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JPH0461905B2 - - Google Patents
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JPH0461905B2 - - Google Patents

Info

Publication number
JPH0461905B2
JPH0461905B2 JP748784A JP748784A JPH0461905B2 JP H0461905 B2 JPH0461905 B2 JP H0461905B2 JP 748784 A JP748784 A JP 748784A JP 748784 A JP748784 A JP 748784A JP H0461905 B2 JPH0461905 B2 JP H0461905B2
Authority
JP
Japan
Prior art keywords
film
absorption
recording
compounds
naphthoquinone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP748784A
Other languages
Japanese (ja)
Other versions
JPS60152565A (en
Inventor
Sotaro Edokoro
Masaki Ito
Masaru Matsuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP748784A priority Critical patent/JPS60152565A/en
Publication of JPS60152565A publication Critical patent/JPS60152565A/en
Publication of JPH0461905B2 publication Critical patent/JPH0461905B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3275Details of drivers for data electrodes
    • G09G3/3291Details of drivers for data electrodes in which the data driver supplies a variable data voltage for setting the current through, or the voltage across, the light-emitting elements
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/04Structural and physical details of display devices
    • G09G2300/0404Matrix technologies
    • G09G2300/0408Integration of the drivers onto the display substrate
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels
    • G09G2300/0842Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は近赤外光域に吸収を示す色素材料に関
し、さらに詳しくは、電子機器に対して特に有用
な色素材料に関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a dye material that exhibits absorption in the near-infrared light region, and more particularly to a dye material that is particularly useful for electronic devices.

(従来技術とその問題点) 近年、近赤外光域に吸収を有する色素が注目さ
れている。これは、工業的用途として、太陽光利
用のエネルギー変換材料として、又レーザ光線を
用い記録材料として、さらに印刷、写真材料とし
て望ましいが効果が期待できるためである。個々
の応用に対して、材料が具備すべき特性はそれぞ
れに異なるが、基本特性として、近赤外光域での
吸収が大きく、化学的に安定であることが必要で
ある。さらに応用分野によつては、膜状で使用す
るので、与えられた条件で膜形成が容易でなけれ
ばならない。このような材料はこれまでいくつか
開発されている。例えば、スクアリリウム、シア
ニン系色素、金属フタロシアニン、白金ビス(ジ
チオαジケトン)錯化合物等が挙げられる。スク
アリリウムは吸収率が低く又形成された膜の状態
が悪いという問題を有し、シアニン系色素は近赤
外光の吸収率を高めるために分子鎖を長くすると
化学的に不安定となる問題を有し、金属フタロシ
アニンは膜を形成すると非晶質となり、その長期
安定性、即ち結晶化の問題を有し、白金ビス(ジ
チオαジケトン)錯化合物は成膜性が悪く化学的
に不安定であるという問題を有している。このよ
うに従来開発されている近赤外光吸収色素は何ら
かの問題を有し、実用には到つていない。
(Prior art and its problems) In recent years, dyes that absorb in the near-infrared region have attracted attention. This is because it can be expected to be effective in industrial applications, as an energy conversion material using sunlight, as a recording material using laser beams, and as a printing and photographic material. The characteristics that a material should have differ depending on the individual application, but the basic characteristics are that it has high absorption in the near-infrared region and is chemically stable. Furthermore, depending on the field of application, it is used in the form of a film, so it must be easy to form a film under given conditions. Several such materials have been developed so far. Examples include squarylium, cyanine dyes, metal phthalocyanines, platinum bis(dithio α-diketone) complex compounds, and the like. Squarylium has the problem of low absorption rate and poor condition of the formed film, while cyanine dyes have the problem of becoming chemically unstable when the molecular chain is lengthened to increase the absorption rate of near-infrared light. When metal phthalocyanine forms a film, it becomes amorphous and has problems with its long-term stability, that is, crystallization, and platinum bis(dithio-alpha-diketone) complex compounds have poor film-forming properties and are chemically unstable. There is a problem with that. As described above, the conventionally developed near-infrared light absorbing dyes have some problems and have not been put into practical use.

