JPH0510302B2 - - Google Patents
Info
- Publication number
- JPH0510302B2 JPH0510302B2 JP26821786A JP26821786A JPH0510302B2 JP H0510302 B2 JPH0510302 B2 JP H0510302B2 JP 26821786 A JP26821786 A JP 26821786A JP 26821786 A JP26821786 A JP 26821786A JP H0510302 B2 JPH0510302 B2 JP H0510302B2
- Authority
- JP
- Japan
- Prior art keywords
- sic
- oxide film
- tools
- cleaning
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 239000000356 contaminant Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910003925 SiC 1 Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Formation Of Insulating Films (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体基板の熱処理工程に用いられる
炭化硅素（Sic）治工具に関し、特に半導体基板
に適用する前に治工具を清浄にする洗浄方法に関
するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to silicon carbide (SIC) jigs and tools used in the heat treatment process of semiconductor substrates, and in particular, a cleaning method for cleaning the jigs and tools before applying them to semiconductor substrates. It is related to.
従来、この種のSiC治工具は重金属汚染物質が
多く含まれているにもかかわらず洗浄方法は未確
立であり、経験的に酸又はアルカリ洗浄後、酸素
で熱処理を施こしSiC治工具上に酸化膜を成長さ
せる方法や窒素で窒化膜を成長させる方法がとら
れていた。
Conventionally, cleaning methods for this type of SiC jigs and tools have not been established despite the fact that they contain many heavy metal contaminants, and empirically, after acid or alkali cleaning, heat treatment with oxygen is performed to clean the SiC jigs and tools. A method of growing an oxide film or a method of growing a nitride film using nitrogen has been used.
上述した従来の洗浄方法はSiC治工具に含まれ
る過剰シリコンを酸化又は窒化シリコン酸化膜や
シリコン窒化膜によつてSiC治工具に含まれる汚
染物質の外方向拡散を防ぐ構造となつているの
で、シリコン酸化膜の場合汚染物質が酸化膜を通
過したり又ピンホールから拡散が完全に防ぐこと
が出来ないという欠点がある。又シリコン窒化膜
においてはシリコン酸化膜よりも緻密であるため
上述した外方向の拡散は防げるがシリコンに直接
高温窒素と接するとシリコンがダメージを受ける
ため均一な窒化膜を形成することが困難であると
いう欠点がある。
The conventional cleaning method described above is designed to oxidize excess silicon contained in SiC tools or to prevent outward diffusion of contaminants contained in SiC tools by forming a silicon oxide film or a silicon nitride film. A silicon oxide film has the disadvantage that it is not possible to completely prevent contaminants from passing through the oxide film or diffusing through pinholes. In addition, silicon nitride film is denser than silicon oxide film, so it can prevent the above-mentioned outward diffusion, but if silicon comes into direct contact with high-temperature nitrogen, the silicon will be damaged, making it difficult to form a uniform nitride film. There is a drawback.
本発明の治工具の洗浄方法は酸洗浄を行なつた
後に、1200℃以上の高温において酸化性雰囲気中
にて熱処理を行なうことによりSiC治工具の表面
にシリコン酸化膜を成長させ、次いで窒化性雰囲
気中にて熱処理を行なうことにより前述したシリ
コン酸化膜を介して窒素を拡散させシリコン酸化
膜とSiC治工具の界面にシリコン窒化膜を成長さ
せる工程を有している。
The method for cleaning jigs and tools of the present invention is to grow a silicon oxide film on the surface of the SiC jigs by performing acid cleaning and then heat treatment in an oxidizing atmosphere at a high temperature of 1200°C or higher. The method includes a step of diffusing nitrogen through the silicon oxide film described above by performing heat treatment in an atmosphere to grow a silicon nitride film at the interface between the silicon oxide film and the SiC tool.
次に、本発明について図面を参照して説明す
る。
Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例であるウエハーボー
トの断面図である。まず塩酸にてSiC１を洗浄し
表面の汚染物質を除去した後、1270℃酸素雰囲気
中で３時間熱処理を行ないシリコン酸化膜２を形
成し次いで1270℃窒素雰囲気中にて48時間熱処理
を行うことによりシリコン酸化膜２を介して窒素
を拡散させ、シリコン酸化膜２とSiC１との界面
にシリコン窒化膜３を形成する。 FIG. 1 is a sectional view of a wafer boat that is an embodiment of the present invention. First, SiC 1 is cleaned with hydrochloric acid to remove surface contaminants, and then heat treated in an oxygen atmosphere at 1270°C for 3 hours to form a silicon oxide film 2, and then heat treated in a nitrogen atmosphere at 1270°C for 48 hours. Nitrogen is diffused through the silicon oxide film 2 to form a silicon nitride film 3 at the interface between the silicon oxide film 2 and SiC 1.
