JPH0463975B2 - - Google Patents
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- Publication number
- JPH0463975B2 JPH0463975B2 JP20776588A JP20776588A JPH0463975B2 JP H0463975 B2 JPH0463975 B2 JP H0463975B2 JP 20776588 A JP20776588 A JP 20776588A JP 20776588 A JP20776588 A JP 20776588A JP H0463975 B2 JPH0463975 B2 JP H0463975B2
- Authority
- JP
- Japan
- Prior art keywords
- humidity
- clean room
- clean
- air
- room
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 12
- 239000012498 ultrapure water Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000007921 spray Substances 0.000 description 7
- 230000001276 controlling effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000428 dust Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000004378 air conditioning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Central Air Conditioning (AREA)
- Ventilation (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はクリーンルームの湿度制御方法に係
り、特に半導体の製造等に要求される清浄作業環
境を作り出すためのクリーンルームの湿度制御方
法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for controlling humidity in a clean room, and particularly to a method for controlling humidity in a clean room for creating a clean working environment required for semiconductor manufacturing and the like.
〔従来の技術〕
近年、半導体産業、精密産業等、その生産行程
に於いて塵埃管理を必要とするエリアが急増し、
これに伴いクリーンルームの建設が活発に行われ
ている。[Conventional technology] In recent years, the number of areas that require dust management in the production process, such as the semiconductor industry and precision industry, has rapidly increased.
Along with this, construction of clean rooms is being actively carried out.
第2図は従来のクリーンルームの構造を示す説
明図である。第2図に示すようにクリーンルーム
10は外室12と内室14とが形成され、内室1
4内は清浄室内15となつている。外室12の上
面と内室14の上面との間には天井チヤンバが形
成され、内室14の上面には、送風器と高性能フ
イルタで構成された複数のフアンフイルタユニツ
ト16,16……が配せられる。清浄エアはこれ
らのフアンフイルタユニツト16から清浄室内1
5に吹き出される。吹き出されたエアはダウンフ
ローした後、グレーチング床面(通気面)18を
通つて床下チヤンバに20に吸い込まれる。床下
チヤンバ20はグレーチング床18と外室12の
基礎床との間に形成される。 FIG. 2 is an explanatory diagram showing the structure of a conventional clean room. As shown in FIG. 2, the clean room 10 has an outer room 12 and an inner room 14.
Inside 4 is clean room 15. A ceiling chamber is formed between the upper surface of the outer chamber 12 and the upper surface of the inner chamber 14, and on the upper surface of the inner chamber 14, a plurality of fan filter units 16, 16, . will be arranged. Clean air is supplied from these fan filter units 16 into the clean room 1.
5 is blown out. After the blown air flows down, it passes through the grating floor surface (ventilation surface) 18 and is sucked into the underfloor chamber 20. The underfloor chamber 20 is formed between the grating floor 18 and the foundation floor of the outer room 12.
床下チヤンバ20のエアは吸い込み口22及び
風導管24を介して空調器26に送られる。空調
器26内にはスプレー式加湿装置28、冷却器3
0、加熱器32及びフイルタ34が設けられ、床
下チヤンバ20からのエアはこれらの装置によつ
て調温調湿された後、風導管36及び給気フアン
38を通つてフアンフイルタユニツト16,16
……に送風される。送風エアはフアンフイルタユ
ニツト16によつて清浄エアとされた後、再び清
浄室内15に吹き出され循環されている。 Air in the underfloor chamber 20 is sent to an air conditioner 26 via a suction port 22 and a wind conduit 24. Inside the air conditioner 26 there is a spray type humidifier 28 and a cooler 3.
0, a heater 32 and a filter 34 are provided, and after the air from the underfloor chamber 20 is temperature and humidity controlled by these devices, it passes through a wind pipe 36 and an air supply fan 38 to the fan filter units 16, 16.
Air is blown to... After the blown air is made into clean air by the fan filter unit 16, it is blown out again into the clean room 15 and circulated.
また、空調器26内のスプレー式加湿装置28
には超純水製造装置40からの超純水がポンプ4
2及び調節弁44を介して注入され、超純水は加
湿装置28のノズルからスプレーされる。床下チ
ヤンバ20からのエアは、噴霧された超純水と気
液接触して蒸発作用で加湿される。超純水の調節
弁44は制御装置46によつて制御され、制御装
置46は清浄室内15の湿度センサ48の測定値
に基づいて調節弁44の制御をしている。 In addition, a spray type humidifier 28 in the air conditioner 26
The ultrapure water from the ultrapure water production device 40 is pumped to the pump 4.
