JPH0530594B2 - - Google Patents
Info
- Publication number
- JPH0530594B2 JPH0530594B2 JP33835789A JP33835789A JPH0530594B2 JP H0530594 B2 JPH0530594 B2 JP H0530594B2 JP 33835789 A JP33835789 A JP 33835789A JP 33835789 A JP33835789 A JP 33835789A JP H0530594 B2 JPH0530594 B2 JP H0530594B2
- Authority
- JP
- Japan
- Prior art keywords
- abrasive
- manufacturing
- polishing
- layer
- tape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005498 polishing Methods 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 239000011230 binding agent Substances 0.000 claims description 9
- 239000003082 abrasive agent Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 3
- 229920000620 organic polymer Polymers 0.000 claims description 2
- 239000000463 material Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Polishing Bodies And Polishing Tools (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Description
〔産業上の利用分野〕
本発明は磁気ヘツドや磁気デイスクの仕上げ研
磨などに適した研磨テープに関する。更に詳しく
は前記研磨テープにおける研磨層表面上に任意の
凹凸パターンを有する研磨テープの製造方法に関
するものである。
〔従来の技術〕
磁気ヘツドの精密仕上げ加工や磁気記録媒体の
表面仕上げ加工には可撓性支持体と研磨材、バイ
ンダー及びその他の配合剤からなる研磨層とから
構成される研磨テープ（例：特公昭53−44714号）
が使用されている。この研磨テープは、研磨材微
粒子（例えばカーボランダム、酸化アルミニウ
ム、酸化クロム、酸化鉄、炭化ケイ素、窒化ケイ
素、ダイヤモンド等−以下砥粒という）と、有機
質バインダー（例えばイソシアネートなどの硬化
剤を使用したポリエステル系樹脂、ポリウレタン
系樹脂、塩化ビニール系樹脂、酢酸ビニール系樹
脂−以下バインダーという）を溶媒に溶解したも
のとを均等に混合した塗液を可撓性支持帯上に均
一に塗布した後に溶媒を蒸発除去し、硬化させて
形成してなるものである。
かかる研磨テープの研磨層表面に備えるべき形
状の一つとして研磨層表面に適当に設ける凹凸が
考えられる。研磨層に凹凸を設けることで、研磨
の際に削り出された削り粉が研磨層表面の当該凹
状部に逃げ込み、削り粉が被研磨材と研磨テープ
の間に挟つて被研磨材表面を傷つけるという事態
が防止されるためである。このため研磨層に削り
粉を溜めるための多数の凹状部を有する研磨テー
プや研磨層表面に微小溝を設けた研磨テープが提
案されている（例えば実開昭55−89564号、特開
昭58−60424号、特開昭62−255069号）。
〔発明が解決しようとする課題〕
削り粉を溜める多数の凹状部又は微小溝を有す
る研磨テープの製造には、印刷による方法のほか
ベナードセル現象（Benard Cells）を利用した
方法が提案されている。（ベナードセル現象につ
いては例えばT.C.Patton、植木憲二監訳“塗料
の流動と顔料分散”（昭和47年）共立出版・東京、
頁346を参照）
然しながら印刷手法を用いた場合には研磨層の
凹部に所謂“シロヌケ”を生じ易く、品質の高度
な研磨仕上げに使用し得る研磨テープとすること
は困難であるといわれている。一方、ベナードセ
ル現象を利用した方法は未乾燥研磨層中に微小区
分に分かれた流れ−対流が起こり、多くの場合正
六角状の細胞構造が研磨層中に生じ、その結果多
数の凹凸部が研磨層に形成されるというものであ
る。そしてこのベナードセル現象には表面張力、
凝集力、粒子粒径、その分布、溶媒蒸発速度、そ
の粘度などの多くの要因がセルの形成に影響す
る。そしてその結果、凹状部−微小溝の大きさ、
幅、深さ並びに形状等−として望ましいものを任
意に構成することは著しく困難で、多くの場合一
定の形状（多くの場合正六角形状）、制限された
凹状部の形状のものしか出来ないことが多い。
本来、凹状部の形状は当該研磨テープの使用目
的（被研磨材の種類、研磨精度etc.）により適宜
変更されることが望ましい。又、ベルナールセル
現象を利用して製造された研磨テープの使用後の
テープを電子顕微鏡により観察すると研磨に有効
に使用されている部分は極めて限られた部分であ
り、僅かに顕微鏡視野面積の数％程度にすぎな
い。更に又、多くの場合その微小溝の深さはベナ
ードセル現象などで得られる深さは必要としな
い。
そこで、本発明の目的は研磨の目的（被研磨
材、研磨精度−粗研磨又は精密研磨）に適した研
磨テープの製造方法を提供することである。
又、本発明の第二の目的は、削り粉の大きさと
量に応じ、削り粉を溜めるのに充分な凹状部を適
切に研磨層上に形成し、研磨テープの使用効率−
単位面積当り実質的に研磨に寄与する部分の比率
−を高めることができる研磨テープの製造方法を
提供することである。
