JPH0479564B2 - - Google Patents

Description

[Detailed description of the invention]

[Industrial Application Field] The present invention relates to a device for detecting the attitude of a small diameter pipe burying machine, a tunnel excavating machine, etc. [Prior art] A small-diameter pipe burying machine press-fits a pilot head with a directional control function at the tip and a trailing pilot pipe (leading pipe) using a hydraulic jack, and then buries the fume pipe. , it is highly dependent on the control performance of the pilot tube, especially the pilot head. Therefore, it is important for the operator to accurately know the posture of the pilot head during press-fitting.
extremely important. Therefore, conventionally, a condensing lens and a two-dimensional semiconductor position detector (position sensor) are disposed in the pilot head in a manner perpendicular to the axis of the head, and a reference laser beam projected from a laser transit is directed to the lens. An attitude detection device has been proposed and put into practical use in which the laser beam is incident on the position detector through a Since the directional deviation angle (azimuth angle) and vertical deviation angle (pitch angle) can be detected electrically based on the output of the light spot position detector, conventionally the detection results were displayed on a meter etc. for operators to use. The system was made to recognize changes in the attitude angle of the pilot head. [Problems to be Solved by the Invention] The above-mentioned conventional attitude detection device has a mesh plate disposed within the pilot head, and the point of incidence of the laser beam on the mesh plate is collimated by the laser transit. Since the amount of lateral deviation of the pilot head is detected, if the distance between the pilot head and the transit is large, it will be difficult to read the scale on the mesh plate. In addition, there is the inconvenience of having to have a worker on hand at all times to read the scale, and furthermore, since the measurement results of the amount of lateral deviation cannot be obtained as electrical signals, automatic control of the pilot head is required. The disadvantage is that the measurement results cannot be used for Therefore, an apparatus has been proposed in Japanese Utility Model Publication No. 58-52483, which uses a light receiving plate having linear light receiving elements arranged in a grid pattern in place of the mesh plate. This device has the advantage of being able to electrically detect the amount of lateral deviation, but on the other hand, due to the light shielding effect of the linear light receiving elements arranged in the grid, the light receiving plate Since a phenomenon occurs in which the center of gravity of the beam that has passed through the beam is shifted from the optical axis of the beam, there is a problem that an error occurs in the detection result of the position sensor for detecting the attitude angle that receives the beam that has passed through the beam. . In addition, the above device has the practical inconvenience of having to set the diameter of the laser beam incident on the light receiving plate to be larger than the arrangement interval of the linear light receiving elements, and the position detection accuracy of the light receiving plate is low. It also has the disadvantage of being limited to 1/2 of the arrangement spacing of the linear light receiving elements. [Means for Solving the Problems] The present invention aims to solve the problems of the conventional art, and for this purpose, it is an object of the present invention to solve the problems of the conventional art. a two-dimensional semiconductor position detector, a condensing lens disposed in front or behind the first two-dimensional semiconductor position detector, and a second two-dimensional semiconductor position detector disposed at the focal point of the lens.
a light receiving section including a dimensional semiconductor position detector; and a projected laser beam that passes through the first two-dimensional semiconductor position detector and the lens and then reaches the second two-dimensional semiconductor position detector. The optical axis shift of the light receiving section with respect to the laser beam is calculated based on the output of the laser beam projecting means disposed in Calculating means for calculating the angle of the optical axis of the light receiving section with respect to the laser beam based on the output of the semiconductor position detector is provided. [Embodiments] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the attitude detection device according to the embodiment of the present invention, a light receiving section 1 having a configuration as shown in FIG. 1 is used. As shown in FIG. 7, the light receiving section 1 is disposed inside a pilot head 101 of a small diameter pipe burying machine in such a manner that its optical axis coincides with the central axis of the head 101. This light receiving section 1 includes a first two-dimensional semiconductor position detector 2 having light-transmitting properties, an aspheric condensing lens 3 disposed behind the first two-dimensional semiconductor position detector 2, and a first two-dimensional semiconductor position detector 2 having a light-transmitting property. A second lens disposed at the focal position of the lens 3.
A two-dimensional semiconductor position detector 4 is provided. The semiconductor position detector 2 has a configuration as shown in FIG. That is, a resistance layer 22 made of a transparent conductive film (for example, made of ITO) is formed on a transparent substrate 21 made of glass or the like by a sputtering method or a vacuum evaporation method. A semiconductor layer 23 that generates a photovoltaic force is formed on the upper surface of this resistive layer 22, and a resistive layer 24 made of a transparent conductive film is further formed on the upper surface of this layer 23 by the same method as the resistive layer 22. It is formed. Note that resistance layer 2
