JPH0467759B2 - - Google Patents
Info
- Publication number
- JPH0467759B2 JPH0467759B2 JP62038332A JP3833287A JPH0467759B2 JP H0467759 B2 JPH0467759 B2 JP H0467759B2 JP 62038332 A JP62038332 A JP 62038332A JP 3833287 A JP3833287 A JP 3833287A JP H0467759 B2 JPH0467759 B2 JP H0467759B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- emitting layer
- phosphor
- layer
- shaped electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 79
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 39
- 239000010408 film Substances 0.000 claims description 15
- 239000005083 Zinc sulfide Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 5
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 5
- 239000012190 activator Substances 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 239000004020 conductor Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 229910052748 manganese Inorganic materials 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- -1 rare earth fluorides Chemical class 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- JGIATAMCQXIDNZ-UHFFFAOYSA-N calcium sulfide Chemical compound [Ca]=S JGIATAMCQXIDNZ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- ZEGFMFQPWDMMEP-UHFFFAOYSA-N strontium;sulfide Chemical compound [S-2].[Sr+2] ZEGFMFQPWDMMEP-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Description
【発明の詳細な説明】
〔技術分野〕
この発明は、電界の印加によつて発光する薄膜
型電界発光素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a thin film electroluminescent device that emits light upon application of an electric field.
マンガンや希土類弗化物等を添加した硫化亜鉛
やセレン化亜鉛、希土類元素を添加した硫化カル
シウムや硫化ストロンチウム等の蛍光体薄膜発光
層を、酸化イツトリウム、酸化シリコン、酸化タ
ンタル、酸化アルミニウム、窒化シリコン、チタ
ン酸バリウム、チタン酸鉛、チタン酸ストロンチ
ウム等からなる二つの誘導体層で挟んだ形の薄膜
型電界発光素子は、現在既に、輝度5000cd／m2
以上、発光効率8lｍ／Ｗを実現している。しか
し、このような薄膜型電界発光素子は、駆動電源
として交流の高電圧（100V以上）を必要とする
ため、駆動方法の選択自由度がなく、その他の素
子との連携も難しい。
Phosphor thin film emitting layers such as zinc sulfide or zinc selenide added with manganese or rare earth fluorides, calcium sulfide or strontium sulfide added with rare earth elements, yttrium oxide, silicon oxide, tantalum oxide, aluminum oxide, silicon nitride, etc. Thin-film electroluminescent devices sandwiched between two dielectric layers made of barium titanate, lead titanate, strontium titanate, etc. have already achieved luminance of 5000 cd/m 2
As described above, a luminous efficiency of 8lm/W has been achieved. However, such thin-film electroluminescent devices require high AC voltage (100 V or more) as a driving power source, so there is no freedom in selecting a driving method and it is difficult to link them with other devices.
そこで、このような高電圧型の素子に代わるも
のとして、蛍光体薄膜発光層の両面に直接に電極
を接触させたものが考えられた。このタイプの薄
膜型電界発光素子は、従来のもののように交流の
高電圧を印加する必要がなく、直流の低電圧で駆
動できるため、駆動方法の選択自由度が拡がると
ともに、その他の素子との連携も自由になる。 Therefore, as an alternative to such a high voltage type element, a device in which electrodes are brought into direct contact with both surfaces of a phosphor thin film light emitting layer has been considered. This type of thin-film electroluminescent device does not require the application of a high alternating current voltage like conventional devices, and can be driven with a low direct current voltage, which increases the flexibility in selecting a driving method and allows for integration with other devices. Collaboration becomes free.
このタイプの中でも、マンガンや希土類弗化物
等の付活剤を添加した硫化亜鉛等からなる蛍光体
薄膜発光層に銅等の導電性材料を含有させたもの
は、より低電圧で作動させることができる。 Among these types, those in which a conductive material such as copper is contained in a phosphor thin film light-emitting layer made of zinc sulfide, etc. to which an activator such as manganese or rare earth fluoride is added can be operated at lower voltages. can.
