JPH0531311B2 - - Google Patents

Description

[Detailed Description of the Invention] [Objective of the Invention] [Field of Industrial Application] The present invention relates to a static induction thyristor (Static
Induction Thyristor, hereinafter abbreviated as SIThy. )
This invention relates to an integrated structure of optically triggerable and optically quenchable thyristors. High power can be orthogonally converted at high speed and with high efficiency using only a simple bias circuit, trigger light pulse, and quench light pulse, and the control circuit and high power section can be completely separated, so it is used in high power conversion equipment, etc. It is something that

[Conventional technology]

Traditionally, triggering thyristors with light has been widely used, such as LASCR, Light Activatect
It is a well-known fact that this technology is implemented under names such as Thyristor and Photothyristor. In conventional optically triggered thyristors, an amplification gate structure in which amplification thyristors are integrated is generally implemented.

On the other hand, the on/off operation of an SI thyristor by light has already been proposed by the inventor of the present application, and the patent
No. 1534149 (Japanese Patent Publication No. 1-3069) "Semiconductor device including electrostatic induction thyristor", Japanese Patent Application No. 59-54937 "Thyristor device capable of optical quenching" and Japanese Patent Application No. 1987-
No. 175734 "Light-triggered/light-quenched electrostatic induction thyristor". Although various circuit formats have been proposed, there are few examples of integrated structures, and there is only one structure in which an SI thyristor is directly triggered by light and the light is quenched by an SI phototransistor for light quenching. -54937 ``Light-quenchable thyristor device''.

FIG. 6 shows an example of the structure of a direct light trigger/light quench SI thyristor proposed in the above-mentioned Japanese Patent Application No. 59-54937 entitled "Light Quenchable Thyristor Device". The second base also has a single gate type SI thyristor with SIT gate structure and is connected to its gate.
It features an integrated structure of SI phototransistors.

[Problem that the invention seeks to solve]

Conventional optical trigger thyristors use an amplifying thyristor as a trigger mechanism, but since the amplifying thyristor has a bipolar base structure, it has low optical sensitivity and requires a high optical output as a triggering light source. Further, conventional optically triggered thyristors are not directly turned off by gates.

In the method proposed in the above-mentioned Japanese Patent Application No. 59-54937 "Optical Quenchable Thyristor Device", in which the SI thyristor is directly triggered by light and the light is quenched by the SIT connected to the gate of the SI thyristor, a typical experiment was conducted. As data, the light intensity of the trigger light source
Under the conditions of 46.3μW and quench light source light intensity of 60.4μW, a turn-on time of 6.2μsec and a turn-off time of 15μsec were obtained with 300V and 2A switching.

The only example of an integrated structure of a light-triggered and light-quenchable SI thyristor proposed is the above-mentioned Japanese Patent Application No. 59-54937 entitled "Light-quenchable thyristor device." of
The structure is simple because the SI thyristor is triggered by light, but in order to shorten the turn-on delay time when directly triggering the SI thyristor by light, a light source with higher power was required. In addition, regarding optical quenching, since a large current flows during turn-off, the quenching SIT, which has a relatively large area, is directly driven by light, so it takes time to charge the large-capacity gate area with light. The disadvantage is that the turn-off time is slow.

[Means for solving problems]

The present invention provides an integrated structure of an SI thyristor that has both a light trigger function and a light quench function, and the following measures are taken to improve the light trigger sensitivity and light quench sensitivity.

(1) In order to improve the optical trigger sensitivity, an amplification gate structure with a high-speed, high-light-sensitivity SI phototransistor or SI photothyristor is used as an optical amplification element.

(2) In order to improve the optical quench sensitivity, we use an optical quench circuit structure in which the quenching element is driven by an amplification gate method.

(3) As elements for light quenching, use not only SI (photo) transistors but also SI (photo) thyristors and the like. Compared to SI (photo)transistors, SI (photo)thyristors have a smaller on-voltage in the large current region, so they are suitable for large-current photo-triggered and photo-quenched SI thyristors.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 shows a first embodiment of the present invention. The main feature of the first embodiment is that the photosensitive element for phototriggering and the photosensitive element for photoquenching are composed of static induction phototransistors (hereinafter referred to as SIPT).

In FIG. 1, the main SIThy. is composed of a p ⁺ anode region 101, an n ^- low impurity density region 102, an n ⁺ cathode region 103, a p ⁺ gate region 104, an n ⁺ gate region 160, and a p ⁺ An anode electrode 105 and a cathode electrode 106 are provided on the exposed surface portions of the anode region 101 and the n ⁺ cathode region 103, respectively. The n ⁺ gate region 160 is for improving the current amplification factor of the main SIThy. There is also a structure without the n ⁺ gate region 160. SIPT, a photosensitive element for optical trigger,
p ⁺ source region 107 and p ^- low impurity density region 10
8 and p ⁺ drain region 109 and n ⁺ gate region 11
It consists of 0. Here, the p ⁺ gate region 104 of the main SIThy. and the p ⁺ drain region of the optical trigger SIPT are electrically shared. Also, p ⁺
Transparent electrodes that transmit light are provided on exposed surface portions of the source region 107 and the n ⁺ gate region 110. SIPT, a photosensitive element for light quenching,
p ⁺ drain region 113 and p ^- channel region 11
4 and p ⁺ source region 115 and n ⁺ gate region 116
It is made up of. Here, the p ⁺ gate region 104 of the main SIThy. and the p ⁺ source region 115 of the optical quenching SIPT are electrically shared. Also,
A transparent electrode that transmits light is provided on the exposed surface portions of the p ⁺ drain region 113 and the n ⁺ gate region 116.

The area between the gate and cathode of the main SIThy. and the channel area of the SIPT are areas 1 etched in a bevel shape to improve breakdown voltage and electrically isolate each element.
20 is formed.