更に又、本発明の第三の目的は、削り出された
削り粉が研磨テープと被研磨面との間に挟み込ま
れて被研磨面の表面を傷つけるということがな
く、優れた研磨特性を有する研磨テープを経済的
に製造する方法を提供しようとするものである。
〔課題を解決するための手段〕
上記目的を達成する本発明の、研磨テープを製
造する一つの方法は、可撓性支持帯上に研磨材を
バインダーとともに塗布し、溶媒を逸散させて、
支持帯上に研磨層を形成させた後に、紫外線をそ
の表面に照射し、エツチング（食刻）して、任意
のパターンを研磨層表面に形成することである。
ここで任意パターンを研磨層上に形成すると
き、所望のパターン（微細な濃淡のある画像）を
有するフオトマスクを介して紫外線を研磨層表面
に照射し、照射光の強度に応じて研磨層表面をエ
ツチングすることが好適である。
又、フオトマスクを使用する代わりに、スポツ
トビーム形状にした紫外線を研磨層表面に直接且
つ断続的に照射することにより任意のパターンを
研磨層に形成してもよい。この場合、紫外線の光
強度を変化（例えばフルエンス又はシヨツト数を
変化）させることによりエツチングの深さを変化
させ微細な任意の凹凸パターンをその表面に形成
することができる。
本発明を実施する上で適用し得る光源は波長が
400nｍ以下のレーザ・パルス光で、望ましくは
約150nｍ〜380nｍの範囲の波長の光を含む光源
を用いることである。又、そのエネルギー密度
（以下フルエンスという）はパルス当り100ｍｊ／
cm2以上、望ましくは300ｍｊ／cm2以上で照射する
ことが好ましい。この場合、低フルエンスを用い
たときには照射パルス数を多くすることで所定の
目的を達することができる。
具体的な光源としてはF2、ArF、KrCl、KrF、
XeCl、N2、XeF、色素レーザなどの紫外線レー
ザや銅蒸気レーザ、YAGレーザなどの高調波変
換器から放射されるレーザなどのほか、短時間に
大容量の光を広い面積に照射できるアルゴンまた
はキセノンを含むパルス放電管から放射される光
がある（以下総括的に紫外線レーザ光という）。
精密なパターンを研磨層上に形成するに際し
て、集積回路プロセスで使用されているフオトマ
スク、ウエーハ露光用アライナーなどの技術、プ
ロセス、設備を利用することにより、ほぼ同じ程
度の精密加工を研磨テープの表面に対して行うこ
とができる。集積回路プロセスで蓄積された技術
を本発明に応用した場合、任意の形状のパターン
を有するフオトマスクを使用すればその任意のパ
ターンを本発明の対象研磨テープの表面上に正確
に転写することができる。一方、光加工を続ける
ことにより対象研磨テープの表面に任意の深さの
加工を行うこともできる。
フオトマスクとしてはアルミニウム、多結晶シ
リコン、クロムなどの金属膜、反射率を低めたク
ロム／酸化クロムマスク、酸化鉄などの金属酸化
物膜のほか基板として一般に合成石英基板が本発
明の目的を達成する上で使用することができる。
一例として、平坦、平滑な合成石英基板に真空蒸
着又はスパツタによつて厚さ500Å〜800Åのクロ
ム膜を堆積する。次にこの膜上に解像力の高いフ
オトレジストを塗布し、レピータ或いはマスター
マスクから密着法により画像を焼付け、最後にエ
ツチングでクロム画像を形成すれば1μｍ以下の
精密微細加工用のフオトマスクを得ることができ
る。
露光方式にはフオトマスクを真空密着又はソフ
トコンタクトして露光する方式のほか非接触投影
露光方式がある。この方式にはレンズを使用する
屈折光学系とミラーを用いる反射光学系があるが
このいずれの方式も本発明の目的を達するのに利
用することができる。
フオトマスクを使用しないで本発明の対象製品
を得るのには光源としてスポツトビーム形状の紫
外線を使用すればよい。このためには光源として
紫外線導波路型エキシマレーザを用いるか又は前
記紫外レーザ光を顕微鏡光学系を使用して集束性
の優れた小さなスポツト形状のビームにしたもの
を使用すればよい。照射を簡単にするためには光
フアイバーでこの光を操作し、使用することもで
きる。このようにすることによりフオトマスクを
使用せずに研磨層に直接パルス光を断続的に照射
することにより任意の微細凹凸パターンを表面に
有した研磨テープを製造することもできる。
照射は不活性ガス中でも真空中でも加圧下で行
うこともできるが大気中で照射することが好まし
い。照射の効率を高めるために光増感剤や紫外部
に吸収能の高い他のポリマーを予めバインダー中
に加えておくことも有効である。ここで使用する
バインダーは、その種類によらず、主として有機
物系の高分子であればよく、熱可塑性樹脂でも熱
硬化性樹脂でも、更にそれらの混合物であつても
良い。
〔効果〕
本発明の方法を実施することにより、被研磨材
に適応する研磨テープを製造することができ、ま
た粗研磨あるいは精密研磨といつた研磨精度に応
じた研磨テープを製造することができる。
更に、本発明の方法を実施することにより、削
り粉の大きさと量に応じて、削り粉を溜めるのに
充分な凹状部が適切に研磨層上に形成される研磨
テープを製造することができ、これにより削り出
された削り粉が研磨テープと被研磨面との間に挟
み込まれて被研磨面の表面を傷つけるとうことが
なく、更に、研磨テープの使用効率（単位面積当
り実質的に研磨に寄与する部分の比率）を高める
ことができる。
〔実施例〕
エツチング加工用光源としてエキシマレーザを
使用し、そのエキシマレーザとしてラムダ・フイ
ジツクス社製EMG201MSC、及びEMG102MSC
を使用した実施例を説明する。
なお、照射に際し、高いフルエンスを使用する
時はパルス数を少なくし、フルエンスを低くして
照射する場合にパルス数を多くした。
高フルエンスを得るために凸レンズを用いて所
定のフルエンスが照射面で得られるように光源と
レンズ、レンズと照射面との距離を各々適切に調