薄膜型電界発光素子の用途の一つに、テレビデ
イスプレイ等のＸ−Ｙドツトマトリクスがある。
このものは、蛍光体薄膜発光層の両面に、互いに
交差するよう２組の帯状電極群を形成してなるも
ので、両帯状電極群の所定の帯状電極に電圧を印
加すると、蛍光体薄膜発光層の、電圧が印加され
た二つの帯状電極に挟まれた部分（画素部分Ｒ）
が発光し、全体として、所定の表示がなされるよ
うになつている。 One of the applications of thin film electroluminescent devices is X-Y dot matrix for television displays and the like.
This device has two sets of band-shaped electrode groups formed on both sides of a phosphor thin film light-emitting layer so as to intersect with each other. When a voltage is applied to a predetermined band-shaped electrode of both band-shaped electrode groups, the phosphor thin film emits light. The part of the layer sandwiched between two strip electrodes to which a voltage is applied (pixel part R)
emits light, and a predetermined display is made as a whole.
第３図および第５図に、そのようなマトリクス
状の薄膜型電界発光素子の一例を示す。この例の
薄膜型電界発光素子は、基板１上に第１の帯状電
極群２…が設けられ、その上に、所定の画素部分
の全てにわたる連続した蛍光体薄膜発光層３が形
成され、さらに、その上に第２の帯状電極群４…
が設けられたものである。 FIGS. 3 and 5 show an example of such a matrix-like thin film electroluminescent device. The thin film electroluminescent device of this example has a first band-shaped electrode group 2 provided on a substrate 1, a continuous phosphor thin film light emitting layer 3 covering all predetermined pixel portions, and further , on which a second band-shaped electrode group 4...
is provided.
このようなマトリクスに、蛍光体薄膜発光層と
して、前述した銅等の導電性材料を含有させたも
のを使用する場合には、各蛍光体薄膜発光層が導
電性を有するため、第４図に等価回路であらわし
たように、第１の帯状電極群２1，２2…と、第２
の帯状電極群４1，４2…とが、抵抗（各画素部分
R11，R12…）で繋がれた形となる。図のような
マトリクスでは、たとえば、帯状電極４2−２2間
に電圧を印加すると、図中一点鎖線で示したよう
に電流が流れ、R22の画素が発光するようになつ
ている。 When using such a matrix as a phosphor thin film light-emitting layer containing a conductive material such as copper as described above, each phosphor thin film light-emitting layer is electrically conductive, so as shown in FIG. As shown in the equivalent circuit, the first band-shaped electrode group 2 1 , 2 2 . . .
The strip electrode groups 4 1 , 4 2 ... are resistors (each pixel part
R 11 , R 12 ...). In the matrix shown in the figure, for example, when a voltage is applied between the strip electrodes 4 2 -2 2 , a current flows as shown by the dashed line in the figure, causing the R 22 pixel to emit light.
ところが、このように画素部分が導電性を有し
ていると、本来R22の画素を発光させるべき電流
の一部が迷走し、いわゆる、クロストークが発生
する。たとえば、図中破線で示した、帯状電極４
２−画素R32−画素R33−画素R23−帯状電極２2と
言う流れのように、所定の帯状電極間に複数の画
素が組み合わされた幾つもの流れができるのであ
る。このような流れは、マトリクスを構成する画
素を全て巻き込み、最終的には全ての画素に電流
が流れることになる。そして、そのうちの幾らか
は発光し、発光しないものにも発光に寄与しない
無効電流が流れることになり、指定した画素の発
光動作を完全に行うことができないようになる。 However, if the pixel portion has conductivity in this way, a part of the current that should normally cause the R22 pixel to emit light goes astray, causing so-called crosstalk. For example, the strip electrode 4 shown by the broken line in the figure
2 - pixel R 32 - pixel R 33 - pixel R 23 - strip electrode 2 2 A number of flows are created in which a plurality of pixels are combined between predetermined strip electrodes. Such a flow involves all the pixels that make up the matrix, and eventually a current flows through all the pixels. Then, some of them emit light, and even in those that do not emit, a reactive current that does not contribute to light emission flows, making it impossible to completely perform the light emitting operation of the designated pixel.
この発明は、上記事情に鑑みてなされたもので
あつて、クロストークが発生せず、指定画素の発
光動作が確実に行える薄膜型電界発光素子を提供
することを目的としている。
The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a thin film electroluminescent device that does not cause crosstalk and allows a designated pixel to reliably emit light.
上記目的を達成するため、この発明は、互いに
交差するよう設けられた２組の帯状電極群間に蛍
光体薄膜発光層が挟まれ、少なくとも一方の組の
帯状電極群が透明導電膜で形成されている薄膜型
電界発光素子であつて、前記２組の帯状電極群の
うちのいずれか一方の帯状電極群と蛍光体薄膜発
光層との間には、蛍光体薄膜発光層を流れる電流
の方向を規制する薄膜ダイオードの層が挟まれて
いることを特徴とする薄膜型電界発光素子を要旨
としている。
In order to achieve the above object, the present invention provides a method in which a phosphor thin film light-emitting layer is sandwiched between two sets of band-shaped electrode groups provided to intersect with each other, and at least one set of band-shaped electrode groups is formed of a transparent conductive film. A thin film type electroluminescent device, in which a direction of current flowing through the phosphor thin film light emitting layer is provided between one of the two sets of strip electrode groups and the phosphor thin film light emitting layer. The gist of this invention is a thin-film electroluminescent device characterized by sandwiching thin-film diode layers that regulate the amount of light.
以下に、この発明を、その一実施例をあらわす
図面を参照しつつ、詳しく説明する。なお、これ
らの図では、上下の帯状電極群が２〜３本の帯状
電極からなつているが、これは、単に構成を模式
的にあらわしたに過ぎない。実際のものは画素数
が多いため、帯状電極群を構成する帯状電極の数
も、もつと多い。 Hereinafter, the present invention will be explained in detail with reference to the drawings showing one embodiment thereof. Note that in these figures, the upper and lower strip-shaped electrode groups are composed of two to three strip-shaped electrodes, but this is merely a schematic representation of the configuration. Since the actual number of pixels is large, the number of band-shaped electrodes that make up the band-shaped electrode group is also large.
第１図にみるように、この実施例の薄膜型電界
発送素子の発光に関する部分の構成は、従来のも
のとほぼ変わらない。すなわち、基板１上に第１
の帯状電極群２…が設けられ、その上に連続した
蛍光体薄膜発光層３が形成され、さらに、その上
方に第２の帯状電極群４…が形成されてなるので
ある。 As shown in FIG. 1, the structure of the light emitting portion of the thin film type electric field emitting device of this embodiment is almost the same as that of the conventional device. That is, the first
A continuous phosphor thin film light-emitting layer 3 is formed thereon, and a second band-like electrode group 4 is formed above it.
基板１としては、無アルカリガラス等、従来と
同様のものが使用できる。 As the substrate 1, the same materials as conventional ones, such as alkali-free glass, can be used.
第１および第２の帯状電極群２…，４…のう
ち、少なくとも一方は、素子外に光を取り出す必
要から、透明導電膜で形成される必要がある。も
う一方は、透明導電膜であつてもよいし、単なる
金属膜であつてもよい。 At least one of the first and second strip-shaped electrode groups 2..., 4... needs to be formed of a transparent conductive film because it is necessary to extract light to the outside of the element. The other may be a transparent conductive film or may be a simple metal film.
透明導電膜の材料としては、酸化スズ、酸化イ
ンジウム、酸化スズを添加した酸化インジウム
（ITO）、酸化亜鉛、酸化アルミニウムを添加した
酸化亜鉛等、通常のものが使用できる。たとえ
ば、高周波スパツタリング法でITOからなる透明
導電膜を形成する場合には、ターゲツトとして、
酸化スズを10モル％程度含む酸化インジウム焼結
体が一般に使用される。これら透明導電膜は、上
記高周波スパツタリング法や電子ビーム蒸着法で
形成でき、その膜厚は3000Å程度が好ましい。 As the material for the transparent conductive film, ordinary materials such as tin oxide, indium oxide, indium oxide (ITO) added with tin oxide, zinc oxide, zinc oxide added with aluminum oxide, etc. can be used. For example, when forming a transparent conductive film made of ITO using the high frequency sputtering method, as a target,
An indium oxide sintered body containing about 10 mol % of tin oxide is generally used. These transparent conductive films can be formed by the above-mentioned high frequency sputtering method or electron beam evaporation method, and the film thickness is preferably about 3000 Å.
金属膜としても、アルミニウム、金等、通常の
電極材料が使用できる。これら金属膜は、真空蒸
着法で形成することができ、その膜厚は2000Å程
度が好ましい。 As the metal film, ordinary electrode materials such as aluminum and gold can be used. These metal films can be formed by vacuum evaporation, and the film thickness is preferably about 2000 Å.
