JPH0474645B2 - - Google Patents
Info
- Publication number
- JPH0474645B2 JPH0474645B2 JP62165969A JP16596987A JPH0474645B2 JP H0474645 B2 JPH0474645 B2 JP H0474645B2 JP 62165969 A JP62165969 A JP 62165969A JP 16596987 A JP16596987 A JP 16596987A JP H0474645 B2 JPH0474645 B2 JP H0474645B2
- Authority
- JP
- Japan
- Prior art keywords
- position detection
- image position
- sections
- image
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001514 detection method Methods 0.000 claims description 48
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000010586 diagram Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Measurement Of Optical Distance (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、光学的な距離、運動、変形などの計
測に用いられる半導体像位置検出装置に係わり、
特に、高精度計測に適した半導体像位置検出素子
の構造と、それを用いた像位置検出の高精度化の
方法に関する。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a semiconductor image position detection device used for measuring optical distance, movement, deformation, etc.
In particular, the present invention relates to the structure of a semiconductor image position detection element suitable for high-precision measurement and a method for increasing the precision of image position detection using the same.
（従来の技術）
光学的な位置、距離、運動、変形などの計測に
おける像位置検出素子としては、光電膜層に重ね
て抵抗層を設け、光電膜上に投射された光像部で
生成される光電流が抵抗層を伝わり、その両端の
出力電極に到達して出力される出力電流を検出
し、これらを演算することによつて、光電膜層の
光像の重心的位置を算出する型の半導体位置検出
素子（PSD：Position Sensitive Device）が広
く使用されている。(Prior art) As an image position detection element for optical measurement of position, distance, motion, deformation, etc., a resistive layer is provided over a photoelectric film layer, and a resistive layer is provided on top of a photoelectric film layer, and the image position detection element used in optical measurement of position, distance, movement, deformation, etc. A type in which the photocurrent transmitted through the resistive layer reaches the output electrodes at both ends, detects the output current, and calculates the center of gravity position of the optical image of the photoelectric film layer by calculating these. Semiconductor position sensitive devices (PSDs) are widely used.
第５図にこの従来方式の代表的な半導体位置検
出素子の断面構造の概念図を示した。光Ｌを入射
すると光電膜層Ｐで光電流が生成され、抵抗層Ｒ
を通り出力電極TAおよびTBから出力電流IAおよ
びIBが出力される。出力電流IAおよびIBは、光電
流が光入射位置と出力電極TAおよびTBとの間の
抵抗層の抵抗比に応じて分割された値となり、出
力電流値の差（IB−IA）を出力電流値の和（IA＋
IB）で除した値は、中心からの光入射位置XDに比
例した値となる。従つて、第６図に示される信号
演算回路に出力電流IA，IBを入力し、バツフア増
幅器B1，B2により一旦増幅された後、演算増幅
器A1，A2および割算器÷により上述した演算を
行い、更にこの値をアナログ・デジタル変換器
Ａ／Ｄによりデジタル変換することにより、光入
射位置の情報が得られる。 FIG. 5 shows a conceptual diagram of the cross-sectional structure of a typical semiconductor position detection element of this conventional method. When light L is incident, a photocurrent is generated in the photoelectric film layer P, and the resistance layer R
Output currents I A and I B are output from the output electrodes T A and T B through the terminals. The output currents I A and I B are values obtained by dividing the photocurrent according to the resistance ratio of the resistance layer between the light incident position and the output electrodes T A and T B , and the difference in output current value (I B − I A ) is the sum of the output current values (I A +
The value divided by I B ) is a value proportional to the light incident position X D from the center. Therefore , the output currents I A and I B are input to the signal calculation circuit shown in FIG. Information on the light incident position can be obtained by performing the above-mentioned calculations and then digitally converting this value using an analog-to-digital converter A/D.
（発明が解決しようとする問題点）
この従来方式の像位置検出精度は、主として、
アナログ的信号演算処理系の精度とアナログ・デ
ジタル変換の精度（分解能）に大きく依存してい
る。アナログ演算系の精度の向上は、極めて高価
となるばかりでなく、ある場合には実現がほとん
ど不可能になり、これが半導体像位置検出装置に
おける像位置検出の高精度化（高分解能化）に際
しての大きな障害となつている。(Problems to be solved by the invention) The image position detection accuracy of this conventional method is mainly due to
It largely depends on the accuracy of the analog signal processing system and the accuracy (resolution) of the analog-to-digital conversion. Improving the accuracy of an analog calculation system is not only extremely expensive, but also almost impossible in some cases. This has become a major obstacle.
