JPH0473632B2 - - Google Patents
Info
- Publication number
- JPH0473632B2 JPH0473632B2 JP59011587A JP1158784A JPH0473632B2 JP H0473632 B2 JPH0473632 B2 JP H0473632B2 JP 59011587 A JP59011587 A JP 59011587A JP 1158784 A JP1158784 A JP 1158784A JP H0473632 B2 JPH0473632 B2 JP H0473632B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- sensitive structure
- temperature sensor
- strain gauge
- receiving surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/50—Devices controlled by mechanical forces, e.g. pressure
Landscapes
- Force Measurement Appropriate To Specific Purposes (AREA)
- Pressure Sensors (AREA)
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明は、単結晶半導体よりなる感圧構造体の
受圧面に角度をなす面の一導電形の表面層に逆導
電形の複数のストレンゲージ領域を備え、ストレ
ンゲージの抵抗値に変化によつて受圧面に印加さ
れる力の３成分を検出する圧覚センサに関する。[Detailed description of the invention] [Technical field to which the invention pertains] The present invention relates to a pressure sensitive structure made of a single crystal semiconductor, in which a plurality of striations of opposite conductivity type are formed on a surface layer of one conductivity type on a surface forming an angle to the pressure receiving surface of a pressure sensitive structure made of a single crystal semiconductor. The present invention relates to a pressure sensor that includes a gauge region and detects three components of force applied to a pressure-receiving surface due to changes in the resistance value of a strain gauge.
各種の物体を取り扱うロボツトハンドにおい
て、物体の種類に応じた適正な把持力で物体を扱
うためには、把持力すなわちロボツトハンドのフ
インガに掛かる荷重とその分布を精密に検出して
把持力を制御しなければならない。そのような目
的で第１図に示すような小形の圧覚センサが提案
され、面状分布の検出にはこの圧覚センサによつ
てアレイを構成する。この圧覚センサは、例えば
Ｎ形シリコン単結晶からなるリング状感圧構造体
１の受圧面１１に垂直な面１２に拡散によりＰ形
ストレンゲージ領域２１〜２４，３１〜３４，４
１〜４４を形成し、受圧面に対向する底面１３に
より支持体に固定したものである。ストレンゲー
ジ２１〜２４から構成されるブリツジの出力電圧
により受圧面１１に加わる力の受圧面に垂直方向
成分Fz、ストレンゲージ３１〜３４から構成さ
れるブリツジの出力電圧により受圧面１１に平行
な方向の１成分Fx、ストレンゲージ４１〜４４
から構成されるブリツジの出力電圧により残りの
１成分Fyを検出する。しかしこのような拡散形
ストレンゲージは抵抗値および歪による抵抗変化
率すなわちゲージ率に大きな温度依存性がある。
しかもこの温度依存性は、例えばＰ形シリコン＜
111＞方向について第２図示すように不純物濃度
によつてもその値が大きく変化する。例えば
1018／cm3の不純物濃度の場合には、抵抗変化率α
が約30％／100℃、ゲージ率温度変化率βが約−
30％／100℃の大きな値を持つている。そのほか、
ストレンゲージで構成されるブリツジの力が零で
ある場合の出力、すなわち零点出力にも温度依存
性をもつている。従つてストレンゲージブリツジ
の出力信号から正確に力の３成分を算出するため
には、正確に温度を知る必要がある。
In a robot hand that handles various objects, in order to handle the object with the appropriate gripping force depending on the type of object, it is necessary to precisely detect the gripping force, that is, the load applied to the robot hand's fingers and its distribution, and control the gripping force. Must. For such a purpose, a small pressure sensor as shown in FIG. 1 has been proposed, and an array is formed of these pressure sensors to detect a planar distribution. This pressure sensor is constructed by diffusing P-type strain gauge regions 21 to 24, 31 to 34, and 4 into a surface 12 perpendicular to a pressure-receiving surface 11 of a ring-shaped pressure-sensitive structure 1 made of, for example, N-type silicon single crystal.
1 to 44, and is fixed to the support body by the bottom surface 13 facing the pressure receiving surface. A component Fz of the force applied to the pressure receiving surface 11 in a direction perpendicular to the pressure receiving surface due to the output voltage of the bridge made up of the strain gauges 21 to 24, and a direction parallel to the pressure receiving surface 11 due to the output voltage of the bridge made up of the strain gauges 31 to 34. 1-component Fx, strain gauge 41-44
The remaining one component Fy is detected by the output voltage of the bridge composed of. However, in such a diffusion type strain gauge, the resistance value and the rate of change in resistance due to strain, that is, the gauge factor, have a large temperature dependence.
