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JPH0469408B2 - - Google Patents
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JPH0469408B2 - - Google Patents

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Publication number
JPH0469408B2
JPH0469408B2 JP59130434A JP13043484A JPH0469408B2 JP H0469408 B2 JPH0469408 B2 JP H0469408B2 JP 59130434 A JP59130434 A JP 59130434A JP 13043484 A JP13043484 A JP 13043484A JP H0469408 B2 JPH0469408 B2 JP H0469408B2
Authority
JP
Japan
Prior art keywords
wafer
stage
exposure
chip
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59130434A
Other languages
Japanese (ja)
Other versions
JPS618923A (en
Inventor
Tatsuro Kawabata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59130434A priority Critical patent/JPS618923A/en
Publication of JPS618923A publication Critical patent/JPS618923A/en
Publication of JPH0469408B2 publication Critical patent/JPH0469408B2/ja
Granted legal-status Critical Current

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は露光装置、詳しくはステツパー装置に
より露光するに際し、ウエハを回転させることに
よりウエハステージの移動距離を少なくし、ウエ
ハステージの小型化とその動きの精度向上が実現
されるステツパー装置に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention reduces the moving distance of the wafer stage by rotating the wafer when exposing the wafer using an exposure device, more specifically, a stepper device, thereby reducing the size of the wafer stage. The present invention relates to a stepper device that improves the precision of its movement.

レンズを用いるパターンのウエハ上への転写技
術は、ウエハサイズが5cm程度(2インチ)のと
きには一括露光が可能でマスクからウエハへ1対
1で転写露光していた。
The technique of transferring a pattern onto a wafer using a lens allows batch exposure when the wafer size is about 5 cm (2 inches), and transfers exposure from the mask to the wafer on a one-to-one basis.

しかし、ウエハサイズの大型化とパターンの微
細化要求にともない一括露光は不可能となり、ウ
エハ全面をいくつかに分割してステツプ状に露光
する方式が開発され、現在では1チツプずつ露光
する方式がとられている。
However, as the size of wafers increases and the demands for finer patterns become larger, batch exposure becomes impossible, and a method has been developed in which the entire wafer is divided into several parts and exposed stepwise.Currently, there is a method that exposes each chip one by one. It is taken.

〔従来の技術〕[Conventional technology]

上記したステツプ状露光には第4図に示される
縮小投影型露光装置が用いられ、同図において、
21は照明光学系、22はレチクル、23はコン
デンサレンズ、24はステツプモニタ光学系、2
5はレチクルアラインメント光学系、26は
ITVカメラ、27は縮小投影レンズ、28はオ
ートフオーカス検出系、29はX軸干渉計、30
はY軸干渉計、31はウエハ、32はウエハアラ
インメント光学系、33はXYステージ、34は
基準マーク、35はITVカメラ、36はHe−Ne
レーザ光源を示す。XYステージ33はX方向と
Y方向に移動可能な公知のステージである。
A reduction projection type exposure apparatus shown in FIG. 4 is used for the stepwise exposure described above, and in the same figure,
21 is an illumination optical system, 22 is a reticle, 23 is a condenser lens, 24 is a step monitor optical system, 2
5 is a reticle alignment optical system, 26 is a reticle alignment optical system;
ITV camera, 27 is a reduction projection lens, 28 is an autofocus detection system, 29 is an X-axis interferometer, 30
is a Y-axis interferometer, 31 is a wafer, 32 is a wafer alignment optical system, 33 is an XY stage, 34 is a reference mark, 35 is an ITV camera, and 36 is a He-Ne
A laser light source is shown. The XY stage 33 is a known stage movable in the X direction and the Y direction.

縮小投影型露光装置のアラインメント方式は2
つに大別され、1つはオフ・アクシス方式であ
り、それは第2図を参照すると、レチクルの位置
決めは上側に設けられたRxy、RQで示された2
本のアラインメント光学系で行い、ウエハの方
は、レチクル側とは独立したWx、Wy、WQの3
本の顕微鏡で位置決めを行う。しかる後に、ウエ
ハをのせたステージを移動させ、その移動量はレ
ーザ干渉計によつて測定しながら定められた露光
位置へ送り込む。
There are two alignment methods for reduction projection exposure equipment.
One is the off-axis method, and as shown in Figure 2, the reticle is positioned using the two
This is done using a book alignment optical system, and on the wafer side, there are three
Perform positioning using a book microscope. Thereafter, the stage on which the wafer is placed is moved, and the amount of movement is measured by a laser interferometer, and the wafer is sent to a predetermined exposure position.