（問題点を解決するための手段）
上記の問題点を回避し、すなわち、アナログ演
算系およびアナログ・デジタル変換器の精度（分
解能）の向上を必要とせずに、像位置検出の高精
度化が実現できるように本発明では、半導体像位
置検出素子の検出領域を複数の区間に区分し、こ
の区分された区間（以下、区分区間とする）の境
界部に設けられた出力電極の選択により、任意の
１区分区間あるいは任意の連続する複数の区分区
間が１つの半導体像位置検出素子として動作する
ように構成し、計測に適した出力電極を選択作用
することを特徴とする。(Means for solving the problem) It is possible to improve the accuracy of image position detection by avoiding the above problem, that is, without the need to improve the precision (resolution) of the analog calculation system and analog-to-digital converter. In order to achieve this, in the present invention, the detection area of the semiconductor image position detection element is divided into a plurality of sections, and by selecting output electrodes provided at the boundaries of the divided sections (hereinafter referred to as section sections), The present invention is characterized in that it is configured such that any one section or a plurality of consecutive sections operates as one semiconductor image position detection element, and selects an output electrode suitable for measurement.
（作用および発明の効果）
まず、複数の区分区間を間に挟む出力電極を選
択し、その区間を１つの半導体像位置検出素子と
して動作させることにより、光像がどの区分区間
に包含されているかを検知する。次に、光像の属
する区間の両端の出力電極（光像が複数の区分区
間にまたがる場合はこの複数の区分区間の両端の
出力電極）を選択し、その選択区間内での光像位
置を検出する。光像の位置は、選択区間の電極位
置と、選択区間内での光像検出位置とを加え合わ
せることによつて求められる。区分区間境界部の
出力電極の位置は物理的に極めて正確に製作でき
るので、像位置検出精度は、選択された区分区間
内での像位置検出精度のみによつて定まる。ま
た、選択された区間内での像位置検出分解能は、
アナログ演算系、およびＡ／Ｄ変換器で決定され
る精度（分解能）とほぼ等しくなるので、半導体
像位置検出素子全区間に対する実効分解能は、区
分数にほぼ比例的に高められ、アナログ演算系や
Ａ／Ｄ変換器は従来と全く同一のものを使用して
も、従来の方式のものに比べ像位置検出精度（分
解能）は著しく高められる。(Operation and Effects of the Invention) First, by selecting output electrodes sandwiching a plurality of segmented sections and operating the sections as one semiconductor image position detection element, it is possible to determine which segmented section the optical image is included in. Detect. Next, select the output electrodes at both ends of the section to which the light image belongs (if the light image spans multiple sections, the output electrodes at both ends of the multiple sections), and determine the position of the light image within the selected section. To detect. The position of the optical image is determined by adding together the electrode position of the selected section and the optical image detection position within the selected section. Since the position of the output electrode at the segment boundary can be physically manufactured with great precision, the image position detection accuracy is determined only by the image position detection accuracy within the selected segment. In addition, the image position detection resolution within the selected section is
Since the accuracy (resolution) determined by the analog calculation system and the A/D converter is almost the same, the effective resolution for all sections of the semiconductor image position detection element is increased almost in proportion to the number of sections, and Even if the A/D converter is exactly the same as the conventional one, the image position detection accuracy (resolution) is significantly improved compared to the conventional system.