この様にして洗浄した治工具は汚染物質に対し
て十分緻密なシリコン窒化膜が形成されるため
SiCより汚染物質が外対向拡散せず半導体基板に
悪影響を及ぼさない。 Tools cleaned in this way form a silicon nitride film that is sufficiently dense to resist contaminants.
Compared to SiC, contaminants do not diffuse outward and have no adverse effect on the semiconductor substrate.
またSiCは直接高温の窒素に触れないのでダメ
ージも無く均一なシリコン窒化膜が得られる。 Furthermore, since SiC does not come into direct contact with high-temperature nitrogen, a uniform silicon nitride film can be obtained without damage.
〔実施例 ２〕
他の実施例としてプロセスチユーブに関しては
５％の塩酸ガスを含む酸素を用い、1270℃８時間
洗浄した後酸素雰囲気で３時間、窒素雰囲気で48
時間熱処理を行なう。[Example 2] As another example, a process tube was cleaned using oxygen containing 5% hydrochloric acid gas at 1270°C for 8 hours, then washed in an oxygen atmosphere for 3 hours and then in a nitrogen atmosphere for 48 hours.
Heat treatment is performed for a period of time.
この場合も第１図に示す構造が得られ清浄なプ
ロセスチユーブを得ることができる。 In this case as well, the structure shown in FIG. 1 can be obtained and a clean process tube can be obtained.
以上説明したように本発明は、1200℃以上の温
度で酸化性雰囲気次いで窒化性雰囲気において熱
処理することによりSiC治工具上に緻密でかつ均
一なシリコン窒化膜とシリコン酸化膜が得ること
ができ、半導体処理工程の使用に耐え得る清浄な
SiC治工具を得ることができる効果がある。
As explained above, the present invention makes it possible to obtain a dense and uniform silicon nitride film and silicon oxide film on a SiC tool by heat treatment at a temperature of 1200° C. or higher in an oxidizing atmosphere and then in a nitriding atmosphere. A clean product that can withstand use in semiconductor processing processes.
This has the effect of making it possible to obtain SiC jigs and tools.
第１図は本発明の洗浄方法によつて得られる
SiC治工具の断面図である。
１……SiC、２……シリコン酸化膜、３……シ
リコン窒化膜。
Figure 1 is obtained by the cleaning method of the present invention.
FIG. 3 is a cross-sectional view of the SiC jig. 1...SiC, 2...Silicon oxide film, 3...Silicon nitride film.
Claims (1)
素製治工具の洗浄方法において、酸洗浄を行なう
工程と、前記酸洗浄を行なつた後に1200℃以上の
高温において酸化性雰囲気中にて熱処理する工程
と、次いで1200℃以上で窒素雰囲気中にて熱処理
を行なう工程を有することを特徴とする治工具の
洗浄方法。1. A method for cleaning silicon carbide jigs and tools used in a heat treatment process for semiconductor substrates, which includes the steps of acid cleaning, and after the acid cleaning, heat treatment in an oxidizing atmosphere at a high temperature of 1200°C or higher. 1. A method for cleaning jigs and tools, which comprises the steps of: followed by heat treatment at 1200°C or higher in a nitrogen atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26821786A JPS63123887A (en) | 1986-11-10 | 1986-11-10 | Method of cleaning tools |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26821786A JPS63123887A (en) | 1986-11-10 | 1986-11-10 | Method of cleaning tools |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63123887A JPS63123887A (en) | 1988-05-27 |
| JPH0510302B2 true JPH0510302B2 (en) | 1993-02-09 |
Family
ID=17455540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26821786A Granted JPS63123887A (en) | 1986-11-10 | 1986-11-10 | Method of cleaning tools |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63123887A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3307370B2 (en) | 1999-07-16 | 2002-07-24 | 日本電気株式会社 | Jig for semiconductor manufacturing equipment and method of using the same |
-
1986
- 1986-11-10 JP JP26821786A patent/JPS63123887A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63123887A (en) | 1988-05-27 |
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