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JPH0533541B2 - - Google Patents
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JPH0533541B2 - - Google Patents

Info

Publication number
JPH0533541B2
JPH0533541B2 JP59009760A JP976084A JPH0533541B2 JP H0533541 B2 JPH0533541 B2 JP H0533541B2 JP 59009760 A JP59009760 A JP 59009760A JP 976084 A JP976084 A JP 976084A JP H0533541 B2 JPH0533541 B2 JP H0533541B2
Authority
JP
Japan
Prior art keywords
cell
rows
collection
integrated circuit
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59009760A
Other languages
Japanese (ja)
Other versions
JPS60153144A (en
Inventor
Masami Murakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59009760A priority Critical patent/JPS60153144A/en
Publication of JPS60153144A publication Critical patent/JPS60153144A/en
Publication of JPH0533541B2 publication Critical patent/JPH0533541B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90Masterslice integrated circuits

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、機能ブロツク領域を備えたマスター
スライス型の半導体集積回路の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement of a master slice type semiconductor integrated circuit having a functional block area.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

機能ブロツクを備えたマスタースライス方式の
半導体集積回路は、機能ブロツク、及び複数の素
子により構成させる基本セルの集合であるセル列
を予め半導体基板上に複数個配列形成して、マス
ターチツプとし、これらに金属配線を施して所望
の論理機能を実現するものである。機能ブロツク
を具備した従来一般的なマスタースライス方式の
半導体集積回路では、通常の機能ブロツクを具備
しないマスタースライス方式の集積回路を同様
に、対向するセル列間の間隔はマスターチツプに
より定められたある一定の幅であり、この領域で
各セル間及びセルと機能ブロツク間を金属配線を
用いて配線している。
In a master slice type semiconductor integrated circuit equipped with functional blocks, a plurality of functional blocks and a plurality of cell rows, which are a collection of basic cells composed of a plurality of elements, are arranged in advance on a semiconductor substrate to form a master chip. The desired logic function is realized by applying metal wiring to the logic circuit. In conventional master slice type semiconductor integrated circuits that are equipped with functional blocks, the spacing between opposing cell rows is determined by the master chip, similar to the conventional master slice type integrated circuits that do not have functional blocks. It has a constant width, and in this area, metal wiring is used to connect each cell and between each cell and a functional block.

このような従来の構造ではセル列長の長い部分
の配線領域に比してセル列長の短かい部分の配線
領域に空き領域を生じ易い。これは、1つのセル
列に含まれるセル数とそのセル列と対向するセル
列間の配線領域とは強い相関があり、一般に1セ
ル列内に含まれるセル数の増加に伴ない配線に必
要な領域も増加することによる。従つて従来方式
のようにセル列長が長い部分及び短い部分両方と
も各セル列間の間隔を同じにしたのでセル長が短
い部分の配線領域に空き領域を生じやすいという
問題があつた。
In such a conventional structure, a vacant area is more likely to occur in the wiring area where the cell row length is short than in the wiring area where the cell row length is long. There is a strong correlation between the number of cells included in one cell column and the wiring area between that cell column and the opposing cell column, and this is generally necessary for wiring as the number of cells included in one cell column increases. This is due to an increase in the number of areas. Therefore, since the spacing between each cell column is made the same in both the long and short cell column length sections as in the conventional method, there is a problem in that empty areas tend to occur in the wiring area of the short cell column length sections.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、配線領域の空き領域を少なく
することにより、チツプ利用率を低下させること
なく高集積化をはかり得る機能ブロツクを備えた
マスタースライス方式の半導体集積回路を提供す
ることにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a master slice type semiconductor integrated circuit having functional blocks that can be highly integrated without reducing the chip utilization rate by reducing the amount of free space in the wiring area.

〔発明の概要〕[Summary of the invention]

本発明の骨子は、セル列長の長い部分に比べて
セル列長が短かい部分の対向するセル列間の間隔
を狭くすることにある。
The gist of the present invention is to narrow the interval between opposing cell rows in a portion where the cell row length is short compared to a portion where the cell row length is long.

