JPH0533822B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a semiconductor device, and is particularly used for a bipolar transistor or a MOS transistor formed in a pellet for a single element.

(Prior Art) Conventionally, in such a semiconductor device, on a semiconductor element pellet, a base electrode and a base bonding region, and an emitter electrode and an emitter bonding region are point symmetrical about an imaginary center line on the semiconductor element pellet. And the electrode shapes were similar.
FIG. 5 is a device plan view showing this. In the figure, 1 is a semiconductor device pellet. On the semiconductor device pellet 1, a base electrode 2 and a base bonding region 3 are placed symmetrically with respect to virtual center lines A and B. Emitter electrodes 4 and emitter bonding regions 5, which are located at similar positions and have similar shapes, are wired using metal such as Al.

(Problem to be Solved by the Invention) In a semiconductor device configured in this manner, since the electrode shape is symmetrical, pattern recognition by a bonding machine is difficult, and defects due to insufficient recognition accuracy may occur.
For example, problems such as bonding between the base bonding region 3 on the semiconductor element pellet 1 and the emitter terminal of the envelope sometimes occur.
Therefore, it was not possible to fully automate the bonding process, and the bonding process had to be performed manually, which was inefficient and disadvantageous in terms of cost. In addition, there is insufficient recognition of the above-mentioned pattern by the bonding machine in the bonding area, and it is difficult to say that the shape of the electrode is good enough for the bonding machine to recognize, resulting in misalignment of bonding, which is also disadvantageous in terms of reliability. It was hot. Furthermore, the portion protruding from the bonding region causes an increase in feedback capacitance (for example, capacitance between the collector and the base of a bipolar transistor), resulting in problems such as variations in characteristics.

The present invention improves the pattern recognition accuracy of the bonding machine by introducing recognition patterns of different shapes on the side of each bonding area on the semiconductor element pellet, eliminates bonding defects, and improves reliability by automating bonding. The purpose is to improve the

[Structure of the Invention] (Means and Effects for Solving the Problems) In order to achieve the above object, the semiconductor device of the present invention includes a semiconductor pellet and a position that is point symmetrical with respect to a certain point on the semiconductor pellet. the first and second electrodes arranged at n(n
is a natural number) When the semiconductor pellet is divided into 2n regions by a virtual center line, the first
A first electrode is formed in the first region where the electrode is present.
and a second recognition pattern formed in a second region of the 2n regions where the second electrode is present and having a shape different from the shape of the first recognition pattern.

Further, the first recognition pattern has a planar convex shape,
The second recognition pattern has a concave planar shape. The first electrode is the emitter electrode or source electrode of the transistor, and the second electrode is the base electrode or gate electrode of the transistor.

Furthermore, the first and second regions both include an area of a portion occupied by the first or second electrode and the first or second recognition pattern, and an area occupied by other portions within the region. The ratio with the area is
1: within the range of 0.7 to 1.5.

According to the above configuration, the first recognition pattern is formed in the first region where the first electrode is present, out of 2n regions divided by n virtual center lines, and the first recognition pattern is formed in the first region where the first electrode is present. A second recognition pattern is formed in the second region where the second recognition pattern exists. Moreover, the first
The recognition pattern and the second recognition pattern have different shapes from each other. This allows the first and second
Even in a semiconductor device in which the electrodes are arranged point-symmetrically with respect to a certain point on the semiconductor pellet, the first recognition pattern and the second recognition pattern can be easily distinguished, and bonding Misrecognition will no longer occur.

Further, if the ratio of the area occupied by the first or second electrode and the first or second recognition pattern to the area occupied by the other parts is within the range of 1:0.7 to 1.5, bonding is possible. The pattern recognition accuracy of the machine can be improved, and together with the elimination of erroneous bonding recognition by providing the first and second recognition patterns, high reliability of the semiconductor device can be achieved.

Further, the first recognition pattern has a planar convex shape,
If the second recognition pattern has a planar concave shape, a semiconductor device satisfying the above configuration can be easily provided, and the present invention is effectively applied to bipolar transistors and MOSFETs.

