JPH0477403B2 - - Google Patents
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- Publication number
- JPH0477403B2 JPH0477403B2 JP33225587A JP33225587A JPH0477403B2 JP H0477403 B2 JPH0477403 B2 JP H0477403B2 JP 33225587 A JP33225587 A JP 33225587A JP 33225587 A JP33225587 A JP 33225587A JP H0477403 B2 JPH0477403 B2 JP H0477403B2
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- JP
- Japan
- Prior art keywords
- weight
- parts
- powder
- fired
- tio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000919 ceramic Substances 0.000 claims description 15
- 239000000843 powder Substances 0.000 claims description 14
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001845 chromium compounds Chemical class 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000005397 methacrylic acid ester group Chemical group 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- SJLOMQIUPFZJAN-UHFFFAOYSA-N oxorhodium Chemical compound [Rh]=O SJLOMQIUPFZJAN-UHFFFAOYSA-N 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003284 rhodium compounds Chemical class 0.000 description 1
- 229910003450 rhodium oxide Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- -1 titanium alkoxides Chemical class 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Ceramic Products (AREA)
- Conductive Materials (AREA)
Description
イ 発明の目的
産業上の利用分野
本発明はセラミツクス多層回路基板、特に低温
焼成可能なセラミツクの多層配線基板に関する。
従来の技術
従来、一般的にはＷ又はMoを導体とするアル
ミナ系の高温焼成多層基板では、アルミナの誘電
率高く、導通抵抗も高いため、信号伝播遅延時間
も長くなりコンピユター等の高速化、高性能の障
害となつている。
このため、高温焼成多層基板に代わるものとし
て低融点ガラスにアルミナを添加したセラミツ
ク、結晶化ガラスセラミツク等を基板材料とし
て、Ag、Cu、Ag−Pd等の抵抗金属を導体とし、
これ等を多層に積層した低温焼成セラミツク多層
基板の開発が進められている。
発明が解決しようとする問題点
800〜1000℃で焼成可能な低温焼成基板に、Ag
−Pd系導体を表面用導体として同時焼成時によ
り形成される場合、その導体の特性として重要な
要因は半田に良く漏れる事接着強度が強い事
の２点である。しかし、低温焼成基板上へ従来の
混成集積回路（HIC）用Ag、Pdペーストを用い
たメタライズ法では、ペースト中の強度向上用と
して添加しているガラスフリツト成分が多く、半
田に濡れない欠点が出る。又このフリツト成分を
除くと接着強度が劣化する。本発明者等は特願昭
61−138715に示されるように、導体の周辺を絶縁
性セラミツクスで被覆する方法を提案している。
しかし導体のフアインライン化、高密度化ができ
にくくなる欠点を有していた。
問題点を解決するための手段
本発明は、800〜1000℃で焼成可能な低温焼成
セラミツク多層回路基板において、グリーンシー
ト上にAgとPdの合計を100重量部とし、Ag：70
〜95重量部、Pd：５〜30重量部にCr0.01〜8.0重
量部及びTiO2とRhをそれぞれ下記式の範囲内の
Ｘ、Ｙの各重量部
−0.5X＋1.0≧Ｙ≧−0.1X＋0.01、Ｘ≧０、Ｙ≧
０
（但し、ＸはTiO2重量部、ＹはRh重量部を表
す）の各粉末と有機ビヒクル成分よりなる導体ペ
ーストを被覆し、焼成してなることを特徴とする
セラミツク多層回路基板である。
具体的には酸化チタンならば0.1〜2.0重量部、
ロジウムならば0.01〜1.0重量部を結んだ線内
（第１図の斜線部分）の重量部にCrを0.01重量部
以上８重量部以下加えた粉末を有機ビヒクル中に
分散混合させ作成したペーストを被覆し、必要に
応じて所定枚数積層し同時焼成を行つて作製され
ることを特徴としているセラミツク多層回路基板
である。
本発明に用いる低温焼成セラミツクとはSiO2
−B2O3系からPbO−SiO2−Al2O3−B2O3系ガラ
ス、CaO−SiO2−Al2O3−B2O3系ガラス等に
Al2O3、SiO2等の骨剤成分を加えたガラス−セラ
ミツク複合系やMgO−Al2O3−SiO2系結晶化ガ
ラスなどである。
又、前記のセラミツク粉末をグリーンシートと
する方法は、前記粉末と有機バインダーは、例え
ばポリビニールブチラール、メタクリル酸エステ
ル樹脂等と、可塑剤は、例えばジブチルフタレー
ト等と、又溶剤は、例えばエチルアルコール、プ
ロピルアルコール、トルエン等とをボールミル内
で混合しスラリーとしドクターブレード法にてグ
リーンシートとする方法が利用できる。
又、AgとPdの粒子径は共に平均粒子径0.01〜
10μｍ程度のものが利用できる。TiO2成分として
は平均粒子径0.1〜10μｍ酸化チタン粉の外、焼成
することによつてTiO2となるチタンレジネート、
チタンアルコキシド等の有機チタン化合物及び金
属チタンでもよい。ロジウム成分は、ロジウム粉
の外、酸化ロジウム、ロジウムレジネート等の有
機ロジウム化合物等も使用できる。クロム成分は
同じく金属クロム粉、酸化クロム粉、クロムレジ
ネート等の有機クロム化合物が使用可能である。
Agは導通成分の主体をなすものであり、低導
通抵抗を有している。PdはAgのエレクトロマイ
グレーシヨンを抑える目的に５重量部以上用いら
れる。しかし導通抵抗が高い為30重量部以下が好