一般に、1つのセル列に含まれるセル数と、そ
のセル列と対向するセル列との間の、配線に必要
な、セル列と並行方向の配線数、すなわちトラツ
ク数には深い関係があることが知られている。さ
らに、本発明者等は、1つのセル列に含まれるセ
ル数が倍増すると、そのセル列と対向するセル列
との間のトラツク数は1.3〜1.4倍に増加する傾向
にあることを見出した。この点に着目して本発明
者等が鋭意研究を重ねた結果、機能ブロツクを備
えたマスタースライス方式の半導体集積回路では
セル列の短い部分の対向するセル列間の間隔に無
駄なスペースが存在することが判明した。したが
つて、この無駄なスペースをなくせば、チツプ利
用効率を増大させ、より高集積化が達成されると
考えられる。
In general, there is a close relationship between the number of cells included in one cell row and the number of wires parallel to the cell row, that is, the number of tracks required for wiring between that cell row and the opposing cell row. It has been known. Furthermore, the present inventors found that when the number of cells included in one cell column doubles, the number of tracks between that cell column and the opposing cell column tends to increase by 1.3 to 1.4 times. . Focusing on this point, the inventors have conducted intensive research and found that in master slice type semiconductor integrated circuits equipped with functional blocks, there is wasted space between opposing cell rows in short portions of cell rows. It turned out to be. Therefore, it is thought that if this wasted space is eliminated, chip utilization efficiency will be increased and higher integration will be achieved.

すなわち本発明は、半導体基板上に、予め複数
個の素子からなる基本セルを列状に配列したセル
列の集まりと、これらセル列の集まりとは異なる
形状を待ち所望の機能を実現するブロツク領域と
を構成しておき、金属配線により所望の論理機能
を実現するマスタースライス方式半導体集積回路
において、前記セル列の集まりのセル列長が短か
くなる部分について、他のセル列長が長い部分に
比べて対向するセル列間の間隔を狭くするように
したものである。
That is, the present invention provides a collection of cell rows in which basic cells each consisting of a plurality of elements are arranged in rows in advance on a semiconductor substrate, and a block region that realizes a desired function by waiting for a shape different from the collection of cell rows. In a master slice type semiconductor integrated circuit that realizes a desired logic function using metal interconnections, for a portion where the cell string length of the collection of cell strings is short, the length of the other cell strings is long. In comparison, the spacing between opposing cell rows is narrower.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、他のセル列長の短い部分の対
向するセル列間の間隔を、セル列長の長い部分の
それに比して狭くしているので、配線領域の空き
領域を極力少なくすることができる。このため、
チツプの利用率を向上させ、高集積化をはかるこ
とができる。
According to the present invention, since the spacing between opposing cell rows in the short cell row length portion is narrower than that in the long cell row length portion, the free space in the wiring area is minimized. be able to. For this reason,
It is possible to improve chip utilization and achieve high integration.

〔発明の実施例〕[Embodiments of the invention]

図は本発明の1実施例に係わるマスタースライ
ス方式半導体集積回路の概略構成を示す模式図で
ある。図中11,13はセル列、12,14はチ
ヤネル、15は機能ブロツク、16はそれらを含
めたマスターチツプを示している。ここで、機能
ブロツクとしてはROM,RAM等のメモリ回路
やPLA等が用いられる。セル間の配線は、2層
Al配線を例に取ると、チヤネルに垂直な方向を
第1層Al、長手方向を第2層Alという具合に配
線する。図では、17はセル導出配線である第1
層Al、18がこれを結ぶ第2層Alである。第1
図のセル列11に隣接する第1のチヤネル12は
通常のマスタースライス方式の集積回路で設ける
のと同等のチヤネル幅を待ち、セル列11よりセ
ル列長の短い第2のセル列13に隣接する第2の
チヤネル14はチヤネル12に比べてそのチヤネ
ル幅を狭く形成されている。このチヤネル幅は対
象とするマスターチツプの規模、具備する機能ブ
ロツクの大きさにもよるが、1列に含まれるセル
数に依存するため適宜定める方が好ましい。しか
し、マスターチツプの大きさを決め使用する機能
ブロツクの大きさ(特に幅)に規定を与えれば、
各セル列間の間隔を決めることができる。
FIG. 1 is a schematic diagram showing a schematic configuration of a master slice type semiconductor integrated circuit according to an embodiment of the present invention. In the figure, 11 and 13 are cell columns, 12 and 14 are channels, 15 is a functional block, and 16 is a master chip including these. Here, memory circuits such as ROM and RAM, PLA, etc. are used as the functional blocks. Wiring between cells is 2 layers
Taking Al wiring as an example, wiring is performed such that the direction perpendicular to the channel is the first layer Al, and the longitudinal direction is the second layer Al. In the figure, 17 is the first cell lead-out wiring.
Layer Al, 18 is the second layer Al that connects this. 1st
A first channel 12 adjacent to the cell row 11 in the figure has a channel width equivalent to that provided in a normal master slice type integrated circuit, and is adjacent to a second cell row 13 having a shorter cell row length than the cell row 11. The second channel 14 is formed to have a narrower channel width than the channel 12. The channel width depends on the size of the target master chip and the size of the functional blocks included, but it also depends on the number of cells included in one column, so it is preferable to set it appropriately. However, if you decide the size of the master chip and specify the size (especially the width) of the functional block to be used,
The spacing between each cell column can be determined.

