JPH048955B2 - - Google Patents
Info
- Publication number
- JPH048955B2 JPH048955B2 JP57017273A JP1727382A JPH048955B2 JP H048955 B2 JPH048955 B2 JP H048955B2 JP 57017273 A JP57017273 A JP 57017273A JP 1727382 A JP1727382 A JP 1727382A JP H048955 B2 JPH048955 B2 JP H048955B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor integrated
- barrier diode
- integrated circuit
- schottky barrier
- incorporated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
【発明の詳細な説明】
本発明は半導体集積回路に組込まれるシヨツト
キーバリアダイオードの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a Schottky barrier diode incorporated into a semiconductor integrated circuit.
従来の半導体集積回路に組込まれるシヨツトキ
ーバリアダイオードは、第１図および第２図に示
す如く、Ｐ型の半導体基板１と、基板１上に積層
されたN-型エピタキシヤル層２と、N+型の埋め
込み層３と、エピタキシヤル層２の表面を被覆す
るSiO2等の絶縁膜４と、絶縁膜４に設けた孔５
を介してエピタキシヤル層２表面に金属接触した
蒸着アルミニウムによるアノード電極６と、その
近傍でエピタキシヤル層２にN+型のコンタクト
領域７を介してオーミツク接触したカソード電極
８より形成されている。 As shown in FIGS. 1 and 2, a Schottky barrier diode incorporated into a conventional semiconductor integrated circuit includes a P-type semiconductor substrate 1, an N - type epitaxial layer 2 laminated on the substrate 1, and An N + type buried layer 3, an insulating film 4 such as SiO 2 covering the surface of the epitaxial layer 2, and a hole 5 provided in the insulating film 4.
An anode electrode 6 made of vapor-deposited aluminum is in metal contact with the surface of the epitaxial layer 2 through an anode electrode 6, and a cathode electrode 8 is in ohmic contact with the epitaxial layer 2 through an N + type contact region 7 in the vicinity thereof.
理想的なシヨツトキーバリアダイオードを形成
するには、モリブデン等を電極材料として用いる
ことが報告されているが、アルミニウムは半導体
集積回路の電極として非常に使い易いのでほとん
どの半導体集積回路でアルミニウムを蒸着して配
線として用いている。上述したアルミニウムを用
いたシヨツトキーバリアダイオードでは、アルミ
ニウムとシリコンの合金の程度が高い程、即ち高
温度、長時間の合金熱処理を行つた方が、シヨツ
トキーバリアダイオードの順方向立上り電圧が低
下し、且つ直列抵抗分が減少して良好な特性が得
られる。 It has been reported that molybdenum or the like is used as an electrode material to form an ideal Schottky barrier diode, but since aluminum is very easy to use as an electrode in semiconductor integrated circuits, aluminum is used in most semiconductor integrated circuits. It is vapor-deposited and used as wiring. In the Schottky barrier diode using aluminum as described above, the higher the degree of alloying of aluminum and silicon, that is, the higher the temperature and the longer the alloy heat treatment, the higher the forward rise voltage of the Schottky barrier diode. In addition, the series resistance component is reduced, and good characteristics can be obtained.
しかし半導体集積回路では一緒に集積化された
トランジスタや抵抗等の他の拡散領域とのオーミ
ツク接触を取る必要があり、従つて合金温度はこ
れらのオーミツク接触に合わせて一般的には450
〜530℃が用いられる。この温度は前述した如く
シヨツトキーバリアダイオードの合金温度として
は低すぎる。 However, in semiconductor integrated circuits, it is necessary to make ohmic contact with other diffusion regions such as transistors and resistors that are integrated together, so the alloy temperature is generally set at 450°C to accommodate these ohmic contacts.
~530°C is used. As mentioned above, this temperature is too low for the alloy temperature of a Schottky barrier diode.
一方、シリコン基板上の酸化膜に孔を開けてア
ルミニウムとシリコンの合金を行うと、孔の周辺
で深く合金される傾向がある。これをアロイスパ
イクと呼ぶ。従つて従来のシヨツトキーバリアダ
イオードでも第２図に示す如く孔の周辺にアロイ
スパイク９が形成される。 On the other hand, when aluminum and silicon are alloyed by drilling holes in an oxide film on a silicon substrate, there is a tendency for the alloy to form deeply around the holes. This is called an alloy spike. Therefore, even in the conventional Schottky barrier diode, alloy spikes 9 are formed around the hole as shown in FIG.
本発明は斯点に鑑みてなされ、従来より大巾に
秀れた特性を有する半導体集積回路に組込まれる
シヨツトキーバリアダイオードの製造方法を提供
するものである。以下に第３図および第４図を参
照して本発明の実施例を詳述する。 The present invention has been made in view of this point, and provides a method for manufacturing a Schottky barrier diode that is incorporated into a semiconductor integrated circuit and has characteristics far superior to those of the prior art. Embodiments of the present invention will be described in detail below with reference to FIGS. 3 and 4.
本発明に依るシヨツトキーバリアダイオードは
第１図および第２図に示す従来の構造に於いて、
絶縁膜４に設ける孔５に最大の特徴を有してい
る。すなわち孔５を第３図に示す様に複数の小孔
１５…１５に分割した多孔状にするか、あるいは
第４図に示す如く王字状に凹凸に入り、組ませて
凹凸状にする。この結果孔５の周辺長は大巾に増
大し、前述したアロイスパイクを多く得ることが
できる。このため合金温度を他のオーミツク接触
に最適に設定しても、シヨツトキーバリアダイオ
ードの特性を改善する深い合金を得ることがで
き、その特性を大巾に改善できるのである。 The shot key barrier diode according to the present invention has the conventional structure shown in FIGS.