(発明の目的) 本発明は目的は、近赤外光域に大きな吸収を有
し、化学的に安定で、成長し易い色素材料を提供
することである。
(Objective of the Invention) An object of the present invention is to provide a dye material that has large absorption in the near-infrared region, is chemically stable, and is easy to grow.

(発明の構成) すなわち本発明は、 化学構造式〔〕 (式中X、YはSOあるいはSO2を表わす。)で
表わされるナフトキノン系色素材料である。
(Structure of the invention) That is, the present invention has the following chemical structural formula [] (In the formula, X and Y represent SO or SO 2. ) It is a naphthoquinone dye material.

(構成の詳細な説明) 化学構造式〔1〕で表わされるナフトキノン系
色素の具体的化合物として、次の3種がある。
(Detailed explanation of the structure) There are the following three types of specific compounds of the naphthoquinone dye represented by the chemical structural formula [1].

これら化合物の化学名は複雑であるが一例とし
て次のように命名することができる。
Although the chemical names of these compounds are complex, they can be named as follows, for example.

化学構造式〔〕に対して、 15,16−ジスルフイニル−5,10−ジチア−6,
9−ジケト−5(H),6(H),9(H),100(H)−ナフト
〔2,3a〕ベンゾ〔C〕アンスラセンあるいは
5,8−ビスアニリノ−6,2′,7,2″−ジスル
フイニル−1,4−ナフトキノン。
For the chemical structural formula [], 15,16-disulfinyl-5,10-dithia-6,
9-diketo-5(H),6(H),9(H),100(H)-naphtho[2,3a]benzo[C]anthracene or 5,8-bisanilino-6,2',7,2 ″-disulfinyl-1,4-naphthoquinone.

化学構造式〔〕に対して、 15−スルフイニル−16−スルホニル−5,10−ジ
チア−6,9−ジケトン−5(H),6(H),9(H),10
(H)−ナフト〔2,3a〕ベンゾ〔C〕アンスラセ
ンあるいは5,8−ビスアニリノ−6,2′−スル
フイニル−7,2″−スルホニル−1,4−ナフト
キノン。
For the chemical structural formula [], 15-sulfinyl-16-sulfonyl-5,10-dithia-6,9-diketone-5(H),6(H),9(H),10
(H)-Naphtho[2,3a]benzo[C]anthracene or 5,8-bisanilino-6,2'-sulfinyl-7,2''-sulfonyl-1,4-naphthoquinone.

化学構造式〔〕に対して、 15,16−ジスルホニル−5,10−ジチア−6,9
−ジケト−5(H),6(H),9(H),10(H)−ナフト
〔2,3a〕ベンゾ〔C〕アンスラセンあるいは
5,8−ビスアニリノ−6,2′,7,2″−ジスル
ホニル−1,4−ナフトキノン。
For the chemical structural formula [], 15,16-disulfonyl-5,10-dithia-6,9
-diketo-5(H),6(H),9(H),10(H)-naphtho[2,3a]benzo[C]anthracene or 5,8-bisanilino-6,2′,7,2″ -Disulfonyl-1,4-naphthoquinone.

これら〔〕、〔〕、〔〕の化合物の合成の一
例を次に示す。
An example of the synthesis of these compounds [], [], and [] is shown below.

(合成例) 2,3−ジクロロナフタザリン260mg(1ミリ
モル)をエタノール65mlに加熱溶解させる。これ
をA液とする。エタノール20mlにKOH125mg
(2.2ミリモル)を溶解させた0−アミノチオフエ
ノール270mg(2,2ミリモル)を加えてK塩に
変える。これをB液とする。A液をB液に加え、
そのまま室温で数時間(約5時間)かきまぜる。
結晶が析出するがそこに濃塩酸を弱酸性にし過
する。クロロホルム中で再結晶すると80%の収率
で5,8−ビスアニリン−6,2′,7,2″−ジチ
オー1,4−ナフトキノン〔〕が得られる。こ
の同定は、質量分析で行ない、400(1000)、367
(44.7)、336(22.0)(ただしカツコ内は相対強度)
のデータを得、目的物であることを確認した。さ
ら元素分析によつても同定を行ない目的物である
ことを確認した。
(Synthesis Example) 260 mg (1 mmol) of 2,3-dichloronaphthazarine is dissolved in 65 ml of ethanol by heating. This is called liquid A. 125mg of KOH in 20ml of ethanol
Add 270 mg (2.2 mmol) of 0-aminothiophenol in which 2.2 mmol (2.2 mmol) is dissolved to convert it into K salt. This is called liquid B. Add liquid A to liquid B,
Stir for several hours (about 5 hours) at room temperature.
Crystals will precipitate, and then add concentrated hydrochloric acid to make them weakly acidic. Recrystallization in chloroform yields 5,8-bisaniline-6,2',7,2''-dithio-1,4-naphthoquinone with a yield of 80%.Identification was performed by mass spectrometry and 400% (1000), 367
(44.7), 336 (22.0) (However, relative strength is in the cutlet)
We obtained data and confirmed that it was the desired product. It was further identified through elemental analysis and confirmed to be the desired product.