In practice, for example, a p ^{+ gate} region (with an impurity density of 1.5 to 2× ^{10 19} cm ^-3 , a thickness of 10 μm, and a ^p In the method of creating a low impurity density region between the gate and cathode of approximately 10 μm by epitaxial growth, the device voltage between the anode and cathode is 2500 V, and the breakdown voltage between the gate and cathode is
180V is obtained.

Further, the insulating film 119 on the surface is generally made of oxide, but may be an insulating film such as a nitride film.

The source electrode 111 of the trigger SIPT is V _St 17
3. The gate electrode 112 is connected to V _Gt 1 via R _Gt 175
74, the drain electrode 117 of the quenching SIPT is biased at V _Dg 176, and the gate electrode 1
18 is biased to V _Gg via R _Gg .
When both the trigger light pulse LT17μ and the quench light pulse LQ180 are cut off, both the light trigger SIPT and the light quench SIPT are off, and the main SIThy. is off. Here, the optical trigger SIPT is turned on by being irradiated with the trigger optical pulse LT179. By this Lord SIThy.
The p ⁺ gate region 104 is supplied with carrier from V _St 173 and charged, and the main SIThy. is turned on. Next, when the optical quenching SIPT is turned on by irradiation with the quenching optical pulse LQ180, the main SIThy.
Holes are extracted from the p ⁺ gate region 104 to V _Dg 176 and the main SIThy. is turned off.

Optical pulse LT179 for optical trigger and optical quenching,
The light wavelength of LT180 is selected so that the light penetration depth is approximately the thickness of the low impurity density region of SIPT.

As described above, by using the first embodiment, high-speed and highly efficient orthogonal transformation can be realized with a simple bias circuit and optical pulses.

FIG. 2 shows a second embodiment of the invention. The main feature of the second embodiment is that the photosensitive element for the phototrigger is
The photosensitive element for light quenching is composed of SIPThy.
It is composed of SIPT. Lord SIP Thy.
and the optical quenching SIPT have the same structure as in the first embodiment. The ^optical trigger ^SIPThy .
8 and n ⁺ cathode region 207 and p ⁺ gate region 20
9 and an n ⁺ gate region 260,
An anode electrode 205' and a gate electrode 211 are provided on the surface exposed portions of the p ⁺ anode region 201' and the p ⁺ gate region, respectively, and a transparent electrode is provided on the surface exposed portion of the n ⁺ cathode region 207. ing. Also, the main SIThy. and the trigger SIPthy.
p ⁺ anode regions 201, 201′, p ⁺ gate regions 204, 209, n ⁺ gate region 26
Comrades 0 are electrically common. Furthermore, the cathode electrode 210 and gate electrode 211 of the optical trigger SIP Thy. are also electrically shared.

When the trigger light pulse LT277 and the quench light pulse LQ278 are both cut off, the light trigger SIP Thy. and the light quench SIPT are off, and the main SIThy. is off. Here, the light trigger SIP Thy. is turned on by being irradiated with the trigger light pulse LT277. As a result, the p ⁺ gate region 204 of the main SIP Thy. is biased by hole injection from the p ⁺ anode region, and the n ⁺ gate region 260 of the main SIT Thy. Mainly because it is biased by electron injection.
SIPThy. turns on. The turn-off process is similar to the first embodiment.

The optical wavelength of the trigger pulse LT277 is such that the generation of electron-hole pairs due to light causes the p ⁺ gate 209 and the n ⁺
It is chosen to occur more in the n ^- impurity density region between gates 260. On the other hand, the optical pulse for quenching
The light wavelength of LQ 278 is selected so that many electron-hole pairs are generated by light in the p ^- low impurity density region 214 of the SIPT for light quenching.

In the second embodiment, the optical trigger SIPThy.
It can be integrated using the same process as SIThy.It has the advantage of simplifying the bias circuit.

FIG. 3 shows a third embodiment of the present invention. The main feature of the third embodiment is that the photosensitive element for the phototrigger is
The optical quenching circuit consists of an SIT and the SIPT that drives the SIT. The main SIThy. and optical trigger SIPT have the same structure as in the first embodiment. SIT for light quenching
is composed of a p ⁺ drain region 313, a p ^- low impurity density region 314, a p ⁺ source region 315, and an n ⁺ gate region 316, and the p ⁺ drain region 3
13 and the exposed surface portion of the n ⁺ gate region 316,
drain electrode 317 and gate electrode 318, respectively.
is provided. In addition, the p ⁺ source region 315 of the SIT for light quenching and the p ⁺ gate region 30 of the main SIThy.
4 are electrically common. The SIPT for driving the SIT for optical quenching is composed of a p ⁺ source region 319, a p ^- low impurity density region 320, and p ⁺ drain regions 321 and 322.
p ⁺ source region 319 and n ⁺ gate region 323 and p ⁺
A source electrode 324, a gate electrode 325, and a drain electrode 326 made of a transparent electrode material are provided on the surface exposed portion of the drain region 322, respectively. For driving SIT for optical quenching
p ⁺ source region 319 of SIPT and SIT for optical quenching
is connected to the n ⁺ gate region 316 by an electrode. In addition, the SIT for light quenching and the SIPT for driving it are located in the region 3 formed of an oxide film.
27. Furthermore, for light quenching
A p ⁺ drain region 322, an n ⁺ gate region 323, and a p ^- low impurity density region 320 of the SIPT for driving the SIT are also separated. The main SIThy. and optical trigger SIPT bias circuits are the same as in the first embodiment. The drain of SIT for light quenching is
Biased to a negative voltage V _Dg 379. The p ⁺ drain regions 321, 322 of the SIPT for driving the SIT for optical quenching are biased to V _Dg 376, and the n ⁺ gate region 322 is biased to the resistor R _Gg '37
8 to V _Gg '377.
The bias circuit differs somewhat depending on the characteristics of SIT and SIPT.

