JPH0470790B2 - - Google Patents
Info
- Publication number
- JPH0470790B2 JPH0470790B2 JP58004616A JP461683A JPH0470790B2 JP H0470790 B2 JPH0470790 B2 JP H0470790B2 JP 58004616 A JP58004616 A JP 58004616A JP 461683 A JP461683 A JP 461683A JP H0470790 B2 JPH0470790 B2 JP H0470790B2
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- unit
- transparent electrode
- diodes
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/70—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising bypass diodes
- H10F19/75—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising bypass diodes the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
本発明は透明絶縁基板上に形成された直列接続
型薄膜太陽電池に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to series-connected thin film solar cells formed on transparent insulating substrates.
第１図はそのような太陽電池を示し、光はガラ
ス等からなる透明絶縁基板１を通過して光電発生
領域に入射する。基板１の上には透明電極２を介
してアモルフアスシリコン（ａ−Si）層３が形成
される。ａ−Si層は透明電極２の側からｐ層、ｉ
層（ノンドープ層）、ｎ層の順にパターン状に分
離形成されている。次に金属電極４が同等にパタ
ーン形成されて複数の太陽電池ユニツト１０がで
き上がる。金属電極４が隣接ユニツトの透明電極
２に接触するように形成されることにより、一挙
に直列接続された集積型の太陽電池セルができあ
がる。この薄膜太陽電池の使用中において、単位
ユニツト１０の何れかが局所的に遮蔽物で覆わ
れ、発電能力が劣つたとき、そのユニツトが逆バ
イアスを受けて劣化したり、太陽電池全体の発電
能力を低下させたりすることがないようにダイオ
ード１１を逆並列に接続することが知られれてい
る。ところが、保護ダイオードを薄膜太陽電池と
別に調達して接続することは、材料費、リード付
け工数等の点でコストがかさみ、低コスト太陽電
池を作成する上からは、マイナスの要因を生じる
ことになる。 FIG. 1 shows such a solar cell, in which light passes through a transparent insulating substrate 1 made of glass or the like and enters a photoelectric generation region. An amorphous silicon (a-Si) layer 3 is formed on a substrate 1 with a transparent electrode 2 interposed therebetween. The a-Si layer is a p layer, an i layer from the transparent electrode 2 side.
A layer (non-doped layer) and an n layer are formed separately in the order of a pattern. Next, the metal electrodes 4 are patterned in the same manner to form a plurality of solar cell units 10. By forming the metal electrode 4 in contact with the transparent electrode 2 of the adjacent unit, integrated solar cells connected in series are completed at once. During use of this thin-film solar cell, if any of the units 10 is locally covered with a shield and its power generation capacity is degraded, that unit may be subjected to reverse bias and deteriorate, or the power generation capacity of the entire solar cell may be degraded. It is known that the diodes 11 are connected in antiparallel to avoid lowering the diodes 11. However, procuring and connecting protection diodes separately from thin-film solar cells increases costs in terms of material costs, lead-attaching man-hours, etc., which is a negative factor when it comes to creating low-cost solar cells. Become.
本発明は各ユニツトにこのような保護ダイオー
ドが接続され、しかもリード付けの手数のない薄
膜太陽電池を提供することを目的とする。 It is an object of the present invention to provide a thin film solar cell in which each unit is connected with such a protection diode and there is no need to attach leads.
