JPH0472338B2 - - Google Patents
Info
- Publication number
- JPH0472338B2 JPH0472338B2 JP5770685A JP5770685A JPH0472338B2 JP H0472338 B2 JPH0472338 B2 JP H0472338B2 JP 5770685 A JP5770685 A JP 5770685A JP 5770685 A JP5770685 A JP 5770685A JP H0472338 B2 JPH0472338 B2 JP H0472338B2
- Authority
- JP
- Japan
- Prior art keywords
- collector
- collector electrode
- thermal conductivity
- support plate
- interposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 13
- 125000006850 spacer group Chemical group 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims 1
- 239000000919 ceramic Substances 0.000 description 9
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052845 zircon Inorganic materials 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- -1 steatite Chemical compound 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/02—Electrodes; Magnetic control means; Screens
- H01J23/027—Collectors
- H01J23/0275—Multistage collectors
Landscapes
- Microwave Tubes (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、進行波管、クライストロン、その
他の電子ビーム直進形マイクロ波管の多段形コレ
クタ電極構体の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to improvements in multistage collector electrode structures for traveling wave tubes, klystrons, and other electron beam rectilinear microwave tubes.
この種マイクロ波管は、電子銃部のビーム下流
に遅波回路のような高周波作用部、およびコレク
タ電極構体が配置されてなる。例えば衛星搭載用
の進行波管などには、電力利用効率を高めるため
コレクタ電位を低下させて動作させるいわゆる多
段形コレクタ電極構体が採用される。この多段形
コレクタ電極構体は、複数個のコレクタ電極が、
セラミツクのようなリング状絶縁支持体により電
気的に絶縁して積重ねられる。各コレクタ電極で
発生するビーム損失熱は、効率よく外部に伝導あ
るいは輻射により放射されるようにしなければな
らない。このため各コレクタ電極間に介在させる
セラミツク絶縁体としては、高熱伝導率の材料が
採用され、それにはよく知られるようにベリリア
セラミツクが適している。
This type of microwave tube has a high frequency acting part such as a slow wave circuit and a collector electrode structure arranged downstream of the beam of the electron gun part. For example, traveling wave tubes mounted on satellites employ so-called multistage collector electrode structures that operate by lowering the collector potential in order to increase power utilization efficiency. This multi-stage collector electrode structure has a plurality of collector electrodes.
They are electrically insulated and stacked by ring-shaped insulating supports such as ceramics. Beam loss heat generated at each collector electrode must be efficiently radiated to the outside by conduction or radiation. For this reason, a material with high thermal conductivity is used as the ceramic insulator interposed between each collector electrode, and as is well known, beryllia ceramic is suitable for this material.
ところで、とくに衛星搭載用の進行波管などで
は、コレクタ部の外囲器カバーが衛星本体外に露
出される場合があり、その場合は太陽熱入射の断
続などでコレクタ部の温度変化が大きくこのため
遅波回路部の温度が変化しやすい。すると遅波回
路特性、永久磁石の磁力変化が生じ動作不安定の
原因になりやすい。したがつてこの遅波回路部の
温度変化を確実に抑制しなければならない。 By the way, especially in traveling wave tubes mounted on satellites, the envelope cover of the collector part is sometimes exposed outside the satellite body, and in that case, the temperature of the collector part changes greatly due to intermittent solar heat incidence, etc. The temperature of the slow wave circuit section changes easily. This causes changes in the slow wave circuit characteristics and the magnetic force of the permanent magnet, which tends to cause unstable operation. Therefore, it is necessary to reliably suppress temperature changes in this slow wave circuit section.
この発明は、以上の事情に鑑みてなされたもの
で、各コレクタ電極の温度を均等化するとともに
これらコレクタ電極から遅波回路等の高周波作用
部への熱伝導率をより一層確実に抑制しうるマイ
クロ波管の多段形コレクタ電極構体を提供するも
のである。
This invention was made in view of the above circumstances, and can equalize the temperature of each collector electrode and more reliably suppress the thermal conductivity from these collector electrodes to high frequency acting parts such as slow wave circuits. A multi-stage collector electrode structure for a microwave tube is provided.
