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JPH0528914B2 - - Google Patents
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JPH0528914B2 - - Google Patents

Info

Publication number
JPH0528914B2
JPH0528914B2 JP16981586A JP16981586A JPH0528914B2 JP H0528914 B2 JPH0528914 B2 JP H0528914B2 JP 16981586 A JP16981586 A JP 16981586A JP 16981586 A JP16981586 A JP 16981586A JP H0528914 B2 JPH0528914 B2 JP H0528914B2
Authority
JP
Japan
Prior art keywords
light
cover case
receiving element
semiconductor sensor
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP16981586A
Other languages
Japanese (ja)
Other versions
JPS6327071A (en
Inventor
Tsuguo Uchino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP61169815A priority Critical patent/JPS6327071A/en
Priority to KR1019870007890A priority patent/KR900007051B1/en
Publication of JPS6327071A publication Critical patent/JPS6327071A/en
Publication of JPH0528914B2 publication Critical patent/JPH0528914B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Description

【発明の詳細な説明】 〔発明の目的〕 (産業上の利用分野) 本発明は、発光素子および受光素子を用いた半
導体センサーに関するものであり、特に塵埃の多
い悪環境のもとにおいて使用可能なセンサーに関
するものである。
[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to a semiconductor sensor using a light emitting element and a light receiving element, and can be used particularly in a bad environment with a lot of dust. It is about a sensor.

(従来の技術) 半導体センサーとは、検知空間内において被検
知物の有無を、発光素子と受光素子とで検出する
ものである。
(Prior Art) A semiconductor sensor detects the presence or absence of an object to be detected in a detection space using a light emitting element and a light receiving element.

従来この半導体センサーにおいては、外光によ
る誤動作等を防止し検出精度を上げるため、発光
素子および受光素子をそれぞれ不透明な樹脂で覆
い、この樹脂に小さなスリツト(窓)を設け、こ
のスリツトを介して光の入出力を行うものがあ
る。
Conventionally, in this semiconductor sensor, in order to prevent malfunctions caused by external light and improve detection accuracy, the light emitting element and the light receiving element are each covered with opaque resin, and a small slit (window) is provided in this resin. There is something that inputs and outputs light.

しかしながら、このようなセンサーは、塵埃の
多い悪環境においては、スリツトに塵埃がたまり
やすく、使用困難であつた。
However, such a sensor is difficult to use in a dusty environment because dust tends to accumulate in the slit.

このため、防塵カバーケースでこのセンサーを
覆つて使用することが考えられた。
For this reason, we considered using a dustproof cover case to cover this sensor.

(発明が解決しようとする問題点) ところが、このカバーケースを用いたところ、
発光素子からの光が受光素子へ入力しない光遮断
状態においても受光素子に出力電流が発生し誤動
作することがあつた。また、受光素子としてフオ
トトランジスタを用いた場合もコレクタ電流(出
力電流)が発生しS/N比が低下してしまう。
(Problem to be solved by the invention) However, when this cover case was used,
Even in a light-blocking state in which light from the light-emitting element does not enter the light-receiving element, an output current is generated in the light-receiving element, resulting in malfunction. Further, even when a phototransistor is used as a light receiving element, a collector current (output current) is generated and the S/N ratio is lowered.

これは、カバーケース自体がライトパス(光通
路)となり、受光素子に光を導くためであつた。
This is because the cover case itself becomes a light path and guides light to the light receiving element.

本発明は塵埃の多い悪環境にも十分使用可能な
半導体センサーを供給することを目的とするもの
であり、さらに、通常のセンサー本体を加工する
ことなく、安価にしかも容易に、光遮断状態にお
ける漏れ出力電流の小さい半導体センサーを供給
することを目的とするものである。
The purpose of the present invention is to provide a semiconductor sensor that can be used satisfactorily even in a dusty and harsh environment.Furthermore, it is possible to provide a semiconductor sensor that can be easily used in a light-blocking state at low cost and without the need for processing a normal sensor body. The purpose is to provide a semiconductor sensor with low leakage output current.