節して実施した。
ここで説明する実施例は本発明を説明するもの
であつて、本発明を何等限定するものではない。
実施例
エキシマレーザによる研磨テープの表面光加工
厚さ50μｍの二軸延伸ポリエチレンテレフタレ
ートフイルム上に平均粒径7μｍのアルミナ80重
量部と硬化剤を添加した飽和熱可塑性ポリエステ
ル（東洋紡社製エステルレジン）20重量部を均一
に混合した塗料を20μｍの最終厚になるように塗
布して硬化させ研磨層を形成した。そして、この
研磨層の表面に、条件をいろいろ変化させた紫外
レーザパルス光を照射し、その表面がエツチング
される条件を求めた。
この実施例において、エキシマレーザのガス媒
体としてXeCl（発振波長308nｍ）、KrF（発振波長
248nｍ）、ArF（発振波長193nｍ）を使用した。
照射条件はいずれの場合も繰返し周波数が１Hz、
パルス幅が20ns（半値全幅）、ビーム断面積は直接
照射の場合で10mm×20mmであつた。
照射加工を行つた研磨テープの表面上のエツチ
ングの状態を走査型電子顕微鏡により観察した。
その結果、表１に示したいろいろな条件で照射さ
れた研磨テープは、研磨材を被覆するバインダー
のみでなく研磨材も一緒に除去され、目的とする
研磨層の表面が光によりエツチングされることが
観察された。
[Industrial Application Field] The present invention relates to a polishing tape suitable for final polishing of magnetic heads and magnetic disks. More specifically, the present invention relates to a method of manufacturing a polishing tape having an arbitrary uneven pattern on the surface of the polishing layer in the polishing tape. [Prior Art] For precision finishing of magnetic heads and surface finishing of magnetic recording media, abrasive tapes (for example: Special Publication No. 53-44714)
is used. This polishing tape uses fine abrasive particles (e.g., carborundum, aluminum oxide, chromium oxide, iron oxide, silicon carbide, silicon nitride, diamond, etc. - hereinafter referred to as abrasive grains) and an organic binder (e.g., hardening agent such as isocyanate). After uniformly coating a flexible support band with a coating solution containing a mixture of polyester resin, polyurethane resin, vinyl chloride resin, and vinyl acetate resin (hereinafter referred to as binder) dissolved in a solvent, the solvent is applied. It is formed by removing by evaporation and curing. One of the shapes that should be provided on the surface of the polishing layer of such a polishing tape is irregularities that are appropriately provided on the surface of the polishing layer. By providing unevenness on the polishing layer, the shavings removed during polishing escape into the concave portions of the surface of the polishing layer, and the shavings get caught between the material to be polished and the polishing tape, damaging the surface of the material to be polished. This is to prevent such a situation. For this reason, abrasive tapes having a large number of concave portions for collecting shavings in the abrasive layer and abrasive tapes having micro grooves on the surface of the abrasive layer have been proposed (for example, Utility Model Application No. 55-89564, JP-A-58 -60424, JP-A-62-255069). [Problems to be Solved by the Invention] In addition to a printing method, a method using the Benard cell phenomenon has been proposed for manufacturing an abrasive tape having a large number of concave portions or microgrooves for collecting shavings. (For the Benard cell phenomenon, see, for example, TC Patton, “Paint Flow and Pigment Dispersion” (1971), supervised translation by Kenji Ueki, Kyoritsu Shuppan, Tokyo,