この目的は、透明絶縁基板上に透明電極と非晶
質半導体層と金属電極とがこの順に積層されてな
る太陽電池ユニツトおよび同じ層構成のダイオー
ドの複数個がそれぞれ共通の前記基板上に形成さ
れ、前記金属電極と透明電極のそれぞれの延長部
の接続により隣接太陽電池ユニツト相互間の直列
接続および各太陽電池ユニツトとこのユニツト内
のダイオードとの逆並列接続がそれぞれ構成され
てなる太陽電池において、各太陽電池ユニツトに
は、逆バイアスが加わらないようにそれぞれ複数
のダイオードが配置されると共に各ユニツト内に
おけるダイオードの間隔を、その順方向電圧値と
その間隔の中点からダイオードまでの透明電極の
電圧ドロツプ値との和が太陽電池ユニツトの逆耐
圧値より小さくなるようにしたことにより達成さ
れる。 This purpose is to form a solar cell unit in which a transparent electrode, an amorphous semiconductor layer, and a metal electrode are laminated in this order on a transparent insulating substrate, and a plurality of diodes having the same layer structure, respectively, on a common substrate. , a solar cell in which a series connection between adjacent solar cell units and an anti-parallel connection between each solar cell unit and a diode in this unit are formed by connecting the respective extensions of the metal electrode and the transparent electrode, A plurality of diodes are arranged in each solar cell unit so that no reverse bias is applied, and the spacing between the diodes in each unit is determined based on the forward voltage value and the transparent electrode distance from the midpoint of the spacing to the diode. This is achieved by making the sum with the voltage drop value smaller than the reverse breakdown voltage value of the solar cell unit.
以下図を引用して本発明の実施例について説明
する。第２図ａ〜ｃにおいて、ａは平面図、ｂは
ａのＡ−A′線断面図、ｃはａのＢ−B′線断面図
である。複数の太陽電池ユニツト２０，３０，４
０，５０は第１図のセル１０と同様な構造でそれ
ぞれ透明絶縁基板１の上に積層された透明電極２
２，３２，４２，５２、ａ−Si層２３，３３，４
３，５３、金属電極２４，３４，４４，５４から
形成されている。透明電極３２，４２，５２は隣
接ユニツトの金属電極２４，３４，４４とそれぞ
れ電気的に接続されているので、各太陽電池ユニ
ツト２０，３０，４０，５０は直列に接続されて
いることになる。太陽電池ユニツトの間に等距離
で配置された保護ダイオード６１，７１，８１，
９１は太陽電池ユニツトと同様透明電極６２，７
２，８２，９２、ａ−Si層６３，７３，８３，９
３、金属電極６４，７４，８４，９４の積層構造
をなしている。保護ダイオードのｎ層側電極、す
なわち金属電極６４，７４，８４，９４が太陽電
池のｐ層側電極、すなわち透明電極２２，３２，
４２，５２に接続されている。また太陽電池のｎ
層電極、すなわち金属電極２４，３４，４４，５
４が保護ダイオードのｐ形電極、すなわち透明電
極６２，７２，８２，９２と接続されている。こ
うして保護ダイオード６１，７１，８１，９１は
太陽電池ユニツト２０，３０，４０，５０と逆並
列接続されたことになる。 Embodiments of the present invention will be described below with reference to the drawings. In FIGS. 2a to 2c, a is a plan view, b is a sectional view taken along line A-A' of a, and c is a sectional view taken along line B-B' of a. Multiple solar cell units 20, 30, 4
0 and 50 are transparent electrodes 2 having the same structure as the cell 10 in FIG.
2, 32, 42, 52, a-Si layer 23, 33, 4
3, 53 and metal electrodes 24, 34, 44, 54. Since the transparent electrodes 32, 42, 52 are electrically connected to the metal electrodes 24, 34, 44 of adjacent units, each solar cell unit 20, 30, 40, 50 is connected in series. . Protection diodes 61, 71, 81, placed equidistantly between the solar cell units,
91 are transparent electrodes 62, 7 similar to the solar cell unit.
2, 82, 92, a-Si layer 63, 73, 83, 9
3. It has a laminated structure of metal electrodes 64, 74, 84, and 94. The n-layer side electrode of the protection diode, that is, the metal electrodes 64, 74, 84, 94, is the p-layer side electrode of the solar cell, that is, the transparent electrode 22, 32,
42 and 52. Also, the n of solar cells
layer electrodes, i.e. metal electrodes 24, 34, 44, 5
4 is connected to the p-type electrode of the protection diode, that is, the transparent electrode 62, 72, 82, 92. In this way, the protection diodes 61, 71, 81, 91 are connected in antiparallel to the solar cell units 20, 30, 40, 50.
次にこの実施例において電流径路を考えてみ
る。通常の太陽電池の発電状況において、各ユニ
ツトで発生した光起電力は、電圧が加算され、電
流は各ユニツトに同電流が流れる形でとり出され
る。すなわち、電流は５４→５３→５２→４４→
４３→４２……２４→２３→２２に流れる。今、
ユニツト４０がしやへいされ、光起電力が発生し
なかつたとしてみると、電流の流れがこのユニツ
トにおいてたちきられ太陽電池全体として出力が
とり出せなくなる。これを防ぐために保護ダイオ
ードを設けるのであがこの場合の電池経路は、第
５図のダイオード８１の部分の拡大斜視図に示す
ように、５２→４４→８２→８３→８４→４２→
３４となり、光起電力を発生するユニツトがつな
がる。金属電極の抵抗は小さいのでこれによつて
生ずる電圧低下は、問題にならないが、透明電極
は太陽電池への光入射面の反射率を抑えねばなら
ない関係上厚さはある値以下に抑える必要があ
り、また比抵抗も高いので大電流が透明電極を流
れると大きい電圧低下が発生する。保護ダイオー
ドに関しては、電流の流れる方向に対して巾の広
いダイオード構造とし、また透明電極部の電流の
流れ方向の長さを小さくすることにより、この部
分における電圧低下、又は透明電極部における電
力損失を小さく抑えることが可能である。太陽電
池部の透明電極の部分、例えば電極４２について
は太陽電池の有効面積部分を大きくするために、
この長さ（第２図のｂの符号４２の紙面における
左右方向）をできるだけ大きくとる必要がある。
しかし、大きくしすぎると透明電極部における電
力損失が太陽電池の形状因子、短絡電流に大きい
影響を及ぼすのである値以下に制限する必要があ
る。この値が約1.5cmである。このように太陽電
池ユニツトの透明電極の電流の流れる方向の一辺
の長さを1.5cm以下にすると太陽電池ユニツトの
面積を大きくするには、他辺の長さを前記一辺よ
り長く、すなわち、ユニツト形状を長方形にしな
ければならない。ところが、この場合太陽電池ユ
ニツトの面積が大きくなるにつれて、一つの太陽
電池ユニツトに対して一つの保護ダイオードでは
十分に保護の役割を果すことができなくなるとい
う問題が生じた。例えば巾20cmの太陽電池ユニツ
トを作成し、これに１つの保護ダイオードを太陽
電池の一端に組みこんだとき保護ダイオードの効
果が上がらず保護ダイオードの反対側の端部にお
いて太陽電池の破壊がおこりやすいことがあつ
た。これは以上考察したように保護ダイオードの
効果が太陽電池ユニツトに及んでいないためであ
ると考えられる。 Next, consider the current path in this embodiment. In a normal solar cell power generation situation, the voltages of the photovoltaic forces generated in each unit are added together, and the current is taken out in the form that the same current flows through each unit. In other words, the current is 54→53→52→44→
Flows from 43 to 42...24 to 23 to 22. now,
Assuming that the unit 40 is shut down and no photovoltaic force is generated, the current flow is cut off in this unit, and the solar cell as a whole becomes unable to produce any output. To prevent this, a protection diode is provided, but the battery path in this case is 52→44→82→83→84→42→ as shown in the enlarged perspective view of the diode 81 in FIG.
34, and the unit that generates photovoltaic power is connected. Since the resistance of the metal electrode is small, the voltage drop caused by this is not a problem, but the thickness of the transparent electrode must be kept below a certain value because the reflectance of the light incident surface to the solar cell must be suppressed. Also, since the specific resistance is high, a large voltage drop occurs when a large current flows through the transparent electrode. Regarding the protection diode, by using a diode structure with a wide width in the current flow direction and by reducing the length of the transparent electrode part in the current flow direction, voltage drop in this part or power loss in the transparent electrode part can be reduced. It is possible to keep it small. Regarding the transparent electrode part of the solar cell part, for example, the electrode 42, in order to increase the effective area of the solar cell,
It is necessary to make this length (in the left-right direction in the plane of the paper indicated by reference numeral 42 in b of FIG. 2) as large as possible.
