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JPH0525191B2 - - Google Patents
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JPH0525191B2 - - Google Patents

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Publication number
JPH0525191B2
JPH0525191B2 JP60128484A JP12848485A JPH0525191B2 JP H0525191 B2 JPH0525191 B2 JP H0525191B2 JP 60128484 A JP60128484 A JP 60128484A JP 12848485 A JP12848485 A JP 12848485A JP H0525191 B2 JPH0525191 B2 JP H0525191B2
Authority
JP
Japan
Prior art keywords
thin film
current
ground
film
vortex
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60128484A
Other languages
Japanese (ja)
Other versions
JPS61287180A (en
Inventor
Choshin Sai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP60128484A priority Critical patent/JPS61287180A/en
Publication of JPS61287180A publication Critical patent/JPS61287180A/en
Publication of JPH0525191B2 publication Critical patent/JPH0525191B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/10Junction-based devices
    • H10N60/12Josephson-effect devices

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、接地薄膜内にトラツプ(捕捉)され
た磁束を取り除く手段を有するジヨセフソン集積
回路に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to Josephson integrated circuits having means for removing magnetic flux trapped in a ground film.

(従来の技術及びその問題点) ジヨセフソン集積回路は基板上に超伝導薄膜を
形成してなり、その超伝導薄膜は接地薄膜とこの
接地薄膜上に設けたジヨセフソン回路薄膜とから
なる。このジヨセフソン回路薄膜はジヨセフソン
接合、干渉計ループ、配線等からなつている。
(Prior Art and its Problems) A Josephson integrated circuit is formed by forming a superconducting thin film on a substrate, and the superconducting thin film consists of a ground thin film and a Josephson circuit thin film provided on the ground thin film. This Josephson circuit thin film consists of Josephson junctions, interferometer loops, wiring, etc.

超伝導薄膜によつて作られるジヨセフソン集積
回路の正常動作をさまたげる障害のひとつとし
て、従来から超伝導薄膜における磁束のトラツプ
という現象が問題になつていた。臨界温度TC
もつ完全な超伝導薄膜の温度TがT>TCからT
<TCもまで下がることにより、始め超伝導薄膜
を貫いていた磁場はマイスナー効果によつてすべ
て超伝導薄膜から排除される。しかし、もしこの
超伝導薄膜の超伝導性が多少たりとも不純物、格
子欠陥などによつてそこなわれると、T<TC
状態において磁場は超伝導膜内から完全には排出
されず、トラツプされた磁束として薄膜内に残
る。磁場の十分弱い状態では、トラツプされる磁
束はボルテツクスとよばれる量子化された磁束で
ある(磁束量子Φ0=2×10-7G/cm2)通常の方法
で製作される超伝導薄膜はいずれも完全なもので
はなく、アイ・イー・イー・イー・トランズアク
シヨンズ・オン・マグネテイクス(IEEE
Transactions on Magnetics)Vol.MAG−19,
No.3,1983に述べられているような、磁束量子の
トラツプ現象が起きる事が知られている。実際の
ジヨセフソン集積回路は各ゲート間、ライン間の
磁気的結合を小さくするために接地薄膜上に作ら
れている。しかし、この接地薄膜内に磁束量子が
トラツプされていて(即ち、ボルテツクスが存在
して)、そしてそのトラツプされた磁束が干渉計
ループ又はジヨセフソン接合自身に結合している
とすると、ジヨセフソン集積回路は誤動作を起
す。第4図に上記のような状態を示す。
The phenomenon of magnetic flux traps in superconducting thin films has long been a problem that hinders the normal operation of Josephson integrated circuits made of superconducting thin films. The temperature T of a perfect superconducting thin film with critical temperature T C is from T>T C to T
By lowering T C to <T C , the magnetic field that initially penetrated the superconducting thin film is completely removed from the superconducting thin film by the Meissner effect. However, if the superconductivity of this superconducting thin film is impaired to some extent by impurities, lattice defects, etc., the magnetic field will not be completely exhausted from within the superconducting film in the state of T < T C and will become trapped. The magnetic flux remains within the thin film. When the magnetic field is sufficiently weak, the trapped magnetic flux is a quantized magnetic flux called vortex (magnetic flux quantum Φ 0 = 2×10 -7 G/cm 2 ). None of these are complete, and the IE Transactions on Magnetics (IEEE
Transactions on Magnetics) Vol.MAG−19,
No. 3, 1983, it is known that a magnetic flux quantum trap phenomenon occurs. Actual Josephson integrated circuits are built on a grounded thin film to reduce magnetic coupling between each gate and between lines. However, if flux quanta are trapped in this grounded film (i.e., a vortex exists), and the trapped flux is coupled to the interferometer loop or the Josephson junction itself, then the Josephson integrated circuit Causes malfunction. FIG. 4 shows the above state.