The hole 5 provided in the insulating film 4 has the greatest feature. That is, the hole 5 is formed into a porous shape divided into a plurality of small holes 15, . As a result, the peripheral length of the hole 5 is greatly increased, making it possible to obtain more of the aforementioned alloy spikes. Therefore, even if the alloy temperature is set optimally for other ohmic contacts, it is possible to obtain a deep alloy that improves the properties of the Schottky barrier diode, and its properties can be greatly improved.
第５図に孔の周辺長と順方向電流Ifとの関係を
示す。この特性から順方向電流は周辺長に比例し
て急峻に増加することが明らかである。従つてシ
ヨツトキーバリアダイオードのコンタクト面積よ
りもむしろ孔の周辺長の増大により大巾に特性を
改善できる。 FIG. 5 shows the relationship between the peripheral length of the hole and the forward current If. It is clear from this characteristic that the forward current increases sharply in proportion to the peripheral length. Therefore, the characteristics can be greatly improved by increasing the peripheral length of the hole rather than by increasing the contact area of the Schottky barrier diode.
以上に詳述した如く本発明に依れば、孔の周辺
長を増加させることにより従来の同じ低い合金温
度で設定して処理しても良好な特性のシヨツトキ
ーバリアダイオードを実現できる。この結果半導
体集積回路に組込まれる様々の回路に採用でき、
種々の回路性能を得ることができる。 As described in detail above, according to the present invention, by increasing the peripheral length of the hole, a Schottky barrier diode with good characteristics can be realized even when processed at the same low alloy temperature as in the prior art. As a result, it can be used in various circuits incorporated into semiconductor integrated circuits.
Various circuit performances can be obtained.
第１図は従来例を説明する上面図、第２図は第
１図の−線断面図、第３図および第４図は本
発明を説明する上面図、第５図は周辺長と順方向
電流との関係線図である。
１は半導体基板、２はエピタキシヤル層、３は
埋め込み層、４は絶縁膜、５は孔、６はアノード
電極、７はコンタクト領域、８はカソード電極、
９はアロイスパイクである。
Fig. 1 is a top view explaining a conventional example, Fig. 2 is a sectional view taken along the line - - of Fig. 1, Figs. 3 and 4 are top views explaining the present invention, and Fig. 5 is a peripheral length and forward direction. It is a relationship diagram with electric current. 1 is a semiconductor substrate, 2 is an epitaxial layer, 3 is a buried layer, 4 is an insulating film, 5 is a hole, 6 is an anode electrode, 7 is a contact region, 8 is a cathode electrode,
9 is an alloy spike.
Claims (1)
覆する絶縁膜に、半導体集積回路に組込まれるシ
ヨツトキーバリアダイオードのシヨツトキー接合
を形成するためのアノード領域、オーミツク接合
を形成するためのカソード領域および半導体集積
回路に組込まれるトランジスタや抵抗等の拡散領
域を露出する孔を設け、アルミニウムより成る電
極配線を設けて形成される半導体集積回路に組込
まれるシヨツトキーバリアダイオードの製造方法
において、 前記アノード領域には多孔状あるいは凹凸状に
設けたシヨツトキー接合のための孔を用意し、 アルミニウムより成る電極配線をオーミツク接
合温度で熱処理することで、同時に、前記カソー
ド領域および前記拡散領域をオーミツク接合し、
前記アノード領域をシヨツトキー接合することを
特徴とした半導体集積回路に組込まれるシヨツト
キーバリアダイオードの製造方法。[Scope of Claims] 1. For forming an anode region and an ohmic junction for forming a Schottky junction of a Schottky barrier diode incorporated in a semiconductor integrated circuit in an insulating film covering the surface of a semiconductor layer consisting of an epitaxial layer. In a method for manufacturing a Schottky barrier diode to be incorporated into a semiconductor integrated circuit, which is formed by forming a hole exposing a cathode region and a diffusion region of a transistor, resistor, etc. to be incorporated in the semiconductor integrated circuit, and providing electrode wiring made of aluminum. At the same time, the anode region is provided with holes for shot-key bonding, which are porous or uneven, and the electrode wiring made of aluminum is heat-treated at an ohmic bonding temperature, thereby simultaneously making the cathode region and the diffusion region ohmic. join,
A method of manufacturing a Schottky barrier diode incorporated into a semiconductor integrated circuit, characterized in that the anode region is subjected to a Schottky junction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57017273A JPS58212184A (en) | 1982-02-04 | 1982-02-04 | Schottky barrier diode associated in semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57017273A JPS58212184A (en) | 1982-02-04 | 1982-02-04 | Schottky barrier diode associated in semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58212184A JPS58212184A (en) | 1983-12-09 |
| JPH048955B2 true JPH048955B2 (en) | 1992-02-18 |
Family
ID=11939359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57017273A Granted JPS58212184A (en) | 1982-02-04 | 1982-02-04 | Schottky barrier diode associated in semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58212184A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0616550B2 (en) * | 1986-03-05 | 1994-03-02 | サンケン電気株式会社 | Shutter-barrier barrier semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5845831B2 (en) * | 1975-06-06 | 1983-10-12 | サンケンデンキ カブシキガイシヤ | Method for manufacturing a shotgun barrier semiconductor device |
| JPS583303Y2 (en) * | 1977-12-16 | 1983-01-20 | ソニー株式会社 | shotgun barrier diode |
-
1982
- 1982-02-04 JP JP57017273A patent/JPS58212184A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58212184A (en) | 1983-12-09 |
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