However, if it is too large, the power loss in the transparent electrode section will have a large effect on the form factor and short circuit current of the solar cell, so it is necessary to limit it to a certain value or less. This value is approximately 1.5cm. In this way, if the length of one side of the transparent electrode of the solar cell unit in the current flow direction is set to 1.5 cm or less, in order to increase the area of the solar cell unit, the length of the other side must be longer than the one side, that is, the unit The shape must be rectangular. However, in this case, as the area of the solar cell unit increases, a problem arises in that one protection diode cannot sufficiently protect one solar cell unit. For example, if you create a solar cell unit with a width of 20cm and incorporate one protection diode into one end of the solar cell, the effect of the protection diode will not increase and the solar cell will likely be destroyed at the end opposite to the protection diode. Something happened. This is thought to be because, as discussed above, the effect of the protection diode does not extend to the solar cell unit.
そこで、現実的な太陽電池についてどの程度ま
で一つのダイオードで太陽電池を保護できるか考
えてみる。第２図ａに示した一つのユニツト内の
二つの保護ダイオード、例えば６１，６５間の距
離をｙとする。ダイオード６１，６５の中点から
みたときの保護ダイオード６１までの透明電極２
２の抵抗を見積ると次のようになる。 Therefore, let's consider to what extent a single diode can protect a practical solar cell. Let y be the distance between two protection diodes, for example 61 and 65, in one unit shown in FIG. 2a. Transparent electrode 2 up to the protection diode 61 when viewed from the midpoint of the diodes 61 and 65
Estimating the resistance of 2 is as follows.
（ｙ／２−ａ）・Ｒ
□×１／ａ＋Ｒ
□・４／π ａ−a0／ａ＋a0
＝Ｒ
□（ｙ／2a−１＋４／π・ａ−a0／ａ＋a0）
たゞし、ａは第２図ｂに示すように太陽電池の
透明電極の幅、a0は第２図ａに示すように太陽電
池の透明電極のダイオード部のための凹部の深
さ、Ｒ
□は透明電極のシート抵抗である。流れ込
む電流は太陽電池の電流密度をＪとするとＪ・
ｙ／２・ａ、従つて発生する電圧ドツロプ△Ｖは、
△Ｖ＝１／２Ｊｙ／２ａ（ｙ／2a−１＋４／π ａ／ａ
＋a0）Ｒ
□
となり、ａ＝1.5cm、Ｊ＝10mA／cm2、a0＝５mm、
Ｒ
□＝10Ω／□とすると
△Ｖ＝0.15／４ｙ（ｙ／３−0.363）
となる。第３図に示すように、この電圧ドロツプ
△Ｖは抵抗１２であらわされ、保護ダイオード１
１に電流が流れる場合の順ドロツプVFとして、
太陽電池１０の逆耐圧VRの関係は次のようでな
ければならない。(y/2-a)・R □×1/a+R □・4/π a−a 0 /a+a 0 =R □(y/2a−1+4/π・a−a 0 /a+a 0 ) a is the width of the transparent electrode of the solar cell as shown in Figure 2b, a0 is the depth of the recess for the diode part of the transparent electrode of the solar cell as shown in Figure 2a, and R □ is the width of the transparent electrode of the solar cell. is the sheet resistance of The current flowing into the solar cell is J, where the current density of the solar cell is J.
y/2・a, so the voltage drop △V that occurs is: △V=1/2Jy/2a(y/2a-1+4/π a/a
+a 0 )R □, a = 1.5cm, J = 10mA/cm 2 , a 0 = 5mm,
If R□=10Ω/□, then △V=0.15/4y(y/3-0.363). As shown in FIG. 3, this voltage drop ΔV is represented by a resistor 12 and a protection diode 1
As the forward drop V F when current flows through 1,
The relationship between the reverse breakdown voltage V R of the solar cell 10 must be as follows.
