JPH0478041B2 - - Google Patents
Info
- Publication number
- JPH0478041B2 JPH0478041B2 JP57213403A JP21340382A JPH0478041B2 JP H0478041 B2 JPH0478041 B2 JP H0478041B2 JP 57213403 A JP57213403 A JP 57213403A JP 21340382 A JP21340382 A JP 21340382A JP H0478041 B2 JPH0478041 B2 JP H0478041B2
- Authority
- JP
- Japan
- Prior art keywords
- filter
- attenuation
- hole
- dielectric
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/205—Comb or interdigital filters; Cascaded coaxial cavities
- H01P1/2056—Comb filters or interdigital filters with metallised resonator holes in a dielectric block
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Description
【発明の詳細な説明】
(1) 発明の技術分野
本発明はVHF帯及びUHF帯の無線装置に用い
られる誘電体フイルタに関するものである。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a dielectric filter used in VHF band and UHF band radio equipment.
(2) 技術の背景
一般に、移動無線と呼ばれる携帯無線や車載無
線装置に用いられるフイルタは小型、軽量かつ温
度変化に対する影響の少いものが要求される。こ
のため、最近、これらの装置には、ヘリカルフイ
ルタ等に比べて小型、軽量かつ温度変化の少い誘
電体フイルタが多用されている。(2) Background of the technology In general, filters used in portable radios called mobile radios and in-vehicle radio equipment are required to be small, lightweight, and less affected by temperature changes. For this reason, recently, dielectric filters, which are smaller, lighter, and less subject to temperature changes than helical filters and the like, are often used in these devices.
この種の誘電体フイルタは、一般に、底面及び
側面をメタライズして外部導体膜を設けた直方体
状の誘電体ブロツクに、上下方向に軸線を有し内
面をメタライズして内部導体膜を有する複数個の
貫通孔を設け、更に両端に位置する貫通孔の外側
に外部回路と接続するための結合部を設けて、バ
ンド・パス・フイルタ(以下、BPFと呼ぶ)と
して構成されている。また、この種の誘電体フイ
ルタは、貫通孔の個数を増加、すなわち共振子の
段数を増加すれば減衰帯域の減衰料を増大するこ
とができるが、その反面誘電体ブロツクが大形化
される。また、一般にフイルタに要求される減衰
量は非対称な場合が多い。すなわち通過帯域に対
し高帯域又は低帯域のいずれか一方、例えば高帯
域における特定の限定帯域を所定減衰量以上に減
衰する必要があり、低帯域はそれほど減衰する必
要がない場合がある。勿論、この逆の場合もあ
る。このような場合、単に貫通孔の数を増加する
のみで上記の必要条件を満たすのでなく、貫通孔
の個数を必要最小限にとどめ、しかも上記のよう
な要求を満たすことができ得る誘電体フイルタが
望まれる。 This type of dielectric filter generally consists of a rectangular parallelepiped-shaped dielectric block whose bottom and side surfaces are metallized and provided with an outer conductor film, and a plurality of rectangular parallelepiped dielectric blocks each having an axis in the vertical direction and whose inner surface is metallized and provided with an inner conductor film. It is configured as a band pass filter (hereinafter referred to as BPF) by providing a through hole and further providing a coupling part for connecting to an external circuit on the outside of the through hole located at both ends. In addition, in this type of dielectric filter, the attenuation charge in the attenuation band can be increased by increasing the number of through holes, that is, by increasing the number of resonator stages, but on the other hand, the dielectric block becomes larger. . Furthermore, the amount of attenuation generally required of a filter is often asymmetrical. That is, with respect to the passband, either the high band or the low band, for example, a specific limited band in the high band, needs to be attenuated by a predetermined attenuation amount or more, and the low band may not need to be attenuated so much. Of course, the opposite may also be the case. In such cases, instead of simply increasing the number of through holes to meet the above requirements, it is necessary to create a dielectric filter that can minimize the number of through holes and meet the above requirements. is desired.