(See page 346) However, when printing methods are used, so-called "white cracks" tend to occur in the concavities of the polishing layer, and it is said that it is difficult to create an abrasive tape that can be used for high-quality polishing finishes. . On the other hand, in the method using the Benard cell phenomenon, a flow divided into minute sections - convection occurs in the wet polishing layer, and in many cases, a regular hexagonal cell structure is created in the polishing layer, resulting in a large number of uneven parts being polished. It is said that it is formed in layers. This Benard cell phenomenon is caused by surface tension,
Many factors influence cell formation, such as cohesive force, particle size, its distribution, solvent evaporation rate, and its viscosity. As a result, the size of the concave portion-microgroove,
It is extremely difficult to arbitrarily configure the desired width, depth, shape, etc., and in many cases only a certain shape (often a regular hexagonal shape) or a limited concave shape can be created. There are many. Originally, it is desirable that the shape of the concave portion be changed as appropriate depending on the intended use of the polishing tape (type of material to be polished, polishing accuracy, etc.). Furthermore, when a used abrasive tape produced using the Bernard cell phenomenon is observed using an electron microscope, the part that is effectively used for polishing is extremely limited, and is only slightly larger than the area of the microscope's field of view. It is only about %. Furthermore, in many cases, the depth of the microgrooves does not need to be as deep as can be obtained by Benard cell phenomenon or the like. Therefore, an object of the present invention is to provide a method for manufacturing a polishing tape suitable for the purpose of polishing (material to be polished, polishing accuracy - rough polishing or precision polishing). A second object of the present invention is to appropriately form concave portions sufficient for collecting shavings on the polishing layer according to the size and amount of the shavings, thereby increasing the usage efficiency of the polishing tape.