この発明は、高周波作用部に電気的に同電位と
されたコレクタ支持板と、そのすぐ下流に位置す
るコレクタ電極との間に介在された絶縁支持体
を、他の下流のコレクタ電極相互間に位置する絶
縁支持体に比べて、熱伝導率の小さい材料で形成
してなるマイクロ波管の多段形コレクタ電極構体
である。
This invention provides an insulating support interposed between a collector support plate which is electrically at the same potential in a high frequency acting part and a collector electrode located immediately downstream thereof, and an insulating support between the other downstream collector electrodes. This is a multi-stage collector electrode structure for a microwave tube formed of a material having a lower thermal conductivity than the insulating support on which it is located.
以下図面を参照してその実施例を説明する。な
お同一部分は同一符号であらわす。
Examples thereof will be described below with reference to the drawings. Note that the same parts are represented by the same symbols.
第１図乃至第４図に示す実施例は、ヘリツクス
形進行波管にこの発明を適用したものであつて次
の構造を有する。同図中の符号１１はヘリツクス
遅波回路からなる高周波作用部、１２はそのヘリ
ツクス、１３はパイプ状真空容器、１４は周期磁
界装置のリング状永久磁石、１５はシムリング、
１６はシムリングに接合された伝達熱板、１７は
ヒートシンクを兼ねる基台、１８はコレクタ側端
板、１９は出力同軸線路、２０は出力導波管、２
１はマツチングポスト、２２はコレクタ部、２３
は接続用端板、２４は高熱抵抗ベローズ、２５は
４個の薄肉支持筒、２６はコレクタ支持板、２７
はそれに保持された漏斗状のステンレス製熱シー
ルド、２８，２９，３０，３１はそれぞれ電子ビ
ーム上流側から下流側に所定間隔で並べられたモ
リブデン製の漏斗状第１、第２、第３、第４コレ
クタ電極、３２は第４コレクタの底部電極、３３
は各シールド円筒、３４は４組のコレクタ電極支
持構体、35はそのモリブデン製支持棒、３６はア
ルミナセラミツクのような低熱伝導性の絶縁パイ
プ、３７，３８は第２図にも示す形状のリング状
セラミツクからなる絶縁支持体、３９は伝熱支持
板、３９ａはその透孔、４０，４１は固定用ナツ
ト、４２，４３はコレクタ真空外囲器を兼ねるカ
バー、４４は特定のコレクタ電極に動作電圧を供
給するコレクタ電極リード、４５はリード貫通用
透孔、４６は絶縁チユーブ、４７はリード端子、
４８はそのカバーをあらわしている。 The embodiment shown in FIGS. 1 to 4 is an application of the present invention to a helical traveling wave tube and has the following structure. In the same figure, reference numeral 11 is a high-frequency action section consisting of a helix slow-wave circuit, 12 is a helix thereof, 13 is a pipe-shaped vacuum vessel, 14 is a ring-shaped permanent magnet of a periodic magnetic field device, 15 is a shim ring,
16 is a heat transfer plate joined to a shim ring, 17 is a base that also serves as a heat sink, 18 is a collector side end plate, 19 is an output coaxial line, 20 is an output waveguide, 2
1 is the matching post, 22 is the collector section, 23
2 is a connection end plate, 24 is a high heat resistance bellows, 25 is four thin-walled support tubes, 26 is a collector support plate, 27
28, 29, 30, and 31 are molybdenum funnel-shaped first, second, and third funnels arranged at predetermined intervals from the upstream side to the downstream side of the electron beam, respectively. 4th collector electrode, 32 is the bottom electrode of the 4th collector, 33
are each shield cylinder, 34 is four sets of collector electrode support structures, 35 is a support rod made of molybdenum, 36 is an insulating pipe of low thermal conductivity such as alumina ceramic, and 37 and 38 are rings having the shape shown in Fig. 2. 39 is a heat transfer support plate, 39a is a through hole thereof, 40 and 41 are fixing nuts, 42 and 43 are covers that also serve as collector vacuum envelopes, and 44 is a support plate that operates on a specific collector electrode. A collector electrode lead for supplying voltage, 45 a through hole for lead penetration, 46 an insulating tube, 47 a lead terminal,
48 represents the cover.
