JPH0521332B2 - - Google Patents
Info
- Publication number
- JPH0521332B2 JPH0521332B2 JP60029458A JP2945885A JPH0521332B2 JP H0521332 B2 JPH0521332 B2 JP H0521332B2 JP 60029458 A JP60029458 A JP 60029458A JP 2945885 A JP2945885 A JP 2945885A JP H0521332 B2 JPH0521332 B2 JP H0521332B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- cooling plate
- temperature
- exposure apparatus
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、露光室が減圧雰囲気とされた露光装
置に関し、特にマスクを真空中で効果的に冷却す
るこてが可能な露光装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an exposure apparatus in which an exposure chamber has a reduced pressure atmosphere, and more particularly to an exposure apparatus capable of effectively cooling a mask in a vacuum.
［従来の技術］
最近のICパターン等の微細化に伴なうリソグ
ラフイーの重要な問題の一つに位置合わせズレが
挙げられる。[Prior Art] One of the important problems in lithography associated with the recent miniaturization of IC patterns, etc. is misalignment.
位置合わせズレは、通常、並進モード、回転モ
ード及び伸縮モードに分解する事ができる。この
うち並進モードと回転モードは位置合わせ時に修
正が可能である。しかし、伸縮モードについては
位置合わせだけでは修正が困難である。 Misalignment can usually be broken down into translational mode, rotational mode, and stretching mode. Of these, the translation mode and rotation mode can be modified during alignment. However, in the expansion/contraction mode, it is difficult to correct the positioning alone.
この伸縮モードの位置合わせズレが発生する原
因の一つとして、露光時にマスクに照射される露
光ビーム例えばＸ線がマスクの温度を上昇させて
位置合わせ時と露光時とで温度差を生じる事に伴
なうマスクの熱膨張による伸縮が考えられる。 One of the causes of misalignment in the expansion/contraction mode is that the exposure beam, e.g. Expansion and contraction due to accompanying thermal expansion of the mask is considered.
この露光時におけるマスクの温度上昇を軽減す
るために、従来の露光装置については、マスク表
面上に冷却したヘリウムを流す事が提案されてい
る〔ジヤーナル オブ バキユーム サイエンス
1983年第４号（Journal of Vacum Science
Technology Ｂ(1)４ Oct−Dec.1352、1983）〕。
しかし、ウエハに照射されるＸ線量を増加するた
めに露光室を真空排気されるＸ線露光装置では、
ヘリウムを流す事によつてマスクを冷却する方法
を採用する事は不可能である。 In order to reduce the temperature rise of the mask during exposure, it has been proposed for conventional exposure equipment to flow cooled helium over the mask surface [Journal of Vacuum Science]
1983 No. 4 (Journal of Vacum Science
Technology B(1)4 Oct-Dec.1352, 1983)].
However, in X-ray exposure equipment where the exposure chamber is evacuated to increase the amount of X-rays irradiated to the wafer,
It is not possible to employ a method of cooling the mask by flowing helium.
［発明の目的］
本発明は、減圧雰囲気とされた露光室内のマス
クの温度上昇を軽減させかつその温調する事を目
的とするものである。[Object of the Invention] The object of the present invention is to reduce the temperature rise of a mask in an exposure chamber that is in a reduced pressure atmosphere and to control the temperature.
［実施例の説明］
以下実施例に基づいて本発明を詳細に説明す
る。[Description of Examples] The present invention will be described in detail based on Examples below.
第１図は、本発明の一実施例に係るＸ線露光装
置の構成を示す。この装置は、真空排気された露
光室内に、露光時のマスクの温度上昇を軽減し、
かつ温調する事を目的とした冷却装置を具備して
いる。同図において、１はマスク、２はウエハ、
３はステージ、４は冷却板、５Ａは冷却板４を冷
却する冷却流体の導入管、５Ｂはその冷却流体の
引き出し管、，６はＸ線源から発生し、拡がり角
を制限されたＸ線である。 FIG. 1 shows the configuration of an X-ray exposure apparatus according to an embodiment of the present invention. This device is installed in an evacuated exposure chamber to reduce the temperature rise of the mask during exposure.
It is also equipped with a cooling device for temperature control. In the figure, 1 is a mask, 2 is a wafer,
3 is a stage, 4 is a cooling plate, 5A is an inlet pipe for the cooling fluid that cools the cooling plate 4, 5B is an extraction pipe for the cooling fluid, and 6 is an X-ray generated from an X-ray source with a limited divergence angle. It is.