（実施例）
以下、本発明を実施例に基づいて説明する。第
１図は、本発明に基づいて半導体像位置検出素子
の断面構造の概念図である。従来方式の半導体像
位置検出素子の出力電極の間にさらにｎ個の出力
電極（T1，T2…、To）が付加されている。い
ま、像位置検出精度が、Ａ／Ｄ変換の精度（分解
能）で制限されているものとし、第１図に示され
ているように、出力電極T1とT2の間に光がＬ入
射している場合について本発明によりどのように
高精度化を実現できるかを考えてみる。従来方式
と同様に、出力電極TAおよびTBを選択し、これ
らの出力電流より、光入射位置Ｘを求めると、出
力電極TA，TB間をＡ／Ｄ変換器の分解能（例え
ば、10ビツト）で分割した位置精度で光入射位置
Ｘが求まり、光入射位置を含む区間を確定でき
る。更に、光入射位置を包含した最小区間幅の出
力電極（第１図ではT1とT2）を選択し、これら
からの出力電流より、選択された区間内での中か
らの光入射位置XDを求めると、選択された区間
（T1，T2間）をＡ／Ｄ変換器の分解能で分割した
位置精度で選択された区間内での光入射位置XS
が定まり、出力電極T1の位置X1にXSを加え合わ
せることにより全体での光入射位置を確定でき
る。出力電極TA，T1，T2…To，TBの位置は物
理的に極めて正確に製作でき、また、安定性も極
めて高い。従つて、総ての選択区間について、そ
れらの区間をＡ／Ｄ変換器の分解能で分割した精
度で光の入射位置の検出が可能となる。例えば、
等分割にｎ（15）個の出力電極を設け、Ａ／Ｄ変
換器の精度がｍ（10）ビツトとすると、検出区間
全体に対する分解能は（ｎ＋１）×2m（16×1024）
となり、Ａ／Ｄ変換器の精度を高めることなく、
従来法の2m（1024）に対し、分解能を（ｎ＋１）
（16）倍と著しく高めることができる。光入射位
置が区分区間の境界部となり、両側の区間にまた
がるような場合には、連続した２区間を選択する
ことになるので分解能は（ｎ＋１）／２と、上記
の半分になることがあるにしても、従来法に比べ
著しく分解能を向上できる。以上は、像位置検出
精度がＡ／Ｄ変換器の精度に支配されている場合
について説明したものであるが、像位置検出精度
がアナログ演算系の精度等に支配される場合にも
全く同様である。(Examples) Hereinafter, the present invention will be described based on Examples. FIG. 1 is a conceptual diagram of a cross-sectional structure of a semiconductor image position detection element based on the present invention. Further, n output electrodes (T 1 , T 2 . . . , T o ) are added between the output electrodes of the conventional semiconductor image position detection element. Now, assume that the image position detection accuracy is limited by the accuracy (resolution) of A/D conversion, and as shown in Figure 1, light is incident between output electrodes T 1 and T 2 . Let us consider how high precision can be achieved by the present invention in the case where As in the conventional method, when output electrodes T A and T B are selected and the light incident position The light incident position Furthermore, output electrodes (T 1 and T 2 in Figure 1) with the minimum section width that includes the light incident position are selected, and from the output current from these, the light incident position X from within the selected section is determined. When D is calculated, the light incidence position X S within the selected section with the positional accuracy obtained by dividing the selected section (between T 1 and T 2 ) by the resolution of the A/D converter
is determined, and by adding X S to the position X 1 of the output electrode T 1 , the entire light incident position can be determined. The positions of the output electrodes T A , T 1 , T 2 . . . T o , T B can be manufactured with extremely high physical accuracy, and the stability is also extremely high. Therefore, it is possible to detect the light incident position for all selected sections with an accuracy obtained by dividing the sections by the resolution of the A/D converter. for example,
If n (15) output electrodes are equally divided and the accuracy of the A/D converter is m (10) bits, the resolution for the entire detection area is (n + 1) x 2 m (16 x 1024).
Therefore, without increasing the accuracy of the A/D converter,
The resolution has been reduced to (n+1) compared to 2 m (1024) for the conventional method.
(16) can be significantly increased by two times. If the light incidence position is at the boundary of a section and spans sections on both sides, two consecutive sections will be selected, so the resolution may be (n+1)/2, half of the above. However, the resolution can be significantly improved compared to conventional methods. The above explanation is for the case where the image position detection accuracy is controlled by the accuracy of the A/D converter, but the same applies to the case where the image position detection accuracy is controlled by the accuracy of the analog calculation system, etc. be.