VR＞△Ｖ＋VF
アモルフアスダイオードの順方向電流Ｉは、１
cm2当り
Ｉ＝10-12（eev/nkT−１） (A)
但し、ｅは素電荷、ｎは定数で通常1.5、ｋは
オルツマン定数、Ｔは絶対温度である。これより
電流10mAおよび1A流す場合の順方向ドロツプ
は0.89V、1.1Vとなり、順方向ドロツプは約1Vで
電流によりほとんど変わらない。従つて次の関係
式が成立する。 V R >△V+V F The forward current I of the amorphous diode is 1
per cm 2 I=10 -12 (e ev/nkT -1) (A) However, e is the elementary charge, n is a constant and is usually 1.5, k is the Ortzmann constant, and T is the absolute temperature. From this, when currents of 10mA and 1A flow, the forward drop is 0.89V and 1.1V, and the forward drop is about 1V and hardly changes depending on the current. Therefore, the following relational expression holds true.
３＞0.15／４ｙ（ｙ／３−0.363）＋１
ここで太陽電池の逆耐圧を太陽電池が大きくな
つて弱い部分が存在するとして3Vと見積つた。
こうしてｙの値が
ｙ＜9.2cm
という制限を受けることになる。このことに第２
図に示すように、例えば保護ダイオード６１と６
５を9.2cmより小さい距離で分散して１つの太陽
電池内に配置する必要を示している。太陽電池が
大きくなり、不完全部分を含み逆耐圧が小さい部
分が多くなると、保護ダイオード間の距離ｙはさ
らに小さくする必要がある。 3>0.15/4y(y/3-0.363)+1 Here, the reverse breakdown voltage of the solar cell was estimated to be 3V, assuming that the solar cell becomes larger and has a weaker part.
In this way, the value of y is subject to the restriction that y<9.2cm. Second to this
As shown in the figure, for example, protection diodes 61 and 6
This shows that it is necessary to disperse the solar cells with a distance of less than 9.2 cm and arrange them within one solar cell. As solar cells become larger and include more parts with imperfections and low reverse breakdown voltages, the distance y between the protection diodes needs to be further reduced.
以上の結果、第４図の模型的に示すように20cm
×30cm太陽電池セルにおいて、一つの太陽電池ユ
ニツト２０などに４個の保護ダイオード１１を互
に５cmの距離を離して第２図に示した方法で作成
した。この結果セル特性の劣化が非常に減少し
た。 As a result of the above, as shown schematically in Figure 4, 20cm
In a x30 cm solar cell, four protection diodes 11 were placed in one solar cell unit 20, etc., at a distance of 5 cm from each other, using the method shown in FIG. As a result, deterioration of cell characteristics was greatly reduced.
以上述べたように、本発明は直列接続される太
陽電池ユニツトに逆バイアスが加わることによる
劣化を防ぐために逆並列接続される保護ダイオー
ドを共通透明絶縁基板上に太陽電池ユニツトと同
一構造でかつ太陽電池の逆耐圧よりきまる距離以
下の距離を置いて分散配置するもので、これによ
り信頼性の高い薄膜太陽電池が構成され、得られ
る効果はすこぶる高い。 As described above, in order to prevent deterioration due to application of reverse bias to solar cell units connected in series, the present invention provides protection diodes connected in anti-parallel on a common transparent insulating substrate with the same structure as the solar cell units and solar cell units. They are dispersed at a distance determined by the reverse breakdown voltage of the battery, thereby creating a highly reliable thin-film solar cell, and the resulting effect is extremely high.