第１図の装置においては、露光時、ステージ３
上にウエハ２が装着されていてウエハ２上に所定
の間隔をもつてマスク１が保持されている。そし
て、マスク１の上方に位置合わせ時のマスク温度
T1より低い温度T2に保たれている冷却板４が設
置されている。この冷却板４は、その中に流体が
循環できる管が埋め込まれていて冷却流体導入管
５Ａから温度T2の冷却流体が冷却板４の中を循
環し、冷却板４の温度をT2にして冷却流体取り
出し管５Ｂから出ていく。また、冷却板４の中央
には照射用のＸ線６をさえぎらない程度の穴７が
あけられている。Ｘ線６がマスク１に照射される
とマスク１はＸ線６のエネルギーを吸収し、その
エネルギーが熱となり、マスク１の温度が上昇す
る。それと同時に、真空排気された露光室中で
は、マスク１の熱は、２つの伝熱方法によつてマ
スク１外に伝熱される。１つはマスクを保持する
部材に伝熱する伝導伝熱であり、もう１つはマス
クを囲む物体に放射される輻射伝熱である。マス
ク１の温度上昇を軽減するにはこのマスク１外に
伝熱される熱を多くする事が必要である。ここで
は、上述の様に冷却板４をマスク１上方に設置す
る事により、輻射伝熱量を増加する事ができる事
になり、マスク１の温度上昇を軽減する事ができ
る。また、冷却流体の温度を変える事によりマス
ク１の温度調節を行なう事も可能である。 In the apparatus shown in Fig. 1, during exposure, stage 3
A wafer 2 is mounted thereon, and a mask 1 is held on the wafer 2 at a predetermined interval. Then, the mask temperature at the time of alignment above mask 1.
A cooling plate 4 is installed which is maintained at a temperature T2 lower than T1 . This cooling plate 4 has a pipe embedded therein through which fluid can circulate, and cooling fluid at a temperature of T 2 is circulated through the cooling plate 4 from the cooling fluid introduction pipe 5A to bring the temperature of the cooling plate 4 to T 2 . The cooling fluid then exits from the cooling fluid extraction pipe 5B. Further, a hole 7 is formed in the center of the cooling plate 4 to the extent that it does not block the X-rays 6 for irradiation. When the mask 1 is irradiated with the X-rays 6, the mask 1 absorbs the energy of the X-rays 6, the energy becomes heat, and the temperature of the mask 1 increases. At the same time, in the evacuated exposure chamber, heat from the mask 1 is transferred to the outside of the mask 1 by two heat transfer methods. One is conduction heat transfer, in which heat is transferred to the member that holds the mask, and the other is radiation heat transfer, which is radiated to objects surrounding the mask. In order to reduce the temperature rise of the mask 1, it is necessary to increase the amount of heat transferred to the outside of the mask 1. Here, by installing the cooling plate 4 above the mask 1 as described above, the amount of radiant heat transfer can be increased, and the temperature rise of the mask 1 can be reduced. It is also possible to adjust the temperature of the mask 1 by changing the temperature of the cooling fluid.
なお、上記実施例の冷却板において、マスク側
の面の材質をセラミツクスのような輻射率の高い
ものとする事によつて更に輻射伝熱量を増やすこ
とができ、これにより、マスクの温度上昇がより
軽減され、マスクの温度調節のレスポンスもよく
なる。 In addition, in the cooling plate of the above embodiment, the amount of radiant heat transfer can be further increased by using a material with a high emissivity such as ceramics for the surface on the mask side, thereby reducing the temperature rise of the mask. It will be further reduced and the response of the mask's temperature adjustment will also be improved.
また上記実施例では冷却流体の温度を調節し
て、マスクの温調をしていたが、冷却板の温度が
一定でもマスクと冷却板の輻射伝熱量は距離に反
比例するから、マスクと冷却板の距離を可変にす
る事によりマスクの温度調節を行なうことも可能
である。 Furthermore, in the above embodiment, the temperature of the mask was controlled by adjusting the temperature of the cooling fluid, but even if the temperature of the cooling plate is constant, the amount of radiant heat transfer between the mask and the cooling plate is inversely proportional to the distance between the mask and the cooling plate. It is also possible to adjust the temperature of the mask by making the distance variable.
また、上記実施例においては、Ｘ線露光装置に
本発明を適用した例ついて説明したが、本発明は
他のビーム例えば可視、紫外もしくは遠紫外等の
光線、または電子線等の粒子線等を用いる露光装
置についても適用可能であることは勿論である。 Furthermore, in the above embodiments, an example in which the present invention is applied to an X-ray exposure apparatus has been described, but the present invention can also be applied to other beams such as visible, ultraviolet, or far ultraviolet light, or particle beams such as electron beams. Of course, the present invention is also applicable to the exposure apparatus used.
