JPH0461072B2 - - Google Patents
Info
- Publication number
- JPH0461072B2 JPH0461072B2 JP57158625A JP15862582A JPH0461072B2 JP H0461072 B2 JPH0461072 B2 JP H0461072B2 JP 57158625 A JP57158625 A JP 57158625A JP 15862582 A JP15862582 A JP 15862582A JP H0461072 B2 JPH0461072 B2 JP H0461072B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- ions
- sheet
- discharge
- sheet plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
最近イオンプレーテング、イオンインプランテ
ーシヨンのために低速（＜500eV）で大電流の金
属イオンを大面積の基盤に打込む必要が生じてい
る。一般に、低速のイオン銃は空間電荷制限のた
めに大電流イオン流が得られない。一方プラズマ
中に基盤を置き負のバイアス電圧をかけてプラズ
マ中のイオンを加速すれば低速で大電流、大電流
密度のイオンを基盤に集めることは容易である
が、２つの問題が生ずる。１つは打込み用イオン
のみの安定な放電プラズマを生成するのが困難で
あること。この問題を解決するには放電用には別
のガス（一般には不活性ガス）を使用し、打込み
用イオンは後から混入させる方法がよい。即ち、
その放電陽極に打込み用金属の小片を置き放電の
電子流によつて溶融、蒸気化、イオン化を行う。
従つてこの方法では放電用ガスイオンと打込み用
イオンを分離する手段が必要である。もう１つの
問題は、通常の円柱プラズマでは大面積（平面）
に大電流密度のイオン流を集積できず、また一様
性もないことである。附加的な問題としては、基
盤に同時に分子線を照射するときプラズマ中でイ
オン化損失（電離して軌道が曲げられ基盤に到達
しない）を生ずることである。DETAILED DESCRIPTION OF THE INVENTION Recently, for ion plating and ion implantation, it has become necessary to implant metal ions at a low velocity (<500 eV) and a large current into a large area substrate. In general, a low-speed ion gun cannot obtain a large current ion flow due to space charge limitations. On the other hand, if a substrate is placed in the plasma and a negative bias voltage is applied to accelerate the ions in the plasma, it is easy to collect ions at a low speed with a large current and a large current density onto the substrate, but two problems arise. One is that it is difficult to generate a stable discharge plasma containing only implantation ions. A good way to solve this problem is to use another gas (generally an inert gas) for the discharge and mix the implantation ions later. That is,
A small piece of metal for implantation is placed on the discharge anode and is melted, vaporized, and ionized by the electron flow of the discharge.
Therefore, this method requires means for separating the discharge gas ions and the implantation ions. Another problem is that ordinary cylindrical plasma has a large area (flat surface).
It is not possible to integrate an ion flow with a large current density, and there is no uniformity. An additional problem is that when simultaneously irradiating the substrate with molecular beams, ionization losses occur in the plasma (ionization causes the trajectory to bend and not reach the substrate).
我々は図面のようなシートプラズマを利用して
打込み用イオンを分離すると同時に一様な大電流
密度で大面積の基盤に打込む方法を発明した。即
ち、図面（図面は本発明のシートプラズマを利用
したイオン打込み方法の一例を、シートプラズマ
の厚み方向から見た概略図である。）のごとく、
放電用ガス１を用いた放電陰極２と陽極１２との
間の放電により磁場１３に沿つて発生した、磁場
中でのサイクロトロン半径が放電用ガスイオンよ
り大きな打込み用イオンおよび放電用ガスイオン
を含むプラズマ５を、磁石６による磁場によりシ
ート状に変形して薄く幅が広いシートプラズマ１
０を形成せしめ、かかるシートプラズマ１０に対
向して配置されたイオン打込み用の基盤９に、シ
ートプラズマ１０と比べて負の電圧を与えること
によりシートプラズマ１０中の打込み用イオンを
取り出して加速し、このイオンを基盤９に打込む
ことを特徴とするシートプラズマを利用したイオ
ン打込み方法を発明した。 We have invented a method that uses sheet plasma as shown in the drawing to separate implant ions and simultaneously implant them into a large area substrate with a uniform high current density. That is, as shown in the drawing (the drawing is a schematic diagram of an example of the ion implantation method using sheet plasma of the present invention, viewed from the thickness direction of the sheet plasma),
Includes implantation ions and discharge gas ions whose cyclotron radius in the magnetic field is larger than the discharge gas ions, which are generated along the magnetic field 13 by a discharge between the discharge cathode 2 and the anode 12 using the discharge gas 1. Plasma 5 is deformed into a sheet shape by the magnetic field of magnet 6 to produce thin and wide sheet plasma 1.