第4図は磁束量子をトラツプして超伝導薄膜の
模式的な断面図である。図中、1は接地薄膜、6
は干渉計ループ、7はジヨセフソン接合、8はボ
ルテツクス(トラツプされた磁束量子)、9は磁
力線を示す。ボルテツクス8の径は約50nm、磁
場が貫ぬく接合の断面は約300nm×5000nm、干
渉計の径は約10000nm、膜厚はすべて約300nmで
ある。第4図のようにトラツプされた磁束が、ジ
ヨセフソン接合7と結合していると、その接合7
のジヨセフソン電流が小さくなるし、またそれが
干渉計ループ6と結合していると干渉計ゲートの
制御特性に変化をもたらす。いずれの場合も磁気
的結合の度合によつてはその磁気的結合がゲート
の誤動作を誘発する原因となる。通常ジヨセフソ
ン集積回路の動作は磁気遮蔽の中の非常に低い磁
場中で行なわれる。この種の磁気遮蔽内の磁場は
約10μGほどであるが、この磁場は例えば10cm×
10cmのチツプ総面積を持つ複数のジヨセフソン集
積回路チツプからなるジヨセフソンコンピユータ
内に約5000個の磁束量子をトラツプさせコンピユ
ータの誤動作の原因となる。実際にはジヨセフソ
ンコンピユータを冷却する時に熱起電力によつて
誘起される電流によつて、上記のようなサイズを
持つコンピユータはさらに多くの(数万個乃至数
十万個の)磁束量子をトラツプするであろうと推
測されていて、このような環境下での正常な演算
動作はほとんど不可能である。
FIG. 4 is a schematic cross-sectional view of a superconducting thin film that traps magnetic flux quanta. In the figure, 1 is a ground thin film, 6
is an interferometer loop, 7 is a Josephson junction, 8 is a vortex (trapped magnetic flux quantum), and 9 is a magnetic field line. The diameter of the vortex 8 is approximately 50 nm, the cross section of the junction through which the magnetic field passes is approximately 300 nm x 5000 nm, the diameter of the interferometer is approximately 10000 nm, and the thickness of all films is approximately 300 nm. If the trapped magnetic flux is coupled to Josephson junction 7 as shown in Figure 4, then the junction 7
The Josephson current becomes smaller, and its coupling with the interferometer loop 6 causes a change in the control characteristics of the interferometer gate. In either case, depending on the degree of magnetic coupling, the magnetic coupling may induce malfunction of the gate. Normally, Josephson integrated circuits operate in very low magnetic fields within a magnetic shield. The magnetic field within this type of magnetic shield is about 10μG;
This traps approximately 5,000 magnetic flux quanta in the Josephson computer, which consists of multiple Josephson integrated circuit chips with a total chip area of 10 cm, causing the computer to malfunction. In reality, a computer with the above size can generate even more magnetic flux quanta (tens to hundreds of thousands) due to the current induced by thermoelectromotive force when cooling the Josephson computer. It is assumed that this will trap the data, and normal operation of the calculation under such an environment is almost impossible.

そこで、本発明の目的は、接地薄膜にトラツプ
された磁束による影響が避けられるジヨセフソン
集積回路を提供する事にある。
SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a Josephson integrated circuit in which the effects of magnetic flux trapped in a grounded thin film can be avoided.

