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JPH0524615B2 - - Google Patents
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JPH0524615B2 - - Google Patents

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Publication number
JPH0524615B2
JPH0524615B2 JP58088681A JP8868183A JPH0524615B2 JP H0524615 B2 JPH0524615 B2 JP H0524615B2 JP 58088681 A JP58088681 A JP 58088681A JP 8868183 A JP8868183 A JP 8868183A JP H0524615 B2 JPH0524615 B2 JP H0524615B2
Authority
JP
Japan
Prior art keywords
pixels
displayed
sample
irradiation
irradiation point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58088681A
Other languages
Japanese (ja)
Other versions
JPS59214151A (en
Inventor
Masayuki Taira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Denshi KK filed Critical Nihon Denshi KK
Priority to JP58088681A priority Critical patent/JPS59214151A/en
Publication of JPS59214151A publication Critical patent/JPS59214151A/en
Publication of JPH0524615B2 publication Critical patent/JPH0524615B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/22Optical, image processing or photographic arrangements associated with the tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)

Description

【発明の詳細な説明】 本発明は試料表面上において荷電粒子線をデジ
タル走査し、該走査に伴なつて得られた信号に基
づいて試料像を表示する方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of digitally scanning a charged particle beam on a sample surface and displaying a sample image based on signals obtained in association with the scanning.

例えば、X線マイクロアナライザー等において
は、電子線によつて試料表面上を二次元的に走査
し、この走査に伴なつて得られるX線を検出し、
この検出信号に基づいて試料の二次元像を表示し
ている。その際、電子線の照射位置を飛び飛びに
移動させるデジタル走査をすれば、電子線による
試料損傷が少くできると共に分析時間が節約でき
る。このデジタル走査により試料の二次元像を表
示する場合、高分解能の画像を表示しようとする
際には電子線の照射位置間隔を小さくして、密に
電子線を照射すれば良いが、その場合採取しなけ
ればならないデータ量は分解能の自乗で増大し、
一画面を形成するのに極めて長時間を要する。従
つて、像を表示しようとしている領域が興味のあ
る領域か否かを判定して、データの採取を継続す
るか否かを判断したり、像をカラー表示する際に
表示色の割り当てが適切か否かを判定したりする
場合には、試料表面上における電子線の照射位置
間隔を大きくとり、粗く試料を走査して概略的な
像の全体を短時間に把握する必要がある。その場
合、従来においては表示画面上の表示点の個数が
減少するため、像は飛び飛びとなり、観察しにく
いものであつた。
For example, in an X-ray microanalyzer, the surface of a sample is scanned two-dimensionally with an electron beam, and the X-rays obtained as a result of this scanning are detected.
A two-dimensional image of the sample is displayed based on this detection signal. At this time, if digital scanning is used to move the electron beam irradiation position intermittently, damage to the sample due to the electron beam can be reduced and analysis time can be saved. When displaying a two-dimensional image of a sample using this digital scanning, if you want to display a high-resolution image, you can reduce the interval between electron beam irradiation positions and irradiate the electron beam densely. The amount of data that must be collected increases with the square of the resolution.
It takes an extremely long time to form one screen. Therefore, it is possible to determine whether or not the area in which the image is to be displayed is an area of interest, to determine whether or not to continue collecting data, and to determine whether the display color assignment is appropriate when displaying the image in color. In order to determine whether or not this is the case, it is necessary to set a large interval between the irradiation positions of the electron beam on the sample surface, roughly scan the sample, and grasp the entire rough image in a short time. In this case, in the past, the number of display points on the display screen was reduced, making the image scattered and difficult to observe.

