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JPH0471354B2 - - Google Patents
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JPH0471354B2 - - Google Patents

Info

Publication number
JPH0471354B2
JPH0471354B2 JP980684A JP980684A JPH0471354B2 JP H0471354 B2 JPH0471354 B2 JP H0471354B2 JP 980684 A JP980684 A JP 980684A JP 980684 A JP980684 A JP 980684A JP H0471354 B2 JPH0471354 B2 JP H0471354B2
Authority
JP
Japan
Prior art keywords
transistor
voltage
current control
cathode
gas laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP980684A
Other languages
Japanese (ja)
Other versions
JPS60154584A (en
Inventor
Setsuo Terada
Shuzo Yoshizumi
Hitoshi Motomya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59009806A priority Critical patent/JPS60154584A/en
Publication of JPS60154584A publication Critical patent/JPS60154584A/en
Publication of JPH0471354B2 publication Critical patent/JPH0471354B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/097Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 本発明は加工用、医療用としてのガスレーザ装
置に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a gas laser device for processing and medical use.

従来例の構成とその問題点 従来の定電流回路を有するガスレーザ発振装置
を第1図に示す。図示のように、高圧直流電源1
の出力端をレーザ管2のアノード3と抵抗4を通
じてカソード6に、かつ抵抗5を通してアースに
接続するとともに定電流制御回路7に接続してい
た。定電流制御回路7は高耐圧真空管8と電流調
整用トランジスタ9、及び放電電流制御用信号回
路10より構成される。放電状態の定電流を得る
ためのグリツド電位の調整として、グリツドには
一定電位を常に有するようにして真空管カソード
とトランジスターコレクタを接続し、トランジス
タ、コレクタの電位をベース信号により変化させ
ることにより得ていた。ところが放電を確実にさ
せためには電源電圧を放電開始電圧よりも可成り
高くする必要があるし、一度放電が開始されると
レーザ管には一定電流時の放電維持電圧に保たれ
るため、電源電圧と放電維持電圧の全電圧は高耐
圧真空管のアノードにかかり、アノード電圧を高
めるためにはグリツド電位の負電圧を高く、すな
わちトランジスタコレクタ電圧を高くする必要が
あり、トランジスタの性能、高圧化にも限界があ
るとともに高圧化に伴い絶縁性能が低下するなど
回路構成上問題点を多く有していた。
Structure of a conventional example and its problems A conventional gas laser oscillation device having a constant current circuit is shown in FIG. As shown, high voltage DC power supply 1
The output end of the laser tube 2 was connected to a cathode 6 through an anode 3 and a resistor 4, and to ground through a resistor 5, as well as to a constant current control circuit 7. The constant current control circuit 7 is composed of a high voltage vacuum tube 8, a current adjustment transistor 9, and a discharge current control signal circuit 10. To adjust the grid potential to obtain a constant current in the discharge state, the vacuum tube cathode and the transistor collector are connected so that the grid always has a constant potential, and the potential of the transistor and collector is changed by the base signal. Ta. However, in order to ensure the discharge, it is necessary to make the power supply voltage considerably higher than the discharge starting voltage, and once the discharge has started, the laser tube is kept at the discharge sustaining voltage at a constant current. The entire voltage of the power supply voltage and discharge sustaining voltage is applied to the anode of the high-voltage vacuum tube, and in order to increase the anode voltage, it is necessary to increase the negative voltage of the grid potential, that is, to increase the transistor collector voltage. However, it also had many problems in terms of circuit configuration, such as a decline in insulation performance as the voltage increased.

発明の目的 本発明は従来の欠点を除去し、高耐圧真空管の
カソード側に接続されたトランジスタの高電圧化
を低下させ、トランジスタの性能を高めるととも
に絶縁性能の低下にともなう回路構成上の問題点
をなくし、信頼性の高いガスレーザ発振装置を得
るにある。
Purpose of the Invention The present invention eliminates the drawbacks of the conventional art, reduces the high voltage of the transistor connected to the cathode side of a high-voltage vacuum tube, improves the performance of the transistor, and causes problems in circuit configuration due to deterioration of insulation performance. The aim is to eliminate this problem and obtain a highly reliable gas laser oscillation device.