(問題点を解決するための手段) 前述の問題点を解決するために本発明が提供す
るジヨセフソン集積回路は、ボルテツクス駆動電
流を接地薄膜に供給する複数の端子と、前記接地
薄膜における前記ボルテツクス駆動電流の流路を
制御する電流を通す導線膜とが設けてあり、前記
導線膜は前記接地薄膜の上面又は下面に絶縁膜を
介して配設してあり、前記接地薄膜が超伝導状態
にあるときに前記導線膜の近傍の前記接地薄膜を
常伝導状態に転移させるのに足る大きさの前記制
御電流を流せる電流容量が前記導線膜にあり、前
記常伝導状態転移制御電流が前記導線膜に流れて
いるときは、前記端子間の前記接地薄膜に流され
る前記ボルテツクス駆動電流の経路を狭め又は前
記端子と接地端子との間の電流経路を遮る形に前
記導線膜は配置してあることを特徴とする。
(Means for Solving the Problems) In order to solve the above-mentioned problems, the Josephson integrated circuit provided by the present invention includes a plurality of terminals for supplying a vortex drive current to a ground thin film, and a plurality of terminals for supplying a vortex drive current to a ground thin film. A conducting wire film is provided for controlling the current flow path, and the conducting wire film is disposed on the upper surface or the lower surface of the ground thin film with an insulating film interposed therebetween, and the ground thin film is in a superconducting state. In some cases, the conductor film has a current capacity that allows the control current to flow in a magnitude sufficient to transfer the ground thin film in the vicinity of the conductor film to a normal conduction state, and the normal conduction state transition control current is applied to the conductor film. When flowing, the conductor film is arranged in such a way that it narrows the path of the vortex driving current flowing through the ground thin film between the terminals or blocks the current path between the terminal and the ground terminal. Features.

(作用) 次に本発明の作用について述べる。(effect) Next, the operation of the present invention will be described.

本発明において、接地薄膜にトラツプされた磁
束の影響が避けられるように初期化するには、ま
ず接地薄膜以外の超伝導薄膜、即ちジヨセフソン
回路薄膜が常伝導状態になるようにする。こうす
ることにより接地薄膜中にトラツプされた磁束ボ
ルテツクスは、ジヨセフソン回路薄膜の影響を受
けず超伝導状態にある接地薄膜中を移動出来る。
上記のような接地薄膜を超伝導状態に保ち同時に
それ以外の超伝導薄膜(ジヨセフソン回路薄膜)
を常伝導状態にする方式として、たとえば接地薄
膜以外の超伝導薄膜にその薄膜の超伝導臨界電流
以上の電流を注入する方式、または接地薄膜以外
の超伝導薄膜の材料としてその超伝導臨界温度
TCJが接地薄膜の材料の超伝導臨界温度TCGより
も低い材料を選びTCJ<T<TCGという温度Tに
環境温度を設定する方式などがある。この状態
で、接地薄膜内に電流密度Jを持つ電流(ボルテ
ツクス駆動電流)を流すとローレンツ力F=J×
Φ0がボルテツクスに対して作用する(Φ0は磁束
量子であり、F,J,Φ0はベクトル量である)。
このローレンツ力によつてボルテツクスは接地薄
膜内をボルテツクス駆動電流に垂直な方向に向つ
て駆動される。トラツプされた磁束の方向は上下
二種類あるが、この時これらは互いに正反対の方
向に駆動される。そこで、ボルテツクスは接地薄
膜の辺部に集中し、そこで停止する。この過程で
注意するべきことは超伝導薄膜に流される電流に
よつて接地薄膜表面に誘起される磁界Hは決して
接地薄膜を構成している材料の臨界磁場HC(もし
材料が第2種超伝導ならば下部臨界磁場HC1)を
超えてはならないということである。上記の臨界
磁界を超えると新しいボルテツクスが接地薄膜内
に生じてしまう。したがつて電流密度Jには上限
JMaxが存在する。一方接地薄膜内に各種の格子欠
陥が存在すると、その格子欠陥に捕獲されたボル
テツクスにはピン留め力が働く。ピン留め力はピ
ン留めセンターとなる格子欠陥部からボルテツク
スが脱出するのを防ぐ力である。ピン留め力FP
の大きさはその薄膜の性質によつて決まり、一般
的には単結晶に近く、不純物濃度が低い膜ほどピ
ン留め力は弱い。ローレンツ力Fでボルテツクス
を動かす場合F>FPでなくてはならない。上記
のような過程を経た後に常伝導状態に設定してあ
つたジヨセフソン回路薄膜を、電流、温度などの
制御により再度超伝導状態にもどす。そうすると
接地薄膜にトラツプされた磁束の影響のないジヨ
セフソン集積回路が得られる。更に加えて、最後
の過程でジヨセフソン回路薄膜が超伝導状態に移
行する時には、外部磁界は以上説明したように接
地薄膜の周辺部に既に集中しているので、ジヨセ
フソン回路薄膜近傍の磁場は極めて弱くジヨセフ
ソン回路薄膜自体への磁束のトラツプも非常に起
りにくい。
In the present invention, in order to initialize so as to avoid the influence of the magnetic flux trapped in the ground thin film, first the superconducting thin film other than the ground thin film, that is, the Josephson circuit thin film, is brought into a normal conduction state. By doing this, the magnetic flux vortices trapped in the ground thin film can move through the ground thin film in a superconducting state without being affected by the Josephson circuit thin film.
Keeping the grounded thin film mentioned above in a superconducting state and at the same time keeping other superconducting thin films (Josefson circuit thin film)
For example, a method of injecting a current higher than the superconducting critical current of the thin film into a superconducting thin film other than the grounded thin film, or a method of making the material of the superconducting thin film other than the grounded thin film into a normal conduction state, or
There is a method of selecting a material whose T CJ is lower than the superconducting critical temperature T CG of the grounding thin film material and setting the environmental temperature at a temperature T such that T CJ < T < T CG . In this state, when a current with a current density J (vortex drive current) is passed through the ground thin film, the Lorentz force F=J×
Φ 0 acts on the vortex (Φ 0 is a flux quantum and F, J, Φ 0 are vector quantities).
This Lorentz force drives the vortex within the ground thin film in a direction perpendicular to the vortex drive current. There are two directions of the trapped magnetic flux, upper and lower, and these are driven in opposite directions. The vortex then concentrates on the edges of the ground membrane and stops there. What should be noted in this process is that the magnetic field H induced on the surface of the ground thin film by the current flowing through the superconducting thin film never exceeds the critical magnetic field H C of the material composing the ground thin film (if the material is In the case of conduction, this means that the lower critical magnetic field H C1 ) must not be exceeded. Above the critical magnetic field, a new vortex is created in the ground film. Therefore, there is an upper limit to the current density J.
J Max exists. On the other hand, if various lattice defects exist in the ground thin film, a pinning force acts on the vortices captured by the lattice defects. The pinning force is the force that prevents the vortices from escaping from the lattice defect that serves as the pinning center. Pinning force F P
The size of the thin film is determined by the properties of the thin film, and in general, the closer the film is to a single crystal and the lower the impurity concentration, the weaker the pinning force. When moving a vortex with Lorentz force F, F > F P must be satisfied. After going through the above process, the Josephson circuit thin film, which had been set to a normal conductive state, is returned to a superconducting state by controlling current, temperature, etc. This results in a Josephson integrated circuit that is free from the effects of magnetic flux trapped in the grounded film. In addition, when the Josephson circuit thin film transitions to a superconducting state in the final process, the external magnetic field is already concentrated around the ground thin film as explained above, so the magnetic field near the Josephson circuit thin film is extremely weak. It is also very unlikely that the magnetic flux will be trapped in the Josephson circuit thin film itself.

本発明のジヨセフソン集積回路では、接地薄膜
におけるボルテツクス駆動電流を制御する電流を
通す導線膜が接地薄膜の上面又は下面に絶縁膜を
介して配設してある。この導線膜に電流を流す事
により、導線膜近辺に大きな磁場を作る事が出
来、この磁場により導線膜と局所的に結合してい
る接地薄膜の超伝導状態を破壊する事が出来る。
すなわち、導線膜近辺の接地薄膜常伝導状態にす
る事が出来、その時にボルテツクス駆動電流を接
地薄膜内に流すと、電流は常伝導状態にある接地
薄膜の部分を避けて流れる。つまり、導線膜の配
置を工夫する事により、ボルテツクス駆動電流の
流れを自由に制御出来る。そこで、本発明では、
ボルテツクス駆動電流供給端子間の接地薄膜に流
されるボルテツクス駆動電流の経路を狭め、又は
そのボルテツクス駆動電流供給端子と接地端子
(接地薄膜に設けてあり、接地薄膜をチツプ搭載
基板の接地面に接続するのに用いる端子)との間
の電流経路を遮る形に導線膜が配置してある。こ
のような形に導線膜を配置することより、導線膜
に制御電流を流して、ボルテツクス駆動電流の密
度を大きくし、ひいてはボルテツクスに作用する
ローレンツ力を大きくすることができる。
In the Josephson integrated circuit of the present invention, a conductor film through which a current for controlling the vortex drive current in the ground thin film passes is disposed on the upper or lower surface of the ground thin film via an insulating film. By passing a current through this conductive wire film, a large magnetic field can be created near the conductive wire film, and this magnetic field can destroy the superconducting state of the ground thin film that is locally coupled to the conductive wire film.
That is, the ground thin film near the conducting wire membrane can be brought into a normally conducting state, and when a vortex drive current is passed through the ground thin film at that time, the current flows avoiding the portion of the ground thin film that is in the normally conducting state. In other words, by carefully arranging the conductor film, the flow of the vortex drive current can be freely controlled. Therefore, in the present invention,
Narrow the path of the vortex drive current flowing through the ground thin film between the vortex drive current supply terminals, or connect the vortex drive current supply terminal and the ground terminal (provided on the ground thin film, and connect the ground thin film to the ground plane of the chip mounting board). A conductor film is placed in such a way as to block the current path between the terminals used for the By arranging the conductive wire film in this manner, it is possible to flow a control current through the conductive wire film, increase the density of the vortex drive current, and thereby increase the Lorentz force acting on the vortex.

(実施例) 本発明の第1の実施例を第1図に示す。第1図
中1は本実施例のジヨセフソン集積回路のチツプ
における接地薄膜、2はボルテツクス駆動電流制
御線(前述の導線膜に相当)、3はボルテツクス
駆動電流供給端子、4は電源である。第1図はジ
ヨセフソン集積回路チツプの平面図である。本図
にはジヨセフソン回路薄膜は示していないが、こ
れは薄膜1の上部に作られている。ボルテツクス
駆動電流制御線2に電流INを流し、制御線2に磁
気的に結合されている接地薄膜1の部分を常伝導
状態にし、他の接地薄膜1の部分を超伝導状態に
保つ事が出来る。このような状態において、前に
作用の欄で述べたように接地薄膜1以外のジヨセ
フソン回路を常伝導状態にしてから、ボルテツク
ス駆動電流供給端子3から接地薄膜1内に直流電
流を注入すると、ボルテツクスはローレンツ力F
によつて接地薄膜1内を移動する。前にも述べた
ようにF=J×Φ0>FPという条件を満たさなけ
ればボルテツクスはピン留め力FPによつて移動
出来ない。ピン留め力の大きさはその薄膜の質に
よつて決まるが、最悪の場合J=1×106A/cm2
というような電流密度でなくては上記J×Φ0
FPという条件は満たせない。この電流密度を例
えば単純に幅50nm、厚さ300nmの接地薄膜に流
すとすると、全電流は15Aという大電流になる。
このような大電流を超伝導システム内に流す事
は、システム内の常伝導部分の発熱をうながし、
超伝導状態の破壊をも生じる可能性がある。また
外部からこのような大電流をシステム内に導入す
るための大口径の電線によるシステム内への熱の
流入も大きな問題である。本実施例によれば、ボ
ルテツクス駆動電流注入時には接地薄膜1は制御
線2によつて作られた二重の櫛状の常伝導状態の
隔壁により分割され、電流供給端子3から注入さ
れた電流は第1図中矢印で示されているように接
地薄膜1中を蛇行して流れる。一定の電流密度で
電流が第1図矢印のように流れる場合と、常伝導
状態の隔壁がない場合とを比べると、前者の電流
値は後者のそれ数分の一ですむ。第1図を例にと
ると、ボルテツクス駆動電流は隔壁がない場合の
5分の1ですむ。このように本実施例によれば、
少量のボルテツクス駆動電流によりボルテツクス
を移動させ、これを接地薄膜辺部およびボルテツ
クス駆動電流制御線2の周辺に集中させることが
出来る。櫛の目の数は本実施例では片側2本であ
るが、これは本実施例の本質ではなく、本数が多
くなればなるほどボルテツクス駆動電流は少なく
て足りる。また本実施例については二重の櫛状の
構造を持つたボルテツクス駆動電流制御線を例に
して説明をしたが、この2重の櫛状構造も本実施
例の本質ではなく、例えば螺旋状のボルテツクス
駆動電流制御線を配置し、ボルテツクス駆動電流
を螺旋状に流しても小さな電流で全トラツプ接地
薄膜上のボルテツクスを動かす事が出来る。本実
施例の本質は、接地薄膜を接地薄膜に磁気的に結
合する制御線で分割する事によつて駆動電流Jを
高め、出来るだけ小さなボルテツクス駆動電流で
ボルテツクスを動かすという事である。ボルテツ
クス駆動電流を流した後、制御電流INを零にする
と、実施例の初期化が完成する。
(Example) A first example of the present invention is shown in FIG. In FIG. 1, 1 is a grounding thin film in the Josephson integrated circuit chip of this embodiment, 2 is a vortex drive current control line (corresponding to the above-mentioned conducting wire film), 3 is a vortex drive current supply terminal, and 4 is a power supply. FIG. 1 is a plan view of a Josephson integrated circuit chip. Although the Josephson circuit thin film is not shown in this figure, it is fabricated on top of the thin film 1. By passing a current I N through the vortex drive current control line 2, the part of the ground thin film 1 that is magnetically coupled to the control line 2 is made to be in a normal conduction state, and the other part of the ground thin film 1 is kept in a superconducting state. I can do it. In such a state, as described in the operation section, if the Josephson circuit other than the ground thin film 1 is brought into the normal conduction state, and then a DC current is injected into the ground thin film 1 from the vortex drive current supply terminal 3, the vortex is the Lorentz force F
It moves within the ground thin film 1 by. As mentioned before, the vortex cannot be moved by the pinning force F P unless the condition F=J×Φ 0 >F P is satisfied. The magnitude of the pinning force is determined by the quality of the thin film, but in the worst case J = 1 × 10 6 A/cm 2
Unless the current density is such that the above J×Φ 0 >
The condition F P cannot be satisfied. For example, if this current density is simply passed through a grounded thin film with a width of 50 nm and a thickness of 300 nm, the total current will be a large current of 15 A.
Flowing such a large current into a superconducting system increases heat generation in the normal conducting parts of the system.
Destruction of the superconducting state may also occur. Another major problem is the inflow of heat into the system due to large diameter electric wires used to introduce such a large current into the system from the outside. According to this embodiment, when a vortex drive current is injected, the ground thin film 1 is divided by the double comb-shaped normally conducting partition wall created by the control line 2, and the current injected from the current supply terminal 3 is It flows in a meandering manner through the ground thin film 1 as indicated by the arrows in FIG. Comparing the case where the current flows at a constant current density as shown by the arrow in Figure 1 and the case where there is no partition wall in the normal conduction state, the current value in the former case is only a fraction of that in the latter case. Taking FIG. 1 as an example, the vortex drive current can be reduced to one-fifth of that without the partition wall. As described above, according to this embodiment,
A small amount of vortex drive current can move the vortex and concentrate it around the ground thin film edge and the vortex drive current control line 2. Although the number of combs is two on each side in this embodiment, this is not the essence of this embodiment, and the greater the number, the less vortex drive current is required. Furthermore, although this embodiment has been explained using a vortex drive current control line having a double comb-like structure as an example, this double comb-like structure is not the essence of this embodiment. Even if a vortex drive current control line is arranged and the vortex drive current is passed in a spiral pattern, the vortex on the entire trap grounding thin film can be moved with a small current. The essence of this embodiment is to increase the drive current J by dividing the ground thin film with a control line that is magnetically coupled to the ground thin film, and to move the vortex with as small a vortex drive current as possible. After the vortex drive current is applied, the control current I N is made zero to complete the initialization of the embodiment.

本発明の第2の実施例を第2図に示す。第2図
中1〜4は第1図と同様のものであり、5は接地
端子である。実際のジヨセフソン集積回路では第
2図のように複数個の接地端子5を用いて、チツ
プ上の接地薄膜1とカード(チツプ搭載基板)上
の接地面とを電気的に接続している。第2図中接
地端子5はカード上の接地面に接地されている。
この接地端子5は理想的には超伝導である事が望
ましい。このような超伝導の接地端子が存在する
と、ボルテツクス駆動電流供給端子3からチツプ
上の接地薄膜1に電流を供給したときに、その電
流は接地端子を経由してカード上の超伝導接地面
にも多量に流れてしまう。つまりボルテツクスを
駆動するため所要の電流密度Jをツプ上の接地薄
膜1に流すためには、カード上に流れてしまう分
だけ余計に電流を流さなければならない。超伝導
状態を利用した回路システムに余計の電流を流す
という事は、第1の実施例においても説明したよ
うに望ましくない事である。本実施例におけるよ
うに、ボルテツクス駆動電流制御線2に電流を流
して接地端子5とボルテツクス駆動電流供給端子
3とを分離することにより、上記のようなカード
上への電流を漏れを防ぐ事が出来る。つまり第1
の実施例のように、制御線2に電流を流しその近
辺の接地薄膜を常伝導状態した後にボルテツクス
駆動電流を流すと、その電流は第2図からわかる
ようにチツプ上の接地薄膜1中に限られて流れ
る。また本実施例の本質は、ボルテツクス駆動電
流制御線によつて接地端子とボルテツクス駆動電
流供給端子とを電気的に分離することにあり、そ
の分離の方式、各端子の数などは第2図のような
構成にとらわれるものではない。
A second embodiment of the invention is shown in FIG. In FIG. 2, 1 to 4 are the same as those in FIG. 1, and 5 is a ground terminal. In an actual Josephson integrated circuit, as shown in FIG. 2, a plurality of ground terminals 5 are used to electrically connect the ground thin film 1 on the chip to the ground plane on the card (chip mounting board). In FIG. 2, the ground terminal 5 is grounded to the ground plane on the card.
Ideally, this ground terminal 5 should be superconducting. If such a superconducting ground terminal exists, when a current is supplied from the vortex drive current supply terminal 3 to the ground thin film 1 on the chip, the current will pass through the ground terminal to the superconducting ground plane on the card. Also flows in large quantities. In other words, in order to cause the required current density J to flow through the ground thin film 1 on the pin in order to drive the vortex, an extra current must be applied to the card. As explained in the first embodiment, it is undesirable to cause an extra current to flow through a circuit system that utilizes a superconducting state. As in this embodiment, by passing a current through the vortex drive current control line 2 to separate the ground terminal 5 and the vortex drive current supply terminal 3, it is possible to prevent the current from leaking onto the card as described above. I can do it. In other words, the first
As in the embodiment shown in FIG. 2, when a current is applied to the control line 2 to bring the ground thin film in the vicinity into a normal conduction state, and then a vortex drive current is applied, the current flows into the ground thin film 1 on the chip, as can be seen from FIG. Limited flow. The essence of this embodiment is to electrically separate the ground terminal and the vortex drive current supply terminal by the vortex drive current control line, and the method of separation, the number of each terminal, etc. are shown in FIG. It is not limited to such a configuration.

本発明の第3の実施例を第3図に示す。第3図
中の各構成要素は第1図、第2図のそれと同様で
ある。本実施例は第1の実施例と第2の実施例と
を併合したものであり、このふたつの実施例の特
徴とすべて持ち合わせている。すなわち比較的少
量のボルテツクス駆動電流でボルテツクスを移動
させる事が出来、同時にカード側にもこの電流が
リークしないような構造を持つている。本実施例
を個別に第3図のように示したのは、本発明の第
1及び第2の実施例は同時に実現出来るものであ
り相互排除的なものではない事を示すためであ
る。
A third embodiment of the invention is shown in FIG. Each component in FIG. 3 is the same as that in FIGS. 1 and 2. This embodiment is a combination of the first embodiment and the second embodiment, and has all the features of these two embodiments. In other words, it is possible to move the vortex with a relatively small amount of vortex drive current, and at the same time, it has a structure that prevents this current from leaking to the card side. The reason why this embodiment is shown individually as shown in FIG. 3 is to show that the first and second embodiments of the present invention can be realized simultaneously and are not mutually exclusive.

なお、第1、第2及び第3の実施例を変形し
て、ボルテツクス駆動電流制御線2を接地薄膜1
の下部に埋めこむと、制御線2が表面にあらわれ
ない、一様な超伝導接地薄膜が得られ、ジヨセフ
ソン回路薄膜が容易にその上に配置出来る。
Note that the first, second and third embodiments are modified so that the vortex drive current control line 2 is connected to the ground thin film 1.
By embedding it in the lower part of the superconductor, a uniform superconducting ground thin film is obtained in which the control line 2 is not exposed on the surface, and the Josephson circuit thin film can be easily placed on top of the superconducting ground thin film.

(発明の効果) 本発明により、小さなボルテツクス駆動電流に
よつて、実装されていないジヨセフソン集積回路
チツプ又はカード上に実装されたジヨセフソン集
積回路チツプの接地薄膜にトラツプした磁束を駆
動する事が出来る。従つて、本発明によれば、接
地薄膜にトラツプされた磁束による影響が避けら
れるジヨセフソン集積回路が提供できる。
(Effects of the Invention) According to the present invention, magnetic flux trapped in the ground thin film of an unmounted Josephson integrated circuit chip or a Josephson integrated circuit chip mounted on a card can be driven by a small vortex drive current. Therefore, according to the present invention, a Josephson integrated circuit can be provided in which the effects of magnetic flux trapped in the ground thin film can be avoided.

【図面の簡単な説明】[Brief explanation of drawings]

第1図、第2図及び第3図は本発明の第1、第
2及び第3の実施例をそれぞれ示す模式的な平面
図、第4図は接地薄膜に磁束量子がトラツプされ
ている状態にあるジヨセフソン集積回路の超伝導
薄膜を示す模式的な断面図である。 1…チツプ上の接地薄膜、2…ボルテツクス駆
動電流制御線、3…ボルテツクス駆動電流供給端
子、4…電源、5…接地端子、6…干渉計ルー
プ、7…ジヨセフソン接合、8…ボルテツクス
(トラツプされた磁束)、9…磁力線。
1, 2, and 3 are schematic plan views showing the first, second, and third embodiments of the present invention, respectively, and FIG. 4 shows a state in which magnetic flux quanta are trapped in the ground thin film. 1 is a schematic cross-sectional view showing a superconducting thin film of a Josephson integrated circuit in FIG. DESCRIPTION OF SYMBOLS 1...Ground thin film on chip, 2...Vortex drive current control line, 3...Vortex drive current supply terminal, 4...Power source, 5...Ground terminal, 6...Interferometer loop, 7...Josephson junction, 8...Vortex (trapped) (magnetic flux), 9... Lines of magnetic force.

Claims (1)

【特許請求の範囲】[Claims] 1 ボルテツクス駆動電流を接地薄膜に供給する
複数の端子と、前記接地薄膜における前記ボルテ
ツクス駆動電流の流路を制御する電流を通す導線
膜とが設けてあり、前記導線膜は前記接地薄膜の
上面又は下面に絶縁膜を介して配設してあり、前
記接地薄膜が超伝導状態にあるときに前記導線膜
の近傍の前記接地薄膜を常伝導状態に転移させる
のに足る大きさの前記制御電流を流せる電流容量
が前記導線膜にあり、前記常伝導状態転移制御電
流が前記導線膜に流れているときは、前記端子間
の前記接地薄膜に流される前記ボルテツクス駆動
電流の経路を狭め又は前記端子と接地端子との間
の電流経路を遮る形に前記導線膜は配置してある
ことを特徴とするジヨセフソン集積回路。
1 A plurality of terminals for supplying a vortex drive current to a ground thin film, and a conductor film for passing a current that controls the flow path of the vortex drive current in the ground thin film are provided, and the conductor film is arranged on the upper surface of the ground thin film or The control current is disposed on the lower surface with an insulating film interposed therebetween, and has a magnitude sufficient to transfer the ground thin film in the vicinity of the conducting wire film to a normal conductive state when the ground thin film is in a superconducting state. When the conducting wire film has a current capacity that allows the current to flow, and the normal conduction state transition control current is flowing through the conducting wire film, the path of the vortex drive current flowing through the ground thin film between the terminals is narrowed or A Josephson integrated circuit characterized in that the conductor film is arranged in such a way that it blocks a current path between it and a ground terminal.
JP60128484A 1985-06-13 1985-06-13 Josephson integrated circuit Granted JPS61287180A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60128484A JPS61287180A (en) 1985-06-13 1985-06-13 Josephson integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60128484A JPS61287180A (en) 1985-06-13 1985-06-13 Josephson integrated circuit

Publications (2)

Publication Number Publication Date
JPS61287180A JPS61287180A (en) 1986-12-17
JPH0525191B2 true JPH0525191B2 (en) 1993-04-12

Family

ID=14985884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60128484A Granted JPS61287180A (en) 1985-06-13 1985-06-13 Josephson integrated circuit

Country Status (1)

Country Link
JP (1) JPS61287180A (en)

Also Published As

Publication number Publication date
JPS61287180A (en) 1986-12-17

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