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JPH0462244B2 - - Google Patents
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JPH0462244B2 - - Google Patents

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Publication number
JPH0462244B2
JPH0462244B2 JP7506484A JP7506484A JPH0462244B2 JP H0462244 B2 JPH0462244 B2 JP H0462244B2 JP 7506484 A JP7506484 A JP 7506484A JP 7506484 A JP7506484 A JP 7506484A JP H0462244 B2 JPH0462244 B2 JP H0462244B2
Authority
JP
Japan
Prior art keywords
grinding wheel
cutting
wafer
wheel
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7506484A
Other languages
Japanese (ja)
Other versions
JPS60220711A (en
Inventor
Riichi Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Machinery Co Ltd
Original Assignee
Micron Machinery Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Machinery Co Ltd filed Critical Micron Machinery Co Ltd
Priority to JP7506484A priority Critical patent/JPS60220711A/en
Publication of JPS60220711A publication Critical patent/JPS60220711A/en
Publication of JPH0462244B2 publication Critical patent/JPH0462244B2/ja
Granted legal-status Critical Current

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  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、単結晶シリコンインゴツト等の半導
体インゴツトから半導体ウエハをスライスする装
置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to an apparatus for slicing semiconductor wafers from semiconductor ingots such as single crystal silicon ingots.

〔発明の背景〕[Background of the invention]

単結晶シリコンインゴツトをスライスしてウエ
ハを得る技術は、素材が高価であること、および
製品の厚さが0.25〜0.3mm程度の薄いものである
こと等から、可能な限り薄くスライスする必要が
あり、このため、スライスする切断砥石も可能な
限り薄くしなければならないが、単結晶シリコン
インゴツトの直径は製造技術の向上から大きくな
る一方であり、通常の円板状切断砥石車では直径
が大きくなるとそれに応じて剛性を保つために砥
石車を厚くせざるを得ず、歩留りが低くなる欠点
がある。このため、従来のこの種の装置は、第7
図および第8図に示すような内周刃のダイヤモン
ド砥石車が使用されている。すなわち、第7図お
よび第8図において、1は内周ダイヤモンド砥石
車刃1aを形成させた内周切断砥石車で、これを
緊張させた状態でその外周を砥石車支持環2に固
定し、かつ該砥石車支持環を軸受3により回転自
在に支持し、前記砥石車支持環2を高速回転せし
め乍ら内周のダイヤモンド砥石刃1aにより単結
晶シリンコインゴツト4からウエハをスライスす
べくしている。
The technology for obtaining wafers by slicing single-crystal silicon ingots requires slicing them as thinly as possible because the materials are expensive and the products are thin, about 0.25 to 0.3 mm thick. For this reason, the cutting wheel for slicing must be made as thin as possible, but the diameter of single-crystal silicon ingots continues to increase due to improvements in manufacturing technology, and the diameter of a regular disc-shaped cutting wheel is As the size increases, the grinding wheel must be made thicker to maintain its rigidity, resulting in a lower yield. For this reason, conventional devices of this type
A diamond grinding wheel with an inner peripheral blade as shown in Fig. 8 and Fig. 8 is used. That is, in FIGS. 7 and 8, reference numeral 1 denotes an inner cutting wheel having an inner diamond grinding wheel blade 1a formed thereon, and the outer periphery of the grinding wheel is fixed to the grinding wheel support ring 2 in a tensioned state. The grinding wheel support ring is rotatably supported by a bearing 3, and while the grinding wheel support ring 2 is rotated at high speed, a wafer is sliced from the single crystal silicon ingot 4 by the diamond grinding wheel blade 1a on the inner circumference. There is.

この構成によれば、切断砥石車1の肉厚を薄くす
ることは可能であるが、その反面、内周刃である
ため、切断砥石車の外径、換言すると砥石車支持
環2の直径が大径となつて大型の装置が必要であ
り、特に最近では前述の如く単結晶シリコンイン
ゴツトの直径が大きくなる一方で、外径が約200
mmのものが生産されるようになつてきており、こ
のため装置が益々大型化されてこれに対する対策
が要望されている。
According to this configuration, it is possible to reduce the wall thickness of the cutting wheel 1, but on the other hand, since the cutting wheel has an internal peripheral blade, the outer diameter of the cutting wheel, in other words, the diameter of the grinding wheel support ring 2 can be reduced. As the diameter becomes larger, larger equipment is required, and recently, as mentioned above, the diameter of single crystal silicon ingots has become larger, while the outer diameter has increased to about 200.
mm is now being produced, and as a result, equipment is becoming larger and larger, and countermeasures are required.