ましい添加量範囲である。TiO2及びRhは接着強
度の改善に用いられ、使用量が少ないとその効果
が小さい。一方その量が多い場合、半田濡れ性が
劣化する。その範囲は第１図斜線の範囲内であ
る。Crは半田濡れ性の改良に用いられるがその
効果が表れるのは0.01〜８重量部の範囲である。
導電ペーストは上記の粉末を有機ビヒクルと共
に３本ロールでよく混合して作製される。有機ビ
ヒクルはエチルセルローズやアクリル樹脂をテレ
ピネオール、ブチルカルビトールアセテート、ブ
チルカルビトール等の溶剤で溶解させた溶液が用
いられる。
こうして得られたベーストは、セラミツクグリ
ーンシート上にスクリーン印刷され、必要により
積層され次いで800〜1000℃に焼成される。この
場合必要に応じRuO2ペースト等による抵抗回路
やBaTiO3ペースト等によるコンデンサー回路を
同時に形成しても良い。
実施例
低温焼成セラミツク基板は第１表に示した組成
のガラスと平均粒径0.6μｍのアルミナ粉を混合し
た組成を用いた。
セラミツクグリーンシートは上記粉末と重量比
でアクリル樹脂10％、トルエン30％、イソプロピ
B. Object of the Invention Industrial Application Field The present invention relates to a ceramic multilayer circuit board, and particularly to a ceramic multilayer wiring board that can be fired at low temperatures. Conventional technology Conventionally, in general, alumina-based high-temperature fired multilayer substrates using W or Mo as conductors have a high dielectric constant and a high conduction resistance, so the signal propagation delay time becomes long, making it possible to increase the speed of computers, etc. It has become an obstacle to high performance. Therefore, as an alternative to high-temperature fired multilayer substrates, ceramics made by adding alumina to low-melting glass, crystallized glass ceramics, etc. are used as substrate materials, and resistive metals such as Ag, Cu, Ag-Pd, etc. are used as conductors.
Development of low-temperature firing ceramic multilayer substrates in which these materials are laminated in multiple layers is underway. Problems to be solved by the invention Ag
- When a Pd-based conductor is used as a surface conductor and is formed by simultaneous firing, the two important characteristics of the conductor are good leakage to solder and strong adhesive strength. However, in the metallization method using conventional Ag and Pd paste for hybrid integrated circuits (HIC) on low-temperature fired substrates, there is a large amount of glass frit component added to the paste to improve strength, resulting in the disadvantage that it cannot be wetted by solder. . Also, if this frit component is removed, the adhesive strength will deteriorate. The inventors of the present patent application
61-138715, proposes a method of covering the periphery of a conductor with insulating ceramics.
However, it has the drawback that it is difficult to make the conductor fine-line and increase its density. Means for Solving the Problems The present invention provides a low-temperature fired ceramic multilayer circuit board that can be fired at 800 to 1000°C, in which the total of Ag and Pd is 100 parts by weight on a green sheet, and Ag: 70 parts by weight.
~95 parts by weight, Pd: 5 to 30 parts by weight, 0.01 to 8.0 parts by weight of Cr, TiO 2 and Rh, each part by weight of X and Y within the range of the following formula -0.5X + 1.0≧Y≧-0.1 X+0.01, X≧0, Y≧
0 (where X represents 2 parts by weight of TiO and Y represents parts by weight of Rh) and an organic vehicle component, and is coated with a conductive paste and fired. Specifically, if it is titanium oxide, it is 0.1 to 2.0 parts by weight.
In the case of rhodium, a paste made by dispersing and mixing powder in which 0.01 parts by weight to 8 parts by weight of Cr is added to the parts by weight within the line connecting 0.01 to 1.0 parts by weight (shaded area in Figure 1) is used. This ceramic multilayer circuit board is characterized in that it is manufactured by coating, laminating a predetermined number of sheets as necessary, and firing them simultaneously. The low-temperature fired ceramic used in the present invention is SiO 2
-B 2 O 3 series glass to PbO-SiO 2 -Al 2 O 3 -B 2 O 3 series glass, CaO-SiO 2 -Al 2 O 3 -B 2 O 3 series glass, etc.
These include glass-ceramic composites containing aggregate components such as Al 2 O 3 and SiO 2 and MgO-Al 2 O 3 -SiO 2- based crystallized glass. Further, in the method of making the ceramic powder into a green sheet, the powder and organic binder are, for example, polyvinyl butyral, methacrylic acid ester resin, etc., the plasticizer is, for example, dibutyl phthalate, and the solvent is, for example, ethyl alcohol. , propyl alcohol, toluene, etc. can be mixed in a ball mill to form a slurry, and a green sheet can be formed using a doctor blade method. In addition, the average particle size of both Ag and Pd is 0.01~
A material of about 10 μm can be used. The two TiO components include titanium oxide powder with an average particle size of 0.1 to 10 μm, as well as titanium resinate, which becomes TiO 2 by firing.
Organic titanium compounds such as titanium alkoxides and metallic titanium may also be used. As the rhodium component, in addition to rhodium powder, organic rhodium compounds such as rhodium oxide and rhodium resinate can also be used. Similarly, organic chromium compounds such as metallic chromium powder, chromium oxide powder, and chromium resinate can be used as the chromium component. Ag is the main conductive component and has low conductive resistance. Pd is used in an amount of 5 parts by weight or more for the purpose of suppressing electromigration of Ag. However, since the conduction resistance is high, the preferred addition amount range is 30 parts by weight or less. TiO 2 and Rh are used to improve adhesive strength, and if the amount used is small, the effect will be small. On the other hand, if the amount is large, solder wettability deteriorates. The range is within the shaded range in FIG. Cr is used to improve solder wettability, but its effect becomes apparent in the range of 0.01 to 8 parts by weight. The conductive paste is prepared by thoroughly mixing the above powder with an organic vehicle in a three-roller. The organic vehicle used is a solution in which ethyl cellulose or acrylic resin is dissolved in a solvent such as terpineol, butyl carbitol acetate, butyl carbitol, or the like. The base thus obtained is screen printed on a ceramic green sheet, laminated if necessary, and then fired at 800-1000°C. In this case, if necessary, a resistor circuit using RuO 2 paste or the like or a capacitor circuit using BaTiO 3 paste or the like may be formed at the same time. Example A low-temperature fired ceramic substrate was made of a mixture of glass having the composition shown in Table 1 and alumina powder having an average particle size of 0.6 μm. Ceramic green sheet contains 10% acrylic resin, 30% toluene, and isopropylene in the weight ratio of the above powder.
【表】
ルアルコール10％及びジブチルフタレート５％を
ボールミルで混合しドクターブレード法にて膜厚
0.4mmのグリーンシートを作製した。次いで粒径
0.1μｍのAg粉、0.8μｍのPd粉、0.1μｍのTiO2粉、
0.01μｍのRh粉、2μｍのCr粉を用いて第２表に示
した割合でエチルセルローズをテレピネオールに
溶解したビヒクル中に３本ロールにて混合しペー
スト化した。次いでグリーンシート上に導体ペー
ストをスクリーン印刷法で印刷し、さらにグリー
ンシート２枚を重ね合わせ加熱圧着した後、900
℃で焼成した。
焼成した基板はロジン入りフラツクス中に浸漬
し、230℃で２％入りSn−Pb共晶半田に浸漬し、
半田濡れ性を評価した。90％以上半田で濡れてい
る場合は優とし、それ以下を劣とした。
接着強度は、２mm□のパツド上に0.6mmφのSn
めつき軟銅線を半田付けし150℃の恒温槽中に[Table] 10% alcohol and 5% dibutyl phthalate were mixed in a ball mill and the film thickness was measured using the doctor blade method.
A 0.4 mm green sheet was produced. Then particle size
0.1μm Ag powder, 0.8μm Pd powder, 0.1μm TiO2 powder,
Rh powder of 0.01 μm and Cr powder of 2 μm were mixed in a vehicle containing ethyl cellulose in terpineol in the proportions shown in Table 2 using three rolls to form a paste. Next, a conductive paste was printed on the green sheet using a screen printing method, and then the two green sheets were superimposed and bonded under heat.
Calcined at ℃. The fired board was immersed in rosin-containing flux, and then immersed in 2% Sn-Pb eutectic solder at 230℃.