また、上記実施例においては、ビームを遮らな
い様に冷却板４の中央に穴７を設けているが、使
用するビームに対して透過性の冷却板の場合、こ
の穴７は設けなくてもよい。 Further, in the above embodiment, the hole 7 is provided in the center of the cooling plate 4 so as not to block the beam, but if the cooling plate is transparent to the beam used, this hole 7 may not be provided. good.
［効果の説明］
以上説明したように本発明によると、減圧雰囲
気とされた露光室内においてマスク線源側に冷却
板を設置しているため、ビーム露光時のマスクの
温度上昇が軽減され、かつマスクの温度調節が可
能となつた。[Description of Effects] As explained above, according to the present invention, since a cooling plate is installed on the mask radiation source side in the exposure chamber with a reduced pressure atmosphere, the temperature rise of the mask during beam exposure is reduced, and It is now possible to adjust the temperature of the mask.
第１図は、本発明の一実施例に係るＸ線露光装
置の概略の構成図である。
１……マスク、２……ウエハ、３……ステー
ジ、４……冷却板、５Ａ……冷却流体導入管、５
Ｂ……冷却流体取り出し管、６……Ｘ線、７……
穴。
FIG. 1 is a schematic configuration diagram of an X-ray exposure apparatus according to an embodiment of the present invention. 1...Mask, 2...Wafer, 3...Stage, 4...Cooling plate, 5A...Cooling fluid introduction pipe, 5
B...Cooling fluid extraction pipe, 6...X-ray, 7...
hole.
Claims (1)
ハとを対向配置し、マスク側に配置された線源か
らのビームによりマスク上のパターン像をウエハ
上に転写する露光装置において、冷却板をマスク
に対向して線源側に配置した事を特徴とする露光
装置。 ２ 前記冷却板は、前記ビームを妨害しないため
の開口部を有するとともに、冷却流体を循環させ
るための管が埋め込まれている特許請求の範囲第
１項記載の露光装置。 ３ 前記冷却板とマスクとの間隔が可変である特
許請求の範囲第１または２項記載の露光装置。[Scope of Claims] 1. In an exposure apparatus in which a mask and a wafer are arranged facing each other in an exposure chamber with a reduced pressure atmosphere, and a pattern image on the mask is transferred onto the wafer by a beam from a radiation source arranged on the mask side. , an exposure apparatus characterized in that a cooling plate is arranged on the radiation source side facing the mask. 2. The exposure apparatus according to claim 1, wherein the cooling plate has an opening for not interfering with the beam and is embedded with a tube for circulating cooling fluid. 3. The exposure apparatus according to claim 1 or 2, wherein the distance between the cooling plate and the mask is variable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60029458A JPS61189637A (en) | 1985-02-19 | 1985-02-19 | Exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60029458A JPS61189637A (en) | 1985-02-19 | 1985-02-19 | Exposure device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61189637A JPS61189637A (en) | 1986-08-23 |
| JPH0521332B2 true JPH0521332B2 (en) | 1993-03-24 |
Family
ID=12276657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60029458A Granted JPS61189637A (en) | 1985-02-19 | 1985-02-19 | Exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61189637A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7102763B2 (en) | 2000-07-08 | 2006-09-05 | Semitool, Inc. | Methods and apparatus for processing microelectronic workpieces using metrology |
| US7264698B2 (en) | 1999-04-13 | 2007-09-04 | Semitool, Inc. | Apparatus and methods for electrochemical processing of microelectronic workpieces |
| US7399713B2 (en) | 1998-03-13 | 2008-07-15 | Semitool, Inc. | Selective treatment of microelectric workpiece surfaces |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2673517B2 (en) * | 1987-06-15 | 1997-11-05 | キヤノン株式会社 | Exposure equipment |
| JP4088728B2 (en) * | 1998-07-09 | 2008-05-21 | 株式会社ニコン | Planar motor device, driving device and exposure device |
| JP4745556B2 (en) | 2001-08-20 | 2011-08-10 | キヤノン株式会社 | Positioning apparatus, exposure apparatus, and device manufacturing method |
-
1985
- 1985-02-19 JP JP60029458A patent/JPS61189637A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7399713B2 (en) | 1998-03-13 | 2008-07-15 | Semitool, Inc. | Selective treatment of microelectric workpiece surfaces |
| US7264698B2 (en) | 1999-04-13 | 2007-09-04 | Semitool, Inc. | Apparatus and methods for electrochemical processing of microelectronic workpieces |
| US7102763B2 (en) | 2000-07-08 | 2006-09-05 | Semitool, Inc. | Methods and apparatus for processing microelectronic workpieces using metrology |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61189637A (en) | 1986-08-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |