JPH0471876B2 - - Google Patents
Info
- Publication number
- JPH0471876B2 JPH0471876B2 JP62109518A JP10951887A JPH0471876B2 JP H0471876 B2 JPH0471876 B2 JP H0471876B2 JP 62109518 A JP62109518 A JP 62109518A JP 10951887 A JP10951887 A JP 10951887A JP H0471876 B2 JPH0471876 B2 JP H0471876B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- lanthanum
- cuo
- melt
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 64
- 239000013078 crystal Substances 0.000 claims description 54
- 239000000155 melt Substances 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229910052746 lanthanum Inorganic materials 0.000 claims description 8
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 7
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 6
- 239000005751 Copper oxide Substances 0.000 claims description 4
- 229910000431 copper oxide Inorganic materials 0.000 claims description 4
- NZPIUJUFIFZSPW-UHFFFAOYSA-H lanthanum carbonate Chemical compound [La+3].[La+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O NZPIUJUFIFZSPW-UHFFFAOYSA-H 0.000 claims description 4
- 229910017569 La2(CO3)3 Inorganic materials 0.000 claims description 3
- 229960001633 lanthanum carbonate Drugs 0.000 claims description 3
- 239000013081 microcrystal Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 230000001376 precipitating effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000002244 precipitate Substances 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- 239000012071 phase Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 5
- 238000007716 flux method Methods 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 3
- 229910052802 copper Chemical group 0.000 description 2
- 239000010949 copper Chemical group 0.000 description 2
- 239000008710 crystal-8 Substances 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000013076 target substance Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000048 melt cooling Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
- H10N60/855—Ceramic superconductors
- H10N60/857—Ceramic superconductors comprising copper oxide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Description
【発明の詳細な説明】
[産業上の利用分野]
この発明は溶液ひきあげ法による銅酸ランタン
(La2CuO4)単結晶の製造方法に関するものであ
る。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for producing a lanthanum cuprate (La 2 CuO 4 ) single crystal by a solution drawing method.
[従来の技術]
La2CuO4は層状ペロブスカイト型結晶構造をも
つ酸化物で、La原子の位置を少量SrやBa原子で
置き換えると30〜40Kの低温で超伝導を示す。極
低温素子としてこれからの応用が考えられ、その
ためには大型の良質な単結晶が必要となり、その
製造方法の開発が望まれている。[Prior Art] La 2 CuO 4 is an oxide with a layered perovskite crystal structure, and when La atoms are replaced with small amounts of Sr or Ba atoms, it exhibits superconductivity at a low temperature of 30 to 40 K. Future applications of this material are considered as cryogenic devices, which will require large, high-quality single crystals, and the development of a manufacturing method is desired.
従来高温で分解溶解し、通常のひきあげ法で単
結晶を育成できない包晶反応する物質の単結晶を
得る手段としては、通常、目的物質を溶解中に混
合し、その混合溶液を降温することによつてその
混合溶液を過飽和濃度以上の状態にし、目的物質
を融液から単結晶として析出させて得るフラツク
ス法が用いられる。La2CuO4は高温にしてゆくと
1050℃付近で分解溶融するため、単結晶と同一組
成の原料から単結晶を製造することができない。
そのためチヨクラルスキー法が適用できない。そ
のため通常フラツクス法が適用されるが最大で8
×8×2mmのものができているにすぎない。 Conventionally, as a means of obtaining a single crystal of a substance that undergoes a peritectic reaction, which decomposes and dissolves at high temperatures and cannot be grown as a single crystal by ordinary pulling methods, it is usually done by mixing the target substance during dissolution and then cooling the mixed solution. Therefore, a flux method is used in which the mixed solution is made to have a supersaturation concentration or higher and the target substance is precipitated as a single crystal from the melt. When La 2 CuO 4 is heated to high temperature,
Because it decomposes and melts at around 1050°C, it is not possible to produce a single crystal from raw materials with the same composition as a single crystal.
Therefore, the Czyochralski method cannot be applied. Therefore, the flux method is usually applied, but the maximum
It is only 8mm x 2mm.