(3) 従来技術の問題点
第1図と第2図は従来の誘電体フイルタを説明
するための図であり、第1図は一部切欠き斜視
図、第2図は第1図のA−A′線における断面図
を示す。両図において、符号10は誘電体フイル
タ全体を示し、11は誘電体ブロツク、12は筐
体をそれぞれ示す。誘電体ブロツク11には、複
数個の貫通孔13が設けられ、これらの貫通孔1
3の内面に厚膜焼成等の手法によりメタライズし
て内部導体膜13a(図中、クロスハツチングで
示す)が形成され、また、誘電体ブロツク11の
底面及び側面も同様にメタライズして外部導体1
1aが形成されている。この誘電体ブロツク11
が、入出力コネクタ14,15及び周波数調整ね
じ16を有する筐体12に収容されて、誘電体フ
イルタ10が形成されている。また、この場合
は、貫通孔13が4個設けられているので4段構
成のフイルタが形成されている。そして、誘電体
11に設けられた貫通孔13は、一端(この場
合、上端)が開放され、他端が外部導体膜11a
に短絡されているので、孔の深さ(又は、孔の高
さ)を1/4波長(λ/4)近傍とする周波数で共
振する共振素子として形成される。これに結合部
として適当な励振体17を用い、入出力コネクタ
14,15を介して外部回路と接続すると、
BPF型の誘電体フイルタとして動作する。図中、
励振体17はブロツク11の両端部に設けられメ
タライズされていない穴18に嵌入された金属棒
で形成され、該金属棒17と導体膜13aを有す
る貫通孔13とが結合される。(3) Problems with the prior art Figures 1 and 2 are diagrams for explaining a conventional dielectric filter, with Figure 1 being a partially cutaway perspective view, and Figure 2 being A of Figure 1. A cross-sectional view taken along the −A′ line is shown. In both figures, reference numeral 10 indicates the entire dielectric filter, 11 indicates a dielectric block, and 12 indicates a housing. A plurality of through holes 13 are provided in the dielectric block 11, and these through holes 1
An inner conductor film 13a (indicated by crosshatching in the figure) is formed on the inner surface of the dielectric block 11 by metallization using a method such as thick film firing, and the bottom and side surfaces of the dielectric block 11 are similarly metalized to form an outer conductor film 13a. 1
1a is formed. This dielectric block 11
is housed in a housing 12 having input/output connectors 14 and 15 and a frequency adjustment screw 16, thereby forming a dielectric filter 10. Further, in this case, since four through holes 13 are provided, a four-stage filter is formed. The through hole 13 provided in the dielectric 11 is open at one end (in this case, the upper end), and the other end is opened at the outer conductor film 11a.
Since the hole is short-circuited, it is formed as a resonant element that resonates at a frequency where the depth of the hole (or the height of the hole) is around 1/4 wavelength (λ/4). If a suitable excitation body 17 is used as a coupling part and connected to an external circuit via input/output connectors 14 and 15,
Operates as a BPF type dielectric filter. In the figure,
The excitation body 17 is formed of a metal rod fitted into a non-metalized hole 18 provided at both ends of the block 11, and the metal rod 17 and the through hole 13 having the conductive film 13a are connected.
このような誘電体フイルタの通過帯域外減衰特
性(減衰帯域の減衰特性)は、減衰帯域における
特定の複数の周波数帯域に対して必要とする減衰
量によつて決定される。すなわち、この特定周波
数帯域の必要減衰量が得られる減衰特性によつて
フイルタの段数が決定されてしまう。しかし、こ
の特定周波数帯域の必要減衰量を除けばフイルタ
の段数が少くてすむ場合が多い。このことを第3
図を参照して、さらに説明する。 The attenuation characteristics outside the passband (attenuation characteristics in the attenuation band) of such a dielectric filter are determined by the amount of attenuation required for a plurality of specific frequency bands in the attenuation band. That is, the number of stages of the filter is determined by the attenuation characteristic that provides the necessary attenuation amount for this specific frequency band. However, in many cases, the number of filter stages can be reduced if the amount of attenuation required for this specific frequency band is excluded. This is the third
This will be further explained with reference to the drawings.