オフ・アクシス方式は専用の顕微鏡を用いて良
好なSNの信号を得ることができるが、2つの問
題がある。1つは、アラインメント完了後ウエハ
を露光位置すなわち投影レンズの光軸の位置へ移
動させなければならない。その間の移動量はレー
ザ干渉計で測定されてはいるものの、ウエハ31
をのせたXYステージ33にヨーイングがあると
無視できない誤差が出る。これを避けるために
Wx、Wy、WQの3本の顕微鏡をそれぞれ光軸を
通るX軸、Y軸上に配置し、いわゆるアツベの誤
差を除去する構造となつている。
Although the off-axis method can obtain good SN signals using a dedicated microscope, there are two problems. First, after the alignment is completed, the wafer must be moved to the exposure position, that is, the position of the optical axis of the projection lens. Although the amount of movement during that time was measured by a laser interferometer, the wafer 31
If there is yawing in the XY stage 33 on which it is mounted, an error that cannot be ignored will occur. to avoid this
Three microscopes, Wx, Wy, and WQ, are placed on the X and Y axes passing through the optical axis, respectively, and are designed to eliminate so-called Atsube's errors.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

現在の露光装置、特にステツパー装置はウエハ
の直径分の移動距離が必要であるので、ウエハの
大口径化にともなつて移動ステージ(XYステー
ジ)も大になり、精度が悪くなり、露光装置全体
が大型化する問題がある。
Current exposure equipment, especially stepper equipment, requires a moving distance equal to the diameter of the wafer, so as the diameter of the wafer becomes larger, the moving stage (XY stage) also becomes larger, reducing accuracy and reducing the overall length of the exposure equipment. There is a problem that the size of the

〔問題点を解決するための手段〕[Means for solving problems]

本発明は、上記問題点を解消した露光装置を提
供するもので、その手段は、ステツパー装置によ
る露光において、ウエハが載置されたウエハステ
ージのXY方向移動に、よりウエハの1/2、1/4…
…1/n(ただしnは正の整数)部分を露光した
後に、当該ウエハステージを操作してウエハをそ
れぞれ1/2、1/4……1/n回転させ前記した露光
を行い、以下かかる操作を繰り返しウエハ全面を
露光する構成としたことを特徴とする露光装置に
よつてなされる。
The present invention provides an exposure apparatus that solves the above-mentioned problems.The present invention provides an exposure apparatus that solves the above-mentioned problems. /Four…
...After exposing 1/n (where n is a positive integer) portion, the wafer is rotated by 1/2, 1/4...1/n by operating the wafer stage, respectively, and the above exposure is performed. This is performed using an exposure apparatus characterized in that the operation is repeated to expose the entire surface of the wafer.

〔作用〕[Effect]

上記露光装置特にステツパー装置は、露光をな
すときに試料例えばウエハを1/2、1/4……1/n
回転させ、例えばX方向のステージの動きを減ず
ることによりウエハステージの移動距離をすくな
くし、XYステージの小型化と高精度化を実現す
るものである。
The above-mentioned exposure apparatus, particularly the stepper apparatus, is used to expose a sample such as a wafer to 1/2, 1/4...1/n.
By rotating the wafer stage and reducing the movement of the stage in, for example, the X direction, the moving distance of the wafer stage is reduced, and the XY stage is made smaller and more precise.

〔実施例〕〔Example〕

以下図面を参照して本発明の実施例を詳細に説
明する。
Embodiments of the present invention will be described in detail below with reference to the drawings.

本発明は、ステツパー装置がチツプを1個ずつ
露光して行くことを利用して、露光の際に、ウエ
ハを1/2、1/4……回転させて、ウエハステージの
移動距離を少なくしようとするものであり、その
目的でXYステージ33を1/2、1/4……回転させ
る。
The present invention takes advantage of the fact that the stepper device exposes chips one by one, and during exposure, rotates the wafer by 1/2, 1/4... to reduce the travel distance of the wafer stage. For that purpose, the XY stage 33 is rotated 1/2, 1/4...