本発明はこのような従来の欠点を解決し、試料
面上を粗く走査する場合にも視覚的に自然な画像
を表示することのできる荷電粒子線装置等におけ
る二次元データの表示方法を提供することを目的
としている。
The present invention solves these conventional drawbacks and provides a method for displaying two-dimensional data in a charged particle beam device, etc., which can display a visually natural image even when roughly scanning a sample surface. The purpose is to

本発明は、二次元的に分布する全画素のうち間
引かれた各画素に対応する照射点に荷電粒子線を
照射し、各照射点に対応する画素は各照射点より
得られた検出信号に基づいて表示すると共に各非
照射点の画素は該各非照射点に近い照射点の検出
信号に基づいて作成された代替信号によつて表示
することにより試料像を二次元的に表示するよう
にした荷電粒子線装置等における二次元画像デー
タの表示方法であつて、前記代替信号によつて表
示される画素一画面表示する毎に所定量ずつ減少
するように一画面分走査する毎に自動的に前記照
射の密度または前回の走査までの照射点と合算し
た照射点の密度を増加させつつ荷電粒子線により
試料を走査して画面表示することを特徴としてい
る。
The present invention irradiates a charged particle beam to an irradiation point corresponding to each thinned out pixel out of all pixels distributed two-dimensionally, and a pixel corresponding to each irradiation point receives a detection signal obtained from each irradiation point. The sample image is displayed two-dimensionally by displaying the pixel of each non-irradiation point using an alternative signal created based on the detection signal of the irradiation point near each non-irradiation point. A method for displaying two-dimensional image data in a charged particle beam device, etc., in which the pixels displayed by the alternative signal are automatically decreased by a predetermined amount each time one screen is displayed, each time one screen is scanned. The method is characterized in that the sample is scanned by the charged particle beam and displayed on the screen while increasing the density of the irradiation or the density of the irradiation points combined with the irradiation points up to the previous scan.

以下、図面に基づき本発明の一実施例を詳述す
る。
Hereinafter, one embodiment of the present invention will be described in detail based on the drawings.

第1図は、本発明を実施するための装置を示す
もので、図中1はX線マイクロアナライザーの筐
体であり、この筐体1内には電子銃2が配置され
ている。この電子銃2よりの電子線3は偏向器4
により偏向されて試料5に照射される。電子線3
の試料5上における照射位置を制御するため、偏
向器4には電子計算機6よりの信号に基づいて偏
向回路7において作成された偏向信号が供給され
る。8は波長分散型X線検出器であり、この検出
器8よりの検出信号は、AD変換器9を介してデ
ータ蓄積用メモリー10に供給される。このメモ
リー10よりの信号は前記電子計算機6の制御に
基づいて画像表示用の陰極線管11に供給され
る。
FIG. 1 shows an apparatus for carrying out the present invention. In the figure, 1 is a housing of an X-ray microanalyzer, and within this housing 1 an electron gun 2 is arranged. The electron beam 3 from this electron gun 2 is deflected by a deflector 4.
The beam is deflected by the beam and irradiated onto the sample 5. electron beam 3
In order to control the irradiation position on the sample 5, a deflection signal generated in a deflection circuit 7 based on a signal from an electronic computer 6 is supplied to the deflector 4. 8 is a wavelength dispersive X-ray detector, and a detection signal from this detector 8 is supplied to a data storage memory 10 via an AD converter 9. A signal from this memory 10 is supplied to a cathode ray tube 11 for image display under the control of the electronic computer 6.

