JPH0472348B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a processing device for finely processing materials using various ion beams. Conventional ion beam processing equipment uses a single ion species and changes the processing speed by changing the acceleration energy of the ions. However, in the case of this type of equipment, some ions cannot be used for processing depending on the material, and in order to change the processing speed, the acceleration energy of the ions is changed, so the degree to which ions are implanted into the material differs, and the material after processing It was difficult to obtain consistent quality. Also, a device that processes using multiple ion species has been proposed, but since multiple ion species cannot be stacked on the same axis at the same time,
It took time to adjust the ion beam, which increased material processing time. In addition, the monitoring mechanism for processing materials was not sufficient, and skill was required to perform precise processing.

The present invention has been made to eliminate the above-mentioned drawbacks of the conventional method, and enables processing of minute parts by selecting appropriate ion species while observing the material surface.

The present invention will be explained in detail below with reference to the configuration diagram shown in FIG. This apparatus is composed of an ion beam irradiation system A that processes a material by sputtering and an electron beam irradiation system B that monitors the processed surface. First, the ion beam irradiation system A will be explained. Ion source I ₁ ~
The various ions produced in I ₃ are accelerated in slits S ₁ and S ₂ to which acceleration and voltage are applied, and are transferred to magnet B through individual ion species blanking and fine adjustment electrodes C ₁ to C ₃ . incident. They are deflected 90 degrees by magnet B, and overlapped coaxially by slit _S3 . The slits S ₄ and S ₅ and the polarizing plate C ₄ are electrodes for fine adjustment of ion trajectories and ion blanking. The ion beam that has passed through S ₄ and S ₅ C ₄ is energy dispersed by the electron attrizer C ₅ and is then redistributed.
Deflected by 90°. Output slit S ₆ , deflection plate C ₆ , C ₇
After passing through the Einzel lens _L2 , it becomes a convergent beam. The ion beam irradiated onto the material surface SA on the sample stage ST processes the material by sputtering action. By applying an appropriate potential to the X-Y deflection plate _C7 and deflecting the beam, the material can be processed at a predetermined position. D ₁ is a detector for secondary ions from the machined surface.

Next, the electron beam irradiation system for monitoring the processed surface will be explained. Electrons generated in the electron gun F by the thermal filament or field emission are extracted by the extraction electrode _S7 , collected by the condenser _L1 , and focused to form a long focal point. deflection plate
C ₃ and C ₆ adjust it so that it is coaxial with the ion beam. The Einzel lens is deflected to scan the processing surface by the X-Y deflection plate _C7 .
It becomes a convergent beam due to L ₂ and scans the processing surface.
The machined surface is observed by detecting secondary electrons from the machined surface with detector _D2 .

Next, an example of the operation of this device will be explained. Prior to processing, the individual ion beams used for processing are aligned coaxially (passing through slits S ₃ and S ₄ ) from C ₁ to C _{3 .}
Adjust. For each ion species, specify an arbitrary energy width using the electrostatic analyzer C ₅ , adjust the potentials of the deflection plates C ₄ and C ₆ , and adjust it so that it passes through the slit S ₆ and the Einzel lens L ₂ . I'll keep it. The electron beam also reverses the polarity of the potentials applied to S ₆ , C ₆ , and C ₇ L ₂ , and the electrostatic analyzer
The potential of C ₅ is set to zero, and the potentials of deflection plates C ₃ and C ₆ are adjusted so that they are coaxial with the ion beam. These adjusted potentials are set so that they are switched in conjunction with each other when the ion species or electrons are switched. As an example, when processing a material with a two-layer structure as shown in Figure 2, the surface is observed with an electron beam during the first t ₁ to _{t 2} as shown in Figure 3 (E in the figure). , Next, the polarity of the electrode is changed and the material is processed with the ion species I ₁ for t ₂ to t ₃ hours, and the processed surface is observed again with the electron beam for t ₃ to t ₄ hours.

Next, switch the potential of the electrode again and select ionic species I ₂
The material is processed for t ₄ to t ₅ hours, and the surface is observed again with an electron beam for t ₅ to t ₆ hours. As described above, it is possible to process the material by appropriately changing the ion species while observing the processed surface.

As described above, according to the present invention, the material can be processed while observing the processed surface from directly above, so the shape of the processed surface can be observed accurately. Furthermore, since the ion beams from a plurality of ion sources are superimposed on the same axis, the appropriate ion species can be changed in a short time according to the material to be processed. The above features are particularly effective for processing materials with a layered structure.

[Brief explanation of the drawing]

1A and 1B are block diagrams showing the apparatus of the present invention, FIG. 2 is a sectional view showing materials, and FIG. 3 is a time chart. _I1 to _I3 ...Ion source, _S1 to _S7 ...Slit, _C1
~C ₄ , C ₆ ~ C ₈ ... Deflection plate, C ₅ ... Electrostatic analyzer, B ... Magnet, F ... Electron gun, L ₁ ...
...Magnetic field type lens, L ₂ ...Einzel lens,
S _A ... processing material, S _T ... stage, D ₁ ... secondary ion detector, D ₂ ... secondary electron detector.

Claims (1)

[Claims] 1. Having optical axes of ion beams parallel to each other,
A plurality of ion sources of different ion types for processing the processed surface of a sample, a blanking electrode that blanks the optical axis of each of the ion beams, and an ion beam that has passed through the blanking electrode is deflected by approximately 90 degrees. A magnet is used to overlap each ion beam on the same axis, and the ion beam that has passed through the magnet is
Deflect by 90° and specify the energy width of the ion.
an electrostatic analyzer for guiding the ion beam to the processed surface of the sample; and an electrostatic analyzer installed on the top of the electrostatic analyzer to generate an electron beam coaxial with the electrostatic analyzer emission side optical axis of the ion beam, an electron gun that irradiates the processed surface with the electron beam; a detector that detects secondary electrons generated from the sample processed surface by irradiation with the electron beam and observes the processed surface; and an emission side of the electrostatic analyzer. 1. A microfabrication apparatus using a plurality of ion sources, comprising a deflection plate for deflecting and scanning the ion beam and the electron beam provided in the ion beam.