蛍光体薄膜発光層３としては、前述したよう
に、マンガンや希土類弗化物を添加した硫化亜鉛
等が主に用いられるが、その他の蛍光体を使用す
るようであつてもよい。上記構成のものでは、硫
化亜鉛に対するマンガン等の添加量は0.5重量％
程度が好ましい。このような蛍光体薄膜発光層３
の導電性を高めるための導電性材料としては、た
とえば、銅等の金属材料が挙げられる。蛍光体薄
膜層３は、高周波スパツタリング法、電子ビーム
蒸着法等で形成することができ、その膜厚は１〜
4μｍ程度が好ましい。銅等の導電性材料は、画
素部分３ａにのみ含ませるようにすることが好ま
しい。このように、画素部分３ａにのみ導電性材
料を含ませておけば、発光が必要な画素部分３ａ
は導電性が高く、それ以外の部分は導電性が低く
なるため、電流のロスが少なくなり、効率のよい
きれいな発光を行えるようになるのである。 As mentioned above, zinc sulfide to which manganese or rare earth fluoride is added is mainly used as the phosphor thin film light emitting layer 3, but other phosphors may also be used. In the above configuration, the amount of manganese etc. added to zinc sulfide is 0.5% by weight.
degree is preferred. Such a phosphor thin film light emitting layer 3
Examples of the conductive material for increasing the conductivity of the conductive material include metal materials such as copper. The phosphor thin film layer 3 can be formed by a high frequency sputtering method, an electron beam evaporation method, etc., and the film thickness is 1 to 1.
The thickness is preferably about 4 μm. It is preferable that the conductive material such as copper be included only in the pixel portion 3a. In this way, if the conductive material is contained only in the pixel portion 3a, the pixel portion 3a that needs to emit light can be
The area has high conductivity, and the other parts have low conductivity, which reduces current loss and enables efficient and clean light emission.
蛍光体薄膜発光層３の画素部分３ａに銅等の導
電性材料を含ませるには、たとえば、下記の方法
を用いるようにすればよい。 In order to include a conductive material such as copper in the pixel portion 3a of the phosphor thin film light emitting layer 3, the following method may be used, for example.
まず、所定の方法で基板１表面に形成された帯
状電極群２…上の、画素に相当する部分に、真空
蒸着法、高周波スパツタリング法等の方法によつ
て30〜300Å程度の銅薄膜を堆積させる。 First, a copper thin film of about 30 to 300 Å is deposited on the part corresponding to the pixel on the band-shaped electrode group 2 formed on the surface of the substrate 1 by a predetermined method by a method such as vacuum evaporation or high frequency sputtering. let
つぎに、電子ビーム蒸着法や高周波スパツタリ
ング法等の方法によつて、基板１や各帯状電極２
…を覆うように、膜厚１〜4μｍ程度の連続した
蛍光体薄膜発光層３を形成する。 Next, the substrate 1 and each strip electrode 2 are formed by a method such as an electron beam evaporation method or a high frequency sputtering method.
A continuous phosphor thin film light-emitting layer 3 with a thickness of about 1 to 4 μm is formed so as to cover...
そして、真空中、あるいは、アルゴンガス、窒
化ガス等の不活性ガス中で600〜650℃、１〜４時
間程度の加熱を行うと、前記銅が画素部分３ａ中
に熱拡散し、そこに含まれるのである。 Then, when heating is performed at 600 to 650°C for about 1 to 4 hours in a vacuum or an inert gas such as argon gas or nitride gas, the copper is thermally diffused into the pixel portion 3a and is contained therein. It is possible.
なお、銅薄膜の形成と蛍光体薄膜発光層３の形
成とは、逆の順序で行うようであつてもよいし、
蛍光体薄膜発光層３の上下に銅薄膜を形成するよ
うであつてもよい。 Note that the formation of the copper thin film and the formation of the phosphor thin film light emitting layer 3 may be performed in the reverse order, or
A copper thin film may be formed above and below the phosphor thin film light emitting layer 3.