そこでこの発明の特徴は、高周波作用部１１と
電気的に同電位とされ若干ながら伝熱的につなが
つているコレクタ支持板２６および熱シールド２
７と、そのすぐビーム下流に位置する第１コレク
タ電極２８との間に介在されているリング状絶縁
支持体３７を、アルミナ（Al2O3）、ジルコン
（ZrO2）、ステアタイト、フオルステライト、ム
ライトセラミツクのような低熱伝導率で且つ電気
抵抗の高いセラミツクで構成してある。これに対
してそれより下流側の第２乃至第４コレクタ電極
２９，３０，３１および３２、伝熱支持板３９の
相互間に介在するリング状絶縁体３８，３８…
は、ベリリア（BeO）セラミツクのような高熱
伝導率の材料で構成してある。なお各コレクタ電
極の表面には、二次電子放出を抑制するとともに
熱輻射を良好にするためのパイロリテイクグラフ
アイト、あるいはTiN、TiC、TiOのような材料
のCVDコーテイングからなる黒色膜が被着され
ている。またコレクタ真空外囲器を兼ねるカバー
４２，４３の外表面には、赤外熱線を効率よく輻
射するとともに太陽熱線等を有効に反射する例え
ばアルミナ（Al2O3）の白色コーテイング膜が被
膜されている。 Therefore, the feature of the present invention is that the collector support plate 26 and the heat shield 2 are electrically at the same potential as the high-frequency acting part 11 and are connected to the high frequency acting part 11 in a slightly thermally conductive manner.
7 and the first collector electrode 28 located immediately downstream of the beam is made of alumina (Al 2 O 3 ), zircon (ZrO 2 ), steatite, or forsterite. It is made of ceramic with low thermal conductivity and high electrical resistance, such as mullite ceramic. On the other hand, the ring-shaped insulators 38, 38 interposed between the second to fourth collector electrodes 29, 30, 31 and 32 on the downstream side, and the heat transfer support plate 39...
is constructed from a material with high thermal conductivity, such as beryllia (BeO) ceramic. The surface of each collector electrode is coated with a black film made of pyrolytic graphite or CVD coating of materials such as TiN, TiC, and TiO to suppress secondary electron emission and improve thermal radiation. has been done. Further, the outer surfaces of the covers 42 and 43, which also serve as collector vacuum envelopes, are coated with a white coating film of, for example, alumina (Al 2 O 3 ), which efficiently radiates infrared heat rays and effectively reflects solar heat rays. ing.
これによつて、進行波管の動作において捕捉電
子ビームにより相対的に温度が高くなる第１コレ
クタ電極２８、および第４コレクタ底部電極３２
からの熱は、他の第２、第３、第４コレクタ電極
からの熱とともに高熱伝導率の絶縁支持体３８に
より均等化されて伝熱支持板３９を介し、また各
電極の外周面から輻射により外囲器カバー４２，
４３に伝導され、管外に輻射放散される。そして
とくに、温度が高くなりやすい第１コレクタ電極
２８とコレクタ支持板２６および熱シールド２７
との間には、低熱伝導率の材料からなる絶縁支持
体３７が介在されているので、このコレクタ電極
側から高周波作用部１１の方への熱伝導が一層抑
制される。 As a result, the temperature of the first collector electrode 28 and the fourth collector bottom electrode 32 become relatively high due to the captured electron beam during operation of the traveling wave tube.