Solder wettability was evaluated. If it was 90% or more wet with solder, it was rated as excellent, and if it was less than that, it was rated as poor. The adhesive strength is 0.6mmφ Sn on a 2mm□ pad.
Solder the plated annealed copper wire and place it in a constant temperature oven at 150℃.
【表】
(注) ＊及び〓について
実施例のテストNo.２、５はテープ２の組成で、
その外はテープ１の組成
実施例テストNo.７のRhの0.1はRhレジネートを
使用した。
48時間放置後ピール法で測定した。その結果を
第２表に示す。
実施例１〜13は優れた半田濡れ性で接着強度
2.3Kg以上で強い値を示した。比較例１はTiO2や
Rhが含有されていないため接着強度は弱く、又
Crが含まれていないため半田濡れ性が悪い。比
較例２、３はTiO2とRhが過剰に含有されている
例で、共に半田濡れ性が悪いことが示されてい
る。比較例４はCr成分が過剰な場合で半田濡れ
性が悪くなつている。
ハ 発明の効果
本発明によれば接着強度が強くかつ半田濡れ性
に優れ、さらに高密度フアインパターン化が可能
な低温焼成セラミツク多層基板を得ることができ
る。[Table] (Note) Regarding * and 〓 Test Nos. 2 and 5 of the example are the composition of tape 2,
Other than that, the composition of Tape 1 was as follows: Rh resinate was used for Rh of 0.1 in Example Test No. 7. It was measured by the peel method after being left for 48 hours. The results are shown in Table 2. Examples 1 to 13 have excellent solder wettability and adhesive strength.
It showed a strong value above 2.3Kg. Comparative example 1 is TiO 2 and
Adhesive strength is weak because it does not contain Rh.
Poor solderability because it does not contain Cr. Comparative Examples 2 and 3 are examples in which TiO 2 and Rh are contained in excess, and both exhibit poor solder wettability. In Comparative Example 4, the solder wettability deteriorated due to excessive Cr content. C. Effects of the Invention According to the present invention, it is possible to obtain a low-temperature fired ceramic multilayer substrate which has strong adhesive strength, excellent solder wettability, and can be formed into a high-density fine pattern.
第１図は本発明のRhとTiO2の特許請求の範囲
を図示したもので、斜線が該当する。
FIG. 1 illustrates the claims of Rh and TiO 2 of the present invention, and the hatched area corresponds to the claims.
Claims (1)
ク多層回路基板において、グリーンシート上に、
AgとPdの合計を100重量部とし、Ag70〜95重量
部、Pd5〜30重量部にCr0.01〜8.0重量部、及び
TiO2とRhがそれぞれ下記式の範囲内のＸ、Ｙの
各重量部 −0.5X＋1.0≧Ｙ≧−0.1X＋0.01、Ｘ≧０、Ｙ≧
０ （但し、ＸはTiO2重量部、ＹはRh重量部を表
す）の各粉末と有機ビヒクル成分よりなる導体ペ
ーストを被覆し焼成してなることを特徴とするセ
ラミツク多層回路基板。[Claims] 1. In a low-temperature fired ceramic multilayer circuit board that can be fired at 800 to 1000°C, on a green sheet,
The total of Ag and Pd is 100 parts by weight, 70 to 95 parts by weight of Ag, 5 to 30 parts by weight of Pd, 0.01 to 8.0 parts by weight of Cr, and
TiO 2 and Rh are each weight part of X and Y within the range of the following formula -0.5X+1.0≧Y≧-0.1X+0.01, X≧0, Y≧
1. A ceramic multilayer circuit board, characterized in that it is coated with a conductive paste made of powders of 0 (where X represents 2 parts by weight of TiO and Y represents parts by weight of Rh) and an organic vehicle component and is then fired.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33225587A JPH01173504A (en) | 1987-12-27 | 1987-12-27 | Ceramic multi-layer circuit substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33225587A JPH01173504A (en) | 1987-12-27 | 1987-12-27 | Ceramic multi-layer circuit substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01173504A JPH01173504A (en) | 1989-07-10 |
| JPH0477403B2 true JPH0477403B2 (en) | 1992-12-08 |
Family
ID=18252905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33225587A Granted JPH01173504A (en) | 1987-12-27 | 1987-12-27 | Ceramic multi-layer circuit substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01173504A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07176209A (en) * | 1993-10-29 | 1995-07-14 | Nec Corp | Conductive paste, and layered ceramic capacitor and its manufacture |
-
1987
- 1987-12-27 JP JP33225587A patent/JPH01173504A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01173504A (en) | 1989-07-10 |
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