第3図は従来の誘電体フイルタの減衰特性曲線
を一例として示す図である。同図において、縦軸
は減衰量(dB)、横軸は周波数f(MHz)を示し、
実線で示す曲線Dは5段構成のフイルタ、そして
点線で示す曲線Eは6段構成のフイルタの減衰特
性曲線を示す。例えば、フイルタの3dB帯域が
25MHzで、中心周波数f0から高帯域側へ35〜45M
Hz離れた特定帯域19の減衰量が50dB以上必要
であるフイルタを設計する場合、5段構成のフイ
ルタでは、曲線Dが示すように、f0から38.1MHz
以上離れないと、50dB以上の減衰量はとれない。
そして、6段構成のフイルタの場合は、曲線Eが
示すように、f0から35MHz離れた所で56dB以上
の減衰量が得られる。従つて、低帯域側の減衰量
が曲線D(5段構成)又はそれ以下で充分である
場合でも、この場合のフイルタは曲線に基づいて
6段構成に形成する必要がある。また、この場
合、フイルタの無負荷Q0=1000(f=800MHz)
とすると、中心周波数f0における通過損失は、6
段構成の場合で約1.1dBであり、5段構成の場合
には0.9dBとなり、0.2dBの差が生ずる。すなわ
ち、段数が少いほど通過帯域での通過特性は良好
となる。このように、従来の誘電体フイルタで
は、例えば上記のような条件の場合でも6段構成
に形成する必要があり、この結果、フイルタが大
型化され、通過帯域内の通過損失が増大されると
いう好ましくない問題を含んでいる。 FIG. 3 is a diagram showing an example of an attenuation characteristic curve of a conventional dielectric filter. In the figure, the vertical axis shows the attenuation amount (dB), the horizontal axis shows the frequency f (MHz),
Curve D shown by a solid line shows the attenuation characteristic curve of a five-stage filter, and curve E shown by a dotted line shows an attenuation characteristic curve of a six-stage filter. For example, if the filter's 3dB bandwidth is
At 25MHz, 35~45M from center frequency f 0 to high band side
When designing a filter that requires attenuation of 50 dB or more in a specific band 19 separated by Hz, a 5-stage filter will have an attenuation of 50 dB or more from f 0 to 38.1 MHz, as shown by curve D.
Attenuation of 50dB or more cannot be achieved unless the distance is 50dB or more.
In the case of a 6-stage filter, as shown by curve E, an attenuation amount of 56 dB or more can be obtained at a distance of 35 MHz from f 0 . Therefore, even if the amount of attenuation on the low band side is equal to or less than curve D (5-stage configuration), it is necessary to form the filter in this case into a 6-stage configuration based on the curve. Also, in this case, the filter's no-load Q 0 = 1000 (f = 800MHz)
Then, the passing loss at the center frequency f 0 is 6
In the case of a stage configuration, it is approximately 1.1 dB, and in the case of a five-stage configuration, it is 0.9 dB, resulting in a difference of 0.2 dB. That is, the smaller the number of stages, the better the pass characteristics in the pass band. In this way, in conventional dielectric filters, it is necessary to form a six-stage configuration even under the above conditions, and as a result, the filter becomes larger and the pass loss within the pass band increases. Contains undesirable issues.
(4) 発明の目的
従つて、本発明は、上記従来の問題点に鑑み、
通過帯域外の特定帯域の減衰量を所定値以上に減
衰する必要がある場合、フイルタの段数を実質的
に最小限に抑えてフイルタの小型、軽量化を図
り、通過帯域内の通過特性も良好に維持し得る誘
電体フイルタを提供することを目的とするもので
ある。(4) Purpose of the invention Therefore, in view of the above-mentioned conventional problems, the present invention has been made to
When it is necessary to attenuate the amount of attenuation in a specific band outside the passband to a predetermined value or more, the number of stages in the filter is practically minimized to make the filter smaller and lighter, and the pass characteristics within the passband are also good. It is an object of the present invention to provide a dielectric filter that can maintain the following properties.
(5) 発明の構成
一個の誘電体ブロツクに複数個の貫通孔を所定
間隔をもつて形成し、該孔のうち所定の通過周波
数をその共振周波数とする共振子を形成する孔の
内面と、該孔の開口を含む一表面を除く前記誘電
体ブロツクの他の全ての表面とをメタライズし、
該誘電体ブロツクの両端部に、前記孔群の両端孔
とそれぞれ結合し、かつ外部回路と接続するため
の結合部を設けて成る1/4波長共振形同軸誘電体
フイルタにおいて、前記係合部の少くとも一方の
外側部に内面をメタライズした孔をさらに設け、
該孔に上記共振素子とは異なる共振周波数で、当
該フイルタの通過帯域外に減衰極を有する特定帯
域阻止用共振子を形成し、前記結合部と該特定帯
域阻止用共振子とを結合させたことを特徴とする
誘電体フイルタ。(5) Structure of the invention A plurality of through holes are formed in one dielectric block at predetermined intervals, and an inner surface of the hole forms a resonator whose resonant frequency is a predetermined passing frequency; metallizing all other surfaces of the dielectric block except for one surface including the opening of the hole;
In the 1/4 wavelength resonant coaxial dielectric filter, the coupling portions are provided at both ends of the dielectric block to couple with both end holes of the hole group and to connect to an external circuit, wherein the engagement portion further providing a hole with a metalized inner surface on at least one outer side of the
A specific band blocking resonator having a resonance frequency different from that of the resonant element and having an attenuation pole outside the passband of the filter is formed in the hole, and the coupling portion and the specific band blocking resonator are coupled. A dielectric filter characterized by:
(6) 発明の実施例
以下、本発明の実施例を図面に基づいて詳細に
説明する。(6) Embodiments of the invention Hereinafter, embodiments of the invention will be described in detail based on the drawings.
第4図から第6図は本発明の実施例を説明する
ための図である。 FIGS. 4 to 6 are diagrams for explaining embodiments of the present invention.
第4図は本発明による誘電体フイルタの実施例
の要部を示す図である。同図において、符号31
は誘電体ブロツク、31aはブロツク31の底面
と側面にメタライズされた外部導体膜、32,3
3,34は共振子を形成するための貫通孔、32
a,33a,34aは貫通孔のそれぞれの内面に
メタライズされた内部導体膜、35,36は結合
部を形成するコンデンサをそれぞれ示している。
さらに、符号37,38は通過帯域外の特定帯域
阻止用共振子を形成するための貫通孔をそれぞれ
示す。 FIG. 4 is a diagram showing essential parts of an embodiment of a dielectric filter according to the present invention. In the figure, reference numeral 31
31a is a dielectric block, 31a is an external conductor film metalized on the bottom and side surfaces of block 31, and 32, 3 is a dielectric block.
3 and 34 are through holes for forming a resonator; 32
Reference numerals a, 33a, and 34a indicate internal conductor films metalized on the inner surfaces of the through holes, and 35 and 36 indicate capacitors forming coupling portions, respectively.
Further, reference numerals 37 and 38 respectively indicate through holes for forming a resonator for blocking a specific band outside the passband.
本実施例は、このように、共振子32,34の
外側に隣接して内部をメタライズされた貫通孔3
7,38を設けて、これらを特定帯域阻止用共振
子すなわちバンド・リジエクシヨンフイルタ(以
下、BRFと呼ぶ)に形成し、貫通孔32,33,
34が形成するBPFと組合せて、同一誘電体ブ
ロツク31内に3段構成のBPFと2段構成の
BRFとを設けたものである。貫通孔37,38
は、その内面にメタライズされ内部導体膜37
a,38aが形成されているが、これらの導体膜
が1/4波長より若干長めに設定された共振素子に
形成されている。これらの共振子(貫通孔37,
38)は誘導性素子として動作し、入出力の結合
部(コンデンサ)35,36と結合して直列共振
し、BRFとして動作する。 In this embodiment, the through holes 3 are metalized inside adjacent to the outside of the resonators 32 and 34.
7 and 38 are provided, and these are formed into a specific band rejection resonator, that is, a band rejection filter (hereinafter referred to as BRF), and through holes 32, 33,
In combination with the BPF formed by 34, a three-stage BPF and a two-stage BPF are formed in the same dielectric block 31.
It is equipped with BRF. Through holes 37, 38
has an internal conductor film 37 metallized on its inner surface.
a, 38a are formed, and these conductor films are formed into a resonant element set to be slightly longer than 1/4 wavelength. These resonators (through holes 37,
38) operates as an inductive element, is coupled with the input/output coupling parts (capacitors) 35 and 36, resonates in series, and operates as a BRF.
尚、これら導体膜37a,38aの深さ(又は
高さ)は阻止すべき周波数の1/4波長より若干長
めに設定される。このように形成された誘電体ブ
ロツクは、第2図に示した従来例と同様に、筐体
に収容し誘電体フイルタとして組立てられる。一
体形の誘電体フイルタにおいて、この様な方法に
よりBRFを構成することにより、構成が簡単で
Qの高いBRFが付加できる。尚、第4図におい
て、共振子37と38は必要に応じていずれか1
個だけ設けてもよく、この場合は減衰量が半減す
るだけである。 The depth (or height) of these conductor films 37a and 38a is set to be slightly longer than 1/4 wavelength of the frequency to be blocked. The dielectric block thus formed is housed in a housing and assembled as a dielectric filter, as in the conventional example shown in FIG. By configuring the BRF in an integrated dielectric filter using this method, a BRF with a simple configuration and high Q can be added. In addition, in FIG. 4, the resonators 37 and 38 may be replaced with either one as necessary
In this case, the amount of attenuation is only halved.
次に第5図を参照して、第4図に示した実施例
の減衰特性について説明する。 Next, with reference to FIG. 5, the attenuation characteristics of the embodiment shown in FIG. 4 will be explained.
第5図は、本発明の実施例の減衰特性曲線を示
す図で前述の従来例の減衰特性曲線(第3図)と
対比して示した図である。従つて、曲線DとEは
それぞれ5段構成と6段構成の従来フイルタにお
ける減衰特性曲線を示す。そして、符号40は中
心周波数f0から低帯域側へ35〜45MHz離れた特定
帯域を示し減衰量が50dBの位置を示す。さて、
実施例(第4図)の場合は、BRFが3段構成で
あるためこれのみの減衰特性は1点鎖線で示す曲
線Fの如くなる。しかし共振素子37,38が特
定帯域35の周波数と共振するように構成されて
いるため、特定帯域35部分の減衰特性は2点鎖
線で示す曲線Hの如くになり50dB以上の減衰量
が得られる。従つて、この実施例の減衰特性曲線
の低帯域側は、曲線FのF″部分が曲線Hに変化
された曲線で示され、そして高帯域側は曲線Fで
示されることになる。このように、高帯域側は曲
線Fが示す減衰特性で充分であり、低帯域側の特
定帯域35のみ50dB以上減衰させる必要がある
場合、従来例では前述の如く6段構成のフイルタ
が必要であつたが、この実施例では、第4図から
明らかなように、BPFが3段構成でBRFが2段
構成の実質的に5段構成のフイルタで所望の減衰
特性が得られることになる。すなわち、本発明に
依れば、従来例に比べて少くとも1段少いフイル
タを構成することが可能となり、この結果、小
型、軽量で通過帯域の通過特性を良好に維持し得
る誘電体フイルタを実現することができる。 FIG. 5 is a diagram showing the attenuation characteristic curve of the embodiment of the present invention, in comparison with the attenuation characteristic curve of the prior art example (FIG. 3) described above. Accordingly, curves D and E represent the attenuation characteristic curves for conventional filters with a five-stage configuration and a six-stage configuration, respectively. Reference numeral 40 indicates a specific band 35 to 45 MHz away from the center frequency f 0 toward the lower band side, and indicates a position where the amount of attenuation is 50 dB. Now,
