JPH0466501B2 - - Google Patents
Info
- Publication number
- JPH0466501B2 JPH0466501B2 JP22545686A JP22545686A JPH0466501B2 JP H0466501 B2 JPH0466501 B2 JP H0466501B2 JP 22545686 A JP22545686 A JP 22545686A JP 22545686 A JP22545686 A JP 22545686A JP H0466501 B2 JPH0466501 B2 JP H0466501B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- pattern
- resist composition
- film
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000203 mixture Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- PGMYKACGEOXYJE-UHFFFAOYSA-N pentyl acetate Chemical compound CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 9
- 239000000976 ink Substances 0.000 description 9
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910002016 Aerosil® 200 Inorganic materials 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- 229910002012 Aerosil® Inorganic materials 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical group [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000010954 inorganic particle Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000004709 Chlorinated polyethylene Substances 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- FJWGYAHXMCUOOM-QHOUIDNNSA-N [(2s,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6s)-4,5-dinitrooxy-2-(nitrooxymethyl)-6-[(2r,3r,4s,5r,6s)-4,5,6-trinitrooxy-2-(nitrooxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-3,5-dinitrooxy-6-(nitrooxymethyl)oxan-4-yl] nitrate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O)O[C@H]1[C@@H]([C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@@H](CO[N+]([O-])=O)O1)O[N+]([O-])=O)CO[N+](=O)[O-])[C@@H]1[C@@H](CO[N+]([O-])=O)O[C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O FJWGYAHXMCUOOM-QHOUIDNNSA-N 0.000 description 1
- OHBRHBQMHLEELN-UHFFFAOYSA-N acetic acid;1-butoxybutane Chemical compound CC(O)=O.CCCCOCCCC OHBRHBQMHLEELN-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009957 hemming Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、スクリーン印刷工程におけるパター
ン形成用レジスト組成物、特に、リフトオフ用と
してのレジスト組成物に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a resist composition for forming a pattern in a screen printing process, particularly to a resist composition for lift-off.
（従来の技術）
透明導電膜を基板上にパターン形成するパター
ン形成方法として、金属酸化物を含むレジストイ
ンクを印刷後、透明導電膜をコーテイングした後
レジストインクを除去するいわゆるリフトオフ法
を用いることは特開昭49−113573号公報や特開昭
52−36495号公報等にすでに開示されており、こ
の方法は、透明導電膜を被膜後、レジストインク
を印刷しエツチングしてパターンを形成する湿式
のエツチングによる方法に比較して公害が少な
く、工程も簡単であり、工業上有用な方法であ
る。(Prior Art) As a pattern forming method for forming a pattern of a transparent conductive film on a substrate, it is not possible to use a so-called lift-off method in which a resist ink containing a metal oxide is printed, a transparent conductive film is coated, and then the resist ink is removed. JP-A-49-113573 and JP-A-Sho.
This method, which has already been disclosed in Japanese Patent No. 52-36495, is less polluting and requires less processing time than the wet etching method, in which a pattern is formed by printing and etching resist ink after coating a transparent conductive film. This method is also simple and industrially useful.
このリフトオフ法に用いられるレジストインク
として必要な特性は、次に述べる通りである。 The characteristics necessary for the resist ink used in this lift-off method are as described below.
(1) 耐久性が良いこと。(1) Good durability.
(2) スクリーン印刷可能であつて、印刷後裾引が
ないこと。(2) Screen printing is possible and there is no hemming after printing.
(3) 耐熱性が良いこと。少なくとも500℃前後の
温度および室温への冷却過程でひび割れやまく
れが発生しないこと。(3) Good heat resistance. No cracking or blistering will occur at a temperature of at least around 500℃ and during cooling to room temperature.
(4) 熱処理後、蒸着ガスの遮蔽効果が良好である
こと。(4) After heat treatment, the shielding effect of vapor deposition gas should be good.
このような必要特性を具備したレジストインク
を開発することを目的として、例えば下記のよう
な従来例が提案されている。 For the purpose of developing a resist ink having such necessary characteristics, the following conventional examples have been proposed, for example.
