JPH0471344B2 - - Google Patents
Info
- Publication number
- JPH0471344B2 JPH0471344B2 JP58201196A JP20119683A JPH0471344B2 JP H0471344 B2 JPH0471344 B2 JP H0471344B2 JP 58201196 A JP58201196 A JP 58201196A JP 20119683 A JP20119683 A JP 20119683A JP H0471344 B2 JPH0471344 B2 JP H0471344B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- silicon layer
- porous silicon
- layer
- cantilever
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/50—Devices controlled by mechanical forces, e.g. pressure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
Description
【発明の詳細な説明】
本発明は半導体加速度センサの製造方法に係る
もので、特にそのカンチレバー部分の製造方法に
特徴を有するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor acceleration sensor, and is particularly characterized by a method of manufacturing a cantilever portion thereof.
半導体加速度センサは、半導体表面に形成され
た拡散抵抗の抵抗値の変化によつて半導体に加わ
る加速度を検出するものである。加速度によつて
カンチレバー部分が曲がると表面の拡散抵抗に張
力ストレスが加わつて電子易動度が増加して抵抗
が下がるか、逆に圧縮ストレスが加わつて電子易
動度が減少して抵抗が上がるかして抵抗値が変化
する。したがつて、Ｎ型の拡散抵抗をカンチレバ
ー部分に形成することが必要となる。 A semiconductor acceleration sensor detects acceleration applied to a semiconductor based on a change in the resistance value of a diffused resistor formed on the surface of the semiconductor. When the cantilever part bends due to acceleration, tensile stress is added to the surface diffusion resistance, increasing electron mobility and decreasing resistance, or conversely, compressive stress is added, decreasing electron mobility and increasing resistance. As a result, the resistance value changes. Therefore, it is necessary to form an N-type diffused resistor in the cantilever portion.
また、カンチレバー部分が加速度によつて変位
を生じるために、それに接する部分に空洞を設け
る必要がある。そのために、半導体基板をエツチ
ングして空洞を形成することが一般に行われてい
るが、異方性エツチングによるために使用する単
結晶シリコン基板の結晶面が制約されたり、エツ
チングの時間が長くなるといつた問題がある。本
発明は、上記のような問題を解決して、カンチレ
バー部分の空洞を短時間で形成できる半導体加速
度センサの製造方法を提供することを目的とす
る。 Furthermore, since the cantilever portion is displaced by acceleration, it is necessary to provide a cavity in the portion in contact with the cantilever portion. For this purpose, it is common practice to form a cavity by etching the semiconductor substrate, but due to anisotropic etching, the crystal plane of the single crystal silicon substrate used is restricted, and the etching time becomes long. There is a problem. SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a semiconductor acceleration sensor that can solve the above problems and form a cavity in a cantilever portion in a short time.
また、使用する半導体基板も制約されず、信頼
性の高い半導体加速度センサを得ることを目的と
する。 Furthermore, the present invention aims to obtain a highly reliable semiconductor acceleration sensor without any restrictions on the semiconductor substrate used.
本発明による半導体加速度センサの製造方法に
おいては、多孔質シリコンの酸化、エツチングに
よつてカンチレバー部分の空洞を形成することに
よつて上記の目的を達成する。すなわち、単結晶
シリコンを陽極化成によつて多孔質化させ、この
多孔質シリコンが酸化し易いことを利用して短時
間で酸化し、この部分を除去することによつて空
洞を形成するものである。また、カンチレバー部
分は単結晶シリコンのエピタキシアル層によつて
形成できるようにしたものである。 In the method for manufacturing a semiconductor acceleration sensor according to the present invention, the above object is achieved by forming a cavity in the cantilever portion by oxidizing and etching porous silicon. In other words, single crystal silicon is made porous by anodization, and by taking advantage of the fact that this porous silicon is easily oxidized, it is oxidized in a short period of time and this portion is removed to form a cavity. be. Further, the cantilever portion can be formed from an epitaxial layer of single crystal silicon.
以下、本発明の実施例につき、図面を参照して
説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は、本発明の実施例を示す正面断面図
で、工程順にＡ−Ｆに分けて示したものである。 FIG. 1 is a front sectional view showing an embodiment of the present invention, divided into steps A-F in the order of steps.
Ｐ型の単結晶シリコン基板１０の表面の所定の
部分に窒化シリコン膜１１を形成し、フツ化水素
（HF）20〜50％溶液中で陽極化成する。窒化シ
リコン膜１１で覆われない単結晶シリコン基板１
０の表面から内部に向つて多孔質シリコン層１２
が形成される(A)。 A silicon nitride film 11 is formed on a predetermined portion of the surface of a P-type single crystal silicon substrate 10, and anodized in a 20-50% hydrogen fluoride (HF) solution. Single crystal silicon substrate 1 not covered with silicon nitride film 11
porous silicon layer 12 from the surface of
is formed (A).