In the case of the embodiment (FIG. 4), since the BRF has a three-stage configuration, the attenuation characteristic of this alone becomes like a curve F shown by a dashed line. However, since the resonant elements 37 and 38 are configured to resonate with the frequency of the specific band 35, the attenuation characteristic of the specific band 35 portion becomes like the curve H shown by the two-dot chain line, and an attenuation amount of 50 dB or more is obtained. . Therefore, the low band side of the attenuation characteristic curve of this example is shown by a curve in which the F'' portion of curve F is changed to curve H, and the high band side is shown by curve F. In addition, the attenuation characteristic shown by curve F is sufficient on the high band side, and if it is necessary to attenuate only the specific band 35 on the low band side by 50 dB or more, in the conventional example, a 6-stage filter is required as described above. However, in this embodiment, as is clear from FIG. 4, the desired attenuation characteristics can be obtained with a filter having essentially a five-stage configuration, with the BPF having a three-stage configuration and the BRF having a two-stage configuration. According to the present invention, it is possible to configure a filter with at least one stage fewer than the conventional example, and as a result, a dielectric filter that is small, lightweight, and can maintain good passband characteristics is realized. can do.
また、本発明によれば、BRFを形成する共振
子37,38がBPFの共振子32,33,34
よりも短かく形成することも可能である。この場
合、実施例とは逆に共振素子は高帯域側の特定帯
域の周波数に共振してこの周波数を阻止(減衰)
するので、その減衰特性曲線は第6図に示す如く
になる。すなわち、この場合は、中心周波数f0か
ら高帯域側へ35〜45MHz離れた特定帯域19に共振
しかつ、該帯域の減衰量を50dB以上に減衰でき
るようにBRFの共振素子が形成されることにな
る。従つて、この減衰特性曲線の高帯域側は曲線
FのF′部分が曲線Gに変化された曲線で示され、
そして低帯域側は曲線Fで示されることになる。 Further, according to the present invention, the resonators 37 and 38 forming the BRF are the resonators 32, 33, and 34 of the BPF.
It is also possible to form it shorter than that. In this case, contrary to the example, the resonant element resonates at the frequency of a specific band on the high band side and blocks (attenuates) this frequency.
Therefore, the attenuation characteristic curve becomes as shown in FIG. That is, in this case, the BRF resonant element is formed so that it resonates in a specific band 19 that is 35 to 45 MHz away from the center frequency f 0 toward the high band side and can attenuate the amount of attenuation in that band to 50 dB or more. become. Therefore, the high band side of this attenuation characteristic curve is shown by a curve in which the F' portion of curve F is changed to curve G,
The low band side is shown by curve F.
(7) 発明の効果
以上、詳細に説明したように、本発明の誘電体
フイルタは、通過帯域外に減衰極を有する特定帯
域阻止用フイルタ(BRF)を設けることにより、
簡易構成で小型、軽量化が可能で、かつ通過帯域
内の通過特性をも良好に維持し得るというた結果
大なるものがある。(7) Effects of the Invention As explained in detail above, the dielectric filter of the present invention has the following effects by providing a specific band rejection filter (BRF) having an attenuation pole outside the passband.
The advantage is that it has a simple configuration, can be made small and lightweight, and can maintain good pass characteristics within the pass band.