The heat from the collector electrodes is equalized by the high thermal conductivity insulating support 38 along with the heat from the other second, third, and fourth collector electrodes, and is radiated from the outer peripheral surface of each electrode through the heat transfer support plate 39. The envelope cover 42,
43 and is radiated outside the tube. In particular, the first collector electrode 28, the collector support plate 26, and the heat shield 27, which tend to have high temperatures.
Since the insulating support body 37 made of a material with low thermal conductivity is interposed between the collector electrode side and the high-frequency acting part 11, heat conduction from the collector electrode side to the high-frequency action section 11 is further suppressed.
第５図および第６図に示す実施例は、コレクタ
支持板２６および熱シールド２７と、第１コレク
タ電極２８との間に介在する低熱伝導性の絶縁体
３７として、中間支持体６１の両端に低熱伝導率
の材料からなるリング状スペーサ６２，６３を配
置したものである。これらスペーサ６２，６３と
しては、たとえばジルコンセラミツクのようなと
くに低熱伝導率の材料を使用することがきる。こ
の構造によれば、リング状中間支持体６１の材料
は電気抵抗が高い材料であればよく、第１図に示
したような他の各コレクタ電極間に介在するベリ
リアセラミツクのような高熱伝導性の絶縁支持体
と同一のものを使用することが可能である。 In the embodiment shown in FIGS. 5 and 6, a low thermal conductivity insulator 37 interposed between the collector support plate 26, the heat shield 27, and the first collector electrode 28 is provided at both ends of the intermediate support 61. Ring-shaped spacers 62 and 63 made of a material with low thermal conductivity are arranged. These spacers 62, 63 can be made of a material with particularly low thermal conductivity, such as zircon ceramic. According to this structure, the material of the ring-shaped intermediate support 61 may be a material with high electrical resistance, and may be a material with high thermal conductivity such as beryllia ceramic interposed between the other collector electrodes as shown in FIG. It is possible to use the same insulating support as the standard insulating support.
第７図に示す実施例は、コレクタ支持体２６
と、熱シールド２７との間にも、低熱伝導性のセ
ラミツク製熱絶縁リング７１を介在し、熱シール
ド２７と支持板２６とを細い導電ワイヤ７２によ
り電気的に短絡したものである。この実施例によ
れば、コレクタ電極からの輻射熱を受ける熱シー
ルド２７の熱が、コレクタ支持体２６に伝導され
にくいのでさらに高周波作用部側への熱伝達の抑
制効果が高まる。 The embodiment shown in FIG.
A heat insulating ring 71 made of ceramic having low thermal conductivity is interposed between the heat shield 27 and the heat shield 27, and the heat shield 27 and the support plate 26 are electrically short-circuited by a thin conductive wire 72. According to this embodiment, the heat of the heat shield 27 that receives radiant heat from the collector electrode is not easily conducted to the collector support 26, so that the effect of suppressing heat transfer to the high-frequency acting section side is further enhanced.
この発明によれば、高周波作用部に電気的に同
電位とされたコレクタ支持板と、そのすぐ下流に
位置するコレクタ電極との間に介在された絶縁支
持体を、それより下流のコレクタ電極相互間に位
置する絶縁支持体に比べて、熱伝導率の小さい材
料で形成してなるため、このコレクタ電極から高
周波作用部側への不所望な熱伝達が一層確実に抑
制される。したがつてコレクタ電極部側の温度変
化が高周波作用部側に影響しにくいので、動作特
性の変動を抑制することができる。
According to this invention, the insulating support interposed between the collector support plate which is electrically at the same potential in the high-frequency acting part and the collector electrode located immediately downstream thereof is connected to the collector electrode located downstream of the collector support plate. Since it is made of a material with a lower thermal conductivity than the insulating support located between, undesired heat transfer from the collector electrode to the high frequency acting section side can be more reliably suppressed. Therefore, temperature changes on the collector electrode side are less likely to affect the high frequency action section, so fluctuations in operating characteristics can be suppressed.