(1) 炭酸バリウムを主成分としたレジストとし
て、MSN−42Bレジスト（MinEtch社製）が
市販されており、被膜形成時のパターンレジス
トとして使用されている。(1) MSN-42B resist (manufactured by MinEtch) is commercially available as a resist whose main component is barium carbonate, and is used as a pattern resist when forming a film.
(2) また、特開昭56−96894号公報には、炭酸バ
リウムを主成分としたレジストと、炭酸カルシ
ウムと、ブチルカルビノールと、ニトロセルロ
ースとからなる改良品が提案されている。(2) Furthermore, JP-A-56-96894 proposes an improved product consisting of a resist mainly composed of barium carbonate, calcium carbonate, butyl carbinol, and nitrocellulose.
(3) また、特開昭52−36495号公報には、窒化硼
素を主成分として、バインダーとして硝化綿、
溶剤としてブチルカルビノールを用いたレジス
トインクが提案されている。(3) In addition, JP-A-52-36495 discloses that boron nitride is the main component, nitrified cotton is used as a binder,
A resist ink using butyl carbinol as a solvent has been proposed.
(4) さらに、特開昭57−166390号公報には、ガラ
スフリツトと高融点金属酸化物とからなるマス
キングインクをコーテイング材として使用した
例が記載されている。(4) Furthermore, JP-A-57-166390 describes an example in which a masking ink made of glass frit and a high-melting point metal oxide is used as a coating material.
（本発明が解決しようとする問題点）
しかしながら、前述した(1)〜(3)のレジストにあ
つては、前記のレジストの必要特性のうち特に(3)
の耐熱性については後工程の透明導電膜を形成す
る条件によつて大きく支配され、特に高温状態
（例えば550℃近傍）、急速加熱、急速冷却等の工
程でひび割れやまくれが生じ、熱安定性に欠ける
という問題点があつた。(Problems to be Solved by the Present Invention) However, in the case of the above-mentioned resists (1) to (3), among the necessary characteristics of the above-mentioned resist, especially (3)
The heat resistance of the film is largely controlled by the conditions for forming the transparent conductive film in the subsequent process, and cracks and blisters may occur during high temperature conditions (e.g. around 550℃), rapid heating, rapid cooling, etc. There was a problem with the lack of.
これを、前記のMSN−42Bレジストを例にと
つて説明すると、予熱した後高温で完全に焼成す
ると高温時には変化しないが、炉から取り出して
室温に戻すと基板とレジストとの熱膨張率の違い
によりレジストにはまくれやひび割れが生じた。
また、完全に焼成しない状態で炉から取り出した
場合においては、室温への冷却段階ではまくれや
ひび割れは生じないが、蒸着時の加熱の時にレジ
スト内の樹脂成分がガスとして発生し、蒸着膜の
不良を招来するという欠点があつた。 To explain this using the above-mentioned MSN-42B resist as an example, if it is preheated and then completely baked at a high temperature, it will not change at high temperature, but when it is taken out of the furnace and returned to room temperature, there will be a difference in the coefficient of thermal expansion between the substrate and the resist. This caused blisters and cracks in the resist.
Furthermore, if the resist is taken out of the furnace without being completely fired, no blisters or cracks will occur during the cooling stage to room temperature, but the resin components in the resist will be generated as gas during heating during vapor deposition, causing the vapor deposited film to deteriorate. It had the disadvantage of inviting defects.
また、(4)の場合には低融点のガラスフリツトを
使用しているため加熱処理を施すと、下地のガラ
ス基体と反応して強固に密着しインク残留物の剥
離が困難になるというリフトオフ法における大き
な欠点があつた。 In addition, in the case of (4), since a glass frit with a low melting point is used, when heat treatment is applied, it reacts with the underlying glass substrate and adheres tightly, making it difficult to remove ink residue. There was a big drawback.