第1図は従来の誘電体ブロツクの一部切欠き斜
視図、第2図は第1図のA−A′線における断面
図、第3図は従来の誘電体フイルタの減衰特性曲
線を示す図、第4図は本発明による誘電体フイル
タの実施例の要部を示す図、第5図は第4図に示
した実施例の減衰特性曲線を示す図、第6図は本
発明の他の実施例の減衰特性曲線を示す図であ
る。
31……誘電体ブロツク、31a……外部導体
膜、32,33,34……BPFの貫通孔(共振
子)、32a,33a,34a……BPFの内部導
体膜、35,36……コンデンサ、37,38…
…BRFの貫通孔(共振子)、37a,38a……
BRFの内部導体膜。
Fig. 1 is a partially cutaway perspective view of a conventional dielectric block, Fig. 2 is a cross-sectional view taken along line A-A' in Fig. 1, and Fig. 3 is a diagram showing the attenuation characteristic curve of a conventional dielectric filter. , FIG. 4 is a diagram showing a main part of an embodiment of a dielectric filter according to the present invention, FIG. 5 is a diagram showing an attenuation characteristic curve of the embodiment shown in FIG. 4, and FIG. It is a figure which shows the attenuation characteristic curve of an Example. 31...Dielectric block, 31a...Outer conductor film, 32, 33, 34...Through hole (resonator) of BPF, 32a, 33a, 34a...Inner conductor film of BPF, 35, 36...Capacitor, 37, 38...
...BRF through holes (resonators), 37a, 38a...
BRF internal conductor membrane.
Claims (1)
定間隔をもつて形成し、該孔のうち所定の通過周
波数をその共振周波数とする共振子を形成する孔
の内面と、該孔の開口を含む一表面を除く前記誘
電体ブロツクの他の全ての表面とをメタライズ
し、該誘電体ブロツクの両端部に、前記孔群の両
端孔とそれぞれ結合し、かつ外部回路と接続する
ための結合部を設けて成る1/4波長共振形同軸誘
電体フイルタにおいて、前記結合部の少くとも一
方の外側部に内面をメタライズした孔をさらに設
け、該孔に上記共振素子とは異なる共振周波数
で、当該フイルタの通過帯域外に減衰極を有する
特定帯域阻止用共振子を形成し、前記結合部と該
特定帯域阻止用共振子とを結合させたことを特徴
とする誘電体フイルタ。1. A plurality of through holes are formed at a predetermined interval in one dielectric block, and the inner surface of the hole that forms a resonator whose resonant frequency is a predetermined passing frequency, and the opening of the hole. All other surfaces of the dielectric block except one surface including the metallized surface are metalized, and coupling parts are provided at both ends of the dielectric block to respectively couple with both end holes of the hole group and to connect to an external circuit. In the 1/4 wavelength resonant coaxial dielectric filter, a hole whose inner surface is metallized is further provided on at least one outer side of the coupling part, and the hole has a resonant frequency different from that of the resonant element. 1. A dielectric filter comprising: a specific band blocking resonator having an attenuation pole outside the passband of the filter; and coupling the coupling portion to the specific band blocking resonator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21340382A JPS59104801A (en) | 1982-12-07 | 1982-12-07 | Dielectric filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21340382A JPS59104801A (en) | 1982-12-07 | 1982-12-07 | Dielectric filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59104801A JPS59104801A (en) | 1984-06-16 |
| JPH0478041B2 true JPH0478041B2 (en) | 1992-12-10 |
Family
ID=16638638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21340382A Granted JPS59104801A (en) | 1982-12-07 | 1982-12-07 | Dielectric filter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59104801A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6271901U (en) * | 1985-10-22 | 1987-05-08 | ||
| JPS62120701A (en) * | 1985-11-20 | 1987-06-02 | Tdk Corp | Dielectric filter |
| JPS6364404A (en) * | 1986-09-04 | 1988-03-22 | Murata Mfg Co Ltd | Dielectric filter |
| JP3175602B2 (en) * | 1996-09-19 | 2001-06-11 | 株式会社村田製作所 | Dielectric filter, duplexer and multiplexer |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5420638A (en) * | 1977-07-16 | 1979-02-16 | Nec Corp | Polarized filter |
| JPS57133101U (en) * | 1981-02-16 | 1982-08-19 | ||
| JPS6216002Y2 (en) * | 1981-03-09 | 1987-04-23 |
-
1982
- 1982-12-07 JP JP21340382A patent/JPS59104801A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59104801A (en) | 1984-06-16 |
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