An object of the present invention is to provide a method for manufacturing a polishing tape that can increase the ratio of a portion that substantially contributes to polishing per unit area. Furthermore, a third object of the present invention is to have excellent polishing properties without causing scratches on the surface of the polished surface due to the scraped powder being caught between the polishing tape and the surface to be polished. It is an object of the present invention to provide a method for economically manufacturing abrasive tape. [Means for Solving the Problems] One method of manufacturing an abrasive tape of the present invention that achieves the above object is to apply an abrasive material together with a binder onto a flexible supporting band, to allow the solvent to evaporate,
After forming an abrasive layer on the supporting band, the surface of the abrasive layer is irradiated with ultraviolet rays and etched to form an arbitrary pattern on the surface of the abrasive layer. When forming an arbitrary pattern on the polishing layer, the surface of the polishing layer is irradiated with ultraviolet rays through a photomask having a desired pattern (an image with fine shading), and the surface of the polishing layer is shaped according to the intensity of the irradiated light. Etching is preferred. Further, instead of using a photomask, an arbitrary pattern may be formed on the polishing layer by directly and intermittently irradiating the surface of the polishing layer with spot beam-shaped ultraviolet rays. In this case, by changing the light intensity of the ultraviolet rays (for example, changing the fluence or the number of shots), the etching depth can be changed to form a fine pattern of irregularities on the surface. The light source that can be applied to carry out the present invention has a wavelength of
A light source containing laser pulsed light of 400 nm or less, preferably with a wavelength in the range of about 150 nm to 380 nm, is used. Also, its energy density (hereinafter referred to as fluence) is 100mj/pulse.
It is preferable to irradiate at an intensity of at least cm 2 , preferably at least 300 mj/cm 2 . In this case, when a low fluence is used, a predetermined objective can be achieved by increasing the number of irradiation pulses. Specific light sources include F 2 , ArF, KrCl, KrF,
In addition to ultraviolet lasers such as XeCl, N 2 , XeF, and dye lasers, and lasers emitted from harmonic converters such as copper vapor lasers and YAG lasers, argon or There is light emitted from a pulse discharge tube containing xenon (hereinafter collectively referred to as ultraviolet laser light). When forming a precise pattern on the polishing layer, we use technologies, processes, and equipment such as photomasks and wafer exposure aligners used in integrated circuit processes to achieve almost the same level of precision on the surface of the polishing tape. This can be done for When the technology accumulated in the integrated circuit process is applied to the present invention, by using a photomask having a pattern of an arbitrary shape, that arbitrary pattern can be accurately transferred onto the surface of the polishing tape targeted by the present invention. . On the other hand, by continuing optical processing, it is also possible to process the surface of the target polishing tape to an arbitrary depth. Photomasks include metal films such as aluminum, polycrystalline silicon, and chromium, chromium/chromium oxide masks with reduced reflectance, metal oxide films such as iron oxide, and synthetic quartz substrates are generally used as substrates to achieve the object of the present invention. Can be used on.
As an example, a chromium film with a thickness of 500 Å to 800 Å is deposited on a flat, smooth synthetic quartz substrate by vacuum evaporation or sputtering. Next, a high-resolution photoresist is applied onto this film, an image is printed using a repeater or a master mask using the contact method, and finally a chrome image is formed by etching to obtain a photomask for precision microfabrication of 1 μm or less. can. Exposure methods include a method in which a photomask is exposed in vacuum or soft contact, and a non-contact projection exposure method. This system includes a refractive optical system that uses lenses and a reflective optical system that uses mirrors, and either of these systems can be used to achieve the object of the present invention. In order to obtain the object product of the present invention without using a photomask, it is sufficient to use ultraviolet light in the form of a spot beam as a light source. For this purpose, an ultraviolet waveguide excimer laser may be used as a light source, or the ultraviolet laser beam may be converted into a small spot-shaped beam with excellent focusing using a microscope optical system. To simplify illumination, this light can also be manipulated and used with optical fibers. By doing so, it is also possible to manufacture a polishing tape having an arbitrary pattern of fine irregularities on the surface by directly and intermittently irradiating the polishing layer with pulsed light without using a photomask. The irradiation can be carried out in an inert gas, in a vacuum, or under pressure, but it is preferable to carry out the irradiation in the atmosphere. In order to increase the efficiency of irradiation, it is also effective to add a photosensitizer or other polymers with high absorption ability in the ultraviolet region to the binder in advance. The binder used here may be mainly an organic polymer regardless of its type, and may be a thermoplastic resin, a thermosetting resin, or a mixture thereof. [Effect] By carrying out the method of the present invention, it is possible to manufacture a polishing tape that is suitable for the material to be polished, and it is also possible to manufacture a polishing tape that is suitable for polishing accuracy such as rough polishing or precision polishing. . Furthermore, by carrying out the method of the present invention, it is possible to manufacture an abrasive tape in which concave portions sufficient to collect shavings are appropriately formed on the abrasive layer depending on the size and amount of shavings. This prevents the scraped powder from being caught between the polishing tape and the surface to be polished and damaging the surface of the surface to be polished. (the proportion of the portion that contributes to this) can be increased. [Example] An excimer laser was used as a light source for etching processing, and EMG201MSC and EMG102MSC manufactured by Lambda Physics were used as the excimer laser.