2 and the control valve 44, and the ultrapure water is sprayed from the nozzle of the humidifier 28. The air from the underfloor chamber 20 comes into gas-liquid contact with the sprayed ultrapure water and is humidified by evaporation. The ultrapure water regulating valve 44 is controlled by a controller 46, and the controller 46 controls the regulating valve 44 based on the measured value of the humidity sensor 48 in the clean room 15.
このような超純水はクリーンルーム内の空調に
特に必要とされる。通常の市水を使用すると、各
種不純物が含有されるため、加湿によつてエア中
に不純物が混入し、フアンフイルタユニツト16
内の高性能フイルタの目詰まりを速め、清浄室内
15での清浄度の維持にも悪影響を与える。そこ
で、製造コストの高い超純水(市水の5乃至10倍
の1000〜2000円/m3)が使用される。 Such ultrapure water is particularly required for air conditioning in clean rooms. If ordinary city water is used, it will contain various impurities, so impurities will be mixed into the air due to humidification, and the fan filter unit 16
This speeds up the clogging of the high-performance filter inside the clean chamber 15, and has a negative impact on maintaining the cleanliness inside the clean chamber 15. Therefore, ultrapure water (1,000 to 2,000 yen/m 3 , which is 5 to 10 times more expensive than city water) is used, which is expensive to produce.
尚、床下チヤンバ20からのエアは風導管24
から分岐した排気管50より一部排出される。ま
た、外気の一部は外気導入口52及び外気処理用
空調器54を通つて風導管24より空調器26に
送風される。 In addition, the air from the underfloor chamber 20 is supplied to the wind pipe 24.
A portion of the gas is discharged from an exhaust pipe 50 branched from the exhaust pipe 50. Further, a part of the outside air is blown to the air conditioner 26 from the wind pipe 24 through the outside air inlet 52 and the outside air processing air conditioner 54 .
このような構成に於いて、清浄エアは空調器2
6によつて調湿されてると共に、フアンフイルタ
ユニツト16の高性能フイルタによつて清浄化さ
れて清浄室内15に吹き出される。制御装置46
は清浄室内15の湿度センサ48の計測値に基づ
いて超純水用調節弁44を調節し、スプレー式加
湿装置28で噴霧される超純水量を調節してい
る。これにより、吹き出される清浄エアの湿度は
制御装置46によつて調節される。 In such a configuration, clean air is supplied to the air conditioner 2.
6, the air is cleaned by a high-performance filter of a fan filter unit 16, and blown into the clean room 15. Control device 46
The ultrapure water control valve 44 is adjusted based on the measured value of the humidity sensor 48 in the clean room 15, and the amount of ultrapure water sprayed by the spray type humidifier 28 is adjusted. Thereby, the humidity of the clean air blown out is adjusted by the control device 46.
清浄エアは従来から清浄室内15の湿度が40乃
至45%(RH)に維持されるように調湿される。
清浄室内15の湿度が45%以上になると、半導体
のレジスト等の製造プロセスに於いて品質に支障
が生じる。また、清浄エアの湿度を極端に下げる
と、従来のクリーンルームの内壁面又はプロセス
装置等に強力な帯電を生じ、塵埃はこれらに付着
し、清浄室内15に集積し易くなる。この為清浄
室内15での清浄度が低下し、被加工物の塵埃付
着量が増加する不具合がある。また、このような
静電気は60乃至100ボルトに達するため、清浄室
内15で製造される半導体RAM等の静電破壊を
招く環境を誘発する。このため、清浄室内15の
湿度は40%以上に維持されている。 The clean air is conventionally controlled so that the humidity in the clean room 15 is maintained at 40 to 45% (RH).
If the humidity in the clean room 15 exceeds 45%, quality problems will occur in the manufacturing process of semiconductor resists and the like. Furthermore, if the humidity of clean air is extremely reduced, a strong charge will be generated on the inner wall surface or process equipment of a conventional clean room, and dust will adhere to these and tend to accumulate in the clean room 15. For this reason, there is a problem that the cleanliness in the clean chamber 15 decreases and the amount of dust adhering to the workpiece increases. Further, since such static electricity reaches 60 to 100 volts, it induces an environment that causes electrostatic damage to semiconductor RAMs and the like manufactured in the clean room 15. Therefore, the humidity in the clean room 15 is maintained at 40% or higher.
