JPH0532913B2 - - Google Patents
Info
- Publication number
- JPH0532913B2 JPH0532913B2 JP57212291A JP21229182A JPH0532913B2 JP H0532913 B2 JPH0532913 B2 JP H0532913B2 JP 57212291 A JP57212291 A JP 57212291A JP 21229182 A JP21229182 A JP 21229182A JP H0532913 B2 JPH0532913 B2 JP H0532913B2
- Authority
- JP
- Japan
- Prior art keywords
- lens
- optical communication
- light emitting
- emitting diode
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
- Mounting And Adjusting Of Optical Elements (AREA)
- Optical Couplings Of Light Guides (AREA)
- Led Device Packages (AREA)
Description
【発明の詳細な説明】
〔技術分野〕
本発明は、光通信用ダイオードで、特に発光ダ
イオードや受光ダイオードにレンズを集荷したレ
ンズ装荷光通信用ダイオードに関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an optical communication diode, and more particularly to a lens-loaded optical communication diode in which a lens is concentrated on a light emitting diode or a light receiving diode.
図１には、従来から一般的に行われているレン
ズ装荷発光ダイオードの製造方法を示す。発光ダ
イオード１１に熱硬化型又は常温硬化型又は紫外
線硬化型の樹脂１２を適量配し、そこへレンズ１
３を、ピンセツト又は、真空チヤツクの付いたコ
レツト等を用い精密に配した後、加熱又は紫外線
を照射し固定する。この方法によると、発光ダイ
オード１１とレンズ１３の精密な相対な位置合せ
が要求されると共に、樹脂１２が硬化し、レンズ
１３と発光ダイオード１１とが固定されるまでの
間にレンズ１３が動いてしまう等の欠点があつ
た。
FIG. 1 shows a conventional method of manufacturing a lens-loaded light emitting diode. A suitable amount of thermosetting, room temperature curing, or ultraviolet curing resin 12 is placed on the light emitting diode 11, and the lens 1 is placed thereon.
3 is precisely placed using tweezers or a collector with a vacuum chuck, and then heated or irradiated with ultraviolet rays to fix it. According to this method, precise relative alignment of the light emitting diode 11 and the lens 13 is required, and the lens 13 does not move until the resin 12 hardens and the lens 13 and the light emitting diode 11 are fixed. There were some shortcomings such as folding.
なお、図１中発光ダイオードの電極等の細部
は、本発明を述べる上で不要である為省略する。 Note that details such as the electrodes of the light emitting diode in FIG. 1 are omitted because they are unnecessary for describing the present invention.
また、発光ダイオードに凹状の加工を施し、レ
ンズを固定しやすくする試みも成されているが、
発光ダイオードに直接加工を施さねばならず、発
光ダイオードの構造を制限してしまうという欠点
を有していた。 Attempts have also been made to make it easier to fix the lens by applying concave processing to the light emitting diode.
This method has the disadvantage that the light emitting diode must be directly processed, which limits the structure of the light emitting diode.
本発明は、以上の欠点を解消する為に成された
ものである。
The present invention has been made in order to eliminate the above-mentioned drawbacks.
本発明は、発光ダイオードや、受光ダイオード
にレンズを装荷したレンズ装荷光通信用ダイオー
ドの新規でかつ簡便な製造方法を提供するもので
あり、その特徴とするところは、レンズ保持用結
晶に化学的エツチングにより角錐状の複数の貫通
穴を設ける第１の工程と、これらの貫通穴に球レ
ンズを配する第２の工程と、複数の光通信用ダイ
オードが配列されているウエハの各光通信用ダイ
オードに球レンズ接着用樹脂を塗布する第３の工
程と、第２工程後のレンズ保持用結晶に第３工程
後の光通信用ダイオード用ウエハを位置合わせし
て重ね合わせる第４の工程と、球レンズ接着用樹
脂を硬化させて各球レンズを各光通信用ダイオー
ドに固定する第５の工程とを含む製造方法。 The present invention provides a new and simple manufacturing method for light-emitting diodes and lens-loaded optical communication diodes in which a light-receiving diode is loaded with a lens. A first step of forming a plurality of pyramid-shaped through holes by etching, a second step of arranging ball lenses in these through holes, and a step of forming each optical communication device on a wafer in which a plurality of optical communication diodes are arranged. a third step of applying a ball lens adhesive resin to the diode; a fourth step of aligning and superimposing the optical communication diode wafer after the third step on the lens holding crystal after the second step; a fifth step of curing the ball lens adhesive resin to fix each ball lens to each optical communication diode.
を提供するところに有る。It is located in a place that provides.
