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JPH051207B2 - - Google Patents
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JPH051207B2 - - Google Patents

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Publication number
JPH051207B2
JPH051207B2 JP4142286A JP4142286A JPH051207B2 JP H051207 B2 JPH051207 B2 JP H051207B2 JP 4142286 A JP4142286 A JP 4142286A JP 4142286 A JP4142286 A JP 4142286A JP H051207 B2 JPH051207 B2 JP H051207B2
Authority
JP
Japan
Prior art keywords
reaction
silicon
chlorine
reactor
raw material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4142286A
Other languages
Japanese (ja)
Other versions
JPS62202812A (en
Inventor
Masaaki Ito
Tatsuhiko Hatsutori
Yasuhisa Miwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toagosei Co Ltd
Original Assignee
Toagosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toagosei Co Ltd filed Critical Toagosei Co Ltd
Priority to JP4142286A priority Critical patent/JPS62202812A/en
Priority to DE19863623493 priority patent/DE3623493A1/en
Publication of JPS62202812A publication Critical patent/JPS62202812A/en
Publication of JPH051207B2 publication Critical patent/JPH051207B2/ja
Granted legal-status Critical Current

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Description

【発明の詳細な説明】 (イ) 発明の目的 〔産業上の利用分野〕 本発明はシリコン系半導体、アモルフアスシリ
コン等の製造原料用特殊ガスとして最近特に注目
を浴びているジシランの製造原料として、極めて
有用である六塩化珪素の製造方法に関するもので
ある。
[Detailed Description of the Invention] (a) Purpose of the Invention [Field of Industrial Application] The present invention is intended to be used as a raw material for producing disilane, which has recently attracted particular attention as a special gas for producing raw materials for silicon-based semiconductors, amorphous silicon, etc. , relates to an extremely useful method for producing silicon hexachloride.

〔従来の技術〕[Conventional technology]

六塩化珪素は、例えば水素気流中で熱分解さ
せ、多結晶シリコン、単結晶シリコンを製造した
り、また耐熱性、耐摩耗性、耐蝕性等に優れた
SiC、Si3N4の化学蒸着膜あるいは粉末の製造に、
更には有機珪素化合物の合成にと、従来の珪素塩
化物にはない特長を有するものとして、今後の需
要の大きな増加が期待し得るものである。
Silicon hexachloride can be thermally decomposed in a hydrogen stream to produce polycrystalline silicon or single crystal silicon, or it can be used to produce polycrystalline silicon or single crystal silicon, which has excellent heat resistance, abrasion resistance, corrosion resistance, etc.
For the production of SiC, Si 3 N 4 chemical vapor deposition films or powders,
Furthermore, as it has features not found in conventional silicon chlorides for the synthesis of organosilicon compounds, demand for it can be expected to increase significantly in the future.

六塩化珪素の製造方法は、通常フエロシリコ
ン、カルシユウムシリコン、マグネシウムシリコ
ン等の珪素合金あるいは金属珪素を、高温で塩素
と反応させることにより行われる(米国特許第
2602728号明細書、同第2621111号明細書)。
The manufacturing method of silicon hexachloride is usually carried out by reacting silicon alloys such as ferrosilicon, calcium silicon, magnesium silicon, etc. or metallic silicon with chlorine at high temperature (U.S. Patent No.
2602728, 2621111).

上記反応を行うに際し、従来固定層式反応器あ
るいは流動層式反応器が用いられて来たが、極め
て発熱の大きな固気反応であるため、六塩化珪素
の生成に好適な反応条件をコントロールすること
がむずかしく、工業的な規模で行なうには未完成
な状況にあつた。
Conventionally, a fixed bed reactor or a fluidized bed reactor has been used to carry out the above reaction, but since it is a solid-gas reaction that generates an extremely large amount of heat, it is necessary to control the reaction conditions suitable for the production of silicon hexachloride. The process was difficult, and the situation was too unfinished to be carried out on an industrial scale.

即ち反応条件を好適な条件にコントロール出来
ないと、六塩化珪素以外に四塩化珪素、あるいは
八塩化珪素以上の高次珪素塩化物も生成し、六塩
化珪素の収率は著しく低下する。
That is, if the reaction conditions cannot be controlled to suitable conditions, silicon tetrachloride or higher silicon chloride higher than silicon octachloride will be produced in addition to silicon hexachloride, and the yield of silicon hexachloride will be significantly reduced.

〔発明が解決しようとする問題〕[Problem that the invention seeks to solve]

珪素合金または金属珪素(以下珪素原料とい
う)と塩素との反応は、従来主に固定層式反応器
に珪素原料を充填した後、高温で塩素と反応させ
る方法が行なわれていたが、工業上次の様な問題
があつた。
Conventionally, the reaction between silicon alloy or metallic silicon (hereinafter referred to as silicon raw material) and chlorine was carried out by filling a fixed bed reactor with silicon raw material and then reacting it with chlorine at high temperature. I had the following problem.

(1) 反応が発熱反応である為、反応中、反応器内
に温度分布が生じ、均一に温度をコントロール
することが難しい。
(1) Since the reaction is exothermic, temperature distribution occurs within the reactor during the reaction, making it difficult to control the temperature uniformly.