次に、化合物〔〕200mgを氷酢酸50mlにけん
だくし、30%過酸化水素水を230mg(約4倍モル)
を加えて還流下に2時間加熱かくはんする。反応
後、反応液を水に加え、生じた殿を過し、水洗
後乾燥させる。生成物をクロロホルムで抽出し、
クロロホルム−シリカゲルカラムクロマトグラフ
イーによつて分離する。留出順序は、化合物
〔〕、〔〕、〔〕、〔〕の順である。この条件
下では化合物〔〕と〔〕の生成が多いが、同
条件下で反応温度を80℃にして2時間加熱すると
〔〕の生成量が多くなつた。これら化合物の同
定は質量分析と元素分析で行なつた。
Next, 200 mg of the compound [] was suspended in 50 ml of glacial acetic acid, and 230 mg (about 4 times the mole) of 30% hydrogen peroxide was added.
Add and heat and stir under reflux for 2 hours. After the reaction, the reaction solution is added to water, and the resulting precipitate is filtered, washed with water, and then dried. Extract the product with chloroform,
Separate by chloroform-silica gel column chromatography. The order of distillation is compound [], [], [], []. Under these conditions, a large amount of compounds [] and [] were produced, but when the reaction temperature was raised to 80°C and heated for 2 hours under the same conditions, the amount of [] produced increased. Identification of these compounds was performed by mass spectrometry and elemental analysis.

化合物〔〕 (1) 質量分析(相対強度) 432(98)、400(100)、368(48)、336(36) (2) 元素分析 計算値 C:61.10%、N:6.48%、 S:14.80%、H:2.80% 実験値 C:61.02%、N6.51%、 S:14.28%、H:2.71% 化合物〔〕 (1) 質量分析(相対強度) 448(44)、400(100)、384(27)、368(49)、352
(21)、336(20) (2) 元素分析 計算値 C:58.92%、N:6.25%、 S:14,30%、H:2.70% 実験値 C:59,05%、N:6.10%、 S:14.05%、H:2.81% 化合物〔〕 (1) 質量分析(相対強度) 464(1)、448(3)、400(100)、368(51)、336(25) (2) 元素分析 計算値 C:56.89%、N:6.03%、 S:13.81%、H:2.60% 実験値 C:56.71%、N:6.21%、 S:13.98%、H:2.882% 以上の結果より、得られた化合物はそれぞれ目
的物〔〕、〔〕、〔〕であることが確認され
た。
Compound [] (1) Mass spectrometry (relative intensity) 432 (98), 400 (100), 368 (48), 336 (36) (2) Elemental analysis Calculated values C: 61.10%, N: 6.48%, S: 14.80%, H: 2.80% Experimental values C: 61.02%, N6.51%, S: 14.28%, H: 2.71% Compound [] (1) Mass spectrometry (relative intensity) 448 (44), 400 (100), 384 (27), 368 (49), 352
(21), 336(20) (2) Elemental analysis Calculated values C: 58.92%, N: 6.25%, S: 14,30%, H: 2.70% Experimental values C: 59,05%, N: 6.10%, S: 14.05%, H: 2.81% Compound [] (1) Mass spectrometry (relative intensity) 464 (1), 448 (3), 400 (100), 368 (51), 336 (25) (2) Elemental analysis Calculated values C: 56.89%, N: 6.03%, S: 13.81%, H: 2.60% Experimental values C: 56.71%, N: 6.21%, S: 13.98%, H: 2.882% From the above results, obtained The compounds were confirmed to be the target products [], [], and [], respectively.

これら化合物は、波長700〜800nmの近赤外に
大きな吸収を示す。クロロホルムを溶媒として、
これら化合物の可視、近赤外光域における吸収ス
ペクトルを示したのが図である。破線が〔〕
の、一点線が〔〕の、実線が〔)のスペクト
ルを示す。これより、吸収極大波長λmaxは
〔〕において685、740nm、〔〕において685、
740、820nm、〔〕において510、685、744、
820nmであり、700〜800nm波長において大きな
吸収を示すことがわかる。
These compounds exhibit large absorption in near-infrared wavelengths of 700 to 800 nm. Using chloroform as a solvent,
The figure shows the absorption spectra of these compounds in the visible and near-infrared light regions. The broken line is []
The dotted line shows the spectrum of [], and the solid line shows the spectrum of [). From this, the absorption maximum wavelength λmax is 685, 740 nm in [], 685 in [],
740, 820nm, 510, 685, 744 in []
820 nm, and it can be seen that large absorption is exhibited in the wavelength range of 700 to 800 nm.

化学構造式〔〕で表わせるナフトキノン系色
素の工業的有効性を具体的に示すために、以下で
は応用例としてレーザ光線を用いる記録材料を取
り上げて説明する。レーザ光による記録方式とし
ては、永久記録型と可逆記録型に分けられる。色
素を記録材料とする場合は永久記型に属し、支持
体(基板)上に形成された記録材料の薄膜(通常
1μm以下の厚さ)にレーザ光を収束して照射し、
薄膜に孔を形成することにより記録がなされる。
記録された情報の再生(読み出し)は、レーザ光
を連続照射しても記録されない程度に出力を下げ
て照射し、薄膜からの反射光又は透過光を検出し
て行う。反射光検出の場合、一般に孔が形成され
ている部分(ビツト)からの反射率は、周囲の孔
が形成されていない部分からの反射率より低いの
で、この反射率変化を利用して再生を行う。この
ような基本原理に基づく永久記録型の記録材料に
要求される諸特性を次に示す。
In order to specifically demonstrate the industrial effectiveness of the naphthoquinone dye represented by the chemical structural formula [], a recording material using a laser beam will be described as an application example. Recording methods using laser light are divided into permanent recording type and reversible recording type. When a dye is used as a recording material, it belongs to the permanent recording type, and it is a thin film (usually
A laser beam is focused and irradiated onto the surface (thickness of 1μm or less),
Recording is done by forming holes in a thin film.
Reproduction (reading) of recorded information is performed by lowering the output of laser light to such an extent that no recording occurs even if the laser light is continuously irradiated, and by detecting reflected light or transmitted light from the thin film. In the case of reflected light detection, the reflectance from the part where holes are formed (bits) is generally lower than the reflectance from the surrounding parts where holes are not formed, so this change in reflectance is used to perform playback. conduct. The characteristics required of a permanent recording type recording material based on such basic principles are as follows.