蛍光体薄膜発光層３に銅等の導電性材料を含ま
せる方法としては、これ以外の方法を用いること
もできる。特に、画素部分３ａと、それ以外の部
分とを区別しない場合には、通常用いられるあら
ゆる方法を適用できる。たとえば、銅と蛍光体と
を別の蒸発源から同時に基板上に堆積させる多元
蒸着法や、あらかじめ、蛍光体中に銅を含ませた
蒸発材料を用いる電子ビーム蒸着法、高周波スパ
ツタリング法等を用いることができるのである。 Other methods may also be used to incorporate the conductive material such as copper into the phosphor thin film light emitting layer 3. In particular, when the pixel portion 3a and other portions are not distinguished, any commonly used method can be applied. For example, a multi-dimensional evaporation method in which copper and phosphor are simultaneously deposited on a substrate from different evaporation sources, an electron beam evaporation method using an evaporation material containing copper in the phosphor in advance, a high-frequency sputtering method, etc. are used. It is possible.
この発明の薄膜型電界発光素子は、一方の帯状
電極群と蛍光体薄膜発光層３との間に、蛍光体薄
膜発光層３を流れる電流の方向を規制する薄膜ダ
イオードの層５が挟まれていることを特徴とす
る。ここでは、そのような薄膜ダイオード層５
が、上側の帯状電極群４…と蛍光体薄膜発光層３
との間に形成されているが、下側の帯状電極群２
…との間に形成されるようであつてもよい。 In the thin film electroluminescent device of the present invention, a thin film diode layer 5 for regulating the direction of current flowing through the phosphor thin film light emitting layer 3 is sandwiched between one band-shaped electrode group and the phosphor thin film light emitting layer 3. It is characterized by the presence of Here, such a thin film diode layer 5
However, the upper band-shaped electrode group 4... and the phosphor thin film light emitting layer 3
Although it is formed between the lower band-shaped electrode group 2
It may be formed between...
図の実施例における薄膜ダイオード層５は、ア
モルフアスシリコンからなるｐ層（ホウ素ドープ
層）５ａ、ｉ層（ノンドープ層）５ｂ、ｎ層（リ
ンドープ層）５ｃで構成された、いわゆる、PIN
型のものである。このように、薄膜ダイオード層
５がアモルフアスシリコンの場合、この実施例の
ように上側の帯状電極群４…と蛍光体薄膜発光層
３との間に薄膜ダイオード層５が形成されている
方がよい。薄膜ダイオード層５が下側の帯状電極
群２…と蛍光体薄膜発光層３との間に形成されて
いる場合、後の蛍光体薄膜発光層３の導電性向上
用の銅の熱拡散の際に加わる高温でアモルフアス
シリコンの薄膜ダイオード層５の特性が変化し本
来の性能を十分に発揮できないことが起こるかも
しれないからである。薄膜ダイオード層５が上側
の帯状電極群４…と蛍光体薄膜発光層３との間に
形成されている場合は、前記銅の熱拡散が既に済
んでいて高温が加わることがないので、アモルフ
アスシリコンの薄膜ダイオード層５の特性が変化
する心配がないのである。各層は、グロー放電分
解法等によつて形成することができ、その膜厚
は、形成する薄膜ダイオード層５の性能にもよる
が、一般的には、ｐ層が300Å、ｉ層が1μｍ、ｎ
層が300Å程度あればよい。なお、この発明で用
いられる薄膜ダイオード層５の層構成は、上記の
ようなPIN型のものに限らない。また、各層は、
たとえば、セレン化カドミウム、硫化カドミウム
等の化合物半導体などで形成されるようであつて
もよい。 The thin film diode layer 5 in the illustrated embodiment is a so-called PIN, which is composed of a p-layer (boron-doped layer) 5a, an i-layer (non-doped layer) 5b, and an n-layer (phosphorous-doped layer) 5c made of amorphous silicon.