第２図は、出力電極選択用スイツチを含んだ、
出力信号演算処理回路のブロツク図である。出力
電極TA，T1，T2…To，TBの内の何れか二つの
電極が出力電極選択回路SW中の電極選択スイツ
チSA，SA1，SA2…SAo，SB1，SB2…SBo…SBにより
選択されてバツフア増幅器B1，B2の入力に接続
される。第２図においては、第１図に対応して、
出力電極T1およびT2が選択された状態が示して
ある。出力電流は、光入射位置を含んだ選択され
た出力電極より出力されることになるので、両端
の出力電極TA，TBに対応した出力電極選択用ス
イツチSAおよびSBは常にONの状態であつても差
し支えない。なお、第２図では外部回路として出
力電極選択用スイツチを示したが、出力電極選択
用スイツチは、半導体像位置検出素子にアナログ
スイツチ回路を集積化し、外部からの選択信号で
所望の区間の出力電極からの出力信号を出力でき
るように構成することが望ましい。 FIG. 2 includes a switch for selecting an output electrode.
FIG. 3 is a block diagram of an output signal arithmetic processing circuit. Any two of the output electrodes T A , T 1 , T 2 ...T o , T B are connected to the electrode selection switches S A , S A1 , S A2 ... S Ao , S B1 in the output electrode selection circuit SW . , S B2 ... S Bo ... S B and connected to the inputs of buffer amplifiers B 1 and B 2 . In Fig. 2, corresponding to Fig. 1,
The output electrodes T 1 and T 2 are shown selected. Since the output current will be output from the selected output electrode including the light incident position, the output electrode selection switches S A and S B corresponding to the output electrodes T A and T B at both ends should always be turned ON. There is no problem even if the condition is the same. Although the output electrode selection switch is shown as an external circuit in Fig. 2, the output electrode selection switch is an analog switch circuit integrated into a semiconductor image position detection element, and outputs a desired section using an external selection signal. It is desirable that the configuration be such that an output signal from the electrode can be output.
第３図は、広い範囲について像位置検出可能と
し、特定の範囲（注目区間：出力電極TMA，TMB
間）に光が入射したら出力電極TMA，TMBを選択
し、像位置を高精度で検出できるように本発明に
基づいた半導体像位置検出素子の断面構造の一例
である。出力電極TA，TBを選択し、光入射位置
が注目区間に入つているか否かを検知し、注目区
間内に入つたら出力電極TMA，TMBを選択してこ
の区間内での光入射位置XMを検出する。全体に
対する光入射位置はTMAの位置XMAと注目区間内
での光入射位置XMの和として得る。 Figure 3 shows that the image position can be detected over a wide range, and the image position can be detected in a specific range (section of interest: output electrodes T MA , T MB
This is an example of the cross-sectional structure of a semiconductor image position detecting element based on the present invention, so that when light enters the area (between 1 and 2), the output electrodes T MA and T MB are selected and the image position can be detected with high precision. Output electrodes T A and T B are selected, and it is detected whether the light incident position is within the section of interest. If it is within the section of interest, output electrodes T MA and T MB are selected and the position of the light incident within this section is detected. Detect the light incident position X M. The light incidence position for the whole is obtained as the sum of the position X MA of T MA and the light incidence position X M within the section of interest.
第４図は、本発明を２次元的な像位置検出素子
へ適用した実施例であり、抵抗層R1，R2が上下
面へ分割された形式の半導体像位置検出素子であ
り、上面の抵抗層R1はＸ方向、下面の抵抗層R2
はＹ方向の像位置検出に用いられる。本実施例に
おいては、３区間に分割した例が示されている
が、一般に任意の区間に分割することが可能であ
る。像位置の検出法は、Ｘ，Ｙの各軸に対して、
それぞれ前述した方法により、出力電極TAX，
TX1，TX2，TBX、およびTAY，TY1，TY2，TBYの
選択を行う。抵抗層が片面だけ設けられた型の２
次元的像位置検出素子に本発明を適用する場合に
は、Ｘ方向およびＹ方向の出力電極の交差が生ず
るので、これら出力電極が交差部において互いに
絶縁される構造とすることが必要とされる。以上
述べたように、本発明を適用することにより、電
源系、信号処理回路、Ａ／Ｄ変換器などの精度は
従来通りのものを使用し、像位置検出分解能をほ
ぼ区分区間数に比例的に高めることが可能とな
り、従来方式の半導体像位置検出素子および像位
置検出素子ではほとんど不可能であつた広い範囲
に亙る高精度像位置検出を実現できる。 FIG. 4 shows an embodiment in which the present invention is applied to a two-dimensional image position detection element, and is a semiconductor image position detection element in which the resistance layers R 1 and R 2 are divided into upper and lower surfaces, and the upper surface Resistance layer R 1 is in the X direction, resistance layer R 2 on the bottom surface
is used to detect the image position in the Y direction. In this embodiment, an example of division into three sections is shown, but it is generally possible to divide into any section. The image position detection method is as follows for each axis of X and Y.
