JPH0511294B2 - - Google Patents
Info
- Publication number
- JPH0511294B2 JPH0511294B2 JP59179041A JP17904184A JPH0511294B2 JP H0511294 B2 JPH0511294 B2 JP H0511294B2 JP 59179041 A JP59179041 A JP 59179041A JP 17904184 A JP17904184 A JP 17904184A JP H0511294 B2 JPH0511294 B2 JP H0511294B2
- Authority
- JP
- Japan
- Prior art keywords
- heating element
- element electrode
- substrate
- light
- light guide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/31—Digital deflection, i.e. optical switching
- G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
- G02F1/3137—Digital deflection, i.e. optical switching in an optical waveguide structure with intersecting or branching waveguides, e.g. X-switches and Y-junctions
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、温度変化を与えることで光の進路を
変化させる熱光スイツチに関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a thermal light switch that changes the path of light by applying a temperature change.
光信号などの進路を切り換える光スイツチとし
て、機械式のものが知られているが、素子が大型
で調整が面倒なうえ、動作速度が遅い。これに対
し導波型の光スイツチは、平面上にフオトリソグ
ラフイ技術を用いて形成できるため量産タイプで
あり、各種機能を一体化することができて、光学
系の調整が容易である。また導波路型光スイツチ
として通常使われているLiNbO3光スイツチで
は、電極間に電圧を印加することで光の進路を切
り換えるもので、高速動作が可能である。第３図
はこの導波型光スイツチの一例を示す平面図であ
る。この導波型光スイツチは、ＹカツトLiNbO3
（ニオブ酸リチウム）等の単結晶基板１上にTi
（チタン）の熱拡散により、幅8μm、厚さ4μm程
度の高屈折率の交差形導波路２ａ，２ｂを形成
し、該交差部２ｃ上に、交差点の中心を境にし
て、例えば４〜6μm程度のギヤツプＧをおいて、
平行状態に対向している平行電極３ａ，３ｂを形
成した構成になつている。
Mechanical optical switches are known for switching the path of optical signals, but the elements are large and difficult to adjust, and the operating speed is slow. On the other hand, waveguide type optical switches can be formed on a flat surface using photolithography technology, so they can be mass-produced, various functions can be integrated, and the optical system can be easily adjusted. In addition, LiNbO 3 optical switches, which are commonly used as waveguide optical switches, switch the path of light by applying voltage between electrodes, allowing high-speed operation. FIG. 3 is a plan view showing an example of this waveguide type optical switch. This waveguide type optical switch is made of Y-cut LiNbO 3
(lithium niobate) etc. on a single crystal substrate 1.
By thermal diffusion of (titanium), high refractive index crossing waveguides 2a and 2b with a width of 8 μm and a thickness of about 4 μm are formed, and on the crossing portion 2c, a width of 4 to 6 μm, for example, is formed with the center of the intersection as a border. With a gap G of about
It has a configuration in which parallel electrodes 3a and 3b are formed facing each other in a parallel state.
電極に電圧を印加することにより、電極間に電
界が加わり、この部分の屈折率が変化する。この
ような交差導波路では、交差角、ガイド幅、屈折
率などのパラメータの選択により、一方の入射線
路から入射した光を出射側の２つの線路の一方に
集中して導波させることが可能である。このた
め、電極３ａ，３ｂに電圧を印加し、電極間の屈
折率を変化させることで直進または分岐路に光パ
ワーをスイツチすることができる。 By applying a voltage to the electrodes, an electric field is applied between the electrodes, and the refractive index of this portion changes. In such crossed waveguides, by selecting parameters such as the crossing angle, guide width, and refractive index, it is possible to concentrate and guide the light incident from one input line to one of the two output lines. It is. Therefore, by applying a voltage to the electrodes 3a and 3b and changing the refractive index between the electrodes, it is possible to switch the optical power to a straight path or a branch path.
この導波型光スイツチを光通信などに利用する
場合、このような導波型光スイツチを１つの基板
に複数形成することが多いが、前記のように基板
１として単結晶の材料が必要なため、多数の光ス
イツチで構成される大型の装置を得ることが困難
である。 When using this waveguide type optical switch for optical communication, etc., a plurality of such waveguide type optical switches are often formed on one substrate, but as mentioned above, a single crystal material is required for the substrate 1. Therefore, it is difficult to obtain a large-sized device composed of a large number of optical switches.
