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JPH0533315B2 - - Google Patents
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JPH0533315B2 - - Google Patents

Info

Publication number
JPH0533315B2
JPH0533315B2 JP59185862A JP18586284A JPH0533315B2 JP H0533315 B2 JPH0533315 B2 JP H0533315B2 JP 59185862 A JP59185862 A JP 59185862A JP 18586284 A JP18586284 A JP 18586284A JP H0533315 B2 JPH0533315 B2 JP H0533315B2
Authority
JP
Japan
Prior art keywords
etching
etching solution
solution
hydrochloric acid
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59185862A
Other languages
Japanese (ja)
Other versions
JPS6164888A (en
Inventor
Hirohiko Hanyu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59185862A priority Critical patent/JPS6164888A/en
Publication of JPS6164888A publication Critical patent/JPS6164888A/en
Publication of JPH0533315B2 publication Critical patent/JPH0533315B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/46Regeneration of etching compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Weting (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、銅張配線板の回路形成を行う塩化第
二銅溶液を用いたエツチング液管理方法に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an etching solution management method using a cupric chloride solution for forming circuits on a copper-clad wiring board.

従来例の構成とその問題点 従来より、銅張配線板の回路形成において、塩
化第二鉄溶液、アンモニウム溶液、塩化第二銅溶
液等のエツチング液が用いられてきた。その中で
安定かつ等速のエツチングができる塩化第二銅エ
ツチングが増えつつある。しかし、塩化第二銅エ
ツチングは銅を溶解することにより、二価の銅イ
オンが一価となりエツチングを抑制する。そこで
従来は薬物の添加により、一価の銅イオンを二価
の銅イオンに変えることにより、等速エツチング
を実現してきた。しかし、その薬物添加を制御す
るセンサが複雑かつ時定数の小さいものが要求さ
れていた。すなわち、塩酸濃度、塩化第一銅、塩
化第二銅の三種類を制御するセンサである。しか
し、塩化第一銅及び塩化第二銅を安定かつ制御時
定数を小さく制御することが困難であつた。
Structure of conventional example and its problems Conventionally, etching solutions such as ferric chloride solution, ammonium solution, cupric chloride solution, etc. have been used in circuit formation on copper-clad wiring boards. Among these, cupric chloride etching, which allows stable and uniform etching, is increasingly being used. However, cupric chloride etching dissolves copper, so that divalent copper ions become monovalent and suppress etching. Conventionally, isokinetic etching has been achieved by adding drugs to convert monovalent copper ions into divalent copper ions. However, the sensor for controlling drug addition is required to be complex and have a small time constant. That is, it is a sensor that controls three types: hydrochloric acid concentration, cuprous chloride, and cupric chloride. However, it has been difficult to control cuprous chloride and cupric chloride stably and with a small control time constant.

また、薬液による塩化第二銅エツチング液の再
生は、廃液の増大を招き、廃液処理に苦労する結
果となつた。
Furthermore, regeneration of the cupric chloride etching solution using a chemical solution resulted in an increase in the amount of waste solution, making it difficult to dispose of the waste solution.

発明の目的 本発明は上記欠点に鑑み、電気的にエツチング
液を再生を行い、電極電位により、エツチング液
を調整することができる塩化第二銅エツチングの
液管理方法を提供するものである。
OBJECTS OF THE INVENTION In view of the above-mentioned drawbacks, the present invention provides a method for managing a cupric chloride etching solution in which the etching solution is electrically regenerated and the etching solution can be adjusted by adjusting the electrode potential.

発明の構成 上記目的を達成するために本発明のエツチング
液管理方法は陰イオン透過膜で陽極側と陰極側に
二分した再生槽を有し、陰極側に塩酸溶液を所定
濃度になるよう制御し、陽極側のエツチング液を
循環しながら塩酸濃度及び比重を調整しつつ供給
し、電流を電極間に流し、陽極部でエツチング液
中の一価の銅イオンを二価に酸化させ、陰イオン
透過膜で隔てられた陰極側の塩酸溶液より塩素イ
オンを陽極側に移動、エツチング液を再生させ、
陽極とエチツング液との電位差を測定し、この電
気抵抗値の変化に基づき、エツチング槽中におけ
るエツチングを制御することを特徴とし、この方
法によつて塩化第二銅エツチング液を経済的に管
理することができる。
Structure of the Invention In order to achieve the above object, the etching solution management method of the present invention has a regeneration tank divided into an anode side and a cathode side by an anion permeable membrane, and controls a hydrochloric acid solution on the cathode side to a predetermined concentration. , the etching solution on the anode side is circulated and supplied while adjusting the concentration and specific gravity of hydrochloric acid, and a current is passed between the electrodes to oxidize the monovalent copper ions in the etching solution to divalent ones at the anode section, causing anion permeation. The chlorine ions are transferred from the hydrochloric acid solution on the cathode side separated by a membrane to the anode side, regenerating the etching solution,
The method is characterized in that the potential difference between the anode and the etching solution is measured and the etching in the etching bath is controlled based on the change in electrical resistance, and by this method, the cupric chloride etching solution can be managed economically. be able to.

実施例の説明 以下本発明の一実施例について、図面を参照し
ながら説明する。第1図は本発明の一実施例にお
けるエツチング液管理方法の概略を示すものであ
る。第1図において、1はエツチング装置本体、
2はエツチング廃液タンク、3はエツチング液、
4は塩酸タンク、5は塩酸、6は再生槽(電解
槽)、7は陽極、8は陰極、9は隔膜(陰イオン
透過膜)である。第2図は第1図のエツチング廃
液タンク2の詳細を示すものである。第2図にお
いて10は一次廃液貯槽、11は濃度調整槽、1
2は比重調整用水槽、13は濃度調整用塩酸槽で
ある。
DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 schematically shows an etching solution management method in one embodiment of the present invention. In FIG. 1, 1 is the etching device main body;
2 is an etching waste liquid tank, 3 is an etching liquid,
4 is a hydrochloric acid tank, 5 is a hydrochloric acid tank, 6 is a regeneration tank (electrolytic tank), 7 is an anode, 8 is a cathode, and 9 is a diaphragm (anion permeable membrane). FIG. 2 shows details of the etching waste liquid tank 2 shown in FIG. In Fig. 2, 10 is a primary waste liquid storage tank, 11 is a concentration adjustment tank, and 1
2 is a water tank for specific gravity adjustment, and 13 is a hydrochloric acid tank for concentration adjustment.

以上のように構成されたエツチング液管理方法
について以下に説明する。
The etching solution management method configured as above will be explained below.

まず、エツチングに用いられたエツチング液3
を一次廃液貯槽10に移し、その一部を廃液と
し、残りを濃度調整槽11に送り、比重及び塩酸
濃度を調整し、再生槽6に送る。再生槽6に送り
込まれたエツチング液は、定電流を流すことによ
り、1価の銅イオンを2価に変える。それに伴
い、陰極液側から陰イオン交換膜9を経て、陽極
液側に塩素イオンが移動し、エツチング液の再生
を行う。
First, the etching solution 3 used for etching
is transferred to the primary waste liquid storage tank 10, a part of which is used as waste liquid, and the remainder is sent to the concentration adjustment tank 11, where the specific gravity and hydrochloric acid concentration are adjusted, and sent to the regeneration tank 6. The etching solution sent into the regeneration tank 6 converts monovalent copper ions into divalent ones by flowing a constant current. Accordingly, chlorine ions move from the catholyte side to the anolyte side via the anion exchange membrane 9, thereby regenerating the etching solution.