0 is formed, and by applying a negative voltage compared to the sheet plasma 10 to the ion implantation substrate 9 placed opposite to the sheet plasma 10, the implantation ions in the sheet plasma 10 are taken out and accelerated. , has invented an ion implantation method using sheet plasma, which is characterized by implanting these ions into the substrate 9.
放電用ガス１としてはヘリウム等質量の小さい
不活性ガスを使用すれば、打込み用の一般に質量
の大きなイオンは適当な磁場によるサイクロトロ
ン半径の差を利用して分離できる。即ち、ヘリウ
ムイオンは適当に強くした磁場で（図面のB0）
サイクロトロン半径を小さくして基盤に到達でき
ないようにして、打込み用の大きな質量のイオン
（サイクロトロン半径が例えばAs+の場合数倍大
きい）のみ到達できるようにする。なおシートプ
ラズマは厚みが薄いので基盤の対向面から分子線
同時照射の場合にそのプラズマ中通過距離が極め
て短い。従つて分子線のイオン化損失は通常の円
柱プラズマに比較して極めて小さく、附加的な問
題も解決している。このシートプラズマは一般的
にはカスプ磁場を円柱プラズマに適用する方法、
スリツト型電極と棒状の陰極間の放電による方法
も考えられるが、効率とプラズマ密度の一様性の
点で問題である。簡単で高性能なシートプラズマ
の生成には、本発明者が既に特許出願済（特願昭
57−60634号、特開昭59−27499号）の高能率シー
トプラズマの生成法、即ち、円柱プラズマの両側
に、一対の永久磁石を、同一磁極が該円柱プラズ
マに面するように配置することにより、該円柱プ
ラズマを圧縮し、シート状にすることによりシー
トプラズマを生成する高能率なシートプラズマの
生成法を利用すれば最も効果的である。 If an inert gas with a small mass such as helium is used as the discharge gas 1, ions with a generally large mass for implantation can be separated by utilizing the difference in cyclotron radius caused by an appropriate magnetic field. In other words, helium ions are exposed to a suitably strong magnetic field (B 0 in the drawing).
The cyclotron radius is made small so that it cannot reach the substrate, so that only high-mass ions for implantation (for example, the cyclotron radius is several times larger for As + ) can reach it. Note that sheet plasma is thin, so when molecular beams are simultaneously irradiated from opposite surfaces of the substrate, the distance through which the molecular beams travel through the plasma is extremely short. Therefore, the ionization loss of the molecular beam is extremely small compared to ordinary cylindrical plasma, and additional problems have been solved. This sheet plasma is generally produced by applying a cusp magnetic field to a cylindrical plasma.
A method using a discharge between a slit-shaped electrode and a rod-shaped cathode is also considered, but there are problems in terms of efficiency and uniformity of plasma density. The inventor has already applied for a patent (patent application) for the generation of simple and high-performance sheet plasma.
57-60634, Japanese Patent Application Laid-open No. 59-27499), that is, a pair of permanent magnets are placed on both sides of a cylindrical plasma so that the same magnetic poles face the cylindrical plasma. Therefore, it is most effective to use a highly efficient sheet plasma generation method that generates sheet plasma by compressing the cylindrical plasma and making it into a sheet.
図面は本発明のシートプラズマを利用したイオ
ン打込み装置の一例を、シートプラズマの厚み方
向から見た概略図である。５は、大直径の空芯磁
場コイル等でつくられる初期磁場１３に沿つた、
放電電源７によつて放電陰極２と陽極１２（ハー
スを兼ねている）との間のアーク放電によつて発
生した通常のアーク放電円柱状プラズマ流であ
る。この円柱状プラズマ流５を挟んで、Ｎ極同志
を対向させて一対の永久磁石６を配置することに
より、シート状に変形してシートプラズマ１０を
発生させる。シートプラズマ１０は図面に示した
ような厚みを有し、図面に垂直な方向に大きな巾
を有している。図面において、３と４は中間電極
であり、１１は打込み用イオンを生成する金属小
片等の原料、１４はシートプラズマの終端をしぼ
つて陽極１２に電力を集中するための集束磁石で
ある。このシートプラズマは幅は任意に変えるこ
とができて、厚みはイオンのサイクロトロン直径
程度なので、通常の円柱プラズマに比較して大面
積に大電流密度の一様なイオンを集積することは
容易である。 The drawing is a schematic diagram of an example of an ion implantation apparatus using sheet plasma according to the present invention, viewed from the thickness direction of sheet plasma. 5 is along the initial magnetic field 13 created by a large-diameter air-core magnetic field coil, etc.