これに対し結晶を使用しないで光スイツチ機能
を実現できるものとして、ガラス基板に光ガイド
を形成して成る熱光スイツチ（サーモオプテイカ
ルスイツチ）が知られている。この熱光スイツチ
は、基板材料の大きさの制約は受けないので、大
型化が可能であるが、多数の光スイツチを接近し
て配設し集積化すると、隣接する光スイツチの温
度の影響を受け易く、温度の影響を受けないよう
に各光スイツチの間隔を拡げると装置が大型とな
り、また隣接する光スイツチが冷却してから駆動
するように駆動周期を長くすると、動作速度が低
下するという欠点がある。 On the other hand, a thermo-optical switch in which a light guide is formed on a glass substrate is known as a device that can realize an optical switch function without using a crystal. This thermo-optical switch is not limited by the size of the substrate material, so it can be made larger. However, when a large number of optical switches are placed close together and integrated, the influence of the temperature of adjacent optical switches is reduced. In order to avoid the effects of temperature, increasing the distance between each optical switch would result in a larger device, and lengthening the drive cycle so that adjacent optical switches are cooled before they are activated would reduce operating speed. There are drawbacks.
本発明の技術的課題は、大型化が容易な熱光ス
イツチにおけるこのような問題を解消し、多数の
光スイツチを接近して高密度に配置しても、動作
速度を低下させることなしに駆動できるようにす
ることにある。
The technical problem of the present invention is to solve these problems in thermo-optical switches that can easily be made large, and to drive them without reducing the operating speed even when a large number of optical switches are placed close together and at high density. The goal is to make it possible.
この技術的課題を解決するために講じた本発明
による技術的手段は、温度変化によつて光の屈折
率が変化する材料からなる光ガイドと、該光ガイ
ドに温度変化を与える発熱体電極とを有する熱光
スイツチであつて、金属ないし半導体などの熱伝
導性に優れた材料からなる基板上に、電気的絶縁
体から成る第１のスペーサ層を設けてその上に前
該光ガイドの上に、第２のスペーサ層を介して発
熱体電極７を設けることで、発熱体電極７を最外
層に配設したこと、該発熱体電極７の片方の端子
を直接基板４に接続したこと、を特徴とする構成
になつている。
The technical means of the present invention taken to solve this technical problem includes a light guide made of a material whose refractive index of light changes with temperature changes, and a heating element electrode that changes the temperature of the light guide. A first spacer layer made of an electrical insulator is provided on a substrate made of a material with excellent thermal conductivity such as a metal or a semiconductor, and a first spacer layer made of an electrical insulator is provided on the substrate made of a material with excellent thermal conductivity such as a metal or a semiconductor, The heating element electrode 7 is disposed on the outermost layer by providing the heating element electrode 7 via the second spacer layer, and one terminal of the heating element electrode 7 is directly connected to the substrate 4. The structure is characterized by the following.
この技術的手段によれば、発熱体電極に通電し
てない状態では、光ガイドに入射して来た光はそ
の光ガイドを直進するが、発熱体電極に通電し
て、その下方の光ガイドの交差部が加熱される
と、該交差部の屈折率が低下して、入射光は他方
の光ガイドに導波される。また発熱体電極への通
電を止めると、入射光は再び元の光ガイドに切り
換わつて直進する。このスイツチでは、屈折率
Δnの変化に対して直進状態と分岐状態が周期的
に現れるため、必ずしも通電のオフ状態をスイツ
チの動作状態として使用する必要はない。
According to this technical means, when the heating element electrode is not energized, the light incident on the light guide travels straight through the light guide, but when the heating element electrode is energized, the light guide below it When the intersection is heated, the refractive index of the intersection decreases and the incident light is guided into the other light guide. Furthermore, when the electricity to the heating element electrode is stopped, the incident light switches back to the original light guide and travels straight. In this switch, a straight state and a branched state appear periodically with respect to changes in the refractive index Δn, so it is not necessarily necessary to use the energized off state as the operating state of the switch.
このように発熱体電極で光ガイドの交差部に温
度変化を与えることで、光スイツチ動作が行われ
る。本発明の場合、光ガイドや発熱体電極は、金
属や半導体などのような熱の良導体からなる基板
上に設けられており、加えて発熱体電極７が最外
層となるように積層されているため、発熱体電極
への通電を停止した際の発熱体電極７や光ガイド
交差部の放熱が迅速に行われる。そのため、交差
部の温度変化によるスイツチング動作を、短い周
期で高速に行なうことができる。 By applying a temperature change to the intersection of the light guides using the heating element electrode in this way, a light switch operation is performed. In the case of the present invention, the light guide and the heating element electrode are provided on a substrate made of a good thermal conductor such as metal or semiconductor, and in addition, the heating element electrode 7 is laminated so as to be the outermost layer. Therefore, heat is quickly radiated from the heating element electrode 7 and the light guide intersection when the electricity supply to the heating element electrode is stopped. Therefore, the switching operation due to the temperature change at the intersection can be performed at high speed in a short cycle.
このように、熱光スイツチ部の熱が効率的に放
熱されるため、各熱光スイツチを接近して高密度
に配設しても、隣接する熱光スイツチに及ぼす熱
的な影響は少なく、また発熱体電極７の片方の端
子を直接基板４に接続することによつて、配線パ
ターンが簡素化され、各熱光スイツチを接近して
高密度に配設することが可能となる。 In this way, the heat in the thermo-optic switch section is efficiently dissipated, so even if the thermo-optical switches are placed close together in high density, there is little thermal influence on adjacent thermo-optic switches. Furthermore, by directly connecting one terminal of the heating element electrode 7 to the substrate 4, the wiring pattern is simplified, and it becomes possible to arrange the respective thermo-light switches close to each other with high density.
次に本発明による熱光スイツチが実際上どのよ
うに具体化されるかを実施例で説明する。第１図
は本発明による熱光スイツチの実施例を示す斜視
図、第２図は同熱光スイツチの断面図である。４
は基板であり、金属やシリコンなどの半導体のよ
うな熱伝導性に優れた材料でできている。この基
板４上に、SiO2などのような電気的に絶縁性を
有する材料から成る第１のスペーサ層５が、蒸着
やスパツタなどの手法で形成されている。そして
このスペーサ層５の上に、光ガイドを構成するた
めのコア層２が形成されている。このコア層２
を、第３図や第１図のようにＸ字状に交差させる
ことで、光ガイド２Ａ，２Ｂが形成されている。
この光ガイド２Ａ，２Ｂの材料としては、屈折率
が大きく且つ温度変化によつて屈折率が変化する
材料、例えばSiO2にTiをドープして成るTiSiO2
などのようなガラス系の材料が適している。光ガ
イド２Ａ，２Ｂの上には、更に第２のスペーサ層
６が、電気的に絶縁性をもつたSiO2などの蒸着
ないしスパツタなどの手法で形成されている。第
１図では、この第２のスペーサ層６を省略した状
態で表されている。第２のスペーサ層６を挟んで
光ガイド２Ａ，２Ｂの交差部の真上に、発熱体電
極７が設けられている。この発熱体電極７は、チ
タン（Ti）やタンタル（Ta）、ニクロム（Ni−
Cr）などのように電気抵抗の大きい材料が適し
ている。発熱体電極７は、光ガイド２Ａと２Ｂと
の交差部に沿う形で延びており、一端にリードパ
ターン８１を介して端子９１が接続されている。
発熱体電極７の他端は、リードパターン８２を介
して前記基板４に接続されている。したがつて第
２のスペーサ層６には、リードパターン８２を通
すための窓穴１０が開けられれている。
Next, how the thermo-light switch according to the present invention is actually implemented will be explained by way of an example. FIG. 1 is a perspective view showing an embodiment of a thermo-light switch according to the present invention, and FIG. 2 is a sectional view of the thermo-light switch. 4
is the substrate, which is made of a material with excellent thermal conductivity such as metal or a semiconductor such as silicon. A first spacer layer 5 made of an electrically insulating material such as SiO 2 is formed on this substrate 4 by a method such as vapor deposition or sputtering. A core layer 2 for forming a light guide is formed on this spacer layer 5. This core layer 2
The light guides 2A and 2B are formed by intersecting each other in an X-shape as shown in FIGS. 3 and 1.
The material for the light guides 2A and 2B is a material that has a large refractive index and whose refractive index changes with temperature changes, such as TiSiO 2 made by doping SiO 2 with Ti.
Glass-based materials such as A second spacer layer 6 is further formed on the light guides 2A, 2B by a method such as vapor deposition or sputtering of electrically insulating SiO 2 or the like. In FIG. 1, this second spacer layer 6 is omitted. A heating element electrode 7 is provided directly above the intersection of the light guides 2A and 2B with the second spacer layer 6 in between. This heating element electrode 7 is made of titanium (Ti), tantalum (Ta), nichrome (Ni-
Materials with high electrical resistance such as Cr) are suitable. The heating element electrode 7 extends along the intersection of the light guides 2A and 2B, and a terminal 91 is connected to one end via a lead pattern 81.
The other end of the heating element electrode 7 is connected to the substrate 4 via a lead pattern 82. Therefore, the second spacer layer 6 is provided with a window hole 10 through which the lead pattern 82 passes.
この構成において、クラツド層の役目をする第
１のスペート層５および第２のスペーサ層６よ
り、コア層の役目をする光ガイド２Ａ，２Ｂの屈
折率が大きいため、レーザダイオードLDから光
信号を光ガイド２Ｂに入射させると、該光ガイド
２Ｂを直進して、出力側の光ガイド２B0から出
射する。ところが発熱体電極７に通電して発熱さ
せると、光ガイド２Ａ，２Ｂの交差部が加熱され
ることで、交差部の屈折率が変化しレーザダイオ
ードLDから入射した信号光は、もう一方の光ガ
イド２A0に切り換わる。発熱体電極７への通電
を止めて放熱させると、光ガイド２Ａ，２Ｂの交
差部の温度が低下し、信号光の進路は再び元の光
ガイド２B0側に切り換わる。 In this configuration, since the refractive index of the light guides 2A and 2B, which serve as core layers, is higher than that of the first spat layer 5 and second spacer layer 6, which serve as cladding layers, the optical signal from the laser diode LD is When the light enters the light guide 2B, it travels straight through the light guide 2B and exits from the output side light guide 2B0 . However, when electricity is applied to the heating element electrode 7 to generate heat, the intersection of the light guides 2A and 2B is heated, and the refractive index of the intersection changes, causing the signal light incident from the laser diode LD to become different from the other light. Guide 2A Switches to 0 . When the electricity to the heating element electrode 7 is stopped and heat is radiated, the temperature at the intersection of the light guides 2A and 2B decreases, and the path of the signal light is switched back to the original light guide 2B0 side.
このように発熱体電極７への通電をオン・オフ
することで、光ガイド２Ａ，２Ｂの交差部におけ
る光の屈折率を変化させ、光スイツチ作用を行わ
せる。したがつて光スイツチを高速動作させるに
は、交差部の温度変化が高速で行われることが必
要である。すなわち短時間に交差部が所定温度ま
で上昇したり、所定温度まで低下することが必要
である。 By turning on and off the power supply to the heating element electrode 7 in this way, the refractive index of light at the intersection of the light guides 2A and 2B is changed, and an optical switch effect is performed. Therefore, in order to operate the optical switch at high speed, it is necessary to change the temperature at the intersection at high speed. That is, it is necessary for the intersection to rise to a predetermined temperature or to fall to a predetermined temperature in a short period of time.