（問題点を解決するための手段）
本発明は、このような従来の問題点に鑑みてな
されたものであつて、熱安定性に優れ残留レジス
トの剥離が容易なリフトオフ用レジストを提供す
ることを目的としている。(Means for Solving the Problems) The present invention has been made in view of these conventional problems, and it is an object of the present invention to provide a lift-off resist with excellent thermal stability and easy removal of residual resist. It is an object.
このような目的を達成するために、本発明にお
いては、重量比で酸化チタン微粒子（5μmΦ以
下）を30〜40％、溶剤としてのエチレングリコー
ル、モノブチルエーテルアセテートを30〜40％、
残部を塩化ポリエチレン等の樹脂としたレジスト
（例えば、山栄(株)製の商品名SPR−557−Ｗレジ
スト）にチキソトロピーを増加させるための酸化
珪素微粒子（例えば、日本アエロジル(株)製の商品
名エアロジル 200）を添加し、さらに希釈剤と
してブチルカルビノールアセテート（以下B.C.
A）を添加して、レジスト組成物を構成してい
る。 In order to achieve such an objective, in the present invention, titanium oxide fine particles (5 μm Φ or less) are used in a weight ratio of 30 to 40%, ethylene glycol and monobutyl ether acetate are used as a solvent in a proportion of 30 to 40%,
Silicon oxide fine particles (for example, a product manufactured by Nippon Aerosil Co., Ltd.) to increase thixotropy in a resist whose remainder is a resin such as chlorinated polyethylene (for example, SPR-557-W resist manufactured by Sanei Co., Ltd.) Aerosil 200) is added, and butyl carbinol acetate (hereinafter referred to as BC) is added as a diluent.
A) is added to constitute a resist composition.
このようなレジスト組成物による印刷インク
は、熱安定性が優れ、スクリーン印刷に好適であ
り、例えば大気中での長時間の使用にも安定した
印刷が可能である。また、熱分解後の酸化錫膜の
形成後は不要部を水により簡単なブラツシングで
容易に除去することができ、膜面にはブラシキズ
等がつかないので、高品位のパターン基板を得る
ことができる。 Printing inks made from such resist compositions have excellent thermal stability and are suitable for screen printing, allowing stable printing even when used for long periods of time in the atmosphere, for example. In addition, after the tin oxide film is formed after thermal decomposition, unnecessary parts can be easily removed by simple brushing with water, and the film surface will not have brush scratches, making it possible to obtain high-quality patterned substrates. can.
（試験例）
以下、前記効果について試験例をもつてさらに
詳細に説明する。(Test Example) Hereinafter, the above effects will be explained in more detail using a test example.
前記SPR−557−Ｗレジストに対するエアロジ
ル 200とB.C.Aの混合比を検討した。 The mixing ratio of Aerosil 200 and BCA for the SPR-557-W resist was investigated.
ここで、前記レジスト１Kgに対してエアロジル
200の添加量を０，10，50，100gと段階的に変
化させ、それぞれに対してレジスト中の溶剤を
B.C.Aで置換し、その比率を０，５，50，100％
と段階的に変化させた。このように16種類のレジ
スト組成物を試作し、それぞれを10時間以上混合
器で練り込んだものを比較検討したが、エアロジ
ル 200の添加量が0g以外のものはすべて良好な
スクリーン印刷面を呈する結果を得た。また、
B.C.Aの置換比率が０％のものは、粘度がわずか
１時間の使用で約50ポイズ変化してしまい、使用
に耐えないことも判明した。 Here, for 1 kg of the resist, Aerosil
The amount of 200 added was changed stepwise from 0, 10, 50, and 100g, and the solvent in the resist was changed for each.
Replace with BCA and change the ratio to 0, 5, 50, 100%
changed in stages. In this way, 16 types of resist compositions were prototyped, and each was kneaded in a mixer for over 10 hours and compared and studied. All of the resist compositions with an added amount of Aerosil 200 other than 0g exhibited good screen printing surfaces. Got the results. Also,
It was also found that a product with a BCA substitution ratio of 0% had a viscosity change of about 50 poise after just one hour of use, making it unusable.