発明の構成 本発明のガスレーザ装置は、直流電源の出力端
にガスレーザ管のアノードと抵抗を介してカソー
ドとを接続し、一方高耐圧真空管のグリツドに負
電位のPNPトランジスタのコレクタおよび負電
圧供給電源を接続し、前記高耐圧真空管のカソー
ドに正電位のNPNトランジスタのコレクタを接
続し、前記PNPトランジスタおよびNPNトラン
ジスタのベースに、同時に放電電流制御用信号を
送る放電電流制御用信号回路を接続し、前記
PNPトランジスタおよびNPNトランジスタのエ
ミツタにそれぞれ接続した抵抗を介してアースに
接続して定電流制御回路を構成し、前記ガスレー
ザ管のカソードと前記高耐圧真空管のアノード3
とを接続したことを特徴とする。
Structure of the Invention The gas laser device of the present invention connects the anode and cathode of a gas laser tube to the output end of a DC power supply via a resistor, and connects the collector of a PNP transistor with a negative potential to the grid of a high voltage vacuum tube and the negative voltage supply power supply. , a collector of a positive potential NPN transistor is connected to the cathode of the high voltage vacuum tube, and a discharge current control signal circuit that simultaneously sends a discharge current control signal is connected to the bases of the PNP transistor and the NPN transistor, Said
A constant current control circuit is constructed by connecting the emitters of the PNP transistor and the NPN transistor to ground through resistors connected to each other, and connecting the cathode of the gas laser tube and the anode 3 of the high voltage vacuum tube.
It is characterized by being connected to.

本発明は前記構成により、高耐圧真空管のアノ
ード電圧を高くしても、両トランジスタに電圧分
担させることができ、トランジスタの性能、信頼
性向上及び絶縁性能の上昇など回路構成上の問題
点をなくすことができる。
With the above configuration, the present invention allows both transistors to share the voltage even if the anode voltage of the high-voltage vacuum tube is increased, thereby eliminating problems in circuit configuration such as improving transistor performance, reliability, and insulation performance. be able to.

実施例の説明 第2図に本発明のガスレーザ装置の一実施例を
示す。
DESCRIPTION OF EMBODIMENTS FIG. 2 shows an embodiment of the gas laser device of the present invention.

図において第1図と同一符号は同一部品を示
す。図において、19はNPNトランジスタ、1
7は定電流制御回路、11は高耐圧真空管8のグ
リツドに接続されたPNPトランジスタ、12は
PNPトランジスタ11用負電圧供給電源、を示
す。
In the figure, the same reference numerals as in FIG. 1 indicate the same parts. In the figure, 19 is an NPN transistor, 1
7 is a constant current control circuit, 11 is a PNP transistor connected to the grid of high voltage vacuum tube 8, and 12 is a
A negative voltage supply power supply for the PNP transistor 11 is shown.

本発明においては、電流調整用トランジスタ9
をNPNトランジスタ19とし、高耐圧真空管8
のグリツドGにPNPトランジスタ11のコレク
タを接続し、前記コレクタには負電圧供給電源1
2を接続し、エミツタを抵抗を介してアースす
る。更にNPNトランジスタ19、PNPトランジ
スタ11のベースに同時に放電電流制御用信号を
送るよう放電電流制御用信号回路10を接続す
る。
In the present invention, the current adjustment transistor 9
is an NPN transistor 19, and a high voltage vacuum tube 8
The collector of a PNP transistor 11 is connected to the grid G of
2 and ground the emitter through a resistor. Further, a discharge current control signal circuit 10 is connected to the bases of the NPN transistor 19 and the PNP transistor 11 so as to simultaneously send a discharge current control signal.

本発明は高耐圧真空管8のグリツドGにPNP
トランジスタ11を接続することにより、高耐圧
真空管8のアノード電圧を高くしても、PNPト
ランジスタ11に電圧を分担させることができ
る。
The present invention uses PNP in grid G of high voltage vacuum tube 8.
By connecting the transistor 11, even if the anode voltage of the high voltage vacuum tube 8 is increased, the voltage can be shared by the PNP transistor 11.