窒化シリコン膜１１を除去した後、単結晶シリ
コン基板１０の表面にＰ型単結晶シリコンをエピ
タキシヤル成長させる。このＰ型シリコン層１３
はカンチレバー部分となるもので、0.5〜3μmの
厚みに形成する(B)。多孔質シリコン層１２も単結
晶シリコンであるので、エピタキシアル成長させ
たＰ型シリコン層１３も単結晶シリコンとなる。 After removing the silicon nitride film 11, P-type single crystal silicon is epitaxially grown on the surface of the single crystal silicon substrate 10. This P-type silicon layer 13
is the cantilever part and should be formed to a thickness of 0.5 to 3 μm (B). Since the porous silicon layer 12 is also made of single crystal silicon, the epitaxially grown P-type silicon layer 13 is also made of single crystal silicon.
なお、この工程でエピタキシアル成長の温度に
は注意を払わなければならない。酸化し易くなつ
ている（活性化している）多孔質シリコンの性質
を失わせないように、950℃以下の温度とする必
要がある。 Note that in this step, attention must be paid to the temperature of epitaxial growth. The temperature needs to be 950°C or lower so as not to lose the properties of porous silicon, which is easily oxidized (activated).
エピタキシアル成長によつて形成されたＰ型シ
リコン層１３の一部をエツチングして多孔質シリ
コン１２の一部を露出させる(C)。多孔質シリコン
１２の上のＰ型シリコン層１３のうちカンチレバ
ーとして残る部分以外をエツチングするものであ
る。 A portion of the P-type silicon layer 13 formed by epitaxial growth is etched to expose a portion of the porous silicon 12 (C). The portion of the P-type silicon layer 13 on the porous silicon 12 other than the portion remaining as a cantilever is etched.
次に、高圧酸化炉で酸化する。Ｐ型シリコン層
１３の表面と多孔質シリコン層１２は酸化されて
二酸化シリコン１４となる(D)。 Next, it is oxidized in a high pressure oxidation furnace. The surface of the P-type silicon layer 13 and the porous silicon layer 12 are oxidized to become silicon dioxide 14 (D).
Ｐ型シリコン層１３の表面の二酸化シリコン膜
を除去し、Ｐ型シリコン層１３の表面にＮ型の不
純物を拡散して拡散抵抗領域を形成する(E)。この
Ｎ型拡散抵抗１５は、カンチレバーとなる部分の
表面に所定のパターンで形成する。 The silicon dioxide film on the surface of the P-type silicon layer 13 is removed, and N-type impurities are diffused into the surface of the P-type silicon layer 13 to form a diffused resistance region (E). This N-type diffused resistor 15 is formed in a predetermined pattern on the surface of the portion that will become the cantilever.
次に、多孔質シリコンが酸化されて形成された
二酸化シリコンをフツ化水素溶液によつてエツチ
ングして除去し、カンチレバー部分の下に空洞を
形成する。また、拡散抵抗１５にアルミニウムの
電極１７を接続する(F)。 Next, silicon dioxide formed by oxidation of the porous silicon is removed by etching with a hydrogen fluoride solution to form a cavity under the cantilever portion. Further, an aluminum electrode 17 is connected to the diffused resistor 15 (F).
以上のようにして、単結晶シリコンのカンチレ
バーに拡散抵抗領域が形成され、かつ、カンチレ
バー下部に空洞を有する半導体加速度センサが形
成される。これを斜視図に示したのが第２図であ
る。 In the above manner, a semiconductor acceleration sensor is formed in which a diffused resistance region is formed in a single-crystal silicon cantilever and a cavity is formed at the bottom of the cantilever. FIG. 2 shows this in perspective view.
なお、カンチレバーは所望の形状に形成できる
エツチングのパターンによつて、第３図のように
カンチレバーの根元の部分を細くして感度を上げ
ることも可能となる。あるいは、同じく感度を上
げるために、第４図のように、カンチレバーの先
端に金属１８を付加するようにしても良い。 Note that by etching the cantilever into a desired shape, it is possible to increase the sensitivity by making the base portion of the cantilever thinner, as shown in FIG. Alternatively, in order to similarly increase the sensitivity, a metal 18 may be added to the tip of the cantilever, as shown in FIG.
カンチレバーに加速度が加わると、表面のＮ型
の拡散抵抗に張力ストレスが加わり、電子易動度
が増加して抵抗が下がる。SiO2−Siの界面での
張力ストレスによる電子易動度の増加は20〜30％
程度である。 When acceleration is applied to the cantilever, tensile stress is applied to the N-type diffusion resistance on the surface, increasing electron mobility and lowering the resistance. The increase in electron mobility due to tensile stress at the SiO 2 −Si interface is 20–30%
That's about it.