Moreover, this temperature dependence is, for example, P-type silicon <
As shown in FIG. 2, the value in the 111> direction changes greatly depending on the impurity concentration. for example
In the case of an impurity concentration of 10 18 /cm 3 , the resistance change rate α
is approximately 30%/100℃, and the gauge factor temperature change rate β is approximately -
It has a large value of 30%/100℃. others,
The output when the force of the bridge made up of the strain gauge is zero, that is, the zero point output, also has temperature dependence. Therefore, in order to accurately calculate the three components of force from the output signal of the strain gauge bridge, it is necessary to accurately know the temperature.
本発明はこのような温度変化に対応して正確に
力の３成分の算出することが容易にできる圧覚セ
ンサを提供することを目的とする。
An object of the present invention is to provide a pressure sensor that can easily and accurately calculate the three components of force in response to such temperature changes.
本発明によれば、圧覚センサの感圧構造体のス
トレンゲージ形成面に温度センサ領域を形成する
ことにより上記の目的を達成する。
According to the present invention, the above object is achieved by forming a temperature sensor region on the strain gauge forming surface of the pressure sensitive structure of the pressure sensor.
第３図に示した一実施例ではＮ形感圧構造体１
の面１２の歪に小さい領域に拡散によりＰ形抵抗
領域５が形成されている。第４図は感受構造体の
シリコン基板の両面に形成されたエピタキシヤル
層の一方にFz検出用のストレンゲージ２１〜２
４（図ａ）、他面のエピタキシヤル層にFx検出用
のストレンゲージ３１〜３４およびFy検出用ス
トレンゲージ４１〜４４（図ｂ）を形成した場合
の実施例で、拡散抵抗形温度センサ５は歪の影響
を受けるので、歪の最も小さいゲージ２１と２２
の中間に配置され、図のように、端子６に配線７
により継続されている。一方の配線は、接触部８
から基板を経て端子９に至つている。第５図は温
度センサとしてトランジスタを形成した実施例を
示し、Ｐ形シリコンウエーハ１４上に設けたＮ形
エピタキシヤル層１５に、Ｐ形ストレンゲージ領
域２０を拡散し、P+拡散層１６により分離され
た領域にベース層としてのＰ形拡散層１７、コレ
クタ接触層としてのN+拡散層１８、さらにＰ形
層１７の中にエミツタ層としてのN+拡散層１９
を形成して感圧構造体内にNPNトランジスタを
構成したものである。同様に温度センサとしてダ
イオードを形成してもよい。これらの抵抗、トラ
ンジスタあるにはダイオードを制御回路に接続
し、特性の温度変化を利用して感圧構造体に加わ
つた力の算出あるいは零点出力の温度補償を行
う。
In one embodiment shown in FIG.
A P-type resistance region 5 is formed by diffusion in a region with small strain on the surface 12. Figure 4 shows strain gauges 21 to 2 for Fz detection on one side of the epitaxial layer formed on both sides of the silicon substrate of the sensing structure.
4 (Figure a) is an example in which strain gauges 31 to 34 for Fx detection and strain gauges 41 to 44 for Fy detection (Figure b) are formed on the epitaxial layer on the other side, and the diffusion resistance type temperature sensor 5 are affected by strain, so gauges 21 and 22 with the least strain
As shown in the figure, wire 7 is connected to terminal 6.
It is continued by One wiring is connected to the contact part 8
The terminal 9 is connected to the terminal 9 via the board. FIG. 5 shows an embodiment in which a transistor is formed as a temperature sensor, in which a P-type strain gauge region 20 is diffused into an N-type epitaxial layer 15 provided on a P-type silicon wafer 14 and separated by a P + diffusion layer 16. A P type diffusion layer 17 as a base layer, an N + diffusion layer 18 as a collector contact layer, and an N + diffusion layer 19 as an emitter layer in the P type layer 17.
This structure forms an NPN transistor within the pressure-sensitive structure. Similarly, a diode may be formed as a temperature sensor. These resistors, transistors, or diodes are connected to a control circuit, and temperature changes in the characteristics are used to calculate the force applied to the pressure-sensitive structure or to compensate for the temperature of the zero point output.
本発明は圧覚センサの感圧構造体のストレンゲ
ージ形成面に温度センサを形成し、ストレンゲー
ジから得られる出力信号の温度補償に利用するも
ので、例えばロボツトハンドに本発明による圧覚
センサを用いる場合、温度の異なる物体を把持し
た際の圧覚センサの急激な温度変化を補償するこ
とができて正確な把持力の検出ができる。
The present invention forms a temperature sensor on the strain gauge forming surface of a pressure-sensitive structure of a pressure sensor, and utilizes the temperature sensor for temperature compensation of an output signal obtained from the strain gauge. For example, when the pressure sensor according to the present invention is used in a robot hand. , it is possible to compensate for sudden temperature changes in the pressure sensor when objects with different temperatures are gripped, and accurate gripping force can be detected.