The process by which the main SIThy. is triggered is the same as in the first embodiment. When the quench light pulse LQ380 is irradiated while the main SIThy. is on,
SIPT is turned on and the n ⁺ gate region 316 of the photoquenching SIT is biased by V _Dg '376';
SIT turns on. As a result, the holes accumulated in the p ⁺ gate region 304 of the main SIThy. are extracted through the light quenching SIT, and the SIThy. is turned off. The third embodiment is a small-area, high-speed, high-sensitivity
Since the SIPT drives a relatively large-area SIT for optical quenching, faster optical quenching can be achieved compared to the first embodiment.

FIG. 4 shows a fourth embodiment of the present invention. The main feature of the fourth embodiment is that the photosensitive element for the optical trigger is
It consists of SIPThy., and the light quenching circuit is
SIPT to turn off SIPThr. and its SIPThy.
It is made up of. The main SIThy. and optical trigger SIPthy. portions have the same structure as in the second embodiment. The SIP Thy for optical quenching is composed of an n ⁺ cathode region 413, an n ^- impurity density region 414, ^a p ⁺ anode region 415, and ^{a p + gate} region 416. A cathode electrode 417 and a gate electrode 418 made of transparent electrode material are provided on the exposed surface portion, respectively. The SIPT for turning off ^the light ^quenching SIPThy ^.
422 and an n ⁺ gate region 423, a p ⁺ source region 419 and a p ⁺ drain region 42
2 and the exposed surface portion of the n ⁺ gate region 423,
A source electrode 424, a drain electrode 426, and a gate electrode 425 are each provided with a transparent electrode material. p ⁺ gate region 4 of SIPThy. for light quenching
16 and for turning off SIPThy for light quenching.
The p ⁺ source regions 419 of the SIPT are connected by electrodes. Further, the SIP Thy for light quenching and the SIPT for turning it off are separated by a region 427 formed of an oxide film. Further, the p ⁺ drain region 422, the n ⁺ gate region 423, and the p ^- low impurity density region 420 of the SIPT for turning off the light quenching SIP Thy. are similarly separated.

The bias circuits of the main SIThy. and optical trigger SIPthy. are the same as in the second embodiment. For light quenching
The n ⁺ cathode region 413 of SIPThy. has a negative voltage
Biased at V _Kg 477. For light quenching
The p ⁺ drain regions 421, 422 of the SIPT for turning off the SIPThy. are biased to a negative voltage V _Dg '474, and the n ⁺ gate region 423 is
Biased to V _Gg '475 via R _Gg '476. The bias circuit will differ slightly depending on the characteristics of SIPThy. and SIPT.

When the trigger light pulse LT479 is irradiated, the light trigger SIPThy. is turned on, and at the same time, the auxiliary trigger light pulse LT'481 is irradiated and the SIPT is turned on, which turns on the light quenching light pulse.
SIPThy. turns on and the main SIThy. turns on. While the main SIThy. is on, apply a quenching optical pulse to the optical quenching SIPthy.
When LQ480 is irradiated, it is used for light quenching.
The SIPThy. is turned on, holes are extracted from the p ⁺ gate region 404 of the main SIThy. through the light quenching SIPThy., and the main SIThy. is turned off. In the process described above, orthogonal transformation using only light is performed. The fourth embodiment uses SIP Thy. as the photosensitive element for photoquenching, and can reduce the on-resistance, so it is suitable for switching large currents.

FIG. 5 shows a fifth embodiment of the present invention. The main feature of the fifth embodiment is that the photosensitive element for the optical trigger is
It consists of SIPThy., and the light quenching circuit is
It consists of SIThy., SIPT for turning on SIThy., and SIPT for turning off SIThy.
Main SIThy. and SIPthy. for optical trigger and for optical quenching.
SIThy. and light quench for turning off SIThy.
The SIPT portion has the same structure as the fourth embodiment.
The fifth embodiment is the same as the fourth embodiment for light quenching.
This structure has a SIPT added to turn on SIThy. For turning on SIThy. for light quenching
SIPT includes a p ⁺ source region 518, a p ^- low impurity density region 519, and p ⁺ drain regions 520 and 521.
The exposed surface portions of ^{the p+ source} region 518, the p ⁺ drain region 521, and the n ⁺ gate region 535 are made of transparent electrode material, respectively, to form a source electrode 522, a drain region 524,
A gate electrode 523 is provided. p ⁺ gate region 515 of SIThy. for light quenching and for light quenching
p ⁺ source area 5 of SIPT to turn on SIThy.
18 are connected by electrodes. Further, the SIPT for turning off the light quench SIThy. is electrically isolated from other parts by a region 533 formed of an oxide film. In addition, SIThy for light quenching.
SIPT p ⁺ drain region 528 to turn off
and n ⁺ gate region 529, p ^- low impurity density region 5
26 is similarly separated.

The main SIThy., the optical trigger SIThy., the optical quenching SIThy., and the SIPT bias circuit for turning off the optical quenching SIThy. are the same as in the fourth embodiment. For turning on SIThy. for light quenching
The p ⁺ drain regions 520, 521 of the SIPT are biased to a positive voltage V _Sg '575 and the n ⁺ gate region 535 is biased to a positive voltage V _Gg '576 via R _G 577.
is biased towards. The bias circuit is
It varies somewhat depending on the characteristics of SIThy., SIPThy., and SIPT.

The process of turning on the main SIThy. is the same as in the fourth embodiment. In the fourth embodiment, the light quenching SIPThy was triggered by direct light in order to turn off the SIThy. in the on state.
In this embodiment, SIThy. for optical quenching is indirectly optically triggered by SIPT.

〔Effect of the invention〕

Of the embodiments of the present invention explained above, FIGS. 1, 2, and 3, which are the most basic parts,
Experimental results of the example shown in the figure will be explained.

In the embodiment shown in FIG. 1, the trigger light intensity
123μW, quench light intensity 1.15mW, 540V, 1A
The switching of the turn-on delay time T _dpo =
320nsec, rise time T _r =225nsec, turn-off delay time T _dpff =1.15μsec, fall time T _f =1.3μsec, and tailing time T _tl =4.7μsec. Turn-on speed is improved by using amplifying SIPT in the optical trigger section.