The output electrodes T AX ,
Select T X1 , T X2 , T BX , and T AY , T Y1 , T Y2 , T BY . Type 2 with a resistive layer on only one side
When the present invention is applied to a dimensional image position detection element, since the output electrodes in the X direction and the Y direction intersect, it is necessary to have a structure in which these output electrodes are insulated from each other at the intersection. . As described above, by applying the present invention, the accuracy of the power supply system, signal processing circuit, A/D converter, etc. is the same as before, and the image position detection resolution is approximately proportional to the number of sections. This makes it possible to realize highly accurate image position detection over a wide range, which was almost impossible with conventional semiconductor image position detection elements and image position detection elements.
第１図は、本発明に基づいた半導体像位置検出
素子の断面構造を概念的に示した図、第２図は、
本発明に基づく半導体像位置検出素子を本発明に
基づく像位置検出法に従つて動作させるための信
号処理回路の一構成例を示すブロツク図、第３図
は、本発明に基づいた、半導体像位置検出素子の
別な実施例の断面図、第４図は、本発明による２
次元的像位置検出素子の一実施例を示す斜視図、
第５図は、従来の代表的な半導体位置検出素子
（PDS）の断面構造を概念的に示した図、および
第６図は、従来のPDSにより像位置を検出する
ための信号処理回路のブロツク図。
（符号の説明）、Ｒ……抵抗層、Ｐ……光電膜
層、Ｃ……バイアス膜層、TA，TB，T1，T2…
To，TMA，TMB，TAX，TAY，TBX，TBY，TX1，
TX2，TY1，TY2……出力電極、CB……バイアス電
極、Ｂ……バツフア増幅器、Ａ……演算増幅器、
÷……除算器、SW……出力電極選択回路、SA1，
SA2…SAo，SB1，SB2…SBo……電極選択スイツチ、
Ａ／Ｄ……アナログ・デジタル変換器、IA，IB…
…出力電流。
FIG. 1 is a diagram conceptually showing the cross-sectional structure of a semiconductor image position detection element based on the present invention, and FIG.
FIG. 3 is a block diagram showing an example of the configuration of a signal processing circuit for operating a semiconductor image position detection element based on the present invention in accordance with an image position detection method based on the present invention. A sectional view of another embodiment of the position sensing element, FIG.
A perspective view showing an example of a dimensional image position detection element,
Figure 5 is a diagram conceptually showing the cross-sectional structure of a typical conventional semiconductor position detection element (PDS), and Figure 6 is a block diagram of a signal processing circuit for detecting an image position using the conventional PDS. figure. (Explanation of symbols), R...resistance layer, P...photoelectric film layer, C...bias film layer, T A , T B , T 1 , T 2 ...
T o , T MA , T MB , T AX , T AY , T BX , T BY , T X1 ,
T X2 , T Y1 , T Y2 ... Output electrode, C B ... Bias electrode, B ... Buffer amplifier, A ... Operational amplifier,
÷...Divider, S W ...Output electrode selection circuit, S A1 ,
S A2 ...S Ao , S B1 , S B2 ...S Bo ...electrode selection switch,
A/D...Analog-to-digital converter, I A , I B ...
...Output current.
