JPH0478007B2 - - Google Patents
Info
- Publication number
- JPH0478007B2 JPH0478007B2 JP57164012A JP16401282A JPH0478007B2 JP H0478007 B2 JPH0478007 B2 JP H0478007B2 JP 57164012 A JP57164012 A JP 57164012A JP 16401282 A JP16401282 A JP 16401282A JP H0478007 B2 JPH0478007 B2 JP H0478007B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- compound semiconductor
- anode
- alkaline solution
- insb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
Landscapes
- Formation Of Insulating Films (AREA)
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
この発明は化合物半導体の陽極酸化方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Technical field to which the invention pertains] This invention relates to a method for anodizing compound semiconductors.
従来InSb等の化合物半導体ウエハを陽極酸化
する時、陽極側の配線にAu線等の良導体が、ま
た陰極にPt板が用いられている。しかしながら、
Au線を陽極酸化溶液、例えば0.1N KOHに浸し
た状態で陽極酸化を行うと、Au線とPt板間に電
流が流れ、InSbが陽極酸化されないという欠点
があつた。その解決法として第１図に示すような
真空チヤツクを用いた陽極酸化装置によつて陽極
酸化溶液に陽極金属を浸さない陽極酸化法が考え
られた。尚本図において１は銅線、２は白金板、
３は金線、４はテフロン製ウエハチヤツク、５は
InSbウエハ、６は0.1N KOH水溶液、７はガラ
ス容器、８はＯ−リングを各々示す。しかし、こ
の方法では真空チヤツクの大きさで陽極酸化され
るInSbウエハの大きさが制限され、また真空チ
ヤツクの強さで薄いウエハが割れる等の欠点に加
え、装置が大がかりになるという問題点があつ
た。
Conventionally, when anodizing a compound semiconductor wafer such as InSb, a good conductor such as Au wire is used for the wiring on the anode side, and a Pt plate is used for the cathode. however,
When anodizing the Au wire while immersing it in an anodizing solution, such as 0.1N KOH, a current flows between the Au wire and the Pt plate, resulting in the InSb not being anodized. As a solution to this problem, an anodic oxidation method using an anodic oxidation apparatus using a vacuum chuck as shown in FIG. 1 was considered, in which the anode metal is not immersed in an anodic oxidation solution. In this figure, 1 is a copper wire, 2 is a platinum plate,
3 is gold wire, 4 is Teflon wafer jacket, 5 is
InSb wafer, 6 a 0.1N KOH aqueous solution, 7 a glass container, and 8 an O-ring. However, with this method, the size of the InSb wafer to be anodized is limited by the size of the vacuum chuck, and the strength of the vacuum chuck can cause thin wafers to crack, as well as the problem that the equipment becomes large-scale. It was hot.
この発明は上述した従来の陽極酸化法の欠点を
改良したもので容易に行うことのできる陽極酸化
法を提供することを目的とする。
The object of the present invention is to provide an anodic oxidation method which improves the drawbacks of the conventional anodic oxidation method described above and which can be easily carried out.
本発明は、液体を収容可能な容器と、この容器
に収容されたアルカリ溶液と、このアルカリ溶液
中で化合物半導体のウエハを固定する治具と、こ
の治具に沿つて形成され前記化合物半導体のウエ
ハに前記アルカリ溶液中で接触する陽極と、前記
アルカリ溶液に接触する陰極とを備え、前記陽極
がTaから成ることを特徴とする化合物半導体の
陽極酸化装置を提供するものである。
The present invention provides a container capable of containing a liquid, an alkaline solution contained in the container, a jig for fixing a compound semiconductor wafer in the alkaline solution, and a jig formed along the jig for fixing the compound semiconductor wafer. The present invention provides an anodizing device for a compound semiconductor, comprising an anode that contacts the wafer in the alkaline solution, and a cathode that contacts the alkaline solution, and the anode is made of Ta.
本発明による陽極酸化装置によれば、陽極に
Taを選ぶことによつて、Au等を陽極に使用した
装置では従来不可能とされた方法つまり、ウエハ
と陽極をアルカリ溶液中で接触させた状態でウエ
ハの表面を陽極酸化することが可能になつた。ま
た、真空チヤツクを使用した陽極酸化法では、ウ
エハの大きさに制限があるが本発明では、ウエハ
の大きさに制限はなく、さらに同時に複数のウエ
ハを陽極酸化することが可能である。
According to the anodizing device according to the present invention, the anode
By selecting Ta, it is now possible to anodize the surface of the wafer using a method that was previously impossible with equipment using Au or other materials as the anode, that is, with the wafer and anode in contact with each other in an alkaline solution. Summer. Further, in the anodizing method using a vacuum chuck, there is a limit to the size of the wafer, but in the present invention, there is no limit to the size of the wafer, and furthermore, it is possible to anodize a plurality of wafers at the same time.