しなしながら、最近の材料技術の目覚ましい発
展、特に帯電防止技術の発展に伴い、クリーンル
ーム内で使用される内装材等において、従来のも
のより帯電し難いものが使用されるに至つてい
る。このため、従来のように清浄室内15の湿度
を40%以上に維持する必要がなく、清浄室内15
で使用される内装材に生じる帯電電位に対応した
湿度まで下げても問題にならない。
However, with recent remarkable developments in material technology, particularly in antistatic technology, interior materials used in clean rooms that are more difficult to charge than conventional materials have come to be used. For this reason, there is no need to maintain the humidity in the clean room 15 at 40% or higher as in the past.
There is no problem even if the humidity is lowered to a level that corresponds to the electrostatic potential generated in the interior materials used.
しかし、従来のクリーンルームの湿度制御方法
においては、内装材等の改良により低湿度にして
良いにもかかわらず、清浄エアは湿度センサ48
に基づいて清浄室内15が常に40%以上に維持さ
れるように調湿される。このため、製造コストの
高い超純水が空調器26の加湿装置28において
余分に使用される不具合が生じると共に、加湿装
置28のランニングコストにも無駄が生じる不具
合がある。 However, in conventional clean room humidity control methods, although it is possible to lower the humidity by improving interior materials, etc., clean air is
Based on this, the humidity in the clean room 15 is controlled so that it is always maintained at 40% or higher. Therefore, there is a problem that ultrapure water, which is expensive to manufacture, is used excessively in the humidifier 28 of the air conditioner 26, and the running cost of the humidifier 28 is also wasted.
本発明はこのような事情に鑑みたもので、最近
の帯電防止技術に伴い、半導体製造時に被製造物
に影響を与えることなく、クリーンルーム内を低
コストで調湿するクリーンルームの湿度制御方法
を提案することを目的としている。 The present invention was developed in light of these circumstances, and proposes a clean room humidity control method that adjusts the humidity inside a clean room at low cost without affecting the products to be manufactured during semiconductor manufacturing, in line with recent antistatic technology. It is intended to.
本発明は前記目的を達成するために、クリーン
ルーム内に吹き出しされる清浄エアを純水を使用
して調湿するクリーンルームの湿度制御方法に於
いて、前記クリーンルーム内に設置した物の帯電
電位を計測し、該計測値に基づいて清浄エアを調
湿することを特徴とする。
In order to achieve the above object, the present invention provides a method for controlling humidity in a clean room in which the humidity of clean air blown into the clean room is controlled using pure water, in which the charged potential of objects installed in the clean room is measured. The method is characterized in that the humidity of the clean air is adjusted based on the measured value.
本発明に係るクリーンルームの湿度制御方法に
よれば、クリーンルーム内の構造物或いはプロセ
ス機器等の物の帯電電位が計測され、清浄エアは
その計測値に基づいて調湿される。このため、従
来のように必ずしもクリーンルーム内の湿度を40
%以上に維持する必要がない場合には、前記帯電
電位値に基づいて出来る限り清浄エアの湿度を下
げてそのエアを供給することができる。従つて、
清浄エアの湿度を低下させることにより、使用さ
れる純水は低減され、また、調湿するための運転
コストに無駄がない。
According to the clean room humidity control method according to the present invention, the charged potential of objects such as structures or process equipment in the clean room is measured, and the humidity of the clean air is adjusted based on the measured value. For this reason, it is not necessary to keep the humidity in the clean room at 40% as in the past.
% or higher, the air can be supplied with the humidity of the clean air reduced as much as possible based on the charged potential value. Therefore,
By lowering the humidity of clean air, the amount of pure water used is reduced, and there is no waste in operating costs for controlling the humidity.
以下添付図面に従つて本発明に係るクリーンル
ームの湿度制御方法の好ましい実施例を詳説す
る。
Preferred embodiments of the method for controlling humidity in a clean room according to the present invention will be described in detail below with reference to the accompanying drawings.
第1図は本発明に係るクリーンルームの湿度制
御方法を示した説明図である。第1図に示すクリ
ーンルーム11は第2図で示した従来のクリーン
ルーム10と略同様な構成になつており、第2図
で示したクリーンルーム10と同様な部品又は構
成部材については同一の符号を付してその詳しい
説明は省略する。 FIG. 1 is an explanatory diagram showing a method for controlling humidity in a clean room according to the present invention. The clean room 11 shown in FIG. 1 has approximately the same configuration as the conventional clean room 10 shown in FIG. 2, and parts or components similar to those of the clean room 10 shown in FIG. Therefore, detailed explanation will be omitted.
本発明に係るクリーンルーム11の清浄室内1
5には帯電電位計70が設けられ、帯電電位計7
0で計測された構造物の電位計測値は制御装置7
2に入力される。制御装置72は帯電電位計70
で計測された帯電電位値に基づいて純水調節弁4
4の調節をしている。尚、清浄室内15の内壁等
の構造物は、従来のものと相違し帯電防止塗料等
が塗布されており、帯電電位が50ボルトになる場
合は、その清浄室内15の湿度は40%RH以下の
低湿度のときである。 Clean room 1 of clean room 11 according to the present invention
5 is provided with a charging electrometer 70;
The potential measurement value of the structure measured at 0 is the control device 7
2 is input. The control device 72 is a charging electrometer 70
Pure water control valve 4 based on the charged potential value measured in
4 adjustments are being made. Note that structures such as the inner walls of the clean room 15 are coated with antistatic paint, etc., unlike conventional ones, and when the charged potential is 50 volts, the humidity in the clean room 15 is 40% RH or less. This is when the humidity is low.
前記の如く構成された本発明に係るクリーンル
ームの湿度制御方法によれば、制御装置72は帯
電電位計70の電位計測値に基づいて、純水調節
弁44を調節し加湿装置28での噴霧量を調節し
ている。そして、その調節は、清浄室内15の帯
電電位計70の計測値が50ボルトを超えないよう
に設定される。このため、フアンフイルタユニツ
ト16から吹き出される清浄エアは、清浄室内1
5の構造物が50ボルト以下の帯電電位になる範囲
で調湿され、清浄室内15の湿度は従来と比べて
40%RH以下に押さえられる。従つて、清浄エア
の湿度は従来より低減され、スプレー式加湿装置
28で加湿に要する超純水量が低減すると共に加
湿装置28の運転コストも少なくなる。更に、従
来より低湿度で製品製造を行うので、被製造物は
湿度による悪影響を受けず歩留りがよくなる。 According to the clean room humidity control method according to the present invention configured as described above, the control device 72 adjusts the pure water control valve 44 based on the potential measurement value of the charged electrometer 70, and controls the spray amount in the humidifier 28. is being adjusted. The adjustment is set so that the measured value of the charged electrometer 70 in the clean room 15 does not exceed 50 volts. Therefore, the clean air blown out from the fan filter unit 16 is
The humidity in the clean room 15 is controlled to the extent that the structure in 5 has a charged potential of 50 volts or less, and the humidity in the clean room 15 is higher than before.
Can be kept below 40%RH. Therefore, the humidity of the clean air is lower than before, the amount of ultrapure water required for humidification by the spray humidifier 28 is reduced, and the operating cost of the humidifier 28 is also reduced. Furthermore, since products are manufactured at lower humidity than in the past, the products to be manufactured are not adversely affected by humidity and yields are improved.
前記実施例では清浄室内15の内壁面に帯電電
位計70を1個のみ設けたが、これに限るもので
はなく、複数の帯電電位計を内壁あるいはプロセ
ス装置等に設けて、きめの細かい湿度制御をして
もよい。 In the embodiment described above, only one charged electrometer 70 was provided on the inner wall surface of the clean room 15, but the invention is not limited to this, and a plurality of charged electrometers may be provided on the inner wall or process equipment, etc., for fine-grained humidity control. You may do so.
また前記実施例において、湿度制御するために
帯電電位計70のみに基づいて制御装置72を制
御した。しかし、この帯電電位計70の他に清浄
室内15に湿度センサ48を設けてもよい。湿度
センサ48は清浄室内15の湿度を測定し、その
測定値を制御装置72に出力する。これにより制
御装置72は、帯電電位計70に基づく計測値だ
けでなく、湿度センサ48に基づく測定値によつ
て、半導体の悪影響となる45%以上の湿度に達し
ないように上限を設定し、安全な制御をすること
ができる。 Further, in the embodiment described above, the control device 72 was controlled based only on the charging electrometer 70 in order to control the humidity. However, in addition to this charged electrometer 70, a humidity sensor 48 may be provided in the clean room 15. Humidity sensor 48 measures the humidity in clean room 15 and outputs the measured value to control device 72 . As a result, the control device 72 uses not only the measured value based on the charging electrometer 70 but also the measured value based on the humidity sensor 48 to set an upper limit so as not to reach a humidity of 45% or more, which would have an adverse effect on the semiconductor. Can be safely controlled.