It is of type. In this way, when the thin film diode layer 5 is made of amorphous silicon, it is better to form the thin film diode layer 5 between the upper strip electrode group 4 and the phosphor thin film light emitting layer 3 as in this embodiment. good. When the thin film diode layer 5 is formed between the lower band-shaped electrode group 2 and the phosphor thin film light emitting layer 3, during the thermal diffusion of copper for improving the conductivity of the phosphor thin film light emitting layer 3 later. This is because the characteristics of the amorphous silicon thin film diode layer 5 may change due to the high temperature applied to the amorphous silicon, and the original performance may not be fully exhibited. When the thin film diode layer 5 is formed between the upper band-shaped electrode group 4 and the phosphor thin film light emitting layer 3, the thermal diffusion of the copper has already been completed and high temperature is not applied. There is no fear that the characteristics of the silicon thin film diode layer 5 will change. Each layer can be formed by a glow discharge decomposition method, etc., and the film thickness depends on the performance of the thin film diode layer 5 to be formed, but generally the p layer is 300 Å, the i layer is 1 μm, n
It is sufficient that the layer has a thickness of about 300 Å. Note that the layer structure of the thin film diode layer 5 used in the present invention is not limited to the PIN type as described above. In addition, each layer is
For example, it may be formed of a compound semiconductor such as cadmium selenide or cadmium sulfide.
以上のような薄膜ダイオード層５が形成され
た、この発明の薄膜型電界発光素子を等価回路で
あらわすと、第２図のようになる。つまり、第１
の帯状電極群２1，２2…と、第２の帯状電極群４
１，４2…とが、抵抗（各画素部分R11，R12…）
と、これに接続されたダイオードD11，D12…と
によつて繋がれた状態となる。これを第１図で説
明すると、薄膜ダイオード層５の、各画素部分Ｒ
の上の部分がダイオードＤとなる。 FIG. 2 shows an equivalent circuit diagram of the thin film electroluminescent device of the present invention in which the thin film diode layer 5 as described above is formed. In other words, the first
band-shaped electrode groups 2 1 , 2 2 . . . and a second band-shaped electrode group 4
1 , 4 2 ... are resistors (each pixel portion R 11 , R 12 ...)
and diodes D 11 , D 12 . . . connected thereto. To explain this with reference to FIG. 1, each pixel portion R of the thin film diode layer 5
The upper part becomes diode D.
ここで、たとえば、帯状電極４2−２2間に電圧
を印加すると、図中一点鎖線で示したように電流
が流れ、R22の画素が発光する。この際、第４図
に示した従来のものでは、迷走電流によるクロス
トークが発生していた。これに対し、この発明の
薄膜型電界発光素子では、各画素Ｒに繋がれたダ
イオードＤによつてそれが防止される。これは、
以下の理由による。 Here, for example, when a voltage is applied between the strip electrodes 4 2 -2 2 , a current flows as shown by the dashed line in the figure, and the pixel R 22 emits light. At this time, in the conventional device shown in FIG. 4, crosstalk occurred due to stray current. On the other hand, in the thin film electroluminescent device of the present invention, the diode D connected to each pixel R prevents this. this is,
This is due to the following reasons.
指定画素以外へ流れる迷走電流は、第４図に破
線で示したように、複数の画素を流れるのである
が、その中に必ず、逆電流が流れる画素が発生す
る。たとえば、第４図ではR33の画素がこれに相
当する。 The stray current flowing to a pixel other than the designated pixel flows through a plurality of pixels, as shown by the broken line in FIG. 4, but there is always a pixel in which a reverse current flows. For example, in FIG. 4, this corresponds to pixel R33 .
これに対し、この発明の薄膜型電界発光素子で
は、各画素に必ず一つずつ、電流の流れを規制す
るダイオードＤが設けられているため、逆電流の
流れる必要がある迷走電流は、それによつて阻止
され、発生しない。もちろん、指定画素への電流
は順電流であるため、流れることができ、指定画
素の発光が行われる。 On the other hand, in the thin-film electroluminescent device of the present invention, each pixel is provided with one diode D that regulates the flow of current, so stray current that requires a reverse current to flow is eliminated by this diode D. It is prevented and does not occur. Of course, since the current to the designated pixel is a forward current, it can flow, and the designated pixel emits light.
このため、この発明の薄膜型電界発光素子にお
いては、クロストークが発生せず、指定画素の発
光を確実に行えるようになるのである。 Therefore, in the thin film type electroluminescent device of the present invention, crosstalk does not occur, and the designated pixel can reliably emit light.