次に、前記レジスト組成物について焼成に最適
な温度を検討した。 Next, the optimum temperature for firing the resist composition was investigated.
本来、前記レジスト組成物は熱安定性に優れて
いる半面、示差熱分析によると分解点が570℃と
高いため、適正な焼成温度と基体の軟化温度が接
近する点がわずかに難点であるといえるが、520
℃の雰囲気温度で15分間焼成すれば、水によるブ
ラツシングで容易にレジストの組成物を除去する
ことができ、剥離性が良好であることが判明し
た。なお、一般的には酸性溶液を用いて剥離され
るが、本発明のレジスト組成物を用いると、水で
容易に剥離することができ、工業上、有利であ
る。さらに、剥離に用いられた水の廃液を分析し
た結果、TiO2，SiO2，SnO2等の無機物粒子のみ
が検出され、他の有害物質は全く検出されなかつ
た。したがつて、廃液処理の点においても有用な
レジスト組成物であることが判明した。 Although the above resist composition originally has excellent thermal stability, differential thermal analysis shows that the decomposition point is as high as 570°C, so the slight difficulty is that the appropriate firing temperature and the softening temperature of the substrate are close to each other. Yes, but 520
It was found that the resist composition could be easily removed by brushing with water by baking at an ambient temperature of 15°C for 15 minutes, resulting in good releasability. Although the resist composition of the present invention is generally removed using an acidic solution, it can be easily removed using water, which is industrially advantageous. Furthermore, as a result of analyzing the waste water used for stripping, only inorganic particles such as TiO 2 , SiO 2 , and SnO 2 were detected, and no other harmful substances were detected at all. Therefore, it was found that the resist composition is also useful in terms of waste liquid treatment.
（使用例）
次に、本発明のレジスト組成物を用いて熱分解
法により基板上に酸化錫膜によるパターンを形成
した使用例を示す。(Example of Use) Next, an example of use will be shown in which a pattern of a tin oxide film was formed on a substrate by a thermal decomposition method using the resist composition of the present invention.
図ａ〜ｄはパターン形成のための各工程を示す
断面図である。以下、各工程を順次説明する。 Figures a to d are cross-sectional views showing each process for pattern formation. Each step will be explained in sequence below.
工程(a)；
先ず、前記SPR−557−Ｗレジスト１Kgに対し
てエアロジル 200を50g添加し、B.C.Aで溶剤を
50％置換したものを混合し、１時間混合器で練
り、レジスト組成物を調整した。この状態のレジ
スト組成物でスクリーン印刷機で洗浄済みのガラ
ス基板１上にネガマスク２を形成した。これを図
ａに示す。Step (a): First, 50g of Aerosil 200 was added to 1kg of the SPR-557-W resist, and the solvent was removed with BCA.
The 50% substituted materials were mixed and kneaded in a mixer for 1 hour to prepare a resist composition. Using the resist composition in this state, a negative mask 2 was formed on a cleaned glass substrate 1 using a screen printer. This is shown in Figure a.
工程(b)；
次に、スクリーン印刷したガラス基板１を520
℃に設定された熱風循環焼成炉に投入し、15分間
加熱し、ネガマスク２からガスを脱離させた。こ
のときの高温焼成した状態のネガマスク２′の状
態は図ｂに示すように、TiO2粒子とSiO2粒子の
集合体となつている。Step (b); Next, the screen printed glass substrate 1 is
The negative mask 2 was placed in a hot air circulation firing furnace set at 0.degree. C. and heated for 15 minutes to desorb gas from the negative mask 2. At this time, the state of the negative mask 2' in the high-temperature fired state is an aggregate of TiO 2 particles and SiO 2 particles, as shown in Figure b.
工程(c)；
次に、こうして得られた無機粒子によるネガパ
ターン状態のガラス基板１をベルト式の常圧気相
生成装置に投入し、酸化錫膜を800A°の厚さに一
面全体に生成させた。なお、成膜時のガラス基板
１の温度は500℃で実施した。これを図ｃに示す。Step (c): Next, the glass substrate 1 with a negative pattern made of inorganic particles obtained in this way is placed in a belt-type atmospheric pressure gas phase generation device, and a tin oxide film is formed on the entire surface to a thickness of 800 A°. Ta. Note that the temperature of the glass substrate 1 during film formation was 500°C. This is shown in Figure c.