[発明が解決しようとする問題点]
上述したようにフラツクス法において育成され
る単結晶はあまり大きいとはいえない。しかも結
晶育成に3〜7日と長時間を要する欠点がある。
また結晶育成後に溶液だけを薬品で取り去るか、
徐冷中にるつぼを炉から取り出して固化していな
い溶剤を捨て去るか溶液表面に浮んでいる単結晶
をすくい取るという操作をしなければ単結晶の分
離はできないという問題点があつた。[Problems to be Solved by the Invention] As mentioned above, the single crystal grown by the flux method cannot be said to be very large. Moreover, it has the disadvantage that crystal growth requires a long time of 3 to 7 days.
Also, after crystal growth, only the solution can be removed with chemicals, or
There was a problem in that the single crystal could not be separated unless the crucible was removed from the furnace during slow cooling and the unsolidified solvent was discarded or the single crystal floating on the surface of the solution was scooped out.
[問題点を解決するための手段]
この発明はこのような点に鑑みなされたもの
で、目的物であるLa2CuO4を析出させ得る組成範
囲内に酸化ランタンおよび炭酸ランタンのうちの
少なくとも一種と酸化銅を混合し、その融液を降
温させることにより融液中に析出してくるLa2
CuO4微結晶を融液に接触させた種結晶上に結晶
化させ、これを溶液ひきあげ法によつてLa2CuO4
単結晶を製造する方法であり、フラツクス法とは
異なり種子結晶によつて望みの方向に任意の大き
さの良質な単結晶が短時間に製造できるようにし
たものである。[Means for Solving the Problems] The present invention was made in view of the above points, and includes at least one of lanthanum oxide and lanthanum carbonate within a composition range that can precipitate the target product, La 2 CuO 4 . By mixing copper oxide with copper oxide and cooling the melt, La 2 precipitates in the melt.
CuO 4 microcrystals are crystallized on seed crystals that are in contact with the melt, and then La 2 CuO 4 is crystallized by the solution pulling method.
This is a method for producing single crystals, and unlike the flux method, it uses seed crystals to produce high-quality single crystals of any size in a desired direction in a short time.
[作用]
まず、この発明の原理について述べる。第1図
は示差熱分析と急冷加熱法の結果から作図した
La2O3−Cu0系の相平衡図である。図中、黒点で
示すのは測定結果である。例えばLa2O3が50モル
%、Cu0が50モル%の組成からなるLa2CuO4を加
熱昇温させると1050℃付近で分解溶融してしま
う。そのため融液と同一組成の結晶をひきあげる
チヨクラルスキー法は適用できない。次に液相線
A−B間の組成比、すなわちLa2O3の28.9〜7.1モ
ル%、Cu0の71.1〜92.9モル%の範囲に混合した
原料を約1330〜1040℃において加熱融解したの
ち、融液を徐々に降温させると、融液の組成は液
相線A−Bに沿つて図のCu0側へずれてゆき、
La2CuO4が固相となつて析出してくる。[Operation] First, the principle of this invention will be described. Figure 1 was drawn from the results of differential thermal analysis and rapid cooling/heating method.
It is a phase equilibrium diagram of the La 2 O 3 −Cu0 system. In the figure, the black dots indicate the measurement results. For example, when La 2 CuO 4 having a composition of 50 mol % La 2 O 3 and 50 mol % Cu0 is heated and heated, it decomposes and melts at around 1050°C. Therefore, the Czyochralski method, which pulls up crystals with the same composition as the melt, cannot be applied. Next, after heating and melting the raw materials mixed at a composition ratio between liquidus line A and B, that is, 28.9 to 7.1 mol% of La 2 O 3 and 71.1 to 92.9 mol% of Cu0 at about 1330 to 1040 °C, When the temperature of the melt is gradually lowered, the composition of the melt shifts toward the Cu0 side of the diagram along the liquidus line A-B.
La 2 CuO 4 becomes a solid phase and precipitates.
