JPH0510652B2 - - Google Patents
Info
- Publication number
- JPH0510652B2 JPH0510652B2 JP57140076A JP14007682A JPH0510652B2 JP H0510652 B2 JPH0510652 B2 JP H0510652B2 JP 57140076 A JP57140076 A JP 57140076A JP 14007682 A JP14007682 A JP 14007682A JP H0510652 B2 JPH0510652 B2 JP H0510652B2
- Authority
- JP
- Japan
- Prior art keywords
- conductor layer
- pixel electrode
- wiring conductor
- electrode
- connection electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004020 conductor Substances 0.000 claims description 7
- 239000004973 liquid crystal related substance Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 description 21
- 238000005530 etching Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910018487 Ni—Cr Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】
本発明は液晶表示装置に非線形素子を組合せた
電気光学装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electro-optical device that combines a liquid crystal display device with a nonlinear element.
近年、液晶表示装置の応用が進み、腕時計、電
卓をはじめ各種情報機器にまで用いられるように
なつたが、さらに液晶表示装置の表示容量を増大
させるために金属−絶縁体−金属（Metal−
Insulator−Metal略してMIM）構造を有する非
線形素子（以下MIM素子と呼ぶ）を画素電極と
結合し表示特性を向上させる方法が検討されてい
る。 In recent years, the application of liquid crystal display devices has progressed, and they have come to be used in wristwatches, calculators, and various other information devices.In order to further increase the display capacity of liquid crystal display devices, metal-insulator-metal
A method of improving display characteristics by combining a nonlinear element (hereinafter referred to as an MIM element) having an insulator-metal (MIM) structure with a pixel electrode has been studied.
従来は第１図に断面を含んだMIM素子部分の
見取図、第２図は１画素分のMIM素子及び画素
電極８の平面配置を示すように、基板３上に酸化
膜４を設けエツチストツプとした後、MIM素子
の一方の金属電極５となる金属を形成、パターニ
ングする。次にこの金属電極５の表面に陽極酸化
等で酸化膜６を形成する。次にMIM素子の他方
の金属電極７を形成しさらに透明導電性薄膜で画
素電極８を形成するといつた製造順序を用いてい
た。ここで、MIM素子の金属電極７としては、
素子の特性上Ni−Cr合金やCrを用いることが多
く、その場合金属電極７表面に自然酸化膜が出
来、Ni−Cr合金あるいはCrのままでは画素電極
８との電気的接触が非オーミツクになつてしまう
ために、Ni−Cr合金あるいはCrの上部にAu等の
薄膜を設け多層構造にしてオーム接触としてい
た。しかし、この方法では金属電極７を多層構造
にするために薄膜形成並びにエツチング工程で余
計な工程が必要となり、しかも、Auのエツチン
グの際に断面形状を制御するのが困難で第３図ａ
に示すように段差のついた形状となつてしまい透
明導電性薄膜を形成すると第３図ｂに示すように
被覆性が悪く断線等の問題を発生していた。 Conventionally, an oxide film 4 was provided on the substrate 3 to serve as an etch stop, as shown in Figure 1, which shows a sketch of the MIM element including a cross section, and Figure 2, which shows the planar arrangement of the MIM element and pixel electrode 8 for one pixel. After that, metal that will become one metal electrode 5 of the MIM element is formed and patterned. Next, an oxide film 6 is formed on the surface of this metal electrode 5 by anodic oxidation or the like. Next, the other metal electrode 7 of the MIM element was formed, and then the pixel electrode 8 was formed using a transparent conductive thin film. Here, as the metal electrode 7 of the MIM element,
Due to the characteristics of the element, Ni-Cr alloy or Cr is often used, in which case a natural oxide film is formed on the surface of the metal electrode 7, and if the Ni-Cr alloy or Cr is used as it is, electrical contact with the pixel electrode 8 will be non-ohmic. To avoid aging, a thin film of Au or the like was placed on top of the Ni-Cr alloy or Cr to create a multilayer structure and create ohmic contact. However, this method requires extra steps in thin film formation and etching to form the metal electrode 7 into a multilayer structure, and furthermore, it is difficult to control the cross-sectional shape when etching the Au, as shown in Figure 3a.
As shown in FIG. 3B, the shape is stepped, and when a transparent conductive thin film is formed, coverage is poor and problems such as wire breakage occur as shown in FIG. 3B.