この発明の薄膜型電界発光素子は、以上のよう
であり、互いに交差するよう設けられた２組の帯
状電極群間に蛍光体薄膜発光層が挟まれ、少なく
とも一方の組の帯状電極群が透明導電膜で形成さ
れている薄膜型電界発光素子であつて、前記２組
の帯状電極群のうちのいずれか一方の帯状電極群
と蛍光体薄膜発光層との間には、蛍光体薄膜発光
層を流れる電流の方向を規制する薄膜ダイオード
の層が挟まれており、クロストークの発生がこの
薄膜ダイオード層によつて防止されるため、指定
画素の発光動作が確実に行えるようになる。
The thin film electroluminescent device of the present invention is as described above, in which a phosphor thin film light emitting layer is sandwiched between two sets of band-shaped electrode groups provided to intersect with each other, and at least one set of band-shaped electrode groups is transparent. A thin film electroluminescent device formed of a conductive film, in which a phosphor thin film light emitting layer is provided between one of the two sets of strip electrode groups and the phosphor thin film light emitting layer. A layer of thin film diodes is sandwiched between the two layers to regulate the direction of current flowing through the pixel, and crosstalk is prevented by this thin film diode layer, so that the light emitting operation of the designated pixel can be performed reliably.
第１図はこの発明の薄膜型電界発光素子の一実
施例の構成を模式的にあらわす層構成図、第２図
はこの実施例を等価的にあらわす回路図、第３図
は従来の薄膜型電界発光素子の一例を模式的にあ
らわす層構成図、第４図はこの従来例を等価的に
あらわす回路図、第５図はマトリクス構造の斜視
図である。
２，４……帯状電極、３……蛍光体薄膜発光
層、５……薄膜ダイオード層、Ｄ……ダイオー
ド、Ｒ……画素。
FIG. 1 is a layer configuration diagram schematically showing the structure of an embodiment of the thin film type electroluminescent device of the present invention, FIG. 2 is a circuit diagram equivalently showing this embodiment, and FIG. 3 is a conventional thin film type electroluminescent device. FIG. 4 is a layer configuration diagram schematically showing an example of an electroluminescent device, FIG. 4 is a circuit diagram equivalently showing this conventional example, and FIG. 5 is a perspective view of the matrix structure. 2, 4... Strip electrode, 3... Phosphor thin film light emitting layer, 5... Thin film diode layer, D... Diode, R... Pixel.
Claims (1)
極群間に蛍光体薄膜発光層が挟まれ、少なくとも
一方の組の帯状電極群が透明導電膜で形成されて
いる薄膜型電界発光素子であつて、前記２組の帯
状電極群のうちのいずれか一方の帯状電極群と蛍
光体薄膜発光層との間には、蛍光体薄膜発光層を
流れる電流の方向を規制する薄膜ダイオードの層
が挟まれていることを特徴とする薄膜型電界発光
素子。 ２ 蛍光体薄膜発光層が、付活剤を含む硫化亜鉛
からなる蛍光体と、この蛍光体の導電性を高める
材料とで構成されている特許請求の範囲第１項記
載の薄膜型電界発光素子。[Claims] 1. A thin film type in which a phosphor thin film light-emitting layer is sandwiched between two sets of band-shaped electrode groups arranged to intersect with each other, and at least one set of band-shaped electrode groups is formed of a transparent conductive film. In the electroluminescent device, a thin film is provided between one of the two sets of strip-shaped electrode groups and the phosphor thin-film light-emitting layer to regulate the direction of current flowing through the phosphor thin-film light-emitting layer. A thin-film electroluminescent device characterized by sandwiching diode layers. 2. The thin film electroluminescent device according to claim 1, wherein the phosphor thin film emitting layer is composed of a phosphor made of zinc sulfide containing an activator and a material that increases the conductivity of this phosphor. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62038332A JPS63205092A (en) | 1987-02-21 | 1987-02-21 | Thin film electroluminescence device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62038332A JPS63205092A (en) | 1987-02-21 | 1987-02-21 | Thin film electroluminescence device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63205092A JPS63205092A (en) | 1988-08-24 |
| JPH0467759B2 true JPH0467759B2 (en) | 1992-10-29 |
Family
ID=12522324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62038332A Granted JPS63205092A (en) | 1987-02-21 | 1987-02-21 | Thin film electroluminescence device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63205092A (en) |
-
1987
- 1987-02-21 JP JP62038332A patent/JPS63205092A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63205092A (en) | 1988-08-24 |
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