融液の組成が共晶点BよりCu0側であれば、冷
却時にまずCu0が析出し、融液の組成がA点より
La2O3側であれば、冷却時にまずLa2O3側の結晶
が析出し、いずれもLa2CuO4が析出成長すること
ができない。この相平衡図においてLa原子およ
びCu原子位置に何らかの異種元素を少量混合し
たときに相平衡図が特性的に変わらない場合には
同じLa2CuO4固溶体が固相となつて析出してく
る。この発明ではこれらの結晶を同一のLa2CuO4
またはおなじ層状ペロブスカイト型種子結晶上に
析出してきたLa2CuO4単結晶を育成させてひきあ
げる。 If the composition of the melt is closer to Cu0 than the eutectic point B, Cu0 will precipitate first during cooling, and the composition of the melt will be closer to Cu0 than the eutectic point B.
If it is on the La 2 O 3 side, crystals on the La 2 O 3 side precipitate first during cooling, and La 2 CuO 4 cannot precipitate and grow in either case. In this phase equilibrium diagram, when a small amount of some kind of different element is mixed at the La atom and Cu atom positions, if the phase equilibrium diagram does not change in characteristics, the same La 2 CuO 4 solid solution will precipitate as a solid phase. In this invention, these crystals are made of the same La 2 CuO 4
Alternatively, a La 2 CuO 4 single crystal precipitated on the same layered perovskite seed crystal is grown and pulled up.
[実施例]
以下に実施例によつて本発明を詳細に説明す
る。[Examples] The present invention will be explained in detail below using Examples.
実施例 1
La2CuO4単結晶を溶液引きあげ法によつて製造
した。Example 1 A La 2 CuO 4 single crystal was produced by a solution pulling method.
第2図に使用した単結晶引きあげ装置を示す。
図において、1は水冷シヤフト、2は白金シヤフ
ト、3は保温材、4は高周波加熱コイル、5は熱
電対、6はるつぼ支持物、7は種結晶、8は成長
した単結晶、9は出発原料、10は白金るつぼで
ある。 Figure 2 shows the single crystal pulling device used.
In the figure, 1 is a water-cooled shaft, 2 is a platinum shaft, 3 is a heat insulator, 4 is a high-frequency heating coil, 5 is a thermocouple, 6 is a crucible support, 7 is a seed crystal, 8 is a grown single crystal, and 9 is a starting material. The raw material 10 is a platinum crucible.
La2O3とCu0をモル比にして15:85に混合し、
その混合物200gを、口径50mm、高さ35mmの発熱
体を兼ねた白金るつぼ10に入れ、高周波加熱コ
イル4による誘導加熱方式により約1200℃まで加
熱し溶融させた後、種結晶であるLa2CuO4単結晶
7を融液表面に接触させる。融液を徐々に降温さ
せると、融液中で最も温度の低い種結晶と接触し
ている融液の界面にLa2CuO4微結晶が少しずつ析
出してきて種結晶7上に結晶化し成長する。この
ようにして成長した単結晶8を融液から徐々にひ
きあげる。すなわち、融液を降温しながら、育成
された単結晶のひきあげを同時におこなつてゆく
のである。このときの製造条件としてはLa2CuO4
単結晶8をひきあげ速度は0.3〜1mm/hr、融液
降温速度2〜10℃/hr、結晶回転数10〜30rpm、
雰囲気は空気中である。La2CuO4単結晶成長を完
了するまでに要する時間は大きさ9×7×4mm、
重さ1gの単結晶を得るのに9〜10時間要しただ
けであつた。酸素雰囲気中でも単結晶の成長は可
能である。 Mix La 2 O 3 and Cu0 at a molar ratio of 15:85,
200 g of the mixture was placed in a platinum crucible 10 with a diameter of 50 mm and a height of 35 mm, which also served as a heating element, and heated to approximately 1200°C by induction heating using a high-frequency heating coil 4 to melt it. 4 Bring the single crystal 7 into contact with the surface of the melt. When the temperature of the melt is gradually lowered, La 2 CuO 4 microcrystals gradually precipitate at the interface of the melt that is in contact with the seed crystal with the lowest temperature in the melt, and crystallize and grow on the seed crystal 7. . The single crystal 8 grown in this way is gradually pulled up from the melt. That is, while cooling the melt, the grown single crystal is pulled up at the same time. The manufacturing conditions at this time are La 2 CuO 4
The single crystal 8 is pulled up at a speed of 0.3 to 1 mm/hr, a melt cooling rate of 2 to 10°C/hr, a crystal rotation speed of 10 to 30 rpm,
The atmosphere is in the air. The time required to complete the growth of La 2 CuO 4 single crystal is 9 x 7 x 4 mm,
It took only 9 to 10 hours to obtain a single crystal weighing 1 g. Single crystal growth is possible even in an oxygen atmosphere.