第１図は薄膜太陽電池に保護ダイオードを接続
した従来形の構造を示す斜視図、第２図ａ〜ｃは
本発明の一実施例の太陽電池と同一構造の保護ダ
イオードをつくりこんだ薄膜太陽電池を示し、ａ
は平面図、ｂはａのＡ−A′線断面図、ｃはＢ−
B′線断面図、第３図は光の遮蔽等で太陽電池の
光起電力が発生しないため保護ダイオードに電流
が流れる場合の等価回路図、第４図は本発明の一
実施例の保護ダイオードの分散配置図、第５図は
ダイオード８１の部分の拡大斜視図である。
１…透明絶縁基板、１０，２０，３０，４０，
５０…太陽電池ユニツト、１１，６１，６５，７
１，８１，９１…保護ダイオード。
Fig. 1 is a perspective view showing a conventional structure in which a protection diode is connected to a thin film solar cell, and Figs. Indicates a battery, a
is a plan view, b is a sectional view taken along line A-A' of a, and c is B-
3 is an equivalent circuit diagram when current flows through the protection diode because the photovoltaic force of the solar cell is not generated due to light shielding, etc., and FIG. 4 is a protection diode according to an embodiment of the present invention. FIG. 5 is an enlarged perspective view of the diode 81 portion. 1...Transparent insulating substrate, 10, 20, 30, 40,
50... Solar cell unit, 11, 61, 65, 7
1, 81, 91...protection diode.
Claims (1)
と金属電極とがこの順に積層されてなる太陽電池
ユニツトおよび同じ層構成のダイオードの複数個
がそれぞれ共通の前記基板上に形成され、前記金
属電極と透明電極のそれぞれの延長部の接続によ
り隣接太陽電池ユニツト相互間の直列接続および
各太陽電池ユニツトとこのユニツト内のダイオー
ドとの逆並列接続がそれぞれ構成されてなる太陽
電池において、各太陽電池ユニツトには、逆バイ
アスが加わらないようにそれぞれ複数のダイオー
ドが配置されると共に各ユニツト内におけるダイ
オードの間隔を、その順方向電圧値とその間隔の
中点からダイオードまでの透明電極の電圧ドロツ
プ値との和が太陽電池ユニツトの逆耐圧値より小
さくなるようにしたことを特徴とする直列接続型
薄膜太陽電池。1 A solar cell unit in which a transparent electrode, an amorphous semiconductor layer, and a metal electrode are laminated in this order on a transparent insulating substrate, and a plurality of diodes having the same layer configuration are formed on the common substrate, and the metal In a solar cell in which a series connection between adjacent solar cell units and an anti-parallel connection between each solar cell unit and a diode within this unit are formed by connecting the respective extensions of the electrode and the transparent electrode, each solar cell A plurality of diodes are arranged in each unit so that no reverse bias is applied, and the spacing between the diodes in each unit is determined by the forward voltage value and the voltage drop value of the transparent electrode from the midpoint of the spacing to the diode. 1. A series-connected thin film solar cell characterized in that the sum of the reverse breakdown voltage of the solar cell unit is smaller than the reverse breakdown voltage value of the solar cell unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58004616A JPS59129478A (en) | 1983-01-14 | 1983-01-14 | Series connected type thin-film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58004616A JPS59129478A (en) | 1983-01-14 | 1983-01-14 | Series connected type thin-film solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59129478A JPS59129478A (en) | 1984-07-25 |
| JPH0470790B2 true JPH0470790B2 (en) | 1992-11-11 |
Family
ID=11588986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58004616A Granted JPS59129478A (en) | 1983-01-14 | 1983-01-14 | Series connected type thin-film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59129478A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4201241B2 (en) * | 2001-05-17 | 2008-12-24 | 株式会社カネカ | Method for manufacturing integrated thin film photoelectric conversion module |
| DE102018222591A1 (en) * | 2018-12-20 | 2020-06-25 | Forschungszentrum Jülich GmbH | Circuit arrangement for power generation with series-connected solar cells with bypass diodes |
-
1983
- 1983-01-14 JP JP58004616A patent/JPS59129478A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59129478A (en) | 1984-07-25 |
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