本発明はこのような欠点を除去するために、
MIM素子の一方の金属電極５を形成する際に金
属電極５の金属を用いてMIM素子の他方の金属
電極７と画素電極８を結合するパツド部分を設
け、かつパツド部分の側面形状がテーパー状とす
ることによつて金属電極７と画素電極８の各々の
被覆性を向上させるものである。 In order to eliminate such drawbacks, the present invention has the following features:
When forming one metal electrode 5 of the MIM element, a pad part is provided to connect the other metal electrode 7 of the MIM element and the pixel electrode 8 using the metal of the metal electrode 5, and the side surface shape of the pad part is tapered. By doing so, the coverage of each of the metal electrode 7 and the pixel electrode 8 is improved.
以下実施例に従つて説明する。 Examples will be explained below.
実施例
パイレツクスガラス基板３上にTa2O5及びTa
をスパツタリングによつて形成し、リードライン
及びMIM素子の一方の金属電極５とパツド９を
パターニングする。この時、フレオンと酸素の混
合ガスを用いてドライエツチングを行ないTaの
側面にテーパーがつくようにする〔第４図ａ〕。Example Ta 2 O 5 and Ta on Pyrex glass substrate 3
is formed by sputtering, and the lead line and one metal electrode 5 and pad 9 of the MIM element are patterned. At this time, dry etching is performed using a mixed gas of freon and oxygen to form a taper on the side surface of Ta (Figure 4a).
次にMIM素子の一方の金属電極５表面に陽極
酸化で酸化膜６を形成する。 Next, an oxide film 6 is formed on the surface of one metal electrode 5 of the MIM element by anodic oxidation.
次にNi−Cr合金あるいはCrによつてMIM素子
の他方の金属電極７を形成する〔第４図ｂ〕。さ
らにITO（In2O3＋SnO2）薄膜で画素電極８を形
成する〔第４図ｃ〕。 Next, the other metal electrode 7 of the MIM element is formed of Ni--Cr alloy or Cr (FIG. 4b). Furthermore, a pixel electrode 8 is formed using an ITO (In 2 O 3 +SnO 2 ) thin film [FIG. 4c].
この状態でのMIM素子部の斜視図を第５図に
示す。 A perspective view of the MIM element section in this state is shown in FIG.
このMIM素子側基板３と、ストライプ状の電
極を持つた対向基板とに液晶の配向処理を行ない
数μm〜十数μmの間隙を持たせて接着し液晶を封
入した後偏光板を貼つて電気光学装置とする。 This MIM element side substrate 3 and a counter substrate with striped electrodes are subjected to liquid crystal alignment treatment and bonded with a gap of several μm to more than 10 μm, and after filling the liquid crystal, a polarizing plate is pasted and electricity is generated. It is an optical device.
本発明によれば次の効果を有する。 According to the present invention, the following effects are achieved.
すなわち、非線形素子の近傍の、非線形素子と
画素電極の間に、非線形素子を構成する配線導体
層と同一工程で形成された島状のパツドを設けた
ことにより、非線形素子の幅が数ミクロンであつ
てもマスク通りの形状が歩留り良く形成できる。 In other words, by providing an island-shaped pad near the nonlinear element and between the nonlinear element and the pixel electrode, which is formed in the same process as the wiring conductor layer that constitutes the nonlinear element, the width of the nonlinear element can be reduced to a few microns. Even if there is a problem, the shape according to the mask can be formed with a high yield.
なぜならば、非線形素子のリード配線の配線導
体層からなる一方の電極をホトエツチング工程で
形成するときに、非線形素子の近傍に非線形素子
の配線導体と同じ材質のパツドが設けられたこと
によつて、非線形素子部近傍のエツチング面積が
小さくなるため、非線形素子部の近傍にパツドが
ない場合に比べて、エツチングレートが遅くな
り、非線形素子のエツチングが緩和され、急激な
エツチングによる過剰エツチングがなくなるから
である。 This is because when one electrode of the wiring conductor layer of the lead wiring of the nonlinear element is formed in the photoetching process, a pad made of the same material as the wiring conductor of the nonlinear element is provided near the nonlinear element. Because the etching area near the nonlinear element becomes smaller, the etching rate becomes slower than when there is no pad near the nonlinear element, the etching of the nonlinear element is relaxed, and excessive etching due to rapid etching is eliminated. be.