〔発明の目的〕[Purpose of the invention]

本発明は前記の如き要望に応えるためになされ
たもので、外周で切断する小型の円板状切断砥石
車であり乍ら、歩留りよくスライスすることがで
きる新規な半導体ウエハのスライス装置を提供す
ることを目的とする。
The present invention has been made in response to the above-mentioned demands, and provides a novel semiconductor wafer slicing device that is a small disk-shaped cutting wheel that cuts at the outer periphery and can slice at a high yield. The purpose is to

〔発明の概要〕[Summary of the invention]

半導体ウエハの厚さは0.5〜0.7mm程度であつ
て、僅かではあるが比較的容易に弾性変形させる
ことができる。本発明はこの点に着眼し、所要と
する肉薄の円板状切断砥石車の外周側を次第に肉
薄とし、切断の進行に伴ない半導体ウエハをイン
ゴツトから離間する方向に弾性変形させて剛性の
高い円板状切断砥石車による歩留りの良いスライ
スを可能ならしめたものである。
The thickness of the semiconductor wafer is approximately 0.5 to 0.7 mm, and it can be elastically deformed relatively easily, albeit slightly. Focusing on this point, the present invention gradually thins the outer circumferential side of the required thin disk-shaped cutting wheel, and as the cutting progresses, the semiconductor wafer is elastically deformed in the direction away from the ingot, thereby achieving high rigidity. This enables high-yield slicing using a disc-shaped cutting wheel.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の実施例を第1図乃至第5図に基
づいて説明する。
Embodiments of the present invention will be described below with reference to FIGS. 1 to 5.

第1図は本発明によるスライス装置の基本構成
を示す略図である。同図において、10は所望と
する剛性を有する肉厚、例えば5〜10mmの肉厚を
有する円板状切断砥石車であつて、その片面は平
面のままとし、他方の面の外周側を半導体ウエハ
の弾性変形にならつた傾斜面10aにすることに
より砥石車の外周を次第に肉薄とし、その終端に
引続いて必要な幅にわたり断面が平行な平板状で
厚さも0.2〜0.4mm程度と薄い薄肉部10bを形成
し、その外周縁にダイヤモンド砥粒を固着して砥
石刃10cを形成させる。なお、前記ダイヤモン
ド砥粒の固着は、砥石車に直接固着してもよい
し、あらかじめ成形されたセグメント状の砥石を
砥石車に接着、蝋付けなどによつて固定してもよ
い。
FIG. 1 is a schematic diagram showing the basic configuration of a slicing device according to the present invention. In the figure, reference numeral 10 is a disc-shaped cutting wheel with a wall thickness of 5 to 10 mm having a desired rigidity, one side of which remains flat, and the outer peripheral side of the other side with a semiconductor. The outer periphery of the grinding wheel is made gradually thinner by forming an inclined surface 10a that follows the elastic deformation of the wafer, and at the end, a flat plate with a parallel cross section over the required width and a thin wall with a thickness of about 0.2 to 0.4 mm is formed. A portion 10b is formed, and diamond abrasive grains are fixed to the outer peripheral edge of the portion 10b to form a grindstone blade 10c. The diamond abrasive grains may be fixed directly to the grinding wheel, or a segment-shaped grindstone formed in advance may be fixed to the grinding wheel by gluing, brazing, or the like.

また、本発明の装置においては、切断の進行に
伴つて半導体ウエハ4aをインゴツト4から離間
する本発明に弾性変形させる手段5を設ける。こ
の弾性変形手段は如何なる構成でもよいが、例え
ば、第2図に示すようにウエハの切断始端側にエ
ヤーチエツク6を吸着させ、そのエアーチヤツク
をねじ、電動機等を用いて切断の進行に伴なつて
設定した長さ分だけ矢印X方向に引張るようにす
る。なお、第1図において、7は砥石車の軸、8
はその軸受部である。
Further, the apparatus of the present invention is provided with means 5 for elastically deforming the semiconductor wafer 4a to separate it from the ingot 4 as cutting progresses. This elastic deformation means may have any configuration, but for example, as shown in FIG. 2, an air chuck 6 is attracted to the cutting start end of the wafer, and the air chuck is set as the cutting progresses using a screw, an electric motor, etc. Pull it in the direction of the arrow X by the length that you have. In addition, in Fig. 1, 7 is the shaft of the grinding wheel, and 8 is the shaft of the grinding wheel.
is its bearing part.

本発明の半導体ウエハスライス装置は、上記の
如き構成よりなるので、以下述べるように肉厚の
円板状切断砥石車であり乍ら歩留りよくスライス
することができる。
Since the semiconductor wafer slicing apparatus of the present invention has the above-described configuration, it can slice with a high yield even though it is a thick disc-shaped cutting grindstone as described below.

すなわち、第2図は切断の初期を示す説明図
で、平板状薄肉部10bによりウエハ4aを切り
出した状態を示し、この状態になつた後、切断の
進行に伴なつてエアーチヤツク6を次第に矢印X
方向に引張つてウエハを弾性変形させる。なお、
第2図において、9は切断完了時の破壊防止用ス
トツパブロツクであつて、単結晶シリコンインゴ
ツト4と接する面の上方側にウエハの弾性変形を
許容する彎曲面9aを形成している。
That is, FIG. 2 is an explanatory diagram showing the initial stage of cutting, and shows a state in which the wafer 4a is cut out by the flat thin part 10b.After reaching this state, as the cutting progresses, the air chuck 6 is gradually moved in the direction of the arrow X.
The wafer is elastically deformed by being pulled in the direction of the wafer. In addition,
In FIG. 2, reference numeral 9 denotes a stopper block for preventing destruction upon completion of cutting, and has a curved surface 9a formed above the surface in contact with the single crystal silicon ingot 4 to allow elastic deformation of the wafer.

第3図は切断中における研削液の供給状態を示
す説明図である。本発明においては、砥石車を用
いてウエハを切断するので、当然に砥石車側面と
ウエハ内面との間に研削液を供給しながら切断す
るのであるが、その際、本出願人が先に特許出願
中(特願昭53−145340号)の特殊ノズルを用いて
砥石車の側面に研削液を供給すると、研削液は砥
石車の側面に付着した状態で第3図の矢印Bに示
す如くつれ廻り、これが砥石車側面とウエハの内
面との間に到達供給され、ウエハと砥石車傾斜面
10aとの接点Aを中心として研削液による動圧
が発生してウエハを砥石車側面から浮き上らせた
状態とすることができる。従つて、ウエハは砥石
車に金属接触することなく切断加工することがで
きる。
FIG. 3 is an explanatory diagram showing the state of supply of grinding fluid during cutting. In the present invention, since the wafer is cut using a grinding wheel, it is natural to cut the wafer while supplying a grinding fluid between the side surface of the grinding wheel and the inner surface of the wafer. When the grinding fluid is supplied to the side of the grinding wheel using the special nozzle of the pending patent application (Japanese Patent Application No. 145340/1982), the grinding fluid adheres to the side of the grinding wheel and flows as shown by arrow B in Fig. 3. The grinding fluid reaches and is supplied between the side surface of the grinding wheel and the inner surface of the wafer, and dynamic pressure is generated by the grinding fluid around the contact point A between the wafer and the inclined surface 10a of the grinding wheel, lifting the wafer from the side surface of the grinding wheel. It can be kept in a closed state. Therefore, the wafer can be cut without metal contact with the grinding wheel.

第4図は切断終了間際を示す説明図である。同
図に示すように、ウエハ4aをインゴツト4から
離間する方向に弾性変形させ乍ら切断するので、
肉厚の円板状切断砥石車であつても何等支承なく
切断を進行させることができ、かつ、この実施例
の如きストツパブロツクを使用すれば、前記弾性
変形にも拘らず切断完了時にウエハの端部が破壊
されるおそれがない。
FIG. 4 is an explanatory diagram showing the state just before the end of cutting. As shown in the figure, since the wafer 4a is elastically deformed in the direction away from the ingot 4 while being cut,
Even with a thick disk-shaped cutting wheel, cutting can proceed without any support, and if a stopper block like this embodiment is used, the edge of the wafer will be cut when the cutting is completed despite the elastic deformation. There is no risk of parts being destroyed.

本発明に使用する円板状切断砥石車は、前述の
如く、その外周に断面が平行な薄肉部10bが存
在しているため、切断時にその薄肉部が振動する
おそれがある。
As described above, the disc-shaped cutting wheel used in the present invention has a thin wall portion 10b with a parallel cross section on its outer periphery, so there is a risk that the thin wall portion may vibrate during cutting.