本発明では、光ガイド２Ａ，２Ｂを形成する基
板４として、金属や半導体などのような熱伝導に
優れた材料を使用しているため、発熱体電極７へ
の通電を停止すると、発熱体電極７および光ガイ
ド２Ａ，２Ｂの交差部の熱は、熱伝導に優れた基
板４によつて急速に放熱される。しかも、発熱体
電極７が最外層となるように積層されているた
め、発熱体電極７や光ガイド２Ａ，２Ｂの交差部
の光スイツチ動作部の放熱が早まり、光スイツチ
の駆動周期を短くして高速動作させることができ
る。また多数の光スイツチを接近して配設し集積
化しても、光ガイド２Ａ，２Ｂの交差部の放熱が
高速で行われるので、隣接する光スイツチへの影
響が抑制され、この点からも駆動周期を短くし、
高速化できる。ちなみに光ガイド２Ａ，２Ｂのパ
ターンの厚さを0.5μm〜10μm程度と薄くし、か
つ第１のスペーサ層５を１〜3μm程度とすること
で、交差部の放熱はmicro.sec.のオーダで高速放
熱されることが確認された。冷却水を循環させて
強制冷却する冷却装置に基板４を重ねて熱的に結
合すると、交差部の放熱速度は更に高速となる。 In the present invention, since a material with excellent thermal conductivity such as metal or semiconductor is used as the substrate 4 forming the light guides 2A and 2B, when the electricity to the heating element electrode 7 is stopped, the heating element electrode 7 7 and the intersection of the light guides 2A and 2B is rapidly dissipated by the substrate 4 which has excellent heat conduction. Moreover, since the heating element electrode 7 is laminated as the outermost layer, heat dissipation from the optical switch operation part at the intersection of the heating element electrode 7 and the light guides 2A and 2B is accelerated, and the driving cycle of the optical switch is shortened. can be operated at high speed. Furthermore, even if a large number of optical switches are placed close together and integrated, heat is dissipated at a high speed at the intersection of the optical guides 2A and 2B, so the influence on adjacent optical switches is suppressed. shorten the cycle,
It can be made faster. By the way, by reducing the thickness of the patterns of the light guides 2A and 2B to about 0.5 μm to 10 μm and making the first spacer layer 5 about 1 to 3 μm, the heat dissipation at the intersection can be on the order of micro.sec. It was confirmed that heat is dissipated quickly. When the substrate 4 is stacked and thermally coupled to a cooling device that circulates cooling water for forced cooling, the heat dissipation rate at the intersection becomes even faster.
また図示例のように、光ガイド２Ａ，２Ｂの交
差部の付近で第１のスペーサ層５に窓穴１０を開
け、各発熱体電極７の片方の端子をコモン端子と
して、直接基板４に接続することで、各光スイツ
チを小型化でき、総ての光スイツチをこのような
構成とすることで、各光スイツチを極めて接近し
て配設し、高集積化が可能となる。かつ高集積化
しても隣接光スイツチとの間の熱的影響が解消さ
れることで、高速かつ高集積の光スイツチ装置を
実現できる。そして単結晶を使用する光スイツチ
と違つて、金属ないし半導体基板を使用できるの
で、極めて大型の装置が得られる。 Further, as shown in the illustrated example, a window hole 10 is made in the first spacer layer 5 near the intersection of the light guides 2A and 2B, and one terminal of each heating element electrode 7 is connected directly to the substrate 4 as a common terminal. By doing so, each optical switch can be miniaturized, and by configuring all the optical switches in this manner, each optical switch can be disposed extremely close to each other, making it possible to achieve high integration. Furthermore, even if the optical switch is highly integrated, the thermal influence between adjacent optical switches can be eliminated, making it possible to realize a high-speed and highly integrated optical switch device. Unlike optical switches that use single crystals, metal or semiconductor substrates can be used, so an extremely large device can be obtained.
更に第４図に示すように、リードパターンを用
いないで、窓穴１０中で発熱体金属７を基板４と
直接接着させることにより、さらに放熱効果を増
大させ、高速のスイツチングを可能とすることが
できる。 Furthermore, as shown in FIG. 4, by directly bonding the heating element metal 7 to the substrate 4 in the window hole 10 without using a lead pattern, the heat dissipation effect is further increased and high-speed switching is made possible. I can do it.
以上のように本発明によれば、光スイツチの基
板材料として、単結晶を使用しないで済むので、
基板の制約を受けることがなく大型化が可能であ
る。また、基板の放熱効果が大きく、加えて基板
４上に、第１のスペーサ層５、光ガイド２、第２
のスペーサ層６、発熱体電極７の順に積層するこ
とで、発熱体電極７が最外層となつているので、
基板中に発熱体電極を埋め込む構造に比べて発熱
体電極７付近の放熱が効率的に行われる。そのた
め、熱光スイツチ部の放熱が迅速に行われ、スイ
ツチング動作の高速化が可能となる。しかも、発
熱体電極７の片方の端子を直接基板４に接続する
ことで、配線パターンを短くかつ簡素化でき、一
つの基板上に多数の熱光スイツチを接近して配設
し、高集積化を実現できる。
As described above, according to the present invention, there is no need to use single crystal as the substrate material of the optical switch.
It is possible to increase the size without being limited by the substrate. In addition, the heat dissipation effect of the substrate is large, and in addition, on the substrate 4, the first spacer layer 5, the light guide 2, the second
By laminating the spacer layer 6 and the heating element electrode 7 in this order, the heating element electrode 7 becomes the outermost layer.
Heat dissipation near the heating element electrode 7 is performed more efficiently than in a structure in which the heating element electrode is embedded in the substrate. Therefore, heat dissipation from the thermo-optical switch section is performed quickly, and the switching operation can be performed at high speed. Furthermore, by directly connecting one terminal of the heating element electrode 7 to the substrate 4, the wiring pattern can be shortened and simplified, and a large number of thermo-light switches can be disposed close to each other on one substrate, resulting in high integration. can be realized.
第１図は本発明による熱光スイツチの実施例を
示す斜視図、第２図は同熱光スイツチの要部断面
図、第４図は本発明による熱光スイツチの他の実
施例を示す斜視図と平面図、第３図は従来の導波
型光スイツチの平面図である。
図において、４は基板、５は第１のスペーサ
層、６は第２のスペーサ層、７は発熱体電極、８
１，９１はリードパターン、９１は端子、１０は
窓穴をそれぞれ示す。
FIG. 1 is a perspective view showing an embodiment of a thermo-light switch according to the present invention, FIG. 2 is a sectional view of a main part of the thermo-light switch, and FIG. 4 is a perspective view showing another embodiment of the thermo-light switch according to the present invention. FIG. 3 is a plan view of a conventional waveguide type optical switch. In the figure, 4 is a substrate, 5 is a first spacer layer, 6 is a second spacer layer, 7 is a heating element electrode, and 8
1 and 91 are lead patterns, 91 is a terminal, and 10 is a window hole, respectively.
Claims (1)
からなる光ガイドと、該光ガイドに温度変化を与
える発熱体電極とを有する熱光スイツチであつ
て、 金属ないし半導体などの熱伝導性に優れた材料
からなる基板４上に、電気的絶縁体から成る第１
のスペーサ層５を設けて、その上に前記光ガイド
２を形成し、該光ガイド２の上に、第２のスペー
サ層６を介して発熱体電極７を設けることで、発
熱体電極７を最外層に配設したこと、 該発熱体電極７の片方の端子を直接基板４に接
続したこと、 を特徴とする熱光スイツチ。 ２ 前記の発熱体電極が前記の金属ないし半導体
などから成る基板と部分的に直接接着しているこ
とを特徴とする熱光スイツチ。[Scope of Claims] 1. A thermo-optical switch comprising a light guide made of a material whose refractive index of light changes with temperature changes, and a heating element electrode that changes the temperature of the light guide, which is made of metal or semiconductor. A first substrate made of an electrical insulator is placed on a substrate 4 made of a material with excellent thermal conductivity such as
A spacer layer 5 is provided, the light guide 2 is formed thereon, and a heating element electrode 7 is provided on the light guide 2 with a second spacer layer 6 interposed therebetween. A thermo-optical switch characterized by: being arranged on the outermost layer, and one terminal of the heating element electrode 7 being directly connected to the substrate 4. 2. A thermo-optical switch characterized in that the heating element electrode is partially directly bonded to the substrate made of the metal or semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17904184A JPS6156329A (en) | 1984-08-28 | 1984-08-28 | Thermo-optical switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17904184A JPS6156329A (en) | 1984-08-28 | 1984-08-28 | Thermo-optical switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6156329A JPS6156329A (en) | 1986-03-22 |
| JPH0511294B2 true JPH0511294B2 (en) | 1993-02-15 |
Family
ID=16059080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17904184A Granted JPS6156329A (en) | 1984-08-28 | 1984-08-28 | Thermo-optical switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6156329A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8702804A (en) * | 1987-11-23 | 1989-06-16 | Nederlanden Staat | METHOD AND APPARATUS FOR CONTROLLING A LIGHT BEAM |
| EP1178349A1 (en) * | 2000-08-02 | 2002-02-06 | Corning Incorporated | Integrated thermo-optical silica switch |
| JP2003005232A (en) * | 2001-04-18 | 2003-01-08 | Ngk Insulators Ltd | Optical device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5893035A (en) * | 1981-11-28 | 1983-06-02 | Nippon Telegr & Teleph Corp <Ntt> | Optical switch |
-
1984
- 1984-08-28 JP JP17904184A patent/JPS6156329A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6156329A (en) | 1986-03-22 |
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