第1の特性として、記録材料は記録感度が高く
なければならない。即ち、低いレーザ光強度でか
つ短い照射時間で孔が形成される必要がある。孔
形成の機構は理論的に解明されてはいないが、被
照射部の温度上昇による蒸発、分解、融解等の複
合的効果によると考えられている。高感度である
ためには、まずレーザ光を吸収して温度上昇が起
る必要がある。このため、吸収率の大きな材料が
要求される。使用されるレーザ光源は、装置が小
型となり、大電力を必要としないということから
半導体レーザが使用される。半導体レーザの発振
波長は約800nm前後であるので、この波長域に吸
収を有することである。吸収の大きさを吸光係数
kで示すと、その望ましい値は0.5以上である。
高感度であるためには吸光係数が大きく高い温度
上昇が期待できることに加えて、蒸発、分解、融
解等の温度が低いことが要求される。但し、実用
的には、これらの温度が低過ぎると安定性を欠
き、取扱いが困難となるので、、これらの望まし
い温度範囲は100〜300℃である。
As a first characteristic, the recording material must have high recording sensitivity. That is, holes need to be formed with low laser beam intensity and short irradiation time. Although the mechanism of pore formation has not been theoretically elucidated, it is thought to be due to the combined effects of evaporation, decomposition, and melting due to the temperature rise of the irradiated area. In order to have high sensitivity, it is first necessary to absorb laser light and cause a temperature rise. Therefore, a material with high absorption rate is required. As the laser light source used, a semiconductor laser is used because the device is small and does not require a large amount of power. Since the oscillation wavelength of a semiconductor laser is around 800 nm, it has absorption in this wavelength range. When the magnitude of absorption is expressed by the extinction coefficient k, its desirable value is 0.5 or more.
In order to have high sensitivity, in addition to having a large extinction coefficient and being able to expect a high temperature rise, it is also required that the temperature of evaporation, decomposition, melting, etc. is low. However, in practical terms, if these temperatures are too low, they will lack stability and become difficult to handle, so the desirable temperature range is 100 to 300°C.

光記録媒体は、通常ガラス、合成樹脂、アルミ
ニウム合金等の円板状又はテープ状の基板上に薄
膜形態で形成される。薄膜形成法としては、蒸
着、スパツタリング等の真空付着法、溶剤に溶解
した溶液を基板に塗布する方法等がある。膜形成
方法として望ましいのは、基板に制約を与えない
真空付着法である。有機物の真空付着法としては
抵抗加熱の蒸着が一般的である。蒸着で膜が形成
できるためには、分解温度以下で付着に必要な蒸
気圧(10-3Torr)を有する必要がある。望ま
しい付着速度は10〜1000Å/分である。
Optical recording media are usually formed in the form of a thin film on a disc-shaped or tape-shaped substrate made of glass, synthetic resin, aluminum alloy, or the like. Examples of thin film forming methods include vacuum deposition methods such as evaporation and sputtering, and methods of applying a solution dissolved in a solvent to a substrate. A desirable film forming method is a vacuum deposition method that does not impose restrictions on the substrate. Resistance heating vapor deposition is commonly used as a vacuum deposition method for organic substances. In order for a film to be formed by vapor deposition, it is necessary to have a vapor pressure (10 -3 Torr) required for deposition below the decomposition temperature. Desired deposition rates are 10-1000 Å/min.

蒸着で形成された有機物膜は一般に非晶質であ
る。このような膜を空気中に取り出すと、材料に
よつては空気、特に水分との接触により膜に凝集
が観察される場合がある。このような劣化は記録
媒体としては望ましいものではない。特に永久記
録型の媒体では通常環境で10年以上の寿命が要求
される。このような長期の寿命は加速試験により
測定されるのが一般的である。
Organic films formed by vapor deposition are generally amorphous. When such a film is taken out into the air, depending on the material, agglomeration may be observed in the film due to contact with air, particularly moisture. Such deterioration is not desirable as a recording medium. In particular, permanent recording media are required to have a lifespan of 10 years or more under normal conditions. Such long-term lifespans are generally measured by accelerated tests.

以上、永久記録型媒体に要求される基本特性に
ついて説明したが、これをまとめると、レーザ光
波長に吸収があり、蒸発、分解、融解温度が適度
に低く、蒸着で成膜でき、長寿命であることとな
る。本発明の色素材料〔〕がこれらの要求を満
し、永久記録型媒体材料として優れていることを
具体的に示すために、以下に実施例を説明する。
The basic characteristics required for permanent recording media have been explained above, but to summarize, they have absorption at the laser light wavelength, moderately low evaporation, decomposition, and melting temperatures, can be formed by vapor deposition, and have a long life. It happens. In order to specifically demonstrate that the dye material [ ] of the present invention satisfies these requirements and is excellent as a permanent recording medium material, Examples will be described below.