そのとき、陽極と陽極液の電位差が存在する
が、1価の銅イオンが無くなつた時点で陽極と陽
極液との電位差が一定となる。しかし、1価の銅
イオンが無くなると、以後電流を流しつづけると
塩素ガスが発生するため、再生すべきエツチング
液の流量および再生電流容量を調整することによ
りエツチング条件に合う組成とする。例えば、エ
ツチング槽内の容量1m3の塩酸を含む塩化第2銅
溶液に対して、片面銅張積層板の35μm厚の銅は
くをエツチングし、導体パターンをコンベアスピ
ード2m/分で形成する生産ラインでは、液循環
量が20/分、電流2Aで再生した場合、安定し
たエツチング液を供給することができるが、液循
環量10/分では再生はエツチング処理に追随で
きなくなる。なお、陰極液の塩酸濃度は、1〜35
重量パーセントに制御する。
At that time, there is a potential difference between the anode and the anolyte, but the potential difference between the anode and the anolyte becomes constant when monovalent copper ions disappear. However, once the monovalent copper ions are depleted, chlorine gas will be generated if the current continues to flow. Therefore, the flow rate of the etching solution to be regenerated and the regeneration current capacity are adjusted to obtain a composition that meets the etching conditions. For example, a production process in which a 35 μm thick copper foil of a single-sided copper-clad laminate is etched using a cupric chloride solution containing 1 m 3 of hydrochloric acid in an etching tank to form a conductor pattern at a conveyor speed of 2 m/min. If the line is regenerated at a liquid circulation rate of 20/min and a current of 2A, a stable etching solution can be supplied, but if the liquid circulation rate is 10/min, the regeneration will no longer be able to keep up with the etching process. In addition, the hydrochloric acid concentration of the catholyte is 1 to 35
Control by weight percentage.

以上のように、本実施例のエツチング液管理方
法により、陽極と陽極液との間の電位差で1価と
2価の銅イオンを制御でき、塩酸濃度、比重と合
わせて、センサとして用いられる。すなわち、一
定電流を流すことにより、1価の銅イオン量と2
価の銅イオン量の比の電位差は依存することにな
るので、塩酸濃度を一定とした上で比重管理によ
る全銅量を調整し、また電位差管理により1価お
よび2価の銅イオン量を一定に保つことが可能と
なり、1価の銅イオン量は、エツチング阻害要
因、また塩酸濃度および2価の銅イオン量はエツ
チング促進要因であるのでエツチング力を一定に
保つことができる。従来のORP計、光量計とい
つた化学的及び物理的信号を電気信号に変換する
センサに比べ、安定かつ制御時定数の小さいセン
サとなる。また、薬液による再生方式に比べ、塩
素ガスの発生がなくなるため作業環境が改善さ
れ、薬液の使用量が減るため廃液量の減少を可能
にする。
As described above, according to the etching solution management method of this embodiment, monovalent and divalent copper ions can be controlled by the potential difference between the anode and the anolyte, and can be used as a sensor in conjunction with the hydrochloric acid concentration and specific gravity. In other words, by flowing a constant current, the amount of monovalent copper ions and 2
Since the potential difference in the ratio of the amount of valent copper ions depends, the total amount of copper is adjusted by controlling the specific gravity while keeping the hydrochloric acid concentration constant, and the amount of monovalent and divalent copper ions is kept constant by controlling the potential difference. Since the amount of monovalent copper ions is a factor that inhibits etching, and the concentration of hydrochloric acid and the amount of divalent copper ions are factors that promote etching, the etching power can be kept constant. Compared to conventional sensors such as ORP meters and photometers that convert chemical and physical signals into electrical signals, this sensor is more stable and has a smaller control time constant. Additionally, compared to regeneration methods using chemical solutions, the work environment is improved because no chlorine gas is generated, and the amount of chemical solution used is reduced, making it possible to reduce the amount of waste fluid.