In addition, in the embodiment shown in FIG. 2, the trigger light intensity
21.4μW, quench light intensity 1.1mW, 500V, 1A
The switching of T _dpo = 560nsec, T _r =
This was achieved with 270nsec, T _dpff = 1.15μsec, and T _f +T _tl = 28μsec.

Furthermore, in the embodiment shown in FIG.
96μW, quench light intensity 96μW, 400V, 1A switching, T _dpo = 330nsec, T _r = 300nee,
This was achieved with T _dpff = 660 nesc and T _f + T _tl = 22 μsec.
A small-area, high-speed, high-light-sensitivity SIT for light quenching.
By driving with SIPT, the turn-off delay time T _dpff could be reduced.

By using the thyristor device according to the present invention, high-speed, high-efficiency orthogonal conversion with high power can be realized using only a simple bias circuit and optical pulses for triggering and quenching. High-power parts and control circuits can be completely separated electrically, and the number of parts can be extremely reduced, dramatically improving reliability and safety.
Furthermore, the thyristor device according to the present invention has high industrial utility value not only as a conversion device for large power, but also in the small and medium power sector.

[Brief explanation of the drawing]

Figure 1 shows a first embodiment of the present invention in which a SIPT is used as a trigger photosensitive element and a structure example in which SIPT is used as a quenching photosensitive element. Figure 2 shows a second embodiment of the present invention in which a SIPT is used as a trigger photosensitive element. A structural example in which SIPThy. is used as a photosensitive element and SIPT is used as a quench photosensitive element. Figure 3 shows a third embodiment of the present invention in which SIPT is used as a trigger photosensitive element.
Structure example using SIT as an optical quench circuit and SIPT to drive the SIT, Part 4
The figure shows a fourth embodiment of the present invention, which uses a SIPThy. as a trigger photosensitive element, a SIPThy. as a light quench circuit, and a SIPT to turn it off. An example of a structure in which a SIPThy. is used as a trigger photosensitive element, and a SIPTy. is used as a light quench circuit, and a SIPT to turn it on and a SIPT to turn it off.
FIG. 6 shows a conventional example of a light trigger/light quench thyristor. 101, 201, 201', 301, 401,
401', 501, 501'... Anode area of main SIThy. or optical trigger SIPThy., 103, 2
03,207,303,403,407,41
3,503,507,512...Main SIThy., SIPThy. for optical trigger, or SI(P) for optical quenching
Thy. cathode region, 104, 110, 116,
160, 204, 209, 216, 260, 30
4,310,316,323,360,404,
409,416,423,460,504,50
9,515,529,535,560...gate region, 107,109,113,115,21
3,215,307,309,313,315,
319, 321, 322, 419, 421, 42
2,518,520,525,527,528...
...SI(P)T source or drain region, 102,
108, 114, 202, 202', 208, 2
14,302,308,314,320,40
2,402,408,414,420,502,
502, 508, 513, 519, 526...Low impurity density region, 105, 106, 111, 11
2,117,118,205,205',206,
210, 211, 217, 218, 305, 30
6,311,312,317,318,324,
325, 326, 405, 405', 406, 4
10,411,417,418,424,42
5,426,505,505',506,510,
511, 516, 517, 522, 523, 52
4,530,531,532...electrode, 119,
219, 327, 328, 427, 428, 53
3,534...Si oxide region, 120,220,
329, 429, 535...bevel etched side, 179, 180, 277, 278, 37
9,380,479,480,481,582,
583, 584...Light source and optical transmission medium.

Claims (1)