〔発明の構成〕[Structure of the invention]

(問題を解決するための手段) 半導体センサーに塵埃用カバーケースを用いた
場合、このカバーケースにライトパス(光通路)
が必然的に形成されてしまう。
(Means to solve the problem) When a dust cover case is used for a semiconductor sensor, a light path (light path) is installed in this cover case.
is inevitably formed.

これに対し、ライトパスを開口等により完全に
遮断する場合は、この遮断部より塵埃が侵入し、
塵埃がスリツトまで達し光伝達特性が低下してし
まう。
On the other hand, if the light path is completely blocked by an opening etc., dust may enter through this blocking part.
Dust reaches the slit and deteriorates the light transmission characteristics.

本発明は、カバーケースのライトパスとなる部
分を分断することなく、側面が垂直構造の溝を形
成することにより反射散乱壁を構成し、このライ
トパスを通り受光素子へ到達する光を減少させる
ものである。
The present invention forms a reflective scattering wall by forming a groove with a vertical side surface without dividing the part of the cover case that becomes the light path, and reduces the light that passes through this light path and reaches the light receiving element. It is something.

(作用) 本発明の半導体センサーは、カバーケースのラ
イトパスとなる部分に側面が垂直構造の溝を形成
してある。
(Function) In the semiconductor sensor of the present invention, a groove with a vertical side surface is formed in a portion of the cover case that serves as a light path.

この溝の周壁が、ライトパスを通る光の光反射
散乱壁を構成する。
The peripheral wall of this groove constitutes a light reflection and scattering wall for light passing through the light path.

従つて、発光素子からライトパスを通つてきた
光は、この反射散乱壁で反射散乱され減少し、受
光素子へ入力する光は極めて少なくなる。
Therefore, the light that has passed through the light path from the light emitting element is reflected and scattered by the reflection and scattering wall and is reduced, so that the amount of light that enters the light receiving element is extremely small.

(実施例) 本発明の第1実施例装置を図を用いて説明す
る。
(Example) A first example apparatus of the present invention will be described with reference to the drawings.

第1図に本実施例装置のセンサー本体およびカ
バーケースの斜視図を示す。
FIG. 1 shows a perspective view of the sensor body and cover case of the device of this embodiment.

検知空間Xを構成するよう、所定間隔をおいて
配置された不透明発光素子収納部1および不透明
受光素子収納部2には、図示しない発光素子およ
び受光素子が収納されている。そして、この発光
素子により放射される光が受光素子へ入射される
よう各収納部1,2の対向する面には夫々スリツ
ト(窓)3が形成されている。
A light emitting element and a light receiving element (not shown) are housed in an opaque light emitting element housing part 1 and an opaque light receiving element housing part 2 which are arranged at a predetermined interval so as to constitute the detection space X. A slit (window) 3 is formed in each of the opposing surfaces of each housing section 1 and 2 so that the light emitted by the light emitting element is incident on the light receiving element.

なお収納部1,2の下部は連結部4により連結
され、センサー本体は収納部1,2および連結部
4で略U字形状を成している。また、各収納部
1,2の底面からは、発光素子および受光素子の
リード5,5が突出している。
Note that the lower portions of the storage sections 1 and 2 are connected by a connection section 4, and the sensor body has a substantially U-shape with the storage sections 1 and 2 and the connection section 4. Furthermore, leads 5, 5 of a light emitting element and a light receiving element protrude from the bottom surface of each storage part 1, 2.

透明な樹脂からなるカバーケース6はこの略U
字形状の本体の上面と側面を覆い、かつ検知空間
Xを構成するよう、本体と相似な略U字形状を成
している。
The cover case 6 made of transparent resin has this abbreviation U.
It has a substantially U-shape similar to the main body so as to cover the top and side surfaces of the main body and form a detection space X.

そして、このカバーケース6の、連結部4を覆
う部分には、第2図に断面図で示すように、外側
表面の中央に1つ、内側表面の両角に1つずつ、
側面が垂直構造の溝Mが形成されている。なお図
中7および8は発光素子および受光素子を示して
いる。
The part of the cover case 6 that covers the connecting part 4 has one in the center of the outer surface and one in each corner of the inner surface, as shown in the cross-sectional view in FIG.
A groove M whose side surfaces are vertical is formed. Note that 7 and 8 in the figure indicate a light emitting element and a light receiving element.

次に本実施例装置の動作について第2図を用い
て説明する。
Next, the operation of the apparatus of this embodiment will be explained using FIG. 2.

まず、発光素子7に電圧を印加する。電圧の印
加された素子7は発光し、この光は発光素子収納
部1のスリツトを通り、空間Xへ照射される。
First, a voltage is applied to the light emitting element 7. The element 7 to which the voltage is applied emits light, and this light passes through the slit in the light emitting element storage section 1 and is irradiated into the space X.

そして、空間Xに被検知物体が無い場合、この
光は受光素子収納部2のスリツトを通り、受光素
子8へ入射される。
If there is no object to be detected in the space X, this light passes through the slit in the light receiving element storage section 2 and enters the light receiving element 8.

また、空間Xに被検知物体が有る場合、この光
は被検知物体により遮断され、受光素子8へ入射
されない。
Further, if there is a detected object in the space X, this light is blocked by the detected object and does not enter the light receiving element 8.

以上のようにして被検知物体の有無が検知され
る。
As described above, the presence or absence of the object to be detected is detected.

しかしながら、空間Xに被検知物体が存在する
光遮断部状態の場合においても、発光素子7から
の光は、カバーケース自体をライトパス(光通
路)として受光素子8へ伝わる。
However, even in the case of the light blocking state where a detected object exists in the space X, the light from the light emitting element 7 is transmitted to the light receiving element 8 using the cover case itself as a light path (light path).

しかし、本実施例装置においては、このカバー
ケース6を伝わる光は3つの側面が垂直構造の溝
M,M,Mの周壁で反射散乱される。
However, in the device of this embodiment, the light transmitted through the cover case 6 is reflected and scattered by the peripheral walls of the grooves M, M, M, which have three vertical sides.

このため、受光素子8へ到達する光は著しく減
少する。
Therefore, the amount of light reaching the light receiving element 8 is significantly reduced.

なお、受光素子としてフオトトランジスタを用
い、光遮断状態でのコレクタ電流(出力電流)を
測定したところ、溝の無いカバーケースを用いた
ものに比べ、このコレクタ電流は40%〜50%減少
した。
When a phototransistor was used as a light receiving element and the collector current (output current) was measured in a light-blocking state, this collector current was reduced by 40% to 50% compared to a case using a cover case without grooves.

また、側面が垂直構造の溝の表面に粗面加工を
施すと、光の散乱効果が上り、このコレクタ電流
は更に数%減少する。
Further, when the surface of a groove with a vertical structure is roughened, the light scattering effect increases, and this collector current further decreases by several percent.

本発明は、上記1実施例に限定されるものでは
なく、例えば、カバーケース6に形成される側面
が垂直構造の溝は、もつと複数あつてもよい。
The present invention is not limited to the one embodiment described above; for example, the cover case 6 may have a plurality of grooves each having a vertical side surface.

また、発光素子として赤外発光LEDを用いる
場合は、可視光遮断樹脂を用いてもよい。
Moreover, when using an infrared light emitting LED as a light emitting element, a visible light blocking resin may be used.

また、カバーケースに、カーボン含有のポリカ
ーポネートを用いた場合、塵埃が付着しにくくな
る。このため、長時間使用した場合等発生する、
「カバーケースへの塵埃付着による光伝達特性の
低下」という問題が防止できる。
Further, when carbon-containing polycarbonate is used for the cover case, dust is less likely to adhere to the cover case. For this reason, this may occur when used for a long time.
The problem of "deterioration of light transmission characteristics due to dust adhesion to the cover case" can be prevented.

なお、通常の樹脂を用いる場合においても、カ
バーケース表面に静電防止加工を施すことによ
り、同様に光伝達特性の低下が防止できる。
Note that even when a normal resin is used, deterioration of light transmission characteristics can be similarly prevented by applying antistatic treatment to the surface of the cover case.