実施例 2
(La0.9Ba0.1)2Cu04なる組成について溶液ひき
あげ法により固溶体単結晶を製造した。90モル%
La2O3+10モル%2BaCO3なる組成の混合物と
Cu0をモル比にして15:85に混合し、実施例1と
同様の操作により同様の経過を経て8×7×3mm
の(La0.9Ba0.1)2Cu04固溶体単結晶を得た。この
発明の製造方法では結晶中のLa原子の位置をBa
で置き換えても第1図のLa2O3−Cu0系の相平衡
図が本質的に変わらないため(La0.9Ba0.1)2Cu04
単結晶が製造できた。Example 2 A solid solution single crystal having the composition (La 0.9 Ba 0.1 ) 2 Cu0 4 was produced by a solution pulling method. 90 mol%
A mixture with the composition La 2 O 3 + 10 mol% 2BaCO 3 and
Cu0 was mixed in a molar ratio of 15:85, and the same procedure as in Example 1 was carried out to create an 8×7×3 mm
A (La 0.9 Ba 0.1 ) 2 Cu0 4 solid solution single crystal was obtained. In the production method of this invention, the position of La atoms in the crystal is
Even if it is replaced by
A single crystal was produced.
同様に結晶中のLa原子およびCu原子の位置に
何らかの異種元素を少量混合したときに相平衡図
が定性的に変わらない場合は上記と全く同一の方
法、条件によつてこの異種元素を混入したLa2
CuO4固溶体単結晶を製造することも可能である。 Similarly, if the phase equilibrium diagram does not qualitatively change when a small amount of a different element is mixed at the position of La and Cu atoms in the crystal, this different element is mixed in using the same method and conditions as above. La 2
It is also possible to produce CuO 4 solid solution single crystals.
La2CuO4単結晶の作製に際し、酸化ランタン
(La2O3)でなく、炭酸ランタン(La2(CO3)3)
を出発物質として用いることもできる。La2
(CO3)3は加熱中に
La2(CO3)3→La2O3+3CO2↑
なる反応を起こし、La2O3に変化する。従つて出
発物質としてLa2(CO3)3とCu0を用いても、結果
として第1図と全く同様の相平衡図が得られ、前
述した各実施例と同様の操作によつてLa2CuO4単
結晶およびLaの一部をBaまたはSrで置換した単
結晶を得ることができた。 When producing a La 2 CuO 4 single crystal, lanthanum carbonate (La 2 (CO 3 ) 3 ) was used instead of lanthanum oxide (La 2 O 3 ).
can also be used as a starting material. La 2
(CO 3 ) 3 undergoes the following reaction during heating: La 2 (CO 3 ) 3 →La 2 O 3 +3CO 2 ↑ and changes to La 2 O 3 . Therefore, even if La 2 (CO 3 ) 3 and Cu0 are used as starting materials, a phase equilibrium diagram completely similar to that shown in FIG. 1 is obtained as a result, and La 2 CuO 4 single crystals and single crystals in which part of La was replaced with Ba or Sr were obtained.
[発明の効果]
以上説明したように、この発明によればLa2
CuO4単結晶を引きあげ法によつて製造すること
ができる。また、BaおよびSrを少量混合した単
結晶を作製することができる。このように本発明
によつて30〜40Kで超伝導を示す酸化物超伝導単
結晶も製造することが可能となつた。[Effect of the invention] As explained above, according to this invention, La 2
CuO 4 single crystals can be produced by a pulling method. Furthermore, a single crystal containing a small amount of Ba and Sr can be produced. As described above, the present invention has made it possible to produce an oxide superconducting single crystal exhibiting superconductivity at 30 to 40K.