[Claims] 1: an anode region 101 of a first conductivity type; and a first low impurity dopant of a second conductivity type that is adjacent to the anode region and forms a first pn junction between the anode region and the anode region; a density region 102, a second conductivity type cathode region 103 adjacent to the first low impurity density region and having a higher impurity density than the first low impurity density region, and the first low impurity density region a second region adjacent to and between the first low impurity density region;
an electrostatic induction thyristor having a first gate region 104 of a first conductivity type forming a pn junction, and a pair of main electrodes 105 and 106 formed on exposed surface portions of the anode region and the cathode region;
a first source region 107 of a first conductivity type; a second low impurity density region 108 adjacent to the first source region; and a first gate region adjacent to the second low impurity density region. a first drain region 109 of a first conductivity type that is common to the second conductivity type, a second gate region 110 of a second conductivity type adjacent to the second low impurity density region, and the first source region. Source electrode 1 formed on the surface exposed portion of the region
11 and a first gate electrode 112 formed on an exposed surface portion of the second gate region, a first electrostatic induction phototransistor formed on the same semiconductor substrate as the electrostatic induction thyristor. a first photosensitive element configured, a second drain region 113 of the first conductivity type, a third low impurity density region 114 adjacent to the second drain region, and the third low impurity density region 114. a second conductivity type of the first conductivity type adjacent to the density region and common to the first gate region;
a source region 115, a third gate region 116 of a second conductivity type adjacent to the third low impurity density region, and a drain electrode 117 formed on an exposed surface portion of the second drain region; Said third
A second electrostatic induction phototransistor is formed on the same semiconductor substrate as the electrostatic induction thyristor. a photosensitive element, a light source and optical transmission medium 179 for irradiating a trigger light pulse to the first photosensitive element;
A photo-trigger/photo-quench electrostatic induction thyristor comprising a light source and an optical transmission medium 180 for irradiating the second photosensitive element with a quenching light pulse. 2 First anode region 201 of first conductivity type
and a first low impurity density region 202 of a second conductivity type adjacent to the first anode region and forming a first pn junction between the first anode region and the first anode region.
and a first cathode region 203 of a second conductivity type adjacent to the first low impurity density region and having a higher impurity density than the first low impurity density region;
a first gate region 204 of a first conductivity type adjacent to the first low impurity density region and forming a second pn junction between the first low impurity density region;
a pair of main electrodes 20 formed on exposed surface portions of the first anode region and the first cathode region;
5,206; a second anode region 201' of a first conductivity type shared with the first anode region; and a second anode region 201' of a first conductivity type shared with the first low impurity density region. a second low impurity density region 202' of a second conductivity type adjacent to the second anode region; a second cathode region 207 of a second conductivity type having an impurity density; and a second cathode region 207 of the first conductivity type that is common to the first gate region and adjacent to the second low impurity density region. a gate region 209, a first anode electrode 205' common to one of the pair of main electrodes formed on an exposed surface portion of the second anode region, and a first anode electrode 205' formed on an exposed surface portion of the second cathode region. a first cathode electrode 210 and a first gate electrode 211 formed on an exposed surface portion of the second gate region and connected to the first cathode electrode;
an electrostatic induction photothyristor formed on the same semiconductor substrate as the electrostatic induction thyristor; a drain region 213 of a first conductivity type; a third low impurity density region 214 adjacent to the drain region; a first conductivity type source region 215 adjacent to the third low impurity density region and shared with the first gate region; and a second conductivity type source region 215 adjacent to the third low impurity density region. 3 gate region 216
, a drain electrode 217 formed on the surface exposed portion of the drain region, and a second gate electrode 2 formed on the surface exposed portion of the third gate region.
18, formed on the same semiconductor substrate as the electrostatic induction thyristor, and a light source and optical transmission medium 277 for irradiating the electrostatic induction photothyristor with a trigger light pulse.
and a light source and optical transmission medium 2 for irradiating the electrostatic induction phototransistor with a quenching optical pulse.
78. A light-triggered/light-quenched electrostatic induction thyristor comprising: 3 an anode region 301 of a first conductivity type, a first low impurity density region 302 of a second conductivity type adjacent to the anode region and forming a first pn junction between the anode region; a second conductivity type cathode region 303 adjacent to the first low impurity density region and having a higher impurity density than the first low impurity density region; A second layer is formed between the low impurity density region of
an electrostatic induction thyristor having a first gate region 304 of a first conductivity type forming a pn junction, and a pair of main electrodes 305 and 306 formed on exposed surface portions of the anode region and the cathode region;
a first source region 307 of a first conductivity type; a second low impurity density region 308 adjacent to the first source region; and a first gate region adjacent to the second low impurity density region. a first drain region 309 of a first conductivity type common to the first conductivity type, a second gate region 310 of a second conductivity type adjacent to the second low impurity density region, and the first source a first source electrode formed on an exposed surface portion of the region, and a first gate electrode 312 formed on an exposed surface portion of the second gate region, the same semiconductor substrate as the electrostatic induction thyristor; a first electrostatic induction phototransistor formed in the first conductivity type; a second drain region 313 of the first conductivity type;
a third low impurity density region 314 adjacent to the drain region; and a second source region of a first conductivity type adjacent to the third low impurity density region and shared with the first gate region. 315, a third gate region 316 of a second conductivity type adjacent to the third low impurity density region, and a first drain electrode 317 formed on an exposed surface portion of the second drain region. A static induction transistor having a second gate electrode 318 formed on an exposed surface portion of the third gate region and formed on the same semiconductor substrate as the static induction thyristor; a third source region 319 and a fourth low impurity density region 32 adjacent to the third source region
0, and third drain regions 321 and 322 of the first conductivity type adjacent to the fourth low impurity density region.
and a second region adjacent to the fourth low impurity density region.
a fourth gate region 323 of a conductivity type;
is formed on the surface exposed portion of the source region of the second
a second source electrode 324 formed in common with the gate electrode; a second drain electrode 326 formed on the exposed surface portion of the third drain region; and a second drain electrode 326 formed on the exposed surface portion of the fourth gate region. A second electrostatic induction phototransistor is formed on the same semiconductor substrate as the electrostatic induction thyristor and has a third gate electrode 325, and a trigger light pulse is applied to the first electrostatic induction phototransistor. a light source and optical transmission medium 379 for irradiating the second
A photo-trigger/photo-quenching electrostatic induction thyristor comprising a light source and an optical transmission medium 380 for irradiating a quenching light pulse to the electrostatic induction phototransistor. 4 First anode region 401 of first conductivity type
