
ある。特に、Si膜をアイランド化した場合には、
アイランド周辺部からの熱の逃げにより結晶化方
向がアイランドの底部中央から進行しないために
アイランドが１つの単結晶グレインにならなかつ
たりあるいは基板面垂直方向が〈100〉にそろわ
ないという不都合が生ずる。従つて単結晶化の際
Si膜の配向性を制御するには単結晶化領域の周囲
を十分に保温する必要がある。 As an insulating substrate for SOI, a SiO 2 film formed on a fused silica or Si substrate is used. In particular, since fused silica is transparent in the visible light range, transistors fabricated on this substrate are promising as switching elements for color displays. Visible and near-infrared lasers such as Ar lasers and Nd:YAG lasers are used to single-crystallize polycrystalline Si films deposited on fused silica. This is because it is easy to operate and the output necessary for single crystallization can be obtained relatively easily. However, one of the difficulties in this case is that since the fused silica used as the substrate is almost transparent in the wavelength range of the laser beam, it is difficult to control the orientation in single crystallization of the polycrystalline Si film. In particular, when the Si film is made into an island,
Because the crystallization direction does not proceed from the center of the bottom of the island due to the escape of heat from the periphery of the island, problems arise in that the island does not become one single crystal grain or that the direction perpendicular to the substrate surface is not aligned with <100>. Therefore, during single crystallization
In order to control the orientation of the Si film, it is necessary to keep the area around the single crystallized region sufficiently warm.
本発明は、絶縁基板として、単結晶化に用いら
れるレーザビームを吸収するような基板を用いる
ことにより、Si単結晶領域の周辺部も加熱し、単
結晶Siの配向性を制御するという考えに基づくも
ので、そのような絶縁基板として、所望の波長領
域の光吸収率を不純物ドーピングにより著しく増
大させることのできるタンタル酸リチウム単結晶
を用いることを特徴としたものである。 The present invention is based on the idea that by using a substrate that absorbs the laser beam used for single crystallization as an insulating substrate, the peripheral part of the Si single crystal region is also heated and the orientation of the single crystal Si is controlled. It is characterized by using a lithium tantalate single crystal, which can significantly increase the light absorption rate in a desired wavelength region by doping with impurities, as such an insulating substrate.
以下実施例を用いて説明する。まず基板として
溶融石英の代りにタンタル酸リチウム
（LiTaO3）単結晶を用いた。この単結晶は融点
が1650℃であり、シリコンの融点よりも200℃以
上高い。該単結晶の可視及び近赤外領域での固有
な分光特性を測定すると、4000Å以上で急激に吸
収が低下し、吸収端は3800Åであることが分か
る。したがつて主な発振波長が4880Åや5145Åの
Arレーザや1.06μmのNd：YAGレーザを加熱源
として用いる場合には熱エネルギーの基板への吸
収が少なく、好ましくない。 This will be explained below using examples. First, a single crystal of lithium tantalate (LiTaO 3 ) was used instead of fused silica as the substrate. This single crystal has a melting point of 1,650°C, which is more than 200°C higher than the melting point of silicon. When the unique spectral characteristics of the single crystal in the visible and near-infrared regions are measured, it is found that the absorption decreases rapidly above 4000 Å, and the absorption edge is 3800 Å. Therefore, the main oscillation wavelength is 4880 Å or 5145 Å.
When an Ar laser or a 1.06 μm Nd:YAG laser is used as a heating source, the absorption of thermal energy into the substrate is small, which is not preferable.
そこで本発明者らはいくつかの遷移金属不純物
を添加したタンタル酸リチウム単結晶を育成し
た。育成方法としては次の通りである。Li2CO3
及びTa2O5粉末をモル比で１：１にし、さらに
0.02モル％のFe2O3粉末を混合してるつぼに入れ、
引上げ法により結晶を育成した。Feの場合は偏
析係数が0.95であるからほゞ添加量が結晶中にと
りこまれる。このようにして育成した単結晶の分
光特性を調べた。 Therefore, the present inventors grew a lithium tantalate single crystal to which several transition metal impurities were added. The cultivation method is as follows. Li 2 CO 3
and Ta 2 O 5 powder in a molar ratio of 1:1, and
Mix 0.02 mol% Fe 2 O 3 powder and put it in a crucible,
Crystals were grown using the pulling method. In the case of Fe, since the segregation coefficient is 0.95, almost the added amount is incorporated into the crystal. The spectral characteristics of the single crystal grown in this way were investigated.