An example using the following will be described. In addition, during irradiation, the number of pulses was decreased when using a high fluence, and the number of pulses was increased when irradiating at a low fluence. In order to obtain a high fluence, a convex lens was used, and the distances between the light source and the lens and between the lens and the irradiation surface were appropriately adjusted so that a predetermined fluence was obtained on the irradiation surface. The examples described herein are intended to illustrate the invention, but are not intended to limit the invention in any way. Example Surface photo-processing of polishing tape using excimer laser 20 parts by weight of saturated thermoplastic polyester (ester resin manufactured by Toyobo Co., Ltd.) containing 80 parts by weight of alumina with an average particle size of 7 μm and a hardening agent on a biaxially stretched polyethylene terephthalate film with a thickness of 50 μm A uniformly mixed coating material was applied to a final thickness of 20 μm and cured to form a polishing layer. The surface of this polishing layer was then irradiated with ultraviolet laser pulse light under various conditions to determine the conditions under which the surface would be etched. In this example, the gas medium of the excimer laser is XeCl (oscillation wavelength: 308 nm), KrF (oscillation wavelength:
248 nm) and ArF (oscillation wavelength 193 nm) were used.
In both cases, the irradiation conditions were a repetition frequency of 1Hz,
The pulse width was 20 ns (full width at half maximum), and the beam cross section was 10 mm x 20 mm in the case of direct irradiation. The state of etching on the surface of the polishing tape subjected to irradiation processing was observed using a scanning electron microscope.
As a result, when the abrasive tape was irradiated under various conditions shown in Table 1, not only the binder covering the abrasive material but also the abrasive material was removed, and the surface of the intended abrasive layer was etched by the light. was observed.
【表】
更に観察した結果、上表に示した条件範囲内が
目的とする光加工を行う上で好ましい照射条件で
あることが判つた。即ち、これ以上のパルス数で
は研磨材を被覆するバインダーを除去する条件と
しては適切であるが本目的のためには好ましくな
く、所望の研磨層の光加工には適さない。又、こ
れ以上のパルス数では実験に供した研磨テープ
（研磨層の厚さ；20μｍ）では研磨層がすべてエ
ツチングにより逸散し、寧ろ可撓性支持帯として
使用したポリエチレンテレフタレートフイルムの
エツチングが行われるようになることが判つた。
上述の実施例は面照射で行つたものであるが、
スポツトビーム照射の場合でもフルエンス、シヨ
ツト数などの照射条件が集束後の光で同一であれ
ばスポツト的に光が照射された微細部分のみがエ
ツチングされるのは明白である。[Table] As a result of further observation, it was found that the irradiation conditions within the condition range shown in the above table were preferable for performing the intended optical processing. That is, a pulse number higher than this is suitable as a condition for removing the binder covering the abrasive material, but is not preferable for this purpose, and is not suitable for optical processing of the desired abrasive layer. Furthermore, if the number of pulses exceeded this, the entire polishing layer of the polishing tape used in the experiment (with a polishing layer thickness of 20 μm) was etched away, and the polyethylene terephthalate film used as the flexible support band was etched. It was found that the The above example was carried out using surface irradiation, but
Even in the case of spot beam irradiation, if the irradiation conditions such as fluence and number of shots are the same for the focused light, it is obvious that only the minute portions that are spot irradiated with light will be etched.