(Example) Hereinafter, an example of the present invention will be described with reference to the drawings. Figures 1 and 2 are pattern plan views of examples of the present invention. Figure 1 is an example in which the electrode symmetry direction is inclined to the side surface of the pellet, and Figure 2 is an example in which the electrode symmetry direction is parallel to the pellet side surface. This is an example of the case. In these figures, 1 is a semiconductor element pellet;
2 is a base electrode formed on the semiconductor element pellet; 3 is a base bonding region; 4 is an emitter electrode located point-symmetrically with base electrode 2 and similar in shape; 5 is point-symmetrically located with base bonding region 3; As in the case of FIG. 5, the emitter bonding regions are located at similar positions and have similar shapes. 6 is the base bonding area 3
7 is a concave base bonding recognition pattern on the side of the emitter bonding area 5, and 7 is a convex emitter bonding recognition pattern on the side of the emitter bonding area 5, and each electrode and bonding area is made of metal such as Al. Wired. Further, the recognition patterns 6 and 7 are preferably formed by patterning a metal such as Al at the same time as forming the electrodes and bonding regions. In addition, poly-Si and
The recognition pattern may be formed using a film such as SiN. A, A', B, and B' are virtual center lines. The size of the recognition pattern is set, for example, as shown in FIG.
The area where the bonding area is when the area is virtually divided into four with the center of the top as an axis (corresponding to FIG. 1), and here the base bonding area of the shaded area 9 will be explained. 8 is an insulating film on the pellet 1, and the shaded area 10 is an emitter bonding area. The area ratio of parts other than Al metal such as
The size of the base bonding recognition pattern 6 is adjusted so that the ratio is 1:1. The same holds true for setting the size of the recognition pattern 7 in the emitter bonding area of the diagonally shaded portion 10.

According to the above embodiment, by making the ratio of the area of metal such as Al in the base bonding area to the area of the area other than Al metal close to 1:1, the pattern recognition accuracy of the bonding machine is improved, and the concave shape By inserting and arranging recognition patterns having different convex shapes near each electrode, it was possible to eliminate erroneous recognition of bonding. This made it possible to automate bonding and reduce costs. Furthermore, by improving the pattern recognition accuracy, that is, by improving the recognition accuracy due to the above-mentioned 1:1 area ratio, and by eliminating recognition errors by being able to recognize different recognition patterns (convex and concave shapes), bonding deviations are eliminated.
This also enables a highly reliable semiconductor device with no variation in characteristics.

Note that the present invention is not limited to the embodiments, and can be applied in various ways. For example, "symmetrical" in the present invention is within the ability of a machine to recognize patterns. FIG. 4 is a plan view of a pattern that is more practical than the previous embodiment, in which the emitter electrodes 4 and 5 are thicker than the base electrodes 2 and 3, and it is difficult to say that they are completely symmetrical. Although this is due to the difference in the amount of current, the electrode pattern in FIG. 4 is often considered to be symmetrical depending on the pattern recognition ability of the machine. Further, in the embodiment, a bipolar transistor is used as an example, but the present invention can also be applied to elements such as field effect transistors. In this case, the collector corresponds to the drain, the emitter corresponds to the source, and the base corresponds to the gate. In addition, in the embodiment, when the pellet surface is divided into four virtual parts with the center on the pellet as the axis,
The ratio of the electrode area including the recognition pattern in a certain area of the bonding region on the surface of the divided pellet to the planar area of the other part is preferably 1:1 in one of the four divided regions. Although the case has been described, a range in which the ratio of both areas is 1:0.7 to 1.5 is a range in which pattern recognition is easy, and such a range may be used. Further, in the embodiment, only the patterns recognized by the bonding machine on the surface of the pellet are illustrated, but it is also possible that there are other patterns on the surface of the pellet that are not recognized by the machine.

[Effects of the Invention] As explained above, the present invention provides a semiconductor device that has advantages such as improving the pattern recognition accuracy of a bonding machine, eliminating bonding defects, and automating bonding to improve reliability. can be provided.

[Brief explanation of drawings]

1 to 4 are pattern plan views of each embodiment of the present invention, and FIG. 5 is a pattern plan view of a conventional device. 1... Semiconductor element pellet, 2... Base electrode, 3
...base bonding area, 4...emitter electrode,
5... Emitsuta bonding area, 6... Recognition pattern for base bonding, 7... Recognition pattern for emitsuta bonding, 8... Insulating film, 9... Base bonding area, 10... Emitsuta bonding area.

Claims (1)

[Scope of Claims] 1. A semiconductor pellet, first and second electrodes arranged at positions that are point symmetrical to one another with respect to a certain point on the semiconductor pellet, and n (where n is When the semiconductor pellet is divided into 2n regions by a virtual center line (natural number),
a first recognition pattern formed in a first region where the first electrode exists; and a first recognition pattern formed in a second region where the second electrode exists among the 2n regions; A semiconductor device comprising a second recognition pattern having a shape different from that of the recognition pattern. 2. The semiconductor device according to claim 1, wherein the first recognition pattern has a convex planar shape, and the second recognition pattern has a concave planar shape. 3. The semiconductor device according to claim 1, wherein the first electrode is an emitter electrode or a source electrode of a transistor, and the second electrode is a base electrode or gate electrode of a transistor. 4. Both the first and second regions are arranged so that the first or second electrode and the first
or the area occupied by the second recognition pattern;
2. The semiconductor device according to claim 1, wherein the ratio of the area to the area occupied by the other portions is within the range of 1:0.7 to 1.5.