第１図はこの発明の一実施例を示す縦断面図、
第２図はその要部斜視図、第３図は第１図の３−
３における横断面図、第４図は第３図の４−４に
おける部分縦断面図、第５図はこの発明の他の実
施例を示す半断面図、第６図はその要部分解斜視
図、第７図はこの発明のさらに他の実施例を示す
要部縦断面図である。
１１……高周波作用部、２２……コレクタ電極
構体、２６……コレクタ支持板、２８……第１コ
レクタ電極、２９，２９，３０，３１……第２、
第３、第４コレクタ電極、３２……コレクタ底部
電極、３７……低熱伝導性絶縁支持体、３８……
高熱伝導性絶縁支持体、６２，６３……低熱伝導
性スペーサ。
FIG. 1 is a longitudinal sectional view showing an embodiment of the present invention;
Figure 2 is a perspective view of the main part, Figure 3 is 3-3 in Figure 1.
3, FIG. 4 is a partial vertical sectional view at 4-4 in FIG. 3, FIG. 5 is a half sectional view showing another embodiment of the invention, and FIG. 6 is an exploded perspective view of the main part , FIG. 7 is a vertical sectional view of a main part showing still another embodiment of the present invention. 11 ... High frequency action part, 22 ... Collector electrode structure, 26... Collector support plate, 28... First collector electrode, 29, 29, 30, 31... Second,
Third and fourth collector electrodes, 32... Collector bottom electrode, 37... Low thermal conductivity insulating support, 38...
High thermal conductivity insulating support, 62, 63...Low thermal conductivity spacer.
Claims (1)
クタ支持板に、複数個のコレクタ電極が絶縁支持
体を介し互いに電気的に絶縁されて配設されてな
る多段形コレクタ電極構体において、 上記コレクタ支持板とそのすぐ下流に位置する
コレクタ電極との間に介在された絶縁支持体は、
他のコレクタ電極相互間に位置する絶縁支持体に
比べて熱伝導率の小さい材料で形成されてなるこ
とを特徴とするマイクロ波管の多段形コレクタ電
極構体。 ２ コレクタ支持板とそのすぐ下流に位置するコ
レクタ電極との間に介在された絶縁支持体は、少
なくともその一部に低熱伝導性のスペーサが介在
された複合体からなる特許請求の範囲第１項記載
のマイクロ波管の多段形コレクタ電極構体。[Claims] 1. A multi-stage collector in which a plurality of collector electrodes are electrically insulated from each other and arranged on a collector support plate that is electrically at the same potential as the high-frequency action part via an insulating support. In the electrode structure, the insulating support interposed between the collector support plate and the collector electrode located immediately downstream thereof is
A multi-stage collector electrode structure for a microwave tube, characterized in that it is formed of a material having a lower thermal conductivity than an insulating support located between other collector electrodes. 2. Claim 1, wherein the insulating support interposed between the collector support plate and the collector electrode located immediately downstream thereof is a composite body in which a spacer with low thermal conductivity is interposed in at least a portion thereof. A multi-stage collector electrode structure of the microwave tube described above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5770685A JPS61218044A (en) | 1985-03-22 | 1985-03-22 | Multi-stage type collector electrode structure of micro wave tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5770685A JPS61218044A (en) | 1985-03-22 | 1985-03-22 | Multi-stage type collector electrode structure of micro wave tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61218044A JPS61218044A (en) | 1986-09-27 |
| JPH0472338B2 true JPH0472338B2 (en) | 1992-11-18 |
Family
ID=13063383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5770685A Granted JPS61218044A (en) | 1985-03-22 | 1985-03-22 | Multi-stage type collector electrode structure of micro wave tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61218044A (en) |
-
1985
- 1985-03-22 JP JP5770685A patent/JPS61218044A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61218044A (en) | 1986-09-27 |
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