尚、前記実施例において、スプレー式加湿装置
28を使用したが、これに限るものではなく、加
湿制御ができれば、どんな加湿制御方法の装置で
もよい。 Although the spray type humidifier 28 was used in the embodiment, the present invention is not limited to this, and any type of humidification control method may be used as long as the humidification can be controlled.
以上説明したように本発明に係るクリーンルー
ムの制御方法にいれば、クリーンルーム内の物に
生じる帯電電位を計測し、その帯電電位の計測値
に基づいて清浄エアの調湿を行つたので、高価な
純水等を多量に必要とすることなく、低コストで
加湿を行うことができる。また、被製造物はでき
る限り良好な環境で製造される。
As explained above, in the clean room control method according to the present invention, the charged potential generated on objects in the clean room is measured and the humidity of the clean air is adjusted based on the measured value of the charged potential. Humidification can be performed at low cost without requiring a large amount of pure water or the like. Furthermore, the products to be manufactured are manufactured in as good an environment as possible.
第1図は本発明に係るクリーンルームの制御方
法の説明図、第2図は従来のクリーンルームの制
御方法の説明図である。
11……クリーンルーム、12……外室、14
……内室、15……清浄室内、16……フアンフ
イルタユニツト、18……グレーチング床、20
……床下チヤンバ、26……空調器、28……ス
プレー式加湿装置、40……超純水製造装置、4
2……ポンプ、44……純水調節弁、48……湿
度センサ、70……帯電電位計、72……制御装
置。
FIG. 1 is an explanatory diagram of a clean room control method according to the present invention, and FIG. 2 is an explanatory diagram of a conventional clean room control method. 11...Clean room, 12...Outside room, 14
...Inner room, 15...Clean room, 16...Fan filter unit, 18...Grating floor, 20
... Underfloor chamber, 26 ... Air conditioner, 28 ... Spray type humidifier, 40 ... Ultrapure water production device, 4
2... Pump, 44... Pure water control valve, 48... Humidity sensor, 70... Charging electrometer, 72... Control device.
Claims (1)
純水を使用して調湿するクリーンルームの湿度制
御方法に於いて、 前記クリーンルーム内に設置した物の帯電電位
を計測し、該計測値に基づいて清浄エアを調湿す
ることを特徴としたクリーンルームの湿度制御方
法。 2 前記クリーンルーム内に湿度センサを設け、
湿度センサの湿度測定値に基づいてクリーンルー
ム内の湿度の上限を設定し、クリーンルーム内の
湿度が該上限値以下に維持されるように清浄エア
を調湿することを特徴とした請求項第1項記載の
クリーンルームの湿度制御方法。[Claims] 1. A method for controlling humidity in a clean room that uses pure water to control the humidity of clean air blown into the clean room, comprising: measuring the charged potential of objects installed in the clean room; A clean room humidity control method characterized by adjusting the humidity of clean air based on the humidity value. 2. A humidity sensor is provided in the clean room,
Claim 1, characterized in that an upper limit of humidity in the clean room is set based on the humidity measurement value of the humidity sensor, and the humidity of the clean air is controlled so that the humidity in the clean room is maintained below the upper limit value. Clean room humidity control method described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20776588A JPH0257844A (en) | 1988-08-22 | 1988-08-22 | How to control humidity in a clean room |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20776588A JPH0257844A (en) | 1988-08-22 | 1988-08-22 | How to control humidity in a clean room |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0257844A JPH0257844A (en) | 1990-02-27 |
| JPH0463975B2 true JPH0463975B2 (en) | 1992-10-13 |
Family
ID=16545171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20776588A Granted JPH0257844A (en) | 1988-08-22 | 1988-08-22 | How to control humidity in a clean room |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0257844A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0672445B1 (en) | 1992-12-02 | 1998-03-25 | Ebara Corporation | Method and apparatus for preventing contamination of substrate or substrate surface |
| JPH0745603A (en) * | 1993-07-27 | 1995-02-14 | Shin Etsu Handotai Co Ltd | Manufacture of semiconductor device and managing method of its manufacturing process |
| JP3808237B2 (en) * | 1999-05-14 | 2006-08-09 | 高砂熱学工業株式会社 | Humidification method and humidifier for air conditioning |
| JP5597602B2 (en) * | 2011-07-25 | 2014-10-01 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and storage medium storing program for executing the substrate processing method |
-
1988
- 1988-08-22 JP JP20776588A patent/JPH0257844A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0257844A (en) | 1990-02-27 |
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| LAPS | Cancellation because of no payment of annual fees |