以下本発明の実施例について詳細に説明する。
本実施例では、レンズ保持用結晶として面方位１
００のシリコンウエハーを、レンズとしてガラス
球レンズを用いたが、他のもの例えば、面方位１
００のゲルマニウムウエハーや、サフアイヤ球レ
ンズ、を用いても良く、本発明を何ら制限するも
のではない。 Examples of the present invention will be described in detail below.
In this example, the crystal for holding the lens has a plane orientation of 1.
00 silicon wafer, a glass ball lens was used as the lens, but other silicon wafers, such as surface orientation 1
00 germanium wafer or a Saphire ball lens may be used, and the present invention is not limited in any way.
レンズを装荷する対象としてGaAs系材料より
成る拡散型発光ダイオード用ウエハーを用いた。
発光ダイオードのサイズは400μ□、厚さは250μ
であつた。すなわち、発光ダイオードは、400μ
間隔でGaAsウエハー上に形成されている。 A diffused light emitting diode wafer made of GaAs-based material was used as the object for loading the lens.
The size of the light emitting diode is 400μ□, and the thickness is 250μ
It was hot. That is, the light emitting diode is 400μ
They are formed on a GaAs wafer at intervals.
図２に発光ダイオード用ウエハーの概略図を示
す。図２のａは上面図、ｂは、Ａ−A′の断面を
示す図であり発光面２２上に球レンズを精度良く
配する事を目的とし、本発明の工程について説明
する事にする。球レンズは直径150μのものを用
いる。 FIG. 2 shows a schematic diagram of a wafer for light emitting diodes. FIG. 2A is a top view, and FIG. 2B is a cross-sectional view taken along the line A-A'.The process of the present invention will be explained with the aim of accurately arranging a ball lens on the light emitting surface 22. A spherical lens with a diameter of 150μ is used.
図３は、角錐貫通穴付きシリコンウエハーの上
面図及び断面図である。直径150μの球レンズを
貫通穴に入れた時、図３におけるシリコンウエハ
ー３１の上面と、球レンズ３２の最上点が±1μ
の精度で一致する様に角錐貫通穴は形成されてい
る。 FIG. 3 is a top view and a cross-sectional view of a silicon wafer with pyramidal through holes. When a ball lens with a diameter of 150μ is inserted into the through hole, the top surface of the silicon wafer 31 in FIG. 3 and the highest point of the ball lens 32 are within ±1μ.
The pyramidal through holes are formed to match with an accuracy of .
ここで、角錐状貫通穴を設けたレンズ保持用シ
リコンウエハーの製造方法を図４に示す。 Here, a method for manufacturing a lens holding silicon wafer provided with pyramidal through holes is shown in FIG.
面方位１００のシリコンウエハー４１の表面及
び裏面にCVD法により適当な厚さのSiO2４２を
形成する。本実施例ではその厚さは3000Åとし
た。 SiO 2 42 having an appropriate thickness is formed on the front and back surfaces of a silicon wafer 41 having a surface orientation of 100 by CVD. In this example, the thickness was 3000 Å.
（図４−１）
次に通常のフオトリソグラフイー法を用い、表
面及び裏面に希望のフオトレジストパターン４３
を形成する。本例では、裏面には特にパターンは
形成せず、全面フオトレジストで覆い、表面にの
みパターンを形成したが、用途によつては、表裏
両面にフオトレジストパターンを形成しても良
い。(Figure 4-1) Next, using a normal photolithography method, a desired photoresist pattern 43 is applied to the front and back surfaces.
form. In this example, no particular pattern was formed on the back surface, the entire surface was covered with photoresist, and a pattern was formed only on the front surface, but depending on the application, photoresist patterns may be formed on both the front and back surfaces.
（図４−２）
次に、HF系のエツチング液でSiO2をエツチン
グした後フオトレジストを取除く。（図４−３）
次に、SiO2（42）をマスクとし、シリコンウエ
ハーを、エチレンジアミン・ピロカテコール水溶
液を用い135℃で化学エツチングを行うと図４−
４に示す様に１１１面が保存されたままエツチン
グが進み、角錐状の貫通穴４４が形成された。な
おエツチング速度は、毎時約50μmで、エツチン
グの横方向の広がり（いわゆるサイドエツチ）は
ほとんど観測されず再現性良く、角錐状の貫通穴
が形成された。(Figure 4-2) Next, after etching the SiO 2 with an HF-based etching solution, the photoresist is removed. (Figure 4-3) Next, using SiO 2 (42) as a mask, the silicon wafer is chemically etched at 135°C using an aqueous solution of ethylenediamine/pyrocatechol.