and a first low impurity density region 402 of a second conductivity type adjacent to the first anode region and forming a first pn junction between the first anode region and the first anode region.
and a first cathode region 403 of a second conductivity type that is adjacent to the first low impurity density region and has a higher impurity density than the first low impurity density region;
a first gate region 404 of a first conductivity type adjacent to the first low impurity density region and forming a second pn junction between the first low impurity density region;
a pair of main electrodes 40 formed on exposed surface portions of the first anode region and the first cathode region;
5,406, a second anode region 401' of a first conductivity type shared with the first anode region, and a second anode region 401' of a first conductivity type shared with the first low impurity density region; a second low impurity density region 402' of a second conductivity type adjacent to the second anode region; a second cathode region 407 of a second conductivity type having an impurity density; and a second cathode region 407 of the first conductivity type located in a common region with the first gate region and adjacent to the second low impurity density region. gate region 409 and one of the pair of main electrodes 4 formed on the surface exposed portion of the second anode region.
05, a first cathode electrode 410 formed on the surface exposed portion of the second cathode region, and a first cathode electrode 410 formed on the surface exposed portion of the second gate region. a first gate electrode 41 connected to the first cathode electrode;
1 and formed on the same semiconductor substrate as the electrostatic induction thyristor, and a third cathode region 413 of a second conductivity type.
, a third low impurity density region 414 adjacent to the third cathode region, and a first conductivity type adjacent to the third low impurity density region and common to the first gate region. Third anode area 4
15, a third gate region 416 of the first conductivity type adjacent to the third low impurity density region, and a second cathode electrode 417 formed on the exposed surface portion of the third cathode region. a second electrostatic induction photothyristor having a second gate electrode 418 formed on an exposed surface portion of the third gate region and formed on the same semiconductor substrate as the electrostatic induction thyristor; Source region 419 of conductivity type
, a fourth low impurity density region 420 adjacent to the source region, and a first conductivity type drain region 421, 4 adjacent to the fourth low impurity density region.
22, a fourth gate region 423 of a second conductivity type adjacent to the fourth low impurity density region, and a source formed in an exposed surface portion of the source region and shared with the second gate electrode. electrode 424
, a drain electrode 426 formed on the exposed surface portion of the drain region, and a third gate electrode 4 formed on the exposed surface portion of the fourth gate region.
25 and formed on the same semiconductor substrate as the electrostatic induction thyristor, the first electrostatic induction photothyristor, and the electrostatic induction phototransistor are irradiated with a trigger light pulse. light source and optical transmission medium 479,4 for
81, and a light source and optical transmission medium 480 for irradiating the second electrostatic induction photothyristor with a quenching optical pulse. 5 First anode region 501 of first conductivity type
and a first low impurity density region 502 of a second conductivity type adjacent to the first anode region and forming a first pn junction between the first anode region and the first anode region.
and a first cathode region 503 of a second conductivity type that is adjacent to the first low impurity density region and has a higher impurity density than the first low impurity density region;
a first gate region 504 of a first conductivity type adjacent to the first low impurity density region and forming a second pn junction between the first low impurity density region;
a pair of main electrodes 50 formed on exposed surface portions of the first anode region and the first cathode region;
5,506; a second anode region 501' of a first conductivity type shared with the first anode region; and a second anode region 501' of a first conductivity type shared with the first low impurity density region. a second low impurity density region 502' of a second conductivity type adjacent to the second anode region; a second cathode region 507 of a second conductivity type having an impurity density; and a second gate of the first conductivity type common to the first gate region and adjacent to the second low impurity density. Area 5
09, a first anode electrode 505' common to one of the pair of main electrodes 505 formed on the exposed surface portion of the second anode region, and a first anode electrode 505' formed on the exposed surface portion of the second cathode region. a first cathode electrode 510 and a first gate electrode 511 formed on an exposed main surface portion of the second gate region and connected to the first cathode electrode; A static induction photothyristor formed on the same semiconductor substrate, a third cathode region 512 of the second conductivity type, and the third cathode region 512 of the second conductivity type.
a third low impurity density region 513 adjacent to the cursode region; and a third anode region of a first conductivity type adjacent to the third low impurity density region and shared with the first gate region. 514, a third gate region 515 of the first conductivity type adjacent to the third low impurity density region, and a second cathode electrode 516 formed on the exposed surface portion of the third cathode region. a light quenching electrostatic induction thyristor having a second gate electrode 517 formed on the surface exposed portion of the third gate region and formed on the same semiconductor substrate as the electrostatic induction thyristor; a conductive type first source region 525;
a fourth low impurity density region 526 adjacent to the first source region; and a first drain region 5 of the first conductivity type adjacent to the fourth low impurity density region.
27, 528, and a fourth gate region 529 of a second conductivity type adjacent to the fourth low impurity density region.
and a first gate electrode formed in a surface exposed portion of the first source region and shared with the second gate electrode.
a source electrode 530, a first drain electrode 532 formed on the exposed surface portion of the first drain region, and a third gate electrode 531 formed on the exposed surface portion of the fourth gate region. and a first electrostatic induction phototransistor formed on the same semiconductor substrate as the electrostatic induction thyristor, a second source region 518 of the first conductivity type, and a second source region adjacent to the second source region. a fifth low impurity density region 519 and a second drain region 52 of the first conductivity type adjacent to the fifth low impurity density region
0,521 and a fifth gate region 535 of a second conductivity type adjacent to the fifth low impurity density region.
and a second drain electrode 524 formed on the surface exposed portion of the second drain region;
a second source electrode 522 formed in common with the second gate electrode formed on the surface exposed portion of the source region; and a fourth gate electrode 523 formed on the surface exposed portion of the fifth gate region. has
a second electrostatic induction phototransistor formed on the same semiconductor substrate as the electrostatic induction thyristor; and a second electrostatic induction phototransistor for irradiating the electrostatic induction photothyristor and the first electrostatic induction phototransistor with a trigger light pulse. a light source and optical transmission medium 582, 583; a light source and optical transmission medium 5 for irradiating the second electrostatic induction phototransistor with a quenching optical pulse;
84. A light-triggered/light-quenched electrostatic induction thyristor comprising: 6 an anode region 101 of a first conductivity type, a first low impurity density region 102 of a second conductivity type adjacent to the anode region and forming a first pn junction between the anode region; a second conductivity type cathode region 103 adjacent to the first low impurity density region and having a higher impurity density than the first low impurity density region; the second region between the low impurity density region of