このような構成において、例えば試料5の表面
上を最大100×100の画素に分解して走査及び表示
可能であるとし、又これら画素には第2図に示す
ような符号が対応付けられているものとする。ま
ず第3図に示す流れ図にあるように、走査を行な
う際に何個の画素おきに電子線を照射するかを表
わす数Nを設定する。但しNは2の累乗である
(ステツプ1)。次にこの設定数Nに基づいて、電
子計算機6より偏向回路7に制御信号を供給して
N個おきの画素、即ち画素i×N(i=0、1、
2、3、……)に対応する照射点に電子線3を照
射し、試料5を走査する。そして、この電子線3
の照射に伴つて得られた検出信号を検出器8及び
AD変換器9を介してデータ蓄積用メモリ10の
各画素に対応する番地に格納する(ステツプ2)。
次に、電子計算機6の制御によつて、電子線の照
射されなかつた各画素に対応するメモリ10の各
番地にデータの採取された画素のうち近い画素の
データを転送して格納し、データの補間作業を行
なう(ステツプ3)。この近い画素としては、例
えば符号i×N+1、i×N+2、……、i×N
+(N−1)に対応する画素に対しては、画素i
×Nを選ぶ。次に電子計算機6の制御に基づいて
全画素の表示データをメモリ10から読み出し
て、陰極線管11に供給し、試料5の像を表示す
る(ステツプ4)。次に電子線を照射した画素の
個数を目的値N0と比較し、採取したデータの密
度は充分か否かを判定する(ステツプ5)。もし、
採取データの個数が不充分であれば、NをN/2
に減じた上でステツプ1に戻り、ステツプ1以降
の作業を行なつて、より密にデータを採取して行
く。このより密にデータを採取して行く過程にお
いて、新たに採取されたデータは、メモリ10の
対応する番地に格納する。従つて、ステツプ4に
おいて像を表示する際には、新たに電子線3の照
射によつてデータの採取された画素は、補間デー
タに代えて採取されたデータに基づいて表示され
ることになる。このようにしてループの繰り返し
数の増加と共に、補間データに基づいて表示され
る画素が減少し、実際に検出されたデータに基づ
いて表示される画素が増加し、像の分解能は上昇
して行く。この過程で、像を表示しようとしてい
る領域が興味のない領域であることが像の観察か
ら判明した場合には、その時点でデータの取得を
中止し、例えば他の領域のデータ取得に移行す
る。そうでない場合には、目的とする密度の画素
だけデータを採取したら、データの採取を終了す
る。尚、上述した例において、Nを減じて行く
と、ある画素に対しては重複して電子線を照射す
ることになるが、既に電子線を照射した照射点か
否かを判定し、既に電子線を照射した照射点に対
してはスキツプさせ、電子線を照謝しないことは
勿論である。
In such a configuration, for example, it is possible to scan and display the surface of the sample 5 by dividing it into a maximum of 100 x 100 pixels, and these pixels are associated with symbols as shown in Figure 2. shall be taken as a thing. First, as shown in the flowchart shown in FIG. 3, a number N indicating how many pixels to irradiate with an electron beam during scanning is set. However, N is a power of 2 (step 1). Next, based on this set number N, a control signal is supplied from the electronic computer 6 to the deflection circuit 7 to select every N pixels, that is, pixels i×N (i=0, 1,
2, 3, ...) is irradiated with the electron beam 3 to scan the sample 5. And this electron beam 3
The detection signal obtained with the irradiation is sent to the detector 8 and
The data is stored in the address corresponding to each pixel in the data storage memory 10 via the AD converter 9 (step 2).
Next, under the control of the electronic computer 6, the data of the nearest pixels among the pixels whose data was collected is transferred and stored at each address of the memory 10 corresponding to each pixel that was not irradiated with the electron beam. interpolation work is performed (step 3). These nearby pixels include, for example, codes i×N+1, i×N+2, ..., i×N
For the pixel corresponding to +(N-1), pixel i
Select ×N. Next, under the control of the electronic computer 6, display data for all pixels is read out from the memory 10 and supplied to the cathode ray tube 11 to display an image of the sample 5 (step 4). Next, the number of pixels irradiated with the electron beam is compared with the target value N0 , and it is determined whether the density of the collected data is sufficient (step 5). if,
If the number of collected data is insufficient, set N to N/2.
After reducing the number of data, the process returns to step 1, and the operations after step 1 are performed to collect data more densely. In the process of collecting data more densely, the newly collected data is stored at a corresponding address in the memory 10. Therefore, when displaying an image in step 4, pixels whose data has been newly collected by irradiation with the electron beam 3 will be displayed based on the data collected instead of the interpolated data. . In this way, as the number of loop iterations increases, the number of pixels displayed based on interpolated data decreases, and the number of pixels displayed based on actually detected data increases, increasing the resolution of the image. . During this process, if it is found from observation of the image that the area in which the image is to be displayed is an area of no interest, data acquisition is stopped at that point and data acquisition is moved to, for example, another area. . If this is not the case, data collection is terminated after data has been collected for pixels of the target density. Note that in the above example, if N is reduced, a certain pixel will be irradiated with the electron beam overlappingly, but it is determined whether the irradiation point has already been irradiated with the electron beam or not. Of course, the irradiation point where the beam was irradiated is skipped and the electron beam is not irradiated.