かくして本実施例によれば、セル列長が長い部
分の対向するセル列間の間隔は従来のマスタース
ライス方式の集積回路と同等とし、セル列長が短
い部分の対向するセル列間の間隔は上記セル列間
の間隔より狭くすることによつて、配線領域の空
き領域を少なくすることができる。このため、狭
くした分だけセルを有効に使用でき、チツプの利
用率を向上させ高集積化をはかり得る等の利点が
ある。
Thus, according to this embodiment, the spacing between opposing cell rows in a portion where the cell string length is long is equal to that of a conventional master slice type integrated circuit, and the spacing between opposing cell rows in a portion where the cell string length is short is By making the spacing narrower than the spacing between the cell rows described above, the vacant space in the wiring area can be reduced. Therefore, the cell can be used more effectively by the narrower area, and there are advantages such as improved chip utilization and higher integration.

なお、本発明は上述した実施例に限定されるも
のではない。例えば前記セルの本数やセル列内の
素子数等は、仕様に応じて適宜定めればよい。ま
た、セル列間のチヤネルの幅を決定する手段とし
ては該チヤネルに隣接するセル列内の素子数等に
より定めればよい。その他、本発明の要旨を逸脱
しない範囲で、種々変形して実施することができ
る。
Note that the present invention is not limited to the embodiments described above. For example, the number of cells, the number of elements in a cell row, etc. may be determined as appropriate according to specifications. Further, the width of the channel between cell rows may be determined based on the number of elements in the cell row adjacent to the channel. In addition, various modifications can be made without departing from the gist of the present invention.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明の1実施例に係わるマスタースライ
ス方式半導体集積回路の概略構成を示す模式図で
ある。 11,13…セル列、12,14…チヤネル、
15…機能ブロツク、16…マスターチツプ、1
7…第1層Al配線、18…第2層Al配線。
FIG. 1 is a schematic diagram showing a schematic configuration of a master slice type semiconductor integrated circuit according to an embodiment of the present invention. 11, 13... cell row, 12, 14... channel,
15...Function block, 16...Master chip, 1
7...First layer Al wiring, 18...Second layer Al wiring.

Claims (1)

【特許請求の範囲】[Claims] 1 半導体基板上に、予め複数個の素子からなる
基本セルを列状にしたセル列の集まりと、これら
セル列の集まりとは異なる形状を持ち所望の機能
を実現するブロツク領域とを構成しておき、金属
配線により所望の論理機能を実現するマスタース
ライス方式半導体集積回路において、前記セル列
の集まりのセル列長が短かくなる部分について、
他のセル列長が長い部分に比べて対向するセル列
間の間隔を狭くしてなることを特徴とする半導体
集積回路。
1. On a semiconductor substrate, a collection of cell rows in which basic cells each consisting of a plurality of elements are arranged in rows, and a block region having a shape different from the collection of cell rows and realizing a desired function are configured. Regarding the portion where the cell string length of the collection of cell strings is shortened in a master slice type semiconductor integrated circuit that realizes a desired logic function by metal wiring,
A semiconductor integrated circuit characterized in that the spacing between opposing cell rows is narrower than in other parts where the cell rows are long.
JP59009760A 1984-01-23 1984-01-23 Semiconductor ic Granted JPS60153144A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59009760A JPS60153144A (en) 1984-01-23 1984-01-23 Semiconductor ic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59009760A JPS60153144A (en) 1984-01-23 1984-01-23 Semiconductor ic

Publications (2)

Publication Number Publication Date
JPS60153144A JPS60153144A (en) 1985-08-12
JPH0533541B2 true JPH0533541B2 (en) 1993-05-19

Family

ID=11729230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59009760A Granted JPS60153144A (en) 1984-01-23 1984-01-23 Semiconductor ic

Country Status (1)

Country Link
JP (1) JPS60153144A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10305349B2 (en) 2013-12-05 2019-05-28 Continental Automotive Gmbh Actuator with latching connection

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63114418A (en) * 1986-10-31 1988-05-19 Hitachi Ltd Semiconductor integrated circuit device
JPS63249350A (en) * 1987-04-03 1988-10-17 Nec Corp Gate array semiconductor device
DE10209073A1 (en) * 2002-02-28 2003-09-18 Infineon Technologies Ag Semiconductor chip, and method and device for producing the semiconductor chip
US6870206B2 (en) 2001-11-27 2005-03-22 Infineon Technologies Ag Semiconductor chip, fabrication method, and device for fabricating a semiconductor chip

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10305349B2 (en) 2013-12-05 2019-05-28 Continental Automotive Gmbh Actuator with latching connection

Also Published As

Publication number Publication date
JPS60153144A (en) 1985-08-12

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