a first gate region 104 of a first conductivity type forming a pn junction of the gate region; a second gate region 160 of a second conductivity type formed between the first gate region and the anode region; an electrostatic induction thyristor having a pair of main electrodes 105 and 106 formed on the surface exposed portions of the anode region and the cathode region; a first source region 107 of a first conductivity type;
a second low impurity density region 108 adjacent to the first source region; and a first conductivity type first region adjacent to the second low impurity density region and common to the first gate region. drain region 109 of
and a second region adjacent to the second low impurity density region.
a third gate region 110 of a conductivity type;
a source electrode 111 formed on the surface exposed portion of the source region; and a first gate electrode 112 formed on the surface exposed portion of the third gate region, the same semiconductor substrate as the electrostatic induction thyristor; a first photosensitive element constituted by a first electrostatic induction phototransistor formed in the first conductivity type; a second drain region 113 of the first conductivity type; Low impurity density region 114
a second source region 115 of the first conductivity type adjacent to the third low impurity density region and shared with the first gate region; a fourth gate region 116 of a second conductivity type; a drain electrode 117 formed on an exposed surface portion of the second drain region;
A second gate electrode 118 is formed on the exposed surface of the fourth gate region, and the second gate electrode 118 is formed on the same semiconductor substrate as the electrostatic induction thyristor.
a second photosensitive element composed of an electrostatic induction phototransistor; a light source and optical transmission medium 1 for irradiating a trigger light pulse to the first photosensitive element;
79, and a light source and optical transmission medium 180 for irradiating the second photosensitive element with a quenching light pulse.
A light-triggered/light-quenched electrostatic induction thyristor comprising: 7 First anode region 201 of first conductivity type
and a first low impurity density region 202 of a second conductivity type adjacent to the first anode region and forming a first pn junction between the first anode region and the first anode region.
and a first cathode region 203 of a second conductivity type adjacent to the first low impurity density region and having a higher impurity density than the first low impurity density region;
a first gate region 204 of a first conductivity type adjacent to the first low impurity density region and forming a second pn junction between the first low impurity density region;
A second gate region 260 of a second conductivity type formed between the first gate region and the first anode region, and a surface exposed portion of the first anode region and the first cathode region. an electrostatic induction thyristor having a pair of main electrodes 205 and 206 formed therein; and a second anode region 201' of a first conductivity type that is common to the first anode region.
and a second low impurity density region 202' of a second conductivity type which is common to the first low impurity density region and adjacent to the second anode region, and the second low impurity density region 202'. a second region adjacent to the region having a higher impurity density than the second low impurity density region;
a second cathode region 207 of a conductivity type, and a third cathode region 207 of a first conductivity type, which is common to the first gate region and adjacent to the second low impurity density region.
a gate region 209, a first anode electrode 205' common to one of the pair of main electrodes formed on the surface exposed portion of the second anode region, and a first anode electrode 205' formed on the surface exposed portion of the second cathode region. a first cathode electrode 210 formed, and a first gate electrode 21 formed on an exposed surface portion of the third gate region and connected to the first cathode electrode.
1 and formed on the same semiconductor substrate as the electrostatic induction thyristor;
a first conductivity type drain region 213 and a third low impurity density region 21 adjacent to the drain region
4, a first conductivity type source region 215 adjacent to the third low impurity density region and shared with the first gate region, and a second conductivity type source region 215 adjacent to the third low impurity density region. a fourth gate region 216 of conductivity type, a drain electrode 217 formed on the surface exposed portion of the drain region, and a second gate electrode 218 formed on the surface exposed portion of the fourth gate region. An electrostatic induction phototransistor formed on the same semiconductor substrate as the electrostatic induction thyristor, a light source and optical transmission medium 277 for irradiating the electrostatic induction photothyristor with a trigger light pulse, and the electrostatic induction phototransistor. A photo-trigger/photo-quench electrostatic induction thyristor comprising a light source for irradiating an inductive phototransistor with a quenching light pulse and an optical transmission medium 278. 8 an anode region 301 of a first conductivity type, a first low impurity density region 302 of a second conductivity type adjacent to the anode region and forming a first pn junction between the anode region; a second conductivity type cathode region 303 adjacent to the first low impurity density region and having a higher impurity density than the first low impurity density region; A second layer is formed between the low impurity density region.
a first gate region 304 of a first conductivity type forming a pn junction; a second gate region 360 of a second conductivity type formed between the first gate region and the anode region; an electrostatic induction thyristor having a pair of main electrodes 305 and 306 formed on the surface exposed portions of the anode region and the cathode region; a first source region 307 of a first conductivity type;
a second low impurity density region 308 adjacent to the first source region; and a first conductivity type first region 308 adjacent to the second low impurity density region and common to the first gate region. drain region 309 of
and a second region adjacent to the second low impurity density region.
a third gate region 310 of a conductivity type;
a first source electrode formed on the surface exposed portion of the source region, and a first gate electrode 312 formed on the surface exposed portion of the third gate region, and the same as the electrostatic induction thyristor. A first electrostatic induction phototransistor formed on a semiconductor substrate and a second drain region 313 of a first conductivity type.
, a third low impurity density region 314 adjacent to the second drain region, and a first conductivity type adjacent to the third low impurity density region and common to the first gate region. Second source area 31
5, a fourth gate region 316 of a second conductivity type adjacent to the third low impurity density region, and a first drain electrode 317 formed on an exposed surface portion of the second drain region. A static induction transistor having a second gate electrode 318 formed on the surface exposed portion of the fourth gate region and formed on the same semiconductor substrate as the static induction thyristor; a third source region 319;
a fourth low impurity density region 320 adjacent to the third source region; and a third drain region 3 of the first conductivity type adjacent to the fourth low impurity density region.
21, 322, and a fifth gate region 323 of a second conductivity type adjacent to the fourth low impurity density region.
and a second gate electrode formed in an exposed surface portion of the third source region and shared with the second gate electrode.
a second drain electrode 326 formed on the exposed surface portion of the third drain region, and a third gate electrode 325 formed on the exposed surface portion of the fifth gate region. and a second electrostatic induction phototransistor formed on the same semiconductor substrate as the electrostatic induction thyristor, a light source and an optical transmission medium for irradiating a trigger light pulse to the first electrostatic induction phototransistor. 379
and a light source and an optical transmission medium 380 for irradiating the second electrostatic induction phototransistor with a quenching light pulse. 9 First anode region 401 of first conductivity type