This is a normal arc discharge cylindrical plasma flow generated by arc discharge between the discharge cathode 2 and the anode 12 (also serving as a hearth) by the discharge power source 7. By arranging a pair of permanent magnets 6 with their north poles facing each other across this cylindrical plasma flow 5, the permanent magnets 6 are deformed into a sheet shape and a sheet plasma 10 is generated. The sheet plasma 10 has a thickness as shown in the drawing, and a large width in the direction perpendicular to the drawing. In the drawing, 3 and 4 are intermediate electrodes, 11 is a raw material such as a small metal piece for generating ions for implantation, and 14 is a focusing magnet for concentrating power on the anode 12 by squeezing the end of the sheet plasma. The width of this sheet plasma can be changed arbitrarily, and the thickness is about the diameter of an ion's cyclotron, so it is easier to accumulate ions with a uniform high current density over a large area compared to normal cylindrical plasma. .
図面は、本発明のシートプラズマを利用したイ
オン打込み装置の一例を、シートプラズマの厚み
方向から見た概略構成図である。
１は放電用ガス、２は放電陰極、３と４は中間
電極、５はアーク放電円柱状プラズマ流、６は一
対の永久磁石、７は放電電源、８はシートプラズ
マに対して負の電圧をかける直流電源、９は基
盤、１０はシートプラズマ、１１は打込み用イオ
ン生成用金属小片、１２はアーク放電の陽極、１
３は空芯磁場コイルでつくられる一様磁場、１４
は集束磁石である。
The drawing is a schematic configuration diagram of an example of the ion implantation apparatus using sheet plasma of the present invention, viewed from the thickness direction of the sheet plasma. 1 is a discharge gas, 2 is a discharge cathode, 3 and 4 are intermediate electrodes, 5 is an arc discharge cylindrical plasma flow, 6 is a pair of permanent magnets, 7 is a discharge power source, and 8 is a negative voltage applied to the sheet plasma. 9 is a substrate, 10 is a sheet plasma, 11 is a small metal piece for generating ions for implantation, 12 is an anode for arc discharge, 1
3 is a uniform magnetic field created by an air-core magnetic field coil, 14
is a focusing magnet.
Claims (1)
放電により磁場に沿つて発生した、磁場中でのサ
イクロトロン半径が放電用ガスイオンより大きな
打込み用イオンおよび放電用ガスイオンを含むプ
ラズマを、磁場によりシート状に変形して薄く幅
が広いシートプラズマを形成せしめ、このシート
プラズマに対向して配置されたイオン打込み用の
基盤に、シートプラズマと比べて負の電圧を与え
ることによりシートプラズマ中の打込み用イオン
を取り出して加速し、このイオンを基盤に打込む
ことを特徴とするシートプラズマを利用したイオ
ン打込み方法。1 Plasma containing implantation ions and discharge gas ions whose cyclotron radius in the magnetic field is larger than the discharge gas ions, which is generated along the magnetic field by discharge between the discharge cathode and the anode using the discharge gas, The sheet plasma is deformed into a sheet shape by a magnetic field to form a thin and wide sheet plasma, and by applying a negative voltage compared to the sheet plasma to the ion implantation substrate placed opposite to the sheet plasma, the sheet plasma is formed. An ion implantation method using sheet plasma characterized by extracting implantation ions, accelerating them, and implanting these ions into a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57158625A JPS5947381A (en) | 1982-09-10 | 1982-09-10 | Ion implanting device for large current and large area by magnetized sheet plasma |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57158625A JPS5947381A (en) | 1982-09-10 | 1982-09-10 | Ion implanting device for large current and large area by magnetized sheet plasma |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5947381A JPS5947381A (en) | 1984-03-17 |
| JPH0461072B2 true JPH0461072B2 (en) | 1992-09-29 |
Family
ID=15675793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57158625A Granted JPS5947381A (en) | 1982-09-10 | 1982-09-10 | Ion implanting device for large current and large area by magnetized sheet plasma |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5947381A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2545369B2 (en) * | 1986-08-19 | 1996-10-16 | 株式会社 ト−ビ | Sheet plasma ion plating method and apparatus |
| JPH0762244B2 (en) * | 1991-03-19 | 1995-07-05 | 株式会社ライムズ | Film forming method by ion plating |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS493847A (en) * | 1972-05-04 | 1974-01-14 | ||
| JPS55100975A (en) * | 1979-01-23 | 1980-08-01 | Citizen Watch Co Ltd | Hcd type ion plating device |
-
1982
- 1982-09-10 JP JP57158625A patent/JPS5947381A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5947381A (en) | 1984-03-17 |
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