JPH0513097B2 - - Google Patents
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- Publication number
- JPH0513097B2 JPH0513097B2 JP59132420A JP13242084A JPH0513097B2 JP H0513097 B2 JPH0513097 B2 JP H0513097B2 JP 59132420 A JP59132420 A JP 59132420A JP 13242084 A JP13242084 A JP 13242084A JP H0513097 B2 JPH0513097 B2 JP H0513097B2
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- Prior art keywords
- glass substrate
- transparent conductive
- conductive film
- fine particles
- charged
- Prior art date
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Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は透明導電膜の形成方法、特にガラス基
板上に透明導電膜を形成する改良された方法に関
する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for forming a transparent conductive film, and particularly to an improved method for forming a transparent conductive film on a glass substrate.
[背景技術]
従来より、可視光に対して透明でかつ導電性を
有する透明導電膜が周知であり、該透明導電膜
は、透明電極として例えば液晶表示器、エレクト
ロクロミツク表示器、エレクトロルミネツセンス
表示器等に幅広く用いられ、これ以外にも熱線遮
蔽膜、電磁遮蔽膜及びその他の用途に幅広く用い
られている。[Background Art] Transparent conductive films that are transparent to visible light and have electrical conductivity have been well known, and these transparent conductive films can be used as transparent electrodes, for example, in liquid crystal displays, electrochromic displays, and electroluminescent displays. It is widely used in sense displays, etc., and is also widely used in heat ray shielding films, electromagnetic shielding films, and other applications.
このような透明導電膜の形成にあたつては、従
来より真空蒸着法、スパツタリング法、イオンプ
レーテイング法、ケミカルベーパーデイポジシヨ
ン(CVD)法、スプレー法、浸積法が周知であ
り、特に今日、スプレー法、浸積法等が幅広く用
いられている。 For forming such transparent conductive films, vacuum evaporation, sputtering, ion plating, chemical vapor deposition (CVD), spraying, and immersion methods are well known. Today, spray methods, dipping methods, etc. are widely used.
このスプレー法によれば、高温度に加熱したガ
ラス基板に、例えば四塩化すずの水溶液を微粒子
化して吹付けることにより、ガラス基板上に透明
導電膜を形成することができる。従つて、この方
法によれば、透明導電膜の形成に真空を必要とせ
ずしかも簡単な装置で製膜を行うことが可能とな
り、大面積の透明導電膜を形成する場合に極めて
便利である。 According to this spray method, a transparent conductive film can be formed on a glass substrate by spraying, for example, an aqueous solution of tin tetrachloride in fine particles onto a glass substrate heated to a high temperature. Therefore, according to this method, a vacuum is not required for forming a transparent conductive film, and the film can be formed using a simple device, which is extremely convenient when forming a transparent conductive film over a large area.
しかし、このスプレー法は、キヤリアガスを用
いて四塩化すず水溶液の微粒子をガラス基板表面
に付着させており、このためキヤリアガスの気流
に乱れが生ずるとガラス基板上への微粒子の付着
が不均一となり、この結果光学特性、電気特性に
優れ膜厚の均一な透明導電膜を形成することがで
きないという欠点があつた。更に前述したように
キヤリアガスの気流に乱れが生ずると、該キヤリ
アガスにより搬送される微粒子の一部がガラス基
板に付着することなく周囲に散乱してしまうた
め、微粒子の付着効率が低く、微粒子材料の有効
利用を図ることができないという欠点があつた。 However, this spray method uses a carrier gas to attach fine particles of tin tetrachloride aqueous solution to the surface of the glass substrate, and therefore, if the airflow of the carrier gas is disturbed, the fine particles will adhere unevenly to the glass substrate. As a result, there was a drawback that a transparent conductive film with excellent optical properties and electrical properties and a uniform thickness could not be formed. Furthermore, as mentioned above, if turbulence occurs in the airflow of the carrier gas, some of the particles carried by the carrier gas will be scattered around without adhering to the glass substrate, resulting in a low adhesion efficiency of the particles and damage to the particulate material. The drawback was that it could not be used effectively.
更に、このような従来のスプレー法によればガ
ラス基板上に微粒子を付着させ透明導電膜を形成
する途中において、ガラス基板中に含まれるアル
カリイオンが透明導電膜中に多量に拡散侵入し透
明導電膜の透明度、導電性の低下を引起こすとい
う欠点があつた。 Furthermore, according to such a conventional spray method, during the process of depositing fine particles onto a glass substrate to form a transparent conductive film, a large amount of alkali ions contained in the glass substrate diffuse into the transparent conductive film and cause the transparent conductive film to be formed. This method had the disadvantage of causing a decrease in film transparency and conductivity.