第5図および第6図は上記の如き現象を救済す
る手段を備えた例を示すものである。すなわち、
この実施例は、インゴツトを切断する範囲を除く
薄肉部10bの両側に多数の静圧ポケツト11a
を有する砥石車支持板11を配設し、前記静圧ポ
ケツト11aにクーラント液を供給して薄肉部1
0bを支持するようにしたものである。なお、第
5図において、4′はシリコンインゴツトの切断
前位置、4″は切断完了位置を示す。
FIGS. 5 and 6 show an example equipped with means for relieving the above phenomenon. That is,
In this embodiment, a large number of static pressure pockets 11a are provided on both sides of the thin wall portion 10b excluding the area where the ingot is cut.
A grinding wheel support plate 11 having a grinding wheel support plate 11 having a
0b is supported. In FIG. 5, 4' indicates the pre-cutting position of the silicon ingot, and 4'' indicates the cutting completed position.

〔発明の効果〕〔Effect of the invention〕

以上述べたように、本発明によれば、外周に砥
石刃を有する円板状切断砥石車による小型の装置
であり乍ら、薄肉の砥石刃で極めて歩留りのよい
スライスを行なうことができる効果がある。
As described above, according to the present invention, although it is a small device using a disc-shaped cutting wheel having a grinding wheel on the outer periphery, it has the effect of being able to perform slicing with an extremely high yield using a thin grinding wheel. be.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による半導体ウエハのスライス
装置の構成を示す略図、第2図は切断の初期の状
態を示す説明図、第3図は切断中における研削液
の供給状態を示す説明図、第4図は切断終了間際
の状態を示す説明図、第5図は刃先の支持構造を
示す正面図、第6図は第5図のA−A′線断面図、
第7図は従来の内周刃砥石車を示す正面図、第8
図は第7図のB−B′線断面図である。 10……円板状切断砥石車、10a……傾斜
面、10b……薄肉部、10c……砥石刃、5
(6、X)……弾性変形手段。
FIG. 1 is a schematic diagram showing the configuration of a semiconductor wafer slicing apparatus according to the present invention, FIG. 2 is an explanatory diagram showing the initial state of cutting, FIG. 3 is an explanatory diagram showing the supply state of grinding fluid during cutting, and FIG. Fig. 4 is an explanatory diagram showing the state just before the end of cutting, Fig. 5 is a front view showing the support structure of the cutting edge, Fig. 6 is a sectional view taken along the line A-A' in Fig. 5,
Figure 7 is a front view of a conventional internal grinding wheel;
The figure is a sectional view taken along the line B-B' in FIG. 7. DESCRIPTION OF SYMBOLS 10...Disc-shaped cutting grinding wheel, 10a... Inclined surface, 10b... Thin wall part, 10c... Grinding wheel blade, 5
(6,X)...Elastic deformation means.

Claims (1)

【特許請求の範囲】[Claims] 1 所要とする剛性をもつ肉厚の円板状切断砥石
車の一方の面の外周側を半導体ウエハの弾性変形
にならつた傾斜面にすることにより砥石車の外周
を次第に肉薄にして最終的に所望の薄肉寸法を有
する砥石刃を構成し、かつ、切断の進行に伴ない
半導体ウエハを弾性変形させる手段を具備し、そ
の弾性変形により前記肉厚の円板状切断砥石車に
よるスライスを可能ならしめたことを特徴とする
半導体ウエハのスライス装置。
1 The outer periphery of one side of a thick disk-shaped cutting wheel with the required rigidity is made into an inclined surface that follows the elastic deformation of the semiconductor wafer, so that the outer periphery of the grinding wheel is gradually thinned and finally If the grindstone blade has a desired thin wall dimension and is provided with a means for elastically deforming the semiconductor wafer as cutting progresses, the elastic deformation enables slicing by the thick disk-shaped cutting wheel. A semiconductor wafer slicing device characterized by:
JP7506484A 1984-04-16 1984-04-16 Slicer for semiconductor wafer Granted JPS60220711A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7506484A JPS60220711A (en) 1984-04-16 1984-04-16 Slicer for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7506484A JPS60220711A (en) 1984-04-16 1984-04-16 Slicer for semiconductor wafer

Publications (2)

Publication Number Publication Date
JPS60220711A JPS60220711A (en) 1985-11-05
JPH0462244B2 true JPH0462244B2 (en) 1992-10-05

Family

ID=13565397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7506484A Granted JPS60220711A (en) 1984-04-16 1984-04-16 Slicer for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS60220711A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007118581A (en) * 2005-09-28 2007-05-17 Hiroshi Ishizuka Hard-brittle material thin sheet and production method thereof

Also Published As

Publication number Publication date
JPS60220711A (en) 1985-11-05

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