本発明によれば、カンチレバー部分の空洞の形
成が短時間でできる。したがつて、半導体加速度
センサの製造の工数を大幅に低減できることにな
る。また、使用する半導体基板を任意に選択でき
るので、他の素子と同一基板内に形成したりする
ことも容易となる。 According to the present invention, the cavity of the cantilever portion can be formed in a short time. Therefore, the number of man-hours for manufacturing the semiconductor acceleration sensor can be significantly reduced. Furthermore, since the semiconductor substrate to be used can be arbitrarily selected, it becomes easy to form other elements on the same substrate.
更に、カンチレバー部分を単結晶シリコンで形
成することになるので、機械的な強度の面で有利
であり、弾性限界が高く、機械的疲労破壊がない
など、信頼性の高い半導体加速度センサが得られ
る利点もある。 Furthermore, since the cantilever part is made of single-crystal silicon, it is advantageous in terms of mechanical strength, has a high elastic limit, and is free from mechanical fatigue failure, making it possible to obtain a highly reliable semiconductor acceleration sensor. There are also advantages.
第１図は本発明の実施例を示す正面断面図、第
２図は本発明により製造された半導体加速度セン
サの一例の斜視図、第３図は他の例の平面図、第
４図は他の例の正面断面図を示す。
１２……多孔質シリコン層、１３……Ｐ型（エ
ピタキシアル）シリコン層、１４……二酸化シリ
コン。
FIG. 1 is a front sectional view showing an embodiment of the present invention, FIG. 2 is a perspective view of an example of a semiconductor acceleration sensor manufactured according to the present invention, FIG. 3 is a plan view of another example, and FIG. 4 is another example. A front sectional view of an example is shown. 12...Porous silicon layer, 13...P-type (epitaxial) silicon layer, 14...Silicon dioxide.
Claims (1)
溶液中で陽極化成処理して多孔質シリコン層を所
定の深さで形成し、該表面にＰ型の単結晶シリコ
ン層をエピタキシアル成長させ、エツチングによ
り該Ｐ型のエピタキシアル層の一部を除去して該
多孔質シリコン層の一部を露出させ、該多孔質シ
リコン層を酸化し、該Ｐ型のエピタキシアル層の
該多孔質シリコン層の上部にＮ型の拡散抵抗領域
を形成し、該酸化された多孔質シリコン層をフツ
化水素溶液によつてエツチングして除去してＰ型
のエピタキシアル層の下部に空洞を形成し、Ｎ型
の拡散抵抗領域に電極を形成することを特徴とす
る半導体加速度センサの製造方法。1 A part of a P-type single-crystal silicon substrate is anodized in a hydrogen fluoride solution to form a porous silicon layer at a predetermined depth, and a P-type single-crystal silicon layer is epitaxially grown on the surface. , removing a portion of the P-type epitaxial layer by etching to expose a portion of the porous silicon layer, oxidizing the porous silicon layer, and removing the porous silicon of the P-type epitaxial layer. forming an N-type diffused resistance region on top of the layer and etching away the oxidized porous silicon layer with a hydrogen fluoride solution to form a cavity below the P-type epitaxial layer; A method of manufacturing a semiconductor acceleration sensor, comprising forming an electrode in an N-type diffused resistance region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58201196A JPS6092671A (en) | 1983-10-27 | 1983-10-27 | Manufacture of semiconductor accelerating senser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58201196A JPS6092671A (en) | 1983-10-27 | 1983-10-27 | Manufacture of semiconductor accelerating senser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6092671A JPS6092671A (en) | 1985-05-24 |
| JPH0471344B2 true JPH0471344B2 (en) | 1992-11-13 |
Family
ID=16436933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58201196A Granted JPS6092671A (en) | 1983-10-27 | 1983-10-27 | Manufacture of semiconductor accelerating senser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6092671A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0821722B2 (en) * | 1985-10-08 | 1996-03-04 | 日本電装株式会社 | Semiconductor vibration / acceleration detector |
| JP2701845B2 (en) * | 1987-08-21 | 1998-01-21 | 株式会社東海理化電機製作所 | Manufacturing method of silicon thin film |
| JP2765610B2 (en) * | 1993-09-02 | 1998-06-18 | 株式会社デンソー | Semiconductor vibration / acceleration detector |
| KR970010663B1 (en) * | 1993-12-24 | 1997-06-30 | 만도기계 주식회사 | Bridge type silicon acceleration sensor with 8 beams and its manufacturing method |
| CN110161282B (en) * | 2019-05-22 | 2021-03-30 | 龙微科技无锡有限公司 | Fabrication method of piezoresistive acceleration sensor based on SON structure |
| JP7476149B2 (en) | 2021-09-14 | 2024-04-30 | 株式会社東芝 | Cantilever Array |
-
1983
- 1983-10-27 JP JP58201196A patent/JPS6092671A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6092671A (en) | 1985-05-24 |
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