更に、島状のパツド上で接続電極の他方の端部
と画素電極とが島状のパツドを介して電気的に接
続されてなるようにしたから、接続電極の他方の
端子と画素電極との電気的接続を確実なものにで
きる。 Furthermore, since the other end of the connection electrode and the pixel electrode are electrically connected on the island-shaped pad via the island-shaped pad, the connection between the other end of the connection electrode and the pixel electrode is Electrical connection can be ensured.
また、MIM素子の特性や金属電極７と画素電
極８との電気的接触等の面からは金属電極７のエ
ツチング形状はどのような状態でも良いと言える
が、MIM素子と液晶間のパツシベーシヨンを考
えた場合には、パツシベーシヨン膜の被覆性を良
くするために金属電極７もテーパー状にエツチン
グすることが望ましい。 Furthermore, from the viewpoint of the characteristics of the MIM element and the electrical contact between the metal electrode 7 and the pixel electrode 8, it can be said that the etched shape of the metal electrode 7 can be in any shape, but considering the passivation between the MIM element and the liquid crystal, In such a case, it is desirable that the metal electrode 7 is also etched into a tapered shape in order to improve the coverage of the passivation film.
第１図及び第２図は従来例におけるMIM素子
及び画素電極の関係を示す図である。第３図は従
来例におけるMIM素子の一方の金属電極７ａ，
７ｂと画素電極８の断面形状を示す図である。第
４図は本発明における製造法を説明する図であ
る。第５図は本発明におけるMIM素子と画素電
極の関係を示す図である。
FIGS. 1 and 2 are diagrams showing the relationship between MIM elements and pixel electrodes in a conventional example. FIG. 3 shows one metal electrode 7a of the MIM element in a conventional example.
7b and a cross-sectional shape of the pixel electrode 8. FIG. FIG. 4 is a diagram illustrating the manufacturing method according to the present invention. FIG. 5 is a diagram showing the relationship between the MIM element and the pixel electrode in the present invention.
Claims (1)
され、少なくとも一方の基板上には、配線導体層
により形成されるリード配線と、該配線導体層を
被覆してなる絶縁膜と、一方の端部を該絶縁膜に
接してなる接続電極と、該接続電極の他方の端部
に接続された画素電極とを有し、該リード配線の
配線導体層−該絶縁膜−該接続電極により非線形
素子が形成されてなる電気光学表示装置におい
て、該非線形素子の近傍に、該非線形素子を構成
する配線導体層と同一工程で形成された側面がテ
ーパ形状の島状のパツドが設けられ、該島状のパ
ツド上で該接続電極の他方の端部と該画素電極と
が該島状のパツドを介して電気的に接続されてな
ることを特徴とする液晶表示装置。1. An electro-optical material is sealed in a pair of opposing substrates, and on at least one of the substrates, a lead wiring formed by a wiring conductor layer, an insulating film covering the wiring conductor layer, and one end are provided. It has a connection electrode whose portion is in contact with the insulating film, and a pixel electrode connected to the other end of the connection electrode, and the wiring conductor layer of the lead wiring, the insulating film, and the connection electrode form a nonlinear element. In an electro-optical display device in which a pad is formed, an island-shaped pad with a tapered side surface is provided near the non-linear element and is formed in the same process as the wiring conductor layer constituting the non-linear element. 1. A liquid crystal display device, wherein the other end of the connection electrode and the pixel electrode are electrically connected to each other via the island-shaped pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57140076A JPS5929288A (en) | 1982-08-12 | 1982-08-12 | Electrooptic apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57140076A JPS5929288A (en) | 1982-08-12 | 1982-08-12 | Electrooptic apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5929288A JPS5929288A (en) | 1984-02-16 |
| JPH0510652B2 true JPH0510652B2 (en) | 1993-02-10 |
Family
ID=15260400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57140076A Granted JPS5929288A (en) | 1982-08-12 | 1982-08-12 | Electrooptic apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5929288A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH084498Y2 (en) * | 1990-12-12 | 1996-02-07 | 株式会社エスイー | Anti-corrosion equipment for tensile materials |
-
1982
- 1982-08-12 JP JP57140076A patent/JPS5929288A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5929288A (en) | 1984-02-16 |
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