ウエハを1/2回転する実施例を第1図を参照し
て説明する。
An embodiment in which the wafer is rotated by 1/2 will be described with reference to FIG.

先ず第1図aに示される如く、ウエハ31の上
半部分を露光する。そのために、ウエハステージ
は図の最上列左端にあるチツプ31aに始まり1
チツプ分ずつX方向に移動して最右端のチツプ3
1mを露光する。なお、図においては簡略化のた
めチツプは模式的に大なる寸法で示す。
First, as shown in FIG. 1a, the upper half of the wafer 31 is exposed. For this purpose, the wafer stage starts from chip 31a at the left end of the top row in the figure.
Move in the X direction by chips and move to the rightmost chip 3
Expose 1m. In addition, in the drawings, the chip is schematically shown with large dimensions for the sake of simplification.

次いで、チツプ31mからY方向に1チツプ分
移動し、前とは逆のX方向に移動する。またはそ
れに代えて、チツプ31aの下のチツプのところ
に、移動し、X方向に最初に述べたと同様に移動
してもよい。
Next, it moves one chip in the Y direction from the chip 31m, and moves in the X direction opposite to the previous one. Alternatively, it may be moved to the tip below tip 31a and moved in the X direction in the same manner as described at the beginning.

上記の如くにしてウエハの上半部分の露光がす
べて終ると、ウエハ31を1/2回転し、第3図b
に示される如く残りの半部分を露光する。かかる
露光方法によると、ウエハステージは、X方向に
ウエハの直径分だけ移動するが、Y方向にはウエ
ハの直径の半分の距離を移動するだけでよい。
When the exposure of the upper half of the wafer is completed in the manner described above, the wafer 31 is rotated 1/2 and the image shown in FIG.
Expose the remaining half as shown in . According to this exposure method, the wafer stage moves in the X direction by the diameter of the wafer, but only needs to move in the Y direction by a distance that is half the diameter of the wafer.

ウエハを1/4回転させる実施例は第2図に示さ
れ、先ず同図aに示される如くウエハの左上1/4
部分をチツプ41aから41nまで露光し、次い
でウエハを1/4回転し同図bに示される如く第4
図aで露光された部分の下の1/4部分を前と同様
に露光し、次いで同図cに示される如く次の1/4
部分を露光し、最後に同図dに示される如く残り
の1/4部分を露光する。この例において、ウエハ
ステージは、X方向とY方向にウエハの直径の半
分の距離だけ移動すればよい。なお第2図におい
ても、チツプは模式的に大なる寸法で図示した。
An example of rotating the wafer by 1/4 is shown in Figure 2. First, as shown in Figure a, the upper left quarter of the wafer is
The wafer is exposed from chips 41a to 41n, and then the wafer is rotated 1/4 and the fourth chip is exposed as shown in FIG.
Expose the lower 1/4 of the area exposed in figure a as before, then the next 1/4 as shown in figure c.
Then, finally, the remaining 1/4 part is exposed as shown in d of the same figure. In this example, the wafer stage only needs to move a distance of half the diameter of the wafer in the X and Y directions. In FIG. 2 as well, the chip is schematically illustrated with larger dimensions.

第3図に示される実施例においては、先ず同図
aに示される如くウエハの半径方向の最外側のチ
ツプ51aを露光する。次にウエハを1/n回転
し、同図bに示される如くウエハの半径方向最外
側のチツプ52aを露光し、順次この操作を繰り
返してチツプ51aに戻ると、ウエハの半径方向
にチツプ51aの真直ぐ下に位置するチツプ51
bを露光し、順次前述した露光をウエハの中心部
分の近くまで繰り返す。
In the embodiment shown in FIG. 3, first, the radially outermost chip 51a of the wafer is exposed, as shown in FIG. 3a. Next, the wafer is rotated 1/n, and the outermost chip 52a in the radial direction of the wafer is exposed as shown in FIG. Chip 51 located directly below
b is exposed, and the above-described exposure is sequentially repeated up to the vicinity of the center of the wafer.

または上記に代えて、ウエハの半径方向にウエ
ハの中心に最も近いチツプから露光を始め、上記
したと同じ操作を繰り返してもよい。露光を外側
から始めるか中心近くから始めるかは適宜選択す
るが、ウエハの中心近くではウエハの回転を適宜
変更するとよい。
Alternatively, the same operations as described above may be repeated, starting from the chip closest to the center of the wafer in the radial direction of the wafer. It is appropriate to choose whether to start exposure from the outside or near the center of the wafer, but it is preferable to change the rotation of the wafer as appropriate near the center of the wafer.