発明の効果 以上のように本発明は、電気隔膜透析により、
塩化第二銅エツチング液を再生することにより、
塩素ガスの発生を抑制する。その際、再生槽の前
で塩酸濃度及び比重を調節することにより、陽極
−陽極液間電位が1価の銅イオンと2価の銅イオ
ンの比のみにより表わされ得る。すなわち、陽極
−陽極液間電位が直接エツチング液の再生状況を
示す。そのことにより薬液の使用量及び廃液量の
減少を招き、安定な制御を行い得ることにより品
質の安定・向上を得ることができ、その実用的効
果は大なるものがある。
Effects of the Invention As described above, the present invention enables electrodiaphragm dialysis to
By regenerating the cupric chloride etching solution,
Suppresses the generation of chlorine gas. At this time, by adjusting the hydrochloric acid concentration and specific gravity before the regeneration tank, the anode-anolyte potential can be expressed only by the ratio of monovalent copper ions to divalent copper ions. That is, the potential between the anode and the anolyte directly indicates the regeneration status of the etching solution. This leads to a reduction in the amount of chemical liquid used and the amount of waste liquid, and by being able to perform stable control, quality can be stabilized and improved, which has great practical effects.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例におけるエツチング
液管理方法の概略図、第2図は同エツチング液管
理方法の廃液タンクの概略図である。 1……エツチング装置本体、2……エツチング
廃液タンク、3……エツチング液、4……塩酸タ
ンク、5……塩酸、6……再生槽(電解槽)、7
……陽極、8……陰極、9……隔膜(イオン変換
膜)、10……一次廃液貯槽、11……濃度調整
槽、12……比重調整用水槽、13……濃度調整
用塩酸槽。
FIG. 1 is a schematic diagram of an etching solution management method according to an embodiment of the present invention, and FIG. 2 is a schematic diagram of a waste solution tank in the same etching solution management method. 1... Etching device body, 2... Etching waste liquid tank, 3... Etching liquid, 4... Hydrochloric acid tank, 5... Hydrochloric acid, 6... Regeneration tank (electrolytic tank), 7
. . . Anode, 8 . . . Cathode, 9 . . . Diaphragm (ion conversion membrane), 10 . . . Primary waste liquid storage tank, 11 .

Claims (1)

【特許請求の範囲】[Claims] 1 陰イオン透過膜で陽極側と陰極側に二分した
再生槽を有し、陰極側に塩酸溶液を所定濃度にな
るよう制御し、陰極側のエツチング液を循環しな
がら塩酸濃度及び比重を調整しつつ供給し、電流
を電極間に流し、陽極部でエツチング液中の一価
の銅イオンを二価に酸化させ陰イオン透過膜で隔
てられた陰極側の塩酸溶液より塩素イオンを陽極
側に移動、エツチング液を再生させ、陽極とエツ
チング液との電位差を測定し、この電気抵抗値の
変化に基づきエツチング槽中におけるエツチング
を制御することを特徴とする塩化第二銅エツチン
グ液管理方法。
1 It has a regeneration tank divided into an anode side and a cathode side by an anion permeable membrane, and controls the hydrochloric acid solution on the cathode side to a predetermined concentration, and adjusts the hydrochloric acid concentration and specific gravity while circulating the etching solution on the cathode side. Current is passed between the electrodes, oxidizing the monovalent copper ions in the etching solution to divalent ones at the anode, and moving chlorine ions from the hydrochloric acid solution on the cathode side, which is separated by an anion-permeable membrane, to the anode side. A method for managing a cupric chloride etching solution, which comprises regenerating the etching solution, measuring the potential difference between the anode and the etching solution, and controlling etching in an etching bath based on the change in electrical resistance.
JP59185862A 1984-09-05 1984-09-05 Control method for etching solution Granted JPS6164888A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59185862A JPS6164888A (en) 1984-09-05 1984-09-05 Control method for etching solution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59185862A JPS6164888A (en) 1984-09-05 1984-09-05 Control method for etching solution

Publications (2)

Publication Number Publication Date
JPS6164888A JPS6164888A (en) 1986-04-03
JPH0533315B2 true JPH0533315B2 (en) 1993-05-19

Family

ID=16178180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59185862A Granted JPS6164888A (en) 1984-09-05 1984-09-05 Control method for etching solution

Country Status (1)

Country Link
JP (1) JPS6164888A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2585405B2 (en) * 1988-12-02 1997-02-26 株式会社ザイエンス Wood brick unit

Also Published As

Publication number Publication date
JPS6164888A (en) 1986-04-03

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