(2) 反応の際副生する、塩化鉄、塩化カルシユウ
ム等の副生塩化物による体積膨張の為、反応残
渣が固結し、反応後の反応残渣の取り出しが困
難である。
(2) Due to volume expansion due to by-product chlorides such as iron chloride and calcium chloride, which are produced during the reaction, the reaction residue solidifies, making it difficult to remove the reaction residue after the reaction.

(3) 珪素原料の反応率が低い。(3) The reaction rate of silicon raw material is low.

従つて、固定層式反応器では反応器の大きさが
限定される等、工業的規模で実施するには種々問
題があつた。
Therefore, fixed bed reactors have various problems in implementation on an industrial scale, such as the size of the reactor being limited.

上記問題点のいくつかは流動層式反応器を用い
ることによりある程度改善され得る。例えば温度
の均一性は保ち易くなる。しかし流動層式反応器
でも、 (1) 流動化に要する多量のガス流量が必要であ
り、多大な設備及び用役を必要とする。
Some of the above problems can be improved to some extent by using a fluidized bed reactor. For example, it becomes easier to maintain temperature uniformity. However, even in a fluidized bed reactor, (1) a large gas flow rate is required for fluidization, and a large amount of equipment and utilities are required.

(2) 副生する微粉状の塩化鉄、塩化カルシウム等
の塩化物が、流動化に必要な多量のガス流に同
伴して、珪素塩化物と共に反応器から流出する
ので、これらの分離が困難であり、かつ該微粒
子による配管等の閉塞が起こる。
(2) Fine powdered chlorides such as iron chloride and calcium chloride that are produced as by-products flow out of the reactor together with silicon chloride along with the large amount of gas flow required for fluidization, making it difficult to separate them. In addition, the particles cause clogging of pipes, etc.

(3) 塩素の反応率が低く、未反応物あるいは副生
物の除害に多大な費用を要する。
(3) The reaction rate of chlorine is low, and removal of unreacted substances or by-products requires a large amount of cost.

等の欠点があり、工業上適当とはいえなかつた。It had such drawbacks that it could not be said to be industrially suitable.

以上の如き固定層式及び流動層式反応器の問題
点に鑑み、六塩化珪素を大規模に製造する際に生
ずる反応温度の制御性、残渣の取り扱いに起因す
る問題、配管等の閉塞に関する問題等を解説すべ
く鋭意研究した結果、本発明者らは珪素原料と塩
素を反応させて六塩化珪素を製造するに際し、振
動式反応器を用いる事を特徴とする六塩化珪素の
製造方法を発明し特許出願した(特願昭60−
151297)。
In view of the above-mentioned problems with fixed bed and fluidized bed reactors, there are problems related to controllability of reaction temperature, handling of residues, and blockage of piping, etc. that occur when producing silicon hexachloride on a large scale. As a result of intensive research to explain the above, the present inventors invented a method for producing silicon hexachloride, which is characterized by using a vibrating reactor when producing silicon hexachloride by reacting a silicon raw material with chlorine. I applied for a patent (Patent application 1986-
151297).

その後更に本発明者らは、反応温度コントロー
ルが容易であり、塩素反応率が高く、配管等の閉
塞の問題のない方法を確率すべく鋭意研究した結
果、本発明を完成した。
Thereafter, the present inventors completed the present invention as a result of intensive research in order to establish a method that allows easy reaction temperature control, has a high chlorine reaction rate, and does not cause problems with clogging of pipes, etc.

(ロ) 発明の構成 〔問題点を解決する為の手段〕 本発明は珪素原料と塩素を反応させて六塩化珪
素を製造するに際し、反応気相部に仕切板を設け
てなる振動式反応器を用いて反応を行うことを特
徴とする六塩化珪素の製造方法である。
(B) Structure of the invention [Means for solving the problems] The present invention provides a vibratory reactor in which a partition plate is provided in the reaction gas phase when producing silicon hexachloride by reacting a silicon raw material with chlorine. This is a method for producing silicon hexachloride, characterized in that the reaction is carried out using.

振動式反応器を用いる本発明の方法は、まず反
応器自体を高速で振動させることにより反応器内
の珪素原料に振動を伝え、珪素原料同志の移動、
混合を起こし、また適宜な振動条件により気相部
を巻き込み、通常の流動層式の如く気泡の発生を
含む流動状態となし、珪素原料と気相部の塩素と
の有効接触面積を増大させ、反応を起こり易くす
るものである。
The method of the present invention using a vibratory reactor first vibrates the reactor itself at high speed to transmit vibration to the silicon raw material in the reactor, thereby causing movement of the silicon raw materials among themselves.
Mixing is caused, and the gas phase is drawn in under appropriate vibration conditions, creating a fluidized state that includes the generation of bubbles like a normal fluidized bed method, increasing the effective contact area between the silicon raw material and the chlorine in the gas phase, It makes it easier for the reaction to occur.

また大きな反応熱の除熱という見地からも、本
発明方法では珪素原料の流動により、珪素原料間
の伝熱あるいは珪素原料と外部ジヤケツト等の冷
却用媒体の器壁との伝熱が良好であり、効率的な
除熱を行ない得る。従つて塩素の反応量を増加さ
せる事が出来、効率的な六塩化珪素の製造を可能
とする。
In addition, from the standpoint of removing a large amount of reaction heat, the flow of the silicon raw material in the method of the present invention allows for good heat transfer between the silicon raw materials or between the silicon raw material and the wall of the cooling medium such as an external jacket. , efficient heat removal can be performed. Therefore, the reaction amount of chlorine can be increased, making it possible to efficiently produce silicon hexachloride.

更に又固定層式反応器の場合にあるように、反
応残渣の固結も起らず、器壁への付着も極めて少
ない。また流動層式反応器の場合の如く、流動化
に必要な多量のガス量に起因する問題も生じな
い。
Furthermore, unlike in the case of a fixed bed reactor, reaction residues do not solidify and there is very little adhesion to the vessel walls. Also, there are no problems caused by the large amounts of gas required for fluidization, as in the case of fluidized bed reactors.

更に本発明は、振動式反応器としてその反応気
相部に仕切板を設けたものを用いることにより、
気相部に供給する塩素が反応系の気相部を素通り
して排出されるのを防げ、塩素の珪素原料への拡
散を促進し、反応温度を適切に制御することが容
易となり、反応率を更に向上させることを可能と
したものである。
Furthermore, the present invention uses a vibrating reactor provided with a partition plate in the reaction gas phase, so that
This prevents the chlorine supplied to the gas phase from passing through the gas phase of the reaction system and being discharged, promoting the diffusion of chlorine into the silicon raw material, making it easy to appropriately control the reaction temperature, and increasing the reaction rate. This makes it possible to further improve the

即ち珪素原料と塩素の反応においては、塩素の
珪素原料層への拡散状態がその反応性を支配す
る。それ故塩素の反応率を高める為には、例え
ば、塩素供給の線速度を上げ珪素原料層へ吹付け
る等の手段をとると有効であるが、一方で反応温
度の不均一化につながる。しかしながら本発明の
如く振動式反応器を用い、反応気相部に仕切板を
設けると塩素供給の線速度を遅くしても、塩素の
反応率は高く、より均一な反応温度を維持し得る
ことが明らかになつた。しかも、その理由ははつ
きりしないが従来方式あるいは単なる振動式反応
器を用いた際に問題であつた塩素供給口の金属塩
化物や、珪素原料の微粒子による閉塞の頻度を著
しく低下させ得ることが確認された。
That is, in the reaction between the silicon raw material and chlorine, the state of diffusion of chlorine into the silicon raw material layer governs the reactivity. Therefore, in order to increase the reaction rate of chlorine, it is effective to take measures such as increasing the linear velocity of chlorine supply and spraying it onto the silicon raw material layer, but on the other hand, this leads to non-uniformity of the reaction temperature. However, if a vibrating reactor is used as in the present invention and a partition plate is provided in the reaction gas phase, even if the linear velocity of chlorine supply is slowed down, the chlorine reaction rate is high and a more uniform reaction temperature can be maintained. has become clear. Moreover, although the reason for this is not clear, it can significantly reduce the frequency of clogging of the chlorine supply port by metal chloride or fine particles of silicon raw material, which was a problem when using conventional methods or a simple vibration reactor. was confirmed.

〔反応原料〕[Reaction raw material]

本発明における珪素原料の1つである珪素合金
は、例えばカルシウムシリコン、マグネシウムシ
リコン、フエロシリコン等が挙げられ、特に好ま
しくはフエロシリコンである。珪素合金における
珪素含有量は、その種類にもよるが、30重量%以
上が好ましい。30重量%未満では珪素合金の珪素
以外の合金元素も塩素化されるため、塩素原単位
が大となる可能性がある。
Examples of the silicon alloy, which is one of the silicon raw materials in the present invention, include calcium silicon, magnesium silicon, ferrosilicon, etc., and ferrosilicon is particularly preferable. The silicon content in the silicon alloy is preferably 30% by weight or more, although it depends on the type. If it is less than 30% by weight, alloying elements other than silicon in the silicon alloy will also be chlorinated, so the chlorine consumption rate may become large.

珪素原料は単独でも又、混合物であつてもよ
く、アルミニウム、マンガン等他種金属等を含有
するものであつても差し支えない。
The silicon raw material may be used alone or as a mixture, and may contain other metals such as aluminum and manganese.

反応温度をより低く、又六塩化珪素をより高収
率で得ることが出来る点等より、珪素合金を用い
る事はより好ましい。
It is more preferable to use a silicon alloy because the reaction temperature can be lowered and silicon hexachloride can be obtained in a higher yield.

珪素原料は通常粒子状のものを使用する事が好
ましく、大粒子の場合は粉砕して適当な粒径に揃
えて使用するとよい。粒径は好ましくは5〜300
メツシユ、更に好ましくは20〜200メツシユであ
る。5メツシユを超えると塩素との反応性が小さ
くなる可能性があり、300メツシユ未満では、例
えば反応生成ガスや反応系に供給されている不活
性ガス等に同伴され、配管等の閉塞原因となる場
合がある。
It is usually preferable to use a silicon raw material in the form of particles, and in the case of large particles, it is preferable to crush them to a suitable particle size before use. Particle size is preferably 5-300
The number of meshes is preferably 20 to 200 meshes. If it exceeds 5 meshes, the reactivity with chlorine may decrease, and if it is less than 300 meshes, it may be entrained in reaction product gas or inert gas supplied to the reaction system, causing blockages in piping, etc. There are cases.

本発明の塩素は、特に限定するわけではないが
通常良く乾燥した塩素ガスを使用するのが好まし
く、例えばボンベ充填品又は乾燥剤を通したもの
を使用すればよい。
The chlorine used in the present invention is not particularly limited, but it is usually preferable to use well-dried chlorine gas, for example, a cylinder filled product or one passed through a desiccant may be used.

塩素は単独でもあるいは希釈ガスにより希釈さ
れたものでも良い。希釈ガスとしては六塩化珪素
と反応しないガスならば何でも良く、例えばN2
He、Ar、四塩化珪素等が挙げられる。
Chlorine may be used alone or diluted with a diluent gas. Any gas that does not react with silicon hexachloride may be used as the diluent gas, such as N2 ,
Examples include He, Ar, and silicon tetrachloride.

珪素原料と塩素の反応割合は特に限定されるも
のではなく、その最適割合は珪素原料の粒径径振
動式反応器の振動条件、反応温度、仕切板等の条
件により異なるが、反応器内に存在する珪素原料
単位量(Kg)当り、2〜50/hrが好ましい。2
/hr未満では反応時間がかゝりすぎ好ましいと
は云えず、50/hrを超えると未反応塩素が多く
なる可能性がある。
The reaction ratio between the silicon raw material and chlorine is not particularly limited, and the optimal ratio varies depending on the particle size of the silicon raw material, the vibration conditions of the vibratory reactor, the reaction temperature, the partition plate, etc. It is preferably 2 to 50/hr per unit amount (Kg) of silicon raw material present. 2
If the reaction time is less than 50/hr, the reaction time will be too long and it cannot be said to be preferable, and if it exceeds 50/hr, there may be a large amount of unreacted chlorine.

塩素を希釈ガスと共に反応系に供給する場合
は、反応熱のコントロールがし易い等の点から希
釈ガス/塩素ガスが0〜5の範囲が好ましく、通
常1以下で十分である。
When chlorine is supplied to the reaction system together with diluent gas, the ratio of diluent gas/chlorine gas is preferably in the range of 0 to 5, from the viewpoint of easy control of reaction heat, etc., and usually 1 or less is sufficient.

〔反応器〕[Reactor]

本発明の反応気相部に仕切板を設けてなる振動
式反応器とは、反応器本体、仕切板および該反応
器を振動させる発振装置より構成されるものであ
る。
The vibrating reactor in which a partition plate is provided in the reaction gas phase of the present invention is composed of a reactor main body, a partition plate, and an oscillation device that vibrates the reactor.

反応器本体は発振装置を具備し得るものであれ
ば形状を問うものではなく、例えば縦型、横型の
ものが挙げられる。反応器本体は冷却又は加熱用
外部ジヤケツトを備えていると良く、又、伝熱を
良くする為に反応器内部にフイン、コイル等を備
えたものでも良い。又、内部が棚段になつていて
も差しつかえない。反応器本体には通常反応原料
である珪素原料及び塩素を供給する管、生成した
六塩化珪素を含む珪素塩化物を提出する管、反応
後の残渣を排出する管、が備えられている。
The shape of the reactor main body is not critical as long as it can be equipped with an oscillation device, and for example, it may be vertical or horizontal. The reactor body may be provided with an external jacket for cooling or heating, and may also be provided with fins, coils, etc. inside the reactor to improve heat transfer. Also, it is acceptable if the interior is made up of shelves. The main body of the reactor is usually equipped with a pipe for supplying a silicon raw material and chlorine as reaction raw materials, a pipe for supplying the produced silicon chloride containing silicon hexachloride, and a pipe for discharging the residue after the reaction.

仕切板は反応器本体内の反応気相部に設けら
れ、その材質は塩素に侵されず反応温度に耐える
ものであれば特にその種類を問うものではない
が、通常ステンレス鋼、耐熱性プラスチツク等が
用いられる。
The partition plate is installed in the reaction gas phase inside the reactor body, and its material is not particularly limited as long as it is not attacked by chlorine and can withstand the reaction temperature, but it is usually made of stainless steel, heat-resistant plastic, etc. is used.

仕切板の形状は、反応器内の気相部において気
流の流通を妨げ、これによつて塩素の珪素原料へ
の拡散を促進し得るものであればいかなるもので
も良いが、気相部に接触する反応器内壁に接しか
つその形状が気相部の断面(気流の通過方向に対
して直角に切断したときの断面、以下同じ)と一
致して気相部の少なくとも上部を閉塞できるもの
が適している。仕切板の大きさは、気相部の断面
積(気流の流通方向に対して直角に切断したとき
の断面積)に対し反応器の上部より3分の1以上
ないし珪素原料層に接する程度までの空間を閉塞
できるものが望ましく、珪素原料層の厚みが大き
い場合には気相部を完全に閉塞する大きさ、換言
すれば仕切板が珪素原料層にくい込む大きさでも
構わない。特に気相部断面積の3分の2ないし振
動状態において珪素原料層とわずかな間隙が出来
る程度の大きさの仕切板を設けるのが望ましい。
上記閉塞面積が3分の1未満では塩素ガスが素通
りして反応に関与しないまま排出される可能性が
ある。
The shape of the partition plate may be any shape as long as it can obstruct the flow of air in the gas phase in the reactor and thereby promote the diffusion of chlorine into the silicon raw material, but it may have any shape that does not come into contact with the gas phase. A suitable material is one that is in contact with the inner wall of the reactor and whose shape matches the cross section of the gas phase (cross section taken perpendicular to the direction of air flow; the same applies hereinafter) so that at least the upper part of the gas phase can be closed off. ing. The size of the partition plate should be at least one third of the cross-sectional area of the gas phase (cross-sectional area when cut perpendicular to the direction of airflow) from the top of the reactor, or up to the extent that it touches the silicon raw material layer. It is desirable that the partition plate be able to close the space of the silicon raw material layer, and if the thickness of the silicon raw material layer is large, the size may be such that the gas phase portion is completely closed off, or in other words, the partition plate may be large enough to sink into the silicon raw material layer. In particular, it is desirable to provide a partition plate with a size that is two-thirds of the cross-sectional area of the gas phase section or a size that allows a slight gap with the silicon raw material layer in the vibration state.
If the above-mentioned blockage area is less than one-third, chlorine gas may pass through and be discharged without participating in the reaction.