尚、上述した実施例は、本発明の一実施例に過
ぎず、実施に当つては他の多くの態様を取り得
る。
The embodiment described above is only one embodiment of the present invention, and the present invention may be implemented in many other forms.

例えば、上述した実施例においては、最初に概
略的な像を形成するために画素N個おきの照射点
に荷電粒子線を照射するようにしたが、第4図に
おいて斜線で示すように、一行おきに電子線を照
射するようにしても良い。
For example, in the above-described embodiment, the charged particle beam was first irradiated to the irradiation points every N pixels in order to form a schematic image, but as shown by diagonal lines in FIG. The electron beam may be irradiated every other time.

又、第5図に示すように、例えば4×4個の画
素に対して同図において斜線で示すように一点ず
つ照射してデータを採取し、4×4の画素をこの
4×4の領域内の1点の採取データで補間するよ
うにしても良い。
Also, as shown in Figure 5, for example, data is collected by irradiating 4x4 pixels one by one as indicated by diagonal lines in the figure, and the 4x4 pixels are divided into this 4x4 area. Interpolation may be performed using data collected at one point within the range.

更に又、上述した実施例は本発明をX線マイク
ロアナライザーを用いて試料像を表示する場合に
ついて説明したが、オージエ分光装置等を備えた
電子線分析装置等の他の装置を用いて像を表示す
る場合にも、本発明は同様に適用できる。
Furthermore, although the above-mentioned embodiment describes the case where the present invention is used to display a sample image using an The present invention is similarly applicable to the case of display.

上述したように本発明に基づく方法において
は、代替信号によつて表示される部分の割合が自
動的に一画面表示毎に減少してゆく像を観察でき
るため、画面を観察していて、代替信号によつて
表示される部分の割合が走査領域の概略的な把握
や像の表示のために許容できる程度になつたら、
その走査領域でのデータ取得(走査)を中止して
いちはやく次の作業に移れるため、試料の観察ま
たは分析作業の効率を大きく向上させることがで
きる。
As described above, in the method based on the present invention, it is possible to observe an image in which the proportion of the portion displayed by the alternative signal automatically decreases with each screen display. Once the proportion of the area represented by the signal is acceptable for a rough understanding of the scanning area and display of the image,
Since data acquisition (scanning) in that scanning area can be stopped and the next operation can be started immediately, the efficiency of sample observation or analysis operations can be greatly improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明を実施するための装置の一例を
示すための図、第2図は試料面上に考えられた画
素を説明するための図、第3図は本発明を実施す
るための流れを説明するための図、第4図は他の
実施例を説明するための図、第5図は更に他の実
施例を説明するための図である。 1:筐体、2:電子銃、3:電子線、4:偏向
器、5:試料、6:電子計算機、7:偏向回路、
8:波長分散型X線検出器、9:AD変換器、1
0:データ蓄積用メモリ、11:陰極線管。
FIG. 1 is a diagram showing an example of an apparatus for implementing the present invention, FIG. 2 is a diagram for explaining the pixels considered on the sample surface, and FIG. 3 is a diagram showing an example of an apparatus for implementing the present invention. FIG. 4 is a diagram for explaining the flow, FIG. 4 is a diagram for explaining another embodiment, and FIG. 5 is a diagram for explaining still another embodiment. 1: Housing, 2: Electron gun, 3: Electron beam, 4: Deflector, 5: Sample, 6: Computer, 7: Deflection circuit,
8: Wavelength dispersive X-ray detector, 9: AD converter, 1
0: memory for data storage, 11: cathode ray tube.

