JPH0519982B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a semiconductor integrated circuit device, and particularly to the structure of an aluminum pad electrode.

(Prior Art) Conventionally, pad electrodes of semiconductor integrated circuit devices are often made of aluminum, and are provided adjacent to internal aluminum wiring groups on a semiconductor substrate. As is well known, a pad electrode is an external electrode of a semiconductor integrated circuit device, and is located on the top layer of a semiconductor substrate, and a bonding wire is thermocompressed onto this surface during assembly. During this thermocompression bonding, the aluminum lead conductor parts that form the connections with the aluminum pad electrodes and the internal aluminum wiring expand in the direction of bonding stress propagation, so it is necessary to avoid contact with the internal aluminum wiring. The conductor portion is separated from the adjacent internal aluminum wiring by about 20 to 30 μm.

(Problems to be Solved by the Invention) However, as microfabrication technology progresses and semiconductor devices become more dense and faster than they are today, the degree of miniaturization of electronic circuits including active elements is becoming increasingly difficult. In comparison, delays around aluminum pad electrodes have become more noticeable, and countermeasures are desired. That is,
The distance between normal internal aluminum wiring is only 3 ~
Even though it is only 4 μm, the distance between the pad electrodes is
It is beginning to be noticed that the size has reached 10 times, and reduction of this size is desired.

[Purpose of the invention]

SUMMARY OF THE INVENTION In view of the above circumstances, an object of the present invention is to provide a semiconductor integrated circuit device having an aluminum pad electrode structure capable of reducing the distance between adjacent internal aluminum wiring lines.

[Structure of the Invention] According to the present invention, a semiconductor integrated circuit device includes a semiconductor substrate, an aluminum pad electrode and an internal aluminum wiring group formed adjacent to each other on a field insulating film of the semiconductor substrate, and an aluminum lead-out conductor portion of an aluminum pad electrode electrically connected to at least one of the aluminum wiring groups; and a slit-like through hole provided therein.

[Means for solving problems]

That is, according to the present invention, slit-shaped through holes are arranged on either or both surfaces of the aluminum pad electrode and the aluminum lead-out conductor portion in a direction facing the propagation direction of stress generated during bonding. will be established. Specifically, these through holes are placed parallel to the adjacent internal aluminum wiring group on the aluminum lead conductor, and on a part of the edge surface facing the aluminum lead conductor or the edge of the electrode surface on the aluminum pad electrode. They are arranged circumferentially along the circumference passing through the end.

[Effect]

Here, the provided slit-shaped through-hole deforms in response to the bonding stress that propagates on the surface of the aluminum pad electrode or the aluminum lead conductor, absorbing this stress, and relaxing the expansion of the entire pad electrode. act. Therefore, the distance between the aluminum lead-out conductor and the adjacent internal aluminum wiring is reduced to 1/2 to 1/3 of the conventional one. At this time, the shape of the through hole to be provided is not limited to a rectangular shape, but can also be set to a circular shape, an oval shape, or any other arbitrary shape. The present invention will be described in detail below with reference to the drawings.

〔Example〕

Figures 1a and 1b are plan views of the vicinity of aluminum pad electrodes showing one embodiment of the present invention, and their A-
It is an A′ cross-sectional view. According to this embodiment, the semiconductor integrated circuit device of the present invention includes a semiconductor substrate 1, an aluminum pad electrode 3 formed adjacent to each other on the field insulating film 2, and an internal aluminum wiring group 4.
, an aluminum lead-out conductor part 5 of an aluminum pad electrode electrically connected to one of the internal aluminum wirings, and a slit-shaped penetration arranged parallel to the internal aluminum wiring group 4 on the surface of this aluminum lead-out conductor part 5. It includes a hole 6 and an insulating protective film 7 for the aluminum pad electrode.

According to this embodiment, a part of the bonding stress generated when the bonding wire is thermocompressed onto the aluminum pad electrode 3 is propagated on the aluminum lead conductor portion 5 in a direction perpendicular to the internal aluminum wiring group 4. This force is consumed by deforming the slit-like through hole 6. Therefore, the aluminum lead-out conductor portion 5
Since the elongation in the horizontal axis direction of
It can be reduced to 1/3.

Figures 2a and 2b are diagrams showing how the slit-shaped through-hole absorbs stress during bonding according to the present invention, which correspond to before and after the bonding process, respectively, and show that the slit-shaped through-hole 5 deforms when absorbing stress. This shows the situation.

3 and 4 are plan views of the vicinity of aluminum pad electrodes showing other embodiments of the present invention, respectively. These two embodiment drawings have the same reference numerals as those of the previous embodiment except that the insulating protective film 7 is omitted. Here, in the embodiment shown in FIG. 3, the slit-shaped through hole 6 is formed on the edge surface of the aluminum pad electrode at a position facing the aluminum lead-out conductor 5, and in the embodiment shown in FIG. They are arranged circumferentially on the surface of the aluminum pad electrode 3 as well as on the edge surface of the aluminum pad electrode 3. In this case, in any of the embodiments, the slit-like through hole 6 can effectively absorb the bonding stress and significantly reduce the elongation of the entire aluminum pad electrode. Particularly, when it is provided in both the pad electrode and the lead-out conductor portion as in the embodiment shown in FIG. 4, the elongation relaxation effect becomes even more remarkable.

Of course, the above embodiments are merely illustrative of the present invention, and the shape, arrangement, and combination of the slit-like through holes 6 can be appropriately determined in accordance with each individual semiconductor device. Further, although it becomes necessary to increase the size of the aluminum lead-out conductor portion 5 to some extent, this does not cause any particular problem since it has no relation to the reduction of the distance L from the internal aluminum wiring group 4.

〔Effect of the invention〕

As explained in detail above, according to the present invention,
By providing a slit-shaped through hole on either or both of the bonding surface of the aluminum pad electrode and the aluminum lead-out conductor, the mechanical stress generated during bonding is absorbed and the entire aluminum pad electrode is expanded. Aluminum and
The distance between the pad electrode and the internal aluminum wiring group disposed adjacent thereto can be reduced to 1/2 to 1/3 of the conventional distance. That is, in conjunction with electronic circuit miniaturization technology, it is also possible to reduce the area around the pad electrode, which can have a significant effect on improving the degree of integration.

[Brief explanation of drawings]

Figures 1a and 1b are plan views of the vicinity of aluminum pad electrodes showing one embodiment of the present invention, and their A-
A′ sectional view, FIGS. 2a and b are diagrams of bonding stress absorption state of the slit-like through hole according to the present invention, and FIGS. 3 and 4 are diagrams showing other embodiments of the present invention near the aluminum pad electrode. FIG. 1... Semiconductor substrate, 2... Field insulating film,
3... Aluminum pad electrode, 4... Internal aluminum wiring group, 5... Aluminum lead-out conductor portion, 6... Slit-shaped through hole, 7... Insulating protective film, L... Separation distance.

Claims (1)

[Scope of Claims] 1. A semiconductor substrate, an aluminum pad electrode and an internal aluminum wiring group formed adjacent to each other on a field insulating film of the semiconductor substrate, and electrically connected to at least one of the internal aluminum wiring group. an aluminum lead-out conductor portion of the aluminum pad electrode, and slit-shaped through holes arranged on the surface of the aluminum pad electrode and/or the aluminum lead-out conductor portion in a direction facing the bonding stress propagation direction. A semiconductor integrated circuit device comprising: 2. The semiconductor integrated circuit device according to claim 1, wherein the slit-shaped through hole is arranged on the surface of the aluminum lead-out conductor portion in parallel with the internal aluminum wiring group. 3. Claim 1, characterized in that the slit-shaped through hole is arranged on the edge surface of the aluminum pad electrode, facing the aluminum lead-out conductor part.
The semiconductor integrated circuit device described in . 4. The semiconductor integrated circuit device according to claim 1, wherein the slit-like through holes are arranged circumferentially on the edge surface of the aluminum pad electrode.