and a first low impurity density region 402 of a second conductivity type adjacent to the first anode region and forming a first pn junction between the first anode region and the first anode region.
and a first cathode region 403 of a second conductivity type that is adjacent to the first low impurity density region and has a higher impurity density than the first low impurity density region;
a first gate region 404 of a first conductivity type adjacent to the first low impurity density region and forming a second pn junction between the first low impurity density region;
A second gate region 460 of the first conductivity type formed between the first gate region and the first anode region, and a surface exposed portion of the first anode region and the first cathode region. an electrostatic induction thyristor having a pair of main electrodes 405 and 406 formed therein; and a second anode region 401' of a first conductivity type that is common to the first anode region.
, a second low impurity density region 402' of a second conductivity type which is common to the first low impurity density region and adjacent to the second anode region, and the second low impurity density region 402'. a second region adjacent to the region having a higher impurity density than the second low impurity density region;
a second cathode region 407 of a conductivity type; a third gate region 409 of a first conductivity type, which is in a common region with the first gate region and adjacent to the second low impurity density region; A first anode electrode 40 that is common to one 405 of the pair of main electrodes formed on the surface exposed portion of the second anode region.
5', a first cathode electrode 410 formed on the exposed surface portion of the second cathode region, and a first cathode electrode 410 formed on the exposed surface portion of the third gate region and connected to the first cathode electrode. A first electrostatic induction photothyristor having a first gate electrode 411 and formed on the same semiconductor substrate as the electrostatic induction thyristor, a third cathode region 413 of a second conductivity type, and a third cathode region 413 of a second conductivity type; a third low impurity density region 414 adjacent to the cathode region of No. 3; and a third anode of a first conductivity type adjacent to the third low impurity density region and shared with the first gate region. region 415 and a fourth gate region 41 of the first conductivity type adjacent to the third low impurity density region.
6, a second cathode region 417 formed on the surface exposed portion of the third cathode region, and a second cathode region 417 formed on the surface exposed portion of the fourth gate region.
a second electrostatic induction photothyristor having a gate electrode 418 formed on the same semiconductor substrate as the electrostatic induction thyristor; a source region 419 of a first conductivity type; 4 low impurity density region 420 and a first conductivity type drain region 4 adjacent to the fourth low impurity density region 4
21, 422, and a fifth gate region 423 of a second conductivity type adjacent to the fourth low impurity density region.
a source electrode 424 formed on the exposed surface portion of the source region and shared with the second gate electrode; a drain electrode 426 formed on the exposed surface portion of the drain region; and the fifth gate region. an electrostatic induction phototransistor having a third gate electrode 425 formed on an exposed surface portion of the electrostatic induction thyristor and formed on the same semiconductor substrate as the electrostatic induction thyristor; a light source and optical transmission medium 47 for irradiating the electrostatic induction phototransistor with a trigger light pulse;
9,481, and a light source and optical transmission medium 480 for irradiating the second electrostatic induction photothyristor with a quenching light pulse. 10 First anode region 501 of first conductivity type
and a first low impurity density region 502 of a second conductivity type adjacent to the first anode region and forming a first pn junction between the first anode region and the first anode region.
and a first cathode region 503 of a second conductivity type that is adjacent to the first low impurity density region and has a higher impurity density than the first low impurity density region;
a first gate region 504 of a first conductivity type adjacent to the first low impurity density region and forming a second pn junction between the first low impurity density region;
A second gate region 560 of the first conductivity type formed between the first gate region and the second anode region, and a surface exposed portion of the first anode region and the first cathode region. an electrostatic induction thyristor having a pair of main electrodes 505 and 506 formed therein; and a second anode region 501' of a first conductivity type that is common to the first anode region.
, a second low impurity density region 502' of a second conductivity type which is common to the first low impurity density region and adjacent to the second anode region, and the second low impurity density region 502'. a second region adjacent to the region having a higher impurity density than the second low impurity density region;
a second cathode region 507 of a conductivity type, a third gate region 509 of a first conductivity type common to the first gate region and adjacent to the second low impurity density; a first anode electrode 505' common to one of the pair of main electrodes 505 formed on the surface exposed portion of the second anode region;
a first cathode electrode 510 formed on the exposed surface portion of the second cathode region; and a first gate formed on the exposed surface portion of the third gate region and connected to the first cathode electrode. Electrode 5
11 and formed on the same semiconductor substrate as the electrostatic induction thyristor, and a third cathode region 512 of a second conductivity type.
a third low impurity density region 513 adjacent to the third cathode region; and a first conductivity type adjacent to the third low impurity density region and common to the first gate region. Third anode area 5
14, a fourth gate region 515 of the first conductivity type adjacent to the third low impurity density region, and a second cathode electrode 516 formed on the exposed surface portion of the third cathode region. a light quenching electrostatic induction thyristor having a second gate electrode 517 formed on the surface exposed portion of the fourth cathode region and formed on the same semiconductor substrate as the electrostatic induction thyristor; a first conductivity type source region 525; a fourth low impurity density region 526 adjacent to the first source region; and a first conductivity type first source region 526 adjacent to the fourth low impurity density region. drain regions 527 and 528, a fifth gate region 529 of a second conductivity type adjacent to the fourth low impurity density region, and the second gate region formed in the exposed surface portion of the first source region. a first source electrode 530 formed in common with the electrode; a first drain electrode 532 formed on the exposed surface portion of the first drain region; and a first drain electrode 532 formed on the exposed surface portion of the fifth gate region. Third gate electrode 53
1 and formed on the same semiconductor substrate as the electrostatic induction thyristor, and a second source region 5 of the first conductivity type.
18, a fifth low impurity density region 519 adjacent to the second source region, second drain regions 520, 521 of the first conductivity type adjacent to the fifth low impurity density region, and a sixth gate region 535 of a second conductivity type adjacent to the fifth low impurity density region; a second drain electrode 524 formed on the exposed surface portion of the second drain region;
a second source electrode 522 formed in the exposed surface portion of the second source region and shared with the second gate electrode; and a fourth source electrode 522 formed in the exposed surface portion of the sixth gate region. Gate electrode 523
a second electrostatic induction phototransistor formed on the same semiconductor substrate as the electrostatic induction thyristor; and a trigger light pulse is applied to the electrostatic induction photothyristor and the first electrostatic induction phototransistor. Light source and optical transmission medium 582, 58 for illumination
3; and a light source and optical transmission medium 584 for irradiating the second electrostatic induction phototransistor with a quenching light pulse.