工程(d)；
最後に、前記状態のガラス基板１を水によりブ
ラツシングして残留レジスト組成物を除去した。
剥離は非常に容易に行われ、膜面は良好でブラシ
傷がないことも顕微鏡で確認できた。Step (d): Finally, the glass substrate 1 in the above state was brushed with water to remove the residual resist composition.
Peeling was very easy, and it was confirmed under a microscope that the film surface was in good condition and there were no scratches from the brush.
このように、パターン形成された最後状態を図
ｄに示す。 The final state after pattern formation is shown in FIG. d.
なお、この試作品についてパターン精度をチエ
ツクするとともに断線、シヨートの有無をチエツ
クした結果、パターン精度を±50μm以内であり、
断線もシヨートもないことを確認した。 Furthermore, as a result of checking the pattern accuracy of this prototype as well as checking for disconnections and shorts, the pattern accuracy was within ±50μm.
I confirmed that there were no breaks or shorts.
（発明の効果）
以上説明してきたように、この発明によれば、
酸化チタンを主成分としたレジストと、酸化珪素
とブチルカルビノールアセテートと、によりリフ
トオフ用レジスト組成物を構成したため、高温に
耐え、熱安定性に優れており、また、残留物の剥
離性が良好でキズのない良好な膜面が得られる。
また、剥離を水によりようにに行うことができる
ので工業上有利であり、廃液中に有害物質が含有
されていないため、公害が発生する恐れがない。
さらに同一工程でパターン形成が可能であるとと
もに工程を簡素化することができるので、コスト
を低減することが可能となる。(Effect of the invention) As explained above, according to this invention,
The lift-off resist composition is composed of a resist mainly composed of titanium oxide, silicon oxide, and butyl carbinol acetate, so it can withstand high temperatures, has excellent thermal stability, and has good residue removal properties. A good film surface without scratches can be obtained.
Furthermore, it is industrially advantageous because it can be peeled off with water, and since no harmful substances are contained in the waste liquid, there is no risk of causing pollution.
Furthermore, since pattern formation is possible in the same process and the process can be simplified, costs can be reduced.
第１図はリフトオフ用レジスト組成物を用いて
熱分解法により基板上に酸化錫膜によるパターン
を形成する各工程を示す断面図である。
１……ガラス基板、２……ネガマスク（レジス
ト組成物）、２′……高温焼成した状態のネガマス
ク、３……酸化錫膜。
FIG. 1 is a cross-sectional view showing each step of forming a pattern of a tin oxide film on a substrate by a thermal decomposition method using a lift-off resist composition. 1...Glass substrate, 2...Negative mask (resist composition), 2'...Negative mask in a state of high temperature firing, 3...Tin oxide film.
Claims (1)
珪素と、ブチルカルビノールアセテートと、から
なることを特徴とするパターン形成用レジスト組
成物。1. A pattern-forming resist composition comprising a resist containing titanium oxide as a main component, silicon oxide, and butyl carbinol acetate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22545686A JPS6380253A (en) | 1986-09-24 | 1986-09-24 | Resist composition for forming pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22545686A JPS6380253A (en) | 1986-09-24 | 1986-09-24 | Resist composition for forming pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6380253A JPS6380253A (en) | 1988-04-11 |
| JPH0466501B2 true JPH0466501B2 (en) | 1992-10-23 |
Family
ID=16829628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22545686A Granted JPS6380253A (en) | 1986-09-24 | 1986-09-24 | Resist composition for forming pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6380253A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5162854B2 (en) * | 2006-07-18 | 2013-03-13 | 富士電機株式会社 | Manufacturing method of semiconductor device |
-
1986
- 1986-09-24 JP JP22545686A patent/JPS6380253A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6380253A (en) | 1988-04-11 |
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