(効果) 本発明の半導体センサーによると、カバーケー
スを通じて受光素子へ到達する光を、簡単な構成
で著しく軽減できる。従つて、塵埃の多い悪環境
の元でも誤動作すること無く使用できるという効
果がある。
(Effects) According to the semiconductor sensor of the present invention, light reaching the light receiving element through the cover case can be significantly reduced with a simple configuration. Therefore, there is an advantage that it can be used without malfunctioning even in a bad environment with a lot of dust.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例装置の斜視図、第2
図は一実施例装置の断面図である。 1…発光素子収納部、2…受光素子収納部、3
…スリツト、4…連結部、6…カバーケース、7
…発光素子、8…受光素子、M…溝。
FIG. 1 is a perspective view of an apparatus according to an embodiment of the present invention, and FIG.
The figure is a sectional view of an embodiment of the device. 1... Light-emitting element storage section, 2... Light-receiving element storage section, 3
...Slit, 4...Connection part, 6...Cover case, 7
...Light emitting element, 8... Light receiving element, M... Groove.

Claims (1)

【特許請求の範囲】 1 所定間隔をおいて配置された不透明発光素子
収納部および不透明受光素子収納部と、これら収
納部の被検知物に対向する面に夫々形成されたス
リツトと、前記各収納部の下部を連結する連結部
と、前記各収納部に収納される発光素子および受
光素子と、前記各収納部および連結部表面を覆う
カバーケースとを有し、前記カバーケースの、前
記連結部を覆う部分には側面が垂直構造の溝が形
成されていることを特徴とする半導体センサー。 2 前記カバーケースの溝は、前記連結部を覆う
部分の外側表面中央部付近に1つ、内側表面の両
角に夫々1つずつ形成されていることを特徴とす
る特許請求の範囲第1項記載の半導体センサー。 3 前記各収納部および連結部とで略U字形状を
構成し、前記カバーケースもこれに対応した略U
字形状を成していることを特徴とする特許請求の
範囲第1項記載の半導体センサー。 4 前記カバーケースは静電防止樹脂にて形成さ
れるか、または静電防止加工が施されていること
を特徴とする特許請求の範囲第1項記載の半導体
センサー。 5 少なくとも前記カバーケースの溝表面は、粗
面加工されていることを特徴とする特許請求の範
囲第1項記載の半導体センサー。
[Scope of Claims] 1. An opaque light-emitting element housing part and an opaque light-receiving element housing part arranged at a predetermined interval, slits formed in the surfaces of these housing parts facing the object to be detected, and each of the above-mentioned housing parts. a connecting part that connects lower parts of the parts, a light emitting element and a light receiving element housed in each of the storage parts, and a cover case that covers the surfaces of each of the storage parts and the connecting part, the connecting part of the cover case A semiconductor sensor characterized by a groove with a vertical structure formed on the side surface. 2. The cover case is characterized in that one groove is formed near the center of the outer surface of the portion covering the connecting portion, and one groove is formed at each corner of the inner surface. semiconductor sensor. 3. Each of the storage parts and the connecting part form a substantially U-shape, and the cover case also has a corresponding substantially U-shape.
The semiconductor sensor according to claim 1, characterized in that it has a letter shape. 4. The semiconductor sensor according to claim 1, wherein the cover case is made of antistatic resin or has been subjected to antistatic processing. 5. The semiconductor sensor according to claim 1, wherein at least the groove surface of the cover case is roughened.
JP61169815A 1986-07-21 1986-07-21 Semiconductor sensor Granted JPS6327071A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP61169815A JPS6327071A (en) 1986-07-21 1986-07-21 Semiconductor sensor
KR1019870007890A KR900007051B1 (en) 1986-07-21 1987-07-21 Semiconductor sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61169815A JPS6327071A (en) 1986-07-21 1986-07-21 Semiconductor sensor

Publications (2)

Publication Number Publication Date
JPS6327071A JPS6327071A (en) 1988-02-04
JPH0528914B2 true JPH0528914B2 (en) 1993-04-27

Family

ID=15893413

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61169815A Granted JPS6327071A (en) 1986-07-21 1986-07-21 Semiconductor sensor

Country Status (1)

Country Link
JP (1) JPS6327071A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04144175A (en) * 1990-10-04 1992-05-18 Nec Corp Reflection type photosensor and manufacture thereof

Also Published As

Publication number Publication date
JPS6327071A (en) 1988-02-04

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