Claims (1)
に塗布し、前記帯上に研磨層を形成して研磨テー
プを製造する方法において、 研磨層の形成後に波長が約400nｍ以下の紫外
線を照射して研磨層の表面をエツチングし、任意
の形状の微細凹凸パターンを研磨層上に形成せし
めることを特徴とする研磨テープの製造方法。 ２ 請求項１記載の製造方法であつて、 前記紫外線が紫外線レーザ・パルス光である、
ところの方法。 ３ 請求項２記載の製造方法であつて、 前記紫外線レーザ・パルス光が、 (1) 波長が、約150nｍ〜400nｍの範囲で、 (2) フルエンスがパルス当り100ｍｊ／cm2以上で
ある、 ところの方法。 ４ 請求項１記載の製造方法であつて、 前記研磨材が硬度の高い無機質微粉末から成
る、ところの方法。 ５ 請求項１記載の製造方法であつて、 前記バインダーが主として有機物系の高分子か
ら成る、ところの方法。 ６ 請求項１記載の製造方法であつて、 任意形状の微細凹凸パターンを研磨層上に形成
せしめるためにフオトマスクを使用するところの
方法。 ７ 請求項１記載の製造方法であつて、 前記紫外線を集束性に優れた小さなスポツトビ
ーム形状とし、そのビームを操作することにより
研磨層に直接スポツト的且つ断続的に光を照射す
ることにより当該研磨層上に任意の微細パターン
を形成せしめる方法。[Scope of Claims] 1. A method of manufacturing an abrasive tape by applying an abrasive material together with a binder onto a flexible supporting band and forming an abrasive layer on the band, wherein the wavelength after forming the abrasive layer is about 400 nm or less. 1. A method for producing an abrasive tape, which comprises etching the surface of an abrasive layer by irradiating it with ultraviolet rays to form a fine uneven pattern of an arbitrary shape on the abrasive layer. 2. The manufacturing method according to claim 1, wherein the ultraviolet ray is an ultraviolet laser pulsed light.
However, the method. 3. The manufacturing method according to claim 2, wherein the ultraviolet laser pulsed light (1) has a wavelength in the range of approximately 150 nm to 400 nm, and (2) has a fluence of 100 mj/cm 2 or more per pulse. the method of. 4. The manufacturing method according to claim 1, wherein the abrasive material is made of inorganic fine powder with high hardness. 5. The manufacturing method according to claim 1, wherein the binder mainly consists of an organic polymer. 6. The manufacturing method according to claim 1, wherein a photomask is used to form a fine uneven pattern of arbitrary shape on the polishing layer. 7. The manufacturing method according to claim 1, wherein the ultraviolet rays are shaped into a small spot beam with excellent focusability, and the beam is manipulated to directly irradiate the polishing layer with the light in a spotty and intermittent manner. A method for forming arbitrary fine patterns on a polishing layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33835789A JPH03202281A (en) | 1989-12-28 | 1989-12-28 | Method of manufacturing polishing tape having arbitrary fine uneven pattern on its outer surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33835789A JPH03202281A (en) | 1989-12-28 | 1989-12-28 | Method of manufacturing polishing tape having arbitrary fine uneven pattern on its outer surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03202281A JPH03202281A (en) | 1991-09-04 |
| JPH0530594B2 true JPH0530594B2 (en) | 1993-05-10 |
Family
ID=18317392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33835789A Granted JPH03202281A (en) | 1989-12-28 | 1989-12-28 | Method of manufacturing polishing tape having arbitrary fine uneven pattern on its outer surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03202281A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0984846B1 (en) * | 1997-01-13 | 2004-11-24 | Rodel, Inc. | Method of manufacturing a polymeric polishing pad having photolithographically induced surface pattern |
| CN100379522C (en) * | 2000-12-01 | 2008-04-09 | 东洋橡膠工业株式会社 | Polishing pad, manufacturing method thereof, and buffer layer for polishing pad |
| JP2009269147A (en) * | 2008-05-09 | 2009-11-19 | Fujitsu Ltd | Polishing body and method of manufacturing the same |
| KR101121254B1 (en) | 2011-04-05 | 2012-03-22 | 이화다이아몬드공업 주식회사 | Method for manufacturing electrodeposited diamond wire saw using patterning non-conduction materials |
-
1989
- 1989-12-28 JP JP33835789A patent/JPH03202281A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03202281A (en) | 1991-09-04 |
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