また、前記浸積法によれば、ガラス基板を例え
ば有機インジウム化合物溶液中に浸積した後これ
を一定速度で引上げ、高温熱処理することにより
ガラス基板上に透明導電膜が形成される。従つ
て、この浸漬法は、真空を必要としないことから
製膜装置を簡単なものとすることができ、大面積
の透明導電膜を形成する場合に好適である。 Further, according to the immersion method, a transparent conductive film is formed on the glass substrate by immersing the glass substrate in, for example, an organic indium compound solution, pulling it up at a constant speed, and subjecting it to high-temperature heat treatment. Therefore, since this immersion method does not require a vacuum, the film forming apparatus can be simplified and is suitable for forming a large area transparent conductive film.
しかしこの反面、該浸積法はガラス基板上に光
学特性、電気特性の優れた均一な膜厚の透明導電
膜を形成することが難しく、しかもガラス基板の
全面に渡つて透明導電膜が形成されることから膜
材料の無駄が多く、更に、前記スプレー法に比べ
てその製膜に要する処理工程が多いという欠点が
あつた。 On the other hand, however, with this immersion method, it is difficult to form a transparent conductive film of uniform thickness with excellent optical and electrical properties on a glass substrate, and moreover, the transparent conductive film is not formed over the entire surface of the glass substrate. Therefore, there is a large amount of wastage of membrane material, and furthermore, there are disadvantages in that there are many processing steps required for film formation compared to the above-mentioned spray method.
[発明の目的]
本発明はこのような従来の課題に鑑み為された
ものであり、その目的は、ガラス基板上に均一の
膜厚を有し光学特性、電気特性に優れた透明導電
膜を効率良く形成することが可能な透明導電膜の
形成方法を提供することにある。[Object of the Invention] The present invention has been made in view of the above-mentioned conventional problems, and its purpose is to provide a transparent conductive film having a uniform film thickness and excellent optical and electrical properties on a glass substrate. An object of the present invention is to provide a method for forming a transparent conductive film that can be formed efficiently.
[発明の構成]
前記目的を達成するため、本発明の方法は、ガ
ラス基板の前面に帯電用プラス電極を配置し、ガ
ラス基板の背面に静電力発生用マイナス電極を配
置し、透明導電膜材料を含む溶液を微粒子化した
後前記帯電用プラス電極によりこの微粒子を正電
位に帯電させ、帯電微粒子とガラス基板との間に
発生する静電力により帯電微粒子をガラス基板表
面に付着させ、ガラス基板表面に透明導電膜を形
成することを特徴とする。[Structure of the Invention] In order to achieve the above object, the method of the present invention includes arranging a positive electrode for charging on the front surface of a glass substrate, arranging a negative electrode for generating electrostatic force on the back surface of the glass substrate, and disposing a transparent conductive film material. After turning the solution containing microparticles into microparticles, the microparticles are charged to a positive potential using the positive charging electrode, and the electrostatic force generated between the charged microparticles and the glass substrate causes the charged microparticles to adhere to the surface of the glass substrate. The method is characterized in that a transparent conductive film is formed on the surface.
[実施例]
次に本発明に係る透明導電膜の形成方法の好適
な実施例を図面に基づき説明する。[Example] Next, a preferred example of the method for forming a transparent conductive film according to the present invention will be described based on the drawings.
透明導電膜形成装置
第1図には本発明の方法が適用される透明導電
膜形成装置の好適な実施例が示されており、実施
例の装置は、ガラス基板10の表面に透明導電膜
材料を含む溶液100を微粒子化して付着させる
ことにより、透明導電膜を形成するものである。Transparent Conductive Film Forming Apparatus FIG. 1 shows a preferred embodiment of the transparent conductive film forming apparatus to which the method of the present invention is applied. A transparent conductive film is formed by finely forming a solution 100 containing the above particles and depositing the particles.
ここにおいて、実施例のガラス基板10は、ソ
ーダライムを用いて形成されており、その表面を
外部に向けた状態で保温材12により垂直に保持
されている。 Here, the glass substrate 10 of the example is formed using soda lime, and is held vertically by a heat insulating material 12 with its surface facing outside.
実施例において、この保温材12は、例えばア
スベスト等の断熱材料を用いて形成され、その内
部にはガラス基板10をその背面側から加熱する
ヒータ14が設けられている。 In the embodiment, the heat insulating material 12 is formed using a heat insulating material such as asbestos, and a heater 14 for heating the glass substrate 10 from the back side thereof is provided inside the heat insulating material 12.
また、本実施例において、前記溶液100とし
て、所定の金属化合物の溶液を用い、該溶液10
0を微粒子化装置16を用いて霧状の微粒子とし
ている。 Further, in this example, a solution of a predetermined metal compound is used as the solution 100, and the solution 100 is
0 is made into atomized fine particles using the atomization device 16.
本発明の特徴的事項は、このようにして形成さ
れた溶液100の微粒子を正電位に帯電させ、該
帯電微粒子とガラス基板10の表面との間に静電
力を発生させ、この静電力により帯電微粒子をガ
ラス基板表面に付着させガラス基板10の表面に
透明導電膜を形成することにある。このようにす
ることにより、溶液100の微粒子はガラス基板
10との間に発生する静電力によりガラス基板1
0の表面に均一に付着し、均一な膜厚でかつ光学
特性、電気特性に優れた透明導電膜を形成するこ
とが可能となる。 A characteristic feature of the present invention is that the particles of the solution 100 thus formed are charged to a positive potential, an electrostatic force is generated between the charged particles and the surface of the glass substrate 10, and the electrostatic force causes the particles to be charged. The purpose is to form a transparent conductive film on the surface of the glass substrate 10 by attaching fine particles to the surface of the glass substrate. By doing this, the fine particles of the solution 100 are moved to the glass substrate 10 by the electrostatic force generated between the solution 100 and the glass substrate 10.
It becomes possible to form a transparent conductive film that is uniformly adhered to the surface of 0, has a uniform thickness, and has excellent optical and electrical properties.
このため、本発明においては、ガラス基板10
の前面に帯電用プラス電極18を配置し、ガラス
基板10の背面側に静電力発生用マイナス電極2
0を配置し、微粒子化装置16により形成された
溶液100の微粒子をプラス電極18を用いて正
電位に帯電させ、この帯電微粒子とガラス基板1
0の表面との間に静電力を発生させている。 Therefore, in the present invention, the glass substrate 10
A positive electrode 18 for charging is arranged on the front side of the glass substrate 10, and a negative electrode 2 for generating electrostatic force is arranged on the back side of the glass substrate 10.
0, the particles of the solution 100 formed by the atomization device 16 are charged to a positive potential using the positive electrode 18, and the charged particles and the glass substrate 1 are
Electrostatic force is generated between it and the surface of 0.
実施例において、前記プラス電極18は、ガラ
ス基板10の表面中央部に向けて先端が対向配置
された針状電極として形成され、前記マイナス電
極20はガラス基板10の背面全域と当設するよ
うAg又はグラフアイト膜等を用いて平板状に形
成されている。そして、プラス電極18には直流
電源22のプラス側がアースラインを介して接続
され、マイナス電極には直流電源22のマイナス
側が接続されている。 In the embodiment, the positive electrode 18 is formed as a needle-shaped electrode with the tip facing toward the center of the surface of the glass substrate 10, and the negative electrode 20 is formed of Ag so as to be in contact with the entire back surface of the glass substrate 10. Alternatively, it is formed into a flat plate using a graphite film or the like. The plus side of the DC power source 22 is connected to the plus electrode 18 via a ground line, and the minus side of the DC power source 22 is connected to the minus electrode.
実施例の微粒子化装置16は、内部に溶液10
0が収納され噴出口24が帯電用プラス電極18
を介してガラス基板10の表面に対向配置された
噴霧器26と、内部にキヤリアガスとして例えば
窒素ガスが封入されたガスボンベ28と、を含
み、ガスボンベ28内に封入されたキヤリアガス
は流量計30、バルブ32、ノズル噴出口34を
介して噴霧器26内に噴出される。 The atomization device 16 of the embodiment has a solution 10 inside.
0 is housed and the ejection port 24 is the positive electrode 18 for charging.
a gas cylinder 28 in which nitrogen gas, for example, is sealed as a carrier gas, and a flow meter 30 and a valve 32. , is ejected into the atomizer 26 through the nozzle outlet 34.
このようにしてノズル34の先端からキヤリア
ガスが噴出されると、このキヤリアガスの噴出に
より噴霧器26内に収納された溶液100が微粒
子化し、電極18によりプラス電位に帯電され、
ガラス基板10に向け噴出されることになる。 When the carrier gas is ejected from the tip of the nozzle 34 in this manner, the solution 100 stored in the sprayer 26 is atomized by the ejection of the carrier gas, and is charged to a positive potential by the electrode 18.
It will be ejected toward the glass substrate 10.
透明導電膜の形成方法
本実施例の装置は以上の構成から成り、次に実
施例の装置を用いて行なわれる透明導電膜の形成
方法を、噴霧器26の噴出口24とガラス基板1
0の表面との距離を10cmに設定した場合を例に取
り説明する。Method for Forming a Transparent Conductive Film The apparatus of this embodiment has the above-described configuration.
An example will be explained in which the distance to the surface of 0 is set to 10 cm.
実施例においては、まず透明導電膜材料を含む
溶液100として、酢酸n―ブチル10c.c.に塩酸1
c.c.を加えた溶液に三塩化インジウムを10g、四塩
化すずを2g溶かした溶液を形成し、該溶液10
0を噴霧器26内に収納する。これに並行して、
ヒータ14によりガラス基板10を約400℃に加
熱しておき、後述する透明導電膜の形成が容易な
状態とする。 In the example, first, as a solution 100 containing a transparent conductive film material, 10 c.c.
A solution is formed by dissolving 10 g of indium trichloride and 2 g of tin tetrachloride in a solution containing cc.
0 is stored in the atomizer 26. In parallel to this,
The glass substrate 10 is heated to about 400° C. by the heater 14 to make it easy to form a transparent conductive film, which will be described later.
そして、直流電源22によりマイナス電極20
にマイナス15kVの電圧を印加すると、ガラス基
板10内に含まれるアルカリイオンはプラスに帯
電しているためマイナス電極20側、すなわちガ
ラス基板10の背面側に引寄せられ、ガラス基板
10の表面側には例えば酸素イオン等のマイナス
イオンが多く存在するようになり、この結果、ガ
ラス基板10の表面側はマイナス電位に帯電しプ
ラス電極18との間に不平等電界が形成され、プ
ラス電極18の周囲にはコロナ放電が発生する。 Then, the negative electrode 20 is
When a voltage of minus 15 kV is applied to the glass substrate 10 , the alkali ions contained in the glass substrate 10 are positively charged and are attracted to the negative electrode 20 side, that is, the back side of the glass substrate 10 , and are attracted to the front side of the glass substrate 10 . For example, there are many negative ions such as oxygen ions, and as a result, the surface side of the glass substrate 10 is charged to a negative potential, and an unequal electric field is formed between it and the positive electrode 18. corona discharge occurs.
この状態において、バルブ32を操作しガスボ
ンベ28から1気圧のキヤリアガスを3/分で
噴霧器26に送り込むと、噴霧器26内に収納さ
れた溶液100はその粘性係数が数cmポアズと小
さいことから容易に霧化し、平均粒径が数μmの
微粒子となつて噴出口24からガラス基板10の
表面に向け噴出される。 In this state, when the valve 32 is operated to send carrier gas of 1 atm from the gas cylinder 28 to the atomizer 26 at a rate of 3/min, the solution 100 stored in the atomizer 26 can be easily absorbed because its viscosity coefficient is as small as several cm poise. The particles are atomized into fine particles having an average particle diameter of several μm, and are ejected from the ejection port 24 toward the surface of the glass substrate 10 .
この際、前述したように、プラス電極18の周
囲にはコロナ放電が発生しているため、噴霧器2
6の噴出口24を介して噴出される微粒子はこの
コロナ放電により正電位に帯電される。そして、
該帯電微粒子は、表面がマイナス電位に帯電した
ガラス基板10に向け静電力をもつて吸引され、
ガラス基板10の表面に付着し透明導電膜を形成
していく。 At this time, as described above, since corona discharge is occurring around the positive electrode 18, the sprayer 2
The fine particles ejected through the ejection port 24 of No. 6 are charged to a positive potential by this corona discharge. and,
The charged fine particles are attracted with electrostatic force toward the glass substrate 10 whose surface is charged to a negative potential,
It adheres to the surface of the glass substrate 10 to form a transparent conductive film.
このように、本発明によれば、帯電した微粒子
のプラス電位とガラス基板10の表面のマイナス
電位との間に発生する静電力により微粒子をガラ
ス基板10の表面に付着させるため、ガラス基板
10の表面微粒子を高密度でかつ気流の乱れ等の
影響を受けることなく付着させることができ、こ
の結果ガラス基板10上に均一な膜厚の透明導電
膜を形成することが可能となる。 As described above, according to the present invention, the fine particles are attached to the surface of the glass substrate 10 by the electrostatic force generated between the positive potential of the charged fine particles and the negative potential of the surface of the glass substrate 10. Surface fine particles can be attached at high density without being affected by airflow turbulence, etc., and as a result, it is possible to form a transparent conductive film with a uniform thickness on the glass substrate 10.
更に、本発明によれば、この透明導電膜の形成
時に、ガラス基板10中に含まれるアルカリイオ
ンはマイナス電極20により基板の背面側に引寄
せられているため、ガラス基板10上に形成され
る透明導電膜へのアルカリイオンの拡散侵入を有
効に防止することが可能となる。 Furthermore, according to the present invention, when forming this transparent conductive film, the alkali ions contained in the glass substrate 10 are attracted to the back side of the substrate by the negative electrode 20, so that the alkali ions are formed on the glass substrate 10. It becomes possible to effectively prevent alkali ions from diffusing into the transparent conductive film.
このように、本発明によれば、ガラス基板10
上に均一な膜厚でかつアルカリイオンの拡散侵入
がない透明導電膜を形成することが可能となり、
この結果、透明導電膜の内部及びその表面での光
の吸収、散乱等の発生を有効に防止し高い光透過
率を発揮することが可能となり、しかも透明導電
膜中における微視的な隙間あるいは空間が減少
し、拡散侵入するアルカリイオンによる電子のト
ラツプもなくなり透明導電膜自体の比抵抗を大幅
に低減させることが可能となる。 Thus, according to the present invention, the glass substrate 10
It is now possible to form a transparent conductive film with a uniform thickness and no diffusion and intrusion of alkali ions.
As a result, it is possible to effectively prevent the occurrence of light absorption, scattering, etc. inside the transparent conductive film and on its surface, and to achieve high light transmittance. The space is reduced and electron traps caused by diffused alkali ions are eliminated, making it possible to significantly reduce the resistivity of the transparent conductive film itself.
更に、本発明によれば、基板10上への透明導
電膜の形成を静電力を用いて行つているため、微
粒子のガラス基板10表面への付着効率が著しく
向上し、この結果透明導電膜の製膜速度が飛躍的
に増大し工業生産性の向上を図ることが可能とな
る。 Furthermore, according to the present invention, since the transparent conductive film is formed on the substrate 10 using electrostatic force, the adhesion efficiency of fine particles to the surface of the glass substrate 10 is significantly improved, and as a result, the transparent conductive film is The film forming speed increases dramatically, making it possible to improve industrial productivity.
また、本実施例においては、使用する溶液10
0の粘性係数が比較的小さいことから、キヤリア
ガスの噴出によつて形成される微粒子の微径も小
さく、この結果電極18,20間に印加する電圧
を約15KV程度の低い値に設定しても十分に透明
導電膜を形成することが可能であり、この結果、
装置全体を低コストのものとすることが可能とな
る。 In addition, in this example, the solution used was 10
Since the viscosity coefficient of 0 is relatively small, the diameter of the fine particles formed by the jetting of the carrier gas is also small, and as a result, even if the voltage applied between the electrodes 18 and 20 is set to a low value of about 15 KV. It is possible to form a sufficiently transparent conductive film, and as a result,
It becomes possible to reduce the cost of the entire device.
透明導電膜の特性比較
次に、本発明の方法により形成された透明導電
膜の特性と従来の方法により形成された透明導電
膜の特性とを比較して説明する。Comparison of Characteristics of Transparent Conductive Film Next, the characteristics of the transparent conductive film formed by the method of the present invention will be compared with those of the transparent conductive film formed by the conventional method.
第2図には、本発明の方法に係る透明導電膜と
従来法による透明導電膜との可視光透過率が示さ
れており、従来の透明導電膜の可視光透過率20
0は同図からも明らかなように平均で約70%であ
るのに対し、本発明に係る透明導電膜はその可視
光透過率300は平均で約85%程度まで向上して
いることが理解される。 FIG. 2 shows the visible light transmittance of the transparent conductive film according to the method of the present invention and the transparent conductive film according to the conventional method. The visible light transmittance of the conventional transparent conductive film is 20.
As is clear from the figure, the visible light transmittance of the transparent conductive film according to the present invention is approximately 70%, whereas the visible light transmittance of the transparent conductive film according to the present invention is improved to approximately 85% on average. be done.
同様に、本発明と従来の透明導電膜の比抵抗を
比較すると、従来の透明導電膜はその比抵抗が約
10-3Ωcmであるのに対し、本発明に係る透明導電
膜はその比抵抗が4×10-4Ωcmと大幅に小さく形
成され、その電気特性が向上していることが理解
される。 Similarly, when comparing the specific resistance of the present invention and the conventional transparent conductive film, the conventional transparent conductive film has a specific resistance of approximately
10 -3 Ωcm, whereas the transparent conductive film according to the present invention has a much smaller specific resistance of 4×10 -4 Ωcm, and it is understood that its electrical properties are improved.
また、ガラス基板10上への微粒子の付着効率
を比較すると、従来方法によれば、その付着効率
は約30%程度であつたのに対し、本発明によれば
その付着効率は80%程度まで飛躍的に増大し、こ
の結果その製膜速度も従来の500Å/分に対し
2000Å/分まで向上することが可能となる。 Furthermore, when comparing the adhesion efficiency of fine particles onto the glass substrate 10, according to the conventional method, the adhesion efficiency was about 30%, whereas according to the present invention, the adhesion efficiency was about 80%. As a result, the film formation speed has increased dramatically compared to the conventional 500 Å/min.
It becomes possible to improve the speed up to 2000 Å/min.
このように、本発明によれば、従来の透明導電
膜に比し均一な膜厚で光学特性、電気特性に優れ
た透明導電膜を形成することができ、しかもその
形成に際し、微粒子の付着効率も大幅に改善する
ことが可能となる。 As described above, according to the present invention, it is possible to form a transparent conductive film with a uniform thickness and superior optical properties and electrical properties compared to conventional transparent conductive films, and when forming the film, the adhesion efficiency of fine particles is improved. can also be significantly improved.
他の実施例
なお、前記実施例においては、プラス電極18
をアース電位とし、マイナス電極22に−15KV
の電圧を印加したが、本発明はこれに限らず、例
えばプラス電極に+15KVの電圧を印加し、マイ
ナス電極20をアース電位とすることも可能であ
り、また、プラス電極及びマイナス電極をそれぞ
れアースすることなく両者の間に15KVの直流電
圧をそのまま印加しても同様の効果を発揮するこ
とが可能となる。Other Embodiments Note that in the embodiment, the positive electrode 18
is the ground potential, and -15KV is applied to the negative electrode 22.
However, the present invention is not limited to this. For example, it is also possible to apply a voltage of +15 KV to the positive electrode and set the negative electrode 20 to the ground potential. Alternatively, the positive electrode and the negative electrode can be respectively grounded. The same effect can be achieved even if a 15KV DC voltage is directly applied between the two without any change.
また、前記実施例においては、噴霧器26内に
収納された溶液100としてその溶媒に酢酸n―
ブチルを使用し、またガスボンベ28内に封入さ
れたキヤリアガスとして窒素ガスを用い、いわゆ
る還元雰囲気中で透明導電膜を製膜する場合を例
にとり説明したが、本発明はこれに限らず、他の
溶液も用いることができ、例えば溶液100の溶
媒として例えば水を用い、キヤリアガスとして例
えば空気を用い、酸化雰囲気中で透明導電膜を形
成し、その後還元熱処理を施しても、前記実施例
の場合と同様の効果を得ることが可能となる。 Further, in the above embodiment, acetic acid n-
Although the case where a transparent conductive film is formed in a so-called reducing atmosphere using butyl and nitrogen gas sealed in the gas cylinder 28 as a carrier gas has been described as an example, the present invention is not limited to this, and can be applied to other methods. A solution can also be used. For example, even if a transparent conductive film is formed in an oxidizing atmosphere using water as the solvent of the solution 100 and air as a carrier gas, and then subjected to a reduction heat treatment, the result will not be the same as in the case of the above embodiment. It becomes possible to obtain similar effects.
また、前記実施例において、微粒子化装置16
はキヤリアガスを用いているためガラス基板10
上への帯電微粒子の付着は、前述した静電力とキ
ヤリアガスとがお互いに作用し合い行なわれてい
たが、本発明はこれに限らず、この微粒子化装置
16として噴霧器26、キヤリアガス28の代り
に超音波振動子を用い該振子の振動により溶液1
00を霧状の微粒子とすることも可能であり、こ
のようにすることにより、キヤリアガスを使用す
る場合に比し付着効率が向上し、ガスボンベ2
8、流量計30、バルブ32等が不要となり装置
全体を極めて簡単なものとすることが可能とな
る。 In addition, in the embodiment, the atomization device 16
Because carrier gas is used, the glass substrate 10
The adhesion of charged fine particles onto the top was carried out by the interaction of the electrostatic force and the carrier gas described above, but the present invention is not limited to this. Using an ultrasonic vibrator, the solution 1 is generated by vibration of the pendulum.
It is also possible to make 00 into atomized fine particles, and by doing so, the adhesion efficiency is improved compared to the case where a carrier gas is used, and the gas cylinder 2
8. The flow meter 30, valve 32, etc. are not required, making it possible to make the entire device extremely simple.
また、前記実施例においては、ガラス基板10
を垂直に設置し、帯電微粒子を水平方向から付着
させてくる。このため、ヒータ14によつて加熱
されたガラス基板10の表面において自然対流が
発生し、基板10が冷却されまたこの自然対流に
より微粒子の一部が運び去られ付着効率が低下す
るという問題がある。このため、本発明において
は、ガラス基板10をその表面が下向きになるよ
うに水平に設置し、ガラス基板10の下側から帯
電微粒子を付着させることにより、基板10の表
面での自然対流の発生を有効に防止し微粒子の付
着効率を更に向上させることが可能となる。 Further, in the embodiment, the glass substrate 10
is installed vertically, and charged particles are applied horizontally. Therefore, there is a problem that natural convection occurs on the surface of the glass substrate 10 heated by the heater 14, the substrate 10 is cooled, and some of the fine particles are carried away by this natural convection, reducing the adhesion efficiency. . Therefore, in the present invention, the glass substrate 10 is placed horizontally with its surface facing downward, and charged fine particles are attached from the bottom of the glass substrate 10 to generate natural convection on the surface of the substrate 10. This makes it possible to effectively prevent this and further improve the adhesion efficiency of fine particles.
なお、前記実施例においては、電極18,20
間に15KVの電圧を印加する場合を例にとり説明
したが、本発明はこれに限らず、ガラス基板10
とプラス電極18間の距離及びその他の条件によ
り印加電圧を任意の値に設定することが可能であ
る。 In addition, in the embodiment, the electrodes 18, 20
Although the explanation has been given taking as an example the case where a voltage of 15KV is applied between the glass substrates 10 and 10, the present invention is not limited to this.
The applied voltage can be set to an arbitrary value depending on the distance between the positive electrode 18 and the positive electrode 18 and other conditions.
[発明の効果]
以上説明したように、本発明によれば、ガラス
基板の表面に均一な膜厚で光学特性、電気特性に
優れた透明導電膜を形成することができ、しかも
この透明導電膜を形成するに際し微粒子の付着効
率を高めその膜材料を有効に用いることが可能と
なる。[Effects of the Invention] As explained above, according to the present invention, it is possible to form a transparent conductive film with a uniform thickness and excellent optical properties and electrical properties on the surface of a glass substrate. When forming a film, it is possible to increase the adhesion efficiency of fine particles and effectively use the film material.
第1図は本発明に係る方法を適用する装置の好
適な実施例を示す説明図、第2図は本発明の方法
と従来方法により形成さ透明導電膜の特性図であ
る。
10…ガラス基板、18…帯電用プラス電極、
20…静電力発生用マイナス電極。
FIG. 1 is an explanatory diagram showing a preferred embodiment of an apparatus to which the method according to the present invention is applied, and FIG. 2 is a characteristic diagram of transparent conductive films formed by the method of the present invention and the conventional method. 10... Glass substrate, 18... Positive electrode for charging,
20...Negative electrode for electrostatic force generation.
Claims (1)
し、ガラス基板の背面に静電力発生用マイナス電
極を配置し、 透明導電膜材料を含む溶液を微粒子化した後、
前記帯電用プラス電極によりこの微粒子を正電位
に帯電させ、帯電微粒子とガラス基板との間に発
生する静電力により帯電微粒子をガラス基板表面
に付着させ、ガラス基板表面に透明導電膜を形成
することを特徴とする透明導電膜の形成方法。 2 特許請求の範囲1記載の方法において静電力
発生用マイナス電極はガラス基板の背面全域に当
設配置されガラス基板表面と帯電用プラス電極と
の間に電界を形成することを特徴とする透明導電
膜の形成方法。 3 特許請求の範囲1、2のいずれかに記載の方
法において、透明導電膜材料を含む溶液をガラス
基板に向け所定のキヤリアガスを用いて微粒子状
に噴出させ、該噴出経路に帯電用プラス電極を配
置し、この微粒子を帯電させることを特徴とする
透明導電膜の形成方法。 4 特許請求の範囲1、2のいずれかに記載の方
法において、透明導電膜材料を含む溶液を超音波
振動子を用いて微粒子化し、該微粒子を帯電用プ
ラス電極を用いて帯電させ、ガラス基板表面に付
着させることを特徴とする透明導電膜の形成方
法。 6 特許請求の範囲1〜4のいずれかに記載の方
法において、ガラス基板を表面が下向きになるよ
うに水平に設置し、基板下方側から帯電微粒子を
付着させることを特徴とする透明導電膜の形成方
法。[Claims] 1. A positive charging electrode is placed on the front side of the glass substrate, a negative electrode for electrostatic force generation is placed on the back side of the glass substrate, and after a solution containing a transparent conductive film material is atomized,
The fine particles are charged to a positive potential by the positive charging electrode, and the charged fine particles are attached to the surface of the glass substrate by electrostatic force generated between the charged fine particles and the glass substrate, thereby forming a transparent conductive film on the surface of the glass substrate. A method for forming a transparent conductive film characterized by: 2. A transparent conductive method according to claim 1, characterized in that the negative electrode for generating electrostatic force is disposed over the entire back surface of the glass substrate to form an electric field between the surface of the glass substrate and the positive electrode for charging. How to form a film. 3. In the method according to either claim 1 or 2, a solution containing a transparent conductive film material is ejected in the form of fine particles toward a glass substrate using a predetermined carrier gas, and a positive electrode for charging is provided in the ejection path. A method for forming a transparent conductive film, the method comprising disposing the fine particles and charging the fine particles. 4. In the method according to any one of claims 1 and 2, a solution containing a transparent conductive film material is made into fine particles using an ultrasonic vibrator, the fine particles are charged using a positive charging electrode, and the glass substrate is charged. A method for forming a transparent conductive film, the method comprising depositing it on a surface. 6. In the method according to any one of claims 1 to 4, a glass substrate is placed horizontally with the surface facing downward, and charged fine particles are attached to the transparent conductive film from the lower side of the substrate. Formation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59132420A JPS6111250A (en) | 1984-06-27 | 1984-06-27 | Method of forming transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59132420A JPS6111250A (en) | 1984-06-27 | 1984-06-27 | Method of forming transparent conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6111250A JPS6111250A (en) | 1986-01-18 |
| JPH0513097B2 true JPH0513097B2 (en) | 1993-02-19 |
Family
ID=15080957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59132420A Granted JPS6111250A (en) | 1984-06-27 | 1984-06-27 | Method of forming transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6111250A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4058822B2 (en) * | 1997-09-30 | 2008-03-12 | 住友金属鉱山株式会社 | Selective permeable membrane coating solution, selective permeable membrane and selective permeable multilayer membrane |
| JP4096277B2 (en) * | 1998-09-22 | 2008-06-04 | 住友金属鉱山株式会社 | Solar shading material, coating liquid for solar shading film, and solar shading film |
| JP4096278B2 (en) * | 1998-12-10 | 2008-06-04 | 住友金属鉱山株式会社 | Solar shading film coating solution and solar shading film using the same |
| FI20080674A0 (en) * | 2008-12-22 | 2008-12-22 | Beneq Oy | Procedure for coating glass |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2202857A1 (en) * | 1972-10-16 | 1974-05-10 | Engelhard Min & Chem | Pyrolytic organo-metallic hot glass coating - by electrically assisted spraying, esp for decorative film prodn |
| JPS5474819A (en) * | 1977-11-26 | 1979-06-15 | Nissho Kk | Method of coloring glass surface |
-
1984
- 1984-06-27 JP JP59132420A patent/JPS6111250A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6111250A (en) | 1986-01-18 |
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