Claims (1)
像位置検出素子において、像位置検出領域が複数
の区間に区分されており、各区分の境界部に出力
電極が設けられていることを特徴とする半導体像
位置検出素子。 ２ 光電膜層とこの層に重なる抵抗層とを備える
像位置検出素子において、像位置検出領域が複数
の区間に区分されており、各区分の境界部に出力
電極が設けられていることを特徴とする半導体像
位置検出素子を用いる像位置検出法であつて、 前記区分された複数の区間を間に挟む出力電極
により、前記複数の区間より狭い像の存在区間を
先ず定め、次にこの像の存在区間の両端に設けら
れている出力電極によりこの存在区間内の像位置
を検出し、前記先ず定められた像の存在区間とか
ら像位置を確定する像位置検出法。 ３ 前記先ず定められる像の存在区間が、前記区
分された複数の区間の一つであることを特徴とす
る特許請求の範囲第２項記載の像位置検出法。 ４ 前記先ず定められる像の存在区間が、前記区
分された複数の区間の隣接する二つであることを
特徴とする特許請求の範囲第２項記載の像位置検
出法。[Claims] 1. In an image position detection element comprising a photoelectric film layer and a resistive layer overlapping this layer, the image position detection area is divided into a plurality of sections, and an output electrode is provided at the boundary of each section. A semiconductor image position detection element characterized in that: 2. An image position detection element comprising a photoelectric film layer and a resistive layer overlapping this layer, characterized in that the image position detection area is divided into a plurality of sections, and an output electrode is provided at the boundary of each section. An image position detection method using a semiconductor image position detection element, which first determines an area in which an image exists that is narrower than the plurality of sections by output electrodes sandwiching the plurality of sections, and then An image position detection method in which the image position within the existing area is detected by output electrodes provided at both ends of the existing area, and the image position is determined from the first determined image existing area. 3. The image position detection method according to claim 2, wherein the first determined image existence section is one of the plurality of divided sections. 4. The image position detection method according to claim 2, wherein the image existing sections that are determined first are two adjacent sections of the plurality of divided sections.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62165969A JPS6410108A (en) | 1987-07-02 | 1987-07-02 | Constitution of semiconductor image position detecting element and image position detecting method |
| US07/320,305 US4961096A (en) | 1987-07-02 | 1988-07-01 | Semiconductor image position sensitive device with primary and intermediate electrodes |
| PCT/JP1988/000662 WO1993014376A1 (en) | 1987-07-02 | 1988-07-01 | Structure of semiconductor element for detecting image position and method of detecting image position |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62165969A JPS6410108A (en) | 1987-07-02 | 1987-07-02 | Constitution of semiconductor image position detecting element and image position detecting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6410108A JPS6410108A (en) | 1989-01-13 |
| JPH0474645B2 true JPH0474645B2 (en) | 1992-11-26 |
Family
ID=15822446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62165969A Granted JPS6410108A (en) | 1987-07-02 | 1987-07-02 | Constitution of semiconductor image position detecting element and image position detecting method |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS6410108A (en) |
| WO (1) | WO1993014376A1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0621764B2 (en) * | 1987-10-14 | 1994-03-23 | 理化学研究所 | Control method of semiconductor position detecting device having plural sets of output electrodes |
| JPH0342503A (en) * | 1989-07-10 | 1991-02-22 | Hamamatsu Photonics Kk | Light incidence position detector |
| JPH0555010U (en) * | 1991-12-26 | 1993-07-23 | 三洋電機株式会社 | Semiconductor optical position detector |
| DE4413481C2 (en) * | 1994-04-19 | 1999-12-16 | Vishay Semiconductor Gmbh | Optoelectronic component |
| JP2001208537A (en) * | 2000-01-28 | 2001-08-03 | Mitsubishi Electric Corp | Position detection circuit |
| WO2006011674A1 (en) | 2004-07-30 | 2006-02-02 | Matsushita Electric Works, Ltd. | Image processing device |
| AT508438B1 (en) * | 2009-04-16 | 2013-10-15 | Isiqiri Interface Tech Gmbh | DISPLAY AREA AND A COMBINED CONTROL DEVICE FOR A DATA PROCESSING SYSTEM |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5714704A (en) * | 1980-07-01 | 1982-01-26 | Rikagaku Kenkyusho | Signal processing system for semiconductor position detecting sensor |
| JPS58151507A (en) * | 1982-03-05 | 1983-09-08 | Anritsu Corp | Photodiode for position detection |
| JPS5956778A (en) * | 1982-09-27 | 1984-04-02 | Toshiba Corp | Position detector for semiconductor device |
-
1987
- 1987-07-02 JP JP62165969A patent/JPS6410108A/en active Granted
-
1988
- 1988-07-01 WO PCT/JP1988/000662 patent/WO1993014376A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO1993014376A1 (en) | 1993-07-22 |
| JPS6410108A (en) | 1989-01-13 |
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