実施例 1 化合物〔〕の色素50mgをモリブデン製の抵抗
加熱ボートに入れ、真空度1×10-5Torr以下で
ボート温度280℃でアクリル基板上に蒸着するこ
とができた。蒸着速度は100Å/分である。膜厚
が200〜1100Åの範囲で6点の膜を作成し、波長
830nmでの各々の膜の反射率、透過率、吸収率を
測定し、これら光学特性の膜厚依存より吸光係数
kを求めると0.7であつた。
Example 1 50 mg of the dye of compound [] was placed in a resistance heating boat made of molybdenum, and it was possible to vapor-deposit it on an acrylic substrate at a boat temperature of 280° C. under a degree of vacuum of 1×10 −5 Torr or less. The deposition rate is 100 Å/min. Six points of film were created with a film thickness in the range of 200 to 1100 Å, and the wavelength
The reflectance, transmittance, and absorption of each film at 830 nm were measured, and the extinction coefficient k was determined to be 0.7 from the film thickness dependence of these optical properties.

膜の安定性を調べるために、50〜90℃の温度範
囲で加速試験を行なつた。膜の劣化は、2000倍の
光学顕微鏡で観察し、凝集粒の有無をもつて判定
した。これより室温(25℃)での寿命を求めた。
この色素膜の寿命は20年以上であることが分つ
た。
To investigate the stability of the membrane, accelerated tests were performed in the temperature range of 50-90°C. Deterioration of the film was observed using an optical microscope with a magnification of 2000 times, and determined by the presence or absence of aggregated particles. From this, the lifespan at room temperature (25°C) was determined.
The lifespan of this pigment film was found to be over 20 years.

実施例 2 実施例1と同様な実験を化合物〔〕について
行ない、蒸着温度270℃、蒸着速度100Å/分、吸
光係数(λ=760nm)0.6、寿命10年以上を得た。
Example 2 The same experiment as in Example 1 was conducted on the compound [], and a vapor deposition temperature of 270° C., a vapor deposition rate of 100 Å/min, an extinction coefficient (λ=760 nm) of 0.6, and a life of more than 10 years were obtained.

実施例 3 実施例1と同様な実験を化合物〔〕について
行ない、蒸着温度280℃、蒸着速度100Å/分、吸
光係数(λ=810nm)0.5、寿命10年以上を得た。
Example 3 The same experiment as in Example 1 was conducted on the compound [], and a vapor deposition temperature of 280° C., a vapor deposition rate of 100 Å/min, an extinction coefficient (λ=810 nm) of 0.5, and a life of more than 10 years were obtained.

(発明の効果) 以上のように本発明のナフトキノン系色素は、
永久記録型光記録材料として従来の色素にくらべ
て大幅に特性が優れ、また工業的に多くの利点を
有するものである。
(Effect of the invention) As described above, the naphthoquinone dye of the present invention is
As a permanent recording type optical recording material, it has significantly superior properties compared to conventional dyes, and has many industrial advantages.

【図面の簡単な説明】[Brief explanation of the drawing]

図は、本発明のナフトキノン系色素の可視、近
赤外光域における吸収スペクトル図である。
The figure is an absorption spectrum diagram of the naphthoquinone dye of the present invention in the visible and near-infrared light regions.

Claims (1)

【特許請求の範囲】 1 化学構造式〔〕 (式中X、YはSOあるいはSO2を表わす。)で
表わされるナフトキノン系色素材料。
[Claims] 1. Chemical structural formula [] (In the formula, X and Y represent SO or SO 2. ) A naphthoquinone dye material.
JP748784A 1984-01-19 1984-01-19 Naphthoquinone dye material Granted JPS60152565A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP748784A JPS60152565A (en) 1984-01-19 1984-01-19 Naphthoquinone dye material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP748784A JPS60152565A (en) 1984-01-19 1984-01-19 Naphthoquinone dye material

Publications (2)

Publication Number Publication Date
JPS60152565A JPS60152565A (en) 1985-08-10
JPH0461905B2 true JPH0461905B2 (en) 1992-10-02

Family

ID=11667122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP748784A Granted JPS60152565A (en) 1984-01-19 1984-01-19 Naphthoquinone dye material

Country Status (1)

Country Link
JP (1) JPS60152565A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63312889A (en) * 1987-06-17 1988-12-21 Agency Of Ind Science & Technol Optical recording material

Also Published As

Publication number Publication date
JPS60152565A (en) 1985-08-10

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