かくすることによつて、ウエハステージのX方
向の移動はウエハ直径の半分かまたは0となり、
Y方向の移動はウエハ直径の半分に減少されるの
で、装置の小型化が実現され、コストが低減さ
れ、精度が高められる。
By doing this, the movement of the wafer stage in the X direction is half the wafer diameter or zero,
Since the movement in the Y direction is reduced to half the wafer diameter, equipment miniaturization is achieved, reducing cost and increasing accuracy.

上記はウエハの露光についての例であつたが、
本発明の適用範囲はその場合に限定されるもので
はなく、検査装置等にも適用可能である。
The above was an example of wafer exposure, but
The scope of application of the present invention is not limited to that case, but can also be applied to inspection devices and the like.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、露光また
は検査目的等のためのウエハステージの操作にお
いて、ウエハを1/2、1/4……1/n回転させるこ
とにより同ステージのX方向移動はウエハ直径の
1/2かまたは0に、またY方向移動はウエハ直径
の1/2に減少されるので、装置の小型化と精度を
高めるのに効果大である。
As explained above, according to the present invention, when operating a wafer stage for exposure or inspection purposes, the stage can be moved in the X direction by rotating the wafer by 1/2, 1/4...1/n. Since the movement in the Y direction is reduced to 1/2 or 0 of the wafer diameter, and the movement in the Y direction is reduced to 1/2 of the wafer diameter, this is very effective in reducing the size of the device and increasing precision.

【図面の簡単な説明】[Brief explanation of drawings]

第1図a,b、第2図aないしd、第3図a,
bは本発明によるウエハの回転を示す平面図、第
4図は従来の縮小露光装置の配置図である。 図において、31はウエハ、33はXYステー
ジ、31a……31m,41a……41n,51
a,51b,52a,52bはチツプをそれぞれ
示す。
Figure 1 a, b, Figure 2 a to d, Figure 3 a,
4b is a plan view showing the rotation of a wafer according to the present invention, and FIG. 4 is a layout diagram of a conventional reduction exposure apparatus. In the figure, 31 is a wafer, 33 is an XY stage, 31a...31m, 41a...41n, 51
a, 51b, 52a, and 52b indicate chips, respectively.

Claims (1)

【特許請求の範囲】[Claims] 1 ウエハが載置されたウエハステージのXY方
向移動によりウエハの1/2、1/4……1/n(ただ
しnは正の整数)部分を露光した後に、当該ウエ
ハステージを操作してウエハをそれぞれ1/2、1/4
……1/n回転させ前記した露光を行い、以下か
かる操作を繰り返しウエハ全面を露光する構成と
したことを特徴とする露光装置。
1 After exposing 1/2, 1/4...1/n (where n is a positive integer) of the wafer by moving the wafer stage on which the wafer is placed in the XY directions, operate the wafer stage to remove the wafer. 1/2 and 1/4 respectively
An exposure apparatus characterized by having a configuration in which the above-described exposure is performed by rotating the wafer by 1/n, and the above operation is then repeated to expose the entire surface of the wafer.
JP59130434A 1984-06-25 1984-06-25 Exposing apparatus Granted JPS618923A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59130434A JPS618923A (en) 1984-06-25 1984-06-25 Exposing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59130434A JPS618923A (en) 1984-06-25 1984-06-25 Exposing apparatus

Publications (2)

Publication Number Publication Date
JPS618923A JPS618923A (en) 1986-01-16
JPH0469408B2 true JPH0469408B2 (en) 1992-11-06

Family

ID=15034142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59130434A Granted JPS618923A (en) 1984-06-25 1984-06-25 Exposing apparatus

Country Status (1)

Country Link
JP (1) JPS618923A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0628224B2 (en) * 1985-10-29 1994-04-13 キヤノン株式会社 Exposure method and apparatus
JPH04105069U (en) * 1991-02-18 1992-09-10 株式会社東芝 elevator
JP2559470Y2 (en) * 1991-05-13 1998-01-19 フジテック株式会社 Elevator cab fragrance device

Also Published As

Publication number Publication date
JPS618923A (en) 1986-01-16

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