The film thicknesses 2 and 24 are set to, for example, about 1000 Å. The semiconductor layer 23 is a p-type amorphous silicon layer (hereinafter referred to as p layer) 3 as shown in FIG.
1. It has a three-layer structure consisting of an i-type amorphous silicon layer (hereinafter referred to as i-layer) 32 and an n-type amorphous silicon layer (hereinafter referred to as n-layer) 33. The p, i, and n layers constituting this semiconductor layer 23 are:
Glow discharge decomposition CVD (chemical vapor)
In this example, the film thicknesses dp, di and dn are as follows:
dp≒100~300Å, di=4000~6000Å and
dn is set at approximately 300 to 500 Å. At both ends of the resistance layer 22, a pair of rod-shaped X-direction current collecting electrodes 25a, 25b are arranged facing each other, and similarly, at both ends of the resistance layer 24, a pair of Y-direction current collecting electrodes 26a, 26b are arranged. They are placed opposite each other.
Lead wires 27 for extracting current are connected to the central portions of these current collecting electrodes. Such a position detector 2 has optical transparency because the substrate 1 is made of glass and the resistance layers 22 and 24 are formed of transparent conductive films. The detector 2 includes the electrodes 25a, 25b and 26.
The area surrounded by a and 26b functions as a light receiving area. Note that the second position detector 4 can also have the same configuration as the position detector 2, but since this detector 4 does not need to be light-transmissive, for example, the light on the substrate 1 side In the case of forming the resistive layer 24 on the incident surface side, the resistive layer 24 may be formed of a light-shielding material.
Further, when the resistance layer 24 side is used as the light-receiving surface, the resistance layer 22 and the substrate 1 may be formed of a light-shielding material. The light receiving section 1 includes a laser projector 5 shown in FIG.
used in combination with That is, the pilot head 10 shown in FIG.
1, a reference laser beam L is projected toward the light receiving section 1 from a laser projector 5 shown in FIG. This laser beam L is set as a reference in the traveling direction of the pilot head 101, and is used as a reference for the direction of movement of the pilot head 101.
After passing through the lens 3, the light enters the position detector 4. As shown in Fig. 1, position detector 2, lens 3
and the position detector 4 have their center points at the light receiving part 1.
The optical axis J of the pilot head 101, that is, the central axis of the pilot head 101, is disposed so as to pass through the optical axis J of the pilot head 101. Therefore, when light parallel to the optical axis J enters the position detector 2 as shown by the solid line in FIG. 1, this light is focused by the lens 3 and enters the center point of the position detector 4. Further, as shown by the dotted line in the same figure, the light incident at a pitch angle α with respect to the optical axis J will be incident on a point on the position detector 4 that is shifted by δ from the above-mentioned center point. The relationship between δ and α is δ=f・tan α...(1) However, since f is expressed as the focal point distance of lens 3, if δ is found, α can be obtained from the following equation (2). . α=tan ^-1 δ/f ...(2) Note that the azimuth angle of the above incident light is β, and this azimuth angle β
Letting η be the deviation of the light incident position on the detector 4 based on the equation (2), the azimuth angle β is expressed as β=tan ⁻¹ η/f (3) according to equation (2). A photogenerated current based on the photoelectric conversion action of the semiconductor layer 23 is generated at the incident position S of the laser beam L in the first two-dimensional semiconductor position detector 2, and this photogenerated current is generated between the position S and the electrodes 25a and 25b. It is divided in a manner inversely proportional to each resistance, and the position S
and is divided in a manner inversely proportional to each resistance between the electrodes 26a and 26b. As a result, divided currents are generated from the X-direction current collecting electrodes 25a and 25b of the position detector 2.
I _X11 , I _X12 are taken out, and divided currents I _Y11 , I
I _Y12 is taken out. On the other hand, the photogenerated current generated at the incident position T of the laser beam L in the second two-dimensional semiconductor position detector 4 is also divided in the same way as above, and as a result, the
Divided current I _X21 from the directional current collecting electrodes 25a, 25b,
I _X22 is taken out, and divided currents I _Y21 and I _Y22 are taken out from the Y-direction current collecting electrodes 26a and 26b. These currents are connected to the input circuit 5 as shown in FIG.
1 to the CPU 52. and CPU
52 executes the procedure shown in FIG. 6 to determine the incident positions S and T of the laser beams L on the detectors 2 and 4. That is, the CPU 52 takes in each output current I _X11 , I _X12 , I _Y11 , I _Y12 of the first semiconductor position detector 2 (step 61), and performs the calculations shown in the following equations (4) and (5). The position S (X ₁ , Y ₁ ) is determined (step 62). _{X 1 =} L _X1 / 2 (I _X12 − _{I X11 ) / ( I X12 + I} 5) However, L _X1 : Current collecting electrode 25a in position detector 2,
Distance between 25b L _Y1 : Current collecting electrodes 26a and 26 in the same detector
The distance between b The coordinates (X ₁ , Y ₁ ) of the position S determined by the above formula are:
Amount of lateral deviation of optical axis J with respect to laser beam L (X ₁ )
and vertical shift amount (Y ₁ ). The semiconductor position detector 2 has a detection range ( _L
Since the detection error for _L
mm, and sufficient detection accuracy can be obtained. Note that the above equations (4) and (5) are general equations for determining the incident position of a light beam on a semiconductor position detector. (Arimoto, S., Yamamoto, H.,
Ohno, H., Hasegawa, H.; 15th Conference
onSolid State Devices and Materials, 1983,
(See PP197 to PP200) Next, the CPU 52 connects the second semiconductor position detector 4
_{The output} currents _{I X21 , I} 64). _{X 2} = L _X2 / ₂ (I _X22 − I _{X21 ) / ( I X22 + I 7} ) _However , L
Based on (X ₂ , Y ₂ ), calculations shown in the following equations (8) and (9) are performed to obtain pitch angle α and azimuth angle β (step 65). Note that these equations (8) and (9) correspond to the above-mentioned equations (2) and (3). α=tan ^-1 (Y ₂ /f) ...(8) β=tan ^-1 (X ₂ /f) ...(9) However, f: Focal length of lens 3 The semiconductor position detector 4 described above has a detection error is about 0.5%, so the detection range (L _X2 ×L _Y2 ) is, for example, 20
If ×20mm, the error will be approximately 0.1mm. Therefore, if = 150 mm, the detected pitch angle α
The error in the azimuth angle β is ±0.6/1000, and therefore sufficient detection accuracy can be obtained. In this way, based on the output of the first position detector 2, the amount of lateral deviation of the optical axis J of the light receiving section 1 with respect to the laser beam L is detected, and based on the output of the second position detector 4, the amount of lateral deviation of the optical axis J of the light receiving section 1 is detected. The attitude, that is, the pitch angle and azimuth angle of the light receiving section 1 with respect to the optical axis J are determined. The CPU 52 applies a signal indicating the position S, that is, the amount of lateral deviation, and a signal indicating the pitch angle α and the azimuth angle β to the display 54 and the pilot head control unit 55 via the output circuit 53 (step 66). The display 54 displays the amount of lateral deviation X ₁ , Y ₁ , the pitch angle α and the azimuth angle β, and the pilot head control unit 55 controls the pilot head 10.
The vertical swing jack 71, the horizontal swing jack 72, and the pilot jack 73 shown in FIGS. 7 and 8 provided inside the controller 1 are controlled. That is, the pilot head control section 55 sets the target expansion/contraction amount of each of the swinging jacks 71 and 72 based on the lateral shift amount, pitch angle α, and azimuth angle β. _Then , _drive signals E _X1 (or _E Activate each. As a result, each swinging jack 71 and 72 connected to each electromagnetic valve 81 and 82 expands and contracts, and these jacks 7
1 and 72 is swung vertically and horizontally.
At this time, the amount of expansion and contraction of each jack 71 and 72 is detected by each potentiometer ₈₃ and 84, and signals _F When the amount of expansion and contraction of the rocking jacks 71 and 72 becomes equal to each of the target amounts of expansion and contraction, the expansion and contraction of those jacks 71 and 72 is stopped. Next, the pilot head control section 55 sends a drive signal E _Z1 (or E _Z2 ) to the solenoid of the electromagnetic valve 85.
, which causes the pilot jack 73 connected to the electric valve 85 to expand and contract. FIGS. 7a, b, c, and d illustrate aspects of such control. That is, FIG. 7a shows a state in which the amount of lateral deviation, pitch angle α, and azimuth angle β with respect to the laser beam L are detected by the light receiving unit 1. Further, in FIG. 7b, it is detected by the light receiving unit 1 that the press-fitting direction of the pilot head 101 is shifted downward, and the vertically swinging jack 71
The state in which the pilot jack 73 is swung upward is shown. Furthermore, FIG. 7c shows a state in which the pilot jack 73 is being advanced, and FIG. A state in which the tubular body of the head 101 is being propelled as the pilot jack 73 retracts, that is, a state in which the posture of the pilot head 101 has been corrected and is accurately press-fitted toward the target direction is shown. FIG. 9 shows another example of the light receiving section 1 in the attitude detection device according to the present invention. This light receiving section 1 has a configuration in which a first two-dimensional semiconductor position detector 2 is disposed in front of an aspherical condensing lens 3. Therefore, when the light receiving range of the lens 3 is H, the detection range of the two-dimensional semiconductor position detector 2 in this light receiving section 1 may be h (<H).
In other words, according to this light receiving section 1, the effective light receiving area of the detector 2 is substantially expanded (for example, from 80 x 80 mm to 90 mm).
90 mm), the detector 2 can be made smaller than the light receiving section 1 shown in FIG. However, in the light receiving section 1 shown in FIG.
If the pitch angle α or the azimuth angle β with respect to the laser beam L is not zero, an error t will occur in the measured value of the position detector 2. However, when the focal length of lens 2 is f = 150 mm and the pitch angle is α = 1.7°, the error t is about 0.5 mm, so the accuracy required for this type of small diameter pipe burying machine is sufficient. Secured. In addition, if the above error t becomes a problem, the detected deviation amount (X ₁ , Y ₁ ) can be corrected based on the following equations (10) and (11), and this embodiment Then, the CPU 52 is made to correct this amount of deviation. x ₁ =/-d (X ₁ + d/X ₂ ) ...(10) y ₁ =/- d (Y ₁ + d/Y ₂ ) ... (11) where, d: Lens 3 and first semiconductor position Distance between the detectors 2 x ₁ , y ₁ : Corrected deviation amount X ₂ , Y ₂ : Incident position of the laser beam detected by the second semiconductor position detector 4 FIG. An example is shown. In this light receiving section 1, a spherical lens 3' having spherical aberration is used. When such a lens 3' is used, the following phenomenon occurs due to its spherical aberration. That is, if the laser beam L is incident on the second semiconductor position detector 4 at a distance H ₀ from the optical axis J of the lens 3' and parallel to the optical axis J, the beam L will be incident on the second semiconductor position detector 4 at a distance H 0 from the optical axis J. The light is incident at a position shifted by H ₁ (aberration value). The following table shows each distance H ₀ above.
and H ₁ are exemplified.