第１図はFeを添加したタンタル酸リチウム単
結晶に対してａは酸素雰囲気中、1100℃、８時間
熱処理した場合の分光特性であり、ｂは窒素雰囲
気中、1100℃、８時間熱処理したときの分光特性
である。吸収端は長波長側にシフトしていること
が分かる。第１図のａとｂの差を第２図にプロツ
トすると、Feを添加した結晶を還元処理した場
合には、3800〜5000Åで著しい吸収の増大がみら
れ、また9500〜13000Åでも吸収の増大がみられ
る。このようなFeを添加したタンタル酸リチウ
ム単結晶を電子スピン共鳴（ESR）により調べ
ると、還元した場合にはイオン価としてFe2+が
主であることが分つた。 Figure 1 shows the spectral characteristics of a Fe-doped lithium tantalate single crystal when a is heat-treated at 1100°C for 8 hours in an oxygen atmosphere, and b is when it is heat-treated at 1100°C for 8 hours in a nitrogen atmosphere. These are the spectral characteristics of It can be seen that the absorption edge is shifted to the longer wavelength side. When the difference between a and b in Figure 1 is plotted in Figure 2, when the Fe-added crystal is subjected to reduction treatment, a significant increase in absorption is seen between 3800 and 5000 Å, and an increase in absorption between 9500 and 13000 Å is also observed. can be seen. When such Fe-doped lithium tantalate single crystals were examined by electron spin resonance (ESR), it was found that Fe 2+ is the predominant ionic valence when reduced.
また第３図はMnを添加したタンタル酸リチウ
ムの分光特性であり、この場合にはFeとは異つ
て、酸化処理した場合に4500〜7000Åの範囲で吸
収が増大しａ、還元処理した場合には、この領域
で吸収が減少したｂ。この場合についてもESR
で測定すると、酸化処理した場合にはMnがMn2+
となつて吸収が増大し、還元処理した場合には
Mn+となることが分つた。 Figure 3 shows the spectral characteristics of lithium tantalate added with Mn. In this case, unlike Fe, absorption increases in the range of 4500 to 7000 Å when subjected to oxidation treatment, and increases when subjected to reduction treatment. b The absorption decreased in this region. In this case as well, the ESR
When measured with oxidation treatment, Mn becomes Mn 2+
As a result, absorption increases, and when reduction treatment is performed,
It was found that it becomes Mn + .
またＶやCuを添加したタンタル酸リチウムに
ついても検討した。製造方法はFeを添加する場
合と同様であり、添加物としてFe2O3の代わりに
0.02モル％のV2O5粉末又はCuO粉末を添加して
育成した。Ｖでは偏析係数が0.1、Cuは0.6であ
る。 We also investigated lithium tantalate containing V and Cu. The production method is the same as when adding Fe, and instead of Fe 2 O 3 as an additive
It was grown by adding 0.02 mol% of V 2 O 5 powder or CuO powder. The segregation coefficient is 0.1 for V and 0.6 for Cu.
このようにして育成した単結晶に還元処理を施
すことにより、それぞれの不純物に応じて4000〜
6000Åで吸収の増大がみられた。また0.02モル％
のFe＋Mn、Cu＋Mnについても添加して、同様
な効果を見い出した。 By subjecting the single crystal grown in this way to reduction treatment, the
An increase in absorption was observed at 6000 Å. Also 0.02 mol%
Similar effects were found by adding Fe+Mn and Cu+Mn.
このように遷移金属を添加したタンタル酸リチ
ウム単結晶に適当な熱処理を施すことにより、可
視及び近赤外光領域で吸収の増大がみられること
が分つた。 It has been found that by subjecting a lithium tantalate single crystal doped with a transition metal to an appropriate heat treatment, absorption increases in the visible and near-infrared light regions.
次に、第４図に示すように、このような遷移金
属を添加したタンタル酸リチウム単結晶基板１
に、深さ0.7μm、大きさ15μm□の溝をドライエ
ツチングにより形成した後、化学気相堆積
（CVD）法により厚さ0.2μmのSiO2膜２を堆積
し、さらに該SiO2膜２上にCVD法により多結晶
Si膜３を堆積した。次に、メカノケミカルポリシ
ング加工を施し、多結晶Si膜を溝内にのみ形成し
た。そして、該多結晶Si膜３に約2WのArレーザ
を照射し、単結晶化した。このような方法で単結
晶化されたSi膜は、１つのグレインからなり、か
つ、Ｘ線回折から、基板面に垂直方向にほぼ
〈100〉配向を有していることが確認された。タン
タル酸リチウム単結晶上にSiO2膜を介さずに直
接多結晶Si膜を堆積し、レーザ照射した場合に
は、格子不整のためにグレイン成長がさまたげら
れ又、リチウムイオンの混入が見られるなど、好
ましい結果が得られなかつた。タンタル酸リチウ
ム単結晶上に被覆する絶縁膜としてはSiO2以外
に窒化シリコン（Si3N4）膜を用いても差支えな
い。 Next, as shown in FIG. 4, a lithium tantalate single crystal substrate 1 doped with such a transition metal is prepared.