仕切板は、反応気相部のガス流を妨げ気流の滞
留部が効率的に形成されるように生成ガス出口管
の直前に取り付けるのが通常望ましい。また塩素
供給口を反応器に複数個設ける場合は、供給口毎
に仕切板を設けて区画することも可能である。こ
の場合は夫々の区画に対応して塩素の供給量ある
いは熱媒の温度を変化させる等更に細かな運転管
理が可能となる。勿論塩素供給口が複数ある場合
であつても、仕切板を反応生成ガス出口配管の直
前に1枚設ける態様でも構わない。
It is usually desirable to install the partition plate just before the produced gas outlet pipe so that the gas flow in the reaction gas phase is blocked and a gas flow retention area is efficiently formed. Further, when a plurality of chlorine supply ports are provided in the reactor, it is also possible to partition each supply port by providing a partition plate. In this case, more detailed operational management such as changing the amount of chlorine supplied or the temperature of the heating medium becomes possible in accordance with each compartment. Of course, even if there are a plurality of chlorine supply ports, one partition plate may be provided immediately before the reaction product gas outlet piping.

仕切板の反応器本体に取り付ける方法として
は、熔接、ネジ止めあるいはフランジで挾む等の
手段を用いることにより行える。
The partition plate can be attached to the reactor body by means such as welding, screwing, or clamping with flanges.

発振装置は反応器に振動を起こさせる装置なら
どんなものでも良く、例えば化学装置便覧(化学
工業協会編、昭和45年6月15日発行)第844頁に
あるように、工業的には不平衡おもり式発表装
置偏心軸またはクランク式発振装置電磁式発
振装置等が挙げられる。
The oscillator can be any device that causes vibration in the reactor, and for example, as described in the Chemical Equipment Handbook (edited by the Chemical Industry Association, published June 15, 1970), page 844, it is industrially unbalanced. Examples include a weight type presentation device, an eccentric shaft, a crank type oscillation device, an electromagnetic type oscillation device, etc.

本発明の反応における発振装置の振動条件は、
珪素原料に充分な振動を与え、良好な流動状態と
し、温度分布の充分なコントロールを可能とし、
又発振装置の適正な設備費、塩素、生成ガス、熱
媒用配管と反応器との接続におけるフレキシブル
チユーブの選択の容易性を考慮すると、振動数
400〜3600cpmおよび振幅0.5〜30mmが好ましく、
更に好ましくは振動数1000〜1800cpmおよび振幅
1〜10mmである。
The vibration conditions of the oscillation device in the reaction of the present invention are:
Gives sufficient vibration to the silicon raw material, makes it in a good fluid state, and enables sufficient control of temperature distribution.
In addition, considering the appropriate equipment cost of the oscillator and the ease of selecting flexible tubes for connecting chlorine, generated gas, and heat medium piping to the reactor, the frequency
400-3600cpm and amplitude 0.5-30mm are preferred;
More preferably, the frequency is 1000 to 1800 cpm and the amplitude is 1 to 10 mm.

また振動方向としては直線、円、楕円、ねじ
り、旋回運動のいずれでもよく、又水平面、鉛直
面運動のいずれであつてもよい。
The direction of vibration may be linear, circular, elliptical, torsional, or turning, and may be horizontal or vertical.

振動式反応器は通常、支持基台との間に弾性支
持する為の防振装置を備えているのが望ましい。
防振装置には鋼製のコイルバネ、板バネ、空気バ
ネ等が、又、振動式反応器と各種流体配管との接
続にはゴム管、金属製及び樹脂製のベロータイプ
フレキブルチユーブ、金属製及び樹脂製のコイル
状の管等が用られる。
It is usually desirable for a vibrating reactor to be provided with a vibration isolator for elastic support between the vibrating reactor and the support base.
Vibration isolators include steel coil springs, plate springs, air springs, etc., and rubber tubes, metal and resin bellows type flexible tubes, metal A coiled pipe made of resin or the like is used.

〔反応方法〕[Reaction method]

本発明の反応方法を具体的に説明すると、例え
ば次の通りである。
A concrete explanation of the reaction method of the present invention is as follows, for example.

珪素原料を反応気相部に仕切板を設けてなる振
動式反応器に供給し振動発生装置により振動させ
ながら所定温度まで昇温させる。
A silicon raw material is supplied to a vibrating reactor having a partition plate in the reaction gas phase, and heated to a predetermined temperature while being vibrated by a vibration generator.

仕切板の形状、設置位置等に関しては前記の如
くが望ましい。
The shape, installation position, etc. of the partition plate are preferably as described above.

反応器への珪素原料の供給量は特に限定される
ものではないが、好ましくは反応器の20〜80容量
%、更に好ましくは30〜60容量%である。20容量
%未満では容積効率が悪くなる場合があり、80容
量%を超えると珪素原料の混合状態が悪くなり、
その為温度コントロールが難しくなる可能性があ
る。
The amount of silicon raw material supplied to the reactor is not particularly limited, but is preferably 20 to 80% by volume, more preferably 30 to 60% by volume of the reactor. If it is less than 20% by volume, the volumetric efficiency may deteriorate, and if it exceeds 80% by volume, the mixing state of the silicon raw material will deteriorate.
Therefore, temperature control may become difficult.

発振装置による振動条件は前記の如くが望まし
い。
The vibration conditions for the oscillation device are preferably as described above.

反応温度は珪素原料の種類により異なるが、
100〜500℃が好ましい。100℃未満では塩素の反
応率が低くなり易く、500℃を超えると六塩化珪
素の収率の低下につながる可能性がある。例えば
珪素原料がフエロシリコン、カルシウムシリコン
の場合には120〜250℃、金属珪素の場合には300
〜500℃が好ましい。
The reaction temperature varies depending on the type of silicon raw material, but
100-500°C is preferred. If it is less than 100°C, the reaction rate of chlorine tends to be low, and if it exceeds 500°C, it may lead to a decrease in the yield of silicon hexachloride. For example, when the silicon raw material is ferrosilicon or calcium silicon, the temperature is 120 to 250℃, and when the silicon material is metal silicon, the temperature is 300℃.
~500°C is preferred.

反応温度をコントロールする方法としては反応
器ジヤケツトに冷却用流体を通す方式、電気ヒー
ターにより反応器壁の温度を制御する方式等、が
挙げられるが、反応により発生する熱量を有効に
除去できる方式ならどんな方法でも良い。
Methods of controlling the reaction temperature include passing a cooling fluid through the reactor jacket, controlling the temperature of the reactor wall using an electric heater, etc. However, if the method can effectively remove the amount of heat generated by the reaction, then Any method is fine.

温度を所定温度まで昇温させた後、必要あれば
希釈ガスと共に、塩素を反応器に供給する。塩素
の供給割合は好ましくは前記の通りである。反応
の終了は反応系外の廃ガス出口管に導かれた廃ガ
ス中の未反応塩素濃度を測定することによつて把
握でき、該塩素濃度が所定の値以上になつた時を
もつて塩素の供給を停止すれば良い。
After raising the temperature to a predetermined temperature, chlorine is supplied to the reactor together with diluent gas if necessary. The feed rate of chlorine is preferably as described above. The completion of the reaction can be determined by measuring the unreacted chlorine concentration in the waste gas led to the waste gas outlet pipe outside the reaction system, and when the chlorine concentration exceeds a predetermined value, the chlorine All you have to do is stop the supply.

上記のごとくして反応させ、生成した六塩化珪
素を含む生成物は、通常ガス状で反応器の生成ガ
ス出口管より冷却管に導かれ、冷却後生成液とし
て取得する。
The product containing silicon hexachloride produced by the reaction as described above is usually guided in a gaseous state from the produced gas outlet pipe of the reactor to a cooling pipe, and is obtained as a produced liquid after cooling.

本発明は回分式反応のほか連続反応にても実施
できる。連続反応の場合は振動式反応器に珪素原
料連続供給装置及び反応残渣連続排出装置を設置
すれば良い。なおこの場合の反応器内での珪素原
料と塩素との流れ方向は並流でも良く向流でも良
い。
The present invention can be carried out not only in batch reactions but also in continuous reactions. In the case of a continuous reaction, a device for continuously supplying a silicon raw material and a device for continuously discharging reaction residue may be installed in a vibrating reactor. In this case, the flow direction of the silicon raw material and chlorine in the reactor may be cocurrent or countercurrent.

生成液中には六塩化珪素の他、四塩化珪素、八
塩化珪素等が含まれ、蒸留法等により精製して六
塩化珪素を得る。
The produced liquid contains silicon tetrachloride, silicon octachloride, etc. in addition to silicon hexachloride, and is purified by distillation or the like to obtain silicon hexachloride.

〔実施例及び比較例〕[Examples and comparative examples]

以下に本発明を実施例、比較例を挙げて具体的
に説明するが、本発明は実施例により限定される
ものではない。
EXAMPLES The present invention will be specifically described below with reference to Examples and Comparative Examples, but the present invention is not limited by the Examples.

実施例 第1図の様な150mmφ×150mmの回分式のステン
レス製振動式反応器(横型式)1に、反応器本体
内部の縦断面形状と一致し、反応器本体内部の最
上部より60mmの長さを有し、厚さ5mmであるかま
ぼこ型の仕切板27を生成ガス出口の直前に取り
付け、フエロシリコン4(珪素含有量50重量%、
40メツシユ通過品、平均粒径d50=230μm)を35
Kg仕込んだ。フエロシリコン4の容量は反応器本
体の約50容量%であつた。希釈ガス供給管9より
N2ガスを200/hrで流しながら、反応器1を発
振装置2により振動数1650cpm、振幅3mmの振動
条件で振動させ、外部ジヤケツト10により加温
し、160℃まで昇温させた。その後N2ガスを30
/hrにしぼり、反応の最高温度を160℃にコン
トロールしながら塩素供給管8より塩素を平均
350/hrで流し反応させた。塩素供給管口の口
径は16mmφであり、塩素の線連度は約0.5m/sec
であつたが、塩素の反応率はほとんど99〜99.9%
であり、塩素の反応率が95%になつた時点をもつ
て反応終了とした。
Example A batch-type stainless steel vibratory reactor (horizontal type) 1 of 150 mmφ x 150 mm as shown in Fig. 1 has a diameter of 60 mm from the top of the inside of the reactor body, matching the vertical cross-sectional shape of the inside of the reactor body. A semi-cylindrical partition plate 27 having a length and a thickness of 5 mm was attached just before the generated gas outlet, and Ferrosilicon 4 (silicon content 50% by weight,
40 meshes, average particle size d 50 = 230 μm) 35
I prepared Kg. The volume of Ferrosilicon 4 was approximately 50% by volume of the reactor body. From dilution gas supply pipe 9
While N 2 gas was flowing at 200/hr, the reactor 1 was vibrated by the oscillator 2 at a frequency of 1650 cpm and an amplitude of 3 mm, and heated by the external jacket 10 to 160°C. Then add N2 gas to 30
/hr, and average chlorine from chlorine supply pipe 8 while controlling the maximum reaction temperature to 160℃.
The reaction was carried out at 350/hr. The diameter of the chlorine supply pipe is 16mmφ, and the line continuity of chlorine is approximately 0.5m/sec.
However, the reaction rate of chlorine was almost 99-99.9%.
The reaction was terminated when the chlorine reaction rate reached 95%.

供給した塩素流量は合計28.2m3であつた。尚、
珪素原料層内の、反応器長さ方向の等間隔4ケ所
において温度を測定していたが、4カ所のうち最
高温度と最低温度の差はほとんど5℃以内であつ
た。
The total flow rate of chlorine supplied was 28.2 m3 . still,
Temperatures were measured at four equally spaced locations in the length direction of the reactor within the silicon raw material layer, and the difference between the highest and lowest temperatures among the four locations was mostly within 5°C.

反応により生成した生成ガスおよび未反応ガス
を生成ガス出口管21より、沈降式集塵装置22
により、随伴した微粉状物を除去した後、冷却管
23の内管に通し、外管に通じた0℃の冷媒にて
冷却し、生成液受器24内に生成液25を得た。
The generated gas and unreacted gas generated by the reaction are passed through the generated gas outlet pipe 21 to a sedimentation type dust collector 22.
After removing the accompanying fine powder, it was passed through the inner tube of the cooling tube 23 and cooled with a 0° C. refrigerant that communicated with the outer tube, and a product liquid 25 was obtained in the product liquid receiver 24.

得られた生成液量は合計71.6Kgであり、その組
成は六塩化珪素57.2重量%、四塩化珪素41.3重量
%、高次塩化物(八塩化珪素以上)1.5重量%で
あつた。反応器1内のフエロシリコン反応残渣の
性状は粉粒状であり、取り出しは容易であつた。
この反応残渣を分析した所、主体は塩化第二鉄
(無水)であり、その他未反応のフエロシリコン、
原料フエロシリコンの不純物に起因する塩化アル
ミニウム等の金属塩化物が存在した。
The total amount of product liquid obtained was 71.6 kg, and its composition was 57.2% by weight of silicon hexachloride, 41.3% by weight of silicon tetrachloride, and 1.5% by weight of higher chlorides (silicon octachloride or higher). The ferrosilicon reaction residue in reactor 1 was in the form of powder and could be easily taken out.
Analysis of this reaction residue revealed that the main component was ferric chloride (anhydrous), with other unreacted ferrosilicon,
Metal chlorides such as aluminum chloride were present due to impurities in the raw material ferrosilicon.

未反応のフエロシリコンは7.5Kgであり、フエ
ロシリコンの反応率は78.6%であつた。反応器1
の内壁への残渣の付着はほとんどなく、また塩素
供給管8、生成ガス出口管21等の閉塞の兆候は
全く認められなかつた。
The amount of unreacted ferrosilicon was 7.5 kg, and the reaction rate of ferrosilicon was 78.6%. Reactor 1
There was almost no residue adhering to the inner wall of the reactor, and no signs of clogging of the chlorine supply pipe 8, the produced gas outlet pipe 21, etc. were observed.

比較例 第1図の反応器で、仕切板を切り付けず、振動
条件、フエロシリコン仕込量、塩素及びN2ガス
の供給量、反応の最高温度を実施例と同様にして
実施したが、塩素の反応率は、最初から90〜95%
と低かつた。その後、一旦反応を中断し、塩素供
給管8の口径を6mmφのものと交換し、塩素線速
度を約3.4m/secとした他は再び同条件で反応さ
せた所塩素の反応率は98〜99.9%と向上したの
で、そのまま反応を断続した。塩素の反応率が90
%になつた時点で反応終了とした。ただし実施例
同様4ケ所の温度を測定した所、最高温度と最低
温度の差は10〜20℃の程度であつた。しかも塩素
供給管口が、徐々に閉塞傾向を示し、反応途中、
2回取りはずし、洗浄する必要があつた。供給し
た塩素は合計26.5m3で、得られた生成液量は合計
62.5Kg、その組成は六塩化珪素54.8重量%、四塩
化珪素43.4重量%高次塩化物(八塩化珪素以上)
1.8重量%であつた。未反応のフエロシリコンは
10.3Kg、フエロシリコンの反応率は70.5%であつ
た。
Comparative Example A test was carried out using the reactor shown in Figure 1, without cutting the partition plate, and using the same vibration conditions, ferrosilicon charge amount, chlorine and N2 gas supply amounts, and maximum reaction temperature as in the example. The response rate is 90-95% from the beginning
It was low. After that, the reaction was stopped once, the diameter of the chlorine supply pipe 8 was replaced with one of 6 mmφ, and the reaction was carried out again under the same conditions except that the linear velocity of chlorine was set to about 3.4 m/sec. The reaction rate of chlorine was 98 ~ Since the improvement was 99.9%, the reaction was continued intermittently. Chlorine reaction rate is 90
%, the reaction was considered complete. However, when the temperature was measured at four locations as in the example, the difference between the highest temperature and the lowest temperature was about 10 to 20°C. Moreover, the chlorine supply pipe port gradually showed a tendency to blockage, and during the reaction,
I had to remove it twice and clean it. A total of 26.5m3 of chlorine was supplied, and a total of 26.5m3 of produced liquid was produced.
62.5Kg, its composition is silicon hexachloride 54.8% by weight, silicon tetrachloride 43.4% by weight higher chloride (silicon octachloride or higher)
It was 1.8% by weight. Unreacted ferrosilicon
10.3Kg, and the reaction rate of ferrosilicon was 70.5%.

(ハ) 発明の効果 本発明は、反応器自体に機械的振動を与え珪素
原料を流動化させながら塩素化することにより、
塩素との有効接触面積を大とし、更に反応器の気
相部に仕切板を設置することにより塩素が素通り
して排出される割合を減ずると同時に、塩素の珪
素原料層への拡散を促進させ、塩素の反応率を高
め、また反応器全体で均一な反応を行わしめるこ
とを可能とし、それ故、振動式反応器の特徴と相
俟つて相乗的に反応温度のコントロールを容易に
し、反応熱の大きい本反応を工業的規模で安定に
操業出来る事を可能にしたものである。又、配管
の閉塞、特に塩素供給管における金属塩化物や珪
素原料の微粒子による閉塞問題を解決し、又反応
後の処理も容易であり、高収率で効率良く六塩化
珪素を製造する事が出来る。
(c) Effects of the invention The present invention chlorinates the silicon raw material while fluidizing it by applying mechanical vibration to the reactor itself.
By increasing the effective contact area with chlorine and installing a partition plate in the gas phase of the reactor, the rate at which chlorine passes through and is discharged is reduced, and at the same time, the diffusion of chlorine into the silicon raw material layer is promoted. This makes it possible to increase the reaction rate of chlorine and to perform a uniform reaction throughout the reactor. Therefore, in combination with the characteristics of the vibration reactor, it synergistically facilitates control of the reaction temperature and reduces the reaction heat. This made it possible to stably operate this reaction on an industrial scale with a large value. In addition, it solves the problem of clogging of piping, especially in chlorine supply pipes due to metal chlorides and fine particles of silicon raw materials, and it is easy to process after the reaction, making it possible to efficiently produce silicon hexachloride with high yield. I can do it.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明方法を実施するための装置の一
例の縦断面概略図である。 1……反応器、2……発振装置(不平衡おもり
式)、4……フエロシリコン、7……珪素原料供
給管、8……塩素供給管、13……反応残渣排出
管、21……生成ガス出口管、23……冷却管、
25……生成液、27……仕切板。
FIG. 1 is a schematic vertical cross-sectional view of an example of an apparatus for carrying out the method of the present invention. DESCRIPTION OF SYMBOLS 1... Reactor, 2... Oscillator (unbalanced weight type), 4... Ferrosilicon, 7... Silicon raw material supply pipe, 8... Chlorine supply pipe, 13... Reaction residue discharge pipe, 21... ...Produced gas outlet pipe, 23...Cooling pipe,
25...Produced liquid, 27...Partition plate.

Claims (1)

【特許請求の範囲】[Claims] 1 珪素合金または金属珪素と塩素を反応させて
六塩化珪素を製造するに際し、反応気相部に仕切
板を設けてなる振動式反応器を用いて反応を行う
事を特徴とする六塩化珪素の製造方法。
1. When producing silicon hexachloride by reacting a silicon alloy or metal silicon with chlorine, the reaction is carried out using a vibrating reactor provided with a partition plate in the reaction gas phase. Production method.
JP4142286A 1985-07-11 1986-02-28 Production of silicon hexachloride Granted JPS62202812A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP4142286A JPS62202812A (en) 1986-02-28 1986-02-28 Production of silicon hexachloride
DE19863623493 DE3623493A1 (en) 1985-07-11 1986-07-11 Process for preparing silicon hexachloride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4142286A JPS62202812A (en) 1986-02-28 1986-02-28 Production of silicon hexachloride

Publications (2)

Publication Number Publication Date
JPS62202812A JPS62202812A (en) 1987-09-07
JPH051207B2 true JPH051207B2 (en) 1993-01-07

Family

ID=12607918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4142286A Granted JPS62202812A (en) 1985-07-11 1986-02-28 Production of silicon hexachloride

Country Status (1)

Country Link
JP (1) JPS62202812A (en)

Also Published As

Publication number Publication date
JPS62202812A (en) 1987-09-07

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