Claims (1)

【特許請求の範囲】[Claims] 1 二次元的に分布する全画素のうち間引かれた
各画素に対応する照射点に荷電粒子線を照射し、
各照射点に対応する画素は各照射点より得られた
検出信号に基づいて表示すると共に各非照射点の
画素は該各非照射点に近い照射点の検出信号に基
づいて作成された代替信号によつて表示すること
により試料像を二次元的に表示するようにした荷
電粒子線装置等における二次元画像データの表示
方法であつて、前記代替信号によつて表示される
画素が一画面表示する毎に所定量ずつ減少するよ
うに一画面分走査する毎に自動的に前回の走査ま
での照射点と合算した照射点の密度を増加させつ
つ荷電粒子線により試料を走査して画面表示する
ことを特徴とする荷電粒子線装置等における二次
元画像データの表示方法。
1. Irradiate a charged particle beam to the irradiation point corresponding to each thinned out pixel among all the pixels distributed two-dimensionally,
The pixels corresponding to each irradiation point are displayed based on the detection signal obtained from each irradiation point, and the pixels of each non-irradiation point are displayed as alternative signals created based on the detection signal of the irradiation point close to each non-irradiation point. A method for displaying two-dimensional image data in a charged particle beam device, etc., in which a sample image is displayed two-dimensionally by displaying the sample image, wherein the pixels displayed by the alternative signal are displayed on a single screen. The sample is scanned by the charged particle beam and displayed on the screen while automatically increasing the density of the irradiation points, which is the sum of the irradiation points up to the previous scan, each time one screen is scanned so that the density decreases by a predetermined amount each time the sample is scanned. A method for displaying two-dimensional image data in a charged particle beam device, etc., characterized in that:
JP58088681A 1983-05-20 1983-05-20 Display method of 2-d image data in charged particle beam device, etc. Granted JPS59214151A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58088681A JPS59214151A (en) 1983-05-20 1983-05-20 Display method of 2-d image data in charged particle beam device, etc.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58088681A JPS59214151A (en) 1983-05-20 1983-05-20 Display method of 2-d image data in charged particle beam device, etc.

Publications (2)

Publication Number Publication Date
JPS59214151A JPS59214151A (en) 1984-12-04
JPH0524615B2 true JPH0524615B2 (en) 1993-04-08

Family

ID=13949568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58088681A Granted JPS59214151A (en) 1983-05-20 1983-05-20 Display method of 2-d image data in charged particle beam device, etc.

Country Status (1)

Country Link
JP (1) JPS59214151A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0638329B2 (en) * 1986-12-29 1994-05-18 セイコー電子工業株式会社 Focused ion beam scanning method
JP2006138864A (en) * 2001-08-29 2006-06-01 Hitachi Ltd Sample size measuring method and scanning electron microscope
JP2007003535A (en) * 2001-08-29 2007-01-11 Hitachi Ltd Sample size measuring method and scanning electron microscope
JP4268867B2 (en) * 2001-08-29 2009-05-27 株式会社日立製作所 Sample size measuring method and scanning electron microscope
JP2006505093A (en) * 2002-02-04 2006-02-09 アプライド マテリアルズ イスラエル リミテッド System and method for charged particle sensitive resists
JP4748714B2 (en) * 2005-10-28 2011-08-17 エスアイアイ・ナノテクノロジー株式会社 Charged particle beam scanning irradiation method, charged particle beam apparatus, sample observation method, and sample processing method
EP2735866A1 (en) * 2012-11-27 2014-05-28 Fei Company Method of sampling a sample and displaying obtained information

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5236410A (en) * 1975-09-18 1977-03-19 Nippon Telegr & Teleph Corp <Ntt> Facsimile communicion system

Also Published As

Publication number Publication date
JPS59214151A (en) 1984-12-04

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