After forming a groove with a depth of 0.7 μm and a size of 15 μm□ by dry etching, a 0.2 μm thick SiO 2 film 2 was deposited by chemical vapor deposition (CVD), and then a SiO 2 film 2 with a thickness of 0.2 μm was deposited on the SiO 2 film 2. polycrystalline by CVD method
A Si film 3 was deposited. Next, a mechanochemical polishing process was performed to form a polycrystalline Si film only within the grooves. Then, the polycrystalline Si film 3 was irradiated with an Ar laser of about 2 W to form a single crystal. It was confirmed from X-ray diffraction that the Si film single-crystalized by this method consists of one grain, and has approximately <100> orientation in the direction perpendicular to the substrate surface. When a polycrystalline Si film is deposited directly on a lithium tantalate single crystal without an SiO 2 film and irradiated with laser, grain growth is hindered due to lattice misalignment, and lithium ions are mixed in. However, favorable results were not obtained. In addition to SiO 2 , a silicon nitride (Si 3 N 4 ) film may be used as the insulating film to cover the lithium tantalate single crystal.
以上詳細に述べたように、本発明による半導体
装置用基板は結晶性の良いSOI膜を提供し、シリ
コン素子の高速化あるいは三次元化、また表示素
子用として広い応用が期待される。 As described above in detail, the substrate for a semiconductor device according to the present invention provides an SOI film with good crystallinity, and is expected to have wide applications in speeding up silicon devices, making them three-dimensional, and in display devices.
第１図はFeを0.02モル％添加したタンタル酸リ
チウムの分光特性を示す図であり、ａは酸化処理
後、ｂは還元処理後である。第２図は第１図のａ
とｂの差を示した図である。第３図はMnを添加
した場合の分光特性を示す図でありａは酸化処理
後、ｂは還元処理後である。第４図は本発明の半
導体装置用基板の概念図であり、１は遷移金属を
添加したタンタル酸リチウム単結晶、２はSiO2
膜、３は多結晶Si膜で、レーザ照射により単結晶
化される。
FIG. 1 is a diagram showing the spectral characteristics of lithium tantalate to which 0.02 mol % of Fe is added, where a shows the result after oxidation treatment and b shows after reduction process. Figure 2 is a of Figure 1.
It is a figure showing the difference between and b. FIG. 3 is a diagram showing the spectral characteristics when Mn is added, where a is after oxidation treatment and b is after reduction treatment. FIG. 4 is a conceptual diagram of the substrate for a semiconductor device of the present invention, in which 1 is a lithium tantalate single crystal doped with a transition metal, 2 is a SiO 2
Film 3 is a polycrystalline Si film, which is made into a single crystal by laser irradiation.
Claims (1)
晶基板上に絶縁膜が形成され、該絶縁膜上に単結
晶Si膜が形成されていることを特徴とする半導体
装置用基板。 ２ 遷移金属として、Fe，Mn，Cu及びＶのうち
の少なくとも一種類を添加する特許請求の範囲第
１項に記載の半導体装置用基板。[Scope of Claims] 1. A substrate for a semiconductor device, characterized in that an insulating film is formed on a lithium tantalate single crystal substrate doped with a transition metal, and a single crystal Si film is formed on the insulating film. 2. The semiconductor device substrate according to claim 1, wherein at least one of Fe, Mn, Cu, and V is added as the transition metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58037626A JPS59163817A (en) | 1983-03-08 | 1983-03-08 | Substrate for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58037626A JPS59163817A (en) | 1983-03-08 | 1983-03-08 | Substrate for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59163817A JPS59163817A (en) | 1984-09-14 |
| JPH046087B2 true JPH046087B2 (en) | 1992-02-04 |
Family
ID=12502841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58037626A Granted JPS59163817A (en) | 1983-03-08 | 1983-03-08 | Substrate for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59163817A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2874486B2 (en) * | 1991-11-29 | 1999-03-24 | ソニー株式会社 | Method for forming trench isolation with polishing step and method for manufacturing semiconductor device |
| DE69232648T2 (en) * | 1991-11-29 | 2003-02-06 | Sony Corp., Tokio/Tokyo | Method for producing trench isolation by means of a polishing step and method for producing a semiconductor device |
| KR100511903B1 (en) * | 1999-06-29 | 2005-09-02 | 주식회사 하이닉스반도체 | Method of manufacturing SOI substrate |
-
1983
- 1983-03-08 JP JP58037626A patent/JPS59163817A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59163817A (en) | 1984-09-14 |
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