As shown in FIG. 4, the etching progressed while the 111th surface was preserved, and a pyramid-shaped through hole 44 was formed. The etching speed was approximately 50 μm/hour, and the lateral spread of the etching (so-called side etching) was hardly observed, resulting in the formation of pyramidal through holes with good reproducibility.
最後にSiO2４２を、HF系のエツチング液を用
い取除いて角錐状貫通穴を設けたレンズ保持用結
晶が完成する。（図４−５）
なお、ここではシリコンウエハーのエツチング
液としてエチレンジアミン・ピロカテコール水溶
液を用いたが、ヒドラジン系のエツチング液又
は、水酸化カリウム系のエツチング液を用いても
良い。 Finally, the SiO 2 42 is removed using an HF-based etching solution to complete a lens holding crystal with pyramidal through holes. (FIGS. 4-5) Here, an aqueous ethylenediamine/pyrocatechol solution was used as the silicon wafer etching solution, but a hydrazine-based etching solution or a potassium hydroxide-based etching solution may also be used.
本実施例では、直径150μの球レンズに対して
所定のパターンを用いエツチングは、約３時間行
つた。用いたシリコンウエハーの厚さは、160μ
±10μであつた。 In this example, etching was performed for about 3 hours using a predetermined pattern on a spherical lens having a diameter of 150 μm. The thickness of the silicon wafer used was 160μ
It was ±10μ.
この様にして作製したレンズ保持用結晶を用い
て図５に示す方法で発光ダイオードにレンズを装
荷した。 A lens was loaded onto a light emitting diode by the method shown in FIG. 5 using the lens holding crystal thus produced.
まずレンズ保持用結晶５１に球レンズ５２を配
しておく。（図５−ａ）
一方、発光ダイオード用ウエハー５３のレンズ
を取付ける位置に適量の紫外線硬化性樹脂５４を
滴下しておく。（図５−ｂ）
次に、図５−ｃに示す如く両者を重ね合せる。
この時、レンズ保持用結晶５１の貫通穴及びレン
ズ５２を通してレンズと発光ダイオード用ウエハ
ー５３との位置合せを行つた後裏面（すなわちレ
ンズを通して）より紫外線５５を照射し樹脂を硬
化させる。（図５−ｃ）
その後、レンズ保持用結晶５１を取りはずして
レンズ装荷発光ダイオードができあがる。（図５
−ｄ）
〔産業上の利用可能性〕
以上、述べた様に本発明を用いると、非常に容
易にレンズ装荷光通信用ダイオードを製造する事
が出来、レンズ装荷の歩留り向上、及び量産性の
向上に有効である。 First, a ball lens 52 is placed on a lens holding crystal 51. (FIG. 5-a) On the other hand, an appropriate amount of ultraviolet curing resin 54 is dropped onto the position of the light emitting diode wafer 53 where the lens is to be attached. (FIG. 5-b) Next, as shown in FIG. 5-c, the two are overlapped.
At this time, after the lens and the light emitting diode wafer 53 are aligned through the through hole of the lens holding crystal 51 and the lens 52, ultraviolet rays 55 are irradiated from the back side (that is, through the lens) to harden the resin. (FIG. 5-c) Thereafter, the lens holding crystal 51 is removed to complete a lens-loaded light emitting diode. (Figure 5
-d) [Industrial Applicability] As described above, by using the present invention, lens-loaded optical communication diodes can be manufactured very easily, improving the yield of lens loading and mass production. Effective for improvement.
なお、実施例では、発光ダイオードについて述
べたが発光ダイオードや、フオトトランジスタな
どの他の光素子にも適用出来る事は言うまでもな
い。 In the embodiment, a light emitting diode has been described, but it goes without saying that the present invention can also be applied to other optical elements such as a light emitting diode and a phototransistor.
図１１，２は従来のレンズ装荷光通信用ダイオ
ードの製造方法を示す図。図２ａ，ｂは、発光ダ
イオード用ウエハーを示す図。図３は、レンズ保
持用結晶の概略を示す図。図４１，２，３，４，
５は、レンズ保持用結晶の製造方法を示す図。図
５ａ，ｂ，ｃ，ｄは、本発明の製造方法の一例を
示す図。
１１……発光ダイオード、１２，５４……樹
脂、１３，３２，５２……レンズ、２１……発光
ダイオードの電極、２２……発光ダイオードの発
光部、３１，５１……レンズ保持用結晶、４１…
…シリコンウエハー、４２……SiO2、４３……
フオトレジスト、４４……エツチングされた穴、
５３……発光ダイオード用ウエハー、５５……紫
外線。
11 and 2 are diagrams showing a conventional method of manufacturing a lens-loaded optical communication diode. Figures 2a and 2b are diagrams showing a wafer for light emitting diodes. FIG. 3 is a diagram schematically showing a lens holding crystal. Figure 41, 2, 3, 4,
5 is a diagram showing a method of manufacturing a lens holding crystal. 5a, b, c, and d are diagrams showing an example of the manufacturing method of the present invention. 11... Light emitting diode, 12, 54... Resin, 13, 32, 52... Lens, 21... Electrode of light emitting diode, 22... Light emitting part of light emitting diode, 31, 51... Crystal for holding lens, 41 …
...Silicon wafer, 42...SiO 2 , 43...