第１図は本発明の対象である圧覚センサ感圧構
造体の斜視図、第２図は半導体ストレンゲージ抵
抗の温度特性と不純物濃度の関係線図、第３図は
本発明の一実施例の感圧構造体の斜視図、第４図
は異なる実施例の感圧構造体を示し、ａは一方の
面の平面図、ｂは他方の面の平面図、第５図はさ
らに別の実施例の感圧構造体の要部断面図であ
る。
１……感圧構造体、１１……受圧面、１４……
基板、１５……エピタキシヤル層、５……拡散抵
抗形温度センサ、２０，２１〜２４，３１〜３
４，４１〜４４……ストレンゲージ領域。
FIG. 1 is a perspective view of a pressure sensitive structure for a pressure sensor which is the object of the present invention, FIG. 2 is a diagram showing the relationship between temperature characteristics and impurity concentration of a semiconductor strain gauge resistor, and FIG. 3 is a diagram showing an example of the present invention. A perspective view of the pressure-sensitive structure, FIG. 4 shows a pressure-sensitive structure of different embodiments, a is a plan view of one side, b is a plan view of the other side, and FIG. 5 is a still another embodiment. FIG. 1...Pressure sensitive structure, 11...Pressure receiving surface, 14...
Substrate, 15...Epitaxial layer, 5...Diffused resistance type temperature sensor, 20, 21-24, 31-3
4, 41-44...Strain gauge area.
Claims (1)
角度をなす面の一導電形の表面層に逆導電形の複
数のストレンゲージ領域を備え、ストレンゲージ
の抵抗値の変化によつて受圧面に印加される力の
３成分を検出するものにおいて、感圧構造体の前
記ストレンゲージ形成面に温度センサ領域が形成
されたことを特徴とする圧覚センサ。 ２ 特許請求の範囲第１項記載のセンサにおい
て、温度センサが拡散抵抗であることを特徴とす
る圧覚センサ。 ３ 特許請求の範囲第１項記載のセンサにおい
て、温度センサがダイオードであることを特徴と
する圧覚センサ。 ４ 特許請求の範囲第１項記載のセンサにおい
て、温度センサがトランジスタであることを特徴
とする圧覚センサ。 ５ 特許請求の範囲第１項ないし第４項のいずれ
かに記載のセンサにおいて、感圧構造体が受圧面
を上方として中心部に円形穴を有するリング状構
造を成し、温度センサ領域が前記感圧構造体の内
周と外周とのほぼ中央領域であつて且つ前記感圧
構造体の上下方向ほぼ中央領域に位置することを
特徴とする圧覚センサ。[Scope of Claims] 1 A plurality of strain gauge regions of opposite conductivity type are provided on a surface layer of one conductivity type on a surface forming an angle with the pressure receiving surface of a pressure sensitive structure made of a single crystal semiconductor, and the resistance value of the strain gauge is A pressure sensor for detecting three components of force applied to a pressure receiving surface due to changes, characterized in that a temperature sensor region is formed on the strain gauge forming surface of the pressure sensitive structure. 2. The pressure sensor according to claim 1, wherein the temperature sensor is a diffusion resistance. 3. The pressure sensor according to claim 1, wherein the temperature sensor is a diode. 4. The pressure sensor according to claim 1, wherein the temperature sensor is a transistor. 5. In the sensor according to any one of claims 1 to 4, the pressure-sensitive structure has a ring-shaped structure with a pressure-receiving surface facing upward and a circular hole in the center, and the temperature sensor region is located above the A pressure sensor, characterized in that it is located in an approximately central region between an inner periphery and an outer periphery of a pressure sensitive structure, and is located approximately in a vertically central region of the pressure sensitive structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59011587A JPS60154677A (en) | 1984-01-25 | 1984-01-25 | Sense of pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59011587A JPS60154677A (en) | 1984-01-25 | 1984-01-25 | Sense of pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60154677A JPS60154677A (en) | 1985-08-14 |
| JPH0473632B2 true JPH0473632B2 (en) | 1992-11-24 |
Family
ID=11782031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59011587A Granted JPS60154677A (en) | 1984-01-25 | 1984-01-25 | Sense of pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60154677A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11099014B2 (en) | 2016-10-18 | 2021-08-24 | Sony Semiconductor Solutions Corporation | Chip module, signal processing method, and electronic equipment |
-
1984
- 1984-01-25 JP JP59011587A patent/JPS60154677A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60154677A (en) | 1985-08-14 |
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