第1図はこの発明の原理を説明するためのLa2
O3−Cu0系の相平衡図、第2図はこの発明の一実
施例を説明するためのLa2CuO4単結晶製造装置の
構成図である。
1……水冷シヤフト、2……白金シヤフト、3
……保温材、4……高周波加熱コイル、5……熱
電対、6……るつぼ支持物、7……La2CuO4種結
晶、8……La2CuO4単結晶、9……出発原料、1
0……白金るつぼ。
Figure 1 is La 2 for explaining the principle of this invention.
A phase equilibrium diagram of the O 3 -Cu0 system, FIG. 2 is a block diagram of a La 2 CuO 4 single crystal manufacturing apparatus for explaining an embodiment of the present invention. 1...Water cooling shaft, 2...Platinum shaft, 3
... Heat insulation material, 4 ... High frequency heating coil, 5 ... Thermocouple, 6 ... Crucible support, 7 ... La 2 CuO 4 seed crystal, 8 ... La 2 CuO 4 single crystal, 9 ... Starting material ,1
0...Platinum crucible.
Claims (1)
なくとも一種と酸化銅を混合して加熱融解したの
ち、融液を降温させ、一般式La2CuO4で表わされ
る微結晶を種結晶上に析出、成長させることを特
徴とする銅酸ランタン単結晶の製造方法。 2 前記酸化ランタンおよび炭酸ランタンのうち
の少なくとも一種と前記酸化銅の混合比が28.9〜
7.1モル%対71.1〜92.9モル%であることを特徴と
する特許請求の範囲第1項記載の銅酸ランタン単
結晶の製造方法。 3 前記銅酸ランタンが少量の異種元素を含むこ
とを特徴とする特許請求の範囲第1項記載の銅酸
ランタン単結晶の製造方法。[Claims] 1. After mixing copper oxide with at least one of lanthanum oxide and lanthanum carbonate and heating and melting the mixture, the temperature of the melt is lowered, and microcrystals represented by the general formula La 2 CuO 4 are placed on a seed crystal. A method for producing a lanthanum cuprate single crystal, which comprises precipitating and growing a lanthanum cuprate single crystal. 2. The mixing ratio of at least one of the lanthanum oxide and lanthanum carbonate and the copper oxide is 28.9 to 28.9.
The method for producing a lanthanum cuprate single crystal according to claim 1, characterized in that the ratio is 7.1 mol % to 71.1 to 92.9 mol %. 3. The method for producing a lanthanum cuprate single crystal according to claim 1, wherein the lanthanum cuprate contains a small amount of a different element.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62109518A JPS63274696A (en) | 1987-05-01 | 1987-05-01 | Production of cupric acid-lanthanum single crystal |
| US07/168,021 US4956334A (en) | 1987-05-01 | 1988-03-14 | Method for preparing a single crystal of lanthanum cuprate |
| EP88104090A EP0288709B1 (en) | 1987-05-01 | 1988-03-15 | method for preparing a single crystal of lanthanum cuprate |
| DE8888104090T DE3872922T2 (en) | 1987-05-01 | 1988-03-15 | METHOD FOR THE PRODUCTION OF LANTHANE SUPER SINGLE CRYSTAL. |
| US07/521,624 US5057492A (en) | 1987-05-01 | 1990-05-10 | Method for preparing a single crystal of lanthanum cuprate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62109518A JPS63274696A (en) | 1987-05-01 | 1987-05-01 | Production of cupric acid-lanthanum single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63274696A JPS63274696A (en) | 1988-11-11 |
| JPH0471876B2 true JPH0471876B2 (en) | 1992-11-16 |
Family
ID=14512294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62109518A Granted JPS63274696A (en) | 1987-05-01 | 1987-05-01 | Production of cupric acid-lanthanum single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63274696A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100430751B1 (en) * | 2000-02-23 | 2004-05-10 | 주식회사 세라콤 | Method for Single Crystal Growth of Perovskite Oxides |
-
1987
- 1987-05-01 JP JP62109518A patent/JPS63274696A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63274696A (en) | 1988-11-11 |
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