Photoresist, 44...etched holes,
53... Wafer for light emitting diode, 55... Ultraviolet light.
Claims (1)
なるレンズ装荷光通信ダイオードの製造方法にお
いて、 レンズ保持用結晶に化学的エツチングにより角
錐状の複数の貫通穴を設ける第１の工程と、 これらの貫通穴に球レンズを配する第２の工程
と、 複数の光通信用ダイオードが配列されているウ
エハの各光通信用ダイオードに球レンズ接着用樹
脂を塗布する第３の工程と、 前記第２工程後のレンズ保持用結晶に前記第３
工程後の光通信用ダイオード用ウエハを位置合わ
せして重ね合わせる第４の工程と、 前記球レンズ接着用樹脂を硬化させて前記各球
レンズを各光通信用ダイオードに固定する第５の
工程と を含むことを特徴とするレンズ装荷光通信用ダイ
オードの製造方法。 ２ レンズ保持用結晶として、シリコン単結晶を
用いることを特徴とする特許請求の範囲第１項に
記載のレンズ装荷光通信用ダイオードの製造方
法。[Scope of Claims] 1. A method for manufacturing a lens-loaded optical communication diode in which a ball lens is fixed to an optical communication diode, comprising the steps of: forming a plurality of pyramid-shaped through holes in a crystal for holding the lens by chemical etching; a second step of placing ball lenses in these through holes; and a third step of applying a ball lens adhesive resin to each optical communication diode of the wafer on which a plurality of optical communication diodes are arranged. and adding the third to the lens holding crystal after the second step.
a fourth step of aligning and stacking the optical communication diode wafers after the process; and a fifth step of curing the ball lens adhesive resin to fix each ball lens to each optical communication diode. A method for manufacturing a lens-loaded optical communication diode, the method comprising: 2. The method for manufacturing a lens-loaded optical communication diode according to claim 1, characterized in that a silicon single crystal is used as the lens-holding crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57212291A JPS59101881A (en) | 1982-12-02 | 1982-12-02 | Manufacture of lens-loaded optical communication diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57212291A JPS59101881A (en) | 1982-12-02 | 1982-12-02 | Manufacture of lens-loaded optical communication diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59101881A JPS59101881A (en) | 1984-06-12 |
| JPH0532913B2 true JPH0532913B2 (en) | 1993-05-18 |
Family
ID=16620156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57212291A Granted JPS59101881A (en) | 1982-12-02 | 1982-12-02 | Manufacture of lens-loaded optical communication diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59101881A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3532821A1 (en) * | 1985-09-13 | 1987-03-26 | Siemens Ag | LIGHT-EMITTING DIODE (LED) WITH SPHERICAL LENS |
| US4875750A (en) * | 1987-02-25 | 1989-10-24 | Siemens Aktiengesellschaft | Optoelectronic coupling element and method for its manufacture |
| US9728685B2 (en) | 2013-02-28 | 2017-08-08 | Nichia Corporation | Light emitting device and lighting device including same |
| JP6291734B2 (en) * | 2013-06-28 | 2018-03-14 | 日亜化学工業株式会社 | Light emitting device |
| DE102017213065B3 (en) | 2017-04-13 | 2018-07-05 | Christian-Albrechts-Universität Zu Kiel | A process for the production of plano-convex lens elements and for the production of a packaged device at the wafer level |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS555676A (en) * | 1978-04-10 | 1980-01-16 | Hon Edward D | Unbornnchild monitor device |
| JPS57168206A (en) * | 1981-04-10 | 1982-10-16 | Fujitsu Ltd | Photosemiconductor device |
| JPS5838105U (en) * | 1981-09-04 | 1983-03-12 | 日立電線株式会社 | optical coupler |
-
1982
- 1982-12-02 JP JP57212291A patent/JPS59101881A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59101881A (en) | 1984-06-12 |
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