本発明における陽極酸化の一実施例を第２図を
用いて説明する。テフロン製のウエハホルダー１
０に直径100μｍのTa線９を図示のように組み込
み、ウエハ５とTa線９が接触するようにする。
0.1N KOH水溶液６に上記テフロン製ウエハホ
ルダー１０を挿入しInSbウエハ５を装着する。
Pt板２を陰極、Ta線９を陽極として電流制限の
ある定電圧電源に接続し、制限電流を６Ａ、定電
圧を20Vに設定する。
An embodiment of anodic oxidation according to the present invention will be described with reference to FIG. Teflon wafer holder 1
A Ta wire 9 having a diameter of 100 μm is inserted into the wafer 0 as shown in the figure, so that the wafer 5 and the Ta wire 9 are in contact with each other.
The Teflon wafer holder 10 is inserted into a 0.1N KOH aqueous solution 6, and the InSb wafer 5 is mounted thereon.
Connect the Pt plate 2 as a cathode and the Ta wire 9 as an anode to a constant voltage power supply with a current limit, and set the limit current to 6 A and the constant voltage to 20 V.
このようにして陽極酸化を行うと、まず初期状
態では陽極のTa電極９の電流密度が高くなり、
Ta電極が陽極酸化される。その結果Ta電極の抵
抗は高くなり、InSbウエハ５の方が電流密度が
高くなり、InSbウエハ５が陽極酸化される。 When anodic oxidation is performed in this way, the current density of the anode Ta electrode 9 becomes high in the initial state,
Ta electrode is anodized. As a result, the resistance of the Ta electrode becomes higher, the current density becomes higher in the InSb wafer 5, and the InSb wafer 5 is anodized.
尚第２図において１は銅線、７はガラス容器を
示す。 In FIG. 2, 1 indicates a copper wire and 7 indicates a glass container.
本実施例における表面積12cm2のＰ型InSbを陽
極酸化したところ、第３図のような電流密度の経
時変化が得られ、５分後の酸化膜は1200〓であつ
た。 When P-type InSb having a surface area of 12 cm 2 was anodized in this example, the current density changed over time as shown in FIG. 3, and the oxide film after 5 minutes had a density of 1200.
前述の説明では陽極金属電極と陽極酸化する物
質を接触させるとしたが、この接触をしつかりす
れば両者の間に絶縁層が形成されることはない。 In the above description, the anode metal electrode and the substance to be anodized are brought into contact with each other, but if this contact is maintained, no insulating layer will be formed between the two.
第１図は従来の陽極酸化法を説明するための
図、第２図は本発明に係る陽極酸化法の一実施例
を説明するための図、第３図は本発明の方法で陽
極酸化を行つた時の電流密度の経時変化を示す図
である。
１……銅線、２……白金板、３……金線、４…
…テフロン製ウエハチヤツク、５……InSbウエ
ハ、６……0.1N KOH水溶液、７……ガラスビ
ーカー、８……Ｏ−リング、９……タンタル線、
１０……テフロン製治具。
Fig. 1 is a diagram for explaining a conventional anodic oxidation method, Fig. 2 is a diagram for explaining an embodiment of the anodization method according to the present invention, and Fig. 3 is a diagram for explaining an anodization method according to the present invention. FIG. 3 is a diagram showing changes in current density over time during the test. 1...Copper wire, 2...Platinum plate, 3...Gold wire, 4...
... Teflon wafer jacket, 5 ... InSb wafer, 6 ... 0.1N KOH aqueous solution, 7 ... glass beaker, 8 ... O-ring, 9 ... tantalum wire,
10...Teflon jig.
Claims (1)
れたアルカリ溶液と、このアルカリ溶液中で化合
物半導体のウエハを固定する溝を有する治具と、
この治具の溝に沿つて形成され前記化合物半導体
のウエハに前記アルカリ溶液中で接触する陽極
と、前記アルカリ溶液に接触する陰極とを備え、
前記陽極がTaから成ることを特徴とする化合物
半導体の陽極酸化装置。 ２ 前記化合物半導体のウエハはInSbであるこ
とを特徴とする特許請求の範囲第１項記載の化合
物半導体の陽極酸化装置。[Claims] 1. A container capable of containing a liquid, an alkaline solution contained in the container, and a jig having a groove for fixing a compound semiconductor wafer in the alkaline solution.
The jig includes an anode formed along the groove and in contact with the compound semiconductor wafer in the alkaline solution, and a cathode in contact with the alkaline solution,
An anodizing device for a compound semiconductor, characterized in that the anode is made of Ta. 2. The compound semiconductor anodizing apparatus according to claim 1, wherein the compound semiconductor wafer is InSb.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57164012A JPS5954228A (en) | 1982-09-22 | 1982-09-22 | Anodic oxidation method for compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57164012A JPS5954228A (en) | 1982-09-22 | 1982-09-22 | Anodic oxidation method for compound semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5954228A JPS5954228A (en) | 1984-03-29 |
| JPH0478007B2 true JPH0478007B2 (en) | 1992-12-10 |
Family
ID=15785092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57164012A Granted JPS5954228A (en) | 1982-09-22 | 1982-09-22 | Anodic oxidation method for compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5954228A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH084087B2 (en) * | 1987-03-30 | 1996-01-17 | 工業技術院長 | InSb element manufacturing method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3176025D1 (en) * | 1980-08-04 | 1987-04-23 | Santa Barbara Res Center | Metallic contacts to compound semiconductor devices |
-
1982
- 1982-09-22 JP JP57164012A patent/JPS5954228A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5954228A (en) | 1984-03-29 |
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