したがつて、従来の高耐圧真空管のカソードに
接続された電流調整用トランジスタ9の信頼性を
保持し回路絶縁性能の低下を生ずることなく、放
電開始を確実にするための電源電圧を高くするこ
とが可能となる。特にパルス発振時はON−OFF
を短時間に繰返すため電源電圧を放電開始電圧よ
り可成り高くする必要があるが、本発明の前記構
成によれば前述のように電源電圧を高くできるた
め本発明に基づくガスレーザ装置はレーザ発振器
として信頼性を向上できる。
Therefore, it is necessary to maintain the reliability of the current regulating transistor 9 connected to the cathode of the conventional high-voltage vacuum tube and increase the power supply voltage to ensure the start of discharge without deteriorating the circuit insulation performance. becomes possible. Especially during pulse oscillation, ON-OFF
In order to repeat this in a short time, it is necessary to make the power supply voltage considerably higher than the discharge starting voltage. However, according to the configuration of the present invention, the power supply voltage can be increased as described above, so that the gas laser device based on the present invention can be used as a laser oscillator. Can improve reliability.

発明の効果 本発明によれば、定電流回路内の高耐圧真空管
のアノード電圧を高めることができ、放電を確実
にし、レーザ発振を確実にすることができる、な
どの作用効果を生ずる。
Effects of the Invention According to the present invention, it is possible to increase the anode voltage of a high-voltage vacuum tube in a constant current circuit, ensuring discharge, and ensuring laser oscillation.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の定電流回路を含むガスレーザ装
置、第2図は本発明の定電流回路を含むガスレー
ザ装置の一実施例、を示す。 1:高圧直流電源、2:レーザ管、3:アノー
ド、4,5:抵抗、6:カソード、7:定電流制
御回路、8:高耐圧真空管、9:電流調整用トラ
ンジスタ、10:放電電流制御用信号回路、1
1:PNPトランジスタ、12:負電圧供給電源、
17:定電流制御回路、19:NPNトランジス
タ。
FIG. 1 shows a conventional gas laser device including a constant current circuit, and FIG. 2 shows an embodiment of the gas laser device including the constant current circuit of the present invention. 1: High voltage DC power supply, 2: Laser tube, 3: Anode, 4, 5: Resistor, 6: Cathode, 7: Constant current control circuit, 8: High voltage vacuum tube, 9: Current adjustment transistor, 10: Discharge current control Signal circuit for 1
1: PNP transistor, 12: Negative voltage supply power supply,
17: Constant current control circuit, 19: NPN transistor.

Claims (1)

【特許請求の範囲】[Claims] 1 直流電源の出力端に、ガスレーザ管のアノー
ドと抵抗を介してカソードとを接続し、一方高耐
圧真空管のグリツドに負電位のPNPトランジス
タのコレクタおよび負電圧供給電源を接続し、前
記高耐圧真空管のカソードに正電位のNPNトラ
ンジスタのコレクタを接続し、前記PNPトラン
ジスタおよびNPNトランジスタのベースに、同
時に放電電流制御用信号を送る放電電流制御用信
号回路を接続し、前記PNPトランジスタおよび
NPNトランジスタのエミツタにそれぞれ接続し
た抵抗を介してアースに接続して定電流制御回路
を構成し、前記ガスレーザ管のカソードと前記高
耐圧真空管のアノードとを接続したことを特徴と
するガスレーザ装置。
1 Connect the anode and cathode of the gas laser tube to the output end of the DC power supply via a resistor, and connect the collector of a negative potential PNP transistor and the negative voltage supply power supply to the grid of the high voltage vacuum tube. A collector of a positive potential NPN transistor is connected to the cathode of the transistor, and a discharge current control signal circuit for simultaneously sending a discharge current control signal is connected to the bases of the PNP transistor and the NPN transistor.
A gas laser device characterized in that the emitters of the NPN transistors are connected to ground through resistors respectively connected to constitute a constant current control circuit, and the cathode of the gas laser tube and the anode of the high voltage vacuum tube are connected.
JP59009806A 1984-01-23 1984-01-23 Gas laser device Granted JPS60154584A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59009806A JPS60154584A (en) 1984-01-23 1984-01-23 Gas laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59009806A JPS60154584A (en) 1984-01-23 1984-01-23 Gas laser device

Publications (2)

Publication Number Publication Date
JPS60154584A JPS60154584A (en) 1985-08-14
JPH0471354B2 true JPH0471354B2 (en) 1992-11-13

Family

ID=11730422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59009806A Granted JPS60154584A (en) 1984-01-23 1984-01-23 Gas laser device

Country Status (1)

Country Link
JP (1) JPS60154584A (en)

Also Published As

Publication number Publication date
JPS60154584A (en) 1985-08-14

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