〔Effect of the invention〕

In the present invention, as the first light receiving means for detecting the amount of deviation of the light receiving part with respect to the laser beam, the light receiving area is formed by a homogeneous thin film having translucency.
It uses a dimensional semiconductor position detector. In the case of the semiconductor position detector described above, the horizontal and vertical intensity distributions of the laser beam passing through the detector both exhibit a pattern in which the peak value is at the optical axis position of the beam. Therefore, according to the present invention, the intensity gravity center position of the laser beam that reaches the second two-dimensional semiconductor position detector via the lens coincides with the optical axis position of the laser beam, and as a result, this second The attitude angle can be detected with extremely high accuracy based on the output of the two-dimensional semiconductor position detector. In addition, since there is a degree of freedom in the diameter of the laser beam projected from the light projecting means, it is highly practical, and considering the configuration of the first light receiving means, the accuracy of detecting the amount of deviation of the light receiving section with respect to the laser beam is also high. expensive.

[Brief explanation of drawings]

FIG. 1 is a conceptual diagram showing an example of a light receiving section used in the attitude detection device according to the present invention, and FIG. 2 a is a plan view showing the configuration of a two-dimensional semiconductor position detector used in the light receiving section. Figures b and c are A in figure a, respectively.
-A' line and B-B'line; Figure 3 is a diagram partially showing the structure of the semiconductor layer in the semiconductor position detector shown in Figure 2; Figure 4 is the light receiving unit shown in Figure 1. FIG. 5 is a block diagram showing an embodiment of the device according to the present invention, and FIG.
The figure is a flowchart showing the processing procedure of the CPU shown in Fig. 5, Figs. 7 a to d are diagrams showing aspects of attitude control of the pilot head, and Fig. 8 is a hydraulic circuit that drives each jack of the pilot head. FIG. 9 is a conceptual diagram showing another example of the light receiving section, and FIG. 10 is a conceptual diagram showing still another example of the light receiving section. DESCRIPTION OF SYMBOLS 1... Light receiving part, 2... First semiconductor position detector, 3, 3'... Lens, 4... Second semiconductor position detector, 5... Laser projector, 52... CPU,
54...Display device, 55...Pilot head control unit, 101...Pilot head.

Claims (1)

[Claims] 1. A first two-dimensional semiconductor position detector in which a light-receiving area is formed by a homogeneous light-transmitting thin film, and a first two-dimensional semiconductor position detector in front or behind the first two-dimensional semiconductor position detector. a light receiving section comprising a condensing lens arranged therein and a second two-dimensional semiconductor position detector arranged at the focal position of the lens; and a projected laser beam detecting the first two-dimensional semiconductor position detector. a laser beam projector arranged to reach the second two-dimensional semiconductor position detector after passing through the device and the lens; and based on the output of the first two-dimensional semiconductor position detector. Calculating means for calculating the deviation of the optical axis of the light receiving section with respect to the laser beam, and calculating the angle of the optical axis of the light receiving section with respect to the laser beam based